TWI435941B - 基材處理室用的套組和靶材 - Google Patents
基材處理室用的套組和靶材 Download PDFInfo
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Description
本發明實施例涉及用於基材處理室的處理套組和靶材。
在處理諸如半導體晶圓和顯示器的基材的過程中，將基材放置在處理室中並設定處理室中的處理條件，以在該基材上沈積或者蝕刻材料。典型的處理室包括多個室構件(chamber component)，其包括圈圍出處理區的圍牆壁、用於在室內提供氣體的氣源、對處理氣體施加能量以處理基材的氣體激發器(gas energizer)、用於固持基材的基材支撐件，以及去除廢氣並保持室內氣壓的排氣裝置。此類處理室可以包括CVD、PVD和蝕刻室。在PVD室中，濺鍍靶材以促使被濺擊出的靶材料沈積在面對靶材的基材上。在濺鍍製程中，將惰性氣體或者反應氣體提供到處理室內，通常對靶材施加電偏壓，並且使基材保持某一浮動電壓，從而在室內產生導致靶材濺鍍的電漿。
PVD室可以包括一處理套組，該處理套組含有多個室構件，將該等室構件設置在基材支撐件處以減少在內室壁或者其他區域上沈積PVD形成物。例如，典型的PVD室處理套組可以包括沈積環、覆蓋環和/或遮蔽環，這些環均位於基材的周圍。設置不同的環結構來接收濺鍍沈積，否則這些沈積物將會聚集在支撐件的側面或者基材的暴露背面上。該處理套組還可以包括多個室護板和內襯，其藉著作為一容納表面(receiving surface)來接收PVD濺鍍沈積物從而保護室側壁，否則這些沈積物會沈積在室的側壁上。這些處理套組構件還減少了在所述表面上的濺鍍沈積物的累積，否則最終這些沈積物將會脫落從而形成沈積在基材上的污染顆粒。所述套組構件還可以藉著能量化的電漿來減少處理室內結構的腐蝕。同時為了清洗累積的沈積物，還可以將這些套組構件設計為方便拆卸的形式。在經過成批基材處理後，例如，處理1000個基材後，通常移除所述處理套組構件，並使用包括諸如氫氟酸(HF)和硝酸(HNO3
)的酸性溶液清洗該等構件，以去除在製程循環期間累積在套組構件上的濺鍍沈積物。
故，希望存在一種處理套組，其包含多個彼此之間係造型且設置成可減少室內壁上形成濺鍍沈積物之量的構件。減少累積沈積物允許在不必關機或拆解處理室以進行清洗的情況下，可在該室中連續處理更大量的基材。每次該室需要清洗時，其造成的停機時間提高了基材的處理成本。因此，人們希望在不關掉處理室以清洗其內表面的情況下，使操作該室在基材上沈積濺鍍材料的時間量達到最大。
而且，在某些PVD製程中，諸如鋁PVD製程，濺鍍鋁沈積物在累積於圍繞在基材周圍的各種沈積環、覆蓋環和其他環之間的間隙中，並且還形成在基材的背面上。所累積的濺鍍沈積物導致基材粘在沈積環上，並當試圖從支撐件上移除基材時導致基材損傷。希望存在一種可以減少基材背面沈積以及支撐件側面沈積情形的環，並且在該環上不會累積導致基材粘結在環上的沈積物。同時還希望當從支撐件上提升基材時能防止部分粘連的沈積環隨著基材一起升高，從而減少對基材和/或沈積環的損傷。
另一個問題是當圍繞基材的內襯和護板(shield)會因暴露在室內的濺鍍電漿中而升溫。通常，在處理室的低壓環境中，內襯和護板無法和其周圍的室構件交換足夠的熱量以將這些構件的溫度降低到可接受的程度。由於該等構件的熱膨脹作用產生熱應力，而造成在完成製程循環後護板和內襯上形成的濺鍍沈積物發生剝落或散裂情形，因此該等構件上過量的熱量是不利的。因此，在處理基材的過程中希望護板和內襯保持在較低的溫度。
根據本發明的一態樣，本發明提供一種在基材處理室中位於基材支撐件周圍的沈積環，在該處理室中形成一處理氣體的電漿以處理基材，該支撐件包括一終止於該基材懸伸邊前的外壁，並且該沈積環包括：(a)一環形帶，圍繞著該支撐件的外壁，該環形帶包括：(i)一從該環形帶橫向延伸出的內唇，其實質上與該支撐件的該外壁平行，並且終止於該基材懸伸邊的下方；(ii)一凸脊；(iii)一內部開口通道，其位於該內唇和該凸脊之間，並至少部分沿伸於該基材的懸伸邊的下方；以及(iv)一該凸脊之徑向向外的壁架。
根據本發明另一態樣，本發明提供一種蓋環，用以至少部分覆蓋一具有一凸脊和一內部開口通道的沈積環；在一基材處理室中該蓋環和該沈積環位於基材支撐件的周圍；在該基材處理室形成一處理氣體的電漿以處理該基材；該支撐件包括一外壁，其終止於該基材之懸伸邊前，並且該蓋環包括：(a)一環形楔，其包括一底腳與一傾斜表面，該底腳位於該沈積環的一凸脊上，以及該傾斜表面係朝一位在該沈積環之內部開口通道上的突出邊緣逐漸變細；以及(b)一個或多個圓柱形壁，其從該環形楔向下延伸。
根據本發明再一態樣，本發明提供一種在基材處理室中位於一基材支撐件周圍的環組件，在該基材處理室中形成一處理氣體電漿以處理該基材，該支撐件包括終止於該基材懸伸邊之前的一外壁，並且該環組件包括：(a)一環形帶，圍繞該支撐件外壁，該環形帶包括：(i)一從該環形帶橫向延伸的內唇，該內唇實質上與該支撐件的外壁平行，並且終止於該基材懸伸邊的下方；(ii)一凸脊；(iii)一內部開口通道，其位於該內唇和該凸脊之間，並至少部分延伸於該基材的該懸伸邊下方；(iv)一從該凸脊徑向向外的壁架；以及(b)一蓋環，其至少部分覆蓋該沈積環，該蓋環包括：(i)一環形楔，其包括一底腳與一傾斜表面，該底腳位於該沈積環的該凸脊上，以及該傾斜表面係朝位在該沈積環之該內部開口通道上的一突出邊緣逐漸變細；以及(ii)一個或多個從該環形楔向下延伸的圓柱形壁，從而該凸脊和該蓋環定義出一彎曲間隙，該彎曲間隙阻止電漿物種通過該間隙。
根據本發明一態樣，本發明提供一種在基材處理室中用以在一基材支撐件周圍固定一沈積環的固定組件，該沈積環包括具有一固定柱的一周邊凹槽，並且該固定組件包括：(a)一包括兩端的限制樑，該限制樑能與該基材支撐件連接；(b)一防升托架，該防升托架包括：(i)一塊件(block)，其包括一直通通道，用於容納一限制樑的一端；(ii)一固定環，其連接至該塊件，該固定環的尺寸係設計成使其在該沈積環之該周邊凹槽中的該固定柱上滑動，從而，在使用時，該直通通道在限制樑上滑動使得該固定環環繞該固定柱，該固定柱允許該塊件的重量穩定地將該沈積環固定至支撐件。
根據本發明一態樣，本發明提供一種整體護板，其在基材處理室中能圍繞一面對著一基材支撐件之濺鍍靶材的濺鍍表面，以減少沈積在該支撐件和該處理室側壁上的濺鍍沈積物，該護板包括：(a)一圓柱形外部帶，其具有圍繞該濺鍍靶材之濺鍍表面和該基材支撐件的直徑尺寸，該外部帶具有頂端和底端，該頂端具有鄰近該濺鍍靶材的一徑向向外變細表面；(b)一底板，從該外部帶的底端徑向向內延伸；以及(c)一圓錐形內部帶，其與該底板接合並且至少部分圍繞該基材支撐件的周邊邊緣。
根據本發明一態樣，本發明提供一種用於在基材處理室中冷卻一圓柱形護板的熱交換器，該熱交換器包括：(a)一板，其包含一內周，該內周包括一尺寸適於圍繞一圓柱形護板的圓孔；以及(b)一位於所述板中的多邊形導管，用以使熱交換流體流過該多邊形導管，該多邊形導管包括多個分支，該等分支互相連接成一多邊形圖案圍繞著該圓孔，並且該多邊形導管包括一入口和一出口。
根據本發明一態樣，本發明提供一種在基材處理室中可以安裝在一護板內以及位於一隔離器上的濺鍍靶材，該濺鍍靶材包括：(a)一濺鍍板，其係由欲濺鍍到該基材上的一濺鍍材料所構成，該濺鍍板包括一傾斜邊緣；(b)一背板，用於支撐該濺鍍板，該背板包括一周邊突出部分，該周邊突出部份延伸超出該濺鍍板的該傾斜邊緣，該周邊突出部分包括一底腳與一內部凸起，該底腳位在該室中的該隔離器上，以及該內部凸起的形狀與大小係經設計以減少沈積在該隔離器和該護板上的濺鍍沈積物。
根據本發明一態樣，本發明提供一種處理套組，用於在一基材處理室中圍繞一面對著基材支撐件的濺鍍靶材之濺鍍表面，以減少沈積在該支撐件和該處理室側壁上的濺鍍沈積物，該支撐件包括一外壁與一限制樑，該外壁終止於該基材之懸伸邊的下方，該處理套組包括：(a)一沉積環，其包括一圍繞該支撐件的環形帶，該沈積環具有一從該環形帶橫向延伸出的內唇，該內唇實質上平行於該支撐件的外壁且終止於該基材之懸伸邊的下方；一凸脊；一內部開口通道，其位於該內唇和該凸脊之間，並且該內部開口通道至少部分沿於該基材之懸伸邊的下方；一沿該凸脊徑向向外的壁架；以及一周邊凹槽，其具有一固定柱；(b)一蓋環，其至少部分覆蓋該沈積環，該蓋環包括一環形楔，該環形楔包括一底腳與一傾斜表面，該底腳位於該沈積環的該凸脊上，以及該傾斜表面係朝位在該沈積環之該內部開口通道上的一突出邊緣漸漸變細；以及一個或多個從環形楔向下延伸的圓柱形壁；以及(c)一防升托架，其包括一塊件，該塊件包含一直通通道與一固定環，該直通通道係用於容納該支撐件之限制樑的一端，並且該固定環的尺寸設計成使其能在該沈積環的該周邊凹槽中的該固定柱上滑動。
適用的處理室100的實施例可以處理第1圖所示的基材104。處理室100包括包圍一處理區域106的多個包圍壁108，該等包圍壁108包括側壁116、底壁120和頂壁124。處理室100可以是藉由機械手臂而使多個腔室互相連接的多室平臺(未示出)中的一部分，其中所述機械手機械裝置可以在多個室106之間傳輸基材104。在所示的實施例中，處理室100包括濺鍍沈積室，亦可稱為物理汽相沈積或PVD室，其可以在基材104上濺鍍沈積一或多種材料，諸如鉭、氮化鉭、鈦、氮化鈦、銅、鎢、氮化鎢和鋁。
處理室100包括一用於支撐基材104的基材支撐件130，該支撐件包括底座134。底座134具有在製程期間承載並支撐基材104的基材容納表面，並可能包括一靜電卡盤和一加熱器，諸如電阻式加熱器或熱交換器(未示出)。在操作中，通過位於室100的側壁上的基材載入入口，將基材104引入室100中並置於基材支撐件130上。在支撐件130上定位基材104的過程中，可藉由支撐件提升風箱(support lift bellows)來提升或降低支撐件130和/或採用一升降指狀組件在支撐件130上提升或者降低基材。在電漿操作期間，底座134保持在電浮動電位或接地狀態。
處理室100還包括一濺鍍靶材140，該濺鍍靶材140的濺鍍表面係面向基材104，濺鍍靶材140含有欲濺鍍到基材104上的材料。靶材140藉著一般由介電材料或絕緣材料所組成的隔離器144而與處理室100電性絕緣。靶材140連接至一靶材功率源148，該靶材功率源140係相對於位於處理室構件之壁前方的護板150和/或電性浮動的支撐件130地對靶材140施加偏壓。連接至該靶材功率源148的靶材140、護板150、支撐件130和其他處理室構件係作為氣體激發器(gas energizer)152以形成濺鍍氣體電漿。氣體激發器152還可包括源線圈(source coil)153，其利用通過該線圈的電流在處理室100中產生電漿。所產生的電漿激烈地撞擊並轟擊靶材140的濺鍍表面142，以將表面142的材料濺鍍到基材104上。
透過送氣系統160提供來自氣源162的氣體流經具有諸如質量流量控制器等氣流控制閥166的導管164，使得氣體以設定的流速通過導管164，而將濺鍍氣體通入處理室100中。使氣體送入一混合歧管(也未示出)，在該混合歧管中使該等氣體混合以形成所需的處理氣體組合物並送入處理室100中具有多個氣體出口的氣體分佈器168。製程氣體可包括諸如氬氣或氙氣等非反應性氣體，其能激發地撞擊並濺鍍靶材。製程氣體也可包括諸如一種或多種含氧氣體和含氮氣體等反應氣體，其能與濺鍍材料反應以形成基材104上的膜層。消耗過的製程氣體和副產品通過具有一排氣口172的排氣系統170從處理室100排出，該排氣口接收消耗過的製程氣體並使該消耗過的製程氣體通入具有節流閥176的排氣導管174中，以控制處理室100內的氣壓。該排氣導管174連接一個或多個泵178。一般地，處理室中濺鍍氣體的氣壓設定在諸如真空環境等低於大氣壓的水平，例如1 mTorr到400 mTorr的氣壓。
藉由具有數組指令之程式碼的控制器180來控制處理室100，以便操作處理室100的構件在處理室100中處理基材104。例如，控制器180可包含程式碼，該程式碼包括：一組基材定位指令，以操作基材支撐件130以及執行基材傳送；一組氣流控制指令，以操作氣流控制閥設定進入處理室100的濺鍍氣體的氣流；一組氣壓控制指令，以操作排氣節流閥保持處理室100中的氣壓；一組氣體激發器控制指令，以操作氣體激發器設定氣體激發功率值；一組溫度控制指令，以控制溫度控制系統設定處理室100中不同構件的溫度；以及一組處理監控指令，以監控處理室100中的製程。
處理室包括製程套組200，製程套組200包括數種便於從處理室100上移除的不同構件，例如為了清除構件表面的濺鍍沈積物、替換或修理腐蝕的構件或者使處理室用於其他製程等等。在一實施例中，製程套組200包括一環組件202，用於設置在基材支撐件130的外壁(peripheral wall)204的周圍，該基材支撐件130終止於基材的懸伸邊206之前。環組件202包括一沈積環208和一蓋環212，該沈積環208和蓋環212互相結合用於減少在支撐件130的外壁204或基材104的懸伸邊206上形成濺鍍沈積物。
如第2圖和第3圖中所示沈積環208包括一環狀帶(annular band)216，其沿著至環繞支撐件130的外壁204而延伸。環狀帶216包括一內唇218，該內唇218從該環狀帶橫向延伸出並實質上平行於基材130的外壁204。內唇218終止在基材104之懸伸邊206的正下方。內唇218定義出該沈積環208的內周長，該沈積環208包圍著基材104和支撐件130的周邊周長，以在製程期間保護沒有被基材104覆蓋的支撐件130的區域。例如，內唇218包圍並至少部分覆蓋支撐件130的外壁204，以減少或甚至完全阻止沉積在外壁204上濺鍍沈積物，否則支撐件130的外壁204將暴露在製程環境中。有利地，沈積環208能容易地移除以將濺鍍沈積物從暴露出來的環表面上清除掉，從而無需將支撐件130拆卸下來清洗。沈積環208還可用於保護支撐件130的暴露側表面，以降低激發電漿物種對側表面的腐蝕。沈積環208通常由諸如不銹鋼或鋁等金屬所形成，或可由諸如氧化鋁等陶瓷材料所組成。
在如第2圖和第3圖所示的實施例中，沈積環208的環狀帶216具有一凸脊224，其沿著環狀帶216的中心部分延伸。凸脊224具有一平坦頂面228，該頂面228與蓋環212間隔開來，而在兩者之間形成一彎曲間隙(convoluted gap)229以作為汽封迴廊(labyrinth)，減少多種電漿物種穿過彎曲間隙。一開口內管(open inner channel)230位於內唇218和凸脊224之間。該開口內管230徑向向內延伸並至少部分終止於基材104的懸伸邊206下方。內管230具有一與內唇218聯結的第一圓角232和一與凸脊224聯結的和緩傾斜表面234。平滑角232和傾斜表面234有助於在清潔沈積環208的期間，從這些部分上移除濺鍍沈積物。沈積環208還具有一壁架(ladge)236，其位於凸脊224的徑向向外處並用於支撐蓋環212。另外，U型槽237設置在凸脊224和壁架236之間，以在兩者之間形成彎曲通道，進一步防止電漿或氣態物種流經該通道，從而減少製程沈積物沉積在該通道的徑向向外的區域中。因此沈積環的形狀和輪廓係設計成可減少通過這些區域的製程沈積物。不同于習知技術的設計，由於本發明在將基材傳送至處理室中的過程中可在處理室中準確定位基材，因此即使在基材104滑動或在處理室100中基材放置錯誤的情況下，在沈積環208中也不需要用銷(pins)來固定基材104。
環組件202的蓋環212包圍並至少部分覆蓋沈積環208以接收沈積環208，並因此為沈積環208阻擋住大量濺鍍沈積物。蓋環212由能抗濺鍍電漿腐蝕的材料所構成，例如不銹鋼、鈦或鋁等金屬材料或諸如氧化鋁等陶瓷材料所組成。在一種實施例中，蓋環212由鈦所製造。蓋環212包括一具有底腳246的環形楔244，該底腳246位於沈積環208的壁架236上以支撐蓋環212。底腳246從環形楔244向下延伸以抵靠在沈積環208上，且實質上不會壓裂或損壞沉積環208。
蓋環212的環形楔244具有一傾斜表面248，其作為用以將濺鍍電漿容納在靶材和支撐件130間之製程區內的邊界。傾斜表面248具有一光滑且連續的表面，濺鍍沈積物可沈積在該光滑且連續的表面上並易於除去。在一實施例中，該傾斜表面248相對于一軸成一角度，該軸垂直於由基材104的處理表面形成的平面。在一實施例中，該角度至少約為60°，甚至可以約為65°到約85°，或甚至約80°。蓋環212之傾斜表面的角度設計成能使最接近基材104之懸伸邊206的濺鍍沈積物堆積量降至最少，否則將對整個基材104的沉積均勻度造成負面影響。
該環形楔244朝突出邊緣252處逐漸變細，該突出邊緣252覆蓋在沈積環208的內管230上。該突出邊緣252的末端為圓形邊緣256並具有一平坦底表面268。突出邊緣252減少濺鍍沈積物沈積在沈積環208的開口內管上。較佳地，突出邊緣252突出的長度至少約為沈積環208之開口內管寬度的一半。例如，如果內管230寬度約12毫米(mm)，突出邊緣252的寬度至少約為6毫米。突出邊緣252延伸在沈積環208的開口內管230上方，以更接近基材的圓周邊(peripheral edge)206，從而覆蓋沈積環208的開口內管230的一部分。另外，突出邊緣252具有一凸脊253，該凸脊253的外形輪廓係與沈積環208下表面234的形狀相匹配並順服接合。這種經造型且非常匹配的特徵可阻止濺鍍沈積物沈積在基材的圓周懸伸邊206上，亦可減少沈積物沉積在支撐件130的外壁(peripheral walls)204上。藉著限制多種氣態電漿物種的流動和外邊緣204上濺鍍沈積物，亦可迫使沈積作用發生在該開口內管230的表面。因此，突出邊緣252的輪廓經過大小設計、造型與位置設置，以與沈積環208的開口內管230合作且互補地在蓋環212和沈積環208之間形成迴旋且狹窄的流動通道，以阻止外邊204上製程沈積物的流動。該狹窄的流動通道還限制了低能量濺鍍沈積物堆積在沈積環208和蓋環212的配對面上，否則將使沈積環208和蓋環212彼此粘接在一起或粘附到基材104的懸伸邊206上。延伸在基材懸伸邊206下方的蓋環212之開口內管230係設計成可與來自蓋環208之突出邊緣252的阻擋相結合，以在鋁濺鍍處理室100中收集例如最小量3900微米(μm)的鋁濺鍍沈積物，同時減少或甚至實質上排除濺鍍沈積物沉積在兩個環208、212的配對面上。
蓋環212還具有一對圓柱形壁260，其從環形楔244向下延伸。該等圓柱形壁260位於環形楔244的底腳246徑向向外處。圓柱形壁260包括內壁260a和外壁260b，內壁260a的高度小於外壁260b的高度。內壁260a的徑向內表面262為傾斜的，以配合沈積環208的徑向外表面264的傾斜角而形成另一彎曲通道266，該彎曲通道266可阻止電漿物種進入周圍區域和對周圍區域放電。一般地，外壁260a的高度至少約為內壁260b高度的1.2倍。例如，對於內徑約154毫米的蓋環212，其外壁160a的高度約25毫米，以及內壁的高度約19 mm。
在另一實施例中，如第3－6圖中所示，製程套組200還包括一防升托架270，用於在處理室100內將沈積環208固定在基材支撐件130的周邊。防升托架270與沈積環208和支撐件130的附加結構特徵共同合作。例如，沈積環208包括兩個周邊凹槽274，該等凹槽274具有從槽274伸出的多個固定柱，以在每一側固定一對防升托架270，第5圖中顯示出其中一側。一對凹槽沿直徑彼此相對地設置於支撐件130上。在該實施例中，如第4A和4B圖中所示，限制樑280也裝配在支撐件130的背面276以固定防升托架270。該限制樑280包括兩個相對的平插腳282a、282b，其在支撐件130的背面276中從圓環284徑向向外周邊延伸出。兩個相對的平插腳282a、282b裝配在垂直臂286a、286b上，該等垂直臂286a與286b連接至圓環284。圓環284的形狀和大小係適合安裝在支撐件背面中的凹槽287內。
如第5和6圖中所示，防升托架270包括塊件(block)290，該塊件290包含一直通通道294，直通通道294係用來接受該限制樑280的插腳端282a。直通通道294包括一橢圓形孔296，其尺寸大於限制樑280的插腳282a。連接於塊件290上的固定環298其尺寸係設計成能在沈積環208之凹槽274的固定柱278上方移動。在組裝過程中，如第5圖中所示，防升托架270係沿著沈積環208的外圓周周邊設置，並且如箭頭283所示般地將該直通通道294的孔296滑入限制樑280的插腳282上，使得固定環298的進入孔299位在固定柱278的正上方。接著如第6圖所示，如箭頭285所示般地降低該防升托架270，從而固定環298下降並包圍該固定柱278，以使托架270之塊件290的重量穩固地托住沈積環208。當沈積環208向上拉時，例如當沈積環粘附於基材104上時，防升托架270僅接觸該限制支撐件280。這種設計可使正常使用情形中陶瓷沈積環208和蓋環212上的熱應變和機械應變減至最小。
如第7和8圖中係顯示含有升托架270之組件的另一實施例，該防升托架270用於在處理室100中沿著基材支撐件130的周邊固定沈積環208。在此實施例中，防升托架270連接至一陶瓷隔離器400，該陶瓷絕緣體400接著耦合至限制樑280的平插腳282a、282b。防升托架270滑動至壁架402上，該壁架由陶瓷隔離器400的塊件404向外延伸。陶瓷隔離器400係藉著在支撐件130和沈積環208之間的電路中提供一絕緣元件，以使該限制樑280與其他構件電性絕緣。當沈積環208由金屬組成時，切斷電路用於降低這兩個結構之間的電性干擾。陶瓷隔離器400的塊件404還具有一凹面408用於放置該限制樑280。於塊件404中提供供銷414使用的直通孔410，以使陶瓷隔離器400連接至位在限制樑280之插腳282a的兩面對且平行之延伸部420a、420b中的配對孔422a、422b。銷414具有兩個較小直徑的柱418a、418b，其通過直通孔和一平邊，該平邊安置在插腳282a的平行延伸部420a、420b的表面上。銷414可由諸如不銹鋼的金屬組成。陶瓷隔離器的壁架402從塊件404徑向向外延伸出並具有一突出物424作為在防升托架270的接收表面430上的終點。陶瓷隔離器400由諸如氧化鋁等陶瓷加工而成。應當注意，雖然只描述了一種陶瓷，其他陶瓷結構塊件也可放置在限制樑280和防升托架270之間，以進一步隔離該些結構，例如在樑280和基材支撐件130之間介面處放置陶瓷塊件(未示出)。
製程套組200還包括一整體圓柱形護板(unitary cylindrical shield)150，該整體圓柱形護板150環繞一濺鍍靶材的濺鍍表面，且該濺鍍靶材的濺鍍表面係面向基材支撐件130、基材支撐件130的外圓周和處理室100的側壁116的陰影。護板150用於減少來自濺鍍靶材140之濺鍍表面的濺鍍沉積物沉積至支撐件130表面上以及處理室100的側壁116與底壁120上。護板150包括一圓柱形外部帶314，其直徑大小設計成可包圍濺鍍靶材140的濺鍍表面142和基材支撐件130。外部帶314具有頂端316和底端318。頂端316具有一徑向向外變細表面，該徑向向外變細表面與濺鍍靶材140的傾斜圓周表面322相鄰。護板150還包括一底平面324，其從外部帶314的底端318徑向向內延伸以連接至一圓柱形內部帶328，該內部帶328至少部分地包圍基材支撐件130的圓周邊204。內部帶328的高度小於外部帶314的高度，例如內部帶328高度比外部帶314的高度小0.8倍。內部帶328和外部帶314之間的間隙，以及蓋環212的外壁260b和內壁260a同樣分別用於阻止並限制電漿物種進入該區域。
整體護板150的外部帶314、底板324和內部帶328包括單片的整體獨石結構。例如，整個護板150可以由300系列的不銹鋼所製成。此種護板150優於習知含有多個元件的護板，習知護板通常通常需要兩個或者三個分離元件才能構成一完整的護板，而為拆卸護板進行清洗的動作帶來更大的難度和工作量。同時，單片護板150具有暴露在濺鍍沈積物中的連續表面326，而沒有更難清洗的交界面或者拐角。而且，對於周期性維護期間的加熱還是對於電漿加熱護板時的冷卻過程來說，單片護板150比多元件式護板受熱更加均勻。單片護板150僅具有和熱交換器330接觸的一個受熱介面。單片護板150在製程循環期間還保護室壁108不受到濺鍍沈積。護板150還在靶材140區域(這裏稱之為“暗區”)產生一輪廓縫隙(contoured gap)以幫助塑造電漿形狀同時避免在靶材140和室100之間產生電弧放電。
使用熱交換器330來冷卻護板150以減小熱膨脹應力。由於暴露在基材處理室內形成的電漿中，導致部分護板150可能會變得很熱。過熱的護板150造成熱膨脹，該熱膨脹使得形成在護板上的濺鍍沈積物從該護板上剝落並污染該基材104。該熱交換器330包括由金屬構成的板332，諸如不銹鋼板。如第9圖所示，板332具有一內周335與一外周338，該內周335包括一尺寸適於環繞圓柱形護板150的圓孔336，以及該外周338包括六邊形邊(hexagonal side)340。
熱交換器330具有一多邊形導管334，以使來自流體源(未示出)的熱交換流體流經該多邊形導管334從而冷卻該板332。多邊形導管334包括多個分支(legs)344，該等分支344圍繞圓孔336互相連接成一多邊圖案。該等分支355a－h分別從該板332外周的一六邊形邊340以一銳角角度鑽穿周邊，該銳角約20°到45°。導管334還包括多個通道342a－c，該等通道342a－c各自由蓋板345a－c所覆蓋，該等蓋板345a－c具有橢圓O形圈347a－c，該等橢圓O形圈347a－c位於板345a－c中的槽349a－c內，用於密封該界面。多邊形導管334還具有用於容納和流經熱交換流體的入口346和出口348。入口346和出口348包括多個用以插入一歧管350的通道352a和352b。
該熱交換流體流過該多邊形導管334以和護板150進行熱交換並控制其溫度。適用的熱交換流體可以是水。對護板溫度進行控制可減少電漿環境中護板的膨脹，進而限制了濺鍍沈積物從該護板上剝離下來。將該護板150固定到熱交換器330上可以在護板和熱交換器板之間提供更好的熱傳輸。利用緊固件358將護板150固定到熱交換器上，並且在此範例中，護板包括一突出部分360，該突出部分360具有一貫穿突出部分360本身的實質垂直開口362。緊固件358的形狀和尺寸係設計成可通過該突出部分360中的開口362以將護板150固定在所述熱交換器330上。較佳地，該熱交換器330固定護板150的同時，該熱交換器330與源線圈153和靶材140一起整合到處理室100上。在製程期間水冷卻還可以對單片護板150提供更大的熱穩定性。
濺鍍靶材140包括通常由高強度鋁合金製成的一背板370，該背板370支撐一包括濺鍍表面142的濺鍍板374。靶材140的背板370藉著隔離器144而與室100分離並電性絕緣，該隔離器144通常由陶瓷材料構成，諸如氧化鋁。濺鍍板374係由欲濺鍍在基材104上的高純度濺鍍材料所構成，諸如鋁、鉭、鈦以及其他金屬，通常純度為99.99%或者更高。濺鍍板374包括一具有傾斜邊緣322的周邊，其與護板150的傾斜表面320相鄰，在二者之間定義出一縫隙380作為另一個電漿阻滯迴廊(convoluted labyrinth)。
在一實施例中，靶材140的背板包括一周邊突出部分390，其延伸超過濺鍍板374的半徑周邊。該周邊突出部分390藉由設置在隔離器144上來支撐靶材140，並可以固定到隔離器144或者室側壁116上。周邊突出部分390延伸超出濺鍍板374的傾斜邊緣322並且包括一設置於室100的隔離器144上的外底腳部分392。周邊突出部分390包括一內部凸起394，該內部凸起394的形狀和尺寸設計成可減少沈積在隔離器144和護板150上的濺鍍沈積物。凸起394於前面的槽396接合起來減少電漿形成以及減少濺鍍製程沈積物在室側壁108、隔離器144和熱交換器330等不希望沈積之區域上的沈積量。設計凸起394的形狀、尺寸與位置以限制電漿和濺鍍物質流過或者移動通過靶材140和隔離器144之間的間隙。具體地，凸起394阻止低角度濺鍍沈積物進入靶材和隔離器之間的間隙。凸起394具有高度約1.5到約2mm的曲線截面。
處理套組200和靶材140的各種構件明顯提高了處理循環的次數以及不必為了清洗而拆除處理套組的情況下該處理套組在處理室中的製程工作時間。可藉由減少在基材周圍難於清洗的構件上濺鍍沈積物的量來實現這一點。設計處理套組200和靶材140的構件使其允許在濺鍍區域106具有提高的功率和壓力，以藉由降低暗區的溫度來獲得更高的沈積產量，其中該暗區靠近護板150的頂端並靠近靶材140。同時使用熱交換器330也提高了護板150的熱均勻性。此外，設計處理套組200，以在必須更換套組200並執行維修前，允許至少在室100中沈積至少85%的鋁。從明顯改善處理室的正常工作時間並提高了製程產量。
第10圖為在鋁濺鍍沈積製程中從按比例縮小之處理套組所獲得的模擬結果曲線圖，其顯示形成在沉積環208與蓋環212上之沈積物厚度與離基材104和支撐件130之距離有關。該模擬程式為PVD ProTM
程式並且其應用了用於欲沈積的金屬類型以及靶材和其他室構件幾何尺寸的參數。該模型可以對蓋環212和沈積環208之數種不同特徵結構配置和位置進行比較。這使得對於在沈積環208之槽230的表面以及蓋環212的邊緣252的可視區域上最小化鋁沈積物進行最適化。利用原型硬體進行測試並且還可藉著模擬已知性能的幾何尺寸來決定模擬準確性，以獲得本文中所揭示的設計。可以看到改變室元件的形狀和設計結構以及他們之間的空間和間隙明顯改變構件表面上沈積材料的厚度。此外，在沈積環上的沈積速率隨著到基材中心的距離的增加基本保持不變，如曲線圖x軸的0.5和1.5之間具有相同角度的線性部分所示般。在不同的結構中，淨沈積量會發生垂直變化，但是曲線的形狀實質上相同。
已經參照某些較佳實施例對本發明進行了描述，但是本發明也可能存在其他實施例。例如，該領域中具有通常知識者亦可輕易地了解到該處理套組200和環組件202也可以用在其他類型的應用中，例如用於蝕刻室、CVD室。沈積環208、蓋環212、護板150和防升托架270還可以採用其他形狀和結構。因此，後附請求項的精神和範圍不應該限於本文中所包含的較佳實施方式的描述。
100．．．處理室
280．．．限制樑
104．．．基材
283．．．箭頭
106．．．處理區域
284．．．圓環
108．．．包圍壁
285．．．箭頭
116．．．側壁
282a、b．．．平插腳
120．．．底壁
286a、b．．．垂直臂
124．．．頂壁
287．．．凹槽
130．．．基材支撐件
290．．．塊件
134．．．底座
294．．．直通通道
140．．．濺鍍靶材
296．．．孔
142．．．濺鍍表面
298．．．固定環
144．．．隔離器
314．．．外部帶
148．．．靶材功率源
316．．．頂端
150．．．護板
318．．．底端
152．．．氣體激發器
322．．．傾斜邊緣
153．．．源線圈
324．．．底平面
160．．．送氣系統
326．．．連續表面
162．．．氣源
328．．．內部帶
164．．．導管
330．．．連續表面
166．．．氣流控制閥
320．．．傾斜表面
168．．．氣體分佈器
332．．．板
170．．．排氣系統
334．．．多邊形導管
172．．．排氣口
336．．．圓孔
174．．．排氣導管
335．．．內周
178．．．泵
338．．．外周
180．．．控制器
340．．．六邊形邊
200．．．處理組件
342a－c．．．通道
202．．．環組件
344a－h．．．分支
204．．．外壁
345a－c．．．蓋板
206．．．懸伸邊
346．．．入口
208．．．沉積環
347a－c．．．O形圈
212．．．蓋環
348．．．出口
216．．．環狀帶
349a－c．．．槽
218．．．內唇
358．．．緊固件
224．．．凸脊
260．．．突出部份
230．．．內管
362．．．垂直開口
232．．．平滑角
370．．．背板
234．．．傾斜表面
374．．．濺鍍板
236．．．壁架
380．．．縫隙
237．．．U型槽
390．．．周邊突出部份
244．．．環形楔
392．．．外底腳部分
246．．．底腳
394．．．凸起
248．．．傾斜表面
396．．．前面的槽
252．．．突出邊緣
400．．．隔離器
253．．．凸脊
402．．．壁架
256．．．圓形邊緣
404．．．塊件
260．．．圓柱形壁
408．．．凹面
260a．．．內壁
410．．．直通孔
260b．．．外壁
414．．．銷
262．．．徑向內表面
418a．．．柱
264．．．徑向外表面
418b．．．柱
266．．．彎曲通道
420a．．．延伸部
268．．．平坦底表面
420b．．．延伸部
270．．．防升托架
422a．．．配對孔
274．．．凹槽
422b．．．配對孔
276．．．背面
424．．．突出物
278．．．固定柱
430．．．接收表面
通過上述說明、所附申請專利範圍以及繪示本發明示範性實施例的附圖可更了解本發明的特徵、態樣和優點。但是，應該了解到可用於本發明中的各個特徵，不應僅限於特定圖示中所顯示之內容，並且本發明包括這些特徵的任意組合，其中：第1圖為具有處理套組實施例之基材處理室的側視截面示意圖；第2圖為第1圖所示之處理套組的側視截面圖；第3圖為第2圖之處理套組的透視圖；第4A圖為用於防升托架的固定架的透視圖；第4B圖為支撐件的背面透視圖，顯示出已定位的防升托架之固定架；第5圖為防升托架的透視圖，其顯示防升托架正在圍繞基材支撐件之沈積環上凹槽中的固定柱上滑動；第6圖為防升托架固定到圍繞基材支撐件之沈積環的固定柱上後的透視圖；第7圖為正在陶瓷隔離器上滑動的防升托架分解透視圖，其中該陶瓷隔離器藉由一針與限制樑的叉連接組合在一起；第8圖為防升托架、陶瓷隔離器、銷和限制樑組裝到基材支撐件上的透視圖；第9圖為內置有多邊形導管的熱交換器的頂視截面圖；以及第10圖為從按比例縮小之處理套組所獲得的模擬結果曲線圖，其顯示形成在構件上之沈積物厚度與離基材和支撐件之距離有關製程中。
104．．．基材
130．．．基材支撐件
134．．．底座
150．．．護板
200．．．處理套組
202．．．環組件
204．．．外壁
206．．．懸伸邊
208．．．沉積環
212．．．蓋環
216．．．環狀帶
224．．．凸脊
230．．．內管
232．．．平滑角
234．．．傾斜表面
236．．．壁架
237．．．U型槽
246．．．底腳
248．．．傾斜表面
252．．．突出邊緣
253．．．凸脊
256．．．圓形邊緣
260．．．圓柱形壁
260a．．．內壁
260b．．．外壁
262．．．徑向內表面
264．．．徑向外表面
266．．．彎曲通道
268．．．平坦底表面
270．．．防升托架
280．．．限制樑
314．．．外部帶
318．．．底端
324．．．底平面
328．．．內部帶
330．．．連續表面
Claims (35)
- 一種在基材處理室中位於基材支撐件周圍的沈積環，在該處理室中形成一處理氣體的電漿以處理一基材，該支撐件包括一終止於該基材懸伸邊前的外壁，並且該沈積環包括：(a)一環形帶，圍繞著該支撐件的外壁，該環形帶包括：(i)一從該環形帶橫向延伸出的內唇，該內唇實質上與該支撐件的該外壁平行，並且終止於該基材懸伸邊的下方；(ii)一凸脊；(iii)一內部開口通道，該內部開口通道位於該內唇和該凸脊之間，並至少部分沿伸於該基材的懸伸邊的下方；以及(iv)一該凸脊之徑向向外的壁架。
- 如申請專利範圍第1項所述的沈積環，其中該凸脊沿著該環形帶的中心部分延伸並具有一平坦頂面。
- 如申請專利範圍第1項所述的沈積環，其中該內部開口通道具有一第一圓角與一傾斜表面，該第一圓角與該內唇接合，以及該傾斜表面係與該凸脊接合。
- 如申請專利範圍第1項所述的沈積環，更包括一U型 槽，位於該凸脊和該環形帶的該壁架以及一蓋環之間。
- 如申請專利範圍第1項所述的沈積環，其中該環形帶包括不銹鋼。
- 一種蓋環，用以至少部分覆蓋一具有一壁架和一內部開口通道的沈積環；在一基材處理室中該蓋環和該沈積環位於基材支撐件的周圍；在該基材處理室形成一處理氣體的電漿以處理該基材；該支撐件包括一外壁，該外壁終止於該基材之懸伸邊前，並且該蓋環包括：(a)一環形楔，環形楔包括：(i)一突出邊緣，該突出邊緣覆於該沈積環的該內部開口通道上，該突出邊緣終止於一邊緣且具有一向下延伸之凸脊；(ii)一向下延伸之底腳，該底腳位於該沈積環的該壁架上；以及(iii)一傾斜表面，該傾斜表面係從一圓柱形壁連續地延伸至該突出邊緣的該邊緣，該傾斜表面係以相對於一軸的一角度傾斜，該軸係垂直於該基材支撐件的該平面；以及(b)一個或多個圓柱形壁，該等一個或多個圓柱形壁從該環形楔向下延伸。
- 如申請專利範圍第6項所述的蓋環，其中該沈積環的該凸脊和該突出邊緣定義出一彎曲間隙，該彎曲間隙阻止電漿物種穿越通過該彎曲間隙。
- 如申請專利範圍第6項所述的蓋環，其中該環形楔的該傾斜表面傾斜一角度，該角度至少為約60°。
- 如申請專利範圍第6項所述的蓋環，其中該等圓柱形壁沿該底腳徑向向外設置。
- 如申請專利範圍第6項所述的蓋環，其中該等圓柱形壁包括內壁和外壁，該內壁高度小於該外壁高度。
- 如申請專利範圍第6項所述的蓋環，其中該突出邊緣的該邊緣係為圓形邊緣。
- 如申請專利範圍第1項所述的蓋環，其中該突出邊緣包括一平坦底面。
- 如申請專利範圍第1項所述的蓋環，其中該凸脊具有與該下方沈積環的表面輪廓相匹配且順服的的外部形狀。
- 如申請專利範圍第6項所述的蓋環，其中該蓋環包括 鈦。
- 一種在基材處理室中位於一基材支撐件周圍的環組件，在該基材處理室中形成一處理氣體電漿以處理該基材，該支撐件包括終止於該基材懸伸邊之前的一外壁，並且該環組件包括：(a)一環形帶，圍繞該支撐件外壁，該環形帶包括：(i)一從該環形帶橫向延伸的內唇，該內唇實質上與該支撐件的外壁平行，並且終止於該基材懸伸邊的下方；(ii)一凸脊；(iii)一內部開口通道，該內部開口通道位於該內唇和該凸脊之間，並至少部分延伸於該基材的該懸伸邊下方；以及(iv)一從該凸脊徑向向外的壁架；以及(b)一蓋環，其至少部分覆蓋該沈積環，該蓋環包括：(i)一環形楔，該環形楔包括一底腳與一傾斜表面，以及一突出邊緣，該底腳位於該沈積環的該壁架上，且該突出邊緣傾斜表面係覆於該沈積環之該內部開口通道上；以及(ii)一個或多個從該環形楔向下延伸的圓柱形壁，從而該凸脊和該蓋環定義出一彎曲間隙，該彎曲間隙阻止電漿物種通過該間隙。
- 一種在基材處理室中用以在一基材支撐件周圍固定一沈積環的固定組件，該沈積環包括具有一固定柱的一周邊凹槽，並且該固定組件包括：(a)一包括兩端的限制樑，該限制樑能與該基材支撐件連接；(b)一防升托架，該防升托架包括：(i)一塊件(block)，該塊件包括一直通通道，用於容納一限制樑的一端；(ii)一固定環，該固定環連接至該塊件，該固定環的尺寸係設計成使其在該沈積環之該周邊凹槽中的該固定柱上滑動，從而，在使用時，該直通通道在限制樑上滑動使得該固定環環繞該固定柱，該固定柱允許該塊件的重量穩定地將該沈積環固定至支撐件。
- 如申請專利範圍第16項所述的固定組件，更包括位於所述防升托架和限制樑之間的一陶瓷隔離器。
- 如申請專利範圍第17項所述的固定組件，其中該陶瓷隔離器包括氧化鋁。
- 一種整體護板，該整體護板在基材處理室中能圍繞一面對著一基材支撐件之濺鍍靶材的濺鍍表面，以減少沈積 在該支撐件和該處理室側壁上的濺鍍沈積物，該護板包括：(a)一圓柱形外部帶，該圓柱形外部帶具有圍繞該濺鍍靶材之濺鍍表面和該基材支撐件的直徑尺寸，該外部帶具有頂端和底端，該頂端具有鄰近該濺鍍靶材的一徑向向外變細表面；(b)一底板，該底板從該外部帶的底端徑向向內延伸；以及(c)一圓錐形內部帶，該圓錐形內部帶與該底板接合並且至少部分圍繞該基材支撐件的周邊邊緣。
- 如申請專利範圍第19項所述的護板，其中該外部帶、底板和內部帶包括一整體結構。
- 如申請專利範圍第20項所述的護板，其中該內部帶的高度低於該外部帶。
- 一種用於在基材處理室中冷卻一圓柱形護板的熱交換器，該熱交換器包括：(a)一板材，該板材包含一內周，該內周包括一尺寸適於圍繞一圓柱形護板的圓孔；以及(b)一位於所述板材中的多邊形導管，用以使熱交換流體流過該多邊形導管，該多邊形導管包括多個分支，該等分支互相連接成一多邊形圖案圍繞著該圓孔，並且該多邊 形導管包括一入口和一出口。
- 如申請專利範圍第22項所述的熱交換器，其中該板包括一外周，該外周包含六邊形邊，並且該等分支呈銳角方式鑽透該等六邊形邊。
- 如申請專利範圍第23項所述的熱交換器，其中該等銳角為約20°到約45°。
- 一種在基材處理室中可以安裝在一護板內以及位於一隔離器上的濺鍍靶材，該濺鍍靶材包括：(a)一濺鍍板，其係由欲濺鍍到該基材上的一濺鍍材料所構成，該濺鍍板包括一傾斜邊緣；(b)一背板，用於支撐該濺鍍板，該背板包括一周邊突出部分，該周邊突出部份延伸超出該濺鍍板的該傾斜邊緣周邊，該周邊突出部分包括一底腳與一內部凸起，該底腳位在該室中的該隔離器上，以及該內部凸起的形狀與大小係經設計以減少沈積在該隔離器和該護板上的濺鍍沈積物。
- 如申請專利範圍第25項所述的靶材，其中該凸起包括一高度約1.5毫米到約2毫米的曲線截面。
- 如申請專利範圍第25項所述的靶材，其中該背板包括高強度鋁合金。
- 如申請專利範圍第25項所述的靶材，其中該濺鍍板包括一含鋁濺鍍表面。
- 一種處理套組，用於在一基材處理室中圍繞一面對著基材支撐件的濺鍍靶材之濺鍍表面，以減少沈積在該支撐件和該處理室側壁上的濺鍍沈積物，該支撐件包括一外壁與一限制樑，該外壁終止於該基材之懸伸邊的下方，該處理套組包括：(a)一沉積環，該沉積環包括一圍繞該支撐件的環形帶，該沈積環具有一從該環形帶橫向延伸出的內唇，該內唇實質上平行於該支撐件的外壁且終止於該基材之懸伸邊的下方；一凸脊；一內部開口通道，該內部開口通道位於該內唇和該凸脊之間，並且該內部開口通道至少部分沿於該基材之懸伸邊的下方；一沿該凸脊徑向向外的壁架；以及一周邊凹槽，其具有一固定柱周邊；(b)一蓋環，該蓋環至少部分覆蓋該沈積環，該蓋環包括一環形楔，該環形楔包括一底腳、一傾斜表面、一突出邊緣以及一個或多個圓柱形壁，該底腳位於該沈積環的該壁架上，該突出邊緣覆於該沈積環之該內部開口通道上，且該一個或多個圓柱形壁係從環形楔向下延伸；以及 (c)一防升托架，該防升托架包括一塊件，該塊件包含一直通通道與一固定環，該直通通道係用於容納該支撐件之限制樑的一端，並且該固定環的尺寸設計成使其能在該沈積環的該周邊凹槽中的該固定柱上滑動。
- 如申請專利範圍第29項所述的處理套組，其中該沈積環更包括一外唇，該外唇沿該凸脊徑向向外設置並從該環形帶橫向延伸出。
- 如申請專利範圍第29項所述的處理套組，其中該蓋環之環形楔的該傾斜表面與垂直於基材的方向呈一傾斜角度，該角度至少為約60°。
- 如申請專利範圍第29項所述的處理套組，其中該蓋環包括一內圓柱狀壁和一外圓柱狀壁，該內圓柱狀壁的高度小於該外圓柱狀壁的高度。
- 如申請專利範圍第29項所述的處理套組，其中該蓋環之該突出邊緣的該傾斜頂面終端呈圓形邊緣狀並具有一平坦底面。
- 如申請專利範圍第29項所述的處理套組，其中該防升托架的該塊件包括用一垂直通孔，用於容納一緊固件，以 將該塊件固定於該支撐件。
- 如申請專利範圍第29項所述的處理套組，更包括一整體護板，該整體護板包括：(a)一圓柱形外部帶，該圓柱形外部帶具有設計用以圍繞該濺鍍靶材之濺鍍表面和該基材支撐件的直徑尺寸，該外部帶具有頂端和底端，該頂端具有與該濺鍍靶材相鄰的一徑向向變細表面；(b)一底板，該底板從該外部帶的該底端向內徑向延伸；以及(c)一圓錐形內部帶，該圓錐形內部帶與該底板接合，並且該圓錐形內部帶至少部分圍繞該基材支撐件的周邊邊緣。
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-
2006
- 2006-10-27 US US11/553,982 patent/US9127362B2/en active Active
- 2006-10-31 KR KR1020060106729A patent/KR101322342B1/ko active IP Right Grant
- 2006-10-31 DE DE102006051443A patent/DE102006051443A1/de not_active Withdrawn
- 2006-10-31 CN CN2006101366947A patent/CN101089220B/zh active Active
- 2006-10-31 JP JP2006296371A patent/JP2007146290A/ja active Pending
- 2006-10-31 CN CN201310053011.1A patent/CN103147049B/zh active Active
- 2006-10-31 TW TW095140305A patent/TWI435941B/zh active
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2013
- 2013-04-17 KR KR1020130042352A patent/KR101394085B1/ko active IP Right Grant
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2015
- 2015-09-07 US US14/846,951 patent/US10347475B2/en active Active
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2019
- 2019-05-10 US US16/409,757 patent/US11658016B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10347475B2 (en) | 2019-07-09 |
| CN103147049B (zh) | 2015-04-08 |
| TW200730645A (en) | 2007-08-16 |
| KR101322342B1 (ko) | 2013-10-28 |
| US11658016B2 (en) | 2023-05-23 |
| US20150380223A1 (en) | 2015-12-31 |
| KR20130062955A (ko) | 2013-06-13 |
| KR20070046765A (ko) | 2007-05-03 |
| US20190267220A1 (en) | 2019-08-29 |
| CN101089220A (zh) | 2007-12-19 |
| DE102006051443A1 (de) | 2007-05-24 |
| KR101394085B1 (ko) | 2014-05-13 |
| CN103147049A (zh) | 2013-06-12 |
| CN101089220B (zh) | 2013-03-27 |
| US20070102286A1 (en) | 2007-05-10 |
| JP2007146290A (ja) | 2007-06-14 |
| US9127362B2 (en) | 2015-09-08 |
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