WO2012040986A1 - 等离子体加工设备 - Google Patents

等离子体加工设备 Download PDF

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Publication number
WO2012040986A1
WO2012040986A1 PCT/CN2010/080121 CN2010080121W WO2012040986A1 WO 2012040986 A1 WO2012040986 A1 WO 2012040986A1 CN 2010080121 W CN2010080121 W CN 2010080121W WO 2012040986 A1 WO2012040986 A1 WO 2012040986A1
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WIPO (PCT)
Prior art keywords
cavity
plasma processing
processing apparatus
insulator
conductive sub
Prior art date
Application number
PCT/CN2010/080121
Other languages
English (en)
French (fr)
Inventor
陈鹏
赵梦欣
韦刚
张良
杨柏
吴桂龙
丁培军
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to SG2013022827A priority Critical patent/SG189129A1/en
Priority to KR1020137010511A priority patent/KR101456810B1/ko
Priority to US13/876,133 priority patent/US10984993B2/en
Publication of WO2012040986A1 publication Critical patent/WO2012040986A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields

Definitions

  • the present invention relates to the field of semiconductor processing technology, and in particular, to a plasma processing apparatus. Background technique
  • Plasma processing equipment is widely used in today's manufacturing processes such as semiconductor integrated circuits, solar cells, and flat panel displays.
  • Plasma processing equipment that has been widely used in the industry are of the following types: DC discharge type, capacitive coupling (CCP) type, inductive coupling (ICP) type, and electron cyclotron resonance (ECR) type.
  • DC discharge type DC discharge type
  • CCP capacitive coupling
  • ICP inductive coupling
  • ECR electron cyclotron resonance
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • Magnetron sputtering technology is the most widely used technology in the PVD process.
  • the technology is to connect a high-power DC power source to a target (for example, a metal or an oxide, typically Cu, Ta, etc.), and bombard the target by a plasma generated by a DC power source to deposit the material of the target on the workpiece to be processed.
  • a film layer is formed on the wafer.
  • a magnetron is disposed above the target to improve sputtering efficiency.
  • the inductor coil is used to strengthen the plasma density, and the lower electrode bias (Bias) can be further improved. Effectively attract ions to deposit or etch wafers to meet process requirements.
  • FIG. 1 is a schematic structural view of a current PVD device.
  • the reaction chamber can be composed of two parts, a side wall 1 and a bottom wall 2, a target 3 is disposed at the top of the reaction chamber, a magnetron 4 is located above the target 3, and the first RF power source 41 passes through the first matching unit. 42 is connected to the coil 7, and the second RF power source 43 is connected to the electrostatic chuck 8 via the second matching unit 44.
  • the DC power source 6 applies DC power to the target 3 to generate a plasma, and attracts ions in the plasma to bombard the target 3, so that the material of the target 3 can be deposited on the wafer located on the electrostatic chuck 8 after being sputtered (FIG. 1) Not shown).
  • the RF power applied to the electrostatic chuck 8 can generate a radio frequency self-bias that can attract ions to improve the aperture. Fill effect.
  • the coil 7 adds the RF power of the first RF power source 41 to the reaction chamber to further increase the plasma density and improve the deposition coverage of the target material on the wafer.
  • the problem is that since the coil 7 is disposed inside the reaction chamber and the coil 7 has a high RF bias, this will cause the coil 7 to be easily sputtered by the plasma. In order to prevent the coil from being sputtered to introduce impurities, it is necessary to make the coil 7 and the material of the target 3 the same, thereby affecting the flexibility of material selection and increasing the equipment cost. More seriously, the coil 7 is in the reaction chamber, and a large amount of particles accumulate on the surface, which is easy to cause contamination of the wafer to be processed, and at the same time reduces the effective utilization of the target. Summary of the invention
  • the present invention provides a plasma processing apparatus which at least solves the problem of contamination of a wafer due to the formation of particles in the sputtering process during the sputtering process.
  • the problem of target utilization can be solved, and the effective utilization rate of the target can be improved.
  • the present invention provides a plasma processing apparatus comprising: a cavity and a target on the cavity, the target being positioned on the cavity such that a surface of the target and a processing area in the cavity Contact,
  • the cavity includes a superposed insulator cavity and a first conductive sub-cavity, the first conductive sub-cavity is located under the insulator cavity, the insulator cavity is made of an insulating material, the first conductive sub- ⁇ The cavity is made of a metal material;
  • a Faraday shield is disposed in the insulator cavity, the Faraday shield is made of a metal material, or is made of an insulating material coated with a conductive coating, the Faraday shield having at least one slit;
  • An outer side of the insulator cavity is wound with an inductor coil.
  • the insulator cavity is a middle pass cylinder.
  • the Faraday shield is a middle pass cylinder.
  • the plasma processing apparatus further includes: a first shielding portion disposed at a junction of the flange and the Faraday shield and extending in a direction toward the first conductive sub-cavity.
  • the plasma processing apparatus further includes: a spacer member disposed between the target and the insulator cavity.
  • the plasma processing apparatus further includes: a second shielding portion disposed at a junction of the insulating sub-cavity and the isolation member and extending in a direction away from the insulator cavity.
  • the plasma processing apparatus further includes a second conductive sub-cavity disposed between the isolation member and the insulator cavity.
  • the plasma processing apparatus further includes a third shielding portion disposed at a junction of the second conductive sub-cavity and the isolation member, and suspended to extend the connection between the insulator cavity and the second conductive sub-cavity At the office.
  • the plasma processing apparatus further includes: a coil protection cover, the coil protection cover being disposed outside the induction coil.
  • the slit of the Faraday shield of the plasma processing apparatus is filled with an insulating material.
  • the plasma processing apparatus of the plasma processing apparatus is a physical vapor deposition apparatus.
  • the Faraday shield functions as a Faraday shield
  • the inductor coil, the insulator cavity and the Faraday shield constitute an inductor coil system
  • the inductance of the Faraday shield is small compared to the conventional metal cavity.
  • the coil (see Figure 1), at the same input power, the voltage on the Faraday shield will be lower, thus making the RF bias on the inner surface of the Faraday shield lower, which can effectively prevent the metal during the process.
  • the deposition of ions such as ions on the Faraday shield, and the inductor coil is located outside the cavity, thereby preventing the coil from being sputtered
  • the contamination of the wafer by the particles prevents the useless loss of the target material and improves the utilization of the target.
  • the lower bias voltage allows the Faraday shield to attract ion bombardment and become a lossy component, thereby increasing the operational life of the device and reducing costs.
  • FIG. 1 is a schematic structural view of a current PVD device
  • FIG. 2 is a schematic structural view of a plasma processing apparatus of Embodiment 1;
  • Figure 3 is a cross-sectional view of Figure 2 along the diameter of the insulator cavity
  • FIG. 4 is a schematic perspective view of the Faraday bucket of FIG. 2;
  • FIG. 5 is a schematic structural view of a plasma processing apparatus in Embodiment 2;
  • FIG. 6 is a schematic structural view of a plasma processing apparatus according to another embodiment of the present invention. detailed description
  • the particle contamination of the reaction chamber in the plasma processing equipment is one of the important reasons that affect the quality of the process.
  • the particle pollution is more serious.
  • the inductor inside the chamber has a high RF bias, which makes it extremely easy to be sputtered by the plasma. This is one of the sources of contaminated particles inside the reaction chamber.
  • the coil can be selected to be the same material as the target. However, it affects the flexibility of material selection and increases equipment costs.
  • the present invention provides a plasma processing apparatus in which an inductor coil is disposed inside a reaction chamber, and a built-in Faraday shield is used to lower the RF bias voltage, thereby effectively preventing deposition of the target ion on the inner surface of the Faraday shield.
  • the plasma processing apparatus includes: a cavity 20 and a top cover 25 on the cavity 20.
  • the cavity 20 has a cylindrical shape, and includes an insulator cavity 21 which is superposed and fixedly connected, a first conductive sub-cavity 22 and a through-cylinder in the insulator cavity 21; the first conductive sub-cavity 22 is located below the insulator cavity 21, It is a cylindrical member having a bottom wall; the top cover 25 is located above the insulator cavity 21.
  • the top cover 25, the insulator cavity 21 and the first conductive sub-cavity 22 constitute a reaction chamber of the plasma processing apparatus.
  • the insulator cavity 21 is an insulating material, preferably ceramic or quartz; the first conductive sub-cavity 22 is a metallic material, preferably stainless steel or aluminum. The first conductive sub-cavity 22 is grounded.
  • the entirety of the top cover 25 can serve as a metal target, and the metal target 25 (i.e., the top cover 25) is provided with a magnetron 27 to which DC power is applied to the metal target.
  • An electrostatic chuck 29 is disposed at the bottom of the reaction chamber opposite the metal target for placing a wafer to be processed (not shown).
  • a heating device or a cooling device may be included in the electrostatic chuck 29.
  • the center or edge of the top cover 25 is provided with an air inlet (not shown) for inputting a process gas into the reaction chamber, the bottom of the first conductive sub-cavity 22.
  • the wall is provided with an exhaust port (not shown) which may be located around the electrostatic chuck for discharging residual gas out of the reaction chamber.
  • the outer side of the insulator cavity 21 is surrounded by an inductor 13 , and the number of turns of the inductor 13 can be 1 ⁇ or more.
  • the inductor 13 is connected to the first RF power source 14 through the first matching unit 15 to connect the first RF power source 14 .
  • the RF power delivered by the first matcher 15 is coupled into the reaction chamber to generate a plasma.
  • the frequency of the first RF power source 14 can be 2 MHz or 13 MHz.
  • a coil protection cover 18 is further disposed on the outside of the inductor coil 13 to prevent the electromagnetic field energy of the inductor coil 13 from being affected by radiation from the outside.
  • a Faraday shield 10 made of a metal material is provided inside the insulator cavity 21.
  • the shape of the Faraday shield is the same as that of the insulator cavity 21.
  • the Faraday shield 10 is also a middle pass cylinder, specifically called a Faraday barrel, and its radius is slightly smaller than the radius of the insulator cavity 21.
  • the position of the Faraday bucket 10 in the reaction chamber corresponds to the position of the inductor coil 13 outside the insulator cavity 21.
  • the Faraday shield 10 can have other shapes.
  • the lower edge of the insulator cavity 21 (i.e., the position adjacent to the first conductive sub-cavity 22) has a flange 211 facing the inside of the insulator sub-chamber 21 for carrying the Faraday barrel 10, and the Faraday barrel 10 is mounted on the flange 211.
  • the flange 211 may be a continuous ring shape or a plurality of protrusions spaced along the inner side of the insulating sub-cavity to support the Faraday barrel 10.
  • the Faraday barrel 10 may be mounted inside the insulator cavity by other means, for example, by fixing the Faraday barrel to the inside of the insulator cavity 21 by bolting.
  • FIG. 3 is a cross-sectional view of FIG. 2 along the diameter direction of the insulator cavity
  • FIG. 4 is a schematic perspective view of the Faraday bucket of FIG.
  • the Faraday bucket 10 has at least one slit 101.
  • the Faraday bucket 10 is a discontinuous metal bucket.
  • the Faraday bucket 10 is completely broken. This structure can effectively prevent eddy current loss and heat generation.
  • the slit 101 is disposed along the axial direction of the Faraday barrel 10.
  • the Faraday bucket 10 functions as a Faraday shield, and the inductor coil 13, the insulator cavity 21 and the Faraday bucket 10 constitute an inductor coil system, since the inductance of the Faraday bucket 10 is relatively Small, compared to the coil of the metal cavity in the conventional technology (see Fig. 1), the voltage on the Faraday barrel 10 is lower at the same input power, so that the RF bias on the inner surface of the Faraday barrel 10 is made.
  • the lower one can effectively prevent the deposition of the metal particles such as metal ions on the Faraday barrel 10, can avoid the contamination of the wafer by the sputtering of the coil, and prevent the useless loss of the target material, thereby improving the utilization rate of the target.
  • the lower bias voltage causes the Faraday bucket 10 to not attract ion bombardment and become a lossy part, thereby increasing the operational life of the apparatus and reducing costs.
  • the first conductive sub-cavity 22 serves as a grounding end of the radio frequency and the direct current loop to ensure normal plasma ignition and maintenance.
  • the slit 101 is filled with an insulating material 30, and the insulating material may be ceramic or quartz, so that the sputtered metal ions in the target are prevented from being deposited on the inner wall of the insulator cavity 21 outside the Faraday barrel to prevent metal ion deposition. In severe cases, the slot of the Faraday bucket 10 is short-circuited.
  • the insulating material is preferably ceramic or the like which is installed at the slit of the Faraday barrel 10 to ensure that the covering of the sputtered metal particles does not cause a short circuit of the slit.
  • the Faraday bucket 10 is not limited to being made of a metal material, but may be made of an insulating material whose surface is plated with a conductive coating.
  • the plasma processing apparatus further includes: a first shield portion 31 and/or a second shield portion 32.
  • the first shielding portion 31 is disposed at a junction of the flange 211 and the Faraday barrel 10, and extends in a direction toward the first conductive sub-cavity 22.
  • the first shielding portion 31 is annular and along the edge thereof.
  • the cross section in the radial direction is of the "L" type, and one end is overlapped on the flange 211 of the insulator cavity 21, and the suspended extension blocks the opening of the insulator cavity 21 and the first conductive subcavity 22, thus
  • the metal ions can be prevented from being deposited at the slits of the insulator cavity 21 and the first conductive sub-cavity 22 to cause electrical connection, thereby ensuring that the Faraday barrel 10 maintains a stable floating potential when the plasma is ignited.
  • the second shielding portion 32 is disposed at a junction of the insulator cavity 21 and the spacer member 26, and is suspended in a direction toward the insulator cavity 21.
  • the second shielding portion is annular, and the cross section along the radial direction is "L" type. a suspended extension that blocks the junction of the insulator cavity 21 and the isolation member 26, Obviously, the second shielding portion 32 is similar in effect to the first shielding portion 31, and can prevent metal ions from being deposited at the slits of the insulator cavity 21 and the partition member 26 to cause electrical connection, thereby ensuring that the Faraday barrel 10 is ignited in the plasma. Maintain a stable floating potential.
  • the first shielding portion 31 is preferably made of a material such as ceramics, and the second shielding portion 32 is preferably a metal material such as aluminum.
  • the partitioning member 26 is disposed between the second shielding portion 32 and the top cover 25, and the partitioning member 26 is made of an insulating material to maintain electrical insulation between the top cover 25 and the second shielding portion 32, so that the second shielding portion 32 has an independent potential.
  • An isolation member is further disposed between the top cover 25 and the insulator cavity 21, and more specifically, the isolation member 26 is located between the second shielding portion 32 and the top cover 25 to isolate the top cover 25 from the second shielding portion 32. Insulation ensures that the process gas in the chamber can illuminate normally.
  • the plasma processing apparatus of the present invention may further comprise a second conductive sub-cavity, i.e., stacked by three sub-cavities, as specifically illustrated in the following embodiments.
  • Fig. 5 is a schematic structural view of a plasma processing apparatus in the embodiment. As shown, the plasma processing apparatus further includes a second conductive sub-cavity 23 superposed on top of the insulator cavity 21, and the second conductive sub-cavity 23 is made of a metal material.
  • the plasma processing apparatus is composed of the insulator chamber 21, the first conductive sub-cavity 22 and the second conductive sub-cavity 23 which are disposed in a superimposed manner; the first conductive sub-cavity 22 located in the middle is a ceramic material, and The upper and lower second conductive sub-cavities 23 and the first conductive sub-cavity 22 are made of a metal material, the first conductive sub-cavity 22 is located under the insulator cavity 21, and the first conductive sub-cavity 22 is a cylinder having a bottom wall.
  • the second conductive sub-cavity 23 is located above the insulator cavity 21, and the top cover 25 is located above the second conductive sub-cavity 23, the top cover 25, the insulator cavity 21, the first conductive sub-cavity 22 and the second
  • the electron-conducting cavities 23 together form the reaction chamber of the plasma processing apparatus.
  • the insulator cavity 21 and the second conductive sub-cavity 23 are hollow cylinders having substantially the same radius, and the heights thereof may be different or the same according to design requirements.
  • the plasma processing apparatus further includes a third shielding portion 33 disposed on the second conductive body
  • the junction of the cavity 23 and the spacer member 26 extends and extends to the junction of the insulator cavity 21 and the second conductive sub-cavity 23,
  • the third shielding portion 33 is cylindrical, and the cross section in the radial direction is also "L"-shaped, one end is installed at the junction of the isolation member 26 and the second conductive sub-cavity 23, and the suspended extension blocks the connection between the insulator cavity 21 and the second conductive sub-cavity 23, thereby preventing metal ions.
  • the third shielding portion 33 is preferably a metal material such as aluminum.
  • the spacer member 26 is located between the second conductive sub-cavity 23 and the top cover 25. More specifically, the spacer member 26 is located between the third shielding portion 33 and the top cover 25, thereby the top cover 25 and the second conductive sub-cavity 23 (and the third shielding portion 33) isolating the insulation to ensure that the second conductive sub-cavity 23 has an independent potential, and the process gas in the cavity can normally illuminate.
  • the structure and the position of the inductor coil and the Faraday shield 10 in the inductive coil system are the same as those in the first embodiment, and will not be described herein.
  • the coil protection cover 18 is made of a metal material, and the second conductive sub-cavity 23 and the first conductive sub-cavity 22 are electrically connected to each other and grounded through the first conductive sub-cavity 22, and the second conductive sub-cavity 23 is also Can be grounded separately.
  • a grounding member that is, a first conductive sub-cavity 22 and a second conductive sub-cavity 23 are provided on the upper and lower sides of the Faraday shield 10 to ensure plasma ignition and retention. stable.
  • shielding members i.e., the first shielding portion 31 and the third shielding portion 33, to ensure that the Faraday shield 10 maintains a stable floating potential when the plasma is ignited.
  • the RF power transmitted by the first RF power source 14 and the first matcher 15 is coupled into the chamber to generate a high density plasma.
  • the frequency of the first RF power source 14 can be 2 MHz or 13 MHz.
  • the second RF power source 16 couples the RF power to the electrostatic chuck 29 (wafer base) through the second matcher 17 to generate a radio frequency bias.
  • the plasma processing apparatus may omit the second RF power source and the second matcher.
  • the electrostatic chuck 29 is directly grounded, and the first conductive sub-cavity 22 and the second guide
  • the electronic cavity 23 is grounded and the device is used in processes that do not require RF bias.
  • PVD device for example, a magnetron sputtering device
  • inductor coil for example, a magnetron sputtering device
  • it can also be a plasma etching apparatus or a plasma chemical vapor deposition apparatus.
  • plasma etching apparatus for example, a plasma etching apparatus or a plasma chemical vapor deposition apparatus.

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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Description

等离子体加工设备
技术领域
本发明涉及半导体加工技术领域， 特别涉及一种等离子体加工设备。 背景技术
等离子体加工设备广泛用于当今的半导体集成电路、 太阳能电池、 平板 显示器等制造工艺中。产业上已经广泛使用的等离子体加工设备有以下类型： 例如， 直流放电型， 电容耦合（CCP )型， 电感耦合（ICP )型以及电子回旋 共振 (ECR)型。 这些类型的等离子体加工设备目前被应用于物理气相沉积 ( PVD )、 干法刻蚀以及化学气相沉积（CVD )等工艺过程中。
在 PVD工艺过程中， 磁控溅射技术是现今最广泛釆用的技术。 该技术 是将高功率直流电源连接至靶（例如为金属或氧化物，典型的为 Cu、 Ta等）， 通过直流电源产生的等离子体对靶进行轰击， 从而将靶的材料沉积在待加工 的晶片上形成膜层。 此外， 靶上方还设置有磁控管， 以提高溅射效率。
在当前的先进工艺中， 特别是集成电路的 PVD工艺中， 为了使得孔隙 覆盖的正形性（Conformal )提高， 釆用电感线圈来加强等离子体密度， 使下 电极偏压（Bias )能够更有效地吸引离子沉积或刻蚀晶片， 以满足工艺要求。
图 1为目前一种 PVD设备的结构示意图。 如图所示， 反应腔室可由侧 壁 1和底壁 2两部分组成， 靶 3设置于反应腔室的顶部， 磁控管 4位于靶 3 的上面， 第一射频电源 41通过第一匹配器 42与线圈 7连接， 第二射频电源 43通过第二匹配器 44与静电卡盘 8连接。直流电源 6将直流功率施加至靶 3 上， 产生等离子体， 并吸引等离子体中的离子轰击靶 3 , 使靶 3的材料被溅 射后能够沉积在位于静电卡盘 8的晶片 （图 1中未示出）上。 再者， 施加在 静电卡盘 8上的射频功率能够产生射频自偏压， 可以吸引离子， 以改善孔隙 填充效果。线圈 7将第一射频电源 41的射频功率加入反应腔室内， 以进一步 增加等离子体密度， 提高靶的材料在晶片上的沉积覆盖效果。
然而问题在于， 由于线圈 7设置在反应腔室内部， 而且线圈 7具有很高 的射频偏压， 这将导致线圈 7极易被等离子体溅射。 为避免线圈被溅射引入 杂质， 需要使得线圈 7与靶 3的材料相同， 因此影响了材料选择的灵活性并 增加了设备成本。 更为严重的是， 该线圈 7在反应腔室内， 其表面会积累很 多颗粒， 容易对待加工的晶片造成污染， 同时降低了靶的有效利用率。 发明内容
本发明提供一种等离子体加工设备， 至少可以解决由于线圈表面在溅射 过程中形成颗粒导致对晶片的污染的问题。
进一步可以解决靶利用率的问题， 提高靶的有效利用率。
为解决上述问题， 本发明提供一种等离子体加工设备， 包括： 腔体和所 述腔体上的靶， 所述靶定位在所述腔体上使得所述靶的表面与腔体内的处理 区域接触，
所述腔体包括叠加设置的绝缘子腔体和第一导电子腔体， 所述第一导电 子腔体位于绝缘子腔体下面， 所述绝缘子腔体由绝缘材料制成， 所述第一导 电子腔体由金属材料制成；
所述绝缘子腔体内设有法拉第屏蔽件， 所述法拉第屏蔽件由金属材料制 成， 或者由镀有导电涂层的绝缘材料制成， 所述法拉第屏蔽件具有至少一个 开缝；
所述绝缘子腔体的外侧绕有电感线圈。
可选的， 所述绝缘子腔体为中通圓柱。
可选的， 所述法拉第屏蔽件为中通圓柱。
所述绝缘子腔体的下沿设置有朝向绝缘子腔体内侧的凸缘， 该凸缘用于 承载所述法拉第屏蔽件。 优选的， 所述的等离子体加工设备还包括： 第一遮挡部， 该第一遮挡部 设置于所述凸缘和法拉第屏蔽件的连接处， 并向第一导电子腔体的方向悬空 延伸。
优选的， 所述的等离子体加工设备还包括： 隔离部件， 该隔离部件设置 于所述靶和绝缘子腔体之间。
优选的， 所述的等离子体加工设备还包括： 第二遮挡部， 设置于所述绝 缘子腔体和隔离部件的连接处， 并向绝缘子腔体的方向悬空延伸。
优选的， 所述的等离子体加工设备还包括第二导电子腔体， 设置于所述 隔离部件和绝缘子腔体之间。
优选的， 所述的等离子体加工设备还包括第三遮挡部， 设置于所述第二 导电子腔体和隔离部件的连接处， 并悬空延伸至绝缘子腔体和第二导电子腔 体的连接处。
优选的， 所述的等离子体加工设备还包括： 线圈保护罩， 该线圈保护罩 设置于所述电感线圈的外部。
优选的， 所述的等离子体加工设备所述法拉第屏蔽件的开缝处填充有绝 缘材料。
优选的， 所述的等离子体加工设备所述等离子体加工设备为物理气相沉 积装置。 上述技术方案具有以下优点：
本发明实施例中， 法拉第屏蔽件起到法拉第屏蔽的作用， 而电感线圈、 绝缘子腔体和法拉第屏蔽件构成了电感线圈系统， 由于法拉第屏蔽件的电感 较小， 相对于传统技术的金属腔体内的线圈 （参见图 1 )来说， 在相同的输 入功率下， 法拉第屏蔽件上的电压会较低， 于是， 使得在法拉第屏蔽件内表 面的射频偏压较低， 可以有效阻止工艺过程中金属离子等粒子在法拉第屏蔽 件上的沉积， 而且电感线圈位于腔体的外侧， 因此能够避免线圈被溅射形成 颗粒对晶片的污染， 并防止靶材料的无用损耗， 提高了靶的利用率。
而且， 较低的偏压使得法拉第屏蔽件不会吸引离子轰击而成为损耗零 件， 从而可以提高设备的工作寿命， 并降低成本。 附图说明
通过附图所示， 本发明的上述及其它目的、 特征和优势将更加清晰。 在 全部附图中相同的附图标记指示相同的部分。 并未刻意按实际尺寸等比例缩 放绘制附图， 重点在于示出本发明的主旨。
图 1为目前一种 PVD设备的结构示意图；
图 2为实施例一等离子体加工设备的结构示意图；
图 3为图 2沿绝缘子腔体直径方向的截面图；
图 4为图 2中法拉第桶的立体结构示意图；
图 5为实施例二中等离子体加工设备的结构示意图；
图 6为本发明另一实施例中等离子体加工设备的结构示意图。 具体实施方式
为使本发明的上述目的、 特征和优点能够更加明显易懂， 下面结合附图 对本发明的具体实施方式做详细的说明。
在下面的描述中阐述了很多具体细节以便于充分理解本发明， 但是本发 明还可以釆用其他不同于在此描述的其它方式来实施， 因此本发明不受下面 公开的具体实施例的限制。
其次， 本发明结合示意图进行详细描述， 在详述本发明实施例时， 为便 于说明， 表示装置结构的剖面图会不依一般比例作局部放大， 而且所述示意 图只是示例， 其在此不应限制本发明保护的范围。 此外， 在实际制作中应包 含长度、 宽度及深度的三维空间尺寸。
为突出本发明的特点， 附图中没有给出与本发明的发明点必然直接相关 的部分。
目前， 等离子体加工设备中反应腔室的颗粒污染是影响工艺质量的重要 原因之一，在设有电感线圈的 PVD等离子体加工设备中，颗粒污染更为严重， 发明人研究发现， 设置在反应腔室内部电感线圈具有很高的射频偏压， 这将 导致其极易被等离子体溅射， 这是反应腔室内部污染颗粒的来源之一， 为避 免污染可以选择线圈与靶的材料相同， 但却影响了材料选择的灵活性并增加 设备成本。
基于上述缘由， 本发明提供一种等离子体加工设备， 将电感线圈设置在 反应腔室的内部， 并利用内置的法拉第屏蔽件降低射频偏压， 有效阻止靶离 子在法拉第屏蔽件内表面的沉积。 以下结合附图详细说明本发明所述等离子 体加工设备的一个具体实施例。
实施例一
图 2为本实施例中等离子体加工设备的结构示意图， 如图所示， 等离子 体加工设备包括： 腔体 20和腔体 20上的顶盖 25。
腔体 20为圓柱体形状， 包括叠加设置并且固定连接的绝缘子腔体 21、 第一导电子腔体 22和绝缘子腔体 21中通圓柱；第一导电子腔体 22位于绝缘 子腔体 21下面，为具有底壁的圓柱形部件； 顶盖 25位于绝缘子腔体 21的上 面。 顶盖 25、 绝缘子腔体 21和第一导电子腔体 22组成了等离子体加工设备 的反应腔室。
绝缘子腔体 21为绝缘材料， 优选为陶瓷或石英； 第一导电子腔体 22为 金属材料， 优选为不锈钢或者铝。 其中， 所述第一导电子腔体 22接地。
顶盖 25的整体可以作为金属靶， 金属靶 25 (即顶盖 25 )上设置有磁控 管 27 , 直流电源 28将直流功率施加到金属靶。 静电卡盘 29设置在反应腔 室的底部， 与金属靶相对， 用于放置待加工的晶片 （图中未示出）。 静电卡盘 29中可以包括加热装置或冷却装置。 顶盖 25的中央或者边缘设置有进气口 (图中未示出）， 用于向反应腔室中输入工艺气体， 第一导电子腔体 22的底 壁设置有排气口（图中未示出）， 可以位于静电卡盘的周围， 用于将残余气体 排出反应腔室。
绝缘子腔体 21的外侧围绕有电感线圈 13 , 电感线圈 13的匝数可以为 1 匝或 1匝以上， 电感线圈 13通过第一匹配器 15与第一射频电源 14连接，将 第一射频电源 14和第一匹配器 15传送来的射频功率耦合至反应腔室内以产 生等离子体。 第一射频电源 14的频率可以为 2MHz或 13MHz。
优选的， 电感线圈 13的外部还设有线圈保护罩 18, 用来防止电感线圈 13的电磁场能量不会对外界造成辐射影响。
绝缘子腔体 21内侧设有由金属材料制成的法拉第屏蔽件 10。 该法拉第 屏蔽件的形状与绝缘子腔体 21 的形状相同， 在本实施例中， 法拉第屏蔽件 10也为中通圓柱， 具体称为法拉第桶， 其半径比绝缘子腔体 21的半径略小。 法拉第桶 10在反应腔室内的位置对应于绝缘子腔体 21外侧的电感线圈 13 的位置。 本发明的其他实施例中， 所述法拉第屏蔽件 10可以为其他形状。
绝缘子腔体 21下沿 (即靠近第一导电子腔体 22的位置）具有朝向绝缘 子腔体 21内侧的凸缘 211 , 用于承载法拉第桶 10, 所述法拉第桶 10安装在 凸缘 211上。 该凸缘 211可以为连续的环形， 也可以为多个突出部， 沿着绝 缘子腔体的内侧间隔分布，起到支撑法拉第桶 10的作用。本发明的其他实施 例中， 也可以通过其他方式将法拉第桶 10安装在绝缘子腔体的内侧， 例如， 利用螺栓连接的方式将法拉第桶固定在绝缘子腔体 21内侧。
图 3为图 2沿绝缘子腔体直径方向的截面图， 图 4为图 2中法拉第桶的 立体结构示意图。如图所示，该法拉第桶 10具有至少一个开缝 101 ,换言之， 法拉第桶 10为非连续金属桶， 在开缝 101的位置法拉第桶 10完全断开， 这 种结构可以有效阻止涡流损耗和发热。 优选的， 所述开缝 101沿着法拉第桶 10的轴向设置。
本实施例中， 法拉第桶 10起到法拉第屏蔽的作用， 而电感线圈 13、 绝 缘子腔体 21和法拉第桶 10构成了电感线圈系统，由于法拉第桶 10的电感较 小， 相对于传统技术的金属腔体内的线圈 （参见图 1 )来说， 在相同的输入 功率下， 法拉第桶 10上的电压会较低， 于是， 使得在法拉第桶 10内表面的 射频偏压较低，可以有效阻止工艺过程中金属离子等粒子法拉第桶 10上的沉 积，能够避免线圈被溅射形成颗粒对晶片的污染，并防止靶材料的无用损耗， 提高了靶的利用率。
而且， 较低的偏压使得法拉第桶 10不会吸引离子轰击而成为损耗零件， 从而可以提高设备的工作寿命， 并降低成本。 其中， 第一导电子腔体 22作为 射频和直流回路的接地端， 能够保证正常的等离子体起辉和维持。
优选的，开缝 101内填充有绝缘材料 30,绝缘材料可以是陶瓷或者石英， 这样可以防止靶中被溅射出的金属离子沉积在法拉第桶外的绝缘子腔体 21 的内壁上，避免金属离子沉积严重时造成法拉第桶 10的开缝处短路。绝缘材 料优选为陶瓷等，其被安装在法拉第桶 10的开缝处， 能够保证被溅射金属粒 子的覆盖不会造成开缝的短路。
此外， 法拉第桶 10不限于由金属材料制成， 还可以由表面镀有导电涂 层的绝缘材料制成。
在本发明的优选实施例中， 等离子体加工设备还包括： 第一遮挡部 31 和 /或第二遮挡部 32。
如图 2所示， 第一遮挡部 31设置于凸缘 211和法拉第桶 10的连接处， 并向第一导电子腔体 22的方向悬空延伸， 该第一遮挡部 31为圓环形， 其沿 半径方向的剖面为 "L" 型， 一端搭接于绝缘子腔体 21的凸缘 211上， 悬空 的延伸部将绝缘子腔体 21和第一导电子腔体的 22开缝处遮挡， 这样一来， 可以防止金属离子沉积在绝缘子腔体 21和第一导电子腔体 22的开缝处而导 致电性连接， 保证法拉第桶 10在等离子体起辉时保持稳定的悬浮电位。
第二遮挡部 32设置于绝缘子腔体 21和隔离部件 26的连接处， 并向绝 缘子腔体 21的方向悬空延伸，该第二遮挡部为圓环形，其沿半径方向的剖面 为 "L" 型， 其悬空的延伸部将绝缘子腔体 21和隔离部件 26的连接处遮挡， 显然， 第二遮挡部 32与第一遮挡部 31的效果类似， 可以防止金属离子沉积 在绝缘子腔体 21和隔离部件 26的开缝处而导致电性连接，保证法拉第桶 10 在等离子体起辉时保持稳定的悬浮电位。
第一遮挡部 31优选为陶瓷等材料，第二遮挡部 32优选为铝等金属材料。 优选的， 隔离部件 26设置于第二遮挡部 32和顶盖 25之间， 隔离部件 26为 绝缘材料， 以保持顶盖 25和第二遮挡部 32之间的电性绝缘， 使得第二遮挡 部 32具有独立的电位。
所述顶盖 25和绝缘子腔体 21之间还设置有隔离部件， 更具体的， 隔离 部件 26位于第二遮挡部 32和顶盖 25之间，从而将顶盖 25与第二遮挡部 32 隔离绝缘， 保证腔体内工艺气体能够正常起辉。
实际上， 本发明的等离子体加工设备还可以包括第二导电子腔体， 即由 三个子腔体叠加而成， 具体在以下实施例中说明。
实施例二
图 5为实施例中等离子体加工设备的结构示意图。 如图所示， 等离子体 加工设备还包括第二导电子腔体 23 , 叠加设置于绝缘子腔体 21的上方， 第 二导电子腔体 23为金属材料。也就是说，等离子体加工设备由叠加设置的绝 缘子腔体 21、 第一导电子腔体 22和第二导电子腔体 23组成； 位于中间的第 一导电子腔体 22为陶瓷材料， 而其上下的第二导电子腔体 23和第一导电子 腔体 22为金属材料，第一导电子腔体 22位于绝缘子腔体 21下面，所述第一 导电子腔体 22为具有底壁的圓柱形部件， 第二导电子腔体 23位于绝缘子腔 体 21上面， 顶盖 25位于第二导电子腔体 23的上面， 顶盖 25、 绝缘子腔体 21、 第一导电子腔体 22和第二导电子腔体 23共同组成了等离子体加工设备 的反应腔室。
本实施例中， 绝缘子腔体 21和第二导电子腔体 23均为半径基本相同的 中空圓柱， 其高度根据设计要求可以不同也可以相同。
优选的，等离子体加工设备还包括第三遮挡部 33 , 其设置于第二导电子 腔体 23和隔离部件 26的连接处，并悬空延伸至绝缘子腔体 21和第二导电子 腔体 23的连接处，该第三遮挡部 33为圓筒形，其沿半径方向的剖面也为 "L" 形， 一端安装在隔离部件 26和第二导电子腔体 23的连接处， 悬空的延伸部 将绝缘子腔体 21和第二导电子腔体 23的连接处遮挡， 这样可以防止金属离 子的沉积。 第三遮挡部 33优选为铝等金属材料。
隔离部件 26位于第二导电子腔体 23和顶盖 25之间， 更具体的， 隔离 部件 26位于第三遮挡部 33和顶盖 25之间， 从而将顶盖 25与第二导电子腔 体 23 (以及第三遮挡部 33 ) 隔离绝缘， 保证第二导电子腔体 23具有独立的 电位， 腔体内工艺气体能够正常起辉。
电感线圈系统中的电感线圈、 法拉第屏蔽件 10 的结构和位置均与实施 例一相同， 在此不再赘述。 线圈保护罩 18为金属材料， 能够将第二导电子腔 体 23和第一导电子腔体 22电性连接，并通过第一导电子腔体 22接地，此外， 第二导电子腔体 23也可单独接地。
本实施例中的等离子体加工设备， 在法拉第屏蔽件 10 的上面和下面同 时设有接地部件， 即第一导电子腔体 22和第二导电子腔体 23 , 以保证等离 子体起辉和保持稳定。在法拉第屏蔽件 10的上下均有遮挡部件， 即第一遮挡 部 31和第三遮挡部 33 , 以保证法拉第屏蔽件 10在等离子体起辉时保持稳定 的悬浮电位。
其中， 第一射频电源 14和第一匹配器 15传送来的射频功率耦合至腔室 内产生高密度等离子体。 第一射频电源 14的频率可以为 2MHz或 13MHz。 第二射频电源 16通过第二匹配器 17将射频功率耦合至静电卡盘 29 (晶片基 座）， 以产生射频偏压。
本发明的另一实施例中， 等离子体加工设备可以省略第二射频电源和第 二匹配器， 如图 6所示， 静电卡盘 29直接接地， 而第一导电子腔体 22和第 二导电子腔体 23均接地， 该设备用于无须射频偏压的加工工艺中。
上述实施例均以设有电感线圈的 PVD设备 (例如磁控溅射设备 )为例， 实际上， 也可以为等离子体刻蚀设备或者等离子体化学气相沉积设备。 以上， 仅是本发明的较佳实施例而已， 并非对本发明作任何形式上的限 制。
虽然本发明已以较佳实施例披露如上， 然而并非用以限定本发明。 任何 熟悉本领域的技术人员， 在不脱离本发明技术方案范围情况下， 都可利用上 述揭示的方法和技术内容对本发明技术方案作出许多可能的变动和修饰， 或 修改为等同变化的等效实施例。 因此， 凡是未脱离本发明技术方案的内容， 均仍属于本发明技术方案保护的范围内。

Claims

利 要 求 书
1、 一种等离子体加工设备， 包括： 腔体和所述腔体上的靶， 所述靶定 位在所述腔体上使得所述靶的表面与腔体内的处理区域接触， 其特征在于， 所述腔体包括叠加设置的绝缘子腔体和第一导电子腔体， 所述第一导电 子腔体位于绝缘子腔体下面， 所述绝缘子腔体由绝缘材料制成， 所述第一导 电子腔体由金属材料制成；
所述绝缘子腔体内设有法拉第屏蔽件， 所述法拉第屏蔽件由金属材料制 成， 或者由镀有导电涂层的绝缘材料制成， 所述法拉第屏蔽件具有至少一个 开缝；
所述绝缘子腔体的外侧绕有电感线圈。
2、 根据权利要求 1 所述的等离子体加工设备， 其特征在于， 所述绝缘 子腔体为中通圓柱。
3、 根据权利要求 1 所述的等离子体加工设备， 其特征在于， 所述法拉 第屏蔽件为中通圓柱。
4、 根据权利要求 1 所述的等离子体加工设备， 其特征在于， 所述绝缘 子腔体的下沿设置有朝向绝缘子腔体内侧的凸缘， 该凸缘用于承载所述法拉 第屏蔽件。
5、 根据权利要求 4所述的等离子体加工设备， 其特征在于， 还包括： 第一遮挡部， 该第一遮挡部设置于所述凸缘和法拉第屏蔽件的连接处， 并向 第一导电子腔体的方向悬空延伸。
6、 根据权利要求 5所述的等离子体加工设备， 其特征在于， 还包括: 隔离部件， 该隔离部件设置于所述靶和绝缘子腔体之间。
7、 根据权利要求 6所述的等离子体加工设备， 其特征在于， 还包括： 第二遮挡部， 设置于所述绝缘子腔体和隔离部件的连接处， 并向绝缘子腔体 的方向悬空延伸。
8、 根据权利要求 6所述的等离子体加工设备， 其特征在于， 还包括第 二导电子腔体， 设置于所述隔离部件和绝缘子腔体之间。
9、 根据权利要求 8所述的等离子体加工设备， 其特征在于， 还包括第 三遮挡部， 设置于所述第二导电子腔体和隔离部件的连接处， 并悬空延伸至 绝缘子腔体和第二导电子腔体的连接处。
10、 根据权利要求 1-9任一所述的等离子体加工设备， 其特征在于， 还 包括： 线圈保护罩， 该线圈保护罩设置于所述电感线圈的外部。
11、 根据权利要求 1-9任一所述的等离子体加工设备， 其特征在于， 所 述法拉第屏蔽件的开缝处填充有绝缘材料。
12、 根据权利要求 1所述的等离子体加工设备， 其特征在于， 所述等离 子体加工设备为物理气相沉积装置。
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