US4545882A - Method and apparatus for detecting sputtering target depletion - Google Patents
Method and apparatus for detecting sputtering target depletion Download PDFInfo
- Publication number
- US4545882A US4545882A US06/528,951 US52895183A US4545882A US 4545882 A US4545882 A US 4545882A US 52895183 A US52895183 A US 52895183A US 4545882 A US4545882 A US 4545882A
- Authority
- US
- United States
- Prior art keywords
- target
- detectable
- sputtering
- substrate
- coating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3479—Detecting exhaustion of target material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (17)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/528,951 US4545882A (en) | 1983-09-02 | 1983-09-02 | Method and apparatus for detecting sputtering target depletion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/528,951 US4545882A (en) | 1983-09-02 | 1983-09-02 | Method and apparatus for detecting sputtering target depletion |
Publications (1)
Publication Number | Publication Date |
---|---|
US4545882A true US4545882A (en) | 1985-10-08 |
Family
ID=24107904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US06/528,951 Expired - Fee Related US4545882A (en) | 1983-09-02 | 1983-09-02 | Method and apparatus for detecting sputtering target depletion |
Country Status (1)
Country | Link |
---|---|
US (1) | US4545882A (en) |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0259934A1 (en) * | 1986-09-10 | 1988-03-16 | Philips and Du Pont Optical Deutschland GmbH | Sputtering apparatus with a device for the measurement of a critical target depletion |
FR2608633A1 (en) * | 1986-12-23 | 1988-06-24 | Balzers Hochvakuum | CATHODIC SPRAYING SOURCE OF WHICH THE EROSION CONDITION CAN BE CONTROLLED AND DRIVING METHOD FOR A CATHODIC SPRAYING INSTALLATION PROVIDED WITH SUCH A SOURCE |
WO1990010947A1 (en) * | 1989-03-15 | 1990-09-20 | Balzers Aktiengesellschaft | Process for detecting the attainment of a predetermined depth in target body erosion and target body therefor |
US5080774A (en) * | 1986-10-11 | 1992-01-14 | Saint-Gobain Vitrage | Surface configuration means for vacuum coating device |
US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
EP0615273A1 (en) * | 1993-03-12 | 1994-09-14 | Applied Materials, Inc. | Method and apparatus for detection of sputtering target erosion |
EP0622823A1 (en) * | 1993-04-28 | 1994-11-02 | Japan Energy Corporation | Sputtering targets having life alarm function |
US5470452A (en) * | 1990-08-10 | 1995-11-28 | Viratec Thin Films, Inc. | Shielding for arc suppression in rotating magnetron sputtering systems |
US6331234B1 (en) | 1999-06-02 | 2001-12-18 | Honeywell International Inc. | Copper sputtering target assembly and method of making same |
WO2002014571A3 (en) * | 2000-08-17 | 2002-04-25 | Tosoh Smd Inc | High purity sputter targets with target end-of-life indication and method of manufacture |
US20020112791A1 (en) * | 1999-06-02 | 2002-08-22 | Kardokus Janine K. | Methods of forming copper-containing sputtering targets |
US6758920B2 (en) | 1999-11-24 | 2004-07-06 | Honeywell International Inc. | Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets |
US20040144638A1 (en) * | 2003-01-27 | 2004-07-29 | Jaso Mark A. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US20060081459A1 (en) * | 2004-10-18 | 2006-04-20 | Applied Materials, Inc. | In-situ monitoring of target erosion |
US20060151321A1 (en) * | 2004-03-05 | 2006-07-13 | Tosoh Corporation | Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body |
US20070039817A1 (en) * | 2003-08-21 | 2007-02-22 | Daniels Brian J | Copper-containing pvd targets and methods for their manufacture |
US20070068804A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pvd target with end of service life detection capability |
US20070068796A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a target having end of service life detection capability |
US20070068803A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pvd target with end of service life detection capability |
US20090246406A1 (en) * | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
DE102010052341A1 (en) * | 2010-11-25 | 2012-05-31 | Von Ardenne Anlagentechnik Gmbh | Protection device on tube target in vacuum process chamber, useful for detecting its minimum cross-sectional minimum diameter predetermined by diameter, comprises radially directed capillary line running from interior of the tube target |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US20160216185A1 (en) * | 2015-01-28 | 2016-07-28 | Lam Research Corporation | Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber |
WO2020176536A1 (en) * | 2019-02-25 | 2020-09-03 | Starfire Industries Llc | Method and apparatus for metal and ceramic nanolayering for accident tolerant nuclear fuel, particle accelerators, and aerospace leading edges |
US11008650B2 (en) | 2016-11-03 | 2021-05-18 | Starfire Industries Llc | Compact system for coupling RF power directly into RF linacs |
CN115572955A (en) * | 2020-12-14 | 2023-01-06 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target walking method thereof |
CN115572955B (en) * | 2020-12-14 | 2024-04-26 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target moving method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166783A (en) * | 1978-04-17 | 1979-09-04 | Varian Associates, Inc. | Deposition rate regulation by computer control of sputtering systems |
US4311725A (en) * | 1978-08-18 | 1982-01-19 | National Research Development Corporation | Control of deposition of thin films |
US4341816A (en) * | 1979-08-21 | 1982-07-27 | Siemens Aktiengesellschaft | Method for attaching disc- or plate-shaped targets to cooling plates for sputtering systems |
US4374722A (en) * | 1980-08-08 | 1983-02-22 | Battelle Development Corporation | Cathodic sputtering target including means for detecting target piercing |
US4407708A (en) * | 1981-08-06 | 1983-10-04 | Eaton Corporation | Method for operating a magnetron sputtering apparatus |
-
1983
- 1983-09-02 US US06/528,951 patent/US4545882A/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166783A (en) * | 1978-04-17 | 1979-09-04 | Varian Associates, Inc. | Deposition rate regulation by computer control of sputtering systems |
US4311725A (en) * | 1978-08-18 | 1982-01-19 | National Research Development Corporation | Control of deposition of thin films |
US4341816A (en) * | 1979-08-21 | 1982-07-27 | Siemens Aktiengesellschaft | Method for attaching disc- or plate-shaped targets to cooling plates for sputtering systems |
US4374722A (en) * | 1980-08-08 | 1983-02-22 | Battelle Development Corporation | Cathodic sputtering target including means for detecting target piercing |
US4407708A (en) * | 1981-08-06 | 1983-10-04 | Eaton Corporation | Method for operating a magnetron sputtering apparatus |
Cited By (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5380419A (en) * | 1986-09-10 | 1995-01-10 | U.S. Philips Corp. | Cathode-sputtering apparatus comprising a device for measuring critical target consumption |
EP0259934A1 (en) * | 1986-09-10 | 1988-03-16 | Philips and Du Pont Optical Deutschland GmbH | Sputtering apparatus with a device for the measurement of a critical target depletion |
US5080774A (en) * | 1986-10-11 | 1992-01-14 | Saint-Gobain Vitrage | Surface configuration means for vacuum coating device |
FR2608633A1 (en) * | 1986-12-23 | 1988-06-24 | Balzers Hochvakuum | CATHODIC SPRAYING SOURCE OF WHICH THE EROSION CONDITION CAN BE CONTROLLED AND DRIVING METHOD FOR A CATHODIC SPRAYING INSTALLATION PROVIDED WITH SUCH A SOURCE |
DE3724937A1 (en) * | 1986-12-23 | 1988-07-07 | Balzers Hochvakuum | SPRAYING SOURCE FOR CATHODE SPRAYING SYSTEMS |
WO1990010947A1 (en) * | 1989-03-15 | 1990-09-20 | Balzers Aktiengesellschaft | Process for detecting the attainment of a predetermined depth in target body erosion and target body therefor |
US5725746A (en) * | 1990-08-10 | 1998-03-10 | Viratec Thin Films, Inc. | Shielding for arc suppression in rotating magnetron sputtering systems |
US5470452A (en) * | 1990-08-10 | 1995-11-28 | Viratec Thin Films, Inc. | Shielding for arc suppression in rotating magnetron sputtering systems |
US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
EP0615273A1 (en) * | 1993-03-12 | 1994-09-14 | Applied Materials, Inc. | Method and apparatus for detection of sputtering target erosion |
EP0622823A1 (en) * | 1993-04-28 | 1994-11-02 | Japan Energy Corporation | Sputtering targets having life alarm function |
US5487823A (en) * | 1993-04-28 | 1996-01-30 | Japan Energy Corporation | Sputtering targets having life alarm function |
US6331234B1 (en) | 1999-06-02 | 2001-12-18 | Honeywell International Inc. | Copper sputtering target assembly and method of making same |
US20020112791A1 (en) * | 1999-06-02 | 2002-08-22 | Kardokus Janine K. | Methods of forming copper-containing sputtering targets |
US6849139B2 (en) | 1999-06-02 | 2005-02-01 | Honeywell International Inc. | Methods of forming copper-containing sputtering targets |
US6645427B1 (en) | 1999-06-02 | 2003-11-11 | Honeywell International Inc. | Copper sputtering target assembly and method of making same |
US6758920B2 (en) | 1999-11-24 | 2004-07-06 | Honeywell International Inc. | Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets |
WO2002014571A3 (en) * | 2000-08-17 | 2002-04-25 | Tosoh Smd Inc | High purity sputter targets with target end-of-life indication and method of manufacture |
US20040020769A1 (en) * | 2000-08-17 | 2004-02-05 | Ivannov Eugene Y | High purity sputter targets with target end-of-life indication and method of manufacture |
EP1322796A2 (en) * | 2000-08-17 | 2003-07-02 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
EP1322796A4 (en) * | 2000-08-17 | 2008-03-05 | Tosoh Smd Inc | High purity sputter targets with target end-of-life indication and method of manufacture |
US7063773B2 (en) | 2000-08-17 | 2006-06-20 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
US6858102B1 (en) | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
US20040144638A1 (en) * | 2003-01-27 | 2004-07-29 | Jaso Mark A. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US6811657B2 (en) | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US20050023132A1 (en) * | 2003-01-27 | 2005-02-03 | Jaso Mark A. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US6974524B1 (en) | 2003-01-27 | 2005-12-13 | Micron Technology, Inc. | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
US20060054497A1 (en) * | 2003-01-27 | 2006-03-16 | Jaso Mark A | Apparatus, method and system for monitoring chamber parameters associated with a deposition process |
US20070039817A1 (en) * | 2003-08-21 | 2007-02-22 | Daniels Brian J | Copper-containing pvd targets and methods for their manufacture |
US20060151321A1 (en) * | 2004-03-05 | 2006-07-13 | Tosoh Corporation | Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body |
US8206561B2 (en) * | 2004-03-05 | 2012-06-26 | Tosoh Corporation | Cylindrical sputtering target, ceramic sintered body, and process for producing sintered body |
US20060081459A1 (en) * | 2004-10-18 | 2006-04-20 | Applied Materials, Inc. | In-situ monitoring of target erosion |
US20070068803A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pvd target with end of service life detection capability |
US7891536B2 (en) | 2005-09-26 | 2011-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
US20070068804A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pvd target with end of service life detection capability |
US20110126397A1 (en) * | 2005-09-26 | 2011-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pvd target with end of service life detection capability |
US20070068796A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a target having end of service life detection capability |
US8276648B2 (en) | 2005-09-26 | 2012-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
US8795486B2 (en) | 2005-09-26 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | PVD target with end of service life detection capability |
US11658016B2 (en) | 2005-10-31 | 2023-05-23 | Applied Materials, Inc. | Shield for a substrate processing chamber |
US10347475B2 (en) | 2005-10-31 | 2019-07-09 | Applied Materials, Inc. | Holding assembly for substrate processing chamber |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US20090246406A1 (en) * | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Plasma processing apparatus, chamber internal part, and method of detecting longevity of chamber internal part |
DE102010052341B4 (en) * | 2010-11-25 | 2015-02-12 | Von Ardenne Gmbh | Protection device on pipe targets |
DE102010052341A1 (en) * | 2010-11-25 | 2012-05-31 | Von Ardenne Anlagentechnik Gmbh | Protection device on tube target in vacuum process chamber, useful for detecting its minimum cross-sectional minimum diameter predetermined by diameter, comprises radially directed capillary line running from interior of the tube target |
US20160216185A1 (en) * | 2015-01-28 | 2016-07-28 | Lam Research Corporation | Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber |
CN105823781A (en) * | 2015-01-28 | 2016-08-03 | 朗姆研究公司 | Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber |
US10041868B2 (en) * | 2015-01-28 | 2018-08-07 | Lam Research Corporation | Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber |
CN105823781B (en) * | 2015-01-28 | 2019-06-21 | 朗姆研究公司 | Estimation to the remaining life of the vulnerable part in semiconductors manufacture chamber |
US11008650B2 (en) | 2016-11-03 | 2021-05-18 | Starfire Industries Llc | Compact system for coupling RF power directly into RF linacs |
WO2020176536A1 (en) * | 2019-02-25 | 2020-09-03 | Starfire Industries Llc | Method and apparatus for metal and ceramic nanolayering for accident tolerant nuclear fuel, particle accelerators, and aerospace leading edges |
CN113474482A (en) * | 2019-02-25 | 2021-10-01 | 星火工业有限公司 | Method and apparatus for accident tolerant nuclear fuel, particle accelerator, and metal and ceramic nanocoating for aerospace frontlines |
CN115572955A (en) * | 2020-12-14 | 2023-01-06 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target walking method thereof |
CN115572955B (en) * | 2020-12-14 | 2024-04-26 | 上海超导科技股份有限公司 | Target pit testing device and feedback control target moving method thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SHATTERPROOF GLASS CORPORATION A DE CORP. Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:MC KELVEY, HAROLD E.;REEL/FRAME:004201/0901 Effective date: 19830825 |
|
AS | Assignment |
Owner name: BURTON, PARKER & SCHRAMM, SUITE 301, VICANT BLDG. Free format text: SECURITY INTEREST;ASSIGNOR:SHATTERPROOF GLASS CORPORATION;REEL/FRAME:004682/0100 |
|
AS | Assignment |
Owner name: BOC GROUP PLC, THE, CHERTSEY ROAD, WINDLESHAM SURR Free format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:SHATTERPROOF GLASS CORPORATION, A CORP. OF DE;REEL/FRAME:004925/0902 Effective date: 19880201 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
REMI | Maintenance fee reminder mailed | ||
LAPS | Lapse for failure to pay maintenance fees | ||
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 19891017 |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |