KR960032775A - 반도체 장치 제조 방법 - Google Patents

반도체 장치 제조 방법 Download PDF

Info

Publication number
KR960032775A
KR960032775A KR1019960003814A KR19960003814A KR960032775A KR 960032775 A KR960032775 A KR 960032775A KR 1019960003814 A KR1019960003814 A KR 1019960003814A KR 19960003814 A KR19960003814 A KR 19960003814A KR 960032775 A KR960032775 A KR 960032775A
Authority
KR
South Korea
Prior art keywords
substrate
forming
insulating film
film
silicon film
Prior art date
Application number
KR1019960003814A
Other languages
English (en)
Other versions
KR100288111B1 (ko
Inventor
순페이 야마자끼
야스유키 아라이
사토시 데라모토
Original Assignee
순페이 야마자끼
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 순페이 야마자끼, 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 순페이 야마자끼
Publication of KR960032775A publication Critical patent/KR960032775A/ko
Application granted granted Critical
Publication of KR100288111B1 publication Critical patent/KR100288111B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Abstract

본 발명의 반도체 장치 제조 방법은, 제1기판상에 제1절연막을 형성하는 단계; 그 제1절연막상에 제2절연막을 형성하는 단계; 그 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화를 조장하는 금속 원소를 비정질 규소막의 표면에 접촉시켜 유지하는 단계; 가열 처리에 의해 비정질 규소막을 결정화시켜 결정성 규소막을 얻는 단계; 그 결정성 규소막을 사용하여 박막 트랜지스터를 형성하는 단계; 그 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 밀봉층에 접합하는 단계; 및 제1기판을 박리하기 위해 제1절연막을 제거하는 단계를 포함한다.

Description

반도체 장치 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1(A)도∼제1(D)도는 본 발명의 일 실시예에 따른 액정 패널을 제조하는 공정을 나타내는 도면.

Claims (27)

  1. 제1기판상에 제1절연막을 형성하는 단계; 상기 제1절연막상에 제2절연막을 형성하는 단계; 상기 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화 조장하는 금속 원소를 상기 비정질 규소막의 표면에 접촉시켜 유지하는 단계; 결정성 규소막을 얻기 위해 가열 처리에 의해 상기 비정질 규소막을 결정화시키는 단계; 상기 결정성 규소막을 사용하여 박막 트랜지스터를 형성하는 단계; 상기 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 상기 밀봉층에 접합하는 단계; 및 상기 제1기판을 박리하기 위해 상기 제1절연막을 제거하는 단계를 포함하는 반도체 장치 제조 방법.
  2. 제1항에 있어서, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au으로부터 선택된 1종류 또는 다수 종류의 원소가 규소의 결정화를 조장하는 상기 금속 원소로 사용되는 반도체 장치 제조 방법.
  3. 제1항에 있어서, 상기 결정성 규소막이 규소의 결정화를 조장하는 상기 금속 원소를 1×1014∼5×1018원자㎝-3의 밀도로 함유하고, 소수 및/또는 할로겐을 0.0005∼5원자%의 밀도로 함유하는 반도체 장치 제조 방법.
  4. 제1항에 있어서, 상기 제1기판이 유리 기판이나 석영 기판으로 형성된 반도체 장치 제조 방법.
  5. 제1항에 있어서, 상기 제2기판이 반투명 성질을 가지며, 가요성 수지 기판을 형성된 반도체 장치 제조 방법.
  6. 제3항에 있어서, 상기 할로겐이 불소, 염소 또는 브롬인 반도체 장치 제조 방법.
  7. 표면에 홈이 형성된 제1기판상에 제1절연막을 형성하는 단계; 상기 제1절연막상에 제2절연막을 형성하는 단계; 상기 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화 조장하는 금속 원소를 상기 비정질 규소막의 표면에 접촉시켜 유지하는 단계; 결정성 규소막을 얻기 위해 가열 처리에 의해 상기 비정질 규소막을 결정화시키는 단계; 상기 결정성 규소막을 사용하여 박막 트랜지스터를 형성하는 단계; 상기 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 상기 밀봉층에 접합하는 단계; 및 상기 제1기판을 박리하기 위해 에칭 용매를 사용하여 상기 제1절연막을 제거하는 단계를 포함하는 반도체 장치 제조 방법.
  8. 제7항에 있어서, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au으로부터 선택된 1종류 또는 다수 종류의 원소가 규소의 결정화를 조장하는 상기 금속 원소로 사용되는 반도체 장치 제조 방법.
  9. 제7항에 있어서, 상기 결정성 규소막이 규소의 결정화를 조장하는 상기 금속 원소를 1×1014∼5×1018원자㎝-3의 밀도로 함유하고, 소수 및/또는 할로겐을 0.0005∼5원자%의 밀도로 함유하는 반도체 장치 제조 방법.
  10. 제7항에 있어서, 상기 제1기판이 유리 기판이나 석영 기판으로 형성된 반도체 장치 제조 방법.
  11. 제7항에 있어서, 상기 제2기판이 반투명 성질을 가지며, 가요성 수지 기판으로 형성된 반도체 장치 제조 방법.
  12. 표면에 홈이 형성된 제1기판상에 제1절연막을 형성하는 단계; 상기 제1절연막상에 제2절연막을 형성하는 단계; 상기 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화 조장하는 금속 원소를 상기 비정질 규소막의 표면에 접촉시켜 유지하는 단계; 결정성 규소막을 얻기 위해 가열 처리에 의해 상기 비정질 규소막을 결정화시키는 단계; 상기 결정성 규소막을 사용하여 박막 트랜지스터를 형성하는 단계; 상기 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 상기 밀봉층에 접합하는 단계; 및 상기 제1기판을 박리하기 위해 에칭 용매를 사용하여 상기 제1절연막을 제거하는 단계를 포함하고, 상기 홈의 바닥 부분과 상기 제1절연막 사이에 간극이 형성되고, 상기 에칭 용매가 상기 간극에 들어가는 반도체 장치 제조 방법.
  13. 제12항에 있어서, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au으로부터 선택된 1종류 또는 다수 종류의 원소가 규소의 결정화를 조장하는 상기 금속 원소로 사용되는 반도체 장치 제조 방법.
  14. 제12항에 있어서, 상기 결정성 규소막이 규소의 결정화를 조장하는 상기 금속 원소를 1×1014∼5×1018원자㎝-3의 밀도로 함유하고, 소수 및/또는 할로겐을 0.0005∼5원자%의 밀도로 함유하는 반도체 장치 제조 방법.
  15. 제12항에 있어서, 상기 제1기판이 유리 기판이나 석영 기판으로 형성된 반도체 장치 제조 방법.
  16. 제12항에 있어서, 상기 제2기판이 반투명 성질을 가지며, 가요성 수지 기판으로 형성된 반도체 장치 제조 방법.
  17. 제14항에 있어서, 상기 할로겐이 불소, 염소 또는 브롬인 반도체 장치 제조 방법.
  18. 제1기판상에 제1절연막을 형성하는 단계; 상기 제1절연막상에 제2절연막을 형성하는 단계; 상기 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화를 조장하는 금속 원소를 상기 비정질 규소막의 표면에 접촉시켜 유지하는 단계; 상기 비정질 규소막에 레이저 비임을 조사하여, 그 레이저 비임이 조사된 영역을 단결정과 닮은 영역 또는 사실상 단결정과 닮은 영역으로 변경시키는 단계; 상기 단결성과 닮은 영역 또는 사실상 단결정과 닮은 영역을 활성층으로 사용하여 박막 트랜지스터를 형성하는 단계; 상기 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 상기 밀봉층에 접합하는 단계; 및 상기 제1기판을 박리하기 위해 상기 제1절연막을 제거하는 단계를 포함하는 반도체 장치 제조 방법.
  19. 제18항에 있어서, 상기 제2기판이 반투명 성질과 가요성을 가지는 수지 기판을 포함하고, 상기 활성층내의 응력이 레이저 비임의 조사 후 가열 처리를 행함으로써 완화되는 반도체 장치 제조 방법.
  20. 단결정과 닮은 영역 또는 사실상 단결정과 닮은 영역이 결정입계를 사실상 포함하지 않고, 결함을 보상하기 위한 수소 원자 및/또는 할로겐 원자를 1×1015∼1×1020원자㎝-3의 밀도로 함유하며, 탄소 원자와 질소 원자를 1×1016∼5×10|18원자㎝-3의 밀도로 함유하고, 산소 원자를 1×1017∼5×1019원자㎝-3의 밀도로 함유하는 반도체 장치 제조 방법.
  21. 제1기판상에 제1절연막을 형성하는 단계; 상기 제1절연막상에 제2절연막을 형성하는 단계; 상기 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화를 조장하는 금속 원소를 상기 비정질 규소막의 표면에 접촉시켜 유지하는 단계; 상기 비정질 규소막에 레이저 비임을 조사하여, 그 레이저 비임이 조사된 영역을 결정성을 가지는 영역으로 변경시키는 단계; 상기 결정성을 가지는 영역을 활성층으로 사용하여 박막 트랜지스터를 형성하는 단계; 상기 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 상기 밀봉층에 접합하는 단계; 및 상기 제1기판을 박리하기 위해 상기 제1절연막을 제거하는 단계를 포함하는 반도체 장치 제조 방법.
  22. 제21항에 있어서, 상기 제2기판이 가용성을 가지는 수지 기판을 포함하고, 상기 활성층내의 응력이 레이저 비임의 조사 후 가열 처리를 행함으로써 완화되는 반도체 장치 제조 방법.
  23. 석영을 포함하는 제1기판상에 제1절연막을 형성하는 단계; 상기 제1절연막상에 제2절연막을 형성하는 단계; 상기 제2절연막상에 비정질 규소막을 형성하는 단계; 규소의 결정화를 조장하는 금속 원소를 상기 비정질 규소막이 표면에 접촉시켜 유지하는 단계; 결정성 규소막을 얻기 위해 가열 처리에 의해 상기 비정질 규소막을 결정화시키는 단계; 상기 결정성 규소막의 표면에 열산화막을 형성하도록, 그리고 상기 결정성 규소막에 존재하는 상기 금속 원소를 제거 또는 감소시키기 위해 상기 금속 원소를 상기 열산화 막내로 게터링하도록, 할로겐 원소를 함유하는 산화 분위기에서 상기 결정성 규소막에 열 처리를 행하는 단계; 상기 열산화막을 제거하는 단계; 상기 결정성 규소막을 사용하여 박막 트랜지스터를 형성하는 단계; 상기 박막 트랜지스터를 밀봉하는 밀봉층을 형성하는 단계; 반투명 성질을 가지는 제2기판을 상기 밀봉층에 접합하는 단계; 및 상기 제1기판을 박리하기 위해 상기 제1절연막을 제거하는 단계를 포함하는 반도체 장치 제조 방법.
  24. 제23항에 있어서, 박막 트랜지스터를 형성하는 상기 단계가, 상기 결정성 규소막을 패터닝하여 상기 박막 트랜지스터의 활성층으로 되게 하고; 상기 활성층의 표면에 상기 열산화막을 형성하는 것을 포함하는 반도체 장치 제조 방법.
  25. 제23항에 있어서, Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu 및 Au으로 이루어진 군으로부터 선택된 1종류 또는 다수 종류의 원소가 상기 금속 원소로 사용되는 반도체 장치 제조 방법.
  26. 제23항에 있어서, 상기 산화 분위기가 HCI, HF, HBr, Cl2, F2및 Br2로 이루어진 군으로부터 선택된 1종류 또는 다수 종류의 가스를 포함하는 반도체 장치 제조 방법.
  27. 제23항에 있어서, 상기 제2기판이 반투명이 가용성 수지 기판을 포함하는 반도체 장치 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960003814A 1995-02-16 1996-02-16 반도체 장치 제조방법 KR100288111B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5321995 1995-02-16
JP95-53219 1995-02-16

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020000032627A Division KR100302403B1 (ko) 1995-02-16 2000-06-14 반도체장치 제작방법
KR1020000032628A Division KR100427906B1 (ko) 1995-02-16 2000-06-14 반도체 장치

Publications (2)

Publication Number Publication Date
KR960032775A true KR960032775A (ko) 1996-09-17
KR100288111B1 KR100288111B1 (ko) 2001-06-01

Family

ID=12936724

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1019960003814A KR100288111B1 (ko) 1995-02-16 1996-02-16 반도체 장치 제조방법
KR1020000032627A KR100302403B1 (ko) 1995-02-16 2000-06-14 반도체장치 제작방법
KR1020000032628A KR100427906B1 (ko) 1995-02-16 2000-06-14 반도체 장치
KR1020010044131A KR100376801B1 (ko) 1995-02-16 2001-07-23 반도체장치 제조방법
KR1020040001082A KR100432589B1 (ko) 1995-02-16 2004-01-08 반도체장치 제조방법

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020000032627A KR100302403B1 (ko) 1995-02-16 2000-06-14 반도체장치 제작방법
KR1020000032628A KR100427906B1 (ko) 1995-02-16 2000-06-14 반도체 장치
KR1020010044131A KR100376801B1 (ko) 1995-02-16 2001-07-23 반도체장치 제조방법
KR1020040001082A KR100432589B1 (ko) 1995-02-16 2004-01-08 반도체장치 제조방법

Country Status (3)

Country Link
US (7) US5821138A (ko)
JP (6) JP3364081B2 (ko)
KR (5) KR100288111B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100500033B1 (ko) * 1996-10-15 2005-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치

Families Citing this family (339)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445535B1 (en) 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
US7465679B1 (en) * 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
JPH0869967A (ja) 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2900229B2 (ja) * 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
TWI228625B (en) 1995-11-17 2005-03-01 Semiconductor Energy Lab Display device
JPH09146108A (ja) 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
TW309633B (ko) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
US6204101B1 (en) * 1995-12-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6063654A (en) * 1996-02-20 2000-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor involving laser treatment
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
US6100562A (en) * 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6133119A (en) * 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
KR100481994B1 (ko) 1996-08-27 2005-12-01 세이코 엡슨 가부시키가이샤 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치
DE69735023T2 (de) 1996-09-19 2006-08-17 Seiko Epson Corp. Verfahren zur Herstellung einer Matrixanzeigevorrichtung
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
USRE38466E1 (en) 1996-11-12 2004-03-16 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JPH10199807A (ja) 1996-12-27 1998-07-31 Semiconductor Energy Lab Co Ltd 結晶性珪素膜の作製方法
JPH10198292A (ja) * 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6011275A (en) 1996-12-30 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JPH10200114A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3856889B2 (ja) * 1997-02-06 2006-12-13 株式会社半導体エネルギー研究所 反射型表示装置および電子デバイス
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3544280B2 (ja) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3856901B2 (ja) 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
JP4566294B2 (ja) * 1997-06-06 2010-10-20 株式会社半導体エネルギー研究所 連続粒界結晶シリコン膜、半導体装置
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP4566295B2 (ja) * 1997-06-10 2010-10-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501094B1 (en) 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US5940693A (en) * 1997-07-15 1999-08-17 Sharp Laboratories Of America, Inc. Selective silicide thin-film transistor and method for same
JPH1140498A (ja) * 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
KR100271043B1 (ko) * 1997-11-28 2000-11-01 구본준, 론 위라하디락사 액정표시장치의 기판 및 그 제조방법(liquid crystal display and method of manufacturing the same)
JP4236722B2 (ja) 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3809733B2 (ja) 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP4126747B2 (ja) 1998-02-27 2008-07-30 セイコーエプソン株式会社 ３次元デバイスの製造方法
US6228693B1 (en) 1998-06-05 2001-05-08 Sharp Laboratories Of America, Inc. Selected site, metal-induced, continuous crystallization method
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP4493751B2 (ja) * 1998-07-17 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP4493752B2 (ja) * 1998-07-17 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2000058839A (ja) 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6251788B1 (en) * 1999-05-03 2001-06-26 Winbond Electronics Corp. Method of integrated circuit polishing without dishing effects
US20100330748A1 (en) * 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US6524877B1 (en) * 1999-10-26 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of fabricating the same
JP4104800B2 (ja) * 1999-12-08 2008-06-18 三菱電機株式会社 液晶表示装置およびｔｆｔパネル
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
TW494447B (en) * 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4700160B2 (ja) * 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) * 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
GB0006958D0 (en) * 2000-03-23 2000-05-10 Koninkl Philips Electronics Nv Method of manufacturing a transistor
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
US7579203B2 (en) 2000-04-25 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4785229B2 (ja) 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7088322B2 (en) * 2000-05-12 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6875674B2 (en) * 2000-07-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorine concentration
US7030551B2 (en) * 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
JP2002200936A (ja) 2000-11-06 2002-07-16 Semiconductor Energy Lab Co Ltd 表示装置及び車両
US6954747B1 (en) * 2000-11-14 2005-10-11 Microsoft Corporation Methods for comparing versions of a program
WO2002043921A1 (fr) * 2000-12-01 2002-06-06 Toyo Boseki Kabushiki Kaisha Tampon de polissage, procede de fabrication de ce tampon de polissage, et couche d'amortissement pour ce tampon de polissage
KR100962054B1 (ko) 2000-12-05 2010-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
JP4968982B2 (ja) * 2000-12-15 2012-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW525402B (en) * 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
SG160191A1 (en) 2001-02-28 2010-04-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
JP2002280167A (ja) * 2001-03-16 2002-09-27 Pioneer Electronic Corp 有機ｅｌ表示パネル
GB0108309D0 (en) * 2001-04-03 2001-05-23 Koninkl Philips Electronics Nv Matrix array devices with flexible substrates
JP4860833B2 (ja) * 2001-04-10 2012-01-25 ゲットナー・ファンデーション・エルエルシー 薄膜トランジスタの製造方法
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW546857B (en) 2001-07-03 2003-08-11 Semiconductor Energy Lab Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
JP4323115B2 (ja) * 2001-07-06 2009-09-02 シャープ株式会社 機能性パネルの製造方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003109773A (ja) 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5202673B2 (ja) * 2001-07-27 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
JP4166455B2 (ja) 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
JP3913521B2 (ja) * 2001-10-23 2007-05-09 共同印刷株式会社 液晶表示装置用の基材、液晶表示装置の電極基材の製造方法及び液晶表示装置の製造方法
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
US6815723B2 (en) * 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
JP4021194B2 (ja) 2001-12-28 2007-12-12 シャープ株式会社 薄膜トランジスタ装置の製造方法
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2003208108A (ja) * 2002-01-10 2003-07-25 Matsushita Electric Ind Co Ltd 表示装置およびその製造方法
AU2002246316A1 (en) * 2002-04-08 2003-10-27 Council Of Scientific And Industrial Research Process for the production of neodymium-iron-boron permanent magnet alloy powder
US8900366B2 (en) 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
AU2003234794A1 (en) * 2002-05-13 2003-11-11 Jsr Corporation Composition and method for temporarily fixing solid
US7164155B2 (en) 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
AU2003234403A1 (en) * 2002-05-16 2003-12-02 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices
US7230271B2 (en) 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
CN100578573C (zh) 2002-09-20 2010-01-06 株式会社半导体能源研究所 显示器件及其制造方法
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2004040648A1 (ja) * 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
KR20040039693A (ko) * 2002-11-04 2004-05-12 비오이 하이디스 테크놀로지 주식회사 액정디스플레이의 제조방법
WO2004042780A2 (en) * 2002-11-08 2004-05-21 Koninklijke Philips Electronics N.V. Flexible semiconductor device and method of manufacturing the same
KR100925456B1 (ko) * 2002-11-12 2009-11-06 삼성전자주식회사 액정 표시 장치의 제조 방법
US7274413B1 (en) * 2002-12-06 2007-09-25 United States Of America As Represented By The Secretary Of The Navy Flexible video display apparatus and method
KR100484109B1 (ko) * 2002-12-14 2005-04-18 삼성에스디아이 주식회사 기판 제조방법, 이 기판제조방법을 이용한 유기 전계발광표시장치의 제조방법 및 유기 전계 발광 표시장치
US6881975B2 (en) 2002-12-17 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP4101643B2 (ja) * 2002-12-26 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
JP4373085B2 (ja) * 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
EP1434264A3 (en) * 2002-12-27 2017-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using the transfer technique
US20040124538A1 (en) * 2002-12-31 2004-07-01 Rafael Reif Multi-layer integrated semiconductor structure
US7064055B2 (en) * 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
WO2004061961A1 (en) * 2002-12-31 2004-07-22 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
CN100392861C (zh) * 2003-01-08 2008-06-04 株式会社半导体能源研究所 半导体器件及其制作方法
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP2004247373A (ja) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
TWI328837B (en) * 2003-02-28 2010-08-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100940114B1 (ko) 2003-03-03 2010-02-02 매그나칩 반도체 유한회사 능동 매트릭스형 액정 디스플레이의 전극 제조방법
JP4526771B2 (ja) * 2003-03-14 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7648925B2 (en) 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7510913B2 (en) 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US7592239B2 (en) 2003-04-30 2009-09-22 Industry University Cooperation Foundation-Hanyang University Flexible single-crystal film and method of manufacturing the same
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP4316960B2 (ja) * 2003-08-22 2009-08-19 株式会社半導体エネルギー研究所 装置
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
CN100477240C (zh) 2003-10-06 2009-04-08 株式会社半导体能源研究所 半导体器件以及制造该器件的方法
EP2259300B1 (en) * 2003-10-28 2020-04-08 Semiconductor Energy Laboratory Co., Ltd. Manufacture of semiconductor device
JP2005136214A (ja) 2003-10-30 2005-05-26 Nec Corp 薄膜デバイス基板の製造方法
JP4507560B2 (ja) 2003-10-30 2010-07-21 日本電気株式会社 薄膜デバイス基板の製造方法
KR20050053883A (ko) * 2003-12-03 2005-06-10 삼성전자주식회사 표시 장치용 박막 트랜지스터 표시판
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2005057658A1 (en) 2003-12-15 2005-06-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
WO2005062388A1 (en) 2003-12-19 2005-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7405665B2 (en) * 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
CN101916764A (zh) * 2004-01-23 2010-12-15 株式会社半导体能源研究所 膜状物品及其制作方法
CN100502018C (zh) * 2004-02-06 2009-06-17 株式会社半导体能源研究所 薄膜集成电路的制造方法和元件基片
TWI406690B (zh) 2004-02-26 2013-09-01 Semiconductor Energy Lab 運動器具，娛樂工具，和訓練工具
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4465715B2 (ja) * 2004-04-16 2010-05-19 セイコーエプソン株式会社 薄膜デバイス、集積回路、電気光学装置、電子機器
CN100481327C (zh) * 2004-04-28 2009-04-22 汉阳大学校产学协力团 柔性光电设备及其制造方法
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7534702B2 (en) 2004-06-29 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2006041135A (ja) * 2004-07-26 2006-02-09 Sumitomo Bakelite Co Ltd 電子デバイスおよびその製造方法
US20150287660A1 (en) 2007-01-05 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
WO2006011665A1 (en) * 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
JP4801337B2 (ja) * 2004-09-21 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8058146B2 (en) * 2004-09-24 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Peeling method
TWI372413B (en) * 2004-09-24 2012-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same, and electric appliance
JP4817636B2 (ja) * 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR20060042303A (ko) * 2004-11-09 2006-05-12 삼성전자주식회사 가요성 액정 표시 장치의 제조 방법
US7736964B2 (en) * 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
US7307006B2 (en) * 2005-02-28 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9040420B2 (en) 2005-03-01 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including peeling layers from substrates by etching
WO2006095791A1 (en) 2005-03-07 2006-09-14 Semiconductor Energy Laboratory Co., Ltd. Element substrate, inspecting method, and manufacturing method of semiconductor device
US8390537B2 (en) 2005-03-11 2013-03-05 The Invention Science Fund I, Llc Method of assembling displays on substrates
US9153163B2 (en) * 2005-03-11 2015-10-06 The Invention Science Fund I, Llc Self assembly of elements for displays
US7977130B2 (en) 2006-08-03 2011-07-12 The Invention Science Fund I, Llc Method of assembling displays on substrates
US8711063B2 (en) * 2005-03-11 2014-04-29 The Invention Science Fund I, Llc Self assembly of elements for displays
US20060202944A1 (en) * 2005-03-11 2006-09-14 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Elements for self assembling displays
US8860635B2 (en) * 2005-04-04 2014-10-14 The Invention Science Fund I, Llc Self assembling display with substrate
US8822272B2 (en) 2005-03-28 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and measuring method thereof
US7925391B2 (en) * 2005-06-02 2011-04-12 The Boeing Company Systems and methods for remote display of an enhanced image
JP2006344865A (ja) * 2005-06-10 2006-12-21 Toyoko Kagaku Co Ltd Ｓｏｉ基板及び該基板の製造方法
US20060286768A1 (en) * 2005-06-16 2006-12-21 Intel Corporation Method of supporting microelectronic wafer during backside processing
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
US20070058114A1 (en) * 2005-09-12 2007-03-15 Asahi Glass Company, Limited Light control device
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2007055299A1 (en) * 2005-11-09 2007-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101305315B (zh) * 2005-11-11 2010-05-19 株式会社半导体能源研究所 形成具有功能性的层的方法及半导体器件的制造方法
KR101319468B1 (ko) * 2005-12-02 2013-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US7785938B2 (en) * 2006-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
TWI424499B (zh) 2006-06-30 2014-01-21 Semiconductor Energy Lab 製造半導體裝置的方法
KR100759691B1 (ko) * 2006-07-04 2007-09-17 삼성에스디아이 주식회사 평판 표시 장치의 제조 방법
KR100805589B1 (ko) * 2006-07-04 2008-02-20 삼성에스디아이 주식회사 평판 표시 장치의 제조 방법
KR100804527B1 (ko) 2006-07-05 2008-02-20 삼성에스디아이 주식회사 박막 트랜지스턱 기판의 제조방법 및 이를 이용한 유기발광 디스플레이 장치의 제조방법
KR100804526B1 (ko) 2006-07-05 2008-02-20 삼성에스디아이 주식회사 유기 발광 디스플레이 장치의 제조방법
KR100795802B1 (ko) 2006-08-03 2008-01-17 삼성에스디아이 주식회사 평판 표시 장치의 제조방법
TWI430435B (zh) 2006-09-29 2014-03-11 Semiconductor Energy Lab 半導體裝置的製造方法
US8137417B2 (en) * 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US7713836B2 (en) * 2006-09-29 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device
EP2064732A4 (en) * 2006-10-19 2012-07-25 Semiconductor Energy Lab SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
KR100824881B1 (ko) 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824880B1 (ko) 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
WO2008066091A1 (en) * 2006-11-29 2008-06-05 Semiconductor Energy Laboratory Co., Ltd. Device, and method for manufacturing the same
KR100833738B1 (ko) 2006-11-30 2008-05-29 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824902B1 (ko) 2006-12-13 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP2007108785A (ja) * 2006-12-25 2007-04-26 Semiconductor Energy Lab Co Ltd 半導体装置
TWI343636B (en) * 2007-01-29 2011-06-11 Au Optronics Corp Substrate module and manufacturing method of flexible active matrix devices
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4801608B2 (ja) * 2007-03-06 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1970952A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5105918B2 (ja) * 2007-03-16 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5268395B2 (ja) 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1986238A3 (en) * 2007-04-27 2010-12-29 Semiconductor Energy Laboratory Co., Ltd. Resin molded optical semiconductor device and corresponding fabrication method
US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5459899B2 (ja) * 2007-06-01 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
JP5322408B2 (ja) * 2007-07-17 2013-10-23 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
EP2019425A1 (en) * 2007-07-27 2009-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2009042255A (ja) 2007-08-06 2009-02-26 Hitachi Displays Ltd 液晶表示装置
JP5248240B2 (ja) 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
JP5388500B2 (ja) 2007-08-30 2014-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009205669A (ja) 2008-01-31 2009-09-10 Semiconductor Energy Lab Co Ltd 半導体装置
KR101563138B1 (ko) 2008-04-25 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR101582503B1 (ko) 2008-05-12 2016-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102037556B (zh) 2008-05-23 2016-02-10 株式会社半导体能源研究所 半导体器件
WO2009142310A1 (en) 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5248412B2 (ja) 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8053253B2 (en) 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8563397B2 (en) * 2008-07-09 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2010005064A1 (en) 2008-07-10 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
TWI475282B (zh) 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
JP4659925B2 (ja) 2008-08-04 2011-03-30 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
TWI384434B (zh) * 2008-08-28 2013-02-01 Au Optronics Corp 可撓式顯示面板及其製造方法、光電裝置及其製造方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101611643B1 (ko) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP4550944B2 (ja) 2008-11-18 2010-09-22 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US8877648B2 (en) 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
JP4653860B2 (ja) 2009-03-31 2011-03-16 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
CN102460721B (zh) * 2009-06-05 2015-07-01 株式会社半导体能源研究所 光电转换装置及其制造方法
WO2010140522A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
CN102460722B (zh) * 2009-06-05 2015-04-01 株式会社半导体能源研究所 光电转换装置及其制造方法
IN2012DN01823A (ko) 2009-10-16 2015-06-05 Semiconductor Energy Lab
WO2011125455A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
WO2011142089A1 (ja) 2010-05-14 2011-11-17 パナソニック株式会社 フレキシブル半導体装置およびその製造方法ならびに画像表示装置
WO2012127779A1 (ja) 2011-03-24 2012-09-27 パナソニック株式会社 フレキシブル半導体装置及びその製造方法
TWI433625B (zh) 2011-07-04 2014-04-01 Ind Tech Res Inst 軟性電子元件的製法
KR101875132B1 (ko) * 2011-10-28 2018-07-09 삼성디스플레이 주식회사 유기 전계 발광 표시 장치 및 이의 제조 방법
JP5380561B2 (ja) * 2012-02-09 2014-01-08 株式会社半導体エネルギー研究所 半導体装置
KR101793628B1 (ko) 2012-04-08 2017-11-06 삼성전자주식회사 투명 디스플레이 장치 및 그 디스플레이 방법
US8878275B2 (en) * 2013-02-18 2014-11-04 Fairchild Semiconductor Corporation LDMOS device with double-sloped field plate
KR20150120376A (ko) 2013-02-20 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 반도체 장치, 및 박리 장치
WO2015019971A1 (en) 2013-08-06 2015-02-12 Semiconductor Energy Laboratory Co., Ltd. Peeling method
TWI777433B (zh) 2013-09-06 2022-09-11 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
JP5613814B2 (ja) * 2013-10-29 2014-10-29 株式会社半導体エネルギー研究所 携帯機器
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
US9905589B2 (en) 2013-12-03 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN105793957B (zh) 2013-12-12 2019-05-03 株式会社半导体能源研究所 剥离方法及剥离装置
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2015125046A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and peeling method
TWI679560B (zh) 2014-03-13 2019-12-11 日商半導體能源研究所股份有限公司 觸控面板
CN103996800B (zh) * 2014-03-25 2016-08-17 吉林大学 一种从底发射到顶发射转换的柔性有机电致发光器件的制备方法
KR102431018B1 (ko) 2014-04-11 2022-08-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP2014212323A (ja) * 2014-05-23 2014-11-13 株式会社半導体エネルギー研究所 半導体装置
TWI695525B (zh) 2014-07-25 2020-06-01 日商半導體能源研究所股份有限公司 剝離方法、發光裝置、模組以及電子裝置
WO2016017997A1 (en) 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Wearable glasses and method of providing content using the same
JP6012694B2 (ja) * 2014-11-24 2016-10-25 株式会社半導体エネルギー研究所 発光装置の作製方法
WO2017096628A1 (zh) * 2015-12-11 2017-06-15 深圳市柔宇科技有限公司 柔性显示模组的绑定方法
JP6329123B2 (ja) * 2015-12-18 2018-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
CN109071302B (zh) 2016-03-09 2022-04-26 康宁股份有限公司 复杂弯曲玻璃制品的冷成形
US10680155B2 (en) * 2016-05-24 2020-06-09 The Chinese University Of Hong Kong Methods of fabrication of flexible micro-thermoelectric generators
CN115570743A (zh) 2016-06-28 2023-01-06 康宁公司 将薄强化玻璃层压到用于装饰和显示器盖应用的曲面成型塑料表面
CN109416480B (zh) 2016-07-05 2022-08-12 康宁公司 冷成形玻璃制品和其组装工艺
JP6280969B2 (ja) * 2016-10-14 2018-02-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2019532902A (ja) 2016-10-20 2019-11-14 コーニング インコーポレイテッド 冷間成形三次元カバーガラス物品及びこれを製造する成形プロセス
KR102429148B1 (ko) 2016-10-25 2022-08-04 코닝 인코포레이티드 디스플레이에 냉간-성형 유리 적층
EP3562712A1 (en) 2016-12-30 2019-11-06 Corning Incorporated Glass-covered vehicle interior system and method for forming the same
EP3507092A2 (en) 2017-01-03 2019-07-10 Corning Incorporated Vehicle interior systems having a curved cover glass and a display or touch panel and methods for forming the same
US10712850B2 (en) 2017-01-03 2020-07-14 Corning Incorporated Vehicle interior systems having a curved cover glass and a display or touch panel and methods for forming the same
US11016590B2 (en) 2017-01-03 2021-05-25 Corning Incorporated Vehicle interior systems having a curved cover glass and display or touch panel and methods for forming the same
JP6378372B2 (ja) * 2017-01-17 2018-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6329292B2 (ja) * 2017-03-23 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
JP6518916B2 (ja) * 2017-03-24 2019-05-29 株式会社Ｎｓｃ 保護ヘルメット
CN110799463B (zh) 2017-05-15 2022-09-09 康宁公司 有轮廓玻璃制品和制造有轮廓玻璃制品的方法
CN117962601A (zh) 2017-07-18 2024-05-03 康宁公司 复杂弯曲玻璃制品的冷成型
US11459268B2 (en) 2017-09-12 2022-10-04 Corning Incorporated Tactile elements for deadfronted glass and methods of making the same
TW202340816A (zh) 2017-09-13 2023-10-16 美商康寧公司 用於顯示器的基於光導器的無電面板、相關的方法及載具內部系統
US11065960B2 (en) 2017-09-13 2021-07-20 Corning Incorporated Curved vehicle displays
TW201918462A (zh) 2017-10-10 2019-05-16 美商康寧公司 具有改善可靠性的彎曲的覆蓋玻璃的車輛內部系統及其形成方法
CN111758063B (zh) 2017-11-21 2022-08-09 康宁公司 用于抬头显示器系统的非球面镜及其形成方法
US11767250B2 (en) 2017-11-30 2023-09-26 Corning Incorporated Systems and methods for vacuum-forming aspheric mirrors
JP7274480B2 (ja) 2017-11-30 2023-05-16 コーニング インコーポレイテッド 曲面ミラーを成形する真空成形装置、システム及び方法
WO2019177952A1 (en) 2018-03-13 2019-09-19 Corning Incorporated Vehicle interior systems having a crack resistant curved cover glass and methods for forming the same
JP2018142721A (ja) * 2018-04-27 2018-09-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112566782A (zh) 2018-07-16 2021-03-26 康宁公司 具冷弯玻璃基板的车辆内部系统及其形成方法
EP3826974A1 (en) 2018-07-23 2021-06-02 Corning Incorporated Automotive interiors and cover glass articles with improved headform impact performance and post-breakage visibility
EP4269179A2 (en) 2018-10-18 2023-11-01 Corning Incorporated Strengthened glass articles exhibiting improved headform impact performance and automotive interior systems incorporating the same
CN113195421B (zh) 2018-11-21 2023-04-07 康宁公司 低存储拉伸能切割玻璃和优先裂纹碎裂
US11423816B2 (en) 2018-11-29 2022-08-23 Corning Incorporated Dynamically adjustable display system and methods of dynamically adjusting a display
JP2022509987A (ja) 2018-11-30 2022-01-25 コーニング インコーポレイテッド 熱的に整合した系を有する冷間成形されたガラス物品および同ガラス物品を形成するための方法
EP3771695A1 (en) 2019-07-31 2021-02-03 Corning Incorporated Method and system for cold-forming glass
US11772361B2 (en) 2020-04-02 2023-10-03 Corning Incorporated Curved glass constructions and methods for forming same
JP2022049603A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置の製造方法
CN112382666B (zh) * 2020-11-05 2022-09-02 中国科学院上海微系统与信息技术研究所 一种柔性器件及其制备方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US575745A (en) * 1897-01-26 Machine for boring wheel-rims
US3877790A (en) 1972-09-18 1975-04-15 Astronics Corp Large liquid crystal displays and method of producing them
US4409268A (en) 1979-03-19 1983-10-11 Ricoh Company, Ltd. Liquid crystal display panels and process for their production
US4310577A (en) 1979-08-24 1982-01-12 Liquid Crystal Products, Inc. Liquid crystal film laminate
JPH0658966B2 (ja) 1982-05-17 1994-08-03 キヤノン株式会社 半導体素子
US4709991A (en) 1983-04-26 1987-12-01 Seiko Epson Kabushiki Kaisha Liquid crystal display with barrier layer to reduce permeability
JPS60238817A (ja) 1984-05-12 1985-11-27 Citizen Watch Co Ltd 液晶表示装置
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US5962869A (en) 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
AU588084B2 (en) 1986-01-27 1989-09-07 Autodisplay A/S Flexible lcd
JPS63101829A (ja) * 1986-10-17 1988-05-06 Nec Corp アクテイブ・マトリツクス液晶表示装置およびその製造方法
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
EP0360971A3 (en) 1988-08-31 1991-07-17 Mitsui Mining & Smelting Co., Ltd. Mounting substrate and its production method, and printed wiring board having connector function and its connection method
JPH02154232A (ja) * 1988-12-06 1990-06-13 Nec Corp 液晶表示基板とその製造方法
US4961630A (en) 1989-03-15 1990-10-09 Ovonic Imaging Systems, Inc. Liquid crystal display with auxiliary pixel capacitance interconnected through substrate
US5058997A (en) 1989-08-11 1991-10-22 International Business Machines Corporation Tft lcd with optical interference color filters
US4988976A (en) 1989-09-06 1991-01-29 Lu Hsing Tseng Head-up display with magnetic field speed detecting means
JPH03125443A (ja) 1989-10-09 1991-05-28 Sharp Corp 実装基板の電極及び該実装基板の電極を有する液晶表示装置
US5453864A (en) 1990-02-16 1995-09-26 Seiko Epson Corporation Liquid crystal element and electronic apparatus
JP2660601B2 (ja) 1990-06-27 1997-10-08 日本石油株式会社 液晶表示素子用補償板の製造法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JPH0824193B2 (ja) 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JP2929704B2 (ja) 1990-11-01 1999-08-03 松下電器産業株式会社 液晶表示用基板の製造方法
JP2866730B2 (ja) 1990-11-14 1999-03-08 日本電信電話株式会社 半導体回路の形成方法
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
JP3119709B2 (ja) 1990-12-20 2000-12-25 旭硝子株式会社 液晶表示装置及び投射型液晶表示装置
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5256562A (en) 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5475514A (en) 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US7075501B1 (en) 1990-12-31 2006-07-11 Kopin Corporation Head mounted display system
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5258325A (en) 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5261156A (en) 1991-02-28 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
JPH0824104B2 (ja) 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
US5110748A (en) 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display
US5308779A (en) 1991-03-28 1994-05-03 Honeywell Inc. Method of making high mobility integrated drivers for active matrix displays
KR940000143B1 (ko) 1991-06-25 1994-01-07 재단법인 한국전자통신연구소 대형 박막 트랜지스터(TFT) 액정 디스플레이 패널(LCD panel)의 제조방법
DE69226687T2 (de) 1991-10-16 1999-04-15 Sony Corp Verfahren zur Herstellung einer SOI-Struktur mit einem DRAM
JPH06118441A (ja) 1991-11-05 1994-04-28 Tadanobu Kato 表示セル
US5317433A (en) 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
EP0909972A3 (en) 1992-03-13 1999-06-09 Kopin Corporation Method of forming a high resolution liquid crystal display device
JP2821830B2 (ja) 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
JPH05323365A (ja) 1992-05-19 1993-12-07 Casio Comput Co Ltd アクティブマトリックス液晶表示装置
JP3526058B2 (ja) 1992-08-19 2004-05-10 セイコーインスツルメンツ株式会社 光弁用半導体装置
DE69322279T2 (de) 1992-09-11 1999-06-24 Kopin Corp Farbfiltersystem fuer anzeigetafeln
US5705424A (en) 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
US5346850A (en) 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
US5781164A (en) 1992-11-04 1998-07-14 Kopin Corporation Matrix display systems
JP3200481B2 (ja) 1992-11-18 2001-08-20 ナミックス株式会社 液晶表示パネル用シール材及びそれを用いた液晶表示パネル
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6022458A (en) 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
JPH06244103A (ja) 1993-02-15 1994-09-02 Semiconductor Energy Lab Co Ltd 半導体の製造方法
EP0612102B1 (en) 1993-02-15 2001-09-26 Semiconductor Energy Laboratory Co., Ltd. Process for the fabrication of a crystallised semiconductor layer
JP3431682B2 (ja) 1993-03-12 2003-07-28 株式会社半導体エネルギー研究所 半導体回路の作製方法
TW241377B (ko) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US5576868A (en) 1993-04-09 1996-11-19 Citizen Watch Co., Ltd. Liquid crystal display having IC driving circuits formed on first and second substrates
JP3184853B2 (ja) 1993-06-24 2001-07-09 株式会社日立製作所 液晶表示装置
TW369686B (en) * 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
US5436744A (en) 1993-09-03 1995-07-25 Motorola Inc. Flexible liquid crystal display with integrated driver circuit and display electrodes formed on opposite sides of folded substrate
JPH07142743A (ja) 1993-09-22 1995-06-02 Sharp Corp 薄膜トランジスタの製造方法
US5488012A (en) * 1993-10-18 1996-01-30 The Regents Of The University Of California Silicon on insulator with active buried regions
GB9401770D0 (en) 1994-01-31 1994-03-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuits
US5454302A (en) 1994-03-02 1995-10-03 Atlas Pacific Engineering Company Pear transfer apparatus and method
JP3246210B2 (ja) * 1994-08-11 2002-01-15 株式会社神戸製鋼所 高強度高靭性溶融めっき鋼線およびその製造方法
TW403993B (en) 1994-08-29 2000-09-01 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
JP4083821B2 (ja) 1994-09-15 2008-04-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3512496B2 (ja) 1994-11-25 2004-03-29 株式会社半導体エネルギー研究所 Ｓｏｉ型半導体集積回路の作製方法
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
JP3499327B2 (ja) 1995-03-27 2004-02-23 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101319468B1 (ko) * 2005-12-02 2013-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP2010197813A (ja) * 2009-02-26 2010-09-09 Hitachi Displays Ltd 画像表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100500033B1 (ko) * 1996-10-15 2005-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치

Also Published As

Publication number Publication date
KR100302403B1 (ko) 2001-11-07
JP3934310B2 (ja) 2007-06-20
KR100376801B1 (ko) 2003-03-19
JP3934629B2 (ja) 2007-06-20
JP3364081B2 (ja) 2003-01-08
JP2004297084A (ja) 2004-10-21
KR100427906B1 (ko) 2004-04-30
US5821138A (en) 1998-10-13
US6998282B1 (en) 2006-02-14
JP2001044445A (ja) 2001-02-16
US7375782B2 (en) 2008-05-20
US20080309585A1 (en) 2008-12-18
JPH08288522A (ja) 1996-11-01
KR100288111B1 (ko) 2001-06-01
US8497509B2 (en) 2013-07-30
KR100432589B1 (ko) 2004-05-28
US20050162578A1 (en) 2005-07-28
JP2001060697A (ja) 2001-03-06
JP3369539B2 (ja) 2003-01-20
JP3364197B2 (ja) 2003-01-08
US20050162421A1 (en) 2005-07-28
US7425931B1 (en) 2008-09-16
JP2001053290A (ja) 2001-02-23
US7361519B2 (en) 2008-04-22
JP2005051207A (ja) 2005-02-24
US6376333B1 (en) 2002-04-23
JP3934628B2 (ja) 2007-06-20

Similar Documents

Publication Publication Date Title
KR960032775A (ko) 반도체 장치 제조 방법
KR100581626B1 (ko) 플라스틱 기판에 반도체 박막을 형성하는 방법 및 플라스틱기판
KR100570541B1 (ko) 반도체막제조방법및반도체장치제조방법
KR970063787A (ko) 반도체 박막과 이의 제조 방법 및 반도체 장치와 이를 제조하는 방법
US5603779A (en) Bonded wafer and method of fabrication thereof
KR970063763A (ko) 반도체 박막, 반도체 장치 및 이의 제조 방법
KR970060391A (ko) 반도체장치 및 그 제작방법
KR960009232A (ko) 전기광학 디바이스용 반도체 회로 및 그 제조방법
JPH08125195A (ja) 薄膜半導体装置の作製方法
KR940022915A (ko) 트랜지스터 및 그 제조방법
KR940016544A (ko) 반도체기판의 작성방법 및 고체촬상장치의 제조방법
KR890015378A (ko) 다결정 실리콘층 에칭방법
KR100455594B1 (ko) 반도체 장치 제조 방법
JPH10335452A (ja) コンタクトホールの形成方法
KR900010941A (ko) 반도체 장치의 제조방법
JP3431653B2 (ja) Ｍｉｓ型半導体装置の作製方法
JP2000124457A (ja) 多結晶シリコン薄膜の平坦化方法
JP3279280B2 (ja) 薄膜半導体素子の製造方法
JP4317332B2 (ja) アクティブマトリクス型表示装置用基板の製造方法
JPH10189605A (ja) タングステン領域に形成された窒化タングステン側壁を有する半導体素子およびその構成方法
JP2000077401A (ja) 半導体膜の形成方法
JP2001185541A5 (ja) 金属配線の形成方法
JPH10303427A (ja) 半導体装置の作製方法及び半導体装置用基板の作製方法
JP3300781B2 (ja) 酸化膜の形成方法
JP3432013B2 (ja) 酸化膜の形成方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
A107 Divisional application of patent
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20140103

Year of fee payment: 14

FPAY Annual fee payment

Payment date: 20141230

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20160104

Year of fee payment: 16

EXPY Expiration of term