DE60142299D1 - Hochreiner sputtering targets mit indikator zur anzeige des endes der nutzungsdauerfür target und herstellungsverfahren dafür - Google Patents

Hochreiner sputtering targets mit indikator zur anzeige des endes der nutzungsdauerfür target und herstellungsverfahren dafür

Info

Publication number
DE60142299D1
DE60142299D1 DE60142299T DE60142299T DE60142299D1 DE 60142299 D1 DE60142299 D1 DE 60142299D1 DE 60142299 T DE60142299 T DE 60142299T DE 60142299 T DE60142299 T DE 60142299T DE 60142299 D1 DE60142299 D1 DE 60142299D1
Authority
DE
Germany
Prior art keywords
indicator
indicating
manufacturing process
sputtering targets
process therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142299T
Other languages
English (en)
Inventor
Eugene Ivanov
David B Smathers
Charles E Wickersham
John E Poole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh SMD Inc
Original Assignee
Tosoh SMD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh SMD Inc filed Critical Tosoh SMD Inc
Application granted granted Critical
Publication of DE60142299D1 publication Critical patent/DE60142299D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3482—Detecting or avoiding eroding through
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE60142299T 2000-08-17 2001-08-17 Hochreiner sputtering targets mit indikator zur anzeige des endes der nutzungsdauerfür target und herstellungsverfahren dafür Expired - Lifetime DE60142299D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22607300P 2000-08-17 2000-08-17
US24106000P 2000-10-17 2000-10-17
PCT/US2001/041775 WO2002014571A2 (en) 2000-08-17 2001-08-17 High purity sputter targets with target end-of-life indication and method of manufacture

Publications (1)

Publication Number Publication Date
DE60142299D1 true DE60142299D1 (de) 2010-07-15

Family

ID=26920184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142299T Expired - Lifetime DE60142299D1 (de) 2000-08-17 2001-08-17 Hochreiner sputtering targets mit indikator zur anzeige des endes der nutzungsdauerfür target und herstellungsverfahren dafür

Country Status (5)

Country Link
US (1) US7063773B2 (de)
EP (1) EP1322796B1 (de)
KR (1) KR20030024868A (de)
DE (1) DE60142299D1 (de)
WO (1) WO2002014571A2 (de)

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US20050016833A1 (en) * 2003-04-17 2005-01-27 Shannon Lynn Plasma sprayed indium tin oxide target for sputtering
US20050061857A1 (en) * 2003-09-24 2005-03-24 Hunt Thomas J. Method for bonding a sputter target to a backing plate and the assembly thereof
US6886736B1 (en) * 2003-10-07 2005-05-03 Veniamin V. Gubarev Method of diffusion welding of different metals in air
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7282122B2 (en) * 2004-03-26 2007-10-16 Taiwan Semiconductor Manufacturing Company Method and system for target lifetime
KR20050102018A (ko) * 2004-04-20 2005-10-25 송정식 휴대폰 케이스
US20070243095A1 (en) * 2004-06-15 2007-10-18 Tosoh Smd, Inc. High Purity Target Manufacturing Methods
US20060081459A1 (en) * 2004-10-18 2006-04-20 Applied Materials, Inc. In-situ monitoring of target erosion
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
KR100672389B1 (ko) 2005-01-28 2007-01-24 엘지전자 주식회사 이동통신 단말기의 케이스 및 그 제작방법
US20060219546A1 (en) * 2005-03-31 2006-10-05 Chia-Hong Jan Concentration-graded alloy sputtering target
US20060289304A1 (en) * 2005-06-22 2006-12-28 Guardian Industries Corp. Sputtering target with slow-sputter layer under target material
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056845A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Multiple zone sputtering target created through conductive and insulation bonding
US7588668B2 (en) * 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
US7891536B2 (en) * 2005-09-26 2011-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target with end of service life detection capability
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US20080121521A1 (en) * 2006-08-15 2008-05-29 Chunghwa Picture Tubes, Ltd. Plasma sputtering target assembly and manufacturing method therefor
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080236738A1 (en) * 2007-03-30 2008-10-02 Chi-Fung Lo Bonded sputtering target and methods of manufacture
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20100068552A1 (en) * 2008-03-31 2010-03-18 Infineon Technologies Ag Module including a stable solder joint
WO2010051040A1 (en) * 2008-11-03 2010-05-06 Tosoh Smd, Inc. Method of making a sputter target and sputter targets made thereby
US8992747B2 (en) * 2010-03-12 2015-03-31 Applied Materials, Inc. Apparatus and method for improved darkspace gap design in RF sputtering chamber
DE102010052341B4 (de) * 2010-11-25 2015-02-12 Von Ardenne Gmbh Schutzvorrichtung an Rohrtargets
US10138544B2 (en) 2011-06-27 2018-11-27 Soleras, LTd. Sputtering target
US20130206589A1 (en) * 2012-02-14 2013-08-15 Solar Applied Materials Technology Corp. Sputtering Target Having Alarm Function
US9543457B2 (en) 2012-09-28 2017-01-10 First Solar, Inc. Method and system for manufacturing back contacts of photovoltaic devices
US10060023B2 (en) 2012-10-19 2018-08-28 Infineon Technologies Ag Backing plate for a sputter target, sputter target, and sputter device
US20140299873A1 (en) * 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
KR102111833B1 (ko) * 2014-06-27 2020-05-18 플란제 콤포지트 마테리얼스 게엠베하 스퍼터링 타겟
CN108624856B (zh) * 2018-07-05 2024-06-25 包头稀土研究院 靶材组件
US11424111B2 (en) * 2020-06-25 2022-08-23 Taiwan Semiconductor Manufacturing Company Limited Sputtering target assembly to prevent overetch of backing plate and methods of using the same

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DE2933835A1 (de) * 1979-08-21 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum befestigen von in scheiben- oder plattenform vorliegenden targetmaterialien auf kuehlteller fuer aufstaeubanlagen
US4407708A (en) * 1981-08-06 1983-10-04 Eaton Corporation Method for operating a magnetron sputtering apparatus
US4545882A (en) * 1983-09-02 1985-10-08 Shatterproof Glass Corporation Method and apparatus for detecting sputtering target depletion
CH669609A5 (de) * 1986-12-23 1989-03-31 Balzers Hochvakuum
US5230459A (en) * 1992-03-18 1993-07-27 Tosoh Smd, Inc. Method of bonding a sputter target-backing plate assembly assemblies produced thereby
US5282943A (en) * 1992-06-10 1994-02-01 Tosoh Smd, Inc. Method of bonding a titanium containing sputter target to a backing plate and bonded target/backing plate assemblies produced thereby
JPH08176808A (ja) * 1993-04-28 1996-07-09 Japan Energy Corp 寿命警報機能を備えたスパッタリングタ−ゲット
JPH10158829A (ja) * 1996-12-04 1998-06-16 Sony Corp スパッタリングターゲット組立体の製造方法
JPH1129858A (ja) * 1997-07-14 1999-02-02 Mitsubishi Chem Corp スパッタリングターゲット
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US5947053A (en) 1998-01-09 1999-09-07 International Business Machines Corporation Wear-through detector for multilayered parts and methods of using same
US6071389A (en) * 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
US6521108B1 (en) * 1998-12-29 2003-02-18 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making same

Also Published As

Publication number Publication date
EP1322796A2 (de) 2003-07-02
WO2002014571A2 (en) 2002-02-21
EP1322796B1 (de) 2010-06-02
KR20030024868A (ko) 2003-03-26
US7063773B2 (en) 2006-06-20
EP1322796A4 (de) 2008-03-05
US20040020769A1 (en) 2004-02-05
WO2002014571A3 (en) 2002-04-25

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