WO2020156181A1 - 表面处理铜箔及铜箔基板 - Google Patents
表面处理铜箔及铜箔基板 Download PDFInfo
- Publication number
- WO2020156181A1 WO2020156181A1 PCT/CN2020/072300 CN2020072300W WO2020156181A1 WO 2020156181 A1 WO2020156181 A1 WO 2020156181A1 CN 2020072300 W CN2020072300 W CN 2020072300W WO 2020156181 A1 WO2020156181 A1 WO 2020156181A1
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- WO
- WIPO (PCT)
- Prior art keywords
- copper foil
- treated
- layer
- treated copper
- treatment
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 186
- 239000011889 copper foil Substances 0.000 title claims abstract description 182
- 239000000758 substrate Substances 0.000 title claims description 27
- 239000011800 void material Substances 0.000 claims abstract description 66
- 239000010410 layer Substances 0.000 claims description 86
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 44
- 239000002335 surface treatment layer Substances 0.000 claims description 27
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 230000008054 signal transmission Effects 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 15
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000003792 electrolyte Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 238000005868 electrolysis reaction Methods 0.000 description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 230000002500 effect on skin Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- -1 3-acryloyl propyltrimethoxysilane (methacryloyl propyltrimethoxysilane) Chemical compound 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229920001661 Chitosan Polymers 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- YZTMWILIQIFIMY-UHFFFAOYSA-N 2-methyl-11-trimethoxysilylundec-1-en-3-one Chemical compound C(C(=C)C)(=O)CCCCCCCC[Si](OC)(OC)OC YZTMWILIQIFIMY-UHFFFAOYSA-N 0.000 description 1
- BVTACSRUXCUEHT-UHFFFAOYSA-N 2-methyl-6-triethoxysilylhex-1-en-3-one Chemical compound CCO[Si](OCC)(OCC)CCCC(=O)C(C)=C BVTACSRUXCUEHT-UHFFFAOYSA-N 0.000 description 1
- IHOYHKVQNJDASX-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS.CO[Si](OC)(OC)CCCS IHOYHKVQNJDASX-UHFFFAOYSA-N 0.000 description 1
- VTBHBNXGFPTBJL-UHFFFAOYSA-N 4-tert-butyl-1-sulfanylidene-2,6,7-trioxa-1$l^{5}-phosphabicyclo[2.2.2]octane Chemical compound C1OP2(=S)OCC1(C(C)(C)C)CO2 VTBHBNXGFPTBJL-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- JOIPGYAFSWSMAB-UHFFFAOYSA-N CCO[Si](OCC)(OCC)CCCOCC1CO1.CCO[Si](OCC)(OCC)CCCOCC1CO1 Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1.CCO[Si](OCC)(OCC)CCCOCC1CO1 JOIPGYAFSWSMAB-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229920001074 Tenite Polymers 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Chemical compound O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- YORDRIQOZVQDDY-UHFFFAOYSA-N sodium;3-(3-sulfopropylsulfanyl)propane-1-sulfonic acid Chemical compound [Na].[Na].OS(=O)(=O)CCCSCCCS(O)(=O)=O YORDRIQOZVQDDY-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- RXRIEAKKQPAUKB-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1.CO[Si](OC)(OC)CCCOCC1CO1 RXRIEAKKQPAUKB-UHFFFAOYSA-N 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/04—Electroplating: Baths therefor from solutions of chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/22—Electroplating: Baths therefor from solutions of zinc
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/16—Electroplating with layers of varying thickness
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0438—Processes of manufacture in general by electrochemical processing
- H01M4/0469—Electroforming a self-supporting electrode; Electroforming of powdered electrode material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/70—Carriers or collectors characterised by shape or form
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- Y10T428/12431—Foil or filament smaller than 6 mils
Definitions
- the present invention relates to the technical field of copper foil, in particular to a surface-treated copper foil and its copper foil substrate.
- the copper conductive lines of the copper foil substrate are carried by the insulating carrier, and through the layout design of the conductive lines, the electrical signals can be transmitted to the predetermined area along the predetermined path.
- the conductive lines of the copper foil substrate must also be further optimized to reduce the signal transmission caused by the skin effect (skin effect) Loss (signal transmission loss).
- the void volume (Vv) of the treated surface of the surface-treated copper foil to 0.1 to 1.0 ⁇ m 3 / ⁇ m 2 , and the maximum height (Sz) of the treated surface to 1.0 to 7.0 ⁇ m
- Vv void volume
- Sz maximum height
- FIG. 1 is a schematic cross-sectional view of a surface-treated copper foil according to an embodiment of the invention.
- FIG. 3 is a schematic diagram of a stripline according to an embodiment of the invention.
- FIG. 1 is a schematic cross-sectional view of a surface-treated copper foil according to an embodiment of the invention.
- the surface-treated copper foil 100 includes at least a treated surface 100A.
- the surface treated copper foil 100 according to an embodiment of the present invention further includes a main copper foil 110 and a surface treatment layer 112.
- the main copper foil 110 may be a rolled copper foil or an electrolytic copper foil, and its thickness is usually greater than or equal to 6 ⁇ m, for example, between 7-250 ⁇ m, or between 9 ⁇ m and 210 ⁇ m.
- the electrolytic copper foil can be formed by an electrodeposition (or called electrolysis, electrolytic deposition, or electroplating) process.
- the main copper foil 110 has two oppositely disposed first surface 110A and second surface 110B.
- the arithmetic average height (Ra) of at least one of the first surface 110A and the second surface 110B is 0.1 ⁇ to 0.4 ⁇ m, but it is not limited to this .
- the deposited side of the electrolytic copper foil may correspond to the first surface 110A of the main copper foil 110, and the roller surface of the electrolytic copper foil The drum side can correspond to the second surface 110B of the main copper foil 110, but is not limited to this.
- a surface treatment layer 112 may be provided on the first side 110A, and/or on the second side 110A.
- the surface 110B is provided with another surface treatment layer 112.
- the outer side surface of the surface-treated layer 112 can be regarded as the treated surface 100A of the surface-treated copper foil 100.
- the first side 110A and the second side 110B of the main copper foil 110 may be further provided with other single-layer or multi-layer structures, or surface treatment layers on the first side 110A and the second side 110B 112 can be replaced by other single-layer or multi-layer structures, or the first side 110A and the second side 110B are not provided with any layers, but it is not limited thereto. Therefore, in these embodiments, the processed surface 100A of the surface-treated copper foil 100 does not correspond to the outer surface of the surface-treated layer 112, but may correspond to the outer surface of other single-layer or multi-layer structures, or may correspond to To the first surface 110A and the second surface 110B of the main body copper foil 110, but it is not limited thereto.
- the aforementioned surface treatment layer 112 may be a single layer or a stacked layer including multiple sub-layers.
- each sub-layer may be selected from the group consisting of the roughening layer 114, the passivation layer 116, the anti-rust layer 118, and the coupling layer 120.
- the outer side surface of the surface treatment layer 112 can be regarded as the treatment surface 100A of the surface treatment copper foil 100. After the subsequent process of pressing the surface treatment copper foil 100 to the carrier board, the treatment surface 100A will contact the carrier board.
- the main copper foil 110 is a rolled copper foil
- the surface treatment layer 112 includes at least a roughened layer 114.
- the aforementioned roughened layer includes roughened particles (nodule).
- the roughened particles can be used to improve the surface roughness of the main copper foil, and they can be copper roughened particles or copper alloy roughened particles. Among them, in order to prevent the roughened particles from peeling off the main copper foil, a covering layer may be further provided on the roughened layer 114 to cover the roughened particles.
- the passivation layer may have the same or different composition, for example, a metal layer or a metal alloy layer.
- the aforementioned metal layer may be selected from but not limited to nickel, zinc, chromium, cobalt, molybdenum, iron, tin, and vanadium, for example: nickel layer, nickel-zinc alloy layer, zinc layer, zinc-tin alloy layer or chromium layer.
- the metal layer and the metal alloy layer may have a single-layer or multi-layer structure, such as a single layer containing zinc and nickel stacked on each other. In the case of a multi-layer structure, the stacking sequence between the layers can be adjusted according to requirements, and is not limited, for example, zinc-containing layer is laminated on nickel-containing layer, or nickel-containing layer is laminated on zinc-containing layer.
- the anti-rust layer is a coating layer applied to the metal, which can be used to prevent the metal from being corroded and degraded.
- the anti-rust layer contains metal or organic compounds.
- the aforementioned metal may be chromium or a chromium alloy, and the chromium alloy may further include one selected from nickel, zinc, cobalt, molybdenum, vanadium, and combinations thereof.
- the rust-preventing layer includes an organic compound
- the aforementioned organic compound may be selected from at least one of the group consisting of triazole, thiazole, imidazole and derivatives thereof.
- the coupling layer may be made of silane, which may be selected from but not limited to 3-aminopropyltriethoxysilane (APTES), N-2-(aminoethyl)-3-aminopropyltrimethyl N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, 3-glycidyloxypropyl triethoxysilane ((3-glycidyloxypropyl)triethoxysilane), 8-glycidyloxypropyltriethoxysilane, 8-glycidyloxypropyl triethoxysilane (8-glycidyloxyoctyl) trimethoxysilane, 3-methacryloyl propyltriethoxysilane, 8-methacryloyl octyltrimethoxysilane, 3-acryloyl propyltrimethoxysilane (methacryloyl propyltrimeth
- the surface roughness of the treatment surface of the surface treatment copper foil for example, void volume (void volume) , Vv, the unit is ⁇ m 3 / ⁇ m 2 , which means the void volume of the surface with a unit area of 1 ⁇ m 2 ), core void volume (Vvc, the unit is ⁇ m 3 / ⁇ m 2 , which means that the unit area is 1 ⁇ m
- the core void volume on the surface of 2 ), the valley void volume (dale void volume, Vvv, in ⁇ m 3 / ⁇ m 2 , which represents the valley void volume of the surface with a unit area of 1 ⁇ m 2 ), and the maximum The height (maximum height, Sz), etc. is mainly affected by the roughening layer.
- FIG. 2 is a diagram of the relationship between the surface height and the material ratio (mr) of the surface-treated copper foil of an embodiment of the present invention.
- the calculation of the void volume (Vv) 202 is to integrate the volume of the void enclosed above the curve and below the horizontal cutting line, where the horizontal cutting line is the height corresponding to the curve when the load rate is P1.
- the void volume (Vv) 202 is the range surrounded by the height level line where the load factor (mr) is P1 (10%) to the upper part of the curve in the interval where the load factor (mr) is 100%.
- the void volume (Vv) 202 is the sum of the valley void volume (Vvv) 202A and the core void volume (Vvc) 202B.
- the calculation of the valley void volume (Vvv) 202A is to integrate the volume of the void enclosed above the curve and below another horizontal cutting line, where the position of the other horizontal cutting line is the load rate of the curve (mr) is the height corresponding to P2; and the core void volume (Vvc) 202B is calculated by integrating the curve and the volume of the void enclosed by two horizontal cutting lines, where the position of the two horizontal cutting lines is the curve The corresponding height when the load factor (mr) is P1 and P2 respectively.
- the void volume (Vv) referred to in the present invention is the value calculated when P1 of the load rate (mr) is 10%, and the valley void volume (Vvv) is the load rate (mr). ) Is the value calculated when P2 is 80%, and the core void volume (Vvc) is the value calculated when P1 and P2 of the load factor (mr) are 10% and 80%, respectively.
- the void volume (Vv) of the treatment surface 100A is 0.1 to 1.0 ⁇ m 3 / ⁇ m 2 , preferably 0.1 to 0.7 ⁇ m 3 / ⁇ m 2 .
- the void volume (Vv) is the sum of the valley void volume (Vvv) and the core void volume (Vvc).
- the core void volume (Vvc) is preferably 0.08 ⁇ 0.84 ⁇ m 3 / ⁇ m 2
- the valley void volume (Vvv) is preferably 0.01-0.07 ⁇ m 3 / ⁇ m 2 .
- the maximum height (Sz) is the sum of the maximum peak height and the maximum valley depth in the defined range.
- the maximum height (Sz) of the treatment surface 100A is 1.0 to 7.0 ⁇ m, preferably 1.2 to 7.0 ⁇ m.
- the surface-treated copper foil 100 and the contacting carrier can simultaneously meet high peel strength (for example, higher than or equal to 0.40N/mm) and low signal transmission loss (the absolute value of signal transmission loss is less than Or equal to 25dB/m) demand.
- the signal transmission loss can be further improved by controlling the sum of the oxygen content and hydrogen content, or the amount of nickel adhesion.
- the sum of the oxygen content and the hydrogen content of the surface-treated copper foil 100 is less than or equal to 300 ppm, preferably 40 to 300 ppm.
- the amount of nickel deposited on the treated surface 100A is 40 to 200 ⁇ g/dm 2 , preferably 40 to 120 ⁇ g/dm 2 .
- the various embodiments of the present invention by controlling the surface roughness parameters of the treated surface of the surface-treated copper foil, such as: void volume (Vv) and maximum height (Sz), for the corresponding copper foil substrate and printed circuit board
- Vv void volume
- Sz maximum height
- the aforementioned surface-treated copper foil can be further processed into a copper foil substrate or a printed circuit board.
- the copper foil substrate at least includes a carrier board and a main body copper foil.
- the inner copper foil is arranged on at least one surface of the carrier board and includes a processing surface. Among them, the treated surface of the surface-treated copper foil faces and directly contacts the carrier board.
- the above-mentioned carrier board can be bakelite, polymer board, or glass fiber board, but it is not limited thereto.
- the polymer components of the polymer board can be exemplified as: epoxy resin, phenolic resin, polyester resin, polyimide resin, acrylic (acrylics), formaldehyde resins (formaldehyde resins), bismaleimide triazine resins (also known as BT resins), cyanate ester resins, fluoropolymers, poly Polyether sulfone, cellulosic thermoplastics, polycarbonate, polyolefins, polypropylene, polysulfide, polyurethane, polyamide Imine resin (polyimide), liquid crystal polymer (Liquid Crystal Polymer, LCP), polyphenylene oxide (PPO).
- the above-mentioned glass fiber board may be a prepreg formed by immersing glass fiber non-woven material in the aforementioned polymer (such as epoxy resin).
- Step A is implemented to provide the main body copper foil.
- the main copper foil is an electrolytic copper foil
- a foil making machine can be used to form the electrolytic copper foil by means of electrodeposition, or it is called a bare copper foil.
- the foil making machine may at least include a roller as a cathode, a pair of insoluble metal anode plates, and an electrolyte inlet manifold.
- the roller is a rotatable metal roller whose surface is a mirror-polished surface.
- the metal anode plates can be respectively fixed on the lower half of the roller to surround the lower half of the roller.
- the feed pipe can be fixed directly under the roller and located between the two metal anode plates.
- the electrolyte feed pipe will continuously provide electrolyte between the roller and the metal anode plate.
- copper can be electrolytically deposited on the roller to form an electrolytic copper foil.
- continuous electrolytic copper foil can be produced.
- the surface of the electrolytic copper foil facing the roller can be referred to as the roller surface
- the surface of the electrolytic copper foil away from the roller can be referred to as the deposition surface.
- the generated hydrogen and oxygen can be adjusted by adjusting the type or surface shape of the roller, the composition of the plating solution, the distance between the roller and the metal anode plate, and the distance between the periphery of the electrolyte inlet pipe and the metal anode plate. Be controlled.
- This step B is to perform a surface cleaning process on the above-mentioned main copper foil to ensure that the surface of the copper foil does not have contaminants (such as oil stains, oxides), and the manufacturing parameter ranges are exemplified as follows:
- a roughened layer is formed on the surface of the main copper foil.
- Electrolytic deposition can be used to form a roughened layer on a certain surface of the copper foil, such as a roller surface or a deposition surface.
- the roughened layer may include roughened particles (nodule). Examples of manufacturing parameter ranges are as follows:
- a passivation layer is formed on at least one surface of the copper foil.
- the passivation layer can be formed by an electrolytic deposition process.
- a two-layer stack structure composed of nickel and zinc is exemplified.
- the manufacturing parameter range is exemplified as follows:
- an anti-rust layer such as a chromium-containing layer, is formed on the above-mentioned copper foil.
- the manufacturing parameter range is illustrated as follows:
- This step G is to form a coupling layer on the side of the copper foil where the roughened layer is provided.
- the copper foil is washed with water, but the surface of the copper foil is not dried.
- the aqueous solution containing the silane coupling agent is sprayed onto the anti-rust layer on the side of the copper foil provided with the roughened layer, so that the silane coupling agent is adsorbed on the surface of the passivation layer.
- the copper foil can be placed in an oven to be dried. Examples of manufacturing parameter ranges are as follows:
- Silane coupling agent (3-aminopropyltriethoxysilane)
- Objective lens magnification 100 times objective lens (MPLAPON-100x LEXT, Olympus)
- Objective lens magnification 100 times objective lens (MPLAPON-100x LEXT, Olympus)
- the side of the surface-treated copper foil that is not provided with a surface treatment layer will be covered by a protective layer.
- the composition of the protective layer is nylon ( polyamide). Then put the sample in a petri dish, and soak the sample with 20ml of 18% HCl solution at room temperature (25°C) for 10 minutes. After the nickel in the surface treatment layer of the surface-treated copper foil is completely dissolved, the solution is poured into a 50 ml quantitative bottle. Subsequently, the petri dish is rinsed with water and collected in a quantitative flask, so that the solution in the quantitative flask reaches a predetermined volume.
- the strip line 300 may further include two ground electrodes 306-1 and a ground electrode 306-2, which are respectively disposed on opposite sides of the resin carrier 304.
- the ground electrode 306-1 and the ground electrode 306-2 may be electrically connected to each other through conductive vias, so that the ground electrode 306-1 and the ground electrode 306-2 have the same potential.
- a signal analyzer PNA N5230C network analyzer, Agilent
- Agilent a signal analyzer
- the output value of the other end of 302 is used to determine the signal transmission loss generated by the strip line 300.
- the specific measurement conditions are as follows: the frequency of the electrical signal is 200MHz to 15GHz, the number of sweeps is 6401 points, and the calibration method is TRL.
- the degree of signal transmission loss of the corresponding strip line is judged, and the detection results are recorded in Table 2.
- the absolute value of the signal transmission loss is smaller, it means that the signal loss degree is less during transmission.
- the absolute value of signal transmission loss is greater than 25dB/m, it represents poor signal transmission performance; when the absolute value of signal transmission loss is less than or equal to 25dB/m, it represents good signal transmission performance; and when the signal transmission loss is When the absolute value is less than 23dB/m, it represents the best signal transmission performance.
- the surface-treated copper foil can have better heat resistance.
- the deposition amount of nickel was 40 ⁇ 120 ⁇ g / dm 2
- the signal transmission loss can be further reduced to less than the absolute value of 20.1dB / m.
- the various embodiments of the present invention by controlling the surface roughness parameter of the treated surface of the surface-treated copper foil, the sum of the hydrogen content and oxygen content of the surface-treated copper foil, or the nickel adhesion amount on the treated surface, for the corresponding copper foil substrate and printed circuit board, in addition to improving the adhesion between the surface-treated copper foil and the carrier, it can also reduce the signal transmission loss generated when high-frequency electrical signals are transmitted in the conductive pattern.
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- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (15)
- 一种表面处理铜箔,其特征在于,包括一处理面,其中所述处理面的空隙体积为0.1至1.0μm 3/μm 2,且所述处理面的最大高度为1.0至7.0μm。
- 如权利要求1所述的表面处理铜箔,其特征在于,其中所述处理面的空隙体积为0.1至0.7μm 3/μm 2。
- 如权利要求1所述的表面处理铜箔,其特征在于,其中所述处理面的最大高度为1.2至7.0μm。
- 如权利要求1所述的表面处理铜箔,其特征在于,其中所述处理面的核心部空隙体积为0.08至0.84μm 3/μm 2。
- 如权利要求1所述的表面处理铜箔,其特征在于,其中所述处理面的波谷部空隙体积为0.01至0.07μm 3/μm 2。
- 如权利要求1所述的表面处理铜箔,其特征在于,其中所述处理面的镍附着量为40至200μg/dm 2。
- 如权利要求6所述的表面处理铜箔,其特征在于,其中所述处理面的镍附着量为40至120μg/dm 2。
- 如权利要求1所述的表面处理铜箔,其特征在于,其中所述表面处理铜箔的含氧量及含氢量的总和小于或等于300ppm。
- 如权利要求8所述的表面处理铜箔,其特征在于,其中所述表面处理铜箔的含氧量及含氢量的总为40至300ppm。
- 如权利要求1至9中任一项所述的表面处理铜箔,其特征在于,进一步包括:一主体铜箔;以及一表面处理层,设置于所述主体铜箔的至少一表面,其中所述表面处理层的最外侧为所述处理面。
- 如权利要求10所述的表面处理铜箔,其特征在于,其中所述主体铜箔为电解铜箔,所述表面处理层包括一子层,所述子层为粗化层。
- 如权利要求11所述的表面处理铜箔,其特征在于,其中所述表面处理层还进一步包括至少一个其他的子层,所述至少一个其他的子层选自由钝化层及耦合层所构成的群组。
- 如权利要求12所述的表面处理铜箔,其特征在于,其中所述钝化层包含至少一金属,所述金属选自由镍、锌、铬、钴、钼、铁、锡、及钒所构成的群组。
- 一种铜箔基板,其特征在于,包括:一载板;以及一表面处理铜箔,设置于所述载板的至少一表面,其中所述表面处理铜箔包括:一主体铜箔;以及一表面处理层,设置在所述主体铜箔和所述载板之间,其中所述表面处理层包括面向所述载板的一处理面,且所述处理面的空隙体积为0.1至1.0μm 3/μm 2,且所述处理面的最大高度为1.0至7.0μm。
- 如权利要求14所述的铜箔基板,其特征在于,其中所述表面处理层的所述处理面直接接触所述载板。
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JP2021500102A JP7065250B2 (ja) | 2019-02-01 | 2020-01-15 | 表面処理銅箔及び銅箔基板 |
CN202080002025.9A CN111937197B (zh) | 2019-02-01 | 2020-01-15 | 表面处理铜箔及铜箔基板 |
KR1020207037996A KR102567837B1 (ko) | 2019-02-01 | 2020-01-15 | 표면 처리된 동박 및 동박 기판 |
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US201962800263P | 2019-02-01 | 2019-02-01 | |
US62/800,263 | 2019-02-01 | ||
US16/694,412 | 2019-11-25 | ||
US16/694,412 US10787751B2 (en) | 2019-02-01 | 2019-11-25 | Electrolytic copper foil with low profile |
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