JP5666133B2 - 非接触型処理キット - Google Patents
非接触型処理キット Download PDFInfo
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- JP5666133B2 JP5666133B2 JP2009543091A JP2009543091A JP5666133B2 JP 5666133 B2 JP5666133 B2 JP 5666133B2 JP 2009543091 A JP2009543091 A JP 2009543091A JP 2009543091 A JP2009543091 A JP 2009543091A JP 5666133 B2 JP5666133 B2 JP 5666133B2
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- 230000008021 deposition Effects 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 61
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 38
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 56
- 239000000463 material Substances 0.000 description 20
- 238000005240 physical vapour deposition Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- HJJVPARKXDDIQD-UHFFFAOYSA-N bromuconazole Chemical compound ClC1=CC(Cl)=CC=C1C1(CN2N=CN=C2)OCC(Br)C1 HJJVPARKXDDIQD-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Drying Of Semiconductors (AREA)
Description
本発明の実施形態は概して、半導体処理チャンバのための処理キット及び処理キットを有する半導体処理チャンバに関する。より具体的には、本発明は、物理気相蒸着チャンバにおける使用に適したリング及びシールドを含む処理キットに関する。
物理気相蒸着(physical vapor deposition:PVD)又はスパッタは、電子デバイスの製造において最も一般的に用いられる処理の1つである。PVDは真空チャンバ内で行われるプラズマ処理であり、負のバイアスをかけたターゲットを比較的重い原子(例えば、アルゴン(Ar))を有する不活性ガスのプラズマ又はこのような不活性ガスを含むガス混合物に暴露する。不活性ガスのイオンがターゲットに衝突することによりターゲット材料の原子が弾き出される。弾き出された原子は、チャンバ内に配置された基板支持台座部上の基板上に堆積膜として蓄積される。
Claims (14)
- 実質的に円筒形であるシールドを含む処理キットであって、
シールドが、
内縁部へと下に向かってテーパーが付いた上面を有する実質的に平坦な円筒形本体部であって、
上面から下方へ延びる傾斜面と、
内縁部で傾斜面から下方へ延びるリップ部を含む円筒形本体部と、
細長い円筒形内方リング及び細長い円筒形外方リングであって、両者は本体部から下方向に、かつ内縁部から半径方向外側に延び、外方リングは内方リングと実質的に平行な離間関係にある細長い円筒形内方リング及び細長い円筒形外方リングと、
本体部の外壁部から本体部の上面より上方向へと延びる取付部とを含み、取付部は、本体部の外壁部を超えて半径方向外側に向かって延びる取付フランジと、本体部の上面から延びる内壁部と、内壁部から半径方向外側かつ上方向に広がる内方テーパー部とを有する処理キット。 - 本体部が、ステンレススチール又はチタンの少なくとも1つから作製される請求項1記載の処理キット。
- 本体部が、導電性材料から作製される又は導電性材料でコーティングされる請求項1記載の処理キット。
- 本体部の内縁部が傾斜面を断ち切っており、内縁部が本体部の中心線と実質的に平行である請求項1記載の処理キット。
- 実質的に円筒形である堆積リングを更に含み、
堆積リングが、
上面と、基板支持台座部の棚部上で支持されるように構成された下面とを有する実質的に平坦な円筒形本体部と、
本体部の外方部に連結された少なくとも1つの下方向に延び、シールドの内方リングと噛み合うように構成されているUチャネルと、
本体部の内方領域の上面から上方向に延び、基板支持面を有する内壁部と、
内壁部から半径方向内側に向かって延びる基板支持棚部とを含む請求項1記載の処理キット。 - 実質的に円筒形である堆積リングを含み、
堆積リングが、
上面と、基板支持台座部の棚部上で支持されるように構成された下面とを有する実質的に平坦な円筒形本体部と、
本体部の外方部に連結された少なくとも1つの下方向に延びるUチャネルと、
本体部の内方領域の上面から上方向に延び、基板支持面を有する内壁部とを含む処理キット。 - 堆積リングが更に、
内壁部から半径方向内側に向かって延びる棚部と、
棚部の上面に配置され、基板支持面を規定している複数のボタンとを含む請求項6記載の処理キット。 - 複数のボタンが更に、
極性アレイに等間隔で配置された3つのボタンを含む請求項7記載の処理キット。 - Uチャネルが上向きである請求項6記載の処理キット。
- Uチャネルが更に、
堆積リングの本体部に連結された第1脚部と、
第1脚部から外方向に離間された第2脚部と、
これらの脚部を接合している底部とを含む請求項6記載の処理キット。 - 本体部が、ステンレススチール又はチタンの少なくとも1つから作製される請求項10記載の処理キット。
- 堆積リングの本体部が更に、
堆積リングの上面から上方向に延びるトラップ壁部と、
トラップ壁部から内方向下側に向かって延び、堆積リングの上面の内方部の上に張り出しているリップ部とを含む請求項6記載の処理キット。 - トラップ壁部の上面が更に、
頂点で外方傾斜壁部と交わる内方傾斜壁部を含む請求項12記載の処理キット。 - 外方リングが、本体部の上面から上方向へ延びる取付部と直線的に揃っている請求項1記載の処理キット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87075206P | 2006-12-19 | 2006-12-19 | |
US60/870,752 | 2006-12-19 | ||
PCT/US2007/087466 WO2008079722A2 (en) | 2006-12-19 | 2007-12-13 | Non-contact process kit |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010513722A JP2010513722A (ja) | 2010-04-30 |
JP2010513722A5 JP2010513722A5 (ja) | 2010-12-09 |
JP5666133B2 true JP5666133B2 (ja) | 2015-02-12 |
Family
ID=39563165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009543091A Active JP5666133B2 (ja) | 2006-12-19 | 2007-12-13 | 非接触型処理キット |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5666133B2 (ja) |
KR (1) | KR101504085B1 (ja) |
CN (1) | CN101563560B (ja) |
SG (1) | SG177902A1 (ja) |
WO (1) | WO2008079722A2 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
JP5194315B2 (ja) * | 2008-07-04 | 2013-05-08 | 株式会社昭和真空 | スパッタリング装置 |
US8900471B2 (en) * | 2009-02-27 | 2014-12-02 | Applied Materials, Inc. | In situ plasma clean for removal of residue from pedestal surface without breaking vacuum |
JP5395255B2 (ja) * | 2010-03-24 | 2014-01-22 | キヤノンアネルバ株式会社 | 電子デバイスの製造方法およびスパッタリング方法 |
JP2013537719A (ja) * | 2010-08-20 | 2013-10-03 | アプライド マテリアルズ インコーポレイテッド | 長寿命デポジションリング |
CN105177519B (zh) * | 2010-10-29 | 2018-03-27 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
CN102676997A (zh) * | 2012-06-11 | 2012-09-19 | 上海宏力半导体制造有限公司 | 一种物理气相沉积设备 |
DE112013006746B4 (de) * | 2013-02-28 | 2019-03-21 | Canon Anelva Corporation | Sputtergerät |
CN104746019B (zh) * | 2013-12-26 | 2018-01-19 | 北京北方华创微电子装备有限公司 | 反应腔室及等离子体加工设备 |
CN105097604B (zh) * | 2014-05-05 | 2018-11-06 | 北京北方华创微电子装备有限公司 | 工艺腔室 |
JP6357252B2 (ja) * | 2014-06-13 | 2018-07-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 均一性の改善及びエッジの長寿命化のための平坦なエッジの設計 |
US10115573B2 (en) * | 2014-10-14 | 2018-10-30 | Applied Materials, Inc. | Apparatus for high compressive stress film deposition to improve kit life |
US10546733B2 (en) * | 2014-12-31 | 2020-01-28 | Applied Materials, Inc. | One-piece process kit shield |
KR20170128585A (ko) * | 2015-03-20 | 2017-11-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 고온 폴리머 본드를 이용하여 금속 베이스에 본딩 결합된 세라믹 정전 척 |
TWM534436U (en) * | 2015-07-03 | 2016-12-21 | Applied Materials Inc | Frame, multi-piece under substrate cover frame and processing chamber |
CN109321890A (zh) * | 2015-07-03 | 2019-02-12 | 应用材料公司 | 具有高沉积环及沉积环夹具的处理配件 |
US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
JP7225599B2 (ja) * | 2018-08-10 | 2023-02-21 | 東京エレクトロン株式会社 | 成膜装置 |
US11961723B2 (en) | 2018-12-17 | 2024-04-16 | Applied Materials, Inc. | Process kit having tall deposition ring for PVD chamber |
CN110670049A (zh) * | 2019-11-19 | 2020-01-10 | 武汉新芯集成电路制造有限公司 | 一种气相沉积方法及装置 |
TW202129045A (zh) * | 2019-12-05 | 2021-08-01 | 美商應用材料股份有限公司 | 多陰極沉積系統與方法 |
CN111471976A (zh) * | 2020-05-21 | 2020-07-31 | 中国科学院半导体研究所 | 衬底托 |
CN114717514B (zh) * | 2021-01-06 | 2023-12-15 | 鑫天虹(厦门)科技有限公司 | 薄膜沉积设备 |
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US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6051122A (en) * | 1997-08-21 | 2000-04-18 | Applied Materials, Inc. | Deposition shield assembly for a semiconductor wafer processing system |
JPH11229132A (ja) * | 1998-02-19 | 1999-08-24 | Toshiba Corp | スパッタ成膜装置およびスパッタ成膜方法 |
CN1172022C (zh) * | 2001-10-11 | 2004-10-20 | 矽统科技股份有限公司 | 沉积过程的工作平台 |
GB2401375B (en) * | 2002-02-14 | 2005-08-31 | Trikon Technologies Ltd | Plasma processing apparatus |
US7670436B2 (en) * | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
US7579067B2 (en) * | 2004-11-24 | 2009-08-25 | Applied Materials, Inc. | Process chamber component with layered coating and method |
-
2007
- 2007-12-13 SG SG2011094000A patent/SG177902A1/en unknown
- 2007-12-13 JP JP2009543091A patent/JP5666133B2/ja active Active
- 2007-12-13 KR KR1020097014871A patent/KR101504085B1/ko active IP Right Grant
- 2007-12-13 CN CN2007800470734A patent/CN101563560B/zh active Active
- 2007-12-13 WO PCT/US2007/087466 patent/WO2008079722A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20090094144A (ko) | 2009-09-03 |
JP2010513722A (ja) | 2010-04-30 |
SG177902A1 (en) | 2012-02-28 |
WO2008079722A3 (en) | 2009-04-16 |
CN101563560B (zh) | 2012-07-18 |
KR101504085B1 (ko) | 2015-03-19 |
CN101563560A (zh) | 2009-10-21 |
WO2008079722A2 (en) | 2008-07-03 |
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