TWI724407B - 微型發光二極體顯示面板及其製備方法 - Google Patents

微型發光二極體顯示面板及其製備方法 Download PDF

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TWI724407B
TWI724407B TW108112567A TW108112567A TWI724407B TW I724407 B TWI724407 B TW I724407B TW 108112567 A TW108112567 A TW 108112567A TW 108112567 A TW108112567 A TW 108112567A TW I724407 B TWI724407 B TW I724407B
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layer
thin film
film transistor
conductive
emitting diode
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TW201944461A (zh
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張煒熾
李國勝
賴寵文
陳柏輔
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鴻海精密工業股份有限公司
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Abstract

一種微型發光二極體(Micro LED)顯示面板的製備方法，包括：提供一設置有Micro LED的承載基板，Micro LED設置有第一電極；提供一包括控制電路的薄膜電晶體(TFT)基板，於TFT基板上依次形成導電連接件、絕緣層、以及接觸電極層；圖案化絕緣層及接觸電極層，以形成貫穿接觸電極層及絕緣層暴露導電連接件的通孔；將第一電極抵持接觸電極層，並藉由控制電路給接觸電極層施加參考電壓，給導電連接件施加不同於參考電壓的電壓；使Micro LED及其第一電極轉移至TFT基板上；以及使第一電極與導電連接件結合。還提供利用上述方法製備的Micro LED顯示面板。

Description

微型發光二極體顯示面板及其製備方法
本發明涉及顯示技術領域，尤其涉及一種微型發光二極體顯示面板及其製備方法。
一般，微型發光二極體(Micro Light Emitting Diode)顯示面板的製備通常包括：將承載基板上的微型發光二極體轉移至薄膜電晶體(Thin Film Transistor，TFT)基板上的步驟。然，由於微型發光二極體的尺寸非常小(例如寬度不超過100微米)，導致微型發光二極體的轉移精度要求非常嚴苛，進而使得微型發光二極體顯示面板的加工精度要求很高，製備流程複雜。
本發明提供一種微型發光二極體顯示面板的製備方法，其包括以下步驟：提供一承載基板，所述承載基板上設置有微型發光二極體，所述微型發光二極體的遠離所述承載基板的一端設置有第一電極； 提供一薄膜電晶體基板，所述薄膜電晶體基板包括控制電路，於所述薄膜電晶體基板上依次形成導電連接件、覆蓋所述導電連接件的絕緣層、以及設置於所述絕緣層遠離所述薄膜電晶體基板的一側的接觸電極層，所述導電連接件電性連接所述控制電路，所述接觸電極層穿過所述絕緣層以電性連接所述控制電路；同時圖案化所述絕緣層及所述接觸電極層，以形成貫穿所述接觸電極層及所述絕緣層的通孔，所述通孔暴露所述導電連接件；將所述微型發光二極體的第一電極抵持所述接觸電極，並藉由所述控制電路給所述接觸電極層施加參考電壓，藉由所述控制電路給所述導電連接件施加不同於所述參考電壓的電壓，進而使所述微型發光二極體的第一電極及所述導電連接件之間形成靜電吸附；使所述微型發光二極體及其第一電極脫離所述承載基板，並轉移至所述薄膜電晶體基板上；以及處理所述導電連接件，以使所述微型發光二極體的第一電極與所述導電連接件結合。
本發明微型發光二極體顯示面板的製備方法，同時圖案化所述絕緣層及所述接觸電極層，簡化了製備流程。另，同時圖案化所述絕緣層及所述接觸電極層的步驟中形成了貫穿所述接觸電極層及所述絕緣層的通孔，使得所述微型發光二極體的第一電極抵持所述接觸電極時的轉移精度要求降低。
10:承載基板
11:基底
12:黏膠層
20:微型發光二極體
21:P型摻雜的無機發光材料層
22:活性層
23:N型摻雜的無機發光材料層
24:保護層
25:第一電極
26:第二電極
50:薄膜電晶體基板
51:控制電路
60:數據線
70:掃描線
C:存儲電容
a:第一端
b:第二端
M1:第一薄膜電晶體
M2:第二薄膜電晶體
M3:第三薄膜電晶體
52:導電連接件
521:導電基底層
5211:第一部分
5212:第二部分
522:導電屏障層
523:導電熔接層
53:絕緣層
531:接觸孔
54:接觸電極層
541:接觸電極
55:通孔
圖1為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S1的剖面示意圖。
圖2為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S2的剖面示意圖。
圖3為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S3的剖面示意圖。
圖4為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S4的剖面示意圖。
圖5為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S5的剖面示意圖。
圖6為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S6的剖面示意圖。
圖7為本發明實施例的微型發光二極體顯示面板的製備方法之步驟S7以及步驟S8的剖面示意圖。
附圖中示出了本發明的實施例，本發明可以藉由多種不同形式實現，而並不應解釋為僅局限於這裡所闡述的實施例。相反，提供這些實施例是為了使本發明更為全面及完整的公開，並使本領域的技術人員更充分地瞭解本發明的範圍。為了清晰可見，在圖中，層及區域的尺寸被放大了。
本申請中的“微型發光二極體”是指尺寸大約在1微米到100微米的範圍的發光二極體，更確切地說，是指尺寸小於100微米的發光二極體。
本發明實施例提供的微型發光二極體顯示面板的製備方法，包括以下步驟：
步驟S1：如圖1所示，提供一承載基板10，承載基板10上設置有微型發光二極體20，微型發光二極體20的遠離承載基板10的一端設置有第一電極25。
如圖1所示，承載基板10包括基底11、以及設置於基底11的一表面的黏膠層12。複數間隔設置的微型發光二極體20嵌設於黏膠層12中。黏膠層12的材質為在紫外光照或加熱狀態下可以分解進而失去黏性的一類膠體。
如圖1所示，每一微型發光二極體20包括依次層疊設置的P型摻雜的無機發光材料層21、活性層22、N型摻雜的無機發光材料層23。活性層22位於P型摻雜的無機發光材料層21及N型摻雜的無機發光材料層23之間。微型發光二極體20的靠近承載基板10的一端設置有第二電極26。N型摻雜的無機發光材料層23電性連接第二電極26，P型摻雜的無機發光材料層21電性連接第一電極25。
於一實施例中，微型發光二極體20的外部還設置有保護層24，保護層24包裹微型發光二極體20的側面並暴露出第一電極25及第二電極26。保護層24的材質可以為矽的氧化物。
步驟S2：如圖2所示，提供一薄膜電晶體基板50，薄膜電晶體基板50包括控制電路51，於薄膜電晶體基板50上形成電性連接控制電路51的導電連接件52。
於一實施例中，控制電路51包括複數資料線60(圖中僅示意性地示出一條)、複數掃描線70(圖中僅示意性地示出一條)、複數存儲電容C(圖 中僅示意性地示出一個)、複數第一薄膜電晶體M1(圖中僅示意性地示出一個)、複數第二薄膜電晶體M2(圖中僅示意性地示出一個)、以及複數第三薄膜電晶體M3(圖中僅示意性地示出一個)。其中，複數資料線60沿第一方向(圖未示)延伸，複數掃描線70沿與第一方向交叉的第二方向(圖未示)延伸，相鄰的兩條掃描線70及相鄰的兩條數據線60交叉定義一子畫素單元(圖未示)。每一子畫素單元對應一個微型發光二極體20。薄膜電晶體基板50藉由控制電路51以驅動微型發光二極體20發光。
圖2中僅示意性地示出一個子畫素單元的等效電路圖。如圖2所示，每一子畫素單元中包括一個存儲電容C、一個第一薄膜電晶體M1、一個第二薄膜電晶體M2、以及一個第三薄膜電晶體M3。存儲電容C包括第一端a及電性連接電源電壓Vdd的第二端b。第一薄膜電晶體M1包括電性連接資料線60的源極、電性連接掃描線70的閘極、以及電性連接存儲電容C的第一端a的汲極。第二薄膜電晶體M2包括電性連接電源電壓Vdd的源極、電性連接存儲電容C的第一端a的閘極、以及電性連接導電連接件52的汲極。第三薄膜電晶體M3包括電性連接參考電壓Vref的源極、電性連接控制電壓V-off的閘極、以及電性連接導電連接件52的汲極。其中，電源電壓Vdd不同於參考電壓Vref。
於一實施例中，薄膜電晶體基板50上形成有間隔設置的複數導電連接件52(圖中僅示意性地示出一個)。每一個導電連接件52對應一個微型發光二極體20並用於後續電性連接微型發光二極體20的第一電極25。導電連接件52包括位於薄膜電晶體基板50上的導電熔接層523。
如圖2所示，導電連接件52還包括設置於薄膜電晶體基板50上的導電基底層521以及設置於導電基底層521遠離薄膜電晶體基板50的一側的導 電屏障層522。導電屏障層522位於導電基底層521及導電熔接層523之間，以用於抑制導電熔接層523中的原子擴散至導電基底層521。
於一實施例中，導電基底層521包括間隔且絕緣設置的第一部分5211及第二部分5212。導電屏障層522及導電熔接層523依次層疊於導電基底層521的第一部分5211，導電基底層521的第二部分5212遠離薄膜電晶體基板50的一側未被導電屏障層522及導電熔接層523覆蓋。第二薄膜電晶體M2的汲極電性連接導電基底層521的第一部分5211。第三薄膜電晶體M3的汲極電性連接導電基底層521的第二部分5212。
於一實施例中，導電基底層521的材質可為氧化銦錫。導電熔接層523的材質可為錫。導電屏障層522的材質可為金屬鎳或金。導電屏障層522用於防止導電熔接層523的原子擴散到導電基底層521。導電基底層521用於將微型發光二極體20發出的光線向遠離薄膜電晶體基板50的一側反射，進而提高微型發光二極體顯示面板的出光效率。
步驟S3：如圖3所示，於薄膜電晶體基板50上形成覆蓋導電連接件52的絕緣層53。
如圖3所示，絕緣層53具有暴露導電基底層521的第二部分5212的接觸孔531。於一實施例中，絕緣層53的材質可為矽的氧化物。
步驟S4：如圖4所示，於絕緣層53遠離薄膜電晶體基板50的一側形成接觸電極層54，接觸電極層54穿過絕緣層53以電性連接控制電路51。
如圖4所示，接觸電極層54填充接觸孔531，並藉由導電基底層521的第二部分5212電性連接控制電路51。
步驟S5：如圖5所示，同時圖案化絕緣層53及接觸電極層54，以形成貫穿接觸電極層54及絕緣層53的通孔55，通孔55暴露導電連接件52。
如圖5所示，通孔55暴露出部分導電熔接層523。
於一實施例中，接觸電極層54圖案化後形成絕緣間隔設置的複數接觸電極541(圖中僅示意性地示出一個)，每一個接觸電極541對應一個導電連接件52。
步驟S6：如圖6所示，將微型發光二極體20的第一電極25抵持接觸電極層54，並藉由控制電路51給接觸電極層54施加參考電壓Vref，藉由控制電路51給導電連接件52施加不同於參考電壓Vref的電源電壓Vdd，進而使微型發光二極體20的第一電極25及導電連接件52之間形成靜電吸附。
於一實施例中，每一個微型發光二極體20與一個導電連接件52對應。每一個微型發光二極體20的第一電極25抵持接觸電極層54中對應的一個接觸電極541。
如圖6所示，微型發光二極體20的第一電極25在薄膜電晶體基板50上的投影完全覆蓋通孔55在薄膜電晶體基板50上的投影。
由於通孔55完全貫穿接觸電極層54及絕緣層53，使得對應通孔55的位置處，絕緣層53的遠離薄膜電晶體基板50的表面完全被接觸電極層54覆蓋。是故，將微型發光二極體20的第一電極25抵持接觸電極層54的過程中，微型發光二極體20的第一電極25必然不會與位於接觸電極層54下方的絕緣層53接觸。藉此，降低了微型發光二極體20轉移至薄膜電晶體基板50的精度要求。
具體地，微型發光二極體20的第一電極25抵持接觸電極層54的同時，第三薄膜電晶體M3被開啟，以提供參考電壓Vref至接觸電極層54及微型發光二極體20的第一電極25；第一薄膜電晶體M1及第二薄膜電晶體M2亦被開啟，以提供電源電壓Vdd給導電連接件52。由於電源電壓Vdd不同於參考電壓Vref，使得微型發光二極體20的第一電極25及導電連接件52之間形成靜電吸附。
步驟S7：如圖7所示，使微型發光二極體20及其第一電極25脫離承載基板10，並轉移至薄膜電晶體基板50上。
於一實施例中，利用紫外光照射或加熱黏膠層12使其失去黏性，進而微型發光二極體20及其第一電極25脫離承載基板10，並由於微型發光二極體20的第一電極25及導電連接件52之間的靜電吸附，而轉移至薄膜電晶體基板50上。
步驟S8：如圖7所示，處理導電連接件52，以使微型發光二極體20的第一電極25與導電連接件52結合。
於一實施例中，加熱導電連接件52，以使導電熔接層523熔融，而與微型發光二極體20的第一電極25固化結合。
如圖7所示，第二薄膜電晶體M2的汲極及第三薄膜電晶體M3的汲極均電性連接微型發光二極體20的第一電極25。其中，第二薄膜電晶體M2的汲極藉由導電連接件52電性連接微型發光二極體20的第一電極25；第三薄膜電晶體M3的汲極藉由接觸電極層54電性連接微型發光二極體20的第一電極25。
於一實施例中，第三薄膜電晶體M3僅在微型發光二極體20轉移至薄膜電晶體基板50的過程中使用。在後續微型發光二極體顯示面板進行顯示時，每一個子畫素單元中，第三薄膜電晶體M3不工作，進而不會對微型發光二極體20的發光造成影響。例如，在微型發光二極體顯示面板進行顯示時，控制電路51藉由第一薄膜電晶體M1及第二薄膜電晶體M2向微型發光二極體20的第一電極25施加電源電壓Vdd，控制電路51向微型發光二極體20的第二電極26施加另一小於電源電壓Vdd的電壓，以使微型發光二極體20在該正向偏壓下發光。
本發明微型發光二極體顯示面板的製備方法，同時圖案化絕緣層53及接觸電極層54，簡化了製備流程。另，同時圖案化絕緣層53及接觸電極層54的步驟中形成了貫穿接觸電極層54及絕緣層53的通孔55，使得微型發光二極體20的第一電極25抵持接觸電極541時的轉移精度要求降低。
本發明實施例還提供一種採用上述方法製備的微型發光二極體顯示面板。該微型發光二極體顯示面板可以為手機、平板電腦、智慧手錶等。
以上實施方式僅用以說明本發明的技術方案而非限制，儘管參照較佳實施方式對本發明進行了詳細說明，本領域的普通技術人員應當理解，可以對本發明的技術方案進行修改或等同替換，而不脫離本發明技術方案的精神及範圍。
10:承載基板
11:基底
12:黏膠層
20:微型發光二極體
25:第一電極
50:薄膜電晶體基板
51:控制電路
C:存儲電容
M1:第一薄膜電晶體
M2:第二薄膜電晶體
M3:第三薄膜電晶體
52:導電連接件
521:導電基底層
522:導電屏障層
523:導電熔接層
53:絕緣層
54:接觸電極層
541:接觸電極
55:通孔

Claims (5)

  1. 一種微型發光二極體顯示面板的製備方法，其改良在於：包括以下步驟：提供一承載基板，所述承載基板上設置有微型發光二極體，所述微型發光二極體的遠離所述承載基板的一端設置有第一電極；提供一薄膜電晶體基板，所述薄膜電晶體基板包括控制電路，於所述薄膜電晶體基板上依次形成導電連接件、覆蓋所述導電連接件的絕緣層、以及設置於所述絕緣層遠離所述薄膜電晶體基板的一側的接觸電極層，所述導電連接件電性連接所述控制電路，所述接觸電極層穿過所述絕緣層以電性連接所述控制電路；同時圖案化所述絕緣層及所述接觸電極層，以形成貫穿所述接觸電極層及所述絕緣層的通孔，所述通孔暴露所述導電連接件；將所述微型發光二極體的第一電極抵持所述接觸電極層，並藉由所述控制電路給所述接觸電極層施加參考電壓，藉由所述控制電路給所述導電連接件施加不同於所述參考電壓的電壓，進而使所述微型發光二極體的第一電極及所述導電連接件之間形成靜電吸附；使所述微型發光二極體及其第一電極脫離所述承載基板，並轉移至所述薄膜電晶體基板上；以及處理所述導電連接件，以使所述微型發光二極體的第一電極與所述導電連接件結合； 其中，將所述微型發光二極體的第一電極抵持所述接觸電極層後，所述微型發光二極體的第一電極在所述薄膜電晶體基板上的投影完全覆蓋所述通孔在所述薄膜電晶體基板上的投影；其中，所述導電連接件包括設置於所述薄膜電晶體基板上的導電熔接層；所述導電連接件還包括設置於所述薄膜電晶體基板上的導電基底層、以及設置於所述導電基底層遠離所述薄膜電晶體基板的一側的導電屏障層，所述導電屏障層位於所述導電基底層及所述導電熔接層之間以用於抑制所述導電熔接層中的原料擴散至所述導電基底層；於所述薄膜電晶體基板上形成絕緣層的步驟中，所述絕緣層具有暴露所述導電基底層的接觸孔；於所述薄膜電晶體基板上形成接觸電極層的步驟中，所述接觸電極層填充所述接觸孔，並藉由所述導電基底層電性連接所述控制電路。
  2. 如請求項1所述的微型發光二極體顯示面板的製備方法，其中，所述承載基板包括基底、以及設置於所述基底的一表面的黏膠層，所述微型發光二極體嵌設於所述黏膠層中。
  3. 如請求項2所述的微型發光二極體顯示面板的製備方法，其中，使所述微型發光二極體及其第一電極脫離所述承載基板的方法為利用紫外光照射或加熱所述黏膠層使其失去黏性。
  4. 如請求項1所述的微型發光二極體顯示面板的製備方法，其中，處理所述導電連接件方法為加熱所述導電連接件，以使所述導電熔接層熔融。
  5. 如請求項1所述的微型發光二極體顯示面板的製備方法，其中，所述控制電路包括資料線、掃描線、存儲電容、第一薄膜電晶體、第二薄膜電晶體、以及第三薄膜電晶體；所述存儲電容包括第一端及電性連接所述電源電壓的第二端；所述第一薄膜電晶體包括電性連接所述資料線的源極、電性連接所述掃描線的閘極以及電性連接所述存儲電容的第一端的汲極；所述第二薄膜電晶體包括電性連接所述電源電壓的源極、電性連接所述存儲電容的第一端的閘極、以及電性連接所述導電連接件的汲極；以及所述第三薄膜電晶體包括電性連接所述參考電壓的源極、電性連接控制電壓的閘極、以及電性連接所述接觸電極層的汲極。
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