CN1221684C - 高熔点金属制品的再生 - Google Patents
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Abstract
高熔点金属制品(12),如铜等非高熔点导电金属背衬(14)上的钽,能够在选定区域的金属被消耗后,通过对该区域(18)进行粉末填充(28)和高扫描速度下高能加热(30)烧结所加的粉末而再生,由于无需完全熔化填充的粉末,所以能够建立与再生制品的其余部位一致的显微结构,并且无需将铜背衬(14)与钽溅射板(12)分离。该再生方法可以应用于遭受不均匀侵蚀、蚀刻、切割或其他金属消耗的非固定安装的高熔点金属制品。这些高熔点金属制品的形状可以是板状、棒状、圆柱体状、块状或其他除溅射靶以外的形状。该过程可以应用于如X射线靶(碳背衬上的钼板)。
Description
相关申请交叉引用
本申请要求临时申请号为60/268742、于2001年2月14日提交的名称为“溅射靶的再生”的优先权,其内容参考结合于此。
发明领域和背景
本发明的目的是降低高熔点金属制品的循环再制的费用,具体是附有背衬板结构的溅射靶的再生。
举例来说,高温材料溅射靶,如用于集成电路制造和其他电、磁、光学制品制造的钽和其他高熔点金属(Ta、Nb、Ti、Mo、Zr的金属和合金;氢化物、氮化物和它们的其他化合物),在溅射过程中通常会发生不均匀的侵蚀,从而在靶的工作表面上产生跑道状的沟渠。为了防止基片污染或靶后面冷却液的灾难性击穿,通常在高熔点溅射金属远未贯穿前就停止使用该靶,在溅射金属仅消耗掉小部分时就换用新靶。溅射靶的主要部分只能以碎片的价格重新出售或者很费劲地循环再造,除此之外,必须取下靶的背衬板而与新的溅射金属板重新结合。
本发明的主要目的是采用下文详细描述的溅射靶再生方法来代替目前的循环再制方法。
本发明的目的是降低将使用过的溅射靶再次利用的成本和加快再利用速度。
本发明进一步的目的是建立至少与靶其余部位同样好的填充区域显微结构。
简要说明
本发明是一种将固体金属粉末填充到消耗表面对使用过的高熔点金属制品表面进行再生的方法。例如,溅射靶表面在氩原子无数次不均匀轰击后产生跑道状沟渠或其他侵蚀区。消耗表面通过放置或沉积溅射金属,然后通过激光或电子束加热烧结结合部位或者等离子体放电沉积的方法进行再生。使用这些方法能产生完全密致的涂层。这就避免了将钽与铜分离,再用钽粉填充钽板的侵蚀区域、热等静压(HIP)结合和重新装配。在激光或电子束扫描烧结或等离子体放电沉积时,无须从靶上分离去背衬板即可再生靶。各种形式的再生都能制得显显微结构与靶的其余部位相似的填充侵蚀区域。
本发明可应用于遭受不均匀侵蚀、蚀刻、切割或其他金属消耗的高熔点金属制品(不论是否固定于非高熔点金属载体上)。这些高熔点金属制品的形状可以是板状、棒状、圆柱体状、块状或其他除溅射靶以外的形状。此过程可应用于例如X射线靶(碳背衬上的钼板)。
高熔点金属制品(如钽靶)的再生避免了当制品仅有很小一部分消耗后就必须将整个制品循环再制的情况。这种再生方法比将整个靶循环再制更经济。如果结合有背衬板(如铜)的话,也无须分离。此再生过程可按需要重复多次。
本发明其他的目的、特征和优点在下文优选实施例的详细说明和附图中将是显而易见的。
附图说明
图1是典型的靶和背衬板的截面图。
图2是包含通常的侵蚀区域的正视图。
图3是再生过程的方块图。
图4是实施本发明用的真空或惰性气体室装置的简图。
优选实施例的详细说明
在图1和2中,表示了要进行本发明再生过程的与铜(Cu)背衬板14结合的一块钽(Ta)溅射板12。除了背衬板外,溅射靶还可以包括附加的复杂部件,如结合的水冷旋管16或甚至是一个大型冷却液槽的一部分和/或具有复杂的法兰、机械和电的附加结构。18表示溅射板12的靶表面20上在溅射使用后产生的典型跑道状侵蚀区域或消耗区域。
图3表示本发明优选实施例的流程示意图。为使用过的Ta-Cu靶26组合件准备了一个真空室22或惰性气体室24。在如图2所示的溅射板12的侵蚀区域18或消耗区域内填充以溅射金属粉末。通过激光或电子束光栅扫描熔化粉末表面,使粉末结合或烧结30到溅射板12上,在此过程中粉末颗粒的表面,但不是要留作晶粒供晶粒生长用的整个颗粒发生熔化。熔化可以在粉末沉积或沉积之后以层对层方式实现。也可以预先制好由粉末形成的箔,将其放入沟渠中。在所有情况下,都是填充物被烧结、自结合和附着于靶上,然后通过机械、砂磨、其他磨蚀和/或熔入溅射法进行平化31。
以下是实施本发明的几个实施例之一。
如图4所示,溅射靶10置于一个真空室32中,利用常规泵34和气体回充装置36连同阀38,经抽真空后使室内保持一个大气压力的纯化的惰性气体(氩)气氛。由多个喷嘴42组成的粉末加料器40将多股高速的100到325目Ta粉末流输送到侵蚀区域18或消耗区域上。粉末加料器40可以沿着侵蚀区域18扫描,或者靶可以相对于固定的粉末加料器移动。一束15到20千瓦(优选20到25)的激光束44可以在侵蚀区域18上以光栅扫描的方式移动,该激光束由激光器45和常规扫描光学装置46、48形成,激光器和光学装置可以全部置于室32中或者部分位于室32之外并使用一个窗口供激光束通入之用,此时粉末落下,激光束熔化粉末颗粒表面,使颗粒与颗粒之间发生结合,并且颗粒在区域18内连续反复地与侵蚀区域结合,直到该区域被填满。可以使用粉末重量计算或光学监测器监控过程的完成并填充的停止。
可用于这个过程的一种设备是AeroMet公司的Lasform商标的直接金属沉积系统,例如Abbott等人在《先进金属和过程》(Advanced Metals&Processes)1998年5月号上发表的“激光形成钛部件”(Laser Forming Titanium Components)一文和Arcella等人在《金属杂志》(Journal of Metals)2000年5月号28到30页发表的“用激光成形从粉末制备钛航空部件”(Producing Titanium Aerospace Components FromPowder Using Laser Forming)一文中都对此作了描述。
激光可以提供填充后的热量来完成烧结。可以使用分开的靶加热器来预先加热靶或在再生时提供额外热量。
通过各种形式的再生制得的已填充的侵蚀区域或消耗区域,其显微结构与靶的其余部位相似。例如,对用电子束光栅扫描方法制得的溅射靶填充侵蚀区域样品进行了分析。其硬度是辗制滚并退火的钽板的典型值,有通常的差异。填充的侵蚀区域基本上没有孔隙和夹杂物。屈服强度和极限强度都符合ASTM的要求。
在本发明的另一个实施例中,可以使用不太为人所知的等离子体沉积方法将粉末填充和熔化的两个步骤结合在一起。
对本领域技术人员来说,可以作出的其他实施例、改进、细节和用途,只要与前文公开的内容和本质一致,并且在本专利范围内,该范围仅受限于以下按专利法解释的、包括相同意义的款的权利要求。
Claims (24)
1.再生的钽溅射靶,包括:
使用过的钽溅射靶,包括一个钽溅射板和一个背衬板,其中所述钽溅射板的靶表面有一个或多个消耗的表面部位;
在每个消耗表面部位上的结合了的金属颗粒,这些结合了的金属颗粒部分地或全部地填充每个消耗表面部位,
其特征在于所述使用过的钽溅射靶无需从其上面分离去所述背衬板,即可实行再生。
2.如权利要求1所述再生的钽溅射靶,其特征在于所述结合了的金属颗粒的显微结构与所述的钽溅射板基本上相似。
3.一种再生消耗的钽溅射靶的方法,包括以下步骤:
提供一个包括钽溅射板和背衬板的使用过的钽溅射靶,所述的钽溅射板的靶表面上有一个或多个消耗的表面部位;
提供一种显微结构与钽溅射板基本上相似的高熔点金属粉末;
用所述的高熔点金属粉末填充每个消耗表面部位,形成填充部分;
当高熔点金属粉末落下时,对所述的填充部分施以短时间的高能辐射能量束使所述的高熔点金属粉末颗粒相互结合并与每个所述的消耗表面部位结合,从而以形成结合了的合金属颗粒物质,
其中所述的使用过的钽溅射靶无需将背衬板从钽溅射板上分离就能再生。
4.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于进一步包括除去多余结合的金属颗粒物质使钽溅射板平化的步骤。
5.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于所述的能量束是激光束。
6.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于所述的能量束是电子束。
7.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于结合步骤是等离子体沉积。
8.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于所述的能量束在真空环境中施加。
9.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于所述的能量束在惰性气体环境中施加。
10.如权利要求3所述再生消耗的钽溅射靶的方法,其特征在于所述的高熔点金属粉末是以由粉末形成的箔的形式存在,所述的粉末形成的箔被单独置于每个所述的消耗表面部位,然后与溅射板结合,这里所述的填充和结合步骤重复进行直到所述的消耗表面部位被部分或全部填满。
11.如权利要求4所述再生消耗的钽溅射靶的方法,其特征在于其中除去多余结合金属颗粒使溅射板平化的步骤是机械平化。
12.如权利要求4所述再生消耗的钽溅射靶的方法,其特征在于所述除去多余结合金属颗粒使溅射板平化的步骤是砂磨平化。
13.如权利要求4所述再生消耗的钽溅射靶的方法,其特征在于所述除去多余结合的金属颗粒物质使溅射板平化的步骤是磨蚀平化。
14.如权利要求4所述再生消耗的溅射靶的方法,其特征在于所述除去多余结合的金属颗粒物质使溅射板平化的步骤是熔入溅射。
15.一种按照权利要求3所述方法再生的溅射靶,使用过的溅射靶的每个消耗表面部位都填充有结合了的金属颗粒,这些金属颗粒互相结合并与表面部位结合。
16.一种再生具有一个或多个消耗表面部位的高熔点金属溅射靶的方法,包括以下步骤:
用金属粉末填充每个消耗表面部位,形成填充部分,该金属粉末具有与高熔点金属溅射靶相同的组成;
当金属粉末落下时,用高能辐射能量束在真空或惰性气体气氛中短时间照射所述填充部分,使高熔点金属粉末间互相结合并与每个消耗表面部位结合;
对溅射靶进行平化,除去结合粉末颗粒物质的凸起部分。
17.如权利要求16所述的方法,其特征在于溅射靶选自钽、铌或它们的合金。
18.如权利要求16所述的方法,其特征在于其中的能量束选自激光束或电子束。
19.如权利要求16所述的方法,其特征在于其中的平化步骤选自机械、砂磨、磨蚀或熔入溅射。
20.按照权利要求16所述方法再生的溅射靶,其特征在于使用过的溅射靶的每个消耗表面部位都填充有与此消耗表面部位结合的密致涂层。
21.再生具有一个或多个局部消耗表面部位的高熔点金属制品的方法,包括以下步骤:
选择提供一种高熔点金属粉末,部分或全部填充高熔点金属制品的每个消耗表面部位,形成填充部分;
当高熔点金属粉末落下时,用高能辐射能量束短时间照射所述的填充部分,使高熔点金属粉末间互相结合并与每个消耗表面部位结合。
22.如权利要求21所述的方法,其特征在于它应用于非高熔点金属上的高熔点金属层压板。
23.如权利要求21所述的方法,其特征在于所述的辐射能量束是激光束。
24.如权利要求21所述的方法,其特征在于所述的辐射能量束是电子束。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26874201P | 2001-02-14 | 2001-02-14 | |
US60/268,742 | 2001-02-14 |
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CN1221684C true CN1221684C (zh) | 2005-10-05 |
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CNB028048210A Expired - Fee Related CN1221684C (zh) | 2001-02-14 | 2002-02-14 | 高熔点金属制品的再生 |
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Country | Link |
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US (1) | US20020112955A1 (zh) |
EP (1) | EP1362132B1 (zh) |
JP (1) | JP2004523653A (zh) |
CN (1) | CN1221684C (zh) |
AT (1) | ATE325906T1 (zh) |
AU (1) | AU2002250075B2 (zh) |
BG (1) | BG64959B1 (zh) |
BR (1) | BR0207202A (zh) |
CA (1) | CA2437713A1 (zh) |
CZ (1) | CZ20032186A3 (zh) |
DE (1) | DE60211309T2 (zh) |
DK (1) | DK1362132T3 (zh) |
ES (1) | ES2261656T3 (zh) |
HK (1) | HK1062902A1 (zh) |
HU (1) | HUP0400730A2 (zh) |
IS (1) | IS6911A (zh) |
MX (1) | MXPA03007293A (zh) |
NO (1) | NO20033567D0 (zh) |
NZ (1) | NZ527503A (zh) |
PL (1) | PL363521A1 (zh) |
PT (1) | PT1362132E (zh) |
RU (1) | RU2304633C2 (zh) |
SK (1) | SK10062003A3 (zh) |
WO (1) | WO2002064287A2 (zh) |
ZA (1) | ZA200306259B (zh) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1608141A (zh) * | 2001-09-17 | 2005-04-20 | 黑罗伊斯有限公司 | 废弃溅射靶的修复 |
EP2278045A1 (en) * | 2002-01-24 | 2011-01-26 | H.C. Starck Inc. | methods for rejuvenating tantalum sputtering targets and rejuvenated tantalum sputtering targets |
US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
US20040065546A1 (en) * | 2002-10-04 | 2004-04-08 | Michaluk Christopher A. | Method to recover spent components of a sputter target |
US7504008B2 (en) * | 2004-03-12 | 2009-03-17 | Applied Materials, Inc. | Refurbishment of sputtering targets |
US20060021870A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Profile detection and refurbishment of deposition targets |
US20060081459A1 (en) * | 2004-10-18 | 2006-04-20 | Applied Materials, Inc. | In-situ monitoring of target erosion |
EP1880036A2 (en) * | 2005-05-05 | 2008-01-23 | H.C. Starck GmbH | Coating process for manufacture or reprocessing of sputter targets and x-ray anodes |
MX2007013600A (es) | 2005-05-05 | 2008-01-24 | Starck H C Gmbh | Metodo para revestir una superficie de bustrato y producto revestido. |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
WO2007052743A1 (ja) * | 2005-11-07 | 2007-05-10 | Kabushiki Kaisha Toshiba | スパッタリングターゲットおよびその製造方法 |
DE102005055255A1 (de) * | 2005-11-19 | 2007-05-31 | Applied Materials Gmbh & Co. Kg | Verfahren zum Herstellen eines Targets |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) * | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) * | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US20110211676A1 (en) * | 2007-08-08 | 2011-09-01 | Koninklijke Philips Electronics N.V. | Method and apparatus for applying material to a surface of an anode of an x-ray source, anode and x-ray source |
US8699667B2 (en) | 2007-10-02 | 2014-04-15 | General Electric Company | Apparatus for x-ray generation and method of making same |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US8043655B2 (en) * | 2008-10-06 | 2011-10-25 | H.C. Starck, Inc. | Low-energy method of manufacturing bulk metallic structures with submicron grain sizes |
FR2953747B1 (fr) * | 2009-12-14 | 2012-03-23 | Snecma | Procede de reparation d'une aube en titane par rechargement laser et compression hip moderee |
DE102010004241A1 (de) * | 2010-01-08 | 2011-07-14 | H.C. Starck GmbH, 38642 | Verfahren zur Herstellung von Funktionsschichten auf der Oberfläche von Werkstücken, eine so hergestellte Funktionsschicht und ein Werkstück |
US9412568B2 (en) | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
JP6532219B2 (ja) * | 2013-11-25 | 2019-06-19 | 株式会社フルヤ金属 | スパッタリングターゲットの再生方法及び再生スパッタリングターゲット |
AT14301U1 (de) * | 2014-07-09 | 2015-07-15 | Plansee Se | Verfahren zur Herstellung eines Bauteils |
CN104439239B (zh) * | 2014-11-06 | 2017-05-03 | 金堆城钼业股份有限公司 | 一种重复利用中频感应烧结炉钨钼废发热体的方法 |
DE102015008921A1 (de) * | 2015-07-15 | 2017-01-19 | Evobeam GmbH | Verfahren zur additiven Herstellung von Bauteilen |
CN107614744B (zh) * | 2015-12-28 | 2020-04-24 | Jx金属株式会社 | 溅射靶的制造方法 |
CN105618753A (zh) * | 2016-03-03 | 2016-06-01 | 中研智能装备有限公司 | 一种轧辊等离子3d打印再制造设备及再制造方法 |
DE102016121951A1 (de) * | 2016-11-15 | 2018-05-17 | Cl Schutzrechtsverwaltungs Gmbh | Vorrichtung zur additiven Herstellung dreidimensionaler Objekte |
JP6650141B1 (ja) * | 2019-01-10 | 2020-02-19 | 株式会社ティー・オール | 使用済み成膜用ターゲットの充填式再生方法 |
KR20210130178A (ko) * | 2019-02-22 | 2021-10-29 | 오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘 | 물리 기상 증착용 타겟의 제조 방법 |
CN110523987B (zh) * | 2019-09-27 | 2021-02-05 | 华中科技大学 | 一种用于致密材料制备的激光烧结同步压制增材制造系统 |
CN111940745B (zh) * | 2019-12-30 | 2024-01-19 | 宁夏东方钽业股份有限公司 | 大松装冶金级钽粉的制造方法 |
CN112522698B (zh) * | 2020-11-26 | 2023-04-25 | 江苏科技大学 | 一种超声振动辅助激光熔覆钨钽铌合金装置及方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6248291B1 (en) * | 1995-05-18 | 2001-06-19 | Asahi Glass Company Ltd. | Process for producing sputtering targets |
DE19626732B4 (de) * | 1996-07-03 | 2009-01-29 | W.C. Heraeus Gmbh | Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
DE19925330A1 (de) * | 1999-06-02 | 2000-12-07 | Leybold Materials Gmbh | Verfahren zur Herstellung oder zum Recyceln von Sputtertargets |
-
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Also Published As
Publication number | Publication date |
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DE60211309D1 (de) | 2006-06-14 |
PT1362132E (pt) | 2006-09-29 |
CN1491294A (zh) | 2004-04-21 |
US20020112955A1 (en) | 2002-08-22 |
PL363521A1 (en) | 2004-11-29 |
BG64959B1 (bg) | 2006-10-31 |
MXPA03007293A (es) | 2005-09-08 |
NO20033567L (no) | 2003-08-12 |
AU2002250075B2 (en) | 2007-03-29 |
RU2304633C2 (ru) | 2007-08-20 |
WO2002064287A3 (en) | 2002-10-10 |
HK1062902A1 (en) | 2004-12-03 |
EP1362132B1 (en) | 2006-05-10 |
EP1362132A4 (en) | 2004-07-28 |
HUP0400730A2 (en) | 2004-08-30 |
JP2004523653A (ja) | 2004-08-05 |
NZ527503A (en) | 2004-07-30 |
BG108059A (en) | 2005-04-30 |
EP1362132A2 (en) | 2003-11-19 |
WO2002064287A2 (en) | 2002-08-22 |
DK1362132T3 (da) | 2006-09-11 |
NO20033567D0 (no) | 2003-08-12 |
DE60211309T2 (de) | 2007-05-24 |
ZA200306259B (en) | 2004-08-13 |
ATE325906T1 (de) | 2006-06-15 |
CZ20032186A3 (cs) | 2004-02-18 |
ES2261656T3 (es) | 2006-11-16 |
BR0207202A (pt) | 2004-01-27 |
RU2003127947A (ru) | 2005-04-10 |
CA2437713A1 (en) | 2002-08-22 |
SK10062003A3 (sk) | 2004-03-02 |
IS6911A (is) | 2003-08-13 |
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