CN103140913B - 用于物理气相沉积腔室的沉积环及静电夹盘 - Google Patents
用于物理气相沉积腔室的沉积环及静电夹盘 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims abstract description 40
- 238000000151 deposition Methods 0.000 title description 34
- 238000005240 physical vapour deposition Methods 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 238000012545 processing Methods 0.000 claims abstract description 29
- 125000004122 cyclic group Chemical group 0.000 claims description 45
- 238000000034 method Methods 0.000 abstract description 55
- 230000008569 process Effects 0.000 abstract description 48
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910000831 Steel Inorganic materials 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- -1 ramet Chemical compound 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
本发明的实施例大体上关于用于半导体处理腔室的处理套件,以及具有该套件的半导体处理腔室。具体而言,此述的实施例关于包括沉积环与底座组件的处理套件。该处理套件的部件单独(及组合)运作以显著地减少它们在处理期间对基板周围的电场的影响。
Description
发明背景
技术领域
本发明的实施例大体上关于用于半导体处理腔室的静电夹盘与处理套件,以及具有处理套件的半导体处理腔室。具体而言,本发明的实施例关于用在物理气相沉积腔室中的处理套件,该处理套件包括至少沉积环。其他实施例关于与无凸缘(flangeless)的静电夹盘一并使用的沉积环以及具有该沉积环的处理腔室。
背景技术
物理气相沉积(PVD)或溅射是在制造电子器件上最普遍使用的制程之一。PVD是在真空腔室中执行的一种等离子体制程,在该真空腔室中受负偏压的靶材暴露至惰性气体等离子体或包含此类惰性气体的气体混合物的等离子体,该惰性气体具有相对重的原子(例如氩(Ar))。惰性气体离子对靶材的轰击造成靶材材料原子射出。射出的原子在基板上(该基板置于腔室内所配置的基板支撑底座上)堆积成沉积膜。
静电夹盘(ESC)可用于在处理期间在处理腔室内支撑及固定基板。ESC一般包括陶瓷定位盘(puck),该定位盘中具有一或更多个电极。将夹持电压施加至电极以静电式将基板持定至ESC。ESC的进一步信息可在1999年6月1日颁发的美国专利第5909355号中找得。
处理套件可配置在腔室中以帮助针对基板将处理区域界定在腔室内的期望区域中。处理套件一般包括覆盖环、沉积环以及接地护罩。将等离子体与射出的原子局限在处理区域有助于维持腔室中其他的部件隔绝沉积材料,并且促进更有效地使用靶材材料,因为更高百分比的射出原子会沉积在基板上。
尽管常规的环与护罩的设计具有强健的处理历史,但仍持续期望在膜均匀度与处理量上有所改善。现存的处理套件设计在处理期间将部件定位成紧密地靠近基板。处理套件部件紧密的靠近可能影响基板周围的电场并且改变沉积在基板的边缘附近的膜的均匀度。
因此,在此技术领域中需要一种改善的处理套件。
发明内容
本发明的实施例大体上提供一种用在物理气相沉积(PVD)腔室中的处理套件以及具有处理套件的PVD腔室。
一个实施例中,提供一种用在基板处理腔室中的沉积环。该沉积环大体上包括第一圆柱、第一环状环、第二圆柱以及第二环状环。该第一圆柱具有第一端与第二端,且该第二端在邻近该第一环状环的内径处耦接该第一环状环的顶部表面的一部分。该第二圆柱具有第一端与第二端。该第二圆柱的该第一端在邻近该第一环状环的外径处耦接该第一环状环的底部表面的一部分。该第二圆柱的该第二端在该第二环状环的内径附近耦接该第二环状环的顶部表面。在该第一圆柱的该第一端与该第二端之间的距离是该第一圆柱的该第一端与该第二环状环的该底部表面之间的距离的至少三分之一。
另一实施例中,提供一种用在基板处理腔室中的处理套件,并且该处理套件包括沉积环与底座组件。该沉积环大体上包括第一圆柱、第一环状环、第二圆柱以及第二环状环。该第一圆柱具有第一端与第二端,且该第二端在邻近该第一环状环的内径处耦接该第一环状环的顶部表面的一部分。该第二圆柱具有第一端与第二端。该第二圆柱的该第一端在邻近该第一环状环的外径处耦接该第一环状环的底部表面的一部分。该第二圆柱的该第二端在邻近该第二环状环的内径处耦接该第二环状环的顶部表面。在该第一圆柱的该第一端与该第二端之间的距离是该第一圆柱的该第一端与该第二环状环的该底部表面之间的距离的至少三分之一。该底座组件配置在该基板处理腔室内。该底座组件包括基板支撑件,该基板支撑件耦接基底板。该沉积环的该第一圆柱具有直径,该第一圆柱的该直径大于该基板支撑件的直径。该第一圆柱的该第一端与该第二端之间的该距离是该基板支撑件的厚度的至少二分之一。该沉积环被支撑在该底座组件上。
另一实施例中,提供一种用在基板处理腔室中的接地护罩。该接地护罩大体上包括外圆柱环,该外圆柱环通过基底连接到内圆柱环。该外圆柱环具有实质上垂直的内壁以及实质上垂直的外壁。
附图说明
通过参考实施例(一些实施例说明于附图中),可获得以上简要总结的本发明的更具体的说明,而能详细了解本发明的上述特征。然而应注意附图仅说明此发明的典型实施例,而因而不应将这些附图视为限制本发明的范围,因为本发明可容许其他等效实施例。
图1是半导体处理系统的简化剖面视图,该半导体处理系统具有处理套件的一个实施例。
图2A说明图1的处理套件的部分剖面。
图2B说明处理套件的另一实施例的部分剖面。
图2C说明处理套件的另一实施例的部分剖面。
图3A说明接地护罩的一实施例的部分剖面。
图3B说明图3A的部分顶视图。
图3C说明图3B中通过剖面线3C—3C所取的部分剖面视图。
为了助于了解,如可能则使用相同元件符号指定共用于各图的相同元件。应考虑到一个实施例中揭露的元件可有利地用于其他实施例而无须进一步叙述。
具体实施方式
本发明的实施例大体上提供用在物理气相沉积(PVD)腔室中的处理套件。在一个实施例中,该处理套件对处理腔内的电场的影响较少,此举促进更大的制程均匀度与再现性。
图1描绘示范性半导体处理腔室100,该腔室100具有能够处理基板105的处理套件150的一个实施例。处理套件150包括至少沉积环180,该沉积环180被支撑在底座组件120上,并且该处理套件150也包括一片式的接地护罩160与交错的覆盖环170。在所示的版本中,处理腔室100包含溅射腔室,该溅射腔室又称物理气相沉积腔室或PVD腔室,能够沉积金属或陶瓷材料,尤其是沉积例如钛、氧化铝、铝、铜、钽、氮化钽、碳化钽、钨、氮化钨、镧、氧化镧、氮化钛、镍、与NiPt。可适于受惠于本发明的处理腔室的一个范例是Plus与SIPPVD处理腔室,可购自美国加州圣克拉拉市的应用材料公司。应考虑到包括来自其他销售商的其他的处理腔室可适于受惠于本发明。
处理腔室100包括包围内部空间110或等离子体区块的腔室主体101、腔室底部106与盖组件108,该腔室主体101具有上配接器102与下配接器104。腔室主体101一般是通过切削及熔接不锈钢板或通过切削单一块铝而制成。一个实施例中,下配接器104包含铝而腔室底部106包含不锈钢。腔室底部106大体上含有狭缝阀(图中未示)以提供基板105进出处理腔室100。处理腔室100的盖组件108与接地护罩160一起将内部空间110中形成的等离子体局限在基板上方的区域,该接地护罩160与覆盖环170交错。
底座组件120是从腔室100的腔室底部106受到支撑。处理期间,底座组件120支撑沉积环180与基板105。底座组件120通过举升机构122耦接腔室100的腔室底部106,该举升机构被配置成在上方位置与下方位置之间移动底座组件120。此外,在下方位置,举升销(图中未示)移动通过底座组件120以将基板与底座组件120隔开,以有助于与晶圆传输机构交换基板,该晶圆传输机构配置在处理腔室100的外部,诸如为单刀机械臂(图中未示)。波纹管124一般是配置在底座组件120与腔室底部106之间,以将腔室主体101的内部空间110隔离于底座组件120的内部以及腔室外部。
底座组件120大体上包括基板支撑件126,该基板支撑件126以密封式耦接基底板128,该基底板128耦接接地板(ground plate)125。基板支撑件126可由铝或陶瓷构成。基板支撑件126可以是静电夹盘、陶瓷主体、加热器或前述部件的组合。一个实施例中,基板支撑件126是静电夹盘,该静电夹盘包括介电主体,在该介电主体中嵌有电极138。介电主体一般是由高热导性的介电材料制成,诸如热解氮化硼、氮化铝、氮化硅、氧化铝或等效材料。如图2A所示,基板支撑件126具有底部表面154。底部表面154与基板接收表面127之间的垂直距离“V”是诸如介于约0.30至约0.75英寸之间(约0.76厘米至约1.91厘米之间),例如0.25英寸(0.64厘米)。回到图1,一个实施例中,基板支撑件126通过金属箔112附接基底板128,该金属箔诸如为铝箔,该金属箔扩散接合基底板128与基板支撑件126。
基底板128可包含热性质合适地匹配上覆的基板支撑件126的材料。例如基底板128可包含陶瓷与金属的复合物,诸如铝碳化硅,该复合物比单独的陶瓷提供更佳的强度与耐用性并且也具有良好的传热性质。该复合材料具有匹配基板支撑件126材料的热膨胀系数,以减少热膨胀上的不匹配。在一个版本中,复合材料包含具有孔隙的陶瓷,该陶瓷的孔隙被金属浸透,该金属至少部分填充这些孔隙以形成复合材料。该陶瓷可包含例如碳化硅、氮化铝、氧化铝、或堇青石的至少一者。该陶瓷可包含一孔隙体积,该孔隙体积是总体积的约20%至约80%(以体积百分比计),其余的体积是浸透的金属。浸透的金属可包含铝以及添加的硅,也可含有铜。另一版本中,复合物可包含陶瓷与金属的不同组成物,诸如具有分散的陶瓷粒子的金属;或该基底板128可以仅由金属制成,诸如不锈钢或铝。冷却板(图中未示)大体上配置在基底板128内以在热能上调节基板支撑件126,但也可配置在接地板125内。
接地板125一般是由金属材料制成,诸如不锈钢或铝。基底板128可通过多个连接器137耦接接地板。连接器137可为螺栓、螺钉、扳手(key)或任何其他类型的连接器之一。基底板128可从接地板125移除,以有助于便利地更换及维修基板支撑件126与基底板128。
基板支撑件126具有基板接收表面127,该表面127在处理期间接收与支撑基板105且具有实质上平行靶材132的溅射表面133的平面。基板支撑件126也具有周围边缘129,该周围边缘在基板105的伸出边缘之前终止。基板支撑件126的周围边缘129具有介于约275mm至约300mm之间的直径。如上文所讨论,基板支撑件126高于常规支撑件而具有超过约0.25英寸(约0.64厘米)的高度,诸如介于约0.30至约0.75英寸之间(约0.76厘米至约1.91厘米)。相对高的基板支撑件126的高度利于将基板垂直地隔开处理套件150的沉积环180的水平表面,此在下文中将近一步描述。
盖组件108大体上包括靶材背板130、靶材132与磁控管134。靶材背板130处于关闭位置时受到上配接器102支撑,如图1所示。陶瓷环密封件136配置在靶材背板130与上配接器102之间,以防止靶材背板130与上配接器102之间的真空漏泄。
靶材132耦接靶材背板130并且暴露到处理腔室100的内部空间110。靶材132提供PVD制程期间沉积在基板上的材料。隔离环198配置在靶材132、靶材背板130与腔室主体101之间,以将靶材132电隔离于靶材背板130以及腔室主体101的上配接器102。
通过功率源140以相对于接地(例如腔室主体101)的RF及/或DC功率对靶材132施加偏压。诸如氩气的气体从气源142通过导管144供应到内部空间110。气源142可包含非反应性气体,诸如氩气或氙气,该非反应性气体能够充满能量地冲射在靶材132上并且从靶材132溅射材料。气源142也可包括反应性气体,诸如含氧气体、含氮气体、含甲烷气体之一或更多者,该反应性气体能够与溅射材料反应以在基板上形成一层。废弃的处理气体与副产物通过排气口146从腔室100排出,该排气口146接收废弃的处理气体并且将该废弃的处理气体引导到排气导管148,该排气导管148具有节流阀以控制腔室100中气体的压力。排气导管148连接到一或更多个排气泵149。一般而言,腔室100中溅射气体的压力被设定在次大气压等级(诸如真空环境),例如,气压为0.6毫托至400毫托。等离子体从基板105与靶材132之间的气体形成。等离子体内的离子朝靶材132加速并且引发材料从靶材132转而脱落。脱落的靶材材料沉积在基板上。
磁控管134在处理腔室100外部上耦接靶材背板130。可利用的一种磁控管描述于美国专利第5,953,827号中,该专利于1999年9月21日颁发给Or等人,该全文在此以引用的形式并入。
在腔室100中执行的制程是受到控制器190控制,该控制器190包含具有指令集的程序代码以操作腔室100的部件而助于在腔室100中处理基板。例如,控制器190可包含程序代码,该程序代码包括:基板定位指令集,以操作底座组件120;气体流量控制指令集,以操作气体流量控制阀而设定溅射气体至腔室100的流量;气体压力控制指令集,以操作节流阀而维持腔室100中的压力;温度控制指令集,以控制底座组件120中或下配接器104中的温度控制系统(图中未示),而分别设定基板或下配接器104的温度;以及制程监视指令集,以监视腔室100中的制程。
处理套件150包含各种可从腔室100方便地移出的部件,例如以从部件表面清洁移除溅射沉积物、更换或修护受侵蚀的部件,或使腔室100适于用在其他制程。一个实施例中,处理套件150包括至少该沉积环180,但也可包括接地护罩160与覆盖环170。一个实施例中,覆盖环170与沉积环180被放置在基板支撑件126的周围边缘129附近。
接地护罩160受腔室主体101支撑并且围绕溅射靶材132面向基板支撑件126的溅射表面133。接地护罩160也环绕基板支撑件126的周围边缘129。接地护罩160覆盖并且遮蔽腔室100的下配接器104以减少源自溅射靶材132的溅射表面133的溅射沉积物沉积在接地护罩160后方的部件与表面上。
图2A是配置在底座组件120周围的处理套件150的部分剖面视图,该图更详细地说明沉积环180、覆盖环170与接地护罩160。沉积环180大体上包括第一圆柱201、第一环状环202、第二圆柱203与第二环状环204。可将该第一圆柱201、第一环状环202、第二圆柱203与第二环状环204形成为一体的结构。沉积环180可由陶瓷或金属材料制成,诸如石英、氧化铝、不锈钢、钛或其他适合的材料。第一圆柱201具有实质上垂直的内壁216,该内壁围绕该基板支撑件126的周围边缘129。一个实施例中,该基板支撑件126具有介于275mm至300mm之间(诸如约280mm至295mm)的直径。第一圆柱201具有一直径与厚度,使得该第一圆柱201的外径不实质上伸出越过基板105的伸出边缘。例如,第一圆柱201可具有介于280mm至305mm之间(诸如约290mm至300mm)的内径。另一实施例中,第一圆柱的内壁216可具有约11.615英寸至约11.630英寸(约295mm)的直径。第一圆柱201可具有约11.720至约11.890英寸(约302mm)的外径。第一圆柱201可具有介于约0.071至约0.625英寸(约0.18至约1.59cm)之间的厚度,例如0.29英寸(0.74cm)。第一圆柱201具有第一端205与第二端206,该两端界定上表面与下表面。第一端205与第一圆柱201的外径的交叉处可包括阶梯或切口209。第一圆柱201的高度(例如介于第一端205与第二端206之间的距离)低于基板支撑件126的高度。例如,第一圆柱201可具有大于约0.25英寸(约0.64cm)的高度,例如介于约0.440至约0.420英寸(约1.12至约1.07cm)之间,使得第一端205与基板105被间隙251分开。间隙251将沉积环180电隔离于基板105,同时尽量减少材料沉积在基板105背侧的可能性。切口209局部地增加基板边缘处的间隙251。间隙251具有垂直距离“X”(例如第一端205至基板接收表面127之间的距离),该距离X介于约0.001英寸(约2.54mm)至约0.02英寸(约50.80mm)之间,例如0.007英寸(17.78mm)。
第一圆柱201的第二端206在邻近第一环状环202的内径处耦接第一环状环202的顶部表面207。在顶部表面207与第一端205之间的垂直距离“Y”介于约0.15英寸(约0.38cm)至约1.0英寸(约2.54cm)之间,例如0.343英寸(0.87cm)。增加垂直距离Y减少基板105边缘上的接地电位的影响并且产生较佳的沉积均匀度。第二圆柱203的第一端220在邻近第一环状环202的外径处耦接第一环状环202的底部表面208。第二圆柱203的第二端210在邻近第二环状环204的内径处耦接第二环状环204的顶部表面211。在一个实施例中,当沉积环180定位在底座组件120上时,在第二圆柱203径向上向外的沉积环180的所有垂直或接近垂直的表面在垂直方向上比基板支撑件126的基板接收表面127低超过0.25英寸(0.64cm)。
一个实施例中,第一圆柱201的第一端205与第二端206之间的距离是基板支撑件126的厚度的至少一半。另一实施例中,第一圆柱201构成沉积环180的总厚度的至少三分之一,该总厚度是界定在第一圆柱201的第一端205与第二环状环204的底部表面212之间。
一个实施例中,第一环状环202的底部表面208可安放在基底板128的凸耳(ledge)上,同时第二环状环204的底部表面212维持与基底板128隔开的关系,如图2A所示。另一实施例中,冷却导管152可配置在基底板128中,如图2A中所示。另一实施例中,第一环状环202的底部表面208可安置在凸耳217上(该凸耳从基板支撑件126在径向上向外延伸),同时第二环状环204的底部表面212维持与基底板128隔开的关系,如图2B所示。凸耳217可定位成离基板支撑件126的基板接收表面127一垂直距离,该垂直距离为0.25英寸(0.64cm)以上,诸如0.40英寸(1.02cm)以上。基板支撑件可具有大于0.25英寸(0.64cm)的厚度,例如大于0.40英寸(1.02cm)。基板支撑件126的厚度被配置成使得第一环状环202的顶部表面207在垂直方向上离基板支撑件126的基板接收表面127大于0.25英寸(0.64cm),例如大于0.30英寸(0.76cm)。
回到图2A,第二环状环204的顶部表面211包括抬升的环状内垫213,该抬升的环状内垫213与抬升的环状外垫214被沟槽215分开。抬升的环状内垫213比抬升的环状外垫214更进一步地延伸于第二环状环204的顶部表面211上方。抬升的环状外垫214支撑覆盖环170。沉积环180的一部分可被Al电弧喷涂物涂布。
沉积环180与覆盖环170相互合作以减少溅射沉积物形成于基板支撑件126的周围边缘与基板105的伸出边缘上。覆盖环170具有顶部表面172。覆盖环170围绕并且至少部分覆盖沉积环180以接收大量溅射沉积物,从而遮蔽沉积环180以隔离大量溅射沉积物。覆盖环170是由能够抗溅射等离子体侵蚀的材料制成,该材料例如为金属性材料或陶瓷材料,该金属性材料诸如不锈钢、钛或铝,该陶瓷材料诸如氧化铝。一个实施例中,覆盖环170由纯度为至少约99.9%的钛构成。一个实施例中,覆盖环170的表面是用双丝铝电弧喷涂涂层处理(例如CLEANCOATTM),以减少粒子从覆盖环170的表面脱落。
覆盖环170包括楔形物242,该楔形物242耦接环状主体245。楔形物242可包括倾斜的顶部表面244,该表面244在径向上向内呈现坡度并且围绕基板支撑件126。楔形物242也可包括突出的球状板缘(brim)250,该板缘向下朝抬升的环状内垫213延伸。突出的板缘250减少溅射材料在沉积环180的外上表面上的沉积。
覆盖环170进一步包含基脚252,该基脚252从楔形物242的倾斜顶部表面244向下延伸,以安置在沉积环180的抬升环状外垫214上。一个实施例中,双阶表面形成于基脚252与突出板缘250的下表面之间。
覆盖环170进一步包含从环状主体245向下延伸的内圆柱状环254以及外圆柱状环256,以在该二圆柱状环之间界定一间隙,该间隙使环254、256得以与接地护罩160交错。内圆柱状环254与外圆柱状环256位于环状楔形物242的基脚252的径向上向外处。内圆柱状环254可具有小于外圆柱状环256的高度。此外,该二环254、256皆在基脚252下方延伸。覆盖环170尽可能远地坐落于基板105垂直方向上的下方,以缓和覆盖环170可能对环绕基板105的电场的影响。顶部表面172与第一端205之间的垂直距离“Z”介于约0.15英寸(约0.38cm)至约1.0英寸(约2.54cm)之间,例如0.282英寸(0.72cm)。增加垂直距离Z减少了基板105的边缘上接地电位的影响并且产生更佳的沉积均匀度。
接地护罩160具有内壁258。介于内壁258与基板105的边缘之间的水平距离“U”是介于约1.80英寸(约4.57cm)至4.5英寸(11.43cm)之间,例如2.32英寸(5.89cm)。接地护罩160与覆盖环170之间的空间或间隙264形成回旋的S形通路或迂回曲径以防止等离子体行进穿过该空间或间隙。该通路的形状是有利的,举例而言,此是因为它妨碍并且阻碍等离子体物质侵入此区域,故减少了非期望的溅射材料的沉积。
一个实施例中,可增加接地护罩160的内径,以将覆盖环170与基板105隔开得更远,如图2C中所示。将覆盖环170与基板105隔开减少覆盖环170对基板105附近电场的影响。增加的接地护罩160的内径可增加基板105的沉积均匀度约50%至约75%之间。沉积环180的部件可向外延伸更大的径向距离,以维持覆盖环170的最适位置,举例而言,相较于第二环状环204,第二环状环218可具有较大的径向长度,使得覆盖环170的内径在径向上位于底座组件120的向外处。
一个实施例中,图2C的接地护罩160可以是接地护罩300,如图3A所示。接地护罩300具有内圆柱状环302与外圆柱状环304。内圆柱状环302通过基底326连接外圆柱状环304。外圆柱状环304具有第一顶部表面306、第二顶部表面308、底部表面310、第一内边缘322与第一外边缘324。第一内边缘322以一半径会合第一外边缘324,该半径介于约0.8英寸(约2.03cm)至约0.12英寸(0.30cm)之间,例如0.10英寸(0.25cm)。第一内边缘322邻接第一顶部表面306,而第一外边缘324邻接底部表面310。内圆柱状环302具有顶部表面314。第一顶部表面306与底部表面310之间的垂直距离“U”介于约0.16英寸(约0.41cm)至约0.20英寸(约0.51cm)之间,例如0.18英寸(0.46cm)。第一顶部表面306与第二顶部表面308之间的垂直距离“V”是介于约0.02英寸(约0.05cm)至约0.06英寸(约0.15cm)之间,例如0.04英寸(0.10cm)。第二顶部表面308与底部表面310之间的垂直距离“W”是介于约0.20英寸(约0.51cm)至约0.24英寸(约0.61cm)之间,例如0.22英寸(0.56cm)。外圆柱状环主体312具有一厚度,该厚度介于约0.11英寸(约0.28cm)至约0.15英寸(约0.38cm)之间,例如0.13英寸(0.33cm)。内圆柱状环302的顶部表面314与外圆柱状环304的底部表面310之间的垂直距离“X”是介于约6.22英寸(约15.8cm)至约6.26英寸(约15.9cm)之间,例如6.24英寸(15.85cm)。外圆柱状环304具有实质上垂直的第一外壁316且外径是在约17.87英寸(约45.39cm)至约17.91英寸(约45.49cm)之间,例如17.89英寸(45.44cm)。外圆柱状环304具有第二外壁328以及实质上垂直的内壁318。实质上垂直的内壁318可经纹理化,例如通过珠磨或其他适合的可纹理化实质上垂直的内壁318的制程。实质上垂直的内壁318也可用铝电弧喷涂法来喷涂。实质上垂直的内壁318与第一内边缘322会合,而实质上垂直的第一外壁316与第一外边缘324会合。第二外壁328邻接底部表面310与第二顶部表面308。
图3B是图3A的部分顶视图,且图3C是通过图3B中的剖面线3C—3C所取的部分剖面视图。接地护罩300具有切口340以及螺栓342,该螺栓342形成在切口340的底部表面中。该螺栓342以环形阵列(polar array)位于接地护罩300中,在接地护罩300中具有约12个螺栓342。可通过使用端铣刀或其他适合的工具形成切口340。
如所述的处理套件150的部件单独与组合运作以显著地减少对基板边缘附近的电场的影响。
虽然前文针对本发明的实施例,但是可设计本发明的其他与进一步的实施例,而不背离本发明的基本范围,且本发明的范围由随后的权利要求确定。
Claims (5)
1.一种用在基板处理腔室中的沉积环,包含:
第一圆柱,所述第一圆柱具有第一端与第二端;
第一环状环,包含:
内径;
外径;
顶部表面;以及
底部表面,所述底部表面与所述顶部表面相对,其中所述第一环状环通过所述顶部表面的一部分耦接所述第一圆柱的所述第二端,所述顶部表面的所述部分邻接所述第一环状环的所述内径;
第二圆柱,所述第二圆柱在第一端耦接所述底部表面的一部分,所述底部表面的所述部分邻接所述第一环状环的所述外径;
第二环状环,包含:
内径;
外径;
顶部表面;以及
底部表面,所述底部表面与所述顶部表面相对,其中与所述第二环状环的所述内径邻接的所述顶部表面的一部分耦接与所述第一端相对的所述第二圆柱的第二端,且其中在所述第一圆柱的所述第一端与所述第二端之间的距离是所述第一圆柱的所述第一端与所述第二环状环的所述底部表面之间的距离的至少三分之一。
2.如权利要求1的沉积环,其中所述第二环状环的所述顶部表面包含:
抬升的环状外垫,定位成邻接所述第二环状环的所述外径;
抬升的环状内垫,定位成在所述抬升的环状外垫的径向上向内处;以及
沟槽,定位在所述抬升的环状外垫与所述抬升的环状内垫之间。
3.如权利要求2的沉积环,其中所述抬升的环状外垫与所述抬升的环状内垫不在共用的平面上。
4.如权利要求1的沉积环,其中所述第一圆柱的所述第一端包含切口,所述切口定位成在径向上向外。
5.如权利要求1的沉积环,其中所述第二环状环的所述外径是至少部分渐缩。
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US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
CN101563560A (zh) * | 2006-12-19 | 2009-10-21 | 应用材料公司 | 非接触式处理套件 |
Also Published As
Publication number | Publication date |
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US8911601B2 (en) | 2014-12-16 |
TW201225205A (en) | 2012-06-16 |
US9689070B2 (en) | 2017-06-27 |
WO2012057987A2 (en) | 2012-05-03 |
CN105177519B (zh) | 2018-03-27 |
US20180010242A1 (en) | 2018-01-11 |
CN108359957A (zh) | 2018-08-03 |
US20120103257A1 (en) | 2012-05-03 |
KR101585883B1 (ko) | 2016-01-15 |
CN103140913A (zh) | 2013-06-05 |
KR20130133194A (ko) | 2013-12-06 |
TWI508219B (zh) | 2015-11-11 |
US20160340775A1 (en) | 2016-11-24 |
US20130112554A1 (en) | 2013-05-09 |
WO2012057987A3 (en) | 2012-07-19 |
CN105177519A (zh) | 2015-12-23 |
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