CN1414563A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1414563A CN1414563A CN02147101A CN02147101A CN1414563A CN 1414563 A CN1414563 A CN 1414563A CN 02147101 A CN02147101 A CN 02147101A CN 02147101 A CN02147101 A CN 02147101A CN 1414563 A CN1414563 A CN 1414563A
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/22—Control and timing of internal memory operations
- G11C2207/2227—Standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Memory System (AREA)
- Dram (AREA)
Abstract
Description
Claims (15)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510869949.XA CN105513626B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201310146345.3A CN103295625B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201810013684.7A CN108053849B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001324357A JP2003132683A (ja) | 2001-10-23 | 2001-10-23 | 半導体装置 |
JP324357/2001 | 2001-10-23 |
Related Child Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310146345.3A Division CN103295625B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201810013684.7A Division CN108053849B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201510869949.XA Division CN105513626B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN2009100074358A Division CN101488366B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN2011102643878A Division CN102324250B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1414563A true CN1414563A (zh) | 2003-04-30 |
CN100476998C CN100476998C (zh) | 2009-04-08 |
Family
ID=19141094
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310146345.3A Expired - Lifetime CN103295625B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201810013684.7A Expired - Lifetime CN108053849B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201510869949.XA Expired - Lifetime CN105513626B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN2011102643878A Expired - Lifetime CN102324250B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CNB021471010A Expired - Lifetime CN100476998C (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN2009100074358A Expired - Lifetime CN101488366B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310146345.3A Expired - Lifetime CN103295625B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201810013684.7A Expired - Lifetime CN108053849B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN201510869949.XA Expired - Lifetime CN105513626B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
CN2011102643878A Expired - Lifetime CN102324250B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100074358A Expired - Lifetime CN101488366B (zh) | 2001-10-23 | 2002-10-22 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (13) | US6657911B2 (zh) |
JP (1) | JP2003132683A (zh) |
KR (2) | KR20030033959A (zh) |
CN (6) | CN103295625B (zh) |
TW (1) | TWI226639B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100354793C (zh) * | 2004-10-05 | 2007-12-12 | 恩益禧电子股份有限公司 | 集成电路器件 |
CN100433190C (zh) * | 2003-06-05 | 2008-11-12 | 株式会社瑞萨科技 | 可控制电源线与/或接地线的电位电平的半导体存储装置 |
CN101303888A (zh) * | 2007-02-15 | 2008-11-12 | 意法半导体公司 | 具有电压的可转换电源组的sram |
CN100543994C (zh) * | 2006-07-19 | 2009-09-23 | 国际商业机器公司 | 减少集成电路泄漏电流的方法和设备 |
CN101874272A (zh) * | 2008-01-30 | 2010-10-27 | 艾格瑞系统有限公司 | 用于提高电子电路中成品率的方法和设备 |
US7885109B2 (en) | 2007-12-03 | 2011-02-08 | Industrial Technology Research Institute | Memory and method for dissipation caused by current leakage |
CN101504863B (zh) * | 2008-02-05 | 2012-03-14 | 财团法人工业技术研究院 | 存储器与抑制存储器漏电流能量损耗的方法 |
CN1871869B (zh) * | 2003-09-19 | 2012-07-04 | 高通股份有限公司 | 无线终端机的电源骤降 |
CN103247333A (zh) * | 2012-02-09 | 2013-08-14 | 尘埃网络股份有限公司 | 低泄漏电路、装置和技术 |
US9804645B2 (en) | 2012-01-23 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Systems and methods for individually controlling power supply voltage to circuits in a semiconductor device |
Families Citing this family (122)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4974202B2 (ja) * | 2001-09-19 | 2012-07-11 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP2003132683A (ja) | 2001-10-23 | 2003-05-09 | Hitachi Ltd | 半導体装置 |
JP2003188351A (ja) * | 2001-12-17 | 2003-07-04 | Hitachi Ltd | 半導体集積回路 |
JP2004021574A (ja) * | 2002-06-17 | 2004-01-22 | Hitachi Ltd | 半導体装置 |
US7173875B2 (en) * | 2002-11-29 | 2007-02-06 | International Business Machines Corporation | SRAM array with improved cell stability |
JP4388274B2 (ja) * | 2002-12-24 | 2009-12-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
US7027346B2 (en) * | 2003-01-06 | 2006-04-11 | Texas Instruments Incorporated | Bit line control for low power in standby |
US7039818B2 (en) * | 2003-01-22 | 2006-05-02 | Texas Instruments Incorporated | Low leakage SRAM scheme |
US7092307B2 (en) * | 2003-04-02 | 2006-08-15 | Qualcomm Inc. | Leakage current reduction for CMOS memory circuits |
US7061820B2 (en) * | 2003-08-27 | 2006-06-13 | Texas Instruments Incorporated | Voltage keeping scheme for low-leakage memory devices |
KR101236464B1 (ko) * | 2004-01-30 | 2013-02-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
US7425841B2 (en) | 2004-02-14 | 2008-09-16 | Tabula Inc. | Configurable circuits, IC's, and systems |
JP4549711B2 (ja) * | 2004-03-29 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体回路装置 |
JP2006040495A (ja) * | 2004-07-30 | 2006-02-09 | Renesas Technology Corp | 半導体集積回路装置 |
US7196925B1 (en) * | 2004-08-26 | 2007-03-27 | Cypress Semiconductor Corporation | Memory array with current limiting device for preventing particle induced latch-up |
JP4553185B2 (ja) * | 2004-09-15 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
ATE459961T1 (de) * | 2004-09-22 | 2010-03-15 | Nxp Bv | Speichersteuerung mit selektiver retention |
US7317331B2 (en) | 2004-11-08 | 2008-01-08 | Tabula, Inc. | Reconfigurable IC that has sections running at different reconfiguration rates |
FR2878068A1 (fr) * | 2004-11-15 | 2006-05-19 | St Microelectronics Sa | Memoire a cellule de memorisation polarisee par groupe |
US7272031B1 (en) * | 2005-03-15 | 2007-09-18 | Tabula, Inc. | Method and apparatus for reduced power cell |
JP4578329B2 (ja) * | 2005-06-03 | 2010-11-10 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US7355905B2 (en) | 2005-07-01 | 2008-04-08 | P.A. Semi, Inc. | Integrated circuit with separate supply voltage for memory that is different from logic circuit supply voltage |
JP4671786B2 (ja) | 2005-07-04 | 2011-04-20 | パナソニック株式会社 | 半導体集積回路装置 |
JP2007035091A (ja) * | 2005-07-22 | 2007-02-08 | Sony Corp | 半導体記憶装置 |
US7894291B2 (en) * | 2005-09-26 | 2011-02-22 | International Business Machines Corporation | Circuit and method for controlling a standby voltage level of a memory |
JP2007122814A (ja) * | 2005-10-28 | 2007-05-17 | Oki Electric Ind Co Ltd | 半導体集積回路及びリーク電流低減方法 |
US7568177B1 (en) * | 2005-10-31 | 2009-07-28 | Cadence Design Systems, Inc. | System and method for power gating of an integrated circuit |
JP2007157199A (ja) * | 2005-12-01 | 2007-06-21 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US7366036B2 (en) * | 2006-01-13 | 2008-04-29 | International Business Machines Corporation | Memory device with control circuit for regulating power supply voltage |
US7911855B2 (en) * | 2006-02-24 | 2011-03-22 | Renesas Technology Corp. | Semiconductor device with voltage interconnections |
JP2007226632A (ja) | 2006-02-24 | 2007-09-06 | Denso Corp | マイクロコンピュータ |
JP2007234861A (ja) | 2006-03-01 | 2007-09-13 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4805698B2 (ja) * | 2006-03-13 | 2011-11-02 | 株式会社東芝 | 半導体記憶装置 |
JP4936749B2 (ja) * | 2006-03-13 | 2012-05-23 | 株式会社東芝 | 半導体記憶装置 |
US7489560B2 (en) * | 2006-04-05 | 2009-02-10 | Spansion Llc | Reduction of leakage current and program disturbs in flash memory devices |
TWI318344B (en) * | 2006-05-10 | 2009-12-11 | Realtek Semiconductor Corp | Substrate biasing apparatus |
JP4702179B2 (ja) * | 2006-05-22 | 2011-06-15 | 株式会社デンソー | A/d変換回路 |
JP5034379B2 (ja) * | 2006-08-30 | 2012-09-26 | 富士通セミコンダクター株式会社 | 半導体メモリおよびシステム |
JP2008071462A (ja) * | 2006-09-15 | 2008-03-27 | Toshiba Corp | 半導体記憶装置 |
JP5057757B2 (ja) * | 2006-11-30 | 2012-10-24 | 株式会社東芝 | 半導体集積回路 |
US7596012B1 (en) * | 2006-12-04 | 2009-09-29 | Marvell International Ltd. | Write-assist and power-down circuit for low power SRAM applications |
JP5057430B2 (ja) | 2006-12-18 | 2012-10-24 | ルネサスエレクトロニクス株式会社 | 半導体集積回路とその製造方法 |
JP5143413B2 (ja) * | 2006-12-20 | 2013-02-13 | オンセミコンダクター・トレーディング・リミテッド | 半導体集積回路 |
ITVA20060081A1 (it) * | 2006-12-22 | 2008-06-23 | St Microelectronics Srl | Riduzione del consumo da parte di un sistema elettronico integrato comprendente distinte risorse statiche ad accesso casuale di memorizzazione dati |
JP2008191442A (ja) * | 2007-02-06 | 2008-08-21 | Nec Electronics Corp | 表示ドライバic |
US7688669B2 (en) * | 2007-02-15 | 2010-03-30 | Stmicroelectronics, Inc. | Programmable SRAM source bias scheme for use with switchable SRAM power supply sets of voltages |
US7623405B2 (en) | 2007-02-15 | 2009-11-24 | Stmicroelectronics, Inc. | SRAM with switchable power supply sets of voltages |
US8112468B1 (en) | 2007-03-22 | 2012-02-07 | Tabula, Inc. | Method and apparatus for performing an operation with a plurality of sub-operations in a configurable IC |
US7414878B1 (en) * | 2007-05-04 | 2008-08-19 | International Business Machines Corporation | Method for implementing domino SRAM leakage current reduction |
US20080285367A1 (en) * | 2007-05-18 | 2008-11-20 | Chang Ho Jung | Method and apparatus for reducing leakage current in memory arrays |
JP4364260B2 (ja) * | 2007-05-28 | 2009-11-11 | 株式会社東芝 | 半導体記憶装置 |
CN101689399A (zh) * | 2007-06-29 | 2010-03-31 | Nxp股份有限公司 | 静态存储器件 |
US7626852B2 (en) * | 2007-07-23 | 2009-12-01 | Texas Instruments Incorporated | Adaptive voltage control for SRAM |
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