WO2021168615A1 - 发光二极管的巨量转移方法、以及显示背板组件 - Google Patents

发光二极管的巨量转移方法、以及显示背板组件 Download PDF

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Publication number
WO2021168615A1
WO2021168615A1 PCT/CN2020/076446 CN2020076446W WO2021168615A1 WO 2021168615 A1 WO2021168615 A1 WO 2021168615A1 CN 2020076446 W CN2020076446 W CN 2020076446W WO 2021168615 A1 WO2021168615 A1 WO 2021168615A1
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Prior art keywords
light
emitting diodes
adhesive layer
emitting diode
mass transfer
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PCT/CN2020/076446
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English (en)
French (fr)
Inventor
洪温振
许时渊
唐彪
李欣瞳
Original Assignee
重庆康佳光电技术研究院有限公司
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Priority to CN202080001302.4A priority Critical patent/CN111902952A/zh
Priority to PCT/CN2020/076446 priority patent/WO2021168615A1/zh
Priority to US17/377,420 priority patent/US20210343572A1/en
Publication of WO2021168615A1 publication Critical patent/WO2021168615A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to the technical field of micro-LEDs (Micro-LED), and in particular to a method for mass transfer of light-emitting diodes and a display backplane assembly.
  • Micro-LED that is, the miniaturization and matrix technology of light-emitting diodes, has good stability, longevity, and advantages in operating temperature. Miniature light-emitting diodes also inherit the advantages of light-emitting diodes such as low power consumption, high color saturation, fast response speed, and strong contrast. At the same time, miniature light-emitting diodes have the advantages of higher brightness and lower power consumption.
  • miniature light-emitting diodes will have great application prospects in the future, such as miniature light-emitting diode display screens.
  • the biggest bottleneck in the manufacture of miniature light-emitting diode displays is how to make them mass-produced.
  • the most effective way to achieve mass production is to achieve massive transfers.
  • the existing mass transfer method needs to transfer the red, blue, and green micro light-emitting diodes to the display backplane respectively, that is, three transfers, and the transfer process is cumbersome.
  • the heights of the micro light emitting diodes of different colors are different, and the micro light emitting diodes of different heights cause greater difficulty in the transfer process.
  • the invention provides a method for mass transfer of light-emitting diodes, which can transfer red, blue, and green miniature light-emitting diodes of different heights to a display backplane at one time, simplifying the transfer process and saving transfer time.
  • an embodiment of the present invention provides a method for mass transfer of light emitting diodes, and the method for mass transfer includes:
  • an embodiment of the present invention also provides a method for mass transfer of light-emitting diodes, and the method for mass transfer includes:
  • the light-emitting diodes on the temporary substrate are transferred to the display backplane.
  • an embodiment of the present invention provides a display backplane assembly, and the display backplane assembly includes:
  • LEDs of different colors arranged on the display backplane, the heights of the LEDs of different colors are different;
  • the mass transfer method for light-emitting diodes and the display backplane assembly described above by coating the light-emitting diodes of different colors with glue layers, make the light-emitting diodes of different colors form a flat layer on the side away from the temporary substrate, and the flat layer is far away
  • the height from one side of the temporary substrate to the temporary substrate is the same.
  • the transfer device is then used to transfer the light-emitting diodes to the display backplane, so that the light-emitting diodes of different heights and different colors can be transferred to the display backplane at one time.
  • FIG. 1 is a flow chart of the mass transfer of the light-emitting diode provided by the first embodiment of the present invention.
  • FIG. 2 is a flow chart of the mass transfer of the light emitting diode provided by the second embodiment of the present invention.
  • FIG. 3 is a schematic diagram of the mass transfer process of the light emitting diode provided by the first embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the mass transfer process of the light-emitting diode provided by the first embodiment and the second embodiment of the present invention
  • FIG. 5 is a schematic diagram of the mass transfer process of the light emitting diode provided by the first specific embodiment of the second embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the mass transfer process of the light emitting diode provided by the second embodiment of the second embodiment of the present invention.
  • FIG. 7 is a sub-flow chart of the mass transfer of the light emitting diode provided by the first embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the mass transfer sub-process of the light-emitting diode according to the first embodiment of the present invention.
  • FIG. 9 is a schematic diagram of the mass transfer sub-process of the light emitting diode provided by the first embodiment and the second embodiment of the present invention.
  • 10a and 10b are schematic diagrams of a display backplane assembly provided by an embodiment of the present invention.
  • FIG. 1 and FIG. 3 are a flow chart of the mass transfer of light-emitting diodes according to the first embodiment of the present invention and a schematic diagram of the mass transfer process of light-emitting diodes according to the first specific embodiment of the first embodiment of the present invention.
  • the method for mass transfer of light-emitting diodes specifically includes the following steps.
  • step S102 a number of temporary substrates 10 are provided, and each temporary substrate 10 is provided with a light-emitting diode 40 of one color. Specifically, the first end surface 41 of the light emitting diode 40 including the electrode 43 is directed toward the temporary substrate 10.
  • the light emitting diode 40 includes a red micro light emitting diode, a blue micro light emitting diode, and a green micro light emitting diode, and the height of the light emitting diode 40 of different colors is different.
  • the light emitting diode 40 is a miniature light emitting diode with a flip chip structure.
  • the light emitting diode 40 includes a first end surface 41, a second end surface 42 disposed opposite to the first end surface 41, and two electrodes 43 included in the first end surface 41.
  • the temporary substrate 10 is coated with a first adhesive layer 11, and two electrodes 43 of the light-emitting diode 40 are embedded in the first adhesive layer 11 so that the first end surface 41 is bonded to the first adhesive layer 11.
  • the material of the first adhesive layer 11 may be, but is not limited to, photosensitive adhesive material and pyrolytic glue.
  • step S104 the adhesive layer 20 is respectively coated on the plurality of temporary substrates 10 so that the adhesive layer 20 covers the light emitting diode 40 and the height H of the adhesive layer 20 on each temporary substrate 10 is the same.
  • the material of the glue layer 20 can be, but is not limited to, photoresist.
  • step S106 the glue layer 20 between adjacent light emitting diodes 40 is removed. Specifically, the adhesive layer 20 between adjacent light-emitting diodes 40 is removed by exposure or etching, so as to form a flat layer 21 on the side of the light-emitting diodes 40 of different colors away from the temporary substrate 10.
  • step S108 the light-emitting diodes 40 on each temporary substrate 10 are transferred to the same display backplane 50.
  • a transfer device 30 is provided.
  • the transfer device 30 includes a transfer substrate 31, and the second adhesive layer 32 is coated on the transfer substrate 31.
  • the material of the second adhesive layer 32 can be, but is not limited to, photosensitive adhesive material or pyrolytic glue.
  • the transfer device 30 is used to selectively pick up the light-emitting diodes 40 on each temporary substrate 10, so that the light-emitting diodes 40 of each color are alternately pasted on the transfer substrate 31 through the second adhesive layer 32.
  • the light emitting diode 40 is transferred to the display back panel 50 by the transfer device 30.
  • the viscosity reducing device 60 is used to reduce the viscosity of the first adhesive layer 11, so that the viscosity of the first adhesive layer 11 is smaller than that of the second adhesive layer. 32's stickiness. Specifically, the viscosity reducing device 60 is placed on the side of the temporary substrate 10 away from the light emitting diode 40. When the transfer device 30 selectively pastes the light-emitting diode 40, the viscosity reducing device 60 reduces the viscosity of the first adhesive layer 11 at the corresponding position of the light-emitting diode 40 to be pasted.
  • the viscosity reducing device 60 is a lighting device.
  • the laser, laser or other light beams emitted by the illumination device can irradiate the first adhesive layer 11 at the corresponding position of the light emitting diode 40 through the temporary substrate 11, and the viscosity of the first adhesive layer 11 is reduced.
  • the viscosity reducing device 60 is a heating device. The heating device heats the first adhesive layer 11 at the corresponding position of the light-emitting diode 40 to reduce the viscosity of the first adhesive layer 11.
  • the peeling device 70 is used to remove the adhesion of the second adhesive layer 32 to peel off the transfer device 30. Specifically, the peeling device 70 is placed on the side of the transfer substrate 31 away from the light emitting diode 40.
  • the peeling device 70 is a lighting device. The laser or other light beams emitted by the illumination device can be irradiated to the second adhesive layer 32 through the transfer substrate 31 to remove the adhesion of the second adhesive layer 32.
  • the peeling device 70 is a heating device. The heating device heats the second adhesive layer 32 to remove the viscosity of the second adhesive layer 32.
  • step S110 the leveling layer 21 on the light emitting diode is removed. Specifically, a solvent or a photoresist removing liquid is used to remove the flat layer 21 on the second end surface 42 of the light emitting diode 40.
  • FIG. 1 and FIG. 4 are a flow chart of the mass transfer of light-emitting diodes according to the first embodiment of the present invention and a schematic diagram of the mass transfer process of light-emitting diodes according to the second embodiment of the first embodiment of the present invention.
  • the difference between the mass transfer method of the light-emitting diode provided in the second embodiment and the mass transfer method provided in the first embodiment is that the light-emitting diode 40 is a miniature light-emitting diode with a vertical structure, and the light-emitting diode 40 includes a first end surface. 41. A second end surface 42 disposed opposite to the first end surface 41, and an electrode 43 included in the first end surface 41.
  • the other steps of the mass transfer method provided in the second specific embodiment are basically the same as those of the mass transfer method provided in the first specific embodiment, and will not be repeated here.
  • FIG. 7 and FIG. 8 are the sub-flow chart of the mass transfer of the light-emitting diode provided by the first embodiment of the present invention and the sub-process of the mass transfer of the light-emitting diode provided by the first specific embodiment of the first embodiment of the present invention Schematic.
  • step S102 before providing a number of temporary substrates 10, the method for mass transfer of light-emitting diodes further includes the following steps.
  • Step S1011 coating the first adhesive layer 11 on the temporary substrate 10.
  • step S1012 the electrode 43 of the light-emitting diode 40 is embedded in the first adhesive layer 11, so that the first end surface 41 and the first adhesive layer 11 are attached to each other.
  • the first adhesive layer 11 coated on the temporary substrate 10 is directed toward the light emitting diode 40 formed on the original substrate 80.
  • the light-emitting diodes 40 of the same color are formed on the same original substrate 80.
  • the temporary substrate 10 is moved toward the original substrate 80 so that the electrode 43 of the light-emitting diode 40 is embedded in the first adhesive layer 11, and the light-emitting diode 40 is attached to the temporary substrate 10 through the first adhesive layer 11.
  • the laser device 90 to peel off the original substrate 80, and place the laser device 90 on the side of the original substrate 80 away from the light emitting diode 40, so that the laser light emitted by the laser device 90 passes through the original substrate 80 and illuminates the light emitting diode 40, thereby peeling off the original substrate 80.
  • FIGS. 7 and 9 are the sub-flow diagrams of the mass transfer of light-emitting diodes according to the first embodiment of the present invention and the sub-processes of mass transfer of light-emitting diodes according to the second embodiment of the first embodiment of the present invention.
  • the difference between the mass transfer sub-method of light-emitting diodes provided in the second embodiment and the mass transfer sub-method of light-emitting diodes provided in the first embodiment is that the light-emitting diode 40 is a miniature light-emitting diode with a vertical structure.
  • 40 includes a first end surface 41, a second end surface 42 disposed opposite to the first end surface 41, and an electrode 43 included in the first end surface 41.
  • the other steps of the mass transfer sub-method provided in the second specific embodiment are basically the same as those of the mass transfer sub-method provided in the first specific embodiment, and will not be repeated here.
  • the adhesive layer 20 is respectively coated on the temporary substrate 10, so that the light-emitting diodes 40 of different colors are formed on the side away from the temporary substrate 10 to form a flat layer 21, and the flat layer 21 is away from the side of the temporary substrate 10
  • the height to the temporary substrate 10 is the same.
  • use the transfer device 30 to selectively pick up the light-emitting diodes 40 of different colors, so that the light-emitting diodes 40 of different colors are alternately pasted on the transfer device 30, so as to realize the one-time transfer of the light-emitting diodes 40 of different heights and colors to the display back. Board 50.
  • FIG. 2 and FIG. 5 are a flow chart of the mass transfer of light-emitting diodes according to the second embodiment of the present invention and a schematic diagram of the mass transfer process of light-emitting diodes according to the first embodiment of the second embodiment of the present invention.
  • the method for mass transfer of light-emitting diodes specifically includes the following steps.
  • the light emitting diodes 40 of different colors are transferred from the corresponding original substrate 80 to the same temporary substrate 10.
  • the light emitting diode 40 includes a red micro light emitting diode, a blue micro light emitting diode, and a green micro light emitting diode, and the height of the light emitting diode 40 of different colors is different.
  • the light emitting diode 40 is a miniature light emitting diode with a flip chip structure.
  • the light emitting diode 40 includes a first end surface 41, a second end surface 42 disposed opposite to the first end surface 41, and two electrodes 43 included in the first end surface 41.
  • the first adhesive layer 11 is coated on the temporary substrate 10, wherein the material of the first adhesive layer 11 can be, but is not limited to, photosensitive adhesive material and pyrolytic glue.
  • the first adhesive layer 11 is directed toward the light emitting diode 40 formed on the native substrate 80. Among them, the light-emitting diodes 40 of the same color are formed on the same original substrate 80.
  • the temporary substrate 10 in the direction of the original substrate 80, and use the temporary substrate 10 to selectively transfer the light-emitting diodes 40 on each original substrate 80 in the order of the height of the light-emitting diodes 40 from low to high, so that the electrodes of the light-emitting diodes 40 to be transferred 43 is embedded in the first adhesive layer 11 so that the first end surface 41 is attached to the first adhesive layer 11, and the light emitting diodes 40 of different colors are alternately pasted on the temporary substrate 10 through the first adhesive layer 11.
  • the first end surface 41 of the light emitting diode 40 including the electrode 43 faces the temporary substrate 10.
  • the laser device 90 is used to peel off the light-emitting diode 40 to be transferred, and the laser device 90 is placed on the side of the original substrate 80 away from the light-emitting diode 40, so that the laser device 90 emits The laser light irradiates the light emitting diode 40 to be transferred through the original substrate 80, thereby peeling off the light emitting diode 40 to be transferred.
  • step S203 the glue layer 20 is coated on the temporary substrate 10 so that the glue layer 20 covers the light emitting diode 40 and the height H of the glue layer 20 is the same.
  • the material of the glue layer 20 can be, but is not limited to, photoresist.
  • step S205 the glue layer 20 between adjacent light emitting diodes 40 is removed. Specifically, the adhesive layer 20 between adjacent light-emitting diodes 40 is removed by exposure or etching, so as to form a flat layer 21 on the side of the light-emitting diodes 40 of different colors away from the temporary substrate 10.
  • step S207 the light-emitting diodes 40 on the temporary substrate 10 are transferred to the display backplane 50.
  • a transfer device 30 is provided.
  • the transfer device 30 includes a transfer substrate 31, and the second adhesive layer 32 is coated on the transfer substrate 31.
  • the material of the second adhesive layer 32 can be, but is not limited to, photosensitive adhesive material or pyrolytic glue.
  • the light-emitting diode 40 on the temporary substrate 10 is picked up by the transfer device 30, the light-emitting diode 40 is pasted on the transfer substrate 31 through the second adhesive layer 32, and the light-emitting diode 40 is transferred to the display backplane 50 by the transfer device 30.
  • the viscosity reducing device 60 is used to reduce the viscosity of the first adhesive layer 11 so that the viscosity of the first adhesive layer 11 is smaller than that of the second adhesive layer 32. Specifically, the viscosity reducing device 60 is placed on the side of the temporary substrate 10 away from the light emitting diode 40. When the transfer device 30 sticks the light emitting diode 40, the viscosity reducing device 60 reduces the viscosity of the first adhesive layer 11. Wherein, when the first adhesive layer 11 is a photosensitive adhesive material, the viscosity reducing device 60 is a lighting device.
  • the laser or other beams emitted by the illumination device can be irradiated to the first adhesive layer 11 through the temporary substrate 11 to reduce the viscosity of the first adhesive layer 11.
  • the viscosity reducing device 60 is a heating device. The heating device heats the first adhesive layer 11 to reduce the viscosity of the first adhesive layer 11.
  • the peeling device 70 is used to remove the adhesion of the second adhesive layer 32 to peel off the transfer device 30. Specifically, the peeling device 70 is placed on the side of the transfer substrate 31 away from the light emitting diode 40.
  • the peeling device 70 is a lighting device.
  • the laser, laser light or other light beams emitted by the illumination device can be irradiated to the second adhesive layer 32 through the transfer substrate 31 to remove the adhesiveness of the second adhesive layer 32.
  • the peeling device 70 is a heating device. The heating device heats the second adhesive layer 32 to remove the viscosity of the second adhesive layer 32.
  • step S209 the flat layer 21 on the light emitting diode 40 is removed.
  • a solvent or a photoresist removing liquid is used to remove the flat layer 21 on the second end surface 42 of the light emitting diode 40.
  • FIG. 2 and FIG. 6 are a flow chart of the mass transfer of light-emitting diodes according to the second embodiment of the present invention and a schematic diagram of the mass transfer process of light-emitting diodes according to the second specific embodiment of the second embodiment of the present invention.
  • the difference between the mass transfer method for light-emitting diodes provided in the second embodiment and the mass transfer method for light-emitting diodes provided in the first embodiment is that the light-emitting diode 40 is a vertical micro-light-emitting diode, and the light-emitting diode 40 includes The first end surface 41, the second end surface 42 disposed opposite to the first end surface 41, and an electrode 43 included in the first end surface 41.
  • the other steps of the mass transfer method provided in the second specific embodiment are basically the same as those of the mass transfer method provided in the first specific embodiment, and will not be repeated here.
  • the light-emitting diodes 40 formed on different primary substrates 80 are first transferred to the same temporary substrate 10 so that the light-emitting diodes 40 of different colors are alternately pasted on the temporary substrate 10 at intervals. Then coat the adhesive layer 20 on the temporary substrate 10, so that the light emitting diodes 40 of different colors are formed on the side away from the temporary substrate 10 to form a leveling layer 21, and the leveling layer 21 is away from the side of the temporary substrate 10 to the height of the temporary substrate 10 same.
  • the transfer device 30 is then used to pick up the light-emitting diodes 40, so that the light-emitting diodes 40 with different heights and different colors can be transferred to the display backplane 50 at one time.
  • FIG. 10a is a schematic diagram of a display backplane assembly 1000 according to an embodiment of the present invention.
  • the display backplane assembly 1000 includes a display backplane 50, a light emitting diode 40, and a flattening layer 21.
  • light-emitting diodes 40 of different colors are arranged on the display backplane 50.
  • the light emitting diodes 40 include red micro light emitting diodes, blue micro light emitting diodes, and green micro light emitting diodes.
  • the light emitting diodes 40 of different colors are alternately arranged on the display back panel 50 at intervals, and the light emitting diodes 40 of different colors have different heights.
  • the light emitting diode 40 is a miniature light emitting diode with a flip chip structure.
  • the light emitting diode 40 includes a first end surface 41, a second end surface 42 disposed opposite to the first end surface 41, and two electrodes 43 included in the first end surface 41.
  • the first end surface 41 including the two electrodes 43 faces the display backplane 50.
  • the leveling layer 21 is formed on the side of the light emitting diodes 40 of different colors away from the display backplane 50, and the corresponding leveling layer 21 of each light emitting diode 40 has the same height h from the side away from the display backplane 50 to the display backplane 50.
  • the material of the leveling layer 21 is photoresist.
  • FIG. 10b is a schematic diagram of a display backplane assembly 2000 according to an embodiment of the present invention.
  • the difference between the display backplane assembly 2000 and the display backplane assembly 1000 is that the light emitting diode 40 is a vertical micro light emitting diode.
  • the light emitting diode 40 includes a first end surface 41 and a second end surface 42 disposed opposite to the first end surface 41. , And an electrode 43 included in the first end surface 41.
  • Other structures of the display backplane assembly 2000 are basically the same as those of the display backplane assembly 1000, and will not be repeated here.

Abstract

本发明提供了一种发光二极管的巨量转移方法，所述巨量转移方法包括：提供若干临时基板，每个所述临时基板上设有一种颜色的发光二极管，不同颜色的所述发光二极管的高度不同；分别涂布胶层于所述若干临时基板，以使所述胶层包覆所述发光二极管且每个所述临时基板上的所述胶层的高度均相同；去除相邻所述发光二极管之间的所述胶层，以在所述不同颜色的发光二极管远离所述临时基板的一侧上皆形成平整层；以及将每一所述临时基板上的所述发光二极管转移至同一显示背板。此外，本发明还提供一种发光二极管的巨量转移方法、以及显示背板组件，所述显示背板组件包括显示背板、设置于所述显示背板上不同颜色的发光二极管、以及平整层。

Description

发光二极管的巨量转移方法、以及显示背板组件 技术领域
本发明涉及微型发光二极管（Micro-LED）技术领域，尤其涉及发光二极管的巨量转移方法、以及显示背板组件。
 背景技术
微型发光二极管（micro-LED），即发光二极管微缩化和矩阵化技术，具有良好的稳定性、寿命，以及运行温度上的优势。微型发光二极管还继承了发光二极管低功耗、色彩饱和度高、反应速度快、对比度强等优点。同时，微型发光二极管具有亮度更高、功率消耗量更低等优势。
因此，微型发光二极管未来将具有极大地应用前景，例如微型发光二极管显示屏。但是目前，制造微型发光二极管显示屏最大的瓶颈在于如何使其能够量产化。而实现量产化最有效的方式就是实现巨量转移。目前已有的巨量转移方法需分别将红色、蓝色、绿色微型发光二极管转移至显示背板，即进行三次转移，转移过程较繁琐。且由于制造工艺不同，不同颜色的微型发光二极管高度不同，高度不同的微型发光二极管给转移过程造成了更大的难度。
因此，如何高效地转移不同高度的微型发光二极管是亟需克服的问题。
 技术问题
本发明提供了发光二极管的巨量转移方法，可以一次性将不同高度的红色、蓝色、绿色微型发光二极管转移至显示背板，简化转移过程，节约转移时间。
 技术解决方案
第一方面，本发明实施例提供一种发光二极管的巨量转移方法，所述巨量转移方法包括：
提供若干临时基板，每个所述临时基板上设有一种颜色的发光二极管，不同颜色的所述发光二极管的高度不同；
分别涂布胶层于所述若干临时基板，以使所述胶层包覆所述发光二极管且每个所述临时基板上的所述胶层的高度均相同；
去除相邻所述发光二极管之间的所述胶层，以在所述不同颜色的发光二极管远离所述临时基板的一侧上皆形成平整层；以及
将每一所述临时基板上的所述发光二极管转移至同一显示背板。
第二方面，本发明实施例还提供一种发光二极管的巨量转移方法，所述巨量转移方法包括：
将不同颜色的发光二极管从对应的原生基板转贴至同一临时基板，不同颜色的发光二极管的高度不同；
涂布胶层于所述临时基板，以使所述胶层包覆所述发光二极管且所述胶层高度相同；
去除相邻所述发光二极管之间的所述胶层，以在所述不同颜色的发光二极管远离所述临时基板的一侧上皆形成平整层；以及
将所述临时基板上的所述发光二极管转移至显示背板。
第三方面，本发明实施例提供一种显示背板组件，所述显示背板组件包括：
显示背板；
设置于所述显示背板上不同颜色的发光二极管，所述不同颜色的发光二极管的高度不同；以及
形成于所述不同颜色的发光二极管远离所述显示背板一侧的平整层，每一所述发光二极管相应的所述平整层远离所述显示背板的一侧到所述显示背板的高度相同。
 有益效果
上述发光二极管的巨量转移方法、以及显示背板组件，通过在不同颜色的发光二极管上涂布胶层，使得不同颜色的发光二极管远离临时基板的一侧上均形成平整层，且平整层远离临时基板的一侧到临时基板的高度相同。再利用转移装置将发光二极管转移至显示背板，从而实现一次性将高度不同、不同颜色的发光二极管转移至显示背板。
 附图说明
图1为本发明第一实施例提供的发光二极管的巨量转移流程图。
图2为本发明第二实施例提供的发光二极管的巨量转移流程图。
图3为本发明第一实施例第一具体实施例提供的发光二极管的巨量转移过程示意图。
图4为本发明第一实施例第二具体实施例提供的发光二极管的巨量转移过程示意图
图5为本发明第二实施例第一具体实施例提供的发光二极管的巨量转移过程示意图。
图6为本发明第二实施例第二具体实施例提供的发光二极管的巨量转移过程示意图。
图7为本发明第一实施例提供的发光二极管的巨量转移子流程图。
图8为本发明第一实施例第一具体实施例提供的发光二极管的巨量转移子过程示意图。
图9为本发明第一实施例第二具体实施例提供的发光二极管的巨量转移子过程示意图。
图10a和图10b为本发明实施例提供的显示背板组件的示意图。
 本发明的最佳实施方式
为使得对本发明的内容有更清楚及更准确的理解，现将结合附图详细说明。说明书附图示出本发明的实施例的示例，其中，相同的标号表示相同的元件。可以理解的是，说明书附图示出的比例并非本发明实际实施的比例，其仅为示意说明为目的，并非依照原尺寸作图。
请结合参看图1和图3，其为本发明第一实施例提供的发光二极管的巨量转移流程图和本发明第一实施例第一具体实施例提供的发光二极管的巨量转移过程示意图。发光二极管的巨量转移方法具体包括如下步骤。
步骤S102，提供若干临时基板10，每个临时基板10上设有一种颜色的发光二极管40。具体地，将发光二极管40包含有电极43的第一端面41朝向临时基板10。其中，发光二极管40包括红色微型发光二极管、蓝色微型发光二极管、以及绿色微型发光二极管，不同颜色的发光二极管40的高度不同。发光二极管40为倒装结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的两个电极43。临时基板10上涂布有第一黏着层11，发光二极管40的两个电极43嵌设于第一黏着层11，以使得第一端面41与第一黏着层11贴合。第一黏着层11的材料可以为但不限于光敏性粘性材料、热解胶。
步骤S104，分别涂布胶层20于若干临时基板10，以使胶层20包覆发光二极管40且每个临时基板10上的胶层20的高度H均相同。其中，胶层20的材料可以为但不限于光刻胶。
步骤S106，去除相邻发光二极管40之间的胶层20。具体地，采用曝光或刻蚀的方法去除相邻发光二极管40之间的胶层20，以在不同颜色的发光二极管40远离临时基板10的一侧上皆形成平整层21。
步骤S108，将每一临时基板10上的发光二极管40转移至同一显示背板50。具体地，提供转移装置30，转移装置30包括转移基板31，涂布第二黏着层32于转移基板31。其中，第二黏着层32的材料可以为但不限于光敏性粘性材料、热解胶。利用转移装置30分别选择性拾取每一临时基板10上的发光二极管40，以使得每一种颜色的发光二极管40通过第二黏着层32交替间隔粘贴于转移基板31。利用转移装置30将发光二极管40转移至显示背板50。利用转移装置30分别选择性拾取每一临时基板10上的发光二极管40的同时，利用减粘装置60减小第一黏着层11的粘性，以使得第一黏着层11的粘性小于第二黏着层32的粘性。具体地，减粘装置60放置于临时基板10远离发光二极管40的一侧。转移装置30选择性粘贴发光二极管40时，减粘装置60减小被粘贴发光二极管40相应位置的第一黏着层11的粘性。其中，当第一黏着层11为光敏性粘性材料时，减粘装置60为光照装置。光照装置发射出的激光、镭射光或其他光束可透过临时基板11照射至被粘贴发光二极管40相应位置的第一黏着层11，第一黏着层11的粘性减小。当第一黏着层11为热解胶时，减粘装置60为加热装置。加热装置通过对被粘贴发光二极管40相应位置的第一黏着层11进行加热以减小第一黏着层11的粘性。利用转移装置30将发光二极管40转移至显示背板50的同时，利用剥离装置70去除第二黏着层32的粘性以剥离转移装置30。具体地，剥离装置70放置于转移基板31远离发光二极管40的一侧。当第二黏着层32为光敏性粘性材料时，剥离装置70为光照装置。光照装置发射出的激光或其他光束可透过转移基板31照射至第二黏着层32以去除第二黏着层32的粘性。当第二黏着层32为热解胶时，剥离装置70为加热装置。加热装置通过对第二黏着层32进行加热以去除第二黏着层32的粘性。
步骤S110，去除发光二极管上的平整层21。具体地，利用溶剂或去光阻液去除位于发光二极管40第二端面42上的平整层21。
请结合参看图1和图4，其为本发明第一实施例提供的发光二极管的巨量转移流程图和本发明第一实施例第二具体实施例提供的发光二极管的巨量转移过程示意图。第二具体实施例提供的发光二极管的巨量转移方法与第一具体实施例提供的巨量转移方法的不同之处在于，发光二极管40为垂直结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的一个电极43。第二具体实施例提供的巨量转移方法的其他步骤与第一具体实施例提供的巨量转移方法的基本一致，在此不再赘述。
请结合参看图7和图8，其为本发明第一实施例提供的发光二极管的巨量转移子流程图和本发明第一实施例第一具体实施例提供的发光二极管的巨量转移子过程示意图。执行步骤S102，提供若干临时基板10前，发光二极管的巨量转移方法还包括如下步骤。
步骤S1011，涂布第一黏着层11于临时基板10。
步骤S1012，将发光二极管40的电极43嵌设于第一黏着层11，以使第一端面41与第一黏着层11贴合。具体地，将涂布于临时基板10的第一黏着层11朝向形成于原生基板80的发光二极管40。其中，同一种颜色的发光二极管40形成于同一原生基板80。向原生基板80的方向移动临时基板10，以使得发光二极管40的电极43嵌设于第一黏着层11，发光二极管40通过第一黏着层11粘贴于临时基板10。利用镭射装置90剥离原生基板80，将镭射装置90放置于原生基板80远离发光二极管40的一侧，以使得镭射装置90发射出的镭射光透过原生基板80照射发光二极管40，从而剥离原生基板80。
请结合参看图7和图9，其为本发明第一实施例提供的发光二极管的巨量转移子流程图和本发明第一实施例第二具体实施例提供的发光二极管的巨量转移子过程示意图。第二具体实施例提供的发光二极管的巨量转移子方法与第一具体实施例提供的发光二极管的巨量转移子方法的不同之处在于，发光二极管40为垂直结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的一个电极43。第二具体实施例提供的巨量转移子方法的其他步骤与第一具体实施例提供的巨量转移子方法的基本一致，在此不再赘述。
在上述实施例中，在临时基板10上分别涂布胶层20，使得不同颜色的发光二极管40远离临时基板10的一侧上皆形成平整层21，且平整层21远离临时基板10的一侧到临时基板10的高度相同。再利用转移装置30分别选择性拾取不同颜色的发光二极管40，以使得不同颜色的发光二极管40交替间隔粘贴于转移装置30，从而实现一次性将高度不同、不同颜色的发光二极管40转移至显示背板50。
请结合参看图2和图5，其为本发明第二实施例提供的发光二极管的巨量转移流程图和本发明第二实施例第一具体实施例提供的发光二极管的巨量转移过程示意图。发光二极管的巨量转移方法具体包括如下步骤。
步骤S201，将不同颜色的发光二极管40从对应的原生基板80转贴至同一临时基板10。其中，发光二极管40包括红色微型发光二极管、蓝色微型发光二极管、以及绿色微型发光二极管，不同颜色的发光二极管40的高度不同。发光二极管40为倒装结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的两个电极43。具体地，涂布第一黏着层11于临时基板10，其中，第一黏着层11的材料可以为但不限于光敏性粘性材料、热解胶。将第一黏着层11朝向形成于原生基板80的发光二极管40。其中，同一种颜色的发光二极管40形成于同一原生基板80。向原生基板80的方向移动临时基板10，利用临时基板10按发光二极管40高度从低到高的顺序分别选择性转贴每一原生基板80上的发光二极管40，将待转移的发光二极管40的电极43嵌设于第一黏着层11，以使第一端面41与第一黏着层11贴合，且不同颜色的发光二极管40通过第一黏着层11交替间隔粘贴于临时基板10。其中，将发光二极管40包含有电极43的第一端面41朝向临时基板10。在临时基板10选择性转贴发光二极管40的同时，利用镭射装置90剥离待转移的发光二极管40，将镭射装置90放置于原生基板80远离发光二极管40的一侧，以使得镭射装置90发射出的镭射光透过原生基板80照射待转移的发光二极管40，从而剥离待转移的发光二极管40。
步骤S203，涂布胶层20于临时基板10，以使胶层20包覆发光二极管40且胶层20的高度H相同。其中，胶层20的材料可以为但不限于光刻胶。
步骤S205，去除相邻发光二极管40之间的胶层20。具体地，采用曝光或刻蚀的方法去除相邻发光二极管40之间的胶层20，以在不同颜色的发光二极管40远离临时基板10的一侧上皆形成平整层21。
步骤S207，将临时基板10上的发光二极管40转移至显示背板50。具体地，提供转移装置30，转移装置30包括转移基板31，涂布第二黏着层32于转移基板31。其中，第二黏着层32的材料可以为但不限于光敏性粘性材料、热解胶。利用转移装置30拾取临时基板10上的发光二极管40，发光二极管40通过第二黏着层32粘贴于转移基板31，并利用转移装置30将发光二极管40转移至显示背板50。利用转移装置30拾取临时基板10上的发光二极管40的同时，利用减粘装置60减小第一黏着层11的粘性，以使得第一黏着层11的粘性小于第二黏着层32的粘性。具体地，减粘装置60放置于临时基板10远离发光二极管40的一侧。转移装置30粘贴发光二极管40时，减粘装置60减小第一黏着层11的粘性。其中，当第一黏着层11为光敏性粘性材料时，减粘装置60为光照装置。光照装置发射出的激光或其他光束可透过临时基板11照射至第一黏着层11以减小第一黏着层11的粘性。当第一黏着层11为热解胶时，减粘装置60为加热装置。加热装置通过对第一黏着层11进行加热以减小第一黏着层11的粘性。利用转移装置30将发光二极管40转移至显示背板50的同时，利用剥离装置70去除第二黏着层32的粘性以剥离转移装置30。具体地，剥离装置70放置于转移基板31远离发光二极管40的一侧。当第二黏着层32为光敏性粘性材料时，剥离装置70为光照装置。光照装置发射出的激光、镭射光或其他光束可透过转移基板31照射至第二黏着层32以去除第二黏着层32的粘性。当第二黏着层32为热解胶时，剥离装置70为加热装置。加热装置通过对第二黏着层32进行加热以去除第二黏着层32的粘性。
步骤S209，去除发光二极管40上的平整层21。具体地，利用溶剂或去光阻液去除位于发光二极管40第二端面42上的平整层21。
请结合参看图2和图6，其为本发明第二实施例提供的发光二极管的巨量转移流程图和本发明第二实施例第二具体实施例提供的发光二极管的巨量转移过程示意图。第二具体实施例提供的发光二极管的巨量转移方法与第一具体实施例提供的发光二极管的巨量转移方法的不同之处在于，发光二极管40为垂直结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的一个电极43。第二具体实施例提供的巨量转移方法的其他步骤与第一具体实施例提供的巨量转移方法的基本一致，在此不再赘述。
在上述实施例中，先将形成于不同原生基板80的发光二极管40转贴至同一临时基板10，以使得不同颜色的发光二极管40交替间隔粘贴于临时基板10。再在临时基板10上涂布胶层20，使得不同颜色的发光二极管40远离临时基板10的一侧上皆形成平整层21，且平整层21远离临时基板10的一侧到临时基板10的高度相同。再利用转移装置30拾取发光二极管40，从而实现一次性将高度不同、不同颜色的发光二极管40转移至显示背板50。
请参看图10a，其为本发明实施例提供的显示背板组件1000的示意图。显示背板组件1000包括显示背板50、发光二极管40、以及平整层21。具体地，不同颜色的发光二极管40设置于显示背板50上。其中，发光二极管40包括红色微型发光二极管、蓝色微型发光二极管、以及绿色微型发光二极管，不同颜色的发光二极管40交替间隔设置于显示背板50，且不同颜色的发光二极管40的高度不同。发光二极管40为倒装结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的两个电极43。包含有两个电极43的第一端面41朝向显示背板50。
平整层21形成于不同颜色的发光二极管40远离显示背板50的一侧，每一发光二极管40相应的平整层21远离显示背板50的一侧到显示背板50的高度h相同。其中，平整层21的材料为光刻胶。
请参看图10b，其为本发明实施例提供的显示背板组件2000的示意图。显示背板组件2000与显示背板组件1000的不同之处在于，发光二极管40为垂直结构的微型发光二极管，发光二极管40包括第一端面41、与第一端面41相背设置的第二端面42、以及包含于第一端面41的一个电极43。显示背板组件2000的其他结构与显示背板组件1000的基本一致，在此不再赘述。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘且本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。
以上所列举的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权力范围，因此依本发明权利要求所作的等同变化，仍属于本发明所涵盖的范围。

Claims (16)

  1. 一种发光二极管的巨量转移方法，其特征在于，所述巨量转移方法包括：
    提供若干临时基板，每个所述临时基板上设有一种颜色的发光二极管，不同颜色的所述发光二极管的高度不同；
    分别涂布胶层于所述若干临时基板，以使所述胶层包覆所述发光二极管且每个所述临时基板上的所述胶层的高度均相同；
    去除相邻所述发光二极管之间的所述胶层，以在所述不同颜色的发光二极管远离所述临时基板的一侧上皆形成平整层；以及
    将每一所述临时基板上的所述发光二极管转移至同一显示背板。
  2. [根据细则26改正09.03.2020]
    如权利要求1所述的巨量转移方法，其特征在于，每个所述临时基板上设有一种颜色的发光二极管具体包括：
    将所述发光二极管包含有电极的第一端面朝向所述临时基板，其中，所述发光二极管包括红色微型发光二极管、蓝色微型发光二极管、以及绿色微型发光二极管。
     
     
     
     
     
     
     
     
     
     
     
     
     
     
  3. [根据细则26改正09.03.2020]　
    如权利要求2所述的巨量转移方法，其特征在于，提供若干临时基板前，所述巨量转移方法还包括：
    涂布第一黏着层于所述若干临时基板；
    将所述发光二极管的所述电极嵌设于所述第一黏着层，以使所述第一端面与所述第一黏着层贴合。
  4. [根据细则26改正09.03.2020]　
    如权利要求1所述的巨量转移方法，其特征在于，将每一所述临时基板上的所述发光二极管转移至同一显示背板具体包括：
    提供转移装置，涂布第二黏着层于所述转移装置的转移基板，利用所述转移装置分别选择性拾取每一所述临时基板上的所述发光二极管，以使得每一种颜色的所述发光二极管通过所述第二黏着层交替间隔粘贴于所述转移基板，并利用所述转移装置将所述发光二极管转移至所述显示背板。
  5. [根据细则26改正09.03.2020]　
    如权利要求4所述的巨量转移方法，其特征在于，利用所述转移装置分别选择性拾取每一所述临时基板上的所述发光二极管具体包括：
    利用减粘装置减小所述第一黏着层的粘性，以使得所述第一黏着层的粘性小于所述第二黏着层的粘性。
  6. [根据细则26改正09.03.2020]　
    如权利要求1所述的巨量转移方法，其特征在于，将每一所述临时基板上的所述发光二极管转移至同一显示背板后，所述巨量转移方法还包括：
    去除所述发光二极管上的所述平整层。
  7. [根据细则26改正09.03.2020]　
    一种发光二极管的巨量转移方法，其特征在于，所述巨量转移方法包括：
    将不同颜色的发光二极管从对应的原生基板转贴至同一临时基板，不同颜色的发光二极管的高度不同；
    涂布胶层于所述临时基板，以使所述胶层包覆所述发光二极管且所述胶层高度相同；
    去除相邻所述发光二极管之间的所述胶层，以在所述不同颜色的发光二极管远离所述临时基板的一侧上皆形成平整层；以及
    将所述临时基板上的所述发光二极管转移至显示背板。
  8. [根据细则26改正09.03.2020]　
    如权利要求7所述的巨量转移方法，其特征在于，将不同颜色的发光二极管从对应的原生基板转贴至同一临时基板具体包括：
    将所述发光二极管包含有电极的第一端面朝向所述临时基板，其中，不同颜色的所述发光二极管包括红色微型发光二极管、蓝色微型发光二极管、以及绿色微型发光二极管。
  9. [根据细则26改正09.03.2020]　
    如权利要求8所述的巨量转移方法，其特征在于，将不同颜色的发光二极管从对应的原生基板转贴至同一临时基板还包括：
    涂布第一黏着层于所述临时基板，利用所述临时基板按所述发光二极管高度从低到高的顺序分别选择性转贴每一所述原生基板上的所述发光二极管，将所述发光二极管的所述电极嵌设于所述第一黏着层，以使所述第一端面与所述第一黏着层贴合，且不同颜色的所述发光二极管通过所述第一黏着层交替间隔粘贴于所述临时基板。
  10. [根据细则26改正09.03.2020]　
    如权利要求7所述的巨量转移方法，其特征在于，将所述临时基板上的所述发光二极管转移至显示背板具体包括：
    提供转移装置，涂布第二黏着层于所述转移装置的转移基板，利用所述转移装置拾取所述临时基板上的所述发光二极管，所述发光二极管通过所述第二黏着层粘贴于所述转移基板，并利用所述转移装置将所述发光二极管转移至所述显示背板。
  11. [根据细则26改正09.03.2020]　
    如权利要求10所述的巨量转移方法，其特征在于，利用所述转移装置拾取所述临时基板上的所述发光二极管具体包括：
    利用减粘装置减小所述第一黏着层的粘性，以使得所述第一黏着层的粘性小于所述第二黏着层的粘性。
  12. [根据细则26改正09.03.2020]　
    如权利要求7所述的巨量转移方法，其特征在于，将所述临时基板上的所述发光二极管转移至显示背板后，所述巨量转移方法还包括：
    去除所述发光二极管上的所述平整层。
  13. [根据细则26改正09.03.2020]　
    一种显示背板组件，其特征在于，所述显示背板组件包括：
    显示背板；
    设置于所述显示背板上不同颜色的发光二极管，所述不同颜色的发光二极管的高度不同；以及
    形成于所述不同颜色的发光二极管远离所述显示背板一侧的平整层，每一所述发光二极管相应的所述平整层远离所述显示背板的一侧到所述显示背板的高度相同。
  14. [根据细则26改正09.03.2020]　
    如权利要求13所述的显示背板组件，其特征在于，所述发光二极管包括红色微型发光二极管、蓝色微型发光二极管、以及绿色微型发光二极管，不同颜色的所述发光二极管交替间隔设置于所述显示背板。
  15. [根据细则26改正09.03.2020]　
    如权利要求13所述的显示背板组件，其特征在于，所述发光二极管包含有电极的第一端面朝向所述显示背板。
  16. [根据细则26改正09.03.2020]　
    如权利要求13所述的显示背板组件，其特征在于，所述平整层的材料为光刻胶。
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CN114864759B (zh) * 2022-07-06 2022-09-20 罗化芯显示科技开发(江苏)有限公司 一种微发光二极管显示基板及其制造方法

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