WO2018214193A1 - 微发光二极管阵列基板的封装结构 - Google Patents

微发光二极管阵列基板的封装结构 Download PDF

Info

Publication number
WO2018214193A1
WO2018214193A1 PCT/CN2017/089084 CN2017089084W WO2018214193A1 WO 2018214193 A1 WO2018214193 A1 WO 2018214193A1 CN 2017089084 W CN2017089084 W CN 2017089084W WO 2018214193 A1 WO2018214193 A1 WO 2018214193A1
Authority
WO
WIPO (PCT)
Prior art keywords
micro
substrate
emitting diode
diode array
protective layer
Prior art date
Application number
PCT/CN2017/089084
Other languages
English (en)
French (fr)
Inventor
陈黎暄
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/548,094 priority Critical patent/US20180342654A1/en
Publication of WO2018214193A1 publication Critical patent/WO2018214193A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a package structure of a micro light emitting diode array substrate.
  • a micro-light-emitting diode is a device with a size ranging from a few micrometers to a few hundred micrometers. Since it is much smaller than a normal LED, it is possible to use a single LED as a pixel (Pixel) for display.
  • the Micro LED display is a display that uses a high-density Micro LED array as a display pixel array to realize image display. Like a large-sized outdoor LED display, each pixel can be addressed and individually driven to be lit. The reduced version of the outdoor LED display reduces the pixel distance from millimeters to micrometers.
  • Micro LED displays and organic light-emitting diode (OLED) displays are self-luminous displays, but compared to micro LED displays. OLED displays also have the advantages of better material stability, longer life, no image imprinting, etc., and are considered to be the biggest competitors of OLED displays.
  • Micro LED devices Due to lattice matching, Micro LED devices must be grown by molecular beam epitaxy on a sapphire-based supply substrate, followed by laser lift-off (LLO) technology to micro-light-emitting diode bare chips (bare chip) It is separated from the supply substrate, and then transferred to a receiving substrate on which a circuit pattern has been prepared in advance by a micro transfer printing (NTP) technique to form a Micro LED array, thereby forming a Micro LED display panel.
  • LLO laser lift-off
  • NTP micro transfer printing
  • the basic principle of micro transfer is roughly: using a patterned transfer head, such as a polydimethylsiloxane (PDMS) type transfer head having a convex structure, through a sticky PDMS
  • the transfer layer adsorbs the Micro LED bare chip from the supply substrate, and then aligns the PDMS transfer head with the receiving substrate, and then attaches the Micro LED bare chip adsorbed by the PDMS transfer head to the preset position of the receiving substrate. Then, the PDMS transfer head is peeled off from the receiving substrate to complete the transfer of the Micro LED bare chip to form a Micro LED array substrate.
  • the receiving substrate is a silicon substrate that has been prepared in advance to form a circuit pattern, which may be Flexibility can also be rigid.
  • An object of the present invention is to provide a package structure of a micro light-emitting diode array substrate, which can protect a micro light-emitting diode and a substrate driven therewith, and can improve the light-emitting effect of the micro light-emitting diode array substrate.
  • the present invention provides a package structure of a micro light emitting diode array substrate, including a substrate, a micro light emitting diode array disposed on the substrate, and a substrate disposed above the substrate and covering the micro light emitting diode array.
  • the protective layer ;
  • the micro light emitting diode array includes a plurality of micro light emitting diodes arranged in an array
  • a plurality of grooves are disposed on the upper surface of the substrate or on the lower surface of the protective layer, and the plurality of micro light emitting diodes are received in the plurality of grooves.
  • the plurality of grooves are disposed on an upper surface of the substrate, and the protective layer is a plate of glass or plastic material, and the protective layer has a thickness greater than 1 mm.
  • the package structure of the micro-light-emitting diode array substrate further includes a plurality of support columns disposed between the substrate and the protective layer, wherein the plurality of support columns are disposed on the substrate, The protective layer is supported.
  • the plurality of grooves are disposed on an upper surface of the substrate, and the protective layer is an organic film layer formed on the substrate by a coating process.
  • the plurality of grooves are disposed in one-to-one correspondence with the plurality of micro-light-emitting diodes, and the depth of each groove is greater than the height of the micro-light-emitting diodes disposed therein.
  • a reflective layer is disposed on the groove wall of each groove.
  • the plurality of grooves are disposed on a lower surface of the protective layer, and the protective layer is a plate of glass or plastic material, and the protective layer has a thickness greater than 1 mm.
  • the plurality of grooves are formed on the lower surface of the protective layer by laser drilling or embossing;
  • the side wall of the groove is arcuate, and the groove of the groove is circular or elliptical.
  • Each groove corresponds to one or more micro light emitting diodes.
  • the substrate is a TFT array substrate.
  • the present invention also provides a package structure of a micro-light-emitting diode array substrate, comprising a substrate, a micro-light-emitting diode array disposed on the substrate, and a protective layer disposed above the substrate and covering the micro-light-emitting diode array;
  • the micro light emitting diode array includes a plurality of micro light emitting diodes arranged in an array
  • a plurality of grooves are disposed on the upper surface of the substrate or on the lower surface of the protective layer, and the plurality of micro light-emitting diodes are received in the plurality of grooves;
  • the protective layer is a plate of glass or plastic material, and the thickness of the protective layer is greater than 1 mm;
  • the substrate is a TFT array substrate.
  • the present invention provides a package structure of a micro-light-emitting diode array substrate, comprising a substrate, a micro-light-emitting diode array disposed on the substrate, and disposed above the substrate and covering the micro-light-emitting diode array a protective layer;
  • the micro-light emitting diode array includes a plurality of micro-light emitting diodes arranged in an array; a plurality of grooves are provided on an upper surface of the substrate or a lower surface of the protective layer, and the plurality of micro-lights
  • the diode is accommodated in the plurality of grooves; the micro light emitting diode and the substrate under which the micro light emitting diode is driven can be protected, and the light emitting effect of the micro light emitting diode array substrate can be improved.
  • FIG. 1 is a schematic view showing a first embodiment of a package structure of a micro LED array substrate according to the present invention
  • FIG. 2 is a schematic view showing a second embodiment of a package structure of a micro LED array substrate according to the present invention.
  • FIG. 3 is a schematic view showing a third embodiment of a package structure of a micro LED array substrate according to the present invention.
  • FIG. 4 is a schematic view showing a fourth embodiment of a package structure of a micro LED array substrate according to the present invention.
  • FIG. 5 is a schematic view showing the arrangement of a plurality of grooves on a protective layer in a fourth embodiment of a package structure of a micro LED array substrate according to the present invention
  • FIG. 6 is a schematic view showing a fifth embodiment of a package structure of a micro LED array substrate according to the present invention.
  • FIG. 1 is a schematic diagram of a first embodiment of a package structure of a micro LED array substrate according to the present invention.
  • a package structure of the micro LED array substrate includes a substrate 1 disposed on the substrate. a micro-light-emitting diode array 3 on the first, and a protective layer 2 disposed above the substrate 1 and covering the micro-light-emitting diode array 3;
  • the micro light emitting diode array 3 includes a plurality of arrays of micro light emitting diodes 31;
  • the upper surface of the substrate 1 is provided with a plurality of grooves 51, and the plurality of micro-light-emitting diodes 31 are accommodated in the plurality of grooves 51.
  • the protective layer 2 may be a glass plate, a plastic plate, or a plate of other materials, and the protective layer 2 functions as a package cover; for example, the protective layer 2 It is a sheet of polyethylene terephthalate (PET), polycarbonate (PC), or polymethacrylate (PMA).
  • PET polyethylene terephthalate
  • PC polycarbonate
  • PMA polymethacrylate
  • the protective layer 2 has a thickness greater than 1 mm.
  • a reflective layer 52 is disposed on the groove wall of each of the grooves 51, and the light emitted from the micro-light-emitting diodes 31 is reflected, so that the light-emitting efficiency of the micro-light-emitting diode array substrate can be effectively improved.
  • the plurality of grooves 51 are disposed in one-to-one correspondence with the plurality of micro-light-emitting diodes 31.
  • each of the grooves 51 is greater than the height of the micro-light-emitting diodes 31 disposed therein, that is, each micro-light-emitting diode 31 is completely trapped in the corresponding groove 51, thereby facilitating the setting of the protective layer 2
  • the substrate 1 is packaged on the micro light emitting diode array substrate.
  • the substrate 1 is a TFT array substrate, and the micro light emitting diode array 3 is driven thereon, so that the micro light emitting diode array substrate can be further used to fabricate a micro light emitting diode display after being packaged.
  • FIG. 2 is a schematic diagram of a second embodiment of a package structure of a micro-light-emitting diode array substrate according to the present invention.
  • the package structure of the micro-light-emitting diode array substrate is further A plurality of support columns 41 disposed between the substrate 1 and the protective layer 2 are disposed.
  • the plurality of support columns 41 are disposed on the substrate 1 to support the protective layer 2 .
  • Other technical features are the same as those of the first embodiment described above, and details are not described herein again.
  • FIG. 3 is a schematic diagram of a third embodiment of a package structure of a micro LED array substrate according to the present embodiment.
  • the protective layer 2 is formed by a coating process.
  • the organic film layer on the substrate 1, for example, the protective layer 2 is a film layer of a soluble polytetrafluoroethylene (PFA) material, which is formed on the substrate 1 by a coating and curing process.
  • PFA soluble polytetrafluoroethylene
  • the thickness of the protective layer 2 only needs to cover the plurality of micro-light-emitting diodes 31, and the thickness thereof is not specifically limited.
  • Other technical features are the same as those of the first embodiment described above, and details are not described herein again.
  • FIG. 4 is a schematic view showing a fourth embodiment of a package structure of a micro LED array substrate according to the present embodiment.
  • the plurality of grooves 51 are disposed on the protective layer. 2 on the lower surface.
  • the sidewall of the groove 51 is arcuate, and the notch of the groove 51 may be circular, or elliptical, etc., due to the protective layer of glass or plastic material.
  • a medium for example, air
  • the plurality of grooves 51 are formed on the lower surface of the protective layer 2 by laser drilling or embossing.
  • the plurality of grooves 51 are disposed on the lower surface of the protective layer 2 corresponding to the plurality of micro light-emitting diodes 31 in an array, and the grooves are 51, according to the aperture is larger than the length of the micro-light-emitting diode 31, each groove 51 can cover one or more micro-light-emitting diodes 31; in this embodiment, each groove 51 corresponds to a micro-lighting Diode 31.
  • Other technical features are the same as those of the fourth embodiment described above, and are not described herein again.
  • FIG. 6 is a schematic diagram of a fifth embodiment of a package structure of a micro-light-emitting diode array substrate according to the present invention.
  • each groove 51 corresponds to two micro-covers.
  • the light-emitting diodes 31, correspondingly, are arranged such that their apertures are larger than the length of the two micro-light-emitting diodes 31.
  • Other technical features are the same as those of the fourth embodiment described above, and are not described herein again.
  • the present invention provides a package structure of a micro-light-emitting diode array substrate, including a substrate, a micro-light-emitting diode array disposed on the substrate, and a substrate disposed above the substrate and covering the micro-light-emitting diode array.
  • the micro-light emitting diode array includes a plurality of micro-light emitting diodes arranged in an array; a plurality of grooves are disposed on an upper surface of the substrate or a lower surface of the protective layer, and the plurality of micro-light emitting diodes It is accommodated in the plurality of grooves; the micro light emitting diode and the substrate under which the micro light emitting diode is driven can be protected, and the light emitting effect of the micro light emitting diode array substrate can be improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种微发光二极管阵列基板的封装结构，包括基板（1）、设于所述基板（1）上的微发光二极管阵列（3）、设于所述基板（1）上方并覆盖所述微发光二极管阵列（3）的保护层（2）；所述微发光二极管阵列（3）包括数个阵列排布的微发光二极管（31）；所述基板（1）的上表面上、或所述保护层（2）的下表面上设有数个凹槽（51），所述数个微发光二极管（31）容置于所述数个凹槽（51）中；能够保护微发光二极管（31）及其下方对其进行驱动的基板（1），并能够改善微发光二极管阵列基板的发光效果。

Description

微发光二极管阵列基板的封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管阵列基板的封装结构。
背景技术
微发光二极管(Micro LED)是一种尺寸在几微米到几百微米之间的器件，由于其较普通LED的尺寸要小很多，从而使得单一的LED作为像素(Pixel)用于显示成为可能，Micro LED显示器便是一种以高密度的Micro LED阵列作为显示像素阵列来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比于OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
由于晶格匹配的原因，Micro LED器件必须先在蓝宝石类的供给基板上通过分子束外延的方法生长出来，随后通过激光剥离(Laser lift-off，LLO)技术将微发光二极管裸芯片(bare chip)从供给基板上分离开，然后通过微转印(Micro Transfer Print，NTP)技术将其转移到已经预先制备完成电路图案的接受基板上，形成Micro LED阵列，进而做成Micro LED显示面板。其中，微转印的基本原理大致为：使用具有图案化的传送头(Transfer head)，例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)类传送头，通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来，然后将PDMS传送头与接受基板进行对位，随后将PDMS传送头所吸附的Micro LED bare chip贴附到接受基板预设的位置上，再将PDMS传送头从接受基板上剥离，即可完成Micro LED bare chip的转移，形成Micro LED阵列基板，进一步地，所述接受基板是已经预先制备完成电路图案的硅基板，其可以为柔性也可以为刚性。
在现有Micro LED显示面板的制作过程中，为了保护Micro LED及其下方的驱动基板，并改善Micro LED阵列的发光效果，提出一种新的Micro LED阵列基板的封装结构，是本领域亟需解决的技术问题之一。
发明内容
本发明的目的在于提供一种微发光二极管阵列基板的封装结构，能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
为实现上述目的，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；
所述微发光二极管阵列包括数个阵列排布的微发光二极管；
所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中。
可选地，所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。
可选地，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板与所述保护层之间的数个支撑柱，所述数个支撑柱设于所述基板上，以对所述保护层进行支撑。
可选地，所述数个凹槽设于所述基板的上表面上，所述保护层为通过涂布工艺形成在所述基板上的有机膜层。
所述数个凹槽与所述数个微发光二极管一一对应设置，每一凹槽的深度大于其内容置的微发光二极管的高度。
每一凹槽的槽壁上均设有反射层。
可选地，所述数个凹槽设于所述保护层的下表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。
所述数个凹槽通过激光打孔、或压印的方式形成于所述保护层的下表面上；
所述凹槽的侧壁为弧面状，所述凹槽的槽口为圆形、或椭圆形。
每一凹槽对应覆盖一个或多个微发光二极管。
所述基板为TFT阵列基板。
本发明还提供一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；
所述微发光二极管阵列包括数个阵列排布的微发光二极管；
所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；
其中，所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm；
其中，所述基板为TFT阵列基板。
本发明的有益效果：本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图；
图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图；
图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图；
图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图；
图5为本发明微发光二极管阵列基板的封装结构第四实施例中数个凹槽在保护层上的排布示意图；
图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，图1为本发明微发光二极管阵列基板的封装结构第一实施例的示意图，在本实施例中，所述微发光二极管阵列基板的封装结构包括基板1、设于所述基板1上的微发光二极管阵列3、设于所述基板1上方并覆盖所述微发光二极管阵列3的保护层2；
所述微发光二极管阵列3包括数个阵列排布的微发光二极管31；
所述基板1的上表面上设有数个凹槽51，所述数个微发光二极管31容置于所述数个凹槽51中。
具体地，本实施例中，所述保护层2可以为玻璃(Glass)板、塑料板、或其他材质的板材，所述保护层2起到封装盖板的作用；例如，所述保护层2为聚对苯二甲酸乙二酯(PET)、聚碳酸酯(PC)、或聚甲基丙烯酸酯(PMA)等板材。
优选地，所述保护层2的厚度大于1mm。
具体地，每一凹槽51的槽壁上均设有反射层52，通过对微发光二极管31发出的光进行反射，从而可以有效提高微发光二极管阵列基板的光出射效率。
具体地，所述数个凹槽51与所述数个微发光二极管31一一对应设置。
优选地，每一凹槽51的深度大于其内容置的微发光二极管31的高度，即每一微发光二极管31均完全陷入在对应的凹槽51内，从而有利于所述保护层2设置在所述基板1上，以对微发光二极管阵列基板进行封装。
具体地，所述基板1为TFT阵列基板，以对其上的微发光二极管阵列3进行驱动，从而所述微发光二极管阵列基板进行封装后，可进一步用于制作微发光二极管显示器。
请参阅图2，图2为本发明微发光二极管阵列基板的封装结构第二实施例的示意图，本实施例与上述第一实施例相比，所述的微发光二极管阵列基板的封装结构，还包括设于所述基板1与所述保护层2之间的数个支撑柱41，所述数个支撑柱41设于所述基板1上，以对所述保护层2进行支撑。其它技术特征均与上述第一实施例相同，在此不再赘述
请参阅图3，图3为本发明微发光二极管阵列基板的封装结构第三实施例的示意图，本实施例与上述第一实施例相比，所述保护层2为通过涂布工艺形成在所述基板1上的有机膜层，例如，所述保护层2为可溶性聚四氟乙烯(PFA)材料的膜层，其通过涂布及固化工艺形成在所述基板1上。
具体地，在本实施例中，所述保护层2的厚度只需满足覆盖住所述数个微发光二极管31即可，对其厚度没有明确限制。其它技术特征均与上述第一实施例相同，在此不再赘述
请参阅图4，图4为本发明微发光二极管阵列基板的封装结构第四实施例的示意图，本实施例与上述第一实施例相比，所述数个凹槽51设于所述保护层2的下表面上。
具体地，本实施例中，所述凹槽51的侧壁为弧面状，所述凹槽51的槽口可以为圆形、或椭圆形等形状，由于玻璃、或塑料材料的保护层2与凹槽51内的介质(例如空气)存在折射率的差异，从而所述凹槽52可以对其覆盖的微发光二极管31发出的光产生聚光的效果，进而可适当提高微 发光二极管阵列基板的光出射效率。
具体地，所述数个凹槽51通过激光打孔、或压印的方式形成于所述保护层2的下表面上。
具体地，如图5所示，所述数个凹槽51与所述数个微发光二极管31对应的按照阵列排布的方式设于所述保护层2的下表面上，且所述凹槽51按照其孔径大于所述微发光二极管31的长度进行设置，每一凹槽51可对应覆盖一个或多个微发光二极管31；具体在本实施例中，每一凹槽51对应覆盖一个微发光二极管31。其它技术特征均与上述第四实施例相同，在此不再赘述。
请参阅图6，图6为本发明微发光二极管阵列基板的封装结构第五实施例的示意图，本实施例与上述第四实施例相比，具体地，每一凹槽51对应覆盖两个微发光二极管31，相应地，所述凹槽51按照其孔径大于两个微发光二极管31的长度进行设置。其它技术特征均与上述第四实施例相同，在此不再赘述。
综上所述，本发明提供了一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；所述微发光二极管阵列包括数个阵列排布的微发光二极管；所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；能够保护微发光二极管及其下方对其进行驱动的基板，并能够改善微发光二极管阵列基板的发光效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种微发光二极管阵列基板的封装结构，包括基板、设于所述基板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；
    所述微发光二极管阵列包括数个阵列排布的微发光二极管；
    所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中。
  2. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。
  3. 如权利要求2所述的微发光二极管阵列基板的封装结构，还包括设于所述基板与所述保护层之间的数个支撑柱，所述数个支撑柱设于所述基板上，以对所述保护层进行支撑。
  4. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述数个凹槽设于所述基板的上表面上，所述保护层为通过涂布工艺形成在所述基板上的有机膜层。
  5. 如权利要求2所述的微发光二极管阵列基板的封装结构，其中，所述数个凹槽与所述数个微发光二极管一一对应设置，每一凹槽的深度大于其内容置的微发光二极管的高度。
  6. 如权利要求2所述的微发光二极管阵列基板的封装结构，其中，每一凹槽的槽壁上均设有反射层。
  7. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述数个凹槽设于所述保护层的下表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm。
  8. 如权利要求7所述的微发光二极管阵列基板的封装结构，其中，所述数个凹槽通过激光打孔、或压印的方式形成于所述保护层的下表面上；
    所述凹槽的侧壁为弧面状，所述凹槽的槽口为圆形、或椭圆形。
  9. 如权利要求7所述的微发光二极管阵列基板的封装结构，其中，每一凹槽对应覆盖一个或多个微发光二极管。
  10. 如权利要求1所述的微发光二极管阵列基板的封装结构，其中，所述基板为TFT阵列基板。
  11. 一种微发光二极管阵列基板的封装结构，包括基板、设于所述基 板上的微发光二极管阵列、设于所述基板上方并覆盖所述微发光二极管阵列的保护层；
    所述微发光二极管阵列包括数个阵列排布的微发光二极管；
    所述基板的上表面上、或所述保护层的下表面上设有数个凹槽，所述数个微发光二极管容置于所述数个凹槽中；
    其中，所述数个凹槽设于所述基板的上表面上，所述保护层为玻璃、或塑料材料的板材，所述保护层的厚度大于1mm；
    其中，所述基板为TFT阵列基板。
  12. 如权利要求11所述的微发光二极管阵列基板的封装结构，还包括设于所述基板与所述保护层之间的数个支撑柱，所述数个支撑柱设于所述基板上，以对所述保护层进行支撑。
  13. 如权利要求11所述的微发光二极管阵列基板的封装结构，其中，所述数个凹槽与所述数个微发光二极管一一对应设置，每一凹槽的深度大于其内容置的微发光二极管的高度。
  14. 如权利要求11所述的微发光二极管阵列基板的封装结构，其中，每一凹槽的槽壁上均设有反射层。
PCT/CN2017/089084 2017-05-23 2017-06-20 微发光二极管阵列基板的封装结构 WO2018214193A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/548,094 US20180342654A1 (en) 2017-05-23 2017-06-20 Encapsulation structure of micro light-emitting diode array substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710370182.5 2017-05-23
CN201710370182.5A CN107170772A (zh) 2017-05-23 2017-05-23 微发光二极管阵列基板的封装结构

Publications (1)

Publication Number Publication Date
WO2018214193A1 true WO2018214193A1 (zh) 2018-11-29

Family

ID=59820531

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/089084 WO2018214193A1 (zh) 2017-05-23 2017-06-20 微发光二极管阵列基板的封装结构

Country Status (3)

Country Link
US (1) US20180342654A1 (zh)
CN (1) CN107170772A (zh)
WO (1) WO2018214193A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017124319A1 (de) * 2017-10-18 2019-04-18 Osram Opto Semiconductors Gmbh Halbleiterbauteil
CN108565348A (zh) * 2017-12-22 2018-09-21 张家港康得新光电材料有限公司 发光结构、其制作方法以及发光器件
JP6952203B2 (ja) 2018-03-13 2021-10-20 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 直接式バックライトユニットを有するディスプレイ
TWI662335B (zh) * 2018-03-22 2019-06-11 友達光電股份有限公司 發光裝置與使用其之背光模組
CN108461438A (zh) * 2018-04-03 2018-08-28 泉州市盛维电子科技有限公司 一种微型发光二极管的巨量转移装置及转移方法
CN109031784A (zh) 2018-08-23 2018-12-18 厦门天马微电子有限公司 Led背光源及背光源模组和显示装置
CN111261653B (zh) * 2018-11-30 2023-08-01 成都辰显光电有限公司 微型发光二极管、显示面板及其转移方法
TWI712844B (zh) * 2019-07-03 2020-12-11 友達光電股份有限公司 元件基板及其製造方法
WO2021104494A1 (zh) * 2019-11-29 2021-06-03 海信视像科技股份有限公司 一种显示装置
CN114746927A (zh) * 2019-11-29 2022-07-12 京瓷株式会社 显示装置
CN113497072B (zh) * 2020-03-18 2022-12-09 重庆康佳光电技术研究院有限公司 一种便于修复的led显示器及其修复方法
CN113376886B (zh) * 2021-06-30 2022-12-06 武汉华星光电技术有限公司 显示面板、生物检测方法及显示装置
CN113851572A (zh) * 2021-09-24 2021-12-28 宁波升谱光电股份有限公司 一种led器件及其制作方法
CN114188466B (zh) * 2021-12-03 2023-11-28 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1589074A (zh) * 2004-07-01 2005-03-02 友达光电股份有限公司 具有缓冲层的有机电激光发光二极管面板模组
CN101246880A (zh) * 2007-02-16 2008-08-20 探微科技股份有限公司 具有硅质载板的发光二极管阵列封装结构与其制作方法
US20120049235A1 (en) * 2010-08-24 2012-03-01 Au Optronics Corporation Organic Light Emitting Diode Packaging Structure and Manufacturing Method Thereof
CN102709479A (zh) * 2011-05-06 2012-10-03 京东方科技集团股份有限公司 Oled器件的封装结构及封装方法
CN104505465A (zh) * 2014-12-04 2015-04-08 深圳市华星光电技术有限公司 Oled封装结构及其封装方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110080514A (ko) * 2010-01-06 2011-07-13 엘지이노텍 주식회사 백라이트 유닛 및 이를 이용한 디스플레이 장치
US9261638B2 (en) * 2010-06-07 2016-02-16 Ubright Optronics Corporation Light guide film
TWI529459B (zh) * 2010-06-15 2016-04-11 Ｌｇ伊諾特股份有限公司 背光單元及具有其之顯示裝置
KR20140089014A (ko) * 2012-12-31 2014-07-14 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US9111464B2 (en) * 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9825202B2 (en) * 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
WO2017010387A1 (ja) * 2015-07-13 2017-01-19 シャープ株式会社 照明装置および表示装置
WO2017051845A1 (ja) * 2015-09-24 2017-03-30 シャープ株式会社 照明装置、表示装置及びテレビ受信装置
JP2017062941A (ja) * 2015-09-25 2017-03-30 ソニー株式会社 表示装置及びその製造方法
US10066819B2 (en) * 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
JP2017162940A (ja) * 2016-03-08 2017-09-14 パナソニックＩｐマネジメント株式会社 発光装置及び照明装置
US20180210195A1 (en) * 2017-01-24 2018-07-26 Microsoft Technology Licensing, Llc Avoiding ghost images

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1589074A (zh) * 2004-07-01 2005-03-02 友达光电股份有限公司 具有缓冲层的有机电激光发光二极管面板模组
CN101246880A (zh) * 2007-02-16 2008-08-20 探微科技股份有限公司 具有硅质载板的发光二极管阵列封装结构与其制作方法
US20120049235A1 (en) * 2010-08-24 2012-03-01 Au Optronics Corporation Organic Light Emitting Diode Packaging Structure and Manufacturing Method Thereof
CN102709479A (zh) * 2011-05-06 2012-10-03 京东方科技集团股份有限公司 Oled器件的封装结构及封装方法
CN104505465A (zh) * 2014-12-04 2015-04-08 深圳市华星光电技术有限公司 Oled封装结构及其封装方法

Also Published As

Publication number Publication date
CN107170772A (zh) 2017-09-15
US20180342654A1 (en) 2018-11-29

Similar Documents

Publication Publication Date Title
WO2018214193A1 (zh) 微发光二极管阵列基板的封装结构
WO2017219413A1 (zh) 微发光二极管显示面板
US10153188B1 (en) Micro transfer printing method
WO2018214192A1 (zh) 微发光二极管阵列基板的封装结构及其封装方法
JP6069479B2 (ja) Ｌｅｄディスプレイ及びその製造方法
CN106229326B (zh) 转印微发光二极管的方法及显示面板的制作方法
US9297946B2 (en) Display device and method of manufacturing the same
US20180357948A1 (en) Micro led color display device
TW200703710A (en) Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
TW200729559A (en) High luminance light emitting diode and liquid crystal display device using the same
EP1852921A3 (en) Donor substrate for a flat panel display and method of fabricating an organic light emitting diode (OLED) display using the same
TW200514281A (en) Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2011504641A5 (zh)
TW201926630A (zh) 半導體結構、發光裝置及其製造方法
JP2011086527A (ja) Ｅｌ素子、照明装置及びディスプレイ装置
JP2009146654A (ja) 面光源装置及びその製造方法
TW200505062A (en) Light-emitting diode
TW200638794A (en) Display device
JP2007329374A5 (zh)
CN1967899B (zh) 有机电致发光显示元件及其制造方法
WO2009050623A3 (en) Side-emitting led light source for backlighting applications
WO2008022064A3 (en) Led light recycling device
JP2010123322A (ja) 面光源素子およびそれを備えた表示装置
TWI688076B (zh) 用於轉移顯示器像素之圖案膜及使用彼來製造顯示器的方法
JP2010218839A (ja) Ｅｌ素子、液晶ディスプレイ用バックライト装置、照明装置、電子看板装置、ディスプレイ装置及び光取り出しフィルム

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15548094

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17910805

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17910805

Country of ref document: EP

Kind code of ref document: A1