ATE534994T1 - Sram-reststromreduktionsschaltung - Google Patents
Sram-reststromreduktionsschaltungInfo
- Publication number
- ATE534994T1 ATE534994T1 AT07761457T AT07761457T ATE534994T1 AT E534994 T1 ATE534994 T1 AT E534994T1 AT 07761457 T AT07761457 T AT 07761457T AT 07761457 T AT07761457 T AT 07761457T AT E534994 T1 ATE534994 T1 AT E534994T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cell
- sram
- vth
- virtual ground
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79613806P | 2006-04-28 | 2006-04-28 | |
PCT/US2007/067633 WO2007127922A1 (en) | 2006-04-28 | 2007-04-27 | Sram leakage reduction circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE534994T1 true ATE534994T1 (de) | 2011-12-15 |
Family
ID=38460578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07761457T ATE534994T1 (de) | 2006-04-28 | 2007-04-27 | Sram-reststromreduktionsschaltung |
Country Status (6)
Country | Link |
---|---|
US (3) | US7684262B2 (de) |
EP (1) | EP2022056B1 (de) |
CN (1) | CN101432816A (de) |
AT (1) | ATE534994T1 (de) |
TW (2) | TW201426745A (de) |
WO (1) | WO2007127922A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201426745A (zh) * | 2006-04-28 | 2014-07-01 | Mosaid Technologies Inc | 降低sram漏電流之電路 |
WO2010026500A1 (en) * | 2008-09-02 | 2010-03-11 | Nxp B.V. | Static random access memory comprising a current source, and method to put memory cells of such a memory into sleep or write mode using said current source |
KR101012056B1 (ko) * | 2008-11-28 | 2011-02-01 | 한국표준과학연구원 | 다채널 타원계측 표면 플라즈몬 공명 측정장치 |
US8134874B2 (en) * | 2009-01-16 | 2012-03-13 | Apple Inc. | Dynamic leakage control for memory arrays |
US8004924B2 (en) * | 2009-02-18 | 2011-08-23 | Atmel Corporation | Voltage regulator for memory |
US8319548B2 (en) * | 2009-02-18 | 2012-11-27 | Freescale Semiconductor, Inc. | Integrated circuit having low power mode voltage regulator |
US20100283445A1 (en) * | 2009-02-18 | 2010-11-11 | Freescale Semiconductor, Inc. | Integrated circuit having low power mode voltage regulator |
US8400819B2 (en) * | 2010-02-26 | 2013-03-19 | Freescale Semiconductor, Inc. | Integrated circuit having variable memory array power supply voltage |
US8225123B2 (en) | 2010-05-26 | 2012-07-17 | Freescale Semiconductor, Inc. | Method and system for integrated circuit power supply management |
US9035629B2 (en) | 2011-04-29 | 2015-05-19 | Freescale Semiconductor, Inc. | Voltage regulator with different inverting gain stages |
US8503221B1 (en) | 2011-06-02 | 2013-08-06 | Richard Frederic Hobson | SRAM cell with common bit line and source line standby voltage |
TWI457935B (zh) * | 2011-12-22 | 2014-10-21 | Nat Univ Chung Cheng | Suitable for low operating voltage of the memory circuit |
US9378805B2 (en) | 2012-01-03 | 2016-06-28 | Medtronic, Inc. | Stable memory source bias over temperature and method |
TWI514381B (zh) * | 2012-02-09 | 2015-12-21 | Linear Techn Inc | 低漏洩之電路、裝置與技術 |
US9053791B2 (en) | 2012-03-07 | 2015-06-09 | Medtronic, Inc. | Flash memory with integrated ROM memory cells |
US10096350B2 (en) | 2012-03-07 | 2018-10-09 | Medtronic, Inc. | Memory array with flash and random access memory and method therefor, reading data from the flash memory without storing the data in the random access memory |
US9607708B2 (en) | 2012-03-07 | 2017-03-28 | Medtronic, Inc. | Voltage mode sensing for low power flash memory |
CN103700395B (zh) | 2012-09-28 | 2016-12-21 | 国际商业机器公司 | 存储器单元 |
US9760149B2 (en) | 2013-01-08 | 2017-09-12 | Qualcomm Incorporated | Enhanced dynamic memory management with intelligent current/power consumption minimization |
TWI498892B (zh) * | 2013-09-27 | 2015-09-01 | Univ Nat Cheng Kung | 靜態隨機存取記憶體之自適應性資料保持電壓調節系統 |
US9058046B1 (en) | 2013-12-16 | 2015-06-16 | International Business Machines Corporation | Leakage-aware voltage regulation circuit and method |
US9070433B1 (en) | 2014-03-11 | 2015-06-30 | International Business Machines Corporation | SRAM supply voltage global bitline precharge pulse |
JP6370151B2 (ja) * | 2014-07-31 | 2018-08-08 | エイブリック株式会社 | 半導体集積回路装置及びその出力電圧調整方法 |
US9620200B1 (en) | 2016-03-26 | 2017-04-11 | Arm Limited | Retention voltages for integrated circuits |
CN109308920B (zh) * | 2017-07-27 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 静态随机存取存储器阵列的供电控制电路 |
US11145359B2 (en) | 2019-04-10 | 2021-10-12 | Stmicroelectronics International N.V. | Reduced retention leakage SRAM |
US10950298B1 (en) * | 2020-01-17 | 2021-03-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mixed threshold voltage memory array |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5986923A (en) * | 1998-05-06 | 1999-11-16 | Hewlett-Packard Company | Method and apparatus for improving read/write stability of a single-port SRAM cell |
JP3291728B2 (ja) * | 1999-03-10 | 2002-06-10 | 日本電気株式会社 | 半導体スタティックメモリ |
US6914449B2 (en) | 2001-04-02 | 2005-07-05 | Xilinx, Inc. | Structure for reducing leakage current in submicron IC devices |
US6862207B2 (en) | 2002-10-15 | 2005-03-01 | Intel Corporation | Static random access memory |
US6977519B2 (en) | 2003-05-14 | 2005-12-20 | International Business Machines Corporation | Digital logic with reduced leakage |
US6839299B1 (en) * | 2003-07-24 | 2005-01-04 | International Business Machines Corporation | Method and structure for reducing gate leakage and threshold voltage fluctuation in memory cells |
WO2005057628A2 (en) | 2003-12-08 | 2005-06-23 | University Of South Florida | A method and apparatus for reducing leakage in integrated circuits |
US7020041B2 (en) * | 2003-12-18 | 2006-03-28 | Intel Corporation | Method and apparatus to clamp SRAM supply voltage |
US7372764B2 (en) * | 2004-08-11 | 2008-05-13 | Stmicroelectronics Pvt. Ltd. | Logic device with reduced leakage current |
JP4138718B2 (ja) * | 2004-08-31 | 2008-08-27 | 株式会社東芝 | 半導体記憶装置 |
US7099230B1 (en) | 2005-04-15 | 2006-08-29 | Texas Instruments Incorporated | Virtual ground circuit for reducing SRAM standby power |
TW201426745A (zh) * | 2006-04-28 | 2014-07-01 | Mosaid Technologies Inc | 降低sram漏電流之電路 |
-
2007
- 2007-04-27 TW TW103102454A patent/TW201426745A/zh unknown
- 2007-04-27 EP EP07761457A patent/EP2022056B1/de active Active
- 2007-04-27 WO PCT/US2007/067633 patent/WO2007127922A1/en active Application Filing
- 2007-04-27 AT AT07761457T patent/ATE534994T1/de active
- 2007-04-27 US US11/741,647 patent/US7684262B2/en active Active
- 2007-04-27 TW TW096115098A patent/TWI433149B/zh active
- 2007-04-27 CN CNA200780015365XA patent/CN101432816A/zh active Pending
-
2010
- 2010-02-12 US US12/705,345 patent/US8077527B2/en active Active
-
2011
- 2011-11-08 US US13/291,360 patent/US8416633B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200809859A (en) | 2008-02-16 |
US20100232236A1 (en) | 2010-09-16 |
EP2022056A1 (de) | 2009-02-11 |
US7684262B2 (en) | 2010-03-23 |
CN101432816A (zh) | 2009-05-13 |
US8077527B2 (en) | 2011-12-13 |
EP2022056B1 (de) | 2011-11-23 |
WO2007127922A1 (en) | 2007-11-08 |
TWI433149B (zh) | 2014-04-01 |
TW201426745A (zh) | 2014-07-01 |
US8416633B2 (en) | 2013-04-09 |
US20070252623A1 (en) | 2007-11-01 |
US20120057416A1 (en) | 2012-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE534994T1 (de) | Sram-reststromreduktionsschaltung | |
CN103474093B (zh) | 控制灵敏放大器开启的追踪电路和采用追踪电路的sram | |
TW200617961A (en) | Multiport semiconductor memory device | |
TW200620317A (en) | Thermally stable reference voltage generator for MRAM | |
TW200802404A (en) | Volatile memory cell two-pass writing method | |
TW200713289A (en) | One time programmable memory and method of operation | |
US20140071745A1 (en) | Magnetoresistive memory device | |
HK1161415A1 (en) | Sram with different supply voltages for memory cells and access logic circuitry | |
TW200609940A (en) | Semiconductor integrated circuit device | |
WO2011130013A3 (en) | Multi-port memory having a variable number of used write ports | |
TW200514348A (en) | Differential amplifier and bit-line sense amplifier adopting the same | |
WO2007100626A3 (en) | Current driven memory cells having enhanced current and enhanced current symmetry | |
EP1603137A3 (de) | Program- und Löschverfahren für P-kanal ladungsabfangende Speicheranordnung | |
TW200735107A (en) | Memory devices including floating body transistor capacitorless memory cells and related methods | |
TW200723280A (en) | Resistive memory devices including selected reference memory cells and methods of operating the same | |
ATE534079T1 (de) | Halbleiterspeicher mit analoger übertragung von datenwerten | |
GB2457408A (en) | Sensing device for floating body cell memory and method thereof | |
DE602004015457D1 (de) | Nichtflüchtige, statische speicherzelle | |
DE60035115D1 (de) | Architketur, verfahren und schaltungen für speichervorrichtungen mit geringer leistungsaufnahme | |
TW200605073A (en) | Bit line sense amplifier and semiconductor memory device having the same | |
WO2004044916A3 (en) | Low standby power sram | |
TW200509131A (en) | Semiconductor memory device | |
WO2009088628A3 (en) | Static random access memory having cells with junction field effect and bipolar junction transistors | |
Wang et al. | Canary replica feedback for near-DRV standby V DD scaling in a 90nm SRAM | |
TW200641906A (en) | Method and apparatus for low voltage write in a static random access memory |