CN107170772A - 微发光二极管阵列基板的封装结构 - Google Patents

微发光二极管阵列基板的封装结构 Download PDF

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CN107170772A
CN107170772A CN201710370182.5A CN201710370182A CN107170772A CN 107170772 A CN107170772 A CN 107170772A CN 201710370182 A CN201710370182 A CN 201710370182A CN 107170772 A CN107170772 A CN 107170772A
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micro
substrate
light emitting
led array
protective layer
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/548,094 priority patent/US20180342654A1/en
Priority to PCT/CN2017/089084 priority patent/WO2018214193A1/zh
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Abstract

本发明提供一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。

Description

微发光二极管阵列基板的封装结构
技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构。
背景技术
微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transferhead)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED barechip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成MicroLED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。
在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构，是本领域亟需解决的技术问题之一。
发明内容
本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；
所述微发光二极管阵列包括数个阵列排布的微发光二极管；
可选地，所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中。
所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。
可选地，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板与所述保护层之间的数个支撑柱，所述数个支撑柱设于所述基板上，以对所述保护层进行支撑。
可选地，所述数个凹槽设于所述基板的上表面上，所述保护层为通过涂布工艺形成在所述基板上的有机膜层。
所述数个凹槽与所述数个微发光二极管一一对应设置，每一凹槽的深度大于其内容置的微发光二极管的高度。
每一凹槽的槽壁上均设有反射层。
可选地，所述数个凹槽设于所述保护层的下表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。
所述数个凹槽通过激光打孔、或压印的方式形成于所述保护层的下表面上；
所述凹槽的侧壁为弧面状，所述凹槽的槽口为圆形、或椭圆形。
每一凹槽对应覆盖一个或多个微发光二极管。
所述基板为TFT阵列基板。
本发明的有益效果：本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图；
图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图；
图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图；
图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图；
图5为本发明微发光二极管阵列基板的封装结构第四实施例中数个凹槽在保护层上的排布示意图；
图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图，在本实施例中，所述微发光二极管阵列基板的封装结构包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上方并覆盖所述微发光二极管阵列3的保护层2；
所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；
所述基板1的上表面上设有数个凹槽51，所述数个微发光二极管31容置于所述数个凹槽51中。
具体地，本实施例中，所述保护层2可以为玻璃(Glass)板、塑料板、或其他材质的板材，所述保护层2起到封装盖板的作用；例如，所述保护层2为聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、或聚甲基丙烯酸酯(PMA)等板材。
优选地，所述保护层2的厚度大于1mm。
具体地，每一凹槽51的槽壁上均设有反射层52，通过对微发光二极管31发出的光进行反射，从而可以有效提高微发光二极管阵列基板的光出射效率。
具体地，所述数个凹槽51与所述数个微发光二极管31一一对应设置。
优选地，每一凹槽51的深度大于其内容置的微发光二极管31的高度，即每一微发光二极管31均完全陷入在对应的凹槽51内，从而有利于所述保护层2设置在所述基板1上，以对微发光二极管阵列基板进行封装。
具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。
请参阅图2，图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图，本实施例与上述第一实施例相比，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板1与所述保护层2之间的数个支撑柱41，所述数个支撑柱41设于所述基板1上，以对所述保护层2进行支撑。其它技术特征均与上述第一实施例相同，在此不再赘述
请参阅图3，图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图，本实施例与上述第一实施例相比，所述保护层2为通过涂布工艺形成在所述基板1上的有机膜层，例如，所述保护层2为可溶性聚四氟乙烯(PFA)材料的膜层，其通过涂布及固化工艺形成在所述基板1上。
具体地，在本实施例中，所述保护层2的厚度只需满足覆盖住所述数个微发光二极管31即可，对其厚度没有明确限制。其它技术特征均与上述第一实施例相同，在此不再赘述
请参阅图4，图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图，本实施例与上述第一实施例相比，所述数个凹槽51设于所述保护层2的下表面上。
具体地，本实施例中，所述凹槽51的侧壁为弧面状，所述凹槽51的槽口可以为圆形、或椭圆形等形状，由于玻璃、或塑料材料的保护层2与凹槽51内的介质(例如空气)存在折射率的差异，从而所述凹槽52可以对其覆盖的微发光二极管31发出的光产生聚光的效果，进而可适当提高微发光二极管阵列基板的光出射效率。
具体地，所述数个凹槽51通过激光打孔、或压印的方式形成于所述保护层2的下表面上。
具体地，如图5所示，所述数个凹槽51与所述数个微发光二极管31对应的按照阵列排布的方式设于所述保护层2的下表面上，且所述凹槽51按照其孔径大于所述微发光二极管31的长度进行设置，每一凹槽51可对应覆盖一个或多个微发光二极管31；具体在本实施例中，每一凹槽51对应覆盖一个微发光二极管31。其它技术特征均与上述第四实施例相同，在此不再赘述。
请参阅图6，图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图，本实施例与上述第四实施例相比，具体地，每一凹槽51对应覆盖两个微发光二极管31，相应地，所述凹槽51按照其孔径大于两个微发光二极管31的长度进行设置。其它技术特征均与上述第四实施例相同，在此不再赘述。
综上所述，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种微发光二极管阵列基板的封装结构，其特征在于，包括基板(1)、设于所述基板(1)上的微发光二极管阵列(3)、设于所述基板(1)上方并覆盖所述微发光二极管阵列(3)的保护层(2)；
所述微发光二极管阵列(3)包括数个阵列排布的微发光二极管(31)；
所述基板(1)的上表面上、或所述保护层(2)的下表面上设有数个凹槽(51)，所述数个微发光二极管(31)容置于所述数个凹槽(51)中。
2.如权利要求1所述的微发光二极管阵列基板的封装结构，其特征在于，所述数个凹槽(51)设于所述基板(1)的上表面上，所述保护层(2)为玻璃、或塑料材料的板材，所述保护层(2)的厚度大于1mm。
3.如权利要求2所述的微发光二极管阵列基板的封装结构，其特征在于，还包括设于所述基板(1)与所述保护层(2)之间的数个支撑柱(41)，所述数个支撑柱(41)设于所述基板(1)上，以对所述保护层(2)进行支撑。
4.如权利要求1所述的微发光二极管阵列基板的封装结构，其特征在于，所述数个凹槽(51)设于所述基板(1)的上表面上，所述保护层(2)为通过涂布工艺形成在所述基板(1)上的有机膜层。
5.如权利要求2或4所述的微发光二极管阵列基板的封装结构，其特征在于，所述数个凹槽(51)与所述数个微发光二极管(31)一一对应设置，每一凹槽(51)的深度大于其内容置的微发光二极管(31)的高度。
6.如权利要求2或4所述的微发光二极管阵列基板的封装结构，其特征在于，每一凹槽(51)的槽壁上均设有反射层(52)。
7.如权利要求1所述的微发光二极管阵列基板的封装结构，其特征在于，所述数个凹槽(51)设于所述保护层(2)的下表面上，所述保护层(2)为玻璃、或塑料材料的板材，所述保护层(2)的厚度大于1mm。
8.如权利要求7所述的微发光二极管阵列基板的封装结构，其特征在于，所述数个凹槽(51)通过激光打孔、或压印的方式形成于所述保护层(2)的下表面上；
所述凹槽(51)的侧壁为弧面状，所述凹槽(51)的槽口为圆形、或椭圆形。
9.如权利要求7所述的微发光二极管阵列基板的封装结构，其特征在于，每一凹槽(51)对应覆盖一个或多个微发光二极管(31)。
10.如权利要求1所述的微发光二极管阵列基板的封装结构，其特征在于，所述基板(1)为TFT阵列基板。
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