HK1196900A1 - Exposure method, substrate stage, exposure apparatus, and device manufacturing method - Google Patents

Exposure method, substrate stage, exposure apparatus, and device manufacturing method

Info

Publication number
HK1196900A1
HK1196900A1 HK14110233.0A HK14110233A HK1196900A1 HK 1196900 A1 HK1196900 A1 HK 1196900A1 HK 14110233 A HK14110233 A HK 14110233A HK 1196900 A1 HK1196900 A1 HK 1196900A1
Authority
HK
Hong Kong
Prior art keywords
exposure
device manufacturing
substrate stage
exposure apparatus
exposure method
Prior art date
Application number
HK14110233.0A
Other languages
English (en)
Chinese (zh)
Inventor
Soichi Owa
Nobutaka Magome
Shigeru Hirukawa
Yoshihiko Kudo
Jiro Inoue
Hirotaka Kohno
Masahiro Nei
Motokatsu Imai
Hiroyuki Nagasaka
Kenichi Shiraishi
Yasufumi Nishii
Hiroaki Takaiwa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1196900A1 publication Critical patent/HK1196900A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
HK14110233.0A 2003-06-13 2014-10-14 Exposure method, substrate stage, exposure apparatus, and device manufacturing method HK1196900A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003169904 2003-06-13
JP2003383887 2003-11-13
JP2004039654 2004-02-17

Publications (1)

Publication Number Publication Date
HK1196900A1 true HK1196900A1 (en) 2014-12-24

Family

ID=33556144

Family Applications (3)

Application Number Title Priority Date Filing Date
HK14110233.0A HK1196900A1 (en) 2003-06-13 2014-10-14 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
HK16102657.2A HK1214680A1 (zh) 2003-06-13 2016-03-08 曝光方法、基片台、曝光設備以及器件製造方法
HK19100965.0A HK1258606A1 (zh) 2003-06-13 2019-01-18 曝光設備以及裝置製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
HK16102657.2A HK1214680A1 (zh) 2003-06-13 2016-03-08 曝光方法、基片台、曝光設備以及器件製造方法
HK19100965.0A HK1258606A1 (zh) 2003-06-13 2019-01-18 曝光設備以及裝置製造方法

Country Status (7)

Country Link
US (9) US7483119B2 (ko)
EP (5) EP2937893B1 (ko)
JP (11) JP4415939B2 (ko)
KR (9) KR101729866B1 (ko)
HK (3) HK1196900A1 (ko)
TW (7) TWI467634B (ko)
WO (1) WO2004112108A1 (ko)

Families Citing this family (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100568101C (zh) 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1611482B1 (en) * 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI467634B (zh) 2003-06-13 2015-01-01 尼康股份有限公司 An exposure method, a substrate stage, an exposure apparatus, and an element manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
WO2005006415A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
KR20180120816A (ko) * 2003-08-21 2018-11-06 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
CN100407371C (zh) 2003-08-29 2008-07-30 株式会社尼康 曝光装置和器件加工方法
WO2005041276A1 (ja) 2003-10-28 2005-05-06 Nikon Corporation 露光装置、露光方法、デバイスの製造方法
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054447B2 (en) 2003-12-03 2011-11-08 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
KR101941351B1 (ko) 2003-12-15 2019-01-22 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602004027162D1 (de) * 2004-01-05 2010-06-24 Nippon Kogaku Kk Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
JP4572539B2 (ja) * 2004-01-19 2010-11-04 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4973754B2 (ja) * 2004-03-04 2012-07-11 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP4622340B2 (ja) * 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
JP2005302880A (ja) * 2004-04-08 2005-10-27 Canon Inc 液浸式露光装置
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101227290B1 (ko) * 2004-06-09 2013-01-29 가부시키가이샤 니콘 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법,디바이스 제조 방법, 그리고 발액 플레이트
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
KR101330922B1 (ko) 2004-06-21 2013-11-18 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101202231B1 (ko) 2004-07-21 2012-11-16 가부시키가이샤 니콘 노광 방법 및 디바이스 제조 방법
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006030910A1 (ja) * 2004-09-17 2006-03-23 Nikon Corporation 露光用基板、露光方法及びデバイス製造方法
SG188899A1 (en) 2004-09-17 2013-04-30 Nikon Corp Substrate holding device, exposure apparatus, and device manufacturing method
KR20070083492A (ko) * 2004-12-02 2007-08-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
EP1837896B1 (en) * 2004-12-15 2015-09-09 Nikon Corporation Substrate holding apparatus, exposure apparatus and device manufacturing method
JP4551758B2 (ja) * 2004-12-27 2010-09-29 株式会社東芝 液浸露光方法および半導体装置の製造方法
JP4488890B2 (ja) * 2004-12-27 2010-06-23 株式会社東芝 レジストパターン形成方法及び半導体装置の製造方法
US7491661B2 (en) 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
SG124359A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW200629008A (en) * 2005-01-18 2006-08-16 Nikon Corp Liquid removing apparatus, exposure apparatus and device manufacturing method
JP2006202825A (ja) * 2005-01-18 2006-08-03 Jsr Corp 液浸型露光装置
JP5040646B2 (ja) * 2005-03-23 2012-10-03 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
EP1876635A4 (en) 2005-04-25 2010-06-30 Nikon Corp EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
JP4752320B2 (ja) * 2005-04-28 2011-08-17 株式会社ニコン 基板保持装置及び露光装置、基板保持方法、露光方法、並びにデバイス製造方法
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP4761055B2 (ja) * 2005-06-10 2011-08-31 信越化学工業株式会社 パターン形成方法
WO2007002833A2 (en) * 2005-06-29 2007-01-04 Blaise Corbett Introduction of an intermediary refractive layer for immersion lithography
JP3997245B2 (ja) * 2005-10-04 2007-10-24 キヤノン株式会社 露光装置及びデバイス製造方法
US8011915B2 (en) * 2005-11-04 2011-09-06 Asml Netherlands B.V. Imprint lithography
US7878791B2 (en) 2005-11-04 2011-02-01 Asml Netherlands B.V. Imprint lithography
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
TWI538014B (zh) * 2005-12-08 2016-06-11 尼康股份有限公司 A substrate holding device, an exposure apparatus, an exposure method, and an element manufacturing method
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7446859B2 (en) * 2006-01-27 2008-11-04 International Business Machines Corporation Apparatus and method for reducing contamination in immersion lithography
US7310132B2 (en) * 2006-03-17 2007-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4889331B2 (ja) * 2006-03-22 2012-03-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
CN100590173C (zh) * 2006-03-24 2010-02-17 北京有色金属研究总院 一种荧光粉及其制造方法和所制成的电光源
US8027019B2 (en) 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2535744A3 (en) 2006-04-03 2013-10-09 Nikon Corporation Incidence surfaces and optical windows that are solvophobic to immersion liquids used in an immersion microlithography system
US7978308B2 (en) * 2006-05-15 2011-07-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20090018024A (ko) * 2006-05-18 2009-02-19 가부시키가이샤 니콘 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법
US20070273856A1 (en) * 2006-05-25 2007-11-29 Nikon Corporation Apparatus and methods for inhibiting immersion liquid from flowing below a substrate
JP2007335476A (ja) * 2006-06-12 2007-12-27 Canon Inc 露光装置及びデバイス製造方法
US20080043211A1 (en) * 2006-08-21 2008-02-21 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008108766A (ja) * 2006-10-23 2008-05-08 Toppan Printing Co Ltd チャックおよびスピンコータ装置
US20080100812A1 (en) * 2006-10-26 2008-05-01 Nikon Corporation Immersion lithography system and method having a wafer chuck made of a porous material
US8208116B2 (en) 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8416383B2 (en) * 2006-12-13 2013-04-09 Asml Netherlands B.V. Lithographic apparatus and method
US20080241489A1 (en) * 2007-03-30 2008-10-02 Renesas Technology Corp. Method of forming resist pattern and semiconductor device manufactured with the same
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7561250B2 (en) * 2007-06-19 2009-07-14 Asml Netherlands B.V. Lithographic apparatus having parts with a coated film adhered thereto
US8705010B2 (en) * 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI450047B (zh) * 2007-07-13 2014-08-21 Mapper Lithography Ip Bv 微影系統、夾緊方法及晶圓台
JP4961299B2 (ja) * 2007-08-08 2012-06-27 キヤノン株式会社 露光装置およびデバイス製造方法
JP4533416B2 (ja) * 2007-09-25 2010-09-01 キヤノン株式会社 露光装置およびデバイス製造方法
JP5369443B2 (ja) * 2008-02-05 2013-12-18 株式会社ニコン ステージ装置、露光装置、露光方法、及びデバイス製造方法
US20090218743A1 (en) * 2008-02-29 2009-09-03 Nikon Corporation Substrate holding apparatus, exposure apparatus, exposing method, device fabricating method, plate member, and wall
JP2009260264A (ja) * 2008-03-24 2009-11-05 Canon Inc 露光装置およびデバイス製造方法
JP5097166B2 (ja) * 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
NL1036924A1 (nl) * 2008-06-02 2009-12-03 Asml Netherlands Bv Substrate table, lithographic apparatus and device manufacturing method.
NL2002983A1 (nl) * 2008-06-26 2009-12-29 Asml Netherlands Bv A lithographic apparatus and a method of operating the lithographic apparatus.
JP2010021370A (ja) * 2008-07-10 2010-01-28 Canon Inc 液浸露光装置およびデバイス製造方法
EP2196857A3 (en) * 2008-12-09 2010-07-21 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
JP5001343B2 (ja) 2008-12-11 2012-08-15 エーエスエムエル ネザーランズ ビー．ブイ． 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法
JP4853530B2 (ja) * 2009-02-27 2012-01-11 株式会社豊田中央研究所 可動部を有するマイクロデバイス
JP5398307B2 (ja) * 2009-03-06 2014-01-29 株式会社東芝 半導体装置の製造方法
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
NL2004807A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Substrate table for a lithographic apparatus, litographic apparatus, method of using a substrate table and device manufacturing method.
US8913230B2 (en) * 2009-07-02 2014-12-16 Canon Nanotechnologies, Inc. Chucking system with recessed support feature
NL2005120A (en) * 2009-09-21 2011-03-22 Asml Netherlands Bv Lithographic apparatus, coverplate and device manufacturing method.
NL2005126A (en) * 2009-09-21 2011-03-22 Asml Netherlands Bv Lithographic apparatus, coverplate and device manufacturing method.
NL2005666A (en) * 2009-12-18 2011-06-21 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
NL2005874A (en) * 2010-01-22 2011-07-25 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
TW201630105A (zh) * 2015-02-12 2016-08-16 漢民科技股份有限公司 晶圓保持器
US8298729B2 (en) * 2010-03-18 2012-10-30 Micron Technology, Inc. Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks
JP5131312B2 (ja) * 2010-04-26 2013-01-30 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US8598538B2 (en) * 2010-09-07 2013-12-03 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
NL2007802A (en) 2010-12-21 2012-06-25 Asml Netherlands Bv A substrate table, a lithographic apparatus and a device manufacturing method.
US9329496B2 (en) * 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
JP5888337B2 (ja) 2011-10-18 2016-03-22 東亞合成株式会社 クロロポリシランの製造方法および流動床反応装置
KR101652782B1 (ko) 2012-02-03 2016-08-31 에이에스엠엘 네델란즈 비.브이. 기판 홀더 및 리소그래피 장치
NL2010817A (en) * 2012-05-29 2013-12-02 Asml Netherlands Bv A support apparatus, a lithographic apparatus and a device manufacturing method.
JP2014045090A (ja) * 2012-08-27 2014-03-13 Toshiba Corp 液浸露光装置
JP6155581B2 (ja) * 2012-09-14 2017-07-05 株式会社ニコン 露光装置、露光方法、デバイス製造方法
US9939736B2 (en) * 2014-01-20 2018-04-10 Asml Netherlands B.V. Substrate holder and support table for lithography
KR102005649B1 (ko) * 2014-12-12 2019-10-01 캐논 가부시끼가이샤 기판 유지 장치, 리소그래피 장치, 및 물품의 제조 방법
CN107430357B (zh) * 2015-03-31 2021-02-05 株式会社尼康 曝光装置、平面显示器的制造方法、元件制造方法、及曝光方法
WO2016198255A1 (en) * 2015-06-11 2016-12-15 Asml Netherlands B.V. Lithographic apparatus and method for loading a substrate
WO2016207122A1 (en) * 2015-06-23 2016-12-29 Asml Netherlands B.V. Support apparatus, lithographic apparatus and device manufacturing method
US10254256B2 (en) 2015-10-01 2019-04-09 Thermo Hypersil-Keystone Llc Method of packing chromatographic columns, packed chromatographic columns for use at high pressures and uses thereof
EP3387491B1 (en) 2015-12-08 2020-01-01 ASML Netherlands B.V. Substrate table, lithographic apparatus and method of operating a lithographic apparatus
US10895808B2 (en) 2015-12-15 2021-01-19 Asml Netherlands B.V. Substrate holder, a lithographic apparatus and method of manufacturing devices
EP3455677A1 (en) * 2016-05-12 2019-03-20 ASML Netherlands B.V. Extraction body for lithographic apparatus
US10185226B2 (en) * 2016-07-14 2019-01-22 Canon Kabushiki Kaisha Stage apparatus, lithography apparatus, and method of manufacturing article
JP6978840B2 (ja) * 2017-02-28 2021-12-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板保持装置
JP7246325B2 (ja) * 2017-06-06 2023-03-27 エーエスエムエル ネザーランズ ビー．ブイ． サポートテーブルから物体をアンロードする方法
JP6418281B2 (ja) * 2017-06-07 2018-11-07 株式会社ニコン 露光装置
US11123845B2 (en) 2017-06-21 2021-09-21 Hp Indigo B.V. Vacuum tables
JP7015910B2 (ja) 2017-10-12 2022-02-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置において使用される基板ホルダ
CN111418051B (zh) 2017-11-10 2024-01-12 应用材料公司 用于双面处理的图案化夹盘
WO2019115195A1 (en) 2017-12-13 2019-06-20 Asml Netherlands B.V. Substrate holder for use in a lithographic apparatus
JP2019193995A (ja) * 2018-05-02 2019-11-07 カンタツ株式会社 積層造形装置および積層造形装置の制御方法
WO2019226525A1 (en) * 2018-05-23 2019-11-28 Ii-Vi Delaware, Inc. Apparatus for supporting thinned semiconductor wafers
JP2019032552A (ja) * 2018-10-10 2019-02-28 株式会社ニコン 露光装置、露光方法、デバイス製造方法
US11482417B2 (en) * 2019-08-23 2022-10-25 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor structure
US11638882B2 (en) * 2020-04-26 2023-05-02 Shantou Chenghai Lichengfeng Plastic Products Factory Wall-climbing vehicle and bottom cover of such vehicle
KR102381348B1 (ko) * 2020-10-29 2022-03-30 한국전기연구원 탄화규소 웨이퍼의 tsd와 ted 결함 비파괴 분석법
KR20220090909A (ko) 2020-12-23 2022-06-30 정주은 수분 감지센서를 이용한 화분 관리
CN113411937B (zh) * 2021-05-07 2022-12-27 深圳市声光行科技发展有限公司 一种舞台灯光控制平台
WO2023241893A1 (en) * 2022-06-15 2023-12-21 Asml Netherlands B.V. Substrate support and lithographic apparatus

Family Cites Families (257)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US221563A (en) * 1879-11-11 Arthur l
DE221563C (ko)
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS62221130A (ja) * 1986-03-24 1987-09-29 Toshiba Corp 真空チヤツク装置
JPS6394627A (ja) * 1986-10-09 1988-04-25 Nec Corp 半導体の製造装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH0793254B2 (ja) * 1987-07-22 1995-10-09 松下電子工業株式会社 レジスト膜形成用基板の処理方法
JPH0831515B2 (ja) * 1988-06-21 1996-03-27 株式会社ニコン 基板の吸着装置
JP2978192B2 (ja) 1990-02-19 1999-11-15 株式会社ピュアレックス 半導体ウエハー試料作成法
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH05235151A (ja) * 1992-02-20 1993-09-10 Canon Inc 基板保持盤
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5591958A (en) 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH06326174A (ja) * 1993-05-12 1994-11-25 Hitachi Ltd ウェハ真空吸着装置
JPH0781978A (ja) 1993-06-18 1995-03-28 Olympus Optical Co Ltd ガラス製光学部品における撥水性を有する反射防止膜
JP2890089B2 (ja) * 1993-09-06 1999-05-10 東京エレクトロン株式会社 処理装置
JPH07220990A (ja) * 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JP3387075B2 (ja) * 1994-12-12 2003-03-17 株式会社ニコン 走査露光方法、露光装置、及び走査型露光装置
JPH08250402A (ja) 1995-03-15 1996-09-27 Nikon Corp 走査型露光方法及び装置
JP3312164B2 (ja) * 1995-04-07 2002-08-05 日本電信電話株式会社 真空吸着装置
JPH0936212A (ja) * 1995-05-16 1997-02-07 Shinko Electric Co Ltd 静電チャック
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands Bv In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6381013B1 (en) 1997-06-25 2002-04-30 Northern Edge Associates Test slide for microscopes and method for the production of such a slide
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4001661B2 (ja) * 1997-07-08 2007-10-31 沖電気工業株式会社 ウェハ載置台、ウェハ裏面の処理方法、露光装置、および回転塗布装置
JPH11111819A (ja) 1997-09-30 1999-04-23 Asahi Kasei Micro Syst Co Ltd ウェハーの固定方法及び露光装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11163103A (ja) * 1997-11-25 1999-06-18 Hitachi Ltd 半導体装置の製造方法および製造装置
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100638533B1 (ko) * 1998-02-09 2006-10-26 가부시키가이샤 니콘 기판지지장치, 기판반송장치 및 그 방법, 기판교환방법,그리고 노광장치 및 그 제조방법
JPH11239758A (ja) * 1998-02-26 1999-09-07 Dainippon Screen Mfg Co Ltd 基板処理装置
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
AU3849199A (en) 1998-05-19 1999-12-06 Nikon Corporation Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method
US6819414B1 (en) 1998-05-19 2004-11-16 Nikon Corporation Aberration measuring apparatus, aberration measuring method, projection exposure apparatus having the same measuring apparatus, device manufacturing method using the same measuring method, and exposure method
US6036586A (en) 1998-07-29 2000-03-14 Micron Technology, Inc. Apparatus and method for reducing removal forces for CMP pads
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
AU4779600A (en) 1999-05-20 2000-12-12 Nikon Corporation Container for holder exposure apparatus, device manufacturing method, and device manufacturing apparatus
DE69930398T2 (de) 1999-09-20 2006-10-19 Nikon Corp. Belichtungssystem mit einem parallelen Verbindungsmechanismus und Belichtungsverfahren
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
EP1291910B1 (en) * 2000-01-28 2007-01-10 Hitachi Tokyo Electronics Co., Ltd. Wafer chuck, exposure system, and method of manufacturing semiconductor device
JP2001332609A (ja) * 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
TW522460B (en) 2000-03-30 2003-03-01 Nikon Corp Exposure apparatus, exposure method, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002229215A (ja) * 2001-01-30 2002-08-14 Nikon Corp 露光方法及び露光装置
EP1231514A1 (en) 2001-02-13 2002-08-14 Asm Lithography B.V. Measurement of wavefront aberrations in a lithographic projection apparatus
JP2002248344A (ja) * 2001-02-26 2002-09-03 Nikon Corp 極端紫外光発生装置並びにそれを用いた露光装置及び半導体製造方法
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
JP4412450B2 (ja) 2001-10-05 2010-02-10 信越化学工業株式会社 反射防止フィルター
KR100724135B1 (ko) 2001-10-05 2007-06-04 신에쓰 가가꾸 고교 가부시끼가이샤 퍼플루오로폴리에테르-변성 실란, 표면처리제, 및반사방지 필터
JP2003124089A (ja) * 2001-10-09 2003-04-25 Nikon Corp 荷電粒子線露光装置及び露光方法
TW521320B (en) 2001-12-10 2003-02-21 Via Tech Inc Device and method for substrate exposure
JP2003240906A (ja) 2002-02-20 2003-08-27 Dainippon Printing Co Ltd 反射防止体およびその製造方法
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
US6828542B2 (en) 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP4099116B2 (ja) 2002-06-14 2008-06-11 エーエスエムエル ネザーランズ ビー．ブイ． 自己集合単分子層を伴う光学エレメントを備えたｅｕｖリソグラフィ投影装置、自己集合単分子層を伴う光学エレメント、自己集合単分子層を適用する方法、デバイス製造法
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US6988327B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101382738B (zh) * 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
SG150388A1 (en) 2002-12-10 2009-03-30 Nikon Corp Exposure apparatus and method for producing device
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
WO2004053955A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4595320B2 (ja) 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
USRE48515E1 (en) 2002-12-19 2021-04-13 Asml Netherlands B.V. Method and device for irradiating spots on a layer
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP2005250511A (ja) * 2003-02-20 2005-09-15 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料による保護膜を有するレジスト膜、および該保護膜を用いたレジストパターン形成方法
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) * 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
KR101121655B1 (ko) 2003-04-10 2012-03-09 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR101238142B1 (ko) 2003-04-10 2013-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
EP1611482B1 (en) 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG2014015135A (en) 2003-04-11 2015-06-29 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
SG10201504396VA (en) 2003-04-11 2015-07-30 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
ATE542167T1 (de) 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
TW200424730A (en) 2003-05-03 2004-11-16 Jiahn-Chang Wu Projector with UV light source.
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI503865B (zh) * 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI282487B (en) * 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
TWI442694B (zh) * 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
US7213963B2 (en) * 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
TWI467634B (zh) * 2003-06-13 2015-01-01 尼康股份有限公司 An exposure method, a substrate stage, an exposure apparatus, and an element manufacturing method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4343597B2 (ja) 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20060027832A (ko) 2003-07-01 2006-03-28 가부시키가이샤 니콘 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법
EP2466382B1 (en) 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005057294A (ja) 2003-08-07 2005-03-03 Asml Netherlands Bv インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1660925B1 (en) 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4378136B2 (ja) 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1519231B1 (en) 2003-09-29 2005-12-21 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI525660B (zh) 2003-09-29 2016-03-11 尼康股份有限公司 An exposure apparatus and an exposure method, and an element manufacturing method
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP2005150290A (ja) 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
EP1531362A3 (en) 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
US7528929B2 (en) * 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE10355301B3 (de) 2003-11-27 2005-06-23 Infineon Technologies Ag Verfahren zur Abbildung einer Struktur auf einen Halbleiter-Wafer mittels Immersionslithographie
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175016A (ja) * 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
JP2005175034A (ja) 2003-12-09 2005-06-30 Canon Inc 露光装置
JP2007516613A (ja) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも１つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
KR101941351B1 (ko) * 2003-12-15 2019-01-22 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
JP4308638B2 (ja) 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20050185269A1 (en) * 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
JP2005183744A (ja) * 2003-12-22 2005-07-07 Nikon Corp 露光装置及びデバイス製造方法
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) * 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102830487A (zh) * 2004-01-14 2012-12-19 卡尔蔡司Smt有限责任公司 反射折射投影物镜
CN101793993B (zh) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 光学元件、光学布置及系统
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) * 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
WO2005074606A2 (en) 2004-02-03 2005-08-18 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
CN1922528A (zh) 2004-02-18 2007-02-28 康宁股份有限公司 用于具有深紫外光的高数值孔径成象的反折射成象系统
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) * 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) * 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) * 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) * 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7091502B2 (en) * 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
EP1751601B1 (en) 2004-05-17 2007-12-05 Carl Zeiss SMT AG Catadioptric projection objective with intermediate images
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101257960B1 (ko) 2004-06-04 2013-04-24 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
EP1759248A1 (en) 2004-06-04 2007-03-07 Carl Zeiss SMT AG Projection system with compensation of intensity variatons and compensation element therefor
KR101227290B1 (ko) * 2004-06-09 2013-01-29 가부시키가이샤 니콘 기판 유지 장치 및 그것을 구비하는 노광 장치, 노광 방법,디바이스 제조 방법, 그리고 발액 플레이트
KR101330922B1 (ko) 2004-06-21 2013-11-18 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
SG188899A1 (en) * 2004-09-17 2013-04-30 Nikon Corp Substrate holding device, exposure apparatus, and device manufacturing method
KR101285951B1 (ko) * 2004-10-26 2013-07-12 가부시키가이샤 니콘 기판 처리 방법, 노광 장치 및 디바이스 제조 방법
US7230681B2 (en) * 2004-11-18 2007-06-12 International Business Machines Corporation Method and apparatus for immersion lithography
JP2006270057A (ja) 2005-02-28 2006-10-05 Canon Inc 露光装置
EP1876635A4 (en) * 2005-04-25 2010-06-30 Nikon Corp EXPOSURE METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
US20070177119A1 (en) * 2006-02-02 2007-08-02 Keiko Chiba Exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
TW201701324A (zh) 2017-01-01
KR20150023924A (ko) 2015-03-05
US7483119B2 (en) 2009-01-27
JP5699979B2 (ja) 2015-04-15
JP2013016839A (ja) 2013-01-24
JP2016106274A (ja) 2016-06-16
JP5152143B2 (ja) 2013-02-27
US8384880B2 (en) 2013-02-26
KR101528089B1 (ko) 2015-06-11
JP2017187786A (ja) 2017-10-12
US20170329234A1 (en) 2017-11-16
KR101520591B1 (ko) 2015-05-14
EP1641028B1 (en) 2015-08-05
TW201818451A (zh) 2018-05-16
JP2010010703A (ja) 2010-01-14
JP2014140059A (ja) 2014-07-31
TWI409853B (zh) 2013-09-21
JP2012248892A (ja) 2012-12-13
KR20110117209A (ko) 2011-10-26
KR101729866B1 (ko) 2017-04-24
EP3104396A1 (en) 2016-12-14
JP5692188B2 (ja) 2015-04-01
EP3104396B1 (en) 2018-03-21
US9846371B2 (en) 2017-12-19
US8208117B2 (en) 2012-06-26
WO2004112108A1 (ja) 2004-12-23
US20130141701A1 (en) 2013-06-06
KR101528016B1 (ko) 2015-06-12
TWI467634B (zh) 2015-01-01
JP2012129566A (ja) 2012-07-05
EP2738792A3 (en) 2014-08-06
JP2015163970A (ja) 2015-09-10
EP3401946A1 (en) 2018-11-14
JP6256498B2 (ja) 2018-01-10
TW201619719A (zh) 2016-06-01
JP6172196B2 (ja) 2017-08-02
HK1258606A1 (zh) 2019-11-15
JP5152215B2 (ja) 2013-02-27
KR101940892B1 (ko) 2019-01-21
US20090015816A1 (en) 2009-01-15
US8040491B2 (en) 2011-10-18
KR20160113745A (ko) 2016-09-30
TW201214518A (en) 2012-04-01
JP2010161381A (ja) 2010-07-22
TW200952044A (en) 2009-12-16
EP2937893A1 (en) 2015-10-28
KR20180112884A (ko) 2018-10-12
JPWO2004112108A1 (ja) 2006-07-27
TWI607292B (zh) 2017-12-01
TWI619148B (zh) 2018-03-21
JP2019003218A (ja) 2019-01-10
US20090015808A1 (en) 2009-01-15
JP5692189B2 (ja) 2015-04-01
EP1641028A1 (en) 2006-03-29
JP6477785B2 (ja) 2019-03-06
KR20130102645A (ko) 2013-09-17
KR101242815B1 (ko) 2013-03-12
TW201445617A (zh) 2014-12-01
KR101421866B1 (ko) 2014-07-22
US9019467B2 (en) 2015-04-28
JP5817869B2 (ja) 2015-11-18
EP1641028A4 (en) 2008-10-15
EP2937893B1 (en) 2016-09-28
US20060227312A1 (en) 2006-10-12
TWI560749B (ko) 2016-12-01
JP4415939B2 (ja) 2010-02-17
KR20120115599A (ko) 2012-10-18
US20060139614A1 (en) 2006-06-29
EP2738792A2 (en) 2014-06-04
US9268237B2 (en) 2016-02-23
US20130141703A1 (en) 2013-06-06
US20150301457A1 (en) 2015-10-22
US20080117394A1 (en) 2008-05-22
KR101290021B1 (ko) 2013-07-30
HK1214680A1 (zh) 2016-07-29
KR20120125564A (ko) 2012-11-15
KR20060016812A (ko) 2006-02-22
TW200511388A (en) 2005-03-16
EP2738792B1 (en) 2015-08-05
KR20140052043A (ko) 2014-05-02
TWI352375B (ko) 2011-11-11

Similar Documents

Publication Publication Date Title
HK1214680A1 (zh) 曝光方法、基片台、曝光設備以及器件製造方法
HK1251949A1 (zh) 曝光方法和曝光裝置、及半導體元件製造方法
HK1256632A1 (zh) 曝光裝置以及製造設備的方法
HK1243226B (zh) 曝光裝置、曝光方法以及器件製造方法
HK1140550A1 (en) Exposure method and apparatus, and device manufacturing method
HK1093119A1 (en) Exposure apparatus, exposure method, and device manufacturing method
SG10201607457PA (en) Exposure apparatus, exposure method and device manufacturing method
SG10201801998TA (en) Substrate holding device, exposure apparatus, and device manufacturing method
HK1110701A1 (en) Substrate holding apparatus, exposure apparatus and device manufacturing method
SG118190A1 (en) Exposure apparatus and stage device and device manufacturing method
EP1814144A4 (en) SUBSTRATE PROCESSING METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
AU2003289271A1 (en) Exposure apparatus, exposure method and method for manufacturing device
AU2003302831A1 (en) Exposure method, exposure apparatus and method for manufacturing device
EP1821338A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND MANUFACTURING METHOD FOR THE DEVICE
SG116555A1 (en) Lithographic apparatus and device manufacturing method.
SG116549A1 (en) Lithographic apparatus and device manufacturing method.
SG121762A1 (en) Lithographic apparatus, and device manufacturing method
SG2011031200A (en) Exposure apparatus and device manufacturing method
AU2003289236A1 (en) Exposure apparatus and method for manufacturing device
AU2003289273A1 (en) Exposure apparatus and method for manufacturing device
AU2003289199A1 (en) Exposure apparatus and method for manufacturing device
AU2003289237A1 (en) Exposure apparatus and method for manufacturing device
AU2003302830A1 (en) Exposure apparatus and method for manufacturing device
EP1628330A4 (en) EXPOSURE METHOD, EXPOSURE DEVICE, AND DEVICE MANUFACTURING METHOD
IL181873A0 (en) Exposure apparatus, exposure method, and method for manufacturing device

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20200611