CN101089220A - 用于衬底处理室的处理配件和靶材 - Google Patents
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Abstract
本发明公开了一种处理配件,该处理配件包括在衬底处理室中设置于衬底支架周围的环组件,其用于减少沉积在室组件和衬底的悬伸边上的工艺沉积物。该处理配件包括沉积环、盖环以及防升托架,并且还包括整体护板。同时还对靶材进行了说明。
Description
相关申请的交叉引用
本申请要求享有2005年10月31日提交的临时专利申请No.60/732,324的优先权,在此引用其全部内容作为参考。
技术领域
本发明涉及用于衬底处理室的处理配件和靶材。
背景技术
在处理诸如半导体晶圆和显示器的衬底的过程中,将衬底放置在处理室中并设定处理室中的处理条件以在该衬底上沉积或者蚀刻材料。典型的处理室包括多个室部件,其包括包围处理区的围墙壁、用于在室内提供气体的气源、对处理气体施加能量以处理衬底的激发器、用于保持衬底的衬底支架,以及去除废气并保持室内气压的排气装置。该室可以包括CVD、PVD和蚀刻室。在PVD室中,溅射靶材以促使靶材料沉积在与靶材相对的衬底上。在溅射工艺中,将惰性气体或者反应气体提供到室内,通常对靶材施加电偏压,并且对衬底保持某一浮动电压,从而在室内产生导致靶材溅射的等离子体。
PVD室可以包括包含室部件的处理配件,将该室部件设置在衬底支架处以减少在室侧壁或者其他区域上沉积PVD形成物。例如,典型的PVD室处理配件可以包括沉积、覆盖和/或遮蔽环,所有这些均位于衬底的周围。设置不同的环结构来接收溅射沉积,否则这些沉积物将会聚集在支架的侧面或者衬底的暴露背面上。该处理配件还可以包括通过采用容纳表面来接收PVD溅射沉积物从而保护室侧壁的室护板和内衬,否则这些沉积物会沉积在室的侧壁上。这些处理配件部件还减少了在所述表面上的溅射沉积物的累积,否则最终这些沉积物将会脱落从而形成沉积在衬底上的污染颗粒。所述配套元件还可以通过施加能量的等离子体减少内部室结构的腐蚀。同时为了清洗累积的沉积物,还可以将这些部件设计为方便拆卸的配件。在经过成批衬底处理后,例如,处理1000个衬底后,通常去除所述处理配套部件并采用包括HF和HNO3的酸性溶液清洗从而去除在工艺循环期间累积在配套部件上的溅射沉积物。
人们希望存在一种包括相对于彼此成型并设置的元件的处理配件,该配件可以降低室内壁上形成的溅射沉积物的数量。减少累积沉积物使得在不必关机或者为了清洗分解所述室的情况下在该室中连续处理更大量的衬底。每次该室需要清洗时,其造成的停机时间提高了衬底的处理成本。因此,人们希望在不关掉处理室以清洗其内表面的情况下最大化采用该室在衬底上沉积溅射材料的时间量。
而且,在某些PVD工艺中,诸如铝PVD工艺,溅射的铝沉积在累积在各种沉积、覆盖和衬底周围的其他环之间的间隙中,并且还形成在衬底的背面。该累积的溅射沉积物导致在试图从所述支架上去除衬底时所述衬底粘在沉积环上从而导致衬底损伤。人们希望存在一种可以减少衬底背面沉积以及支架侧面沉积的环,在该环上不会累积导致衬底粘结在环上的沉积物。同时还希望在从支架上提升衬底时防止部分粘连的沉积环随着衬底一起升高从而减少对衬底和/或沉积环的损伤。
当围绕衬底的内衬和护板由于暴露在室内的溅射等离子体中而升温时又产生另一问题。通常,在室的低压环境中内衬和护板不会和周围的室部件交换很多的热量以将所述部件的温度降低到可接受的水平。由于所述部件热扩散产生在完成工艺循环后护板和内衬上形成的溅射沉积物发生剥落或者散裂的热应力,因此所述部件上的过量的热量是不利的。因此,在处理衬底的过程中希望护板和内衬保持在较低的温度。
发明内容
本发明的目的在于提供一种处理配件,该配件可以降低处理室内壁上由于溅射工艺而沉积的沉积物数量,从而在不必关机或者为了清洗分解所述室的情况下在该处理室中连续处理更多的衬底。
本发明的另一目的在于减少衬底背面沉积,从而减少对衬底的损伤。
本发明的再一目的在于在处理衬底的过程中将护板和内衬保持在较低的温度,从而减少护板和内衬上形成的溅射沉积物发生剥落或者散裂导致引入污染颗粒的现象。
因此,根据本发明的一方面,本发明提供了一种在衬底处理室中位于衬底支架周围的沉积环,在该处理室中形成处理气体等离子体,所述支架包括中止于所述衬底悬伸边的外壁,并且所述沉积环包括:(a)围绕所述支架外壁的环形带,所述环形带包括:(i)从所述环形带横向延伸处的内唇,其基本上和所述支架的外壁平行,并且在所述衬底悬伸边的下部终止;(ii)凸起的脊;(iii)位于所述内唇和凸起的脊之间的内部开口通道,并至少部分沿所述衬底的悬伸边延伸;以及(iv)所述凸起的脊向外呈放射状的壁架。
根据本发明的另一方面,本发明提供了一种至少部分覆盖具有凸起的脊和内部开口通道的沉积环的盖环,在衬底处理室中所述覆盖和沉积环位于衬底支架的周围,在所述衬底处理室形成处理气体的等离子体从而处理所述衬底,所述支架包括终止于所述衬底悬伸边的外壁,并且所述盖环包括:(a)环形楔,其包括位于所述沉积环的凸起的脊上的底脚以及进入叠加在所述沉积环的内部开口通道的突出边的倾斜表面;以及(b)一个或者多个从环形楔向下延伸的圆柱形壁。
根据本发明的再一方面,本发明提供了一种在衬底处理室中位于衬底支架周围的环组件,在该处理室中形成处理气体等离子体以处理所述衬底,所述支架包括中止于所述衬底悬伸边的外壁,并且所述环组件包括:(a)围绕所述支架外壁的环形带,所述环形带包括:(i)从所述环形带横向延伸处的内唇,其基本上和所述支架的外壁平行,并且在所述衬底悬伸边的下部终止;(ii)凸起的脊;(iii)位于所述内唇和凸起的脊之间的内部开口通道,并至少部分沿所述衬底的悬伸边延伸;以及(iv)所述凸起的脊向外呈放射状的壁架;以及(b)至少部分覆盖所述沉积环的盖环,所述盖环包括:(i)环形楔,其包括位于所述沉积环的凸起的脊上的底脚以及进入与所述沉积环叠加的内部开口通道的突出边的倾斜表面;以及(ii)一个或者多个从环形楔向下延伸的圆柱形壁,从而所述凸起的脊和所述盖环限定了阻止等离子体通过所述间隙的弯曲间隙。
根据本发明的又一方面,本发明提供了一种在衬底处理室中用于在衬底支架周围保持沉积环的固定组件,所述沉积环包括具有固定柱的外围凹槽,并且所述固定组件包括:(a)包括两端的限制梁,所述限制梁可以与所述衬底支架连接;(b)防升托架包括:(i)包括用于容纳限制梁一端的直通通道的部件;(ii)与所述部件连接固定环,设计所述固定环的尺寸使其在所述沉积环的外围凹槽中的固定柱上部滑动,从而,在使用时,所述直通通道在限制梁上滑动使得所述固定环环绕所述固定柱,所述固定柱允许使所述部件的重量稳定地将所述沉积环固定到支架上。
根据本发明的又一方面,本发明提供了一种在衬底处理室中可以围绕与衬底支架相对的溅射靶材的溅射表面的整体护板,其可以减少沉积在支架和室侧壁上的溅射沉积物,所述护板包括:(a)具有围绕溅射靶材的溅射表面和所述衬底支架的直径尺寸的圆柱形外部带,所述外部带具有顶端和底端,所述顶端具有与所述溅射靶材相邻沿径向向外的锥形表面;(b)从所述外部带底端向内径向延伸的底板;(c)与底板接合的圆锥形内部带,并且其至少部分围绕所述衬底支架的外围边缘。
根据本发明的又一方面,本发明提供了一种用于在衬底处理室中冷却圆柱形护板的热交换器,所述热交换器包括:(a)一板,其内周包括设计尺寸适于围绕圆柱形护板的圆孔;以及(b)位于所述板中的多边形导管,在所述导管中流过热交换液体,所述多边形导管包括以多边形图案形状围绕所述圆孔互连的多个分支,并且所述多边形导管包括入口和出口。
根据本发明的又一方面,本发明提供了一种在衬底处理室中可以固定在护板内以及位于隔离器上的溅射靶材,所述溅射靶材包括:(a)由要溅射到所述衬底上的溅射材料构成的溅射板,所述溅射板包括倾斜边缘;(b)用于支撑所述溅射板的背板,所述背板包括超出所述溅射板的倾斜边缘延伸的外围突出部分,所述外围突出部分包括在该室中位于所述隔离器上的底脚,以及内部凸起,设计所述内部凸起的形状和尺寸以减少沉积在所述隔离器和护板上的溅射沉积物。
根据本发明的又一方面,本发明提供了一种在衬底处理室中可以围绕与衬底支架相对的溅射靶材的溅射表面的处理配件,其可以减少沉积在支架和室侧壁上的溅射沉积物,所述支架包括中止于所述衬底悬伸边下部的外壁和限制梁,所述处理配件包括:(a)包括围绕所述支架的环形带的沉积环,所述沉积环具有从所述环形带横向延伸的内唇,其基本上和所述支架的外壁平行,并且在所述衬底悬伸边的下部终止;凸起的脊;位于所述内唇和凸起的脊之间的内部开口通道,并至少部分沿所述衬底的悬伸边延伸;所述凸起的脊径向向外的壁架;以及具有固定柱的外围凹槽;(b)至少部分覆盖沉积环的盖环,所述盖环包括环形楔,其包括位于所述沉积环的凸起的脊上的底脚以及并具有进入叠加在所述沉积环的内部开口通道的突出边的倾斜表面;以及一个或者多个从环形楔向下延伸的圆柱形壁;以及(c)防升托架包括用于容纳限制梁一端的直通通道的部件和与固定环,设计所述固定环的尺寸使其在所述沉积环的外围凹槽中的固定柱上部滑动。
本发明可实现包括以下的一个或多个优点。本发明可以降低处理室内壁上由于溅射工艺而沉积的沉积物数量,从而在不必关机或者为了清洗分解所述室的情况下在该处理室中连续处理更多的衬底,减少对衬底的损伤,减少护板和内衬上形成的溅射沉积物发生剥落或者散裂导致引入污染颗粒的现象等。
以下将结合附图详细描述本发明的一个或多个实施方式。本发明的其它目的、特征、方面和优点在以下描述并结合附图和权利要求书中将变得更加明显可见。
附图说明
通过如下的说明书、所附权利要求以及表示本发明实施例的附图可以使本发明的所述特征、方面和优点更加显而易见。但是,应该认识到在本发明中所采用的各个特征,不应仅限于具体示图,并且本发明包括这些特征的任意组合,其中:
图1为具有处理配件的实施方式的衬底处理室的截面侧视示意图;
图2为图1所示的处理配件的界面侧视图;
图3为图2的处理配件透视图;
图4A为用于防升托架的保持架的透视图;
图4B为位于防升托架的保持架处的支架背面的透视图;
图5为在围绕衬底支架的沉积环上凹槽中的固定柱上滑动的防升托架的透视图;
图6为在将防升托架固定到围绕衬底支架的沉积环的固定柱上后该防升托架的透视图;
图7为在陶瓷隔离器上滑动的防升托架的分解透视图,其中该陶瓷隔离器通过针固定组件与限制梁的叉连接在一起;
图8为防升托架、陶瓷隔离器、针和限制梁装配到衬底支架上的透视图;
图9为具有内置多边形导管的热交换器的顶部截面图;以及
图10为作为到衬底和支架的距离的函数,形成在部件上沉积物厚度的铝沉积工艺中处理配件等比例尺寸获得的模拟结果曲线图。
具体实施方式
适用的处理室100的实施例可以处理图1所示的衬底104。处理室100包括包围处理区域106的包围壁108,所述壁108包括侧壁116、底部壁120和顶板124。处理室100可以室具有一系列通过机械手互连的室的多室平台(未示出)的一部分,其中所述机械手机械装置可以在室106之间传输衬底104,在所示的实例中,处理室100包括溅射沉积室,还成为物理汽相沉积或者PVD室,其可以在沉积104上溅射沉积材料,诸如钽、氮化钽、钛、氮化钛、铜、钨、氮化钨和铝。
室100包括用于支撑衬底104的衬底支架130,该支架包括底座134。底座134具有在工艺期间承载并支撑衬底104的容纳表面。并可以包括静电卡盘和加热器,诸如电阻式加热器或者热交换器(未示出)。在工作中,通过位于室100的侧壁上的衬底加载入口将衬底104引入室100并将其放置于衬底支架130上。通过支架提升风箱提升或者降低支架130和/或在支架130上定位衬底104期间可以采用升降指状组件在支架130上提升或者降低衬底。在等离子工作期间所述底座134保持在电浮动电势或者地电势状态。
处理室100还包括具有面向衬底104的溅射表面的溅射靶材140,其包括向衬底104溅射的材料。靶材104通过一般由介电或绝缘材料组成的绝缘体144电绝缘处理室100。靶材140连接靶材功率源148和/或电气浮接的电支架130,该靶材功率源140给靶材140和位于处理室前壁的护板150施加偏压。靶材140、护板150、支架130和连接靶材功率源148作为气体激发器以形成等离子溅射气体。气体激发器152还可包括源线圈153其用于利用通过该线圈的电流在处理室100中产生等离子体。所产生的等离子体激发地撞击并轰击靶材140的溅射表面142以将表面142的材料溅射到衬底104上。
通过送气系统160将溅射气体通入到处理室100中,提供来自气源162的气体以设定的流速经由具有气流控制阀166的导管164诸如质量流量控制器通过其中。气体送入混合的歧管装置(也未示出)其中该气体混合以形成所需的处理气体并送入处理室100中具有气体出口的气体分布器168。工艺气体可包括诸如氩气或氙气的非反应气体,其能激发地撞击并溅射靶材。工艺气体也可包括诸如一种或多种含氧气体和含氮气体的反应气体,其能与溅射的材料反应以形成衬底104上的层。消耗的工艺气体和副产品通过包括排气口172的排气170从处理室100排出,该排气口接收消耗的工艺气体并使该消耗的工艺气体通入具有节流阀176用以控制处理室100中气压的排气导管174。该排气导管174连接一个多个泵178。一般地,处理室中溅射气体的气压设置在诸如真空环境的低于大气压水平,例如1mTorr到400mTorr的气压。
处理室100通过包含具有指令设置的程序代码的控制器180控制以操作处理室100的元件在处理室100中处理衬底104。例如,控制器180可包含程序代码其包括衬底位置设置指令以操作衬底支架130以及执行衬底传送,气流控制指令以操作气流控制阀设置进入处理室100的溅射气体的气流;气压控制指令设置以操作排气节流阀保持处理室100中的气压;气体激发控制指令设置以操作气体激发器设置气体激发功率值;温度控制指令设置以控制温度控制系统从而设置处理室100中不同元件的温度;以及处理监控指令设置以监控处理室100中的工艺。
处理室包括工艺套件200,其包括可便于从处理室100移除的不同部件,例如清除元件表面的溅射沉积,替换或修理腐蚀的部件,或者使处理室用于其它工艺。在一种类型中,工艺套件200包括环组件202用于设置衬底支架130的外壁204,该衬底支架130终止于衬底的悬伸边206前。环组件202包括沉积环208和盖环212其互相结合用于减少在支架130的外壁204或衬底104的悬伸边206上形成溅射沉积。
如图2和图3中所示沉积环208包括环状带216其扩展至并包围支架130的外壁204。环状带216包括内唇218其从该带横向扩展并基本上平行衬底130的外壁204。内唇218终止在衬底104的悬伸边206的下方。内唇218限定沉积环208的内周长,该沉积环208包围衬底104和支架130的外围以在工艺期间保护没有被衬底104覆盖的支架130的区域。例如,内唇218包围并至少部分覆盖衬底130的外壁204,否则其将暴露在工艺环境中,以减少或甚至完全阻止在外壁204上溅射沉积。有利地,沉积环208能容易地移除以将溅射沉积暴露从环表面清除,从而支架130不必拆除清洗。沉积环208还可用于保护支架130暴露侧的表面以降低由于激发的多种等离子体的腐蚀。沉积环208通常由诸如不锈钢或铝的金属组成,或可由诸如氧化铝的陶瓷材料组成。
在如图2和图3所示的类型中,沉积环208的环状带216具有凸起的脊224其沿着带216的中心部分扩展。凸起的脊224具有平坦的顶面228,该顶面228与盖环212相隔以在两者之间形成弯曲间隙229其作为汽封以减少多种等离子体进入弯曲间隙。开口内管230位于内唇218和凸起的脊224之间开口内管230径向向内扩展并至少部分终止于衬底104的悬伸边206下方。内管230具有与内唇218联结的第一圆角232和与凸起的脊224联结的略微倾斜的表面234。平滑角232和倾斜表面234有助于在清洁沉积环208的期间从这些部分移除溅射沉积。沉积环208还具有壁架236其位于凸起的脊224的径向向外处并用于支撑盖环212。另外,U型槽237设置在凸起的脊224和壁架236之间以在两者之间形成弯曲的通道其进一步防止等离子体或气态物流经该通道从而减少工艺沉积物在该通道的径向向外的区域中沉积。因此形成沉积环的形状和大小以减少通过这些区域的工艺沉积物。不同于现有技术设计,由于在传送至处理室期间在处理室中准确放置衬底,即使衬底104滑动或在处理室中100放置错误,在沉积环208中不需要用钉以固定衬底104。
环组件202的盖环212包围并至少部分覆盖沉积环208以接收并因此为沉积环208阻挡大量溅射沉积。盖环212由能抗溅射的等离子体腐蚀的材料例如诸如不锈钢、钛或铝的金属材料或诸如氧化铝的陶瓷材料组成。在一种类型中,盖环212由钛制造。盖环212包括具有底脚的环形楔224,该底脚位于沉积环208的壁架236上以支撑盖环212。底脚246从楔244向下扩展以支撑沉积环208并基本上不会使环208压裂破坏。
盖环212的环形楔224具有倾斜表面248其用作在靶材和支架130之间的工艺区内包含溅射的等离子体。倾斜表面248具有光滑和连续的表面,其中溅射沉积物可沉积在其上并可易于除去。在一种型号中,该倾斜表面248以相对于轴成一角度,该轴垂直于由衬底104的处理表面形成的平面。在一种型号中,该角度至少约为60°,并可甚至约为65°到约85°,或甚至为约80°。盖环212倾斜表面的角度设计为使最接近衬底104的悬伸边206的溅射沉积物的堆积最小化,否则其将负面影响衬底104获得均匀沉积。
楔244逐渐变细成突出边缘252其覆盖沉积环208的内管230。该突出边缘252端部为圆形边缘256并具有平坦底表面260。突出边缘252减少溅射沉积物沉积在沉积环208的开口内管上。有利地,突出边缘252突出的长度至少约为沉积环208的开口内管宽度的一半。例如,如果内管230有至少约12mm宽,突出边缘252的宽度至少约为6mm。突出边缘252在沉积环208的开口内管230上方伸出以更接近衬底的外边206,从而覆盖沉积环208的开口内管230的一部分。另外,突出边缘252具有凸起的脊253,该凸起的脊253的外形与沉积环208下的表面234的形状相匹配并与其接合。这种成形的并非常匹配的形状阻止建设沉积物沉积在衬底的外悬伸边206上并还减少沉积物在支架130的外壁204上。通过限制多种气态等离子体和外边缘204上溅射沉积物的流动它们还使沉积产生在管230的表面。因此,突出边缘252外形大小、形状成形并设置以与沉积环208的开口内管230一起相辅从而在盖环212和沉积环208之间形成回旋的和狭窄的通道以阻止外边204上工艺沉积物的流动。该狭窄的流动通道还阻止低能量的溅射沉积物堆积在沉积环和盖环212的配合面上,否则其将使该溅射沉积物彼此粘接或粘附到衬底104的外悬伸边206上。在衬底悬伸边206下扩展的沉积环208的开口内管230设计为与由盖环208的突出边缘252的阻挡相结合以收集例如在铝溅射处理室100中最小量3900μm的铝溅射沉积,同时减少或甚至基本上阻止溅射沉积在两个环208、212的配面上。
盖环212还具有一对圆柱形壁260其从环形楔244向下扩展。该圆柱形壁260位于楔244的底脚径向向外处。圆柱形壁260包括内壁260a和外壁260b,内壁260a具有小于外壁260b的高度。内壁260a的径向内表面262为倾斜的以与沉积环208的径向外表面264的倾斜角一致从而形成另一弯曲的通道266其阻止等离子体进入周围区域和对周围区域辉光放电。一般地,外壁260a的高度至少约为内壁260b高度的1.2倍。例如,对于具有内径约154mm的盖环212,外壁160a的高度约25mm,以及内壁的高度约19mm。
在另一类型中,如图3-6中所示,工艺套件200还包括防升托架270用于在处理室100内在衬底支架130的外围固定沉积环208。防升托架270与沉积环208和支架130的附加结构相结合。例如,沉积环208包括两个外围凹槽274其具有从槽274伸出的固定柱以在每侧固定一对防升托架270,其中一侧如图5中所示。一对槽沿径彼此相对地位于支架130上。在该型号中,如图4A和4B中所示,限制梁280也装配在支架130的背面276以固定防升托架270。该限制梁280包括两个相对的平插脚282a、282b,其在支架130的背面276中的圆环284的径向外围扩展。两个相对的平插脚282a、282b装配在联接圆环284的垂直臂286a、286n上。圆环284在形状和大小上适合在支架背面中的凹槽287。
如图5和图6中所示,防升托架270包括部件290,该部件290包含直通通道294其固定限制梁280的插脚端282。直通通道294包括椭圆形孔296其大小大于限制梁280的插脚282a。连接部件290的固定环298在大小上能在沉积环208的凹槽274的固定柱278上方移动。在组装期间,如图5中所示,防升托架270放置在沿着沉积环208的外围并且直通通道274的孔296移动至如箭头283所示的限制梁280的插脚282上从而固定环298的进入孔299直接在固定柱278的上方。接着如图6中所示,如箭头285所示降低防升托架274,从而固定环298下降并包围固定柱278,使托架270的部件290的重量稳固地托住沉积环208。当沉积环208向上拉时,例如当沉积环开始粘附衬底104时,防升托架270仅接触限制支架280。这种设计使在通常使用中的陶瓷沉积环208和盖环212上的热应变和机械应变最小。
如图7和图8中所示,组件的另一类型包括防升托架270其用于在处理室100中在衬底支架130的外围上固定沉积环208。在该类型中,防升托架270粘接陶瓷绝缘体400,该陶瓷绝缘体400接着耦合限制梁280的平插脚282a、282b。防升托架270移动至壁架402上,该壁架由陶瓷绝缘体400的部件404外部扩展。陶瓷绝缘体400用于通过在支架130和沉积环208之间的电路中提供绝缘元件使限制梁280与其它部件电绝缘。当沉积环208由金属组成时,切断电路用于降低这两个结构之间的干扰。陶瓷绝缘体400的部件404还具有凹面408用于放置限制梁280。部件404中的直通孔410具有销414以在限制梁280的插脚282a的正对和平行延伸420a、420b上使陶瓷绝缘体400连接配向孔418a、418b。销414具有两个减小直径的柱418a、408b其通过直通孔和平边,该平边安置在插脚282a的平行延伸420a、420b的表面上。销414可由诸如不锈钢的金属组成。陶瓷绝缘体的壁架402从部件404径向向外扩展并具有突出物424其作为在防升托架270的接收表面430上的终点。陶瓷绝缘体400由诸如氧化铝的陶瓷组成。应当注意虽然只描述了一种陶瓷,其它陶瓷结构部件也可放置在限制梁280和防升托架270之间以进一步绝缘诸如放置在它们界面上的梁280和衬底支架130之间的陶瓷部件(未示出)的结构。
工艺套件200还包括包围单圆柱形护板150,其面向衬底支架130的溅射靶材的溅射表面,衬底支架130的外围和处理室100的侧壁116的阴影。护板150用于减少来自支架130表面上的溅射靶材140的溅射表面,和侧壁116以及处理室100的底壁120上的溅射沉积物的沉积。护板150包括圆柱形外部带314其具有的直径大小包围溅射靶材140的溅射表面142和衬底支架130。外部带314具有顶端316和底端318。顶端316具有径向向外的与溅射靶材140的倾斜外表面322相邻的锥形表面。护板150还包括底平面324其从外部带314的底端318径向向内扩展以联接圆柱形内部带328,该内部带328至少部分地包围衬底支架130的外侧204。内部带328包含小于外部带314的高度,例如内部带328高度比外部带314小0.8倍。内部带328和外部带314之间的间隙,以及盖环212的外壁260b和内壁260a还分别用于阻止并限制等离子体进入该区域。
整体护板的外部带314、底板324和内部带328包括作为单片的整体独立结构。例如,整个护板150可以由300系列的不锈钢制成。这优于包括多个元件的现有护板,其通常需要两个或者三个分离层才能构成完整的护板,这给清洗时的拆卸护板带来的更大的难度和工作量。同时,单片护板150具有暴露在溅射沉积物中的连续的表面330,而没有更难清洗的交界面或者拐角。而且,单片护板150比多测护板受热更加均匀,这不管对于周期性维护期间的加热还是对于等离子体加热护板时的冷却过程都是非常有利的。单片护板150仅具有和热交换器330接触的一个受热界面。单片护板150在工艺循环期间还保护室壁108不收到溅射沉积。护板150还在靶材140区域(这里称之为“暗区”)产生波状缝隙以帮助成型等离子体同时避免在靶材140和室100之间产生辉光放电。
采用热交换器330冷却护板150以减小热扩散应力。由于暴露在衬底处理室中导致部分护板150可能会变得很热。过热的护板150产生热扩散,该热扩散使得在护板上形成的溅射沉积物从该护板上剥落并污染该衬底104。该热交换器330包括又金属构成的板332,诸如不锈钢。如图9所示,板332具有包括尺寸适于环绕圆柱形护板150的圆孔336的内周334,以及包括六边形边340的外周338。
热交换器330具有多边形导管334,来自流体源的流体从所述多边形导管334经过从而冷却板332。多边形导管334包括多个以多边形图案围绕圆形孔336互连的多个边344。从所述板332的外围的六边形边340开始在锐角处研磨边344a-h,该锐角为约20到45°。导管334还包括由盖板345a-c覆盖的通道342a-c,其中盖板345a-c位于板345a-c中的槽349a-c中用于密封接触面的椭圆形O圈。多边形导管334还具有用于容纳和传输热交换流体的入口346和出口348。入口346和出口348包括注入多路管350的通道352a和352b。
该热交换流体流过多边形导管330从而和护板150进行热交换并控制其温度。适用的热交换流体可以是水。对护板温度进行控制减少了等离子体环境中护板温度的扩散,限制了溅射沉积物从该护板上片状剥离。将该护板150固定到热交换器330上可以在所述护板和热交换器板之间提供更好的热传输。通过固件358将所述护板固定到热交换器上,并且这里,护板包括具有从其本身穿过的基本垂直开口的突出部分360。设计固件358的形状和尺寸使其经过突出部分360的开口362以将所述护板150固定在所述热交换器330上。优选地,该热交换器330在固定护板150的同时,与源线圈153和靶材140一体集成到室100上。在工艺期间水冷还可以对单片护板150提供更大的热稳定性。
溅射靶材140包括通常由高强度铝合金制成的背板370,该背板370支撑包括溅射表面142的溅射板374。靶材140的背板370通过隔离器144与室100分离并电绝缘,其中隔离器144通常由陶瓷材料构成,诸如氧化铝。溅射板374包括要溅射在衬底104上的高纯度溅射材料,诸如铝、钽、以及其他金属,通常纯度为99.99%或者更高。溅射板374包括与护板150的倾斜表面320相邻的具有倾斜边缘322的周边,在二者之间支架限定了用于另一等离子体阻滞旋转曲径的缝隙380。
一方面,靶材140的背板包括超过溅射板374半径延伸的外围突出部分390。该外围突出部分390通过设置在隔离器144上支撑靶材140并可以固定到隔离器144或者室侧壁116上。外围突出部分390超出溅射板374的倾斜边缘322延伸并且包括设置于室100的隔离器344上的底脚部分392。外围突出部分390包括内部凸起394,设计内部凸起394的形状和尺寸从而减小沉积在隔离器144和护板150上的溅射沉积物。凸起394于前面的槽396接合起来减少等离子体形成以及减少溅射工艺沉积在室侧壁108、隔离器144和热交换器330等不希望沉积的区域沉积量。设计凸起394的形状、尺寸并定位以限制等离子体和溅射物质流过或者移动进过靶材140和隔离器144之间的间隙。具体地,凸起394阻止低角度溅射沉积物进入靶材和隔离器之间的间隙。凸起394包括高度为约1.5到约2mm的曲线截面。
处理配件200和靶材140的各种元件明显提高了处理循环的数量以及不必为了清洗拆除处理配件的情况下该处理配件在室中的工艺工作时间。通过减少在衬底周围难于清洗的元件上溅射沉积物的数量来实现这一点。设计处理配件200和靶材140的元件使其允许在溅射区域106具有提高的功率和压力以通过降低暗区的温度来获得更高的沉积产量,其中该暗区靠近护板150的顶端并靠近靶材140。同时通过采用热交换器330也提高了护板150的热均匀性。此外,设计处理配件200使得在必须更换配件200并因此执行维护循环以前允许至少在室100中沉积大于85%的铝。从而使得室的正常工作时间得到了明显改善并提高了工艺产量。
图10为在铝沉积工艺中作为到衬底104和支架130的距离的函数,形成在沉积环208和盖环212上沉积物厚度等比例尺寸处理配件获得的模拟结果曲线图。该模拟程序为PVD ProTM程序并且其应用了要沉积的金属类型以及靶材和其他室元件的几何尺寸。该模型可以比较对盖环212和沉积环208形状和位置的不同结构的进行比较。这使得对于在沉积环208的槽230以及盖环212的边缘252的可视区域上最小化铝沉积物进行优化。通过运行原始硬件对模拟的准确性进行确定,并且还可以通过模拟公知性能的几何尺寸以获得这里所提到的设计。可以看到改变室元件的形状和设计结构以及他们之间的空间和分析可以明显改变在元件表面上沉积材料的厚度。此外,在沉积环上沉积的沉积速率随着到衬底中心的距离的增加基本保持不变,如曲线图x轴的0.5和1.5之间的同一角度线性部分所述。在不同的结构中净沉积量会发生垂直变化,但是曲线的形状实质上没有变化。
已经参照某些优选方案对本发明进行了描述,但是,也存在其他方案。例如,处理配件200和环组件202也可以用在其他类型应用中,这对于普通技术人员来说是显而易见的,例如用于蚀刻、CVD室。沉积环208、盖环212、护板150和防升托架270还可以采用其他形状和结构。因此,所附权利要求的精神和范围不应该限于这里所包含的优选实施方式的描述。
Claims (36)
1.一种在衬底处理室中位于衬底支架周围的沉积环,在该处理室中形成处理气体的等离子体以处理衬底,所述支架包括终止于所述衬底悬伸边前的外壁,并且所述沉积环包括:
(a)围绕所述支架外壁的环形带,所述环形带包括:
(i)从所述环形带横向延伸处的内唇,其基本上和所述支架的外壁平行,并且在所述衬底悬伸边的下部终止;
(ii)凸起的脊;
(iii)位于所述内唇和凸起的脊之间的内部开口通道,并至少部分沿所述衬底的悬伸边延伸;以及
(iv)所述凸起的脊的径向向外的壁架。
2.根据权利要求1所述的沉积环,其特征在于,所述凸起的脊沿着所述带的中心部分延伸并具有平坦顶面,在使用时,所述平坦顶面与盖环间隔一定距离以在二者之间形成弯曲间隙。
3.根据权利要求1所述的沉积环,其特征在于,所述内部通道具有与所述内唇接合的第一圆角以及与所述凸起的脊接合的倾斜表面。
4.根据权利要求1所述的沉积环,其特征在于,还包括位于所述凸起的脊和所述壁架之间的U型槽。
5.根据权利要求1所述的沉积环,其特征在于,所述环形带包括不锈钢。
6.一种至少部分覆盖具有凸起的脊和内部开口通道的沉积环的盖环,在衬底处理室中所述覆盖和沉积环位于衬底支架的周围,在所述衬底处理室形成处理气体的等离子体从而处理所述衬底,所述支架包括终止于所述衬底悬伸边的外壁,并且所述盖环包括:
(a)环形楔,其包括位于所述沉积环的凸起的脊上的底脚以及进入叠加在所述沉积环的内部开口通道的突出边的倾斜表面;以及
(b)一个或者多个从环形楔向下延伸的圆柱形壁。
7.根据权利要求6所述的盖环,其特征在于,所述沉积环的凸起的脊和所述盖环的突出边限定了阻止等离子体通过所述间隙的弯曲间隙。
8.根据权利要求6所述的盖环,其特征在于,所述盖环的环形楔的倾斜表面相对于和所述衬底平面垂直的轴呈倾斜角度,所述角度至少为约60°。
9.根据权利要求6所述的盖环,其特征在于,所述盖环包括沿所述底脚径向向外设置的一对圆柱形壁。
10.根据权利要求6所述的盖环,其特征在于,所述圆柱形壁包括内壁和外壁,所述内壁高度小于所述外壁高度。
11.根据权利要求6所述的盖环,其特征在于,所述盖环的突出边缘的倾斜顶面端部为圆形边缘形状。
12.根据权利要求11所述的盖环,其特征在于,所述盖环的突出边包括平坦底面。
13.根据权利要求11所述的盖环,其特征在于,所述突出边还包括位于圆形边缘前的凸起的脊。
14.根据权利要求11所述的盖环,其特征在于,所述凸起的脊具有与下面沉积环的表面形状相匹配以及与其接合的外部形状。
15.根据权利要求6所述的盖环,其特征在于,所述盖环包括钛。
16.一种在衬底处理室中位于衬底支架周围的环组件,在该处理室中形成处理气体等离子体以处理所述衬底,所述支架包括中止于所述衬底悬伸边的外壁,并且所述环组件包括:
(a)围绕所述支架外壁的环形带,所述环形带包括:
(i)从所述环形带横向延伸处的内唇,其基本上和所述支架的外壁平行,并且在所述衬底悬伸边的下部终止;
(ii)凸起的脊;
(iii)位于所述内唇和凸起的脊之间的内部开口通道,并至少部分沿所述衬底的悬伸边延伸;以及
(iv)所述凸起的脊向外呈放射状的壁架;以及
(b)至少部分覆盖所述沉积环的盖环,所述盖环包括:
(i)环形楔,其包括位于所述沉积环的凸起的脊上的底脚以及进入与所述沉积环叠加的内部开口通道的突出边的倾斜表面;以及
(ii)一个或者多个从环形楔向下延伸的圆柱形壁,从而所述凸起的脊和所述盖环限定了阻止等离子体通过所述间隙的弯曲间隙。
17.一种在衬底处理室中用于在衬底支架周围保持沉积环的固定组件,所述沉积环包括具有固定柱的外围凹槽,并且所述固定组件包括:
(a)包括两端的限制梁,所述限制梁可以与所述衬底支架连接;
(b)防升托架包括:
(i)包括用于容纳限制梁一端的直通通道的部件;
(ii)与所述部件连接固定环,设计所述固定环的尺寸使其在所述沉积环的外围凹槽中的固定柱上部滑动,
从而,在使用时,所述直通通道在限制梁上滑动使得所述固定环环绕所述固定柱,所述固定柱允许使所述部件的重量稳定地将所述沉积环固定到支架上。
18.根据权利要求17所述的固定组件,其特征在于,还包括位于所述防升托架和限制梁之间的陶瓷隔离器。
19.根据权利要求18所述的固定组件,其特征在于,所述陶瓷隔离器包括氧化铝。
20.一种在衬底处理室中可以围绕与衬底支架相对的溅射靶材的溅射表面的整体护板,其可以减少沉积在支架和室侧壁上的溅射沉积物,所述护板包括:
(a)具有围绕溅射靶材的溅射表面和所述衬底支架的直径尺寸的圆柱形外部带,所述外部带具有顶端和底端,所述顶端具有与所述溅射靶材相邻沿径向向外的锥形表面;
(b)从所述外部带底端向内径向延伸的底板;
(c)与底板接合的圆锥形内部带,并且其至少部分围绕所述衬底支架的外围边缘。
21.根据权利要求20所述的护板,其特征在于,所述外部带、底板和内部带包括整体结构。
22.根据权利要求21所述的护板,其特征在于,所述内部带的高度低于所述外部带。
23.一种用于在衬底处理室中冷却圆柱形护板的热交换器,所述热交换器包括:
(a)一板,其内周包括设计尺寸适于围绕圆柱形护板的圆孔;以及
(b)位于所述板中的多边形导管,在所述导管中流过热交换液体,所述多边形导管包括以多边形图案形状围绕所述圆孔互连的多个分支,并且所述多边形导管包括入口和出口。
24.根据权利要求23所述的热交换器,其特征在于,所述板包括包含六边形边的外周并且所述支柱在锐角处钻透所述六边形。
25.根据权利要求24所述的热交换器,其特征在于,所述锐角为约20°到约45°。
26.一种在衬底处理室中可以固定在护板内以及位于隔离器上的溅射靶材,所述溅射靶材包括:
(a)由要溅射到所述衬底上的溅射材料构成的溅射板,所述溅射板包括倾斜边缘;
(b)用于支撑所述溅射板的背板,所述背板包括超出所述溅射板的倾斜边缘延伸的外围突出部分,所述外围突出部分包括在该室中位于所述隔离器上的底脚,以及内部凸起,设计所述内部凸起的形状和尺寸以减少沉积在所述隔离器和护板上的溅射沉积物。
27.根据权利要求26所述的靶材,其特征在于,所述凸起包括高度为约1.5mm到约2mm的曲线截面。
28.根据权利要求26所述的靶材,其特征在于,所述背板包括高强度的铝合金。
29.根据权利要求26所述的靶材,其特征在于,所述溅射板包括含有铝的溅射表面。
30.一种在衬底处理室中可以围绕与衬底支架相对的溅射靶材的溅射表面的处理配件,其可以减少沉积在支架和室侧壁上的溅射沉积物,所述支架包括中止于所述衬底悬伸边下部的外壁和限制梁,所述处理配件包括:
(a)包括围绕所述支架的环形带的沉积环,所述沉积环具有从所述环形带横向延伸的内唇,其基本上和所述支架的外壁平行,并且在所述衬底悬伸边的下部终止;凸起的脊;位于所述内唇和凸起的脊之间的内部开口通道,并至少部分沿所述衬底的悬伸边延伸;所述凸起的脊径向向外的壁架;以及具有固定柱的外围凹槽;
(b)至少部分覆盖沉积环的盖环,所述盖环包括环形楔,其包括位于所述沉积环的凸起的脊上的底脚以及并具有进入叠加在所述沉积环的内部开口通道的突出边的倾斜表面;以及一个或者多个从环形楔向下延伸的圆柱形壁;以及
(c)防升托架包括用于容纳限制梁一端的直通通道的部件和与固定环,设计所述固定环的尺寸使其在所述沉积环的外围凹槽中的固定柱上部滑动。
31.根据权利要求30所述的处理配件,其特征在于,所述沉积环还包括所述凸起的脊径向向外设置并沿所述环形带横向延伸的外唇。
32.根据权利要求30所述的处理配件,其特征在于,所述盖环的环形楔的倾斜表面与垂直于衬底的方向呈倾斜角度,所述角度至少为约60°。
33.根据权利要求30所述的处理配件,其特征在于,所述盖环包括内壁和外壁,所述内壁高度小于所述外壁高度。
34.根据权利要求30所述的处理配件,其特征在于,所述盖环的突出边的倾斜顶面端部为圆形边缘形状并具有平坦的底面。
35.根据权利要求30所述的处理配件,其特征在于,所述防升托架的部件包括用于容纳将所述部件固定到支架上的固件的垂直通孔。
36.根据权利要求30所述的处理配件,其特征在于,还包括整体护板,包括:
(a)具有围绕溅射靶材的溅射表面和所述衬底支架的直径尺寸的圆柱形外部带,所述外部带具有顶端和底端,所述顶端具有与所述溅射靶材相邻沿径向向外的锥形表面;
(b)从所述外部带底端向内径向延伸的底板;
(c)与底板接合的圆锥形内部带,并且其至少部分围绕所述衬底支架的外围边缘。
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-
2006
- 2006-10-27 US US11/553,982 patent/US9127362B2/en active Active
- 2006-10-31 TW TW095140305A patent/TWI435941B/zh active
- 2006-10-31 CN CN201310053011.1A patent/CN103147049B/zh active Active
- 2006-10-31 DE DE102006051443A patent/DE102006051443A1/de not_active Withdrawn
- 2006-10-31 CN CN2006101366947A patent/CN101089220B/zh active Active
- 2006-10-31 KR KR1020060106729A patent/KR101322342B1/ko active IP Right Grant
- 2006-10-31 JP JP2006296371A patent/JP2007146290A/ja active Pending
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- 2015-09-07 US US14/846,951 patent/US10347475B2/en active Active
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- 2019-05-10 US US16/409,757 patent/US11658016B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
KR101394085B1 (ko) | 2014-05-13 |
US20150380223A1 (en) | 2015-12-31 |
TW200730645A (en) | 2007-08-16 |
US20190267220A1 (en) | 2019-08-29 |
JP2007146290A (ja) | 2007-06-14 |
KR20070046765A (ko) | 2007-05-03 |
CN101089220B (zh) | 2013-03-27 |
KR20130062955A (ko) | 2013-06-13 |
DE102006051443A1 (de) | 2007-05-24 |
CN103147049A (zh) | 2013-06-12 |
US11658016B2 (en) | 2023-05-23 |
US9127362B2 (en) | 2015-09-08 |
KR101322342B1 (ko) | 2013-10-28 |
CN103147049B (zh) | 2015-04-08 |
TWI435941B (zh) | 2014-05-01 |
US10347475B2 (en) | 2019-07-09 |
US20070102286A1 (en) | 2007-05-10 |
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