JP6290389B2 - 波長変換層を有するledディスプレイ - Google Patents
波長変換層を有するledディスプレイ Download PDFInfo
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- JP6290389B2 JP6290389B2 JP2016521438A JP2016521438A JP6290389B2 JP 6290389 B2 JP6290389 B2 JP 6290389B2 JP 2016521438 A JP2016521438 A JP 2016521438A JP 2016521438 A JP2016521438 A JP 2016521438A JP 6290389 B2 JP6290389 B2 JP 6290389B2
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- micro led
- layer
- wavelength conversion
- led device
- light
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Description
Claims (20)
- ディスプレイパネルであって、
ピクセルのアレイを含み、各ピクセルが、複数のサブピクセルを含み、前記サブピクセルのそれぞれが、異なる色の発光スペクトル用に設計されている、ディスプレイ基板と、
マイクロLEDデバイスの対のアレイであって、各サブピクセルの内部に、一対のマイクロLEDデバイスが実装される、マイクロLEDデバイスの対のアレイと、
前記マイクロLEDデバイスの対のアレイの上の、蛍光体粒子を含む波長変換層のアレイと、
を備え、
各マイクロLEDデバイスは、個別のサブピクセルの中で、はんだ材料を含む個別の接合層と別々に取り付けられており、各マイクロLEDデバイスは1μm−100μmの最大幅を有する、ことを特徴とする、ディスプレイパネル。 - 前記波長変換層のアレイが、複数の波長変換層のグループを含み、各グループが、異なる色の発光スペクトルを放出するように設計され、前記異なる波長変換層のグループが、異なるサブピクセル内に分けられることを特徴とする、請求項1に記載のディスプレイパネル。
- 前記サブピクセルのうちの1つに関するマイクロLEDデバイスの対の上には、波長変換層が形成されないことを特徴とする、請求項2に記載のディスプレイパネル。
- 前記マイクロLEDデバイスの対のアレイが、単色の発光スペクトルを放出するように設計されることを特徴とする、請求項2に記載のディスプレイパネル。
- 前記マイクロLEDデバイスの対のアレイが、マイクロLEDデバイスの対のグループを含み、各グループが、異なる色の発光スペクトルを放出するように設計され、前記異なるマイクロLEDデバイスの対のグループが、異なるサブピクセル内に分けられることを特徴とする、請求項1に記載のディスプレイパネル。
- 第1のサブピクセル内の第1のマイクロLEDデバイスの対のグループの上に、波長変換層が形成され、第2のサブピクセル内の第2のマイクロLEDデバイスの対のグループの上に、波長変換層が形成されないことを特徴とする、請求項5に記載のディスプレイパネル。
- 各波長変換層が、単一のマイクロLEDデバイスの上にのみ形成されることを特徴とする、請求項1に記載のディスプレイパネル。
- 各波長変換層が、マイクロLEDデバイスの対の上に形成されることを特徴とする、請求項1に記載のディスプレイパネル。
- 前記波長変換層が、ドーム形状であることを特徴とする、請求項1に記載のディスプレイパネル。
- 前記波長変換層が、半球状の外表面及び細長ドーム形状からなる群から選択される形状を有することを特徴とする、請求項9に記載のディスプレイパネル。
- 前記波長変換層のアレイと、対応するマイクロLEDデバイスの対との間に、配光層のアレイを更に備えることを特徴とする、請求項1に記載のディスプレイパネル。
- 前記配光層がライトパイプであり、各配光層が、前記配光層の厚さよりも大きい、横方向の長さで特徴付けられることを特徴とする、請求項11に記載のディスプレイパネル。
- 前記蛍光体粒子が、量子ドットであるか、又は、前記蛍光体粒子が、その組成に起因するルミネセンスを呈し、量子ドットとは見なされないことを特徴とする、請求項1に記載のディスプレイパネル。
- 各マイクロLEDデバイスが、上部接点及び底部接点を含む垂直型LEDデバイスであり、前記底部接点が対応する接合層と電気的に接続していることを特徴とする、請求項1に記載のディスプレイパネル。
- 各サブピクセルに対応する反射バンク層を更に備え、各反射バンク層が、前記ディスプレイ基板内部の作動回路機構から、個別にアドレス可能であることを特徴とする、請求項1に記載のディスプレイパネル。
- 前記ディスプレイ基板上、又は前記ディスプレイ基板内部の、接地線と、
前記接地線に、前記マイクロLEDデバイスの対のアレイの上部接点を電気的に接続する、1つの上部電極層と、
を更に備えていることを特徴とする、請求項1に記載のディスプレイパネル。 - さらに、前記ディスプレイ基板上、又は前記ディスプレイ基板内部の、接地線と、
前記接地線に、マイクロLEDデバイスの対のうちの第1のマイクロLEDデバイスの第1の上部接点を電気的に接続する、第1の上部電極層と、前記接地線に、前記マイクロLEDデバイスの対のうちの第2のマイクロLEDデバイスの第2の上部接点を接続する、別個の上部電極層とを含むことを特徴とする、請求項1に記載のディスプレイパネル。 - ライトパイプの形態の各配光層が、2つ以上のサブピクセル、及び前記2つ以上のサブピクセル内部に実装された前記マイクロLEDデバイスの対の上にわたることを特徴とする、請求項12に記載のディスプレイパネル。
- ライトパイプの形態の各配光層が、対応するピクセル内部の前記複数のサブピクセルの全て、及び前記ピクセルの前記複数のサブピクセルの内部に実装された前記マイクロLEDデバイスの対の上にわたることを特徴とする、請求項12に記載のディスプレイパネル。
- ライトパイプの形態の各配光層が、1つ以下のサブピクセル、及び前記サブピクセルの内部に実装された前記マイクロLEDデバイスの対の上にわたることを特徴とする、請求項12に記載のディスプレイパネル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US13/920,912 US9111464B2 (en) | 2013-06-18 | 2013-06-18 | LED display with wavelength conversion layer |
US13/920,912 | 2013-06-18 | ||
PCT/US2014/041487 WO2014204694A1 (en) | 2013-06-18 | 2014-06-09 | Led display with wavelength conversion layer |
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JP2016523450A JP2016523450A (ja) | 2016-08-08 |
JP6290389B2 true JP6290389B2 (ja) | 2018-03-07 |
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US (3) | US9111464B2 (ja) |
EP (1) | EP2997564B1 (ja) |
JP (1) | JP6290389B2 (ja) |
KR (1) | KR101704334B1 (ja) |
CN (1) | CN105339996B (ja) |
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Families Citing this family (429)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MX337295B (es) | 2009-02-09 | 2016-02-23 | Semprius Inc | Modulos, receptores y sub-receptores fotovoltaicos tipo concentrador y metodos para formar los mismos. |
WO2010111601A2 (en) | 2009-03-26 | 2010-09-30 | Semprius, Inc. | Methods of forming printable integrated circuit devices and devices formed thereby |
US9161448B2 (en) | 2010-03-29 | 2015-10-13 | Semprius, Inc. | Laser assisted transfer welding process |
WO2012027458A1 (en) | 2010-08-26 | 2012-03-01 | Semprius, Inc. | Structures and methods for testing printable integrated circuits |
US9899329B2 (en) | 2010-11-23 | 2018-02-20 | X-Celeprint Limited | Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance |
US8939604B2 (en) | 2011-03-25 | 2015-01-27 | Arkalumen Inc. | Modular LED strip lighting apparatus |
US8889485B2 (en) | 2011-06-08 | 2014-11-18 | Semprius, Inc. | Methods for surface attachment of flipped active componenets |
US9412727B2 (en) | 2011-09-20 | 2016-08-09 | Semprius, Inc. | Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion |
US9565782B2 (en) | 2013-02-15 | 2017-02-07 | Ecosense Lighting Inc. | Field replaceable power supply cartridge |
KR102049635B1 (ko) | 2013-06-12 | 2019-11-28 | 로히니, 엘엘씨. | 피착된 광-생성 소스에 의한 키보드 백라이팅 |
US8987765B2 (en) * | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
KR20150005113A (ko) * | 2013-07-04 | 2015-01-14 | 에스케이하이닉스 주식회사 | 광학 신호 경로를 포함하는 반도체 패키지 |
KR20150025231A (ko) * | 2013-08-28 | 2015-03-10 | 서울반도체 주식회사 | 광원 모듈 및 그 제조 방법, 및 백라이트 유닛 |
KR102067420B1 (ko) * | 2013-08-30 | 2020-01-17 | 엘지디스플레이 주식회사 | 발광다이오드어셈블리 및 그를 포함한 액정표시장치 |
CN105794322B (zh) * | 2013-12-06 | 2018-04-17 | 夏普株式会社 | 发光体基板、及其制造方法 |
KR102122359B1 (ko) * | 2013-12-10 | 2020-06-12 | 삼성전자주식회사 | 발광장치 제조방법 |
WO2015092140A1 (en) * | 2013-12-18 | 2015-06-25 | Flexbright Oy | Illuminating film structure |
WO2015138495A1 (en) * | 2014-03-11 | 2015-09-17 | Osram Sylvania Inc. | Light converter assemblies with enhanced heat dissipation |
KR20150125120A (ko) * | 2014-04-29 | 2015-11-09 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
DE102014106074A1 (de) * | 2014-04-30 | 2015-11-19 | Osram Opto Semiconductors Gmbh | Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung |
CN103972222A (zh) * | 2014-06-03 | 2014-08-06 | 宁波升谱光电半导体有限公司 | Led光源封装方法、led光源封装结构及光源模块 |
US9929053B2 (en) | 2014-06-18 | 2018-03-27 | X-Celeprint Limited | Systems and methods for controlling release of transferable semiconductor structures |
US9865600B2 (en) | 2014-06-18 | 2018-01-09 | X-Celeprint Limited | Printed capacitors |
WO2015193433A2 (en) | 2014-06-18 | 2015-12-23 | X-Celeprint Limited | Micro assembled high frequency devices and arrays |
US9437782B2 (en) | 2014-06-18 | 2016-09-06 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
EP3157858B1 (en) | 2014-06-18 | 2018-12-26 | X-Celeprint Limited | Systems and methods for controlling release of transferable semiconductor structures |
TWI639248B (zh) | 2014-06-18 | 2018-10-21 | 愛爾蘭商艾克斯瑟樂普林特有限公司 | 用於準備氮化鎵及用於微組裝之相關材料之系統及方法 |
EP3170197B1 (en) | 2014-07-20 | 2021-09-01 | X Display Company Technology Limited | Apparatus and methods for micro-transfer printing |
DE102014110719A1 (de) * | 2014-07-29 | 2016-02-04 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Beleuchtungsvorrichtung und Verfahren zur Herstellung eines Halbleiterbauelements |
WO2016030422A1 (en) | 2014-08-26 | 2016-03-03 | X-Celeprint Limited | Micro assembled hybrid displays and lighting elements |
USD774006S1 (en) * | 2014-08-27 | 2016-12-13 | Mitsubishi Electric Corporation | Light source module |
US9818725B2 (en) | 2015-06-01 | 2017-11-14 | X-Celeprint Limited | Inorganic-light-emitter display with integrated black matrix |
US9991163B2 (en) | 2014-09-25 | 2018-06-05 | X-Celeprint Limited | Small-aperture-ratio display with electrical component |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
US9468050B1 (en) | 2014-09-25 | 2016-10-11 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
US9537069B1 (en) | 2014-09-25 | 2017-01-03 | X-Celeprint Limited | Inorganic light-emitting diode with encapsulating reflector |
US9799261B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Self-compensating circuit for faulty display pixels |
JP6484982B2 (ja) | 2014-09-30 | 2019-03-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6339053B2 (ja) * | 2014-09-30 | 2018-06-06 | 富士フイルム株式会社 | 波長変換部材及びそれを備えたバックライトユニット、液晶表示装置 |
GB201418810D0 (en) | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
GB201418772D0 (en) * | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
US10319878B2 (en) * | 2014-10-31 | 2019-06-11 | eLux, Inc. | Stratified quantum dot phosphor structure |
US10418527B2 (en) * | 2014-10-31 | 2019-09-17 | eLux, Inc. | System and method for the fluidic assembly of emissive displays |
KR102234929B1 (ko) * | 2014-11-17 | 2021-04-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US10134803B2 (en) * | 2015-01-23 | 2018-11-20 | Vuereal Inc. | Micro device integration into system substrate |
US10847571B2 (en) * | 2015-01-23 | 2020-11-24 | Vuereal Inc. | Micro device integration into system substrate |
WO2017149521A1 (en) * | 2016-03-04 | 2017-09-08 | Vuereal Inc. | Micro device integration into system substrate |
DE112016000447T5 (de) | 2015-01-23 | 2017-11-16 | Gholamreza Chaji | Selektiver Mikrovorrichtungstransfer zu einem Empfängersubstrat |
US10700120B2 (en) | 2015-01-23 | 2020-06-30 | Vuereal Inc. | Micro device integration into system substrate |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
US9651227B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Low-profile lighting system having pivotable lighting enclosure |
US9746159B1 (en) | 2015-03-03 | 2017-08-29 | Ecosense Lighting Inc. | Lighting system having a sealing system |
US9651216B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting systems including asymmetric lens modules for selectable light distribution |
US9568665B2 (en) | 2015-03-03 | 2017-02-14 | Ecosense Lighting Inc. | Lighting systems including lens modules for selectable light distribution |
KR102346157B1 (ko) * | 2015-03-23 | 2021-12-31 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
EP3284114A1 (en) * | 2015-04-16 | 2018-02-21 | Oculus VR, LLC | Colour converting structure for led arrays |
WO2016176266A1 (en) | 2015-04-27 | 2016-11-03 | B/E Aerospace, Inc. | Flexible led lighting element |
US10568180B2 (en) | 2015-05-05 | 2020-02-18 | Arkalumen Inc. | Method and apparatus for controlling a lighting module having a plurality of LED groups |
US9640715B2 (en) | 2015-05-15 | 2017-05-02 | X-Celeprint Limited | Printable inorganic semiconductor structures |
US20160341397A1 (en) * | 2015-05-20 | 2016-11-24 | Weiwen Zhao | Insulator-coated quantum dots for use in led lighting and display devices |
JP6506392B2 (ja) * | 2015-05-29 | 2019-04-24 | 富士フイルム株式会社 | 波長変換部材及びそれを備えたバックライトユニット、液晶表示装置 |
US10102794B2 (en) | 2015-06-09 | 2018-10-16 | X-Celeprint Limited | Distributed charge-pump power-supply system |
US9871345B2 (en) | 2015-06-09 | 2018-01-16 | X-Celeprint Limited | Crystalline color-conversion device |
TWI665800B (zh) * | 2015-06-16 | 2019-07-11 | 友達光電股份有限公司 | 發光二極體顯示器及其製造方法 |
US10133426B2 (en) | 2015-06-18 | 2018-11-20 | X-Celeprint Limited | Display with micro-LED front light |
US11061276B2 (en) | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
USD785218S1 (en) | 2015-07-06 | 2017-04-25 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US10297581B2 (en) | 2015-07-07 | 2019-05-21 | Apple Inc. | Quantum dot integration schemes |
EP3321718A4 (en) | 2015-07-10 | 2019-01-16 | Dexerials Corporation | PHOSPHORI LAYER, WHITE LIGHT SOURCE DEVICE WITH THIS PHOSPHOROUS LAYER AND DISPLAY DEVICE WITH THIS WHITE LIGHT SOURCE APPARATUS |
US9704821B2 (en) | 2015-08-11 | 2017-07-11 | X-Celeprint Limited | Stamp with structured posts |
USD782093S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
USD782094S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US10255834B2 (en) | 2015-07-23 | 2019-04-09 | X-Celeprint Limited | Parallel redundant chiplet system for controlling display pixels |
US9651232B1 (en) | 2015-08-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting system having a mounting device |
CN105096749B (zh) * | 2015-08-04 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种显示装置及其制备方法 |
US9640108B2 (en) | 2015-08-25 | 2017-05-02 | X-Celeprint Limited | Bit-plane pulse width modulated digital display system |
US10468363B2 (en) | 2015-08-10 | 2019-11-05 | X-Celeprint Limited | Chiplets with connection posts |
WO2017028206A1 (en) * | 2015-08-18 | 2017-02-23 | Goertek.Inc | Repairing method, manufacturing method, device and electronic apparatus of micro-led |
US10380930B2 (en) | 2015-08-24 | 2019-08-13 | X-Celeprint Limited | Heterogeneous light emitter display system |
KR102465382B1 (ko) * | 2015-08-31 | 2022-11-10 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
KR102467420B1 (ko) * | 2015-08-31 | 2022-11-16 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
GB2549734B (en) | 2016-04-26 | 2020-01-01 | Facebook Tech Llc | A display |
GB2541970B (en) | 2015-09-02 | 2020-08-19 | Facebook Tech Llc | Display manufacture |
US10177127B2 (en) | 2015-09-04 | 2019-01-08 | Hong Kong Beida Jade Bird Display Limited | Semiconductor apparatus and method of manufacturing the same |
US10304811B2 (en) | 2015-09-04 | 2019-05-28 | Hong Kong Beida Jade Bird Display Limited | Light-emitting diode display panel with micro lens array |
US10032757B2 (en) | 2015-09-04 | 2018-07-24 | Hong Kong Beida Jade Bird Display Limited | Projection display system |
CN111261639A (zh) * | 2015-09-11 | 2020-06-09 | 夏普株式会社 | 图像显示装置以及图像显示元件的制造方法 |
US10230048B2 (en) | 2015-09-29 | 2019-03-12 | X-Celeprint Limited | OLEDs for micro transfer printing |
US10418501B2 (en) | 2015-10-02 | 2019-09-17 | X-Celeprint Limited | Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications |
GB2544335A (en) * | 2015-11-13 | 2017-05-17 | Oculus Vr Llc | A method and apparatus for use in the manufacture of a display element |
KR20170059068A (ko) | 2015-11-19 | 2017-05-30 | 삼성전자주식회사 | 광원 모듈, 디스플레이 패널 및 이를 구비한 디스플레이 장치 |
CN108475712B (zh) * | 2015-12-01 | 2021-11-09 | 夏普株式会社 | 图像形成元件 |
KR102546307B1 (ko) | 2015-12-02 | 2023-06-21 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
TWI563490B (en) | 2015-12-04 | 2016-12-21 | Ind Tech Res Inst | Display pixel and display panel |
US10066819B2 (en) | 2015-12-09 | 2018-09-04 | X-Celeprint Limited | Micro-light-emitting diode backlight system |
TWI657563B (zh) * | 2015-12-15 | 2019-04-21 | 優顯科技股份有限公司 | 光電裝置及其製造方法 |
US10091446B2 (en) | 2015-12-23 | 2018-10-02 | X-Celeprint Limited | Active-matrix displays with common pixel control |
US9930277B2 (en) | 2015-12-23 | 2018-03-27 | X-Celeprint Limited | Serial row-select matrix-addressed system |
US9786646B2 (en) | 2015-12-23 | 2017-10-10 | X-Celeprint Limited | Matrix addressed device repair |
US9928771B2 (en) | 2015-12-24 | 2018-03-27 | X-Celeprint Limited | Distributed pulse width modulation control |
KR102444177B1 (ko) * | 2015-12-28 | 2022-09-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
WO2017117151A1 (en) * | 2015-12-29 | 2017-07-06 | Light Share, LLC | Optoelectronic semiconductor devices with enhanced light output |
TWI557701B (zh) * | 2015-12-30 | 2016-11-11 | 友達光電股份有限公司 | 應用於製作發光元件陣列顯示器的印刷板模及發光元件陣列顯示器 |
WO2017123658A1 (en) * | 2016-01-12 | 2017-07-20 | Sxaymiq Technologies Llc | Light emitting diode display |
JP6959697B2 (ja) | 2016-01-15 | 2021-11-05 | ロヒンニ リミテッド ライアビリティ カンパニー | 装置上のカバーを介してバックライトで照らす装置及び方法 |
US10197226B2 (en) | 2016-01-28 | 2019-02-05 | Ecosense Lighting Inc | Illuminating with a multizone mixing cup |
US11047534B2 (en) * | 2016-01-28 | 2021-06-29 | EcoSense Lighting, Inc. | Multizone mixing cup illumination system |
US10555397B2 (en) | 2016-01-28 | 2020-02-04 | Ecosense Lighting Inc. | Systems and methods for providing tunable warm white light |
WO2017131699A1 (en) | 2016-01-28 | 2017-08-03 | Ecosense Lighting Inc | Systems for providing tunable white light with high color rendering |
US11047535B2 (en) * | 2016-01-28 | 2021-06-29 | Ecosense Lighting Inc. | Illuminating with a multizone mixing cup |
WO2017131721A1 (en) * | 2016-01-28 | 2017-08-03 | Ecosense Lighting Inc | Illuminating with a multizone mixing cup |
TWI780041B (zh) * | 2016-02-04 | 2022-10-11 | 晶元光電股份有限公司 | 一種發光元件及其製造方法 |
US11230471B2 (en) | 2016-02-05 | 2022-01-25 | X-Celeprint Limited | Micro-transfer-printed compound sensor device |
US10200013B2 (en) | 2016-02-18 | 2019-02-05 | X-Celeprint Limited | Micro-transfer-printed acoustic wave filter device |
US10361677B2 (en) | 2016-02-18 | 2019-07-23 | X-Celeprint Limited | Transverse bulk acoustic wave filter |
US10109753B2 (en) * | 2016-02-19 | 2018-10-23 | X-Celeprint Limited | Compound micro-transfer-printed optical filter device |
EP3420582A1 (en) | 2016-02-25 | 2019-01-02 | X-Celeprint Limited | Efficiently micro-transfer printing micro-scale devices onto large-format substrates |
WO2017146477A1 (ko) | 2016-02-26 | 2017-08-31 | 서울반도체주식회사 | 디스플레이 장치 및 그의 제조 방법 |
KR101845907B1 (ko) | 2016-02-26 | 2018-04-06 | 피에스아이 주식회사 | 초소형 led 모듈을 포함하는 디스플레이 장치 |
US10150325B2 (en) | 2016-02-29 | 2018-12-11 | X-Celeprint Limited | Hybrid banknote with electronic indicia |
US10150326B2 (en) | 2016-02-29 | 2018-12-11 | X-Celeprint Limited | Hybrid document with variable state |
US10193025B2 (en) | 2016-02-29 | 2019-01-29 | X-Celeprint Limited | Inorganic LED pixel structure |
US10153256B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-transfer printable electronic component |
US10153257B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-printed display |
EP3427307A4 (en) | 2016-03-08 | 2020-01-01 | Lilibrand LLC | LIGHTING SYSTEM COMPRISING A LENS ASSEMBLY |
KR102528300B1 (ko) * | 2016-03-10 | 2023-05-04 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
US10917953B2 (en) | 2016-03-21 | 2021-02-09 | X Display Company Technology Limited | Electrically parallel fused LEDs |
CN114725272A (zh) * | 2016-03-24 | 2022-07-08 | 索尼公司 | 显示装置、发光装置以及照明装置 |
US10163404B2 (en) * | 2016-03-31 | 2018-12-25 | Cae Inc. | Image generator for suppressing a gap between two adjacent reflective surfaces |
US10103069B2 (en) | 2016-04-01 | 2018-10-16 | X-Celeprint Limited | Pressure-activated electrical interconnection by micro-transfer printing |
US10199546B2 (en) | 2016-04-05 | 2019-02-05 | X-Celeprint Limited | Color-filter device |
US10008483B2 (en) | 2016-04-05 | 2018-06-26 | X-Celeprint Limited | Micro-transfer printed LED and color filter structure |
TWI735562B (zh) * | 2016-04-08 | 2021-08-11 | 新加坡商新加坡恒立私人有限公司 | 具有孔徑之薄光電模組及其製造 |
KR102631260B1 (ko) * | 2016-04-08 | 2024-01-31 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치 제조방법 |
US9997102B2 (en) | 2016-04-19 | 2018-06-12 | X-Celeprint Limited | Wirelessly powered display and system |
US10198890B2 (en) | 2016-04-19 | 2019-02-05 | X-Celeprint Limited | Hybrid banknote with electronic indicia using near-field-communications |
KR20180128464A (ko) * | 2016-04-22 | 2018-12-03 | 글로 에이비 | 소형 피치 직시형 디스플레이 및 이의 제조 방법 |
US10360846B2 (en) | 2016-05-10 | 2019-07-23 | X-Celeprint Limited | Distributed pulse-width modulation system with multi-bit digital storage and output device |
US10134802B2 (en) * | 2016-05-12 | 2018-11-20 | Ostendo Technologies, Inc. | Nanophosphors-converted quantum photonic imagers and methods for making the same |
US10630056B2 (en) * | 2016-05-12 | 2020-04-21 | Ostendo Technologies, Inc. | Nanophosphors-converted quantum photonic imager for efficient emission of white light in a micro-pixel array and methods for making the same |
DE102017110605A1 (de) | 2016-05-17 | 2017-11-23 | Osram Opto Semiconductors Gmbh | Optoelektronische Leuchtvorrichtung, Videowand-Modul und Signalgeber für eine Lichtsignalanlage |
US10622700B2 (en) | 2016-05-18 | 2020-04-14 | X-Celeprint Limited | Antenna with micro-transfer-printed circuit element |
CN107403819B (zh) * | 2016-05-20 | 2020-06-16 | 群创光电股份有限公司 | 显示设备 |
US9997501B2 (en) | 2016-06-01 | 2018-06-12 | X-Celeprint Limited | Micro-transfer-printed light-emitting diode device |
US10453826B2 (en) | 2016-06-03 | 2019-10-22 | X-Celeprint Limited | Voltage-balanced serial iLED pixel and display |
US11137641B2 (en) | 2016-06-10 | 2021-10-05 | X Display Company Technology Limited | LED structure with polarized light emission |
US10121710B2 (en) * | 2016-06-14 | 2018-11-06 | Innolux Corporation | Methods for manufacturing a display device |
CN111653583A (zh) * | 2016-06-14 | 2020-09-11 | 群创光电股份有限公司 | 显示装置 |
US10079252B2 (en) * | 2016-06-14 | 2018-09-18 | Innolux Corporation | Display apparatus |
CN106098697B (zh) | 2016-06-15 | 2019-04-02 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制作方法 |
CN105976725B (zh) | 2016-06-20 | 2019-04-02 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板 |
KR102605471B1 (ko) * | 2016-06-30 | 2023-11-23 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
US10332949B2 (en) * | 2016-07-06 | 2019-06-25 | Seoul Semiconductor Co., Ltd. | Display apparatus |
US10475876B2 (en) | 2016-07-26 | 2019-11-12 | X-Celeprint Limited | Devices with a single metal layer |
US10222698B2 (en) | 2016-07-28 | 2019-03-05 | X-Celeprint Limited | Chiplets with wicking posts |
US11064609B2 (en) | 2016-08-04 | 2021-07-13 | X Display Company Technology Limited | Printable 3D electronic structure |
CN107689383B (zh) * | 2016-08-05 | 2021-06-22 | 群创光电股份有限公司 | 显示装置及其制造方法 |
US10069041B2 (en) | 2016-08-05 | 2018-09-04 | Innolux Corporation | Display apparatus and manufacturing method thereof |
CN111029450B (zh) * | 2016-08-05 | 2021-08-10 | 群创光电股份有限公司 | 发光二极管显示装置 |
US10446752B2 (en) * | 2016-08-05 | 2019-10-15 | Innolux Corporation | Light-emitting diode display device |
CN106206611A (zh) | 2016-08-19 | 2016-12-07 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
DE102016115533A1 (de) | 2016-08-22 | 2018-02-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und Scheinwerfer mit einem optoelektronischen Halbleiterchip |
US10606121B2 (en) * | 2016-09-12 | 2020-03-31 | Seoul Semiconductor Co., Ltd. | Display apparatus |
CN107833903B (zh) * | 2016-09-15 | 2022-10-18 | 伊乐视有限公司 | 具有光管理系统的发光显示器 |
US9980341B2 (en) | 2016-09-22 | 2018-05-22 | X-Celeprint Limited | Multi-LED components |
US10356858B2 (en) * | 2016-09-26 | 2019-07-16 | Prilit Optronics, Inc. | MicroLED display panel |
TWI655765B (zh) * | 2016-09-26 | 2019-04-01 | 啟端光電股份有限公司 | 微發光二極體顯示面板 |
US10529701B2 (en) * | 2016-09-26 | 2020-01-07 | Prilit Optronics, Inc. | MicroLED display panel |
JP6493348B2 (ja) | 2016-09-30 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
US10157880B2 (en) | 2016-10-03 | 2018-12-18 | X-Celeprint Limited | Micro-transfer printing with volatile adhesive layer |
US10707277B2 (en) * | 2016-10-04 | 2020-07-07 | Vuereal Inc. | Method of integrating functional tuning materials with micro devices and structures thereof |
WO2018070666A1 (ko) | 2016-10-11 | 2018-04-19 | 주식회사 루멘스 | Led 디스플레이 모듈 및 그 제조방법 |
KR102634305B1 (ko) * | 2016-10-11 | 2024-02-08 | 주식회사 루멘스 | Led 픽셀 유닛 |
US20190171093A1 (en) * | 2016-10-21 | 2019-06-06 | Nippon Electric Glass Co., Ltd. | Wavelength conversion member, light-emitting device, and method for manufacturing wavelength conversion member |
KR102633079B1 (ko) * | 2016-10-28 | 2024-02-01 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
US10782002B2 (en) | 2016-10-28 | 2020-09-22 | X Display Company Technology Limited | LED optical components |
WO2018084919A1 (en) * | 2016-11-04 | 2018-05-11 | VerLASE TECHNOLOGIES LLC | Color-converting structures and light-emitting structures and visual displays made therewith |
DE102016121099A1 (de) * | 2016-11-04 | 2018-05-09 | Osram Opto Semiconductors Gmbh | Herstellung von strahlungsemittierenden halbleiterbauelementen |
KR102673721B1 (ko) * | 2016-11-07 | 2024-06-11 | 삼성전자주식회사 | Led 패널 및 그 제조 방법 |
CN109964155B (zh) * | 2016-11-07 | 2021-07-09 | 富士胶片株式会社 | 含荧光体膜及背光单元 |
US10347168B2 (en) | 2016-11-10 | 2019-07-09 | X-Celeprint Limited | Spatially dithered high-resolution |
KR102674066B1 (ko) * | 2016-11-11 | 2024-06-13 | 삼성전자주식회사 | 발광 소자 패키지 |
US10600671B2 (en) | 2016-11-15 | 2020-03-24 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
TWI739949B (zh) * | 2016-11-15 | 2021-09-21 | 愛爾蘭商艾克斯展示公司技術有限公司 | 微轉印可印刷覆晶結構及方法 |
US10395966B2 (en) | 2016-11-15 | 2019-08-27 | X-Celeprint Limited | Micro-transfer-printable flip-chip structures and methods |
WO2018100243A2 (en) * | 2016-11-30 | 2018-06-07 | Tactotek Oy | Illuminated structure and related method of manufacture |
US10319880B2 (en) * | 2016-12-02 | 2019-06-11 | Innolux Corporation | Display device |
US11193059B2 (en) | 2016-12-13 | 2021-12-07 | Current Lighting Solutions, Llc | Processes for preparing color stable red-emitting phosphor particles having small particle size |
US10297502B2 (en) | 2016-12-19 | 2019-05-21 | X-Celeprint Limited | Isolation structure for micro-transfer-printable devices |
US10438859B2 (en) | 2016-12-19 | 2019-10-08 | X-Celeprint Limited | Transfer printed device repair |
KR102605174B1 (ko) * | 2016-12-19 | 2023-11-22 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
US9977248B1 (en) * | 2016-12-21 | 2018-05-22 | PhantaField, Inc. | Augmented reality display system |
WO2018116814A1 (ja) | 2016-12-22 | 2018-06-28 | シャープ株式会社 | 表示装置および製造方法 |
JP7108171B2 (ja) * | 2016-12-27 | 2022-07-28 | 日亜化学工業株式会社 | 発光装置 |
US10193018B2 (en) * | 2016-12-29 | 2019-01-29 | Intel Corporation | Compact low power head-mounted display with light emitting diodes that exhibit a desired beam angle |
US10367171B2 (en) * | 2016-12-29 | 2019-07-30 | Research & Business Foundation Sungkyunkwan University | Low reflective display device |
CN106684098B (zh) * | 2017-01-06 | 2019-09-10 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其修复方法 |
US10832609B2 (en) | 2017-01-10 | 2020-11-10 | X Display Company Technology Limited | Digital-drive pulse-width-modulated output system |
US12015103B2 (en) * | 2017-01-10 | 2024-06-18 | PlayNitride Display Co., Ltd. | Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions |
DE102017101267B4 (de) * | 2017-01-24 | 2023-11-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
CN106782128A (zh) * | 2017-01-24 | 2017-05-31 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制造方法 |
KR101992342B1 (ko) * | 2017-01-26 | 2019-06-24 | 주식회사 엘지화학 | 마이크로 led 및 이를 포함하는 디스플레이 장치 |
US10332868B2 (en) | 2017-01-26 | 2019-06-25 | X-Celeprint Limited | Stacked pixel structures |
WO2018140727A1 (en) | 2017-01-27 | 2018-08-02 | Lilibrand Llc | Lighting systems with high color rendering index and uniform planar illumination |
US10431723B2 (en) * | 2017-01-31 | 2019-10-01 | Apple Inc. | Micro LED mixing cup |
US10468391B2 (en) | 2017-02-08 | 2019-11-05 | X-Celeprint Limited | Inorganic light-emitting-diode displays with multi-ILED pixels |
US11916096B2 (en) * | 2017-02-09 | 2024-02-27 | Vuereal Inc. | Circuit and system integration onto a micro-device substrate |
US20180328552A1 (en) | 2017-03-09 | 2018-11-15 | Lilibrand Llc | Fixtures and lighting accessories for lighting devices |
US10396137B2 (en) | 2017-03-10 | 2019-08-27 | X-Celeprint Limited | Testing transfer-print micro-devices on wafer |
KR102393071B1 (ko) * | 2017-03-27 | 2022-05-03 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
US11024608B2 (en) | 2017-03-28 | 2021-06-01 | X Display Company Technology Limited | Structures and methods for electrical connection of micro-devices and substrates |
CN106784203B (zh) * | 2017-03-31 | 2019-01-04 | 深圳市华星光电技术有限公司 | 一种像素结构及制造方法 |
SG11201909518YA (en) * | 2017-04-13 | 2019-11-28 | Hong Kong Beida Jade Bird Display Ltd | Led-oled hybrid self-emissive display |
US20180308909A1 (en) * | 2017-04-19 | 2018-10-25 | Int Tech Co., Ltd. | Light emitting device |
US10468397B2 (en) | 2017-05-05 | 2019-11-05 | X-Celeprint Limited | Matrix addressed tiles and arrays |
CN107170773B (zh) * | 2017-05-23 | 2019-09-17 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其制作方法 |
CN107170772A (zh) * | 2017-05-23 | 2017-09-15 | 深圳市华星光电技术有限公司 | 微发光二极管阵列基板的封装结构 |
JP2018205456A (ja) | 2017-06-01 | 2018-12-27 | 株式会社ブイ・テクノロジー | フルカラーled表示パネル |
CN108987423B (zh) | 2017-06-05 | 2023-09-12 | 三星电子株式会社 | 显示装置 |
US20190140017A1 (en) * | 2017-06-13 | 2019-05-09 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Micro led color display device |
CN107068707A (zh) * | 2017-06-13 | 2017-08-18 | 深圳市华星光电技术有限公司 | Micro LED彩色显示器件 |
CN106997745A (zh) | 2017-06-15 | 2017-08-01 | 京东方科技集团股份有限公司 | 一种显示装置及其驱动方法 |
KR102455483B1 (ko) | 2017-06-30 | 2022-10-19 | 삼성전자주식회사 | Led 장치 및 그 제조 방법 |
US10804880B2 (en) | 2018-12-03 | 2020-10-13 | X-Celeprint Limited | Device structures with acoustic wave transducers and connection posts |
US10943946B2 (en) | 2017-07-21 | 2021-03-09 | X Display Company Technology Limited | iLED displays with substrate holes |
CN107424524B (zh) * | 2017-07-25 | 2020-10-02 | 深圳市华星光电技术有限公司 | 一种微型led显示面板 |
TWI639230B (zh) * | 2017-08-03 | 2018-10-21 | 錼創科技股份有限公司 | 微型發光二極體顯示面板 |
JP2019028380A (ja) | 2017-08-03 | 2019-02-21 | 株式会社ブイ・テクノロジー | フルカラーled表示パネル |
US10832935B2 (en) | 2017-08-14 | 2020-11-10 | X Display Company Technology Limited | Multi-level micro-device tethers |
KR20200035316A (ko) * | 2017-08-24 | 2020-04-02 | 코닝 인코포레이티드 | 높은 동작 범위의 마이크로 led 백라이팅을 위한 시스템들 및 방법들 |
US10957825B2 (en) | 2017-09-25 | 2021-03-23 | Lg Innotek Co., Ltd. | Lighting module and lighting apparatus having thereof |
CN109557714A (zh) * | 2017-09-27 | 2019-04-02 | 群创光电股份有限公司 | 光源装置及显示装置 |
CN107633777A (zh) * | 2017-10-12 | 2018-01-26 | 深圳市创显光电有限公司 | 一种led显示装置及其制造方法 |
CN107656398A (zh) * | 2017-10-13 | 2018-02-02 | 惠州市华星光电技术有限公司 | 液晶显示器及其背光模组 |
TWI739931B (zh) * | 2017-10-18 | 2021-09-21 | 優顯科技股份有限公司 | 顯示裝置 |
KR102373995B1 (ko) * | 2017-10-30 | 2022-03-11 | 엘지디스플레이 주식회사 | 터치 스크린 일체형 표시 장치 |
WO2019093533A1 (ko) | 2017-11-08 | 2019-05-16 | 서울바이오시스주식회사 | 복수의 픽셀들을 포함하는 디스플레이용 발광 다이오드 유닛 및 그것을 갖는 디스플레이 장치 |
US10836200B2 (en) | 2017-11-13 | 2020-11-17 | X Display Company Technology Limited | Rigid micro-modules with ILED and light conductor |
JP2019102664A (ja) | 2017-12-04 | 2019-06-24 | 株式会社ブイ・テクノロジー | Led表示パネルの製造方法 |
KR102582424B1 (ko) * | 2017-12-14 | 2023-09-25 | 삼성전자주식회사 | 발광소자 패키지 및 이를 이용한 디스플레이 장치 |
DE102017129981A1 (de) * | 2017-12-14 | 2019-06-19 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Betriebsverfahren für eine Anzeigevorrichtung |
KR101890582B1 (ko) | 2017-12-14 | 2018-08-22 | 엘지디스플레이 주식회사 | 발광 다이오드 칩, 마이크로 디스플레이 장치 |
TWI640972B (zh) * | 2017-12-14 | 2018-11-11 | 宏齊科技股份有限公司 | 顯示裝置及其光源模組 |
KR102550325B1 (ko) * | 2017-12-20 | 2023-06-30 | 엘지디스플레이 주식회사 | 마이크로led 표시장치 및 그 구동방법 |
US10297585B1 (en) | 2017-12-21 | 2019-05-21 | X-Celeprint Limited | Multi-resolution compound micro-devices |
US10340308B1 (en) | 2017-12-22 | 2019-07-02 | X Development Llc | Device with multiple vertically separated terminals and methods for making the same |
KR102521100B1 (ko) * | 2018-01-08 | 2023-04-14 | 삼성디스플레이 주식회사 | 표시 장치 |
JP6665872B2 (ja) | 2018-01-15 | 2020-03-13 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US11404400B2 (en) | 2018-01-24 | 2022-08-02 | Apple Inc. | Micro LED based display panel |
TWI642047B (zh) * | 2018-01-26 | 2018-11-21 | 鼎展電子股份有限公司 | 可撓性微發光二極體顯示模組 |
JP6999434B2 (ja) * | 2018-01-29 | 2022-01-18 | シャープ株式会社 | 表示装置、表示システム、および表示装置の製造方法 |
JP2019135738A (ja) | 2018-02-05 | 2019-08-15 | 株式会社ブイ・テクノロジー | フルカラーled表示パネル及びその製造方法 |
TWI645394B (zh) * | 2018-02-06 | 2018-12-21 | 友達光電股份有限公司 | 顯示裝置及其驅動方法 |
JP2019140361A (ja) * | 2018-02-15 | 2019-08-22 | 株式会社ブイ・テクノロジー | フルカラーled表示パネル及びその製造方法 |
CN110189642B (zh) * | 2018-02-22 | 2021-10-26 | 和鑫光电股份有限公司 | 显示装置 |
US10244687B1 (en) * | 2018-02-28 | 2019-04-02 | Spectrum King LLC | LED grow light system |
US10690920B2 (en) | 2018-02-28 | 2020-06-23 | X Display Company Technology Limited | Displays with transparent bezels |
US11189605B2 (en) | 2018-02-28 | 2021-11-30 | X Display Company Technology Limited | Displays with transparent bezels |
CN108364971B (zh) * | 2018-03-20 | 2021-03-30 | 厦门市三安光电科技有限公司 | 微发光元件、微发光二极管及其转印方法 |
US10437402B1 (en) | 2018-03-27 | 2019-10-08 | Shaoher Pan | Integrated light-emitting pixel arrays based devices by bonding |
KR102546733B1 (ko) | 2018-03-30 | 2023-06-23 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI724407B (zh) * | 2018-04-12 | 2021-04-11 | 鴻海精密工業股份有限公司 | 微型發光二極體顯示面板及其製備方法 |
KR102559514B1 (ko) * | 2018-04-13 | 2023-07-27 | 삼성디스플레이 주식회사 | 표시 장치 |
US10325894B1 (en) | 2018-04-17 | 2019-06-18 | Shaoher Pan | Integrated multi-color light-emitting pixel arrays based devices by bonding |
US10910355B2 (en) | 2018-04-30 | 2021-02-02 | X Display Company Technology Limited | Bezel-free displays |
US11041609B2 (en) * | 2018-05-01 | 2021-06-22 | Ecosense Lighting Inc. | Lighting systems and devices with central silicone module |
KR102593592B1 (ko) * | 2018-05-04 | 2023-10-25 | 엘지이노텍 주식회사 | 조명 장치 |
CN108573992A (zh) * | 2018-05-08 | 2018-09-25 | 业成科技(成都)有限公司 | 显示面板、制备方法及应用该显示面板的电子装置 |
US10505079B2 (en) | 2018-05-09 | 2019-12-10 | X-Celeprint Limited | Flexible devices and methods using laser lift-off |
GB201807747D0 (en) | 2018-05-13 | 2018-06-27 | Optovate Ltd | Colour micro-LED display apparatus |
WO2019222094A1 (en) | 2018-05-14 | 2019-11-21 | Carbon, Inc. | Stereolithography apparatus with individually addressable light source arrays |
KR102538472B1 (ko) * | 2018-05-18 | 2023-06-01 | 엘지이노텍 주식회사 | 조명 모듈 및 이를 구비한 조명 장치 |
CN110553166A (zh) * | 2018-05-30 | 2019-12-10 | 周卓煇 | 对人体友善的光源及其用途 |
TWI684386B (zh) * | 2018-05-30 | 2020-02-01 | 國立清華大學 | 對人體友善的光源及其用途 |
CN110630913B (zh) * | 2018-05-30 | 2022-02-01 | 周卓煇 | 亮度色温可调光源及其用途 |
TWI663746B (zh) * | 2018-05-30 | 2019-06-21 | 國立清華大學 | 亮度色溫可調光源及其用途 |
US10832934B2 (en) | 2018-06-14 | 2020-11-10 | X Display Company Technology Limited | Multi-layer tethers for micro-transfer printing |
GB201810774D0 (en) | 2018-06-29 | 2018-08-15 | Barco Nv | Display with quantum dot or quantum platelet converter |
CN108878626B (zh) * | 2018-06-29 | 2020-02-18 | 京东方科技集团股份有限公司 | 一种显示面板及制作方法、显示装置 |
KR102600928B1 (ko) * | 2018-07-05 | 2023-11-14 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 그의 제조 방법 |
US10714001B2 (en) | 2018-07-11 | 2020-07-14 | X Display Company Technology Limited | Micro-light-emitting-diode displays |
KR102657126B1 (ko) * | 2018-07-20 | 2024-04-16 | 삼성디스플레이 주식회사 | 발광 장치 및 이를 구비한 표시 장치 |
US10885834B2 (en) * | 2018-07-31 | 2021-01-05 | Nichia Corporation | Image display device |
TWI827639B (zh) * | 2018-08-09 | 2024-01-01 | 美商凱特伊夫公司 | 具有光耦合及轉換層的發光二極體與形成像素之方法 |
US10796971B2 (en) | 2018-08-13 | 2020-10-06 | X Display Company Technology Limited | Pressure-activated electrical interconnection with additive repair |
CN109031844A (zh) * | 2018-08-13 | 2018-12-18 | 南方科技大学 | 一种显示装置 |
KR102626051B1 (ko) * | 2018-08-14 | 2024-01-19 | 삼성디스플레이 주식회사 | 발광 소자, 발광 소자를 포함하는 픽셀 구조체 및 그 제조 방법 |
US11552228B2 (en) * | 2018-08-17 | 2023-01-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
TWI721308B (zh) * | 2018-08-17 | 2021-03-11 | 英屬開曼群島商錼創科技股份有限公司 | 微型發光二極體顯示裝置 |
KR20200021399A (ko) * | 2018-08-20 | 2020-02-28 | 삼성전자주식회사 | 디스플레이 장치 및 그 제조 방법 |
CN110875359A (zh) * | 2018-08-31 | 2020-03-10 | 昆山工研院新型平板显示技术中心有限公司 | 显示面板 |
KR102509929B1 (ko) * | 2018-09-05 | 2023-03-14 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
JP2020043140A (ja) | 2018-09-06 | 2020-03-19 | 株式会社ブイ・テクノロジー | Led表示パネルの製造方法及びled表示パネル |
US11089682B2 (en) * | 2018-09-12 | 2021-08-10 | Lg Innotek Co., Ltd. | Flexible circuit board, chip package including the same, and electronic device including the chip package |
KR102536489B1 (ko) * | 2018-09-18 | 2023-05-25 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN109273479B (zh) * | 2018-09-20 | 2021-07-23 | 上海天马微电子有限公司 | 一种显示面板及其制作方法 |
TWI676980B (zh) * | 2018-09-27 | 2019-11-11 | 友達光電股份有限公司 | 顯示器 |
JP7144886B2 (ja) | 2018-09-27 | 2022-09-30 | カティーバ, インコーポレイテッド | 量子ドットカラーフィルタインク組成物、および量子ドットカラーフィルタインク組成物を利用したデバイス |
KR102620974B1 (ko) * | 2018-10-05 | 2024-01-05 | 삼성전자주식회사 | 디스플레이 장치 및 그 제조 방법 |
CN111048654B (zh) | 2018-10-12 | 2021-10-22 | 财团法人工业技术研究院 | 光电元件封装体 |
US10573544B1 (en) | 2018-10-17 | 2020-02-25 | X-Celeprint Limited | Micro-transfer printing with selective component removal |
US10796938B2 (en) | 2018-10-17 | 2020-10-06 | X Display Company Technology Limited | Micro-transfer printing with selective component removal |
JP7380584B2 (ja) * | 2018-10-24 | 2023-11-15 | ソニーグループ株式会社 | 表示装置および照明装置 |
KR102657536B1 (ko) * | 2018-10-24 | 2024-04-12 | 엘지디스플레이 주식회사 | 표시패널 및 표시패널의 발광 다이오드 소자를 비활성화시키는 방법 |
KR20200049394A (ko) | 2018-10-31 | 2020-05-08 | 엘지디스플레이 주식회사 | 표시장치 및 그 제조 방법 |
US10804441B2 (en) * | 2018-10-31 | 2020-10-13 | Visera Technologies Company Limited | Light-emitting device with yellow color filters |
KR102579915B1 (ko) * | 2018-11-22 | 2023-09-18 | 삼성디스플레이 주식회사 | 표시 장치 및 그것의 제조 방법 |
KR102668256B1 (ko) | 2018-11-27 | 2024-05-21 | 엘지디스플레이 주식회사 | 스트레쳐블 표시 장치 |
FR3089351B1 (fr) * | 2018-11-30 | 2022-07-22 | Commissariat Energie Atomique | DISPOSITIF OPTOELECTRONIQUE A DIODE ELECTROLUMINESCENTE EMETTANT DANS l’ULTRAVIOLET SUR LAQUELLE EST AGENCE UN DISPOSITIF OPTIQUE |
US10790173B2 (en) | 2018-12-03 | 2020-09-29 | X Display Company Technology Limited | Printed components on substrate posts |
US11274035B2 (en) | 2019-04-24 | 2022-03-15 | X-Celeprint Limited | Overhanging device structures and related methods of manufacture |
US20210002128A1 (en) | 2018-12-03 | 2021-01-07 | X-Celeprint Limited | Enclosed cavity structures |
US11528808B2 (en) | 2018-12-03 | 2022-12-13 | X Display Company Technology Limited | Printing components to substrate posts |
US11482979B2 (en) | 2018-12-03 | 2022-10-25 | X Display Company Technology Limited | Printing components over substrate post edges |
CN109668062A (zh) * | 2018-12-11 | 2019-04-23 | 业成科技(成都)有限公司 | 发光二极体面光源结构 |
US11282786B2 (en) | 2018-12-12 | 2022-03-22 | X Display Company Technology Limited | Laser-formed interconnects for redundant devices |
US11353200B2 (en) | 2018-12-17 | 2022-06-07 | Korrus, Inc. | Strip lighting system for direct input of high voltage driving power |
KR102555828B1 (ko) * | 2018-12-17 | 2023-07-13 | 엘지디스플레이 주식회사 | 고 해상도 마이크로 led 표시 장치 및 그 제조 방법 |
KR20200075409A (ko) | 2018-12-18 | 2020-06-26 | 삼성전자주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
US11135835B2 (en) | 2018-12-20 | 2021-10-05 | Kateeva, Inc. | Ejection control using substrate alignment features and print region alignment features |
TWI682436B (zh) * | 2018-12-20 | 2020-01-11 | 茂丞科技股份有限公司 | 微型發光二極體巨量轉移的方法及該方法所製作的發光面板組件 |
US11483937B2 (en) | 2018-12-28 | 2022-10-25 | X Display Company Technology Limited | Methods of making printed structures |
JP7180058B2 (ja) * | 2018-12-28 | 2022-11-30 | 日亜化学工業株式会社 | 画像表示装置および画像表示装置の製造方法 |
JP7138286B2 (ja) | 2018-12-28 | 2022-09-16 | 日亜化学工業株式会社 | 画像表示装置および画像表示装置の製造方法 |
US11322460B2 (en) | 2019-01-22 | 2022-05-03 | X-Celeprint Limited | Secure integrated-circuit systems |
US11251139B2 (en) | 2019-01-22 | 2022-02-15 | X-Celeprint Limited | Secure integrated-circuit systems |
US11349052B2 (en) * | 2019-02-05 | 2022-05-31 | Facebook Technologies, Llc | Bonding interface for hybrid TFT-based micro display projector |
US11088121B2 (en) | 2019-02-13 | 2021-08-10 | X Display Company Technology Limited | Printed LED arrays with large-scale uniformity |
US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
WO2020170222A1 (en) * | 2019-02-22 | 2020-08-27 | Vuereal Inc. | Staggered and tile stacked microdevice integration and driving |
US11552163B2 (en) | 2019-02-22 | 2023-01-10 | Vuereal Inc. | Staggered and tile stacked microdevice integration and driving |
CN113424330B (zh) * | 2019-02-26 | 2024-03-01 | 京瓷株式会社 | 微型led元件搭载基板以及使用其的显示装置 |
US11164934B2 (en) | 2019-03-12 | 2021-11-02 | X Display Company Technology Limited | Tiled displays with black-matrix support screens |
US11094870B2 (en) | 2019-03-12 | 2021-08-17 | X Display Company Technology Limited | Surface-mountable pixel packages and pixel engines |
WO2020208558A1 (en) * | 2019-04-09 | 2020-10-15 | Vuereal Inc. | Repair techniques for micro-led devices and arrays |
KR20200127777A (ko) | 2019-05-03 | 2020-11-11 | 삼성전자주식회사 | Led 디스플레이 모듈, led 디스플레이 모듈의 제조 방법, 그리고 led 디스플레이 모듈을 포함하는 디스플레이 장치 |
US10714374B1 (en) | 2019-05-09 | 2020-07-14 | X Display Company Technology Limited | High-precision printed structures |
US11011572B2 (en) * | 2019-05-10 | 2021-05-18 | Innolux Corporation | Laminated structures and electronic devices |
US11094530B2 (en) | 2019-05-14 | 2021-08-17 | Applied Materials, Inc. | In-situ curing of color conversion layer |
DE102019112733A1 (de) * | 2019-05-15 | 2020-11-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierendes Bauelement und Anzeigevorrichtung |
US11239213B2 (en) | 2019-05-17 | 2022-02-01 | Applied Materials, Inc. | In-situ curing of color conversion layer in recess |
CN110190068B (zh) * | 2019-05-21 | 2020-12-08 | 深圳市华星光电半导体显示技术有限公司 | 显示面板和显示面板的制造方法 |
US11261375B2 (en) | 2019-05-22 | 2022-03-01 | General Electric Company | Method to enhance phosphor robustness and dispersability and resulting phosphors |
WO2020234853A1 (en) * | 2019-05-23 | 2020-11-26 | Vuereal Inc. | Method of integrating functional tuning materials with micro devices and structures thereof |
TWI706537B (zh) | 2019-05-28 | 2020-10-01 | 友達光電股份有限公司 | 自發光元件及發光裝置的製造方法 |
JP7208382B2 (ja) * | 2019-05-29 | 2023-01-18 | 京セラ株式会社 | 発光素子搭載基板およびそれを用いた表示装置 |
TWI682531B (zh) | 2019-06-04 | 2020-01-11 | 友達光電股份有限公司 | 顯示裝置及其製造方法 |
US10861381B1 (en) * | 2019-06-06 | 2020-12-08 | Mikro Mesa Technology Co., Ltd. | Micro light-emitting diode display having two or more types of data lines |
US11488943B2 (en) | 2019-06-14 | 2022-11-01 | X Display Company Technology Limited | Modules with integrated circuits and devices |
US10944027B2 (en) | 2019-06-14 | 2021-03-09 | X Display Company Technology Limited | Pixel modules with controllers and light emitters |
JP7398635B2 (ja) | 2019-06-17 | 2023-12-15 | パナソニックIpマネジメント株式会社 | 色変換デバイス、マイクロledディスプレイパネル、色変換デバイスの製造方法及びマイクロledディスプレイパネルの製造方法 |
CN112103308A (zh) * | 2019-06-17 | 2020-12-18 | 松下知识产权经营株式会社 | 颜色变换设备及制造方法、微型led显示器面板及制造方法 |
JP7170917B2 (ja) | 2019-06-25 | 2022-11-14 | ルミレッズ リミテッド ライアビリティ カンパニー | マイクロled用の蛍光体層 |
US11088302B2 (en) | 2019-07-08 | 2021-08-10 | Osram Opto Semiconductors Gmbh | Light-emitting device |
KR20210006241A (ko) * | 2019-07-08 | 2021-01-18 | (주)포인트엔지니어링 | 마이크로 led 그룹 기판 및 이의 제조 방법 및 마이크로 led 디스플레이 패널 및 이의 제조 방법 |
CN112305809B (zh) * | 2019-07-24 | 2022-04-19 | 佛山市国星光电股份有限公司 | Led线背光源液晶显示屏 |
US11561431B2 (en) * | 2019-07-29 | 2023-01-24 | Boe Technology Group Co., Ltd. | Binding backplane and manufacturing method thereof, backlight module and display device |
US11101417B2 (en) | 2019-08-06 | 2021-08-24 | X Display Company Technology Limited | Structures and methods for electrically connecting printed components |
JP7333226B2 (ja) * | 2019-08-28 | 2023-08-24 | 株式会社ジャパンディスプレイ | 表示装置の製造方法及び表示装置 |
CN112530988A (zh) * | 2019-09-19 | 2021-03-19 | 群创光电股份有限公司 | 电子装置及电子装置的制造方法 |
US11362243B2 (en) | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
US11011669B2 (en) | 2019-10-14 | 2021-05-18 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices |
US10847083B1 (en) | 2019-10-14 | 2020-11-24 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding |
US11302849B2 (en) * | 2019-10-25 | 2022-04-12 | Lumileds Llc | Pigmented and scattering particles in side coating materials for LED applications |
US11411043B2 (en) | 2019-10-25 | 2022-08-09 | Lumileds Llc | Pigmented and scattering particles in side coating materials for LED applications |
US11127889B2 (en) | 2019-10-30 | 2021-09-21 | X Display Company Technology Limited | Displays with unpatterned layers of light-absorbing material |
US11626856B2 (en) | 2019-10-30 | 2023-04-11 | X-Celeprint Limited | Non-linear tethers for suspended devices |
US11637540B2 (en) | 2019-10-30 | 2023-04-25 | X-Celeprint Limited | Non-linear tethers for suspended devices |
CN110767646B (zh) * | 2019-10-31 | 2021-02-09 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
TWI715277B (zh) * | 2019-11-05 | 2021-01-01 | 友達光電股份有限公司 | 顯示面板及其製造方法 |
US11296296B2 (en) | 2019-11-06 | 2022-04-05 | Applied Materials, Inc. | Organic light-emtting diode light extraction layer having graded index of refraction |
KR20210065245A (ko) | 2019-11-26 | 2021-06-04 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조 방법 |
US11121345B2 (en) | 2019-11-26 | 2021-09-14 | Applied Materials, Inc. | Structures and methods of OLED display fabrication suited for deposition of light enhancing layer |
CN110911437A (zh) * | 2019-12-06 | 2020-03-24 | 业成科技(成都)有限公司 | 微发光二极管驱动背板和显示面板 |
US11315909B2 (en) | 2019-12-20 | 2022-04-26 | X Display Company Technology Limited | Displays with embedded light emitters |
US11289630B2 (en) | 2019-12-20 | 2022-03-29 | Lumileds Llc | Tunable lighting system with preferred color rendering |
CN113129843A (zh) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | 灯板、背光控制系统及显示设备 |
WO2021148895A1 (en) | 2020-01-22 | 2021-07-29 | King Abdullah University Of Science And Technology | Light processing device array and method for manufacturing thereof |
EP4094305A4 (en) | 2020-01-22 | 2024-04-03 | Applied Materials, Inc. | MIRROR ORGANIC LIGHT-EMITTING DIODE (LED) DISPLAY DEVICES AND METHOD FOR MANUFACTURING SAME |
US11037912B1 (en) | 2020-01-31 | 2021-06-15 | X Display Company Technology Limited | LED color displays with multiple LEDs connected in series and parallel in different sub-pixels of a pixel |
JP7200434B2 (ja) * | 2020-02-13 | 2023-01-06 | 富士フイルム株式会社 | 積層体、表示装置及び有機エレクトロルミネッセンス表示装置 |
WO2021162024A1 (ja) | 2020-02-13 | 2021-08-19 | 東レ株式会社 | 波長変換基板の製造方法、波長変換基板、およびディスプレイ |
KR20220137866A (ko) | 2020-02-13 | 2022-10-12 | 도레이 카부시키가이샤 | 페이스트, 기판, 디스플레이, 및 기판의 제조 방법 |
CN113270437A (zh) | 2020-02-17 | 2021-08-17 | 京东方科技集团股份有限公司 | 背板及其制备方法、显示装置 |
JP7445120B2 (ja) | 2020-02-21 | 2024-03-07 | 日亜化学工業株式会社 | 発光装置 |
KR20210115966A (ko) * | 2020-03-17 | 2021-09-27 | 엘지이노텍 주식회사 | 조명 모듈 및 이를 구비한 조명 장치 |
KR20220165280A (ko) | 2020-04-14 | 2022-12-14 | 제네럴 일렉트릭 컴퍼니 | 협대역 발광 형광체 물질을 함유하는 잉크 조성물 및 필름 |
KR20210132786A (ko) | 2020-04-27 | 2021-11-05 | 삼성디스플레이 주식회사 | 화소 및 이를 구비한 표시 장치 |
US11552222B2 (en) | 2020-05-21 | 2023-01-10 | Lextar Electronics Corporation | Display device |
US11538849B2 (en) | 2020-05-28 | 2022-12-27 | X Display Company Technology Limited | Multi-LED structures with reduced circuitry |
EP4162538A1 (en) | 2020-06-03 | 2023-04-12 | Jade Bird Display (Shanghai) Limited | Systems and methods for multi-color led pixel unit with horizontal light emission |
TW202205688A (zh) * | 2020-06-03 | 2022-02-01 | 中國大陸商上海顯耀顯示科技有限公司 | 用於具有垂直光發射的多色led像素單元的系統及方法 |
DE112021003107T5 (de) * | 2020-06-03 | 2023-04-20 | Vuereal Inc. | Farbumwandlungs-festkörpervorrichtung |
KR102560776B1 (ko) * | 2020-06-04 | 2023-07-28 | 단국대학교 천안캠퍼스 산학협력단 | 광번짐 현상을 제거한 마이크로 led 검사장치 |
TWI729846B (zh) * | 2020-06-10 | 2021-06-01 | 友達光電股份有限公司 | 發光裝置 |
EP4136683A1 (en) * | 2020-06-19 | 2023-02-22 | Huawei Technologies Co., Ltd. | Pixel structure for electronic display, and electronic device comprising such display |
US11764095B2 (en) | 2020-07-10 | 2023-09-19 | Samsung Electronics Co., Ltd. | Wet alignment method for micro-semiconductor chip and display transfer structure |
JP2022019455A (ja) * | 2020-07-17 | 2022-01-27 | ソニーグループ株式会社 | 発光装置および画像表示装置 |
EP3944304A1 (en) * | 2020-07-20 | 2022-01-26 | Nexperia B.V. | A semiconductor device and a method of manufacture |
KR20230041786A (ko) | 2020-07-24 | 2023-03-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Uv-led 경화를 위한 티올계 가교제들을 갖는 양자점 배합물들 |
KR20220017043A (ko) | 2020-08-03 | 2022-02-11 | 삼성디스플레이 주식회사 | 표시 장치 |
US11646397B2 (en) | 2020-08-28 | 2023-05-09 | Applied Materials, Inc. | Chelating agents for quantum dot precursor materials in color conversion layers for micro-LEDs |
US11942576B2 (en) | 2020-08-28 | 2024-03-26 | Applied Materials, Inc. | Blue color converter for micro LEDs |
US11404612B2 (en) | 2020-08-28 | 2022-08-02 | Applied Materials, Inc. | LED device having blue photoluminescent material and red/green quantum dots |
CN116018693A (zh) * | 2020-09-07 | 2023-04-25 | 积水化学工业株式会社 | 用于喷墨涂布和led保护的固化性组合物、led模块、led模块的制造方法和led显示装置 |
KR20220036681A (ko) | 2020-09-16 | 2022-03-23 | 삼성전자주식회사 | 디스플레이 장치 및 그 제조 방법 |
TW202213311A (zh) * | 2020-09-18 | 2022-04-01 | 許華珍 | 一種顯示裝置 |
KR20220043993A (ko) * | 2020-09-28 | 2022-04-06 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
US11952266B2 (en) | 2020-10-08 | 2024-04-09 | X-Celeprint Limited | Micro-device structures with etch holes |
US11411146B2 (en) | 2020-10-08 | 2022-08-09 | Lumileds Llc | Protection layer for a light emitting diode |
US12006205B2 (en) | 2020-10-08 | 2024-06-11 | X-Celeprint Limited | Micro-device structures with etch holes |
US20240038819A1 (en) * | 2020-10-23 | 2024-02-01 | Toray Industries, Inc. | Display device and method for manufacturing display device |
GB2600979B (en) * | 2020-11-13 | 2023-01-11 | Plessey Semiconductors Ltd | Filter for micro LED display |
KR20220083909A (ko) * | 2020-12-11 | 2022-06-21 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20230121028A (ko) | 2020-12-25 | 2023-08-17 | 도레이 카부시키가이샤 | 격벽 부착 기판, 파장 변환 기판, 및 디스플레이, 그리고 파장 변환 기판의 제조 방법 |
CN112802832B (zh) * | 2021-01-04 | 2023-06-02 | 业成科技(成都)有限公司 | 微发光二极体显示装置及其制造方法 |
CN214409519U (zh) * | 2021-03-10 | 2021-10-15 | 台湾扬昕股份有限公司 | 光源模块及显示装置 |
DE102021106332A1 (de) | 2021-03-16 | 2022-09-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische baugruppe, displayanordnung und verfahren |
JP2022155737A (ja) | 2021-03-31 | 2022-10-14 | 日東電工株式会社 | マイクロledディスプレイ装置 |
TW202310209A (zh) * | 2021-05-04 | 2023-03-01 | 加拿大商弗瑞爾公司 | 整合式色彩轉換盒 |
KR20240018582A (ko) | 2021-06-04 | 2024-02-13 | 텍투스 코포레이션 | 통합 파이프라인이 있는 디스플레이 픽셀 |
US20220399317A1 (en) * | 2021-06-14 | 2022-12-15 | Seoul Semiconductor Co., Ltd. | Method of repairing a display panel and repaired display panel |
WO2023002728A1 (ja) * | 2021-07-21 | 2023-01-26 | 東レ株式会社 | 表示装置 |
KR20230067125A (ko) * | 2021-11-09 | 2023-05-16 | 삼성전자주식회사 | 표시 패널, 전자 장치, 및 이들의 제조 방법 |
CN116419633A (zh) * | 2021-12-31 | 2023-07-11 | 群创光电股份有限公司 | 电子装置 |
JP2023175410A (ja) * | 2022-05-30 | 2023-12-12 | キヤノン株式会社 | 表示素子、及び表示装置 |
WO2024075078A1 (en) * | 2022-10-06 | 2024-04-11 | Vuereal Inc. | Phosphor protection in microled displays |
Family Cites Families (194)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5300788A (en) | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
JPH05291624A (ja) | 1992-04-08 | 1993-11-05 | Hitachi Cable Ltd | 発光ダイオード用エピタキシャルウェーハの検査方法 |
US5442254A (en) | 1993-05-04 | 1995-08-15 | Motorola, Inc. | Fluorescent device with quantum contained particle screen |
JPH0760675A (ja) | 1993-08-27 | 1995-03-07 | Tokin Corp | 静電吸着ハンド |
JP2994219B2 (ja) | 1994-05-24 | 1999-12-27 | シャープ株式会社 | 半導体デバイスの製造方法 |
US5592358A (en) | 1994-07-18 | 1997-01-07 | Applied Materials, Inc. | Electrostatic chuck for magnetic flux processing |
TW311927B (ja) | 1995-07-11 | 1997-08-01 | Minnesota Mining & Mfg | |
JP3132353B2 (ja) | 1995-08-24 | 2001-02-05 | 松下電器産業株式会社 | チップの搭載装置および搭載方法 |
US5888847A (en) | 1995-12-08 | 1999-03-30 | Lsi Logic Corporation | Technique for mounting a semiconductor die |
US5858099A (en) | 1996-04-09 | 1999-01-12 | Sarnoff Corporation | Electrostatic chucks and a particle deposition apparatus therefor |
WO1998048319A1 (en) | 1997-04-24 | 1998-10-29 | Rainbow Displays, Inc. | Tiled flat panel displays |
JPH1126733A (ja) | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
KR100278137B1 (ko) | 1997-09-04 | 2001-01-15 | 가나이 쓰도무 | 반도체소자의 탑재방법 및 그 시스템, 반도체소자 분리장치 및ic카드의 제조방법 |
US5903428A (en) | 1997-09-25 | 1999-05-11 | Applied Materials, Inc. | Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same |
JP3406207B2 (ja) | 1997-11-12 | 2003-05-12 | シャープ株式会社 | 表示用トランジスタアレイパネルの形成方法 |
US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US6897855B1 (en) | 1998-02-17 | 2005-05-24 | Sarnoff Corporation | Tiled electronic display structure |
JP3504543B2 (ja) | 1999-03-03 | 2004-03-08 | 株式会社日立製作所 | 半導体素子の分離方法およびその装置並びに半導体素子の搭載方法 |
JP4834270B2 (ja) | 2000-01-25 | 2011-12-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | エレクトロルミネセント素子 |
US6335263B1 (en) | 2000-03-22 | 2002-01-01 | The Regents Of The University Of California | Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
JP4489904B2 (ja) | 2000-04-14 | 2010-06-23 | 株式会社アルバック | 真空処理装置及び基板保持方法 |
US6558109B2 (en) | 2000-05-26 | 2003-05-06 | Automation Technology, Inc. | Method and apparatus for separating wafers |
JP4467720B2 (ja) | 2000-06-15 | 2010-05-26 | 株式会社アルバック | 基板搬送装置 |
JP3906653B2 (ja) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
JP2002134822A (ja) | 2000-10-24 | 2002-05-10 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP4780828B2 (ja) | 2000-11-22 | 2011-09-28 | 三井化学株式会社 | ウエハ加工用粘着テープ及びその製造方法並びに使用方法 |
JP2002164695A (ja) | 2000-11-29 | 2002-06-07 | Mitsubishi Paper Mills Ltd | 電子材料搬送用静電吸着板 |
WO2002074686A2 (en) | 2000-12-05 | 2002-09-26 | Analog Devices, Inc. | A method and device for protecting micro electromechanical systems structures during dicing of a wafer |
JP4514321B2 (ja) | 2000-12-08 | 2010-07-28 | パナソニック株式会社 | 部品実装装置 |
JP2002240943A (ja) | 2001-02-13 | 2002-08-28 | Ricoh Co Ltd | 静電搬送装置、現像装置、画像形成装置及び分級装置 |
US7569849B2 (en) | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
TWI257496B (en) | 2001-04-20 | 2006-07-01 | Toshiba Corp | Display device and method of manufacturing the same |
JP3747807B2 (ja) | 2001-06-12 | 2006-02-22 | ソニー株式会社 | 素子実装基板及び不良素子の修復方法 |
US6787435B2 (en) | 2001-07-05 | 2004-09-07 | Gelcore Llc | GaN LED with solderable backside metal |
US6656611B2 (en) | 2001-07-20 | 2003-12-02 | Osram Opto Semiconductors Gmbh | Structure-defining material for OLEDs |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
WO2003012884A1 (en) | 2001-08-01 | 2003-02-13 | Nam-Young Kim | Display system |
TW497236B (en) | 2001-08-27 | 2002-08-01 | Chipmos Technologies Inc | A soc packaging process |
US6514779B1 (en) | 2001-10-17 | 2003-02-04 | Cree, Inc. | Large area silicon carbide devices and manufacturing methods therefor |
US6822264B2 (en) | 2001-11-16 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2003282478A (ja) | 2002-01-17 | 2003-10-03 | Sony Corp | 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法 |
US7033842B2 (en) | 2002-03-25 | 2006-04-25 | Matsushita Electric Industrial Co., Ltd. | Electronic component mounting apparatus and electronic component mounting method |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP2003332633A (ja) * | 2002-05-16 | 2003-11-21 | Sony Corp | 表示装置および表示装置の製造方法 |
US6642092B1 (en) | 2002-07-11 | 2003-11-04 | Sharp Laboratories Of America, Inc. | Thin-film transistors formed on a metal foil substrate |
JP4147073B2 (ja) | 2002-09-02 | 2008-09-10 | シャープ株式会社 | 発光ダイオードの製造方法 |
DE10245631B4 (de) | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
AU2003284410A1 (en) | 2002-11-19 | 2004-06-15 | Ishikawa Seisakusho, Ltd. | Pixel control element selection transfer method, pixel control element mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate |
GB0229191D0 (en) | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
US6786390B2 (en) | 2003-02-04 | 2004-09-07 | United Epitaxy Company Ltd. | LED stack manufacturing method and its structure thereof |
JP4334892B2 (ja) | 2003-03-20 | 2009-09-30 | パナソニック株式会社 | 部品実装方法 |
JP3837121B2 (ja) | 2003-04-01 | 2006-10-25 | 株式会社ディスプレイテック21 | アクティブマトリクス型蛍光表示装置 |
CN102290409B (zh) | 2003-04-01 | 2014-01-15 | 夏普株式会社 | 发光装置 |
EP2530719B1 (en) | 2003-05-07 | 2020-08-05 | Indiana University Research and Technology Corporation | Alloyed semiconductor concentration-gradient quantum dots, use and method of fabricating thereof |
US20040227704A1 (en) | 2003-05-14 | 2004-11-18 | Wen-Chun Wang | Apparatus for improving yields and uniformity of active matrix oled panels |
US7595511B2 (en) | 2003-08-08 | 2009-09-29 | Sang-Kyu Kang | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
JP4165478B2 (ja) | 2003-11-07 | 2008-10-15 | セイコーエプソン株式会社 | 発光装置及び電子機器 |
KR100600865B1 (ko) | 2003-11-19 | 2006-07-14 | 삼성에스디아이 주식회사 | 전자파차폐수단을 포함하는 능동소자표시장치 |
TWI227570B (en) | 2003-12-11 | 2005-02-01 | South Epitaxy Corp | Light-emitting diode packaging structure |
AU2005232074A1 (en) | 2004-03-29 | 2005-10-20 | LumaChip, Inc. | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
DE602005009344D1 (de) | 2004-03-31 | 2008-10-09 | Applied Materials Inc | Verfahren und vorrichtung zur übertragung von leitenden teilen bei der herstellung von halbleiterbauelementen |
US7462861B2 (en) | 2004-04-28 | 2008-12-09 | Cree, Inc. | LED bonding structures and methods of fabricating LED bonding structures |
JP3933667B2 (ja) | 2004-04-29 | 2007-06-20 | 三星エスディアイ株式会社 | 発光表示パネル及び発光表示装置 |
US7199397B2 (en) | 2004-05-05 | 2007-04-03 | Au Optronics Corporation | AMOLED circuit layout |
EP1753611A4 (en) | 2004-05-10 | 2011-09-14 | Evident Technologies | III-V SEMICONDUCTOR NANOCRYSTAL COMPLEXES AND METHODS OF MAKING |
KR100623024B1 (ko) | 2004-06-10 | 2006-09-19 | 엘지전자 주식회사 | 고출력 led 패키지 |
US7352006B2 (en) | 2004-09-28 | 2008-04-01 | Goldeneye, Inc. | Light emitting diodes exhibiting both high reflectivity and high light extraction |
US7413918B2 (en) | 2005-01-11 | 2008-08-19 | Semileds Corporation | Method of making a light emitting diode |
US7195944B2 (en) | 2005-01-11 | 2007-03-27 | Semileds Corporation | Systems and methods for producing white-light emitting diodes |
US7563625B2 (en) | 2005-01-11 | 2009-07-21 | SemiLEDs Optoelectronics Co., Ltd. | Method of making light-emitting diodes (LEDs) with improved light extraction by roughening |
US7378288B2 (en) | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
US7535028B2 (en) | 2005-02-03 | 2009-05-19 | Ac Led Lighting, L.Lc. | Micro-LED based high voltage AC/DC indicator lamp |
KR100707955B1 (ko) | 2005-02-07 | 2007-04-16 | (주) 비앤피 사이언스 | 발광 다이오드 및 이의 제조 방법 |
DE102005009060A1 (de) | 2005-02-28 | 2006-09-07 | Osram Opto Semiconductors Gmbh | Modul mit strahlungsemittierenden Halbleiterkörpern |
US7262438B2 (en) | 2005-03-08 | 2007-08-28 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | LED mounting having increased heat dissipation |
US7411225B2 (en) | 2005-03-21 | 2008-08-12 | Lg Electronics Inc. | Light source apparatus |
US7205652B2 (en) | 2005-03-23 | 2007-04-17 | Delphi Technologies, Inc | Electronic assembly including multiple substrates |
US20060238463A1 (en) | 2005-04-26 | 2006-10-26 | Lg Electronics Inc. | Electro luminescence display device |
TWI284421B (en) | 2005-06-21 | 2007-07-21 | Uni Light Technology Inc | LED structure for flip-chip package and method thereof |
TWI422044B (zh) | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
US8138502B2 (en) | 2005-08-05 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
US7498240B2 (en) | 2005-08-31 | 2009-03-03 | Micron Technology, Inc. | Microfeature workpieces, carriers, and associated methods |
KR100745346B1 (ko) | 2005-09-20 | 2007-08-02 | 삼성에스디아이 주식회사 | 박막 증착장치 및 이를 이용한 박막 증착방법 |
KR20070042214A (ko) | 2005-10-18 | 2007-04-23 | 김성진 | 질화물 반도체 발광 다이오드 및 그 제조방법 |
EP1780798A1 (en) | 2005-10-27 | 2007-05-02 | Barco, naamloze vennootschap. | Integrated led devices with increased pixel fill factor for achieving improved image quality of led display panels |
JP2007173408A (ja) | 2005-12-20 | 2007-07-05 | Toshiba Lighting & Technology Corp | 発光装置 |
KR101222539B1 (ko) | 2005-12-23 | 2013-01-16 | 엘지디스플레이 주식회사 | 전계발광소자와 전계발광소자의 커패시터 |
TWI294254B (en) | 2006-01-02 | 2008-03-01 | Au Optronics Corp | Pixel structure organic electro-luminescence displaying unit and repairing method thereo |
US7737451B2 (en) | 2006-02-23 | 2010-06-15 | Cree, Inc. | High efficiency LED with tunnel junction layer |
US7859526B2 (en) | 2006-05-01 | 2010-12-28 | Konicek Jeffrey C | Active matrix emissive display and optical scanner system, methods and applications |
US7910945B2 (en) | 2006-06-30 | 2011-03-22 | Cree, Inc. | Nickel tin bonding system with barrier layer for semiconductor wafers and devices |
KR20090057114A (ko) * | 2006-09-27 | 2009-06-03 | 가부시끼가이샤 도시바 | 반도체 발광 장치, 이 반도체 발광 장치로 이루어진 백라이트 및 표시 장치 |
JP4535053B2 (ja) | 2006-10-12 | 2010-09-01 | ソニー株式会社 | 発光ダイオードの配線の形成方法、発光ダイオード実装基板、ディスプレイ、バックライト、照明装置および電子機器 |
TWI313943B (en) | 2006-10-24 | 2009-08-21 | Chipmos Technologies Inc | Light emitting chip package and manufacturing thereof |
US20090028993A1 (en) | 2006-12-11 | 2009-01-29 | Pioneer Hi-Bred International, Inc. | Lactobacillus buchneri strain LN1326 and its use to improve aerobic stability of silage |
KR101610885B1 (ko) | 2007-01-17 | 2016-04-08 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프린팅기반 어셈블리에 의해 제조되는 광학 시스템 |
US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
TW200834962A (en) | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
JP2008200821A (ja) | 2007-02-21 | 2008-09-04 | Denso Corp | ハニカム体成形用金型の製造方法 |
US7985978B2 (en) | 2007-04-17 | 2011-07-26 | Himax Technologies Limited | Display and pixel circuit thereof |
US20080283190A1 (en) | 2007-05-20 | 2008-11-20 | Silverbrook Research Pty Ltd | Method of removing mems devices from a handle substrate |
US8133768B2 (en) * | 2007-05-31 | 2012-03-13 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US8415879B2 (en) | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8264777B2 (en) | 2007-06-26 | 2012-09-11 | Qd Vision, Inc. | Portable electronic device having an electro wetting display illuminated by quantum dots |
US8097478B2 (en) | 2007-06-29 | 2012-01-17 | Showa Denko K.K. | Method for producing light-emitting diode |
US7838410B2 (en) | 2007-07-11 | 2010-11-23 | Sony Corporation | Method of electrically connecting element to wiring, method of producing light-emitting element assembly, and light-emitting element assembly |
KR100839754B1 (ko) | 2007-08-14 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 이의 제조 방법 |
US8441018B2 (en) | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
CN101874296B (zh) | 2007-09-28 | 2015-08-26 | 泰塞拉公司 | 利用成对凸柱进行倒装芯片互连 |
TWI397193B (zh) | 2007-11-05 | 2013-05-21 | Univ Nat Chunghsing | Light emitting diode chip element with heat dissipation substrate and method for making the same |
KR101475520B1 (ko) | 2008-01-14 | 2014-12-23 | 삼성전자주식회사 | 잉크젯 프린트용 양자점 잉크 조성물 및 그를 이용한전자소자 |
TW200939867A (en) | 2008-03-14 | 2009-09-16 | Univ Nat Chiao Tung | Display apparatus using array of passive organic LED |
US8222063B2 (en) | 2008-03-26 | 2012-07-17 | Lattice Power (Jiangxi) Corporation | Method for fabricating robust light-emitting diodes |
JP4479827B2 (ja) | 2008-05-12 | 2010-06-09 | ソニー株式会社 | 発光ダイオード表示装置及びその製造方法 |
JP4623138B2 (ja) | 2008-05-21 | 2011-02-02 | ソニー株式会社 | 表示装置および電子機器 |
DE102008050538B4 (de) | 2008-06-06 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
CN101603636B (zh) | 2008-06-10 | 2012-05-23 | 展晶科技(深圳)有限公司 | 光源装置 |
US7927976B2 (en) | 2008-07-23 | 2011-04-19 | Semprius, Inc. | Reinforced composite stamp for dry transfer printing of semiconductor elements |
US7999454B2 (en) | 2008-08-14 | 2011-08-16 | Global Oled Technology Llc | OLED device with embedded chip driving |
US7786481B2 (en) | 2008-08-26 | 2010-08-31 | Lg Display Co., Ltd. | Organic light emitting diode display and fabricating method thereof |
JP2010056458A (ja) | 2008-08-29 | 2010-03-11 | Kyocera Corp | 発光素子の製造方法 |
TWI467691B (zh) | 2008-10-15 | 2015-01-01 | Creative Tech Corp | Electrostatic chuck and its manufacturing method |
US7854365B2 (en) | 2008-10-27 | 2010-12-21 | Asm Assembly Automation Ltd | Direct die attach utilizing heated bond head |
JP5521325B2 (ja) * | 2008-12-27 | 2014-06-11 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR101051488B1 (ko) | 2009-01-23 | 2011-07-25 | 주식회사 두성에이텍 | 발광 다이오드 유닛의 제조 방법과, 이 방법에 의하여 제조된 발광 다이오드 유닛 |
KR101001454B1 (ko) | 2009-01-23 | 2010-12-14 | 삼성모바일디스플레이주식회사 | 정전척 및 이를 구비한 유기전계발광 소자의 제조장치 |
JP2010186829A (ja) | 2009-02-10 | 2010-08-26 | Toshiba Corp | 発光素子の製造方法 |
JP5470601B2 (ja) | 2009-03-02 | 2014-04-16 | 新光電気工業株式会社 | 静電チャック |
CN101839401A (zh) * | 2009-03-20 | 2010-09-22 | 晶元光电股份有限公司 | 阵列式发光元件及其显示装置 |
WO2010111601A2 (en) | 2009-03-26 | 2010-09-30 | Semprius, Inc. | Methods of forming printable integrated circuit devices and devices formed thereby |
US8957435B2 (en) | 2009-04-28 | 2015-02-17 | Cree, Inc. | Lighting device |
US8232566B2 (en) | 2009-05-04 | 2012-07-31 | Lg Innotek Co., Ltd. | Light emitting device, package, and system |
US8125472B2 (en) | 2009-06-09 | 2012-02-28 | Global Oled Technology Llc | Display device with parallel data distribution |
US7989266B2 (en) | 2009-06-18 | 2011-08-02 | Aptina Imaging Corporation | Methods for separating individual semiconductor devices from a carrier |
WO2010149027A1 (en) | 2009-06-22 | 2010-12-29 | Industrial Technology Research Institute | Light-emitting unit array, method for fabricating the same and projection apparatus |
US20100321640A1 (en) | 2009-06-22 | 2010-12-23 | Industrial Technology Research Institute | Projection display chip |
US8173456B2 (en) | 2009-07-05 | 2012-05-08 | Industrial Technology Research Institute | Method of manufacturing a light emitting diode element |
US9048404B2 (en) | 2009-07-06 | 2015-06-02 | Zhuo Sun | Thin flat solid state light source module |
US20110012141A1 (en) | 2009-07-15 | 2011-01-20 | Le Toquin Ronan P | Single-color wavelength-converted light emitting devices |
TWM388109U (en) | 2009-10-15 | 2010-09-01 | Intematix Tech Center Corp | Light emitting diode apparatus |
TWI531088B (zh) | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | 具有分散式布拉格反射器的發光二極體晶片 |
US8642363B2 (en) | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
KR100973928B1 (ko) | 2009-12-10 | 2010-08-03 | (주)옵토니카 | Led 다이본딩 방법 |
US8334152B2 (en) | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
JP5050045B2 (ja) | 2009-12-22 | 2012-10-17 | 株式会社東芝 | 発光装置 |
TWI467798B (zh) | 2009-12-28 | 2015-01-01 | Hon Hai Prec Ind Co Ltd | 發光二極體晶片之製備方法 |
US20130016494A1 (en) | 2010-01-11 | 2013-01-17 | Ingo Speier | Package for light emitting and receiving devices |
KR101084191B1 (ko) | 2010-02-16 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
US20120320307A1 (en) | 2010-02-18 | 2012-12-20 | Sharp Kabushiki Kaisha | Active matrix substrate, glass substrate, liquid crystal panel and liquid crystal display device |
EP2367203A1 (en) | 2010-02-26 | 2011-09-21 | Samsung LED Co., Ltd. | Semiconductor light emitting device having multi-cell array and method for manufacturing the same |
WO2011123285A1 (en) | 2010-03-29 | 2011-10-06 | Semprius, Inc. | Selective transfer of active components |
US8294168B2 (en) * | 2010-06-04 | 2012-10-23 | Samsung Electronics Co., Ltd. | Light source module using quantum dots, backlight unit employing the light source module, display apparatus, and illumination apparatus |
US20120155076A1 (en) | 2010-06-24 | 2012-06-21 | Intematix Corporation | Led-based light emitting systems and devices |
TWI451596B (zh) | 2010-07-20 | 2014-09-01 | Epistar Corp | 一種陣列式發光元件 |
TW201208142A (en) * | 2010-08-06 | 2012-02-16 | Foxsemicon Integrated Tech Inc | Light emitting diode |
US8563334B2 (en) | 2010-09-14 | 2013-10-22 | Tsmc Solid State Lighting Ltd. | Method to remove sapphire substrate |
CN102427075B (zh) * | 2010-10-12 | 2013-08-21 | 友达光电股份有限公司 | 发光二极管装置及场序显示器 |
TWI476961B (zh) | 2010-10-12 | 2015-03-11 | 友達光電股份有限公司 | 發光二極體裝置 |
JP5740901B2 (ja) | 2010-10-15 | 2015-07-01 | ソニー株式会社 | 発光装置および表示装置 |
US8552454B2 (en) | 2010-11-29 | 2013-10-08 | Epistar Corporation | Light-emitting device and light mixing device |
JP5740939B2 (ja) | 2010-11-29 | 2015-07-01 | 住友電気工業株式会社 | 半導体装置の製造方法 |
KR101889918B1 (ko) | 2010-12-14 | 2018-09-21 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
US20120168714A1 (en) | 2011-01-03 | 2012-07-05 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (vled) die and method of fabrication |
EP2666193B1 (en) | 2011-01-17 | 2020-07-29 | Lumileds Holding B.V. | Led package comprising encapsulation |
US20120250320A1 (en) | 2011-03-31 | 2012-10-04 | Xicato, Inc. | Color conversion cavities for led-based illumination modules |
US8329485B2 (en) | 2011-05-09 | 2012-12-11 | Hong Kong Applied Science and Technology Research Institute Company Limited | LED phosphor ink composition for ink-jet printing |
US8785222B2 (en) | 2011-05-09 | 2014-07-22 | Hong Kong Applied Science and Technology Research Institute Company Limited | Phosphor ink composition |
US8497143B2 (en) | 2011-06-21 | 2013-07-30 | Cofan Usa, Inc. | Reflective pockets in LED mounting |
KR101793741B1 (ko) | 2011-06-23 | 2017-11-03 | 엘지이노텍 주식회사 | 표시장치 |
JP2013037138A (ja) * | 2011-08-05 | 2013-02-21 | Panasonic Corp | 自発光型表示装置 |
US10388584B2 (en) | 2011-09-06 | 2019-08-20 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming Fo-WLCSP with recessed interconnect area in peripheral region of semiconductor die |
JP2013098458A (ja) * | 2011-11-04 | 2013-05-20 | Mitsubishi Chemicals Corp | 半導体発光装置及びこれを用いた照明器具 |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
US8426227B1 (en) | 2011-11-18 | 2013-04-23 | LuxVue Technology Corporation | Method of forming a micro light emitting diode array |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US20130187179A1 (en) | 2012-01-23 | 2013-07-25 | Sharp Kabushiki Kaisha | Light emitting diode with improved directionality |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
TW201336123A (zh) | 2012-02-17 | 2013-09-01 | Walsin Lihwa Corp | 高壓發光二極體晶片及其製造方法 |
US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
US8415771B1 (en) | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
US8415767B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
CN102751275B (zh) * | 2012-07-19 | 2015-02-04 | 广东威创视讯科技股份有限公司 | 一种发光二极管显示屏,及其制造方法 |
US8933433B2 (en) | 2012-07-30 | 2015-01-13 | LuxVue Technology Corporation | Method and structure for receiving a micro device |
US8947001B2 (en) | 2012-09-06 | 2015-02-03 | Cooledge Lighting Inc. | Wiring boards for array-based electronic devices |
US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9484504B2 (en) * | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9111464B2 (en) * | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
-
2013
- 2013-06-18 US US13/920,912 patent/US9111464B2/en active Active
-
2014
- 2014-06-09 CN CN201480034717.6A patent/CN105339996B/zh active Active
- 2014-06-09 JP JP2016521438A patent/JP6290389B2/ja active Active
- 2014-06-09 WO PCT/US2014/041487 patent/WO2014204694A1/en active Application Filing
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US20140367633A1 (en) | 2014-12-18 |
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US9111464B2 (en) | 2015-08-18 |
CN105339996A (zh) | 2016-02-17 |
US9865577B2 (en) | 2018-01-09 |
US20170162553A1 (en) | 2017-06-08 |
EP2997564A1 (en) | 2016-03-23 |
KR20160010869A (ko) | 2016-01-28 |
EP2997564B1 (en) | 2017-09-06 |
US20150331285A1 (en) | 2015-11-19 |
CN105339996B (zh) | 2018-02-09 |
TWI570953B (zh) | 2017-02-11 |
WO2014204694A1 (en) | 2014-12-24 |
JP2016523450A (ja) | 2016-08-08 |
TW201515260A (zh) | 2015-04-16 |
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