CN103247333A - 低泄漏电路、装置和技术 - Google Patents
低泄漏电路、装置和技术 Download PDFInfo
- Publication number
- CN103247333A CN103247333A CN2013100526506A CN201310052650A CN103247333A CN 103247333 A CN103247333 A CN 103247333A CN 2013100526506 A CN2013100526506 A CN 2013100526506A CN 201310052650 A CN201310052650 A CN 201310052650A CN 103247333 A CN103247333 A CN 103247333A
- Authority
- CN
- China
- Prior art keywords
- sub
- piece
- power supply
- standby mode
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 28
- 238000002955 isolation Methods 0.000 claims abstract description 19
- 230000000694 effects Effects 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 30
- 239000007943 implant Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000005516 engineering process Methods 0.000 description 19
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 13
- 230000006870 function Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005059 dormancy Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- YGYGASJNJTYNOL-CQSZACIVSA-N 3-[(4r)-2,2-dimethyl-1,1-dioxothian-4-yl]-5-(4-fluorophenyl)-1h-indole-7-carboxamide Chemical compound C1CS(=O)(=O)C(C)(C)C[C@@H]1C1=CNC2=C(C(N)=O)C=C(C=3C=CC(F)=CC=3)C=C12 YGYGASJNJTYNOL-CQSZACIVSA-N 0.000 description 1
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 208000003443 Unconsciousness Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261596892P | 2012-02-09 | 2012-02-09 | |
US61/596,892 | 2012-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103247333A true CN103247333A (zh) | 2013-08-14 |
CN103247333B CN103247333B (zh) | 2017-06-06 |
Family
ID=47750393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310052650.6A Active CN103247333B (zh) | 2012-02-09 | 2013-02-18 | 低泄漏电路、装置和技术 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9160312B2 (zh) |
EP (1) | EP2626862B1 (zh) |
CN (1) | CN103247333B (zh) |
TW (1) | TWI514381B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106143355A (zh) * | 2016-06-29 | 2016-11-23 | 东风柳州汽车有限公司 | Dcdc转换器的控制方法 |
CN110531136A (zh) * | 2018-05-23 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | 标准单元漏电流的测试电路及测试方法 |
CN112906325A (zh) * | 2021-04-21 | 2021-06-04 | 湖北九同方微电子有限公司 | 大规模集成电路电磁场快速求解器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150168973A1 (en) * | 2013-12-18 | 2015-06-18 | Hashfast LLC | Stacked chips powered from shared voltage sources |
US10691195B2 (en) | 2018-02-28 | 2020-06-23 | Qualcomm Incorporated | Selective coupling of memory to voltage rails based on operating mode of processor |
TWI839669B (zh) * | 2021-12-27 | 2024-04-21 | 新唐科技股份有限公司 | 電子裝置及其電源控制的方法 |
CN118444007A (zh) * | 2024-06-27 | 2024-08-06 | 深圳市微源半导体股份有限公司 | 电压采样电路、电压变换器及电源设备 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1380696A (zh) * | 2001-04-11 | 2002-11-20 | 株式会社东芝 | 半导体集成电路 |
CN1414563A (zh) * | 2001-10-23 | 2003-04-30 | 株式会社日立制作所 | 半导体器件 |
US7023761B1 (en) * | 2005-05-20 | 2006-04-04 | Texas Instruments Incorporated | Programmable stackable memory array system |
US20070159874A1 (en) * | 2002-12-24 | 2007-07-12 | Renesas Technology Corp. | Semiconductor memory device |
CN101430930A (zh) * | 2008-09-23 | 2009-05-13 | 中国科学院上海微系统与信息技术研究所 | 一种电阻转换存储单元及其方法 |
CN101681671A (zh) * | 2007-05-18 | 2010-03-24 | 高通股份有限公司 | 用于在存储器阵列中减少泄漏电流的方法及设备 |
US20110273951A1 (en) * | 2010-05-10 | 2011-11-10 | Hung-Yu Li | Memory circuit and method for controlling memory circuit |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE534994T1 (de) * | 2006-04-28 | 2011-12-15 | Mosaid Technologies Inc | Sram-reststromreduktionsschaltung |
US20080309384A1 (en) * | 2007-06-13 | 2008-12-18 | Honeywell International Inc. | Initialization Circuitry Having Fuse Leakage Current Tolerance |
JP2009187354A (ja) * | 2008-02-07 | 2009-08-20 | Nec Electronics Corp | 半導体集積回路、その設計方法、半導体集積回路設計プログラム、及び半導体集積回路設計装置 |
KR101612298B1 (ko) * | 2009-03-13 | 2016-04-14 | 삼성전자주식회사 | 파워 게이팅 회로 및 이를 포함하는 집적 회로 |
US7948792B1 (en) * | 2009-04-15 | 2011-05-24 | Altera Corporation | Memory and techniques for using same |
US8710916B2 (en) * | 2011-02-03 | 2014-04-29 | Freescale Semiconductor, Inc. | Electronic circuit having shared leakage current reduction circuits |
-
2013
- 2013-02-08 TW TW102105294A patent/TWI514381B/zh active
- 2013-02-08 US US13/763,190 patent/US9160312B2/en active Active
- 2013-02-08 EP EP13000683.6A patent/EP2626862B1/en active Active
- 2013-02-18 CN CN201310052650.6A patent/CN103247333B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1380696A (zh) * | 2001-04-11 | 2002-11-20 | 株式会社东芝 | 半导体集成电路 |
CN1414563A (zh) * | 2001-10-23 | 2003-04-30 | 株式会社日立制作所 | 半导体器件 |
US20070159874A1 (en) * | 2002-12-24 | 2007-07-12 | Renesas Technology Corp. | Semiconductor memory device |
US7023761B1 (en) * | 2005-05-20 | 2006-04-04 | Texas Instruments Incorporated | Programmable stackable memory array system |
CN101681671A (zh) * | 2007-05-18 | 2010-03-24 | 高通股份有限公司 | 用于在存储器阵列中减少泄漏电流的方法及设备 |
CN101430930A (zh) * | 2008-09-23 | 2009-05-13 | 中国科学院上海微系统与信息技术研究所 | 一种电阻转换存储单元及其方法 |
US20110273951A1 (en) * | 2010-05-10 | 2011-11-10 | Hung-Yu Li | Memory circuit and method for controlling memory circuit |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106143355A (zh) * | 2016-06-29 | 2016-11-23 | 东风柳州汽车有限公司 | Dcdc转换器的控制方法 |
CN110531136A (zh) * | 2018-05-23 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | 标准单元漏电流的测试电路及测试方法 |
CN110531136B (zh) * | 2018-05-23 | 2021-11-12 | 中芯国际集成电路制造(上海)有限公司 | 标准单元漏电流的测试电路及测试方法 |
CN112906325A (zh) * | 2021-04-21 | 2021-06-04 | 湖北九同方微电子有限公司 | 大规模集成电路电磁场快速求解器 |
CN112906325B (zh) * | 2021-04-21 | 2023-09-19 | 湖北九同方微电子有限公司 | 大规模集成电路电磁场快速求解器 |
Also Published As
Publication number | Publication date |
---|---|
TWI514381B (zh) | 2015-12-21 |
CN103247333B (zh) | 2017-06-06 |
US9160312B2 (en) | 2015-10-13 |
EP2626862A1 (en) | 2013-08-14 |
US20130257500A1 (en) | 2013-10-03 |
EP2626862B1 (en) | 2016-02-03 |
TW201346906A (zh) | 2013-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103247333A (zh) | 低泄漏电路、装置和技术 | |
US9720434B2 (en) | Power gating in an electronic device | |
CN204791989U (zh) | 耐高电压的字线驱动器和包含该字线驱动器的存储器及其系统 | |
CN103000626A (zh) | 合成结构的高压器件及启动电路 | |
CN101552269A (zh) | 电路布局方法及布局电路 | |
US11418171B2 (en) | Low power consumption switching circuit with voltage isolation function for PMOS transistor bulk, and integrated chip | |
JP2009147933A (ja) | パワーゲーティングcmos回路及びスーパーカットオフcmos回路におけるチャージリサイクリング | |
JP2020129425A (ja) | ランダム・アクセス・メモリ及び関連する回路、方法及びシステム | |
CN1505152A (zh) | 减少的集成电路芯片泄漏以及减少泄漏的方法 | |
US20130328117A1 (en) | Floating gate non-volatile memory bit cell | |
CN104052454A (zh) | 用于高密度集成电路的电平转换器 | |
Blutman et al. | A low-power microcontroller in a 40-nm cmos using charge recycling | |
CN102684670B (zh) | 零倒灌电流的信号高速输出电路 | |
CN104320125B (zh) | 低功耗同步时序数字电路芯片及该芯片时钟信号生成方法 | |
CN101227183B (zh) | 施密特触发电路 | |
CN202652167U (zh) | 开关电路 | |
CN103000221B (zh) | 半导体装置 | |
CN106330172B (zh) | 高电压阈值器件的传输门及其后续下拉电路结构 | |
CN105099428B (zh) | 微处理器装置、集成电路以及选择基底偏压的方法 | |
CN101459424B (zh) | 输出单元、输入单元以及输入输出元件 | |
CN104579308A (zh) | 一种改善电平转换电路负偏压温度不稳定性的恢复电路 | |
CN204759260U (zh) | 待机省电装置、芯片 | |
Saxena et al. | Enhanced power gating schemes for low leakage low ground bounce noise in deep submicron circuits | |
CN203055909U (zh) | 一种合成结构的高压器件 | |
CN107317578A (zh) | 电压准位移位电路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: LINEAR TECHN INC. Free format text: FORMER OWNER: DUST NETWORKS INC. Effective date: 20150722 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150722 Address after: The United States of California Milpitas City Applicant after: LINEAR TECHNOLOGY Corp. Address before: Haywood, California, USA Applicant before: DUST NETWORKS, Inc. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: The United States of California Milpitas City Patentee after: LINEAR TECHNOLOGY Corp. Address before: The United States of California Milpitas City Patentee before: Linear Technology Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20210907 Address after: Limerick Patentee after: Analog equipment International Co.,Ltd. Address before: The United States of California Milpitas City Patentee before: LINEAR TECHNOLOGY Corp. |
|
TR01 | Transfer of patent right |