TW201423242A - 主動式矩陣發光微型ｌｅｄ顯示器 - Google Patents

主動式矩陣發光微型ｌｅｄ顯示器 Download PDF

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Publication number
TW201423242A
TW201423242A TW102144872A TW102144872A TW201423242A TW 201423242 A TW201423242 A TW 201423242A TW 102144872 A TW102144872 A TW 102144872A TW 102144872 A TW102144872 A TW 102144872A TW 201423242 A TW201423242 A TW 201423242A
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Taiwan
Prior art keywords
array
micro led
layer
display panel
led devices
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TW102144872A
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English (en)
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TWI614557B (zh
Inventor
Kapil V Sakariya
Andreas Bibl
Hsin-Hua Hu
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Luxvue Technology Corp
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Priority claimed from US13/710,443 external-priority patent/US9178123B2/en
Application filed by Luxvue Technology Corp filed Critical Luxvue Technology Corp
Publication of TW201423242A publication Critical patent/TW201423242A/zh
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Publication of TWI614557B publication Critical patent/TWI614557B/zh

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    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
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Abstract

本文描述一種顯示面板及一種形成顯示面板之方法。顯示面板可包括薄膜電晶體基板，該基板包括像元區域及非像元區域。像元區域包括岸開口(bank opening)陣列及岸開口陣列內之底部電極陣列。將微型LED裝置陣列黏合至岸開口陣列內之對應底部電極陣列。形成頂部電極層陣列，從而將微型LED裝置陣列電連接至非像元區域中之接地線。

Description

主動式矩陣發光微型LED顯示器 【相關申請案】
本申請案係申請於2012年12月10日之美國專利申請案第13/710,443號之部分繼續申請案，該部分繼續申請案以引用之方式併入本文。
本發明之實施例係關於顯示器系統。更特定而言，本發明之實施例係關於用於主動式矩陣顯示面板之接地結構。
平板顯示器在廣泛範圍的電子裝置中之普及性正在增加。普通類型之平板顯示器包括主動式矩陣顯示器及被動式矩陣顯示器。主動式矩陣顯示面板中之每一像元由主動式驅動電路系統驅動，而被動式矩陣顯示面板中之每一像元則不使用該驅動電路系統。諸如現代電腦顯示器、智慧型電話及電視之高解析度彩色顯示面板通常使用主動式矩陣顯示面板結構，以獲取更佳之影像品質。
正在尋求商業應用之一種顯示面板係主動式矩陣有機發光二極體(active matrix organic light emitting diode； AMOLED)顯示面板。第1圖係一頂部發光AMOLED顯示面板之俯視圖圖示。第2圖係第1圖沿像元區域104中之線條X-X截取及沿非像元區域中與接地環116交叉之線條Y-Y截取之橫剖面側視圖圖示。第1圖至第2圖中所圖示之AMOLED顯示面板100一般包括薄膜電晶體(thin film transistor；TFT)基板102，該基板支撐像元區域104及位於像元區域外側之非像元區域102。TFT基板102亦被稱作背板。已經進一步加工以額外包括像元區域及非像元區域之TFT基板亦常被稱作背板。用於AMOLED中之兩種主要TFT基板技術包括多晶矽(polycrystalline silicon；poly-Si)及非晶矽(amorphous silicon；a-Si)。該等技術為在低溫(低於200℃)下將主動式矩陣背板直接製造在可撓性塑膠基板上以用於生產可撓性AMOLED顯示器提供了潛在可能性。像元區域104一般包括經排列在矩陣中之像元106及子像元108，及連接至每一子像元以用於驅動及切換子像元之一組TFT及電容器。非像元區域一般包括：資料驅動器電路110，該電路連接至每一子像元之資料線路以賦能待傳輸至子像元之資料信號(V資料)；掃描驅動器電路112，該電路連接至子像元之掃描線路以賦能待傳輸至子像元之掃描信號(V掃描)；電源線路114，該電源線路用以將功率信號(Vdd)傳輸至TFT；及接地環116，該接地環用以將接地信號(Vss)傳輸至子像元陣列。如圖所示，資料驅動器電路、掃描驅動器電路、電源線路及接地環皆連接至可撓性電路板(flexible circuit board；FCB)113，該可撓性電路板包括用於向電源線路114供電之電源，及電連接至接地環116之電源接 地線。
在示例性AMOLED背板配置中，有機薄膜120及頂部電極118沉積在像元區域104中之每一子像元108上方。有機薄膜120可包括諸如電洞注入層、電洞傳輸層、發光層、電子傳輸層及電子注入層之多個層。有機薄膜120之多個層通常在整個像元區域104上方形成，然而，在遮蔽罩之輔助下，發光層常常僅沉積在對應於子像元108陣列之發光區域的子像元開口127內及底部電極層124上方。然後，頂部電極層118沉積在像元區域104內及同樣在非像元區域內之有機薄膜上方，使得頂部電極118層與接地環116重疊，以便將接地信號轉移至子像元陣列。以此方式，每一子像元108可利用對應之下層TFT電路系統單獨定址，同時，將統一接地信號供應至像元區域104之頂部。
在所圖示之特定實施中，TFT基板102包括：切換電晶體T1，連接至來自資料驅動器電路110之資料線路111；及驅動電晶體T2，連接至電力線路115，該電力線路115連接至電源線路114。切換電晶體T1之閘極亦可連接至來自掃描驅動器電路112中之掃描線路(未圖示)。平坦化層122係在TFT基板上方形成，及開口經形成以曝露TFT工作電路系統。如圖所示，底部電極層124在與TFT電路系統電連接之平坦化層上形成。在電極層形成之後，像元定義層125得以形成，該像元定義層包括對應於子像元108陣列之發光區域的子像元開口127陣列，隨後，有機層120及頂部電極層118在圖案化像元定義層上方，及在圖案化像元定義層125 之子像元開口127內沉積。頂部電極層118在非像元區域中額外形成，及與接地環116電連接。
平坦化層122可作用於防止有機層120及底部電極層124因階差而(或保護該兩者免於)短路。示例性平坦化層122材料包括苯並環丁烯(benzocyclobutene；BCB)及丙烯酸。像元定義層125可由諸如聚醯亞胺之材料形成。底部電極124通常在氧化銦錫(indium tin oxide；ITO)、ITO/Ag、ITO/Ag/ITO、ITO/Ag/氧化銦鋅(indium zinc oxide；IZO)，或ITO/Ag合金/ITO上形成。頂部電極層118係由諸如ITO之透明材料形成以用於頂部發光。
儘管AMOLED顯示面板一般比液晶顯示器(liquid crystal display；LCD)面板消耗更少之電力，但AMOLED顯示面板可能仍為電池操作裝置中之主要功率消耗者。為了延長電池壽命，必須降低顯示面板之功率消耗。
本文描述一種顯示面板及一種形成顯示面板之方法。在一實施例中，顯示面板包括TFT基板，該TFT基板包括像元區域及非像元區域。例如，非像元區域可環繞像元區域。像元區域包括岸開口陣列及該岸開口陣列內之底部電極陣列。底部電極陣列可在對應之岸開口陣列的側壁上形成，及底部電極陣列可反射可見光波長。在一實施例中，焊接材料柱在每一岸開口內之底部電極上形成，以便幫助微型LED裝置與底部電極之黏合。接地線在非像元區域中形成。在一實施例中，接地線係接地環。在一實施例中，圖案化絕緣體 層覆蓋底部電極陣列，及開口陣列係在圖案化絕緣體中形成，從而曝露底部電極陣列。以此方式，圖案化絕緣體層可覆蓋底部電極陣列之邊緣。
在一實施例中，微型LED裝置陣列位於對應之岸開口陣列內之底部電極陣列上。例如，微型LED裝置可為垂直微型LED裝置，及微型LED裝置之最大寬度可為1μm至100μm。透明鈍化層可在不完全覆蓋每一微型LED裝置之頂部導電觸點的情況下，跨越微型LED裝置陣列之側壁而形成。在一實施例中，頂部電極層陣列在微型LED裝置陣列上方形成，從而將微型LED裝置陣列電連接至接地線。例如，每一頂部電極層可跨越單個微型LED裝置列。每一頂部電極可跨越複數個微型LED裝置列。在一實施例中，每一頂部電極層電在像元區域之相對側上連接至接地環。頂部電極層亦可由諸如PEDOT或ITO之透明或半透明材料形成。
在一實施例中，形成顯示面板之方法包括將微型LED裝置陣列自載體基板轉移至包括TFT基板之背板，TFT基板包括像元區域及非像元區域，其中，像元區域包括岸開口陣列及岸開口陣列內之底部電極陣列。TFT基板亦包括在非像元區域中的接地線。在一實施例中，分離的頂部電極層陣列在微型LED裝置陣列上方形成，從而將微型LED裝置陣列電連接至接地線。在一實施例中，頂部電極層由噴墨列印或篩網列印形成。在一實施例中，接地線係接地環，及分離的頂部電極層陣列在接地環之相對側之間跨越。依據本發明之實施例，每一頂部電極層可跨越一或更多個微型LED裝置 列。例如，每一頂部電極層可跨越單個微型LED裝置列，或每一頂部電極層可跨越複數個微型LED裝置列。頂部電極層無需完全覆蓋TFT基板之像元區域。
在一實施例中，微型LED裝置陣列之轉移係利用靜電原理而得以執行，該等靜電原理使用靜電轉移頭陣列。而且，微型LED裝置陣列之黏合可包括金屬間化合物之形成，及可包括使在底部電極陣列上形成之黏合層陣列液化。黏合及液化可部分藉由將熱能自靜電轉移頭陣列轉移至在底部電極陣列上形成之黏合層陣列而得以完成。
100‧‧‧AMOLED顯示面板
102‧‧‧非像元區域/TFT基板
104‧‧‧像元區域
106‧‧‧像元
108‧‧‧子像元
110‧‧‧資料驅動器電路
111‧‧‧資料線路
112‧‧‧掃描驅動器電路
113‧‧‧可撓性電路板
114‧‧‧電源線路
115‧‧‧電力線路
116‧‧‧接地環
118‧‧‧頂部電極層
120‧‧‧有機薄膜
122‧‧‧平坦化層
124‧‧‧底部電極層
125‧‧‧像元定義層
126‧‧‧圖案化岸層
127‧‧‧子像元開口
128‧‧‧岸開口
130‧‧‧開口
140‧‧‧黏合層
142‧‧‧底部電極
144‧‧‧接地連結線
146‧‧‧絕緣體層
148‧‧‧鈍化層
149‧‧‧接地連結線
150‧‧‧熱分配板
151‧‧‧導溝
152‧‧‧加熱器
200‧‧‧載體基板
202‧‧‧熱分配板
204‧‧‧加熱器
300‧‧‧轉移頭基板
302‧‧‧轉移頭
304‧‧‧熱分配板
306‧‧‧加熱器
400‧‧‧微型LED裝置
400B‧‧‧發射藍光的微型LED裝置
400G‧‧‧發射綠光的微型LED裝置
400R‧‧‧發射紅光的微型LED裝置
410‧‧‧可選黏合層
414‧‧‧n摻雜層
416‧‧‧量子井層
418‧‧‧p摻雜層
420‧‧‧底部導電觸點
450‧‧‧微型p-n二極體
451‧‧‧底表面
452‧‧‧頂部導電觸點
453‧‧‧側壁
700‧‧‧顯示器系統
710‧‧‧處理器
720‧‧‧資料接收器
T1‧‧‧切換電晶體
T2‧‧‧驅動電晶體
第1圖係一頂部發光AMOLED顯示面板之俯視圖圖示。
第2圖係第1圖之頂部發光AMOLED顯示面板沿線條X-X及Y-Y截取之側視圖圖示。
第3A圖係依據本發明之一實施例之主動式矩陣顯示面板之俯視圖圖示。
第3B圖係第3A圖中依據本發明之一實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取之側視圖圖示。
第3C圖係第3A圖中依據本發明之一實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取之側視圖圖示，在該圖中，接地環在圖案化岸層內形成。
第3D圖係第3A圖中依據本發明之一實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取之側視圖圖示，在該圖中，接地環在圖案化岸層之下形成。
第4A圖至第4H圖係依據本發明之一實施例之將微型LED裝置陣列轉移至TFT基板之方法的橫剖面側視圖圖示。
第5A圖至第5C圖係依據本發明之一實施例之轉移具有不同顏色發光之微型LED裝置陣列之順序的俯視圖圖示。
第6A圖係依據一實施例在形成頂部電極層之後之一主動式矩陣顯示面板的俯視圖圖示。
第6B圖係依據一實施例在形成分離的頂部電極層之後之一主動式矩陣顯示面板的俯視圖圖示。
第6C圖係第6A圖或第6B圖中依據本發明之一實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取之側視圖圖示。
第6D圖係第6A圖或第6B圖中依據本發明之一實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取之側視圖圖示。
第7圖係依據本發明之一實施例之顯示器系統之示意圖圖示。
本發明之實施例係關於顯示器系統。更特定而言，本發明之實施例係關於一種包括發光微型LED之主動式矩陣顯示面板。
在一態樣中，本發明之實施例描述一種包括基於晶圓之發光微型LED裝置的主動式矩陣顯示面板。微型LED裝 置將基於晶圓之LED裝置的效能、效率及可靠性與用以形成AMOLED背板之薄膜電子設備的高產量、低成本及混合材料相結合。如本文中所使用之術語「微型」裝置或「微型」LED結構可指示依據本發明之實施例之某些裝置或結構的描述性尺寸。如本文中所使用，術語「微型」裝置或結構意欲指示1μm至100μm之尺度。然而，應瞭解，本發明之實施例並非一定限定於此，及實施例之某些態樣可適用於更大及可能更小之尺寸尺度。在一實施例中，一顯示面板類似於典型OLED顯示面板，該顯示面板之微型LED裝置已以每一子像元替換OLED顯示面板之有機層。本發明之一些實施例可利用之示例性微型LED裝置在美國專利申請案第13/372,222號、美國專利申請案第13/436,260號、美國專利申請案第13/458,932號、美國專利申請案第13/711,554號及美國專利申請案第13/749,647號中進行描述，上述全部申請案以引用之方式併入本文。微型LED裝置之發光效率很高，及與10吋對角LCD或OLED顯示器消耗5瓦至10瓦之功率相比，微型LED裝置消耗極少功率(例如，10吋對角顯示器消耗250mW之功率)，從而使顯示面板之功率消耗降低。
在多種實施例中，參考圖式進行描述。然而，某些實施例可在無需該等特定細節中之一或更多者之情況下或在結合其他已知方法及配置之情況下得以實施。在以下描述中，介紹了許多特定細節(例如特定配置、尺寸及製程等)以便提供對本發明之全面理解。在其他情況下，眾所熟知之半導體製程及製造技術未經特別詳細地描述，以避免不必要 地混淆本發明之含義。本說明書全文中對「一實施例」之引用意謂著結合該實施例而描述之特定特徵、結構、配置，或特性被包括在本發明之至少一實施例中。由此，在本說明書全文中多處之用語「在一實施例中」之出現並非一定指示本發明之同一實施例。而且，在一或更多個實施例中，特定特徵、結構、配置或特性可以任何適合之方式組合。
本文中所使用之術語「跨越(spanning)」、「在……上方(over)」、「至(to)」、「在……之間(between)」，及「在……之上(on)」可指示一層相對於其他層之相對位置。如若一層「跨越(spanning)」另一層、在另一層「上方(over)」或「之上(on)」，或黏合「至(to)」另一層或與另一層「接觸(contact)」，則該層可與該另一層直接接觸，或可具有一或更多個中間層。如若一層位於層「之間(between)」，則該層可與該等層直接接觸，或可具有一或更多個中間層。
現請參看第3A圖至第3B圖，該等圖中圖示一實施例，在該實施例中，類似於AMOLED背板之一背板經修正以收納發光微型LED裝置，而非有機發光層。第3A圖係依據一實施例之主動式矩陣顯示面板的俯視圖圖示，及第3B圖係第3A圖中依據本發明之一實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取之側視圖圖示。在該實施例中，下層TFT基板102可類似於關於第1圖至第2圖所描述之典型AMOLED背板中之TFT基板，該下層TFT基板102包括工作電路系統(例如工作電路系統T1、T2)及平坦化層122。開口131可在平坦化層122中形成以接觸工作電路系統。工作 電路系統可包括傳統2T1C(兩個電晶體、一個電容器)電路，該等電路包括切換電晶體、驅動電晶體及儲存電容器。應瞭解，2T1C電路系統旨在示例，及依據本發明之實施例可預期其他類型之電路系統或對傳統2T1C電路系統之修正。例如，可使用更為複雜之電路以補償驅動器電晶體及發光裝置之製程變化，或補償該兩者之不穩定性。而且，儘管本發明之實施例係關於TFT基板102中之頂部閘極電晶體結構進行描述及圖示，但本發明之實施例亦預期底部閘極電晶體結構之使用。同樣，儘管本發明之實施例係關於頂部發光結構而進行描述及圖示，但本發明之實施例亦預期底部發光結構或頂部與底部發光結構之使用。此外，本發明之實施例特別關於包括接地環之高側驅動配置而在下文中進行描述及圖示。在高側驅動配置中，LED可位於PMOS驅動器電晶體之汲極側或NMOS驅動器電晶體之源極側，使得電路推動電流通過LED之p端子。本發明之實施例並非限定於此，該等實施例亦可在低側驅動配置下得以實施，在該低側驅動配置之情況下，接地環在面板中變為電力線路，及電流經牽引通過LED之n端子。
然後，包括岸開口128之圖案化岸層126在平坦化層122上方形成。岸層126可藉由多種技術形成，例如噴墨列印、篩網列印、疊層、旋塗、化學氣相沉積(chemical vapor deposition；CVD)，及物理氣相沉積(physical vapor deposition；PVD)。岸層126對於可見光波長可為不透明、透明或半透明的。岸層126可由多種絕緣材料形成，諸如但不限於可光定 義丙烯酸、光阻材料、二氧化矽(SiO2)、氮化矽(SiNx)、聚(甲基丙烯酸甲酯)(poly(methyl methacrylate)；PMMA)、苯並環丁烯(benzocyclobutene；BCB)、聚醯亞胺、丙烯酸酯、環氧樹脂，及聚酯。在一實施例中，岸層由諸如黑色矩陣材料之不透明材料形成。示例性絕緣黑色矩陣材料包括有機樹脂、玻璃漿料，及包括黑色顏料、金屬顆粒(諸如鎳、鋁、鉬及上述各者之合金)、金屬氧化物顆粒(例如氧化鉻)或金屬氮化物顆粒(例如氮化鉻)之樹脂或漿料。
依據本發明之實施例，以下圖式中描述之岸層126的厚度及岸開口128的寬度可視待安裝在開口內之微型LED裝置的高度、轉移微型LED裝置之轉移頭的高度及解析度而定。在一實施例中，顯示面板之解析度、像元密度及子像元密度可決定岸開口128的寬度。對於具有40PPI(每吋像元數(pixels per inch；PPI))及211μm子像元間距之示例性55吋電視而言，岸開口128寬度可為自幾微米至206微米中之任一尺寸，以決定示例性5μm寬的環繞岸結構。對於具有440PPI及19μm子像元間距之示例性顯示面板而言，岸開口128寬度可為自幾微米至15微米中之任一尺寸，以決定示例性5μm寬的環繞岸結構。岸結構寬度(亦即岸開口128之間的寬度)可為任何適合之尺寸，只要該結構支援所需製程及可縮放至所需PPI。
依據本發明之實施例，岸層126之厚度不太厚，以便岸結構進行作用。厚度可由微型LED裝置高度及預定視角而決定。例如，當岸開口128之側壁與平坦化層122之間形 成角度時，較淺角度可關聯至系統之較寬視角。在一實施例中，岸層126之示例性厚度可為1μm至50μm之間。
然後，圖案化導電層在圖案化岸層126上方形成。請參看第3B圖，在一實施例中，圖案化導電層包括底部電極142，該底部電極142在岸開口128內形成及與工作電路系統電接觸。圖案化導電層亦可視情況包括接地環116。如本文中所使用，術語接地「環」並非必須為圓形圖案，或完全環繞物件之圖案。相反，術語接地「環」意謂著至少在三個側面部分環繞像元區域之圖案。此外，儘管以下實施例係關於接地環116進行描述及圖示，但應瞭解，本發明之實施例亦可利用沿像元區域之一側(例如左側、右側、底部、頂部)或兩側(左側、右側、底部、頂部中之兩者之組合)延行之接地線而得以實施。因此，應瞭解，在以下描述中，對接地環之引用及圖示在系統要求允許之情況下有可能被替換為接地線。
圖案化導電層可由數種導電及反射材料形成，及圖案化導電層可包括一個以上之層。在一實施例中，圖案化導電層包括諸如鋁、鉬、鈦、鎢鈦、銀或金，或上述各者之合金之金屬薄膜。圖案化導電層可包括導電材料，例如非晶矽、諸如氧化銦錫(indium-tin-oxide；ITO)及氧化銦鋅(indium-zinc-oxide；IZO)之透明導電氧化物(transparent conductive oxide；TCO)、奈米碳管薄膜，或諸如聚(3,4-乙烯二氧噻吩)(poly(3,4-ethylenedioxythiophene)；PEDOT)、聚苯胺、聚乙炔、聚吡咯及聚噻吩之透明導電聚合物。在一實施 例中，圖案化導電層包括導電材料及反射導電材料之堆疊。在一實施例中，圖案化導電層包括一三層堆疊，該三層堆疊包括頂層及底層及反射中間層，在該堆疊中，頂層及底層中之一者或兩者為透明的。在一實施例中，圖案化導電層包括導電氧化物-反射金屬-導電氧化物之三層堆疊。導電氧化物層為透明的。例如，圖案化導電層可包括ITO-銀-ITO之層堆疊。在該配置中，頂部及底部ITO層可防止反射金屬(銀)層之擴散及/或氧化。在一實施例中，圖案化導電層包括Ti-Al-Ti堆疊，或Mo-Al-Mo-ITO堆疊。在一實施例中，圖案化導電層包括ITO-Ti-Al-Ti-ITO堆疊。在一實施例中，圖案化導電層之厚度為1μm或更小。可使用適合之技術(諸如但不限於PVD)沉積圖案化導電層。
在底部電極142及接地環116形成之後，可隨即視情況在TFT基板102上方形成絕緣體層146，從而覆蓋圖案化導電層之側壁。絕緣體層146可至少部分覆蓋岸層126及形成底部電極142之反射層，及視情況覆蓋接地環116。
在一實施例中，絕緣體層146係使用適合之技術藉由毯覆性沉積而形成，該適合之技術諸如疊層、旋塗、化學氣相沉積(chemical vapor deposition；CVD)，及物理氣相沉積(physical vapor deposition；PVD)；然後，絕緣體層146係藉由使用諸如微影製程之適合技術而圖案化，以形成曝露底部電極142之開口，及視情況形成曝露接地環116之開口130。在一實施例中，噴墨列印或篩網列印可用以在無需微影製程之情況下形成絕緣體層146及視情況形成開口130。絕緣體層 146可由多種材料形成，該等材料諸如但不限於SiO2、SiNx、PMMA、BCB、聚醯亞胺、丙烯酸酯、環氧樹脂及聚酯。例如，絕緣體層146之厚度可為0.5μm。當絕緣體層146在岸開口128內之底部電極142之側壁上的反射層上方形成時，絕緣體層146可為透明或半透明的，以便不顯著地降低完整系統之發光提取。絕緣體層146之厚度亦可經控制以增加光提取效率，及該厚度亦可經控制以在將發光裝置陣列轉移至反射性岸結構期間不干擾轉移頭陣列。如以下描述中將顯而易見，圖案化絕緣體層146為可選的，及表示用於電分離或鈍化導電層之側壁的一個方式。
在第3B圖所圖示之實施例中，底部電極142及接地環116可由同一導電層形成。在另一實施例中，接地環116可由不同於底部電極142之導電材料形成。例如，接地環116可由導電性高於底部電極142之材料形成。在另一實施例中，接地環116亦可在與底部電極不同的層內形成。第3C圖至第3D圖圖示其中接地環116可在圖案化岸層126內或下方形成之實施例。例如，在第3C圖所圖示之實施例中，在形成接地環116時，開口130可通過圖案化岸層126而形成。在第3D圖所圖示之實施例中，開口130可通過圖案化岸層126及平坦化層122而形成，以接觸可在TFT基板102之工作電路系統的形成期間已形成之接地環116。在該實施例中，用以形成底部電極142之導電層亦可視情況在開口130內形成，以進一步賦能有待形成之頂部電極層與接地環116通過開口130之電接觸。因此，應瞭解，第3A圖至第3D圖所圖示之實施 例並非限定，及存在形成接地環116及形成曝露接地環116之開口130的數種可能性。
仍請參看第3B圖至第3D圖中所圖示之實施例，黏合層140可在底部電極層142上形成以促進微型LED裝置之黏合。在一實施例中，黏合層140係根據該黏合層經由黏合機制(諸如共晶合金黏合、暫態液相黏合或固態擴散黏合，如美國專利申請案第13/749,647號中所描述)與微型LED裝置上之黏合層(尚未放置)相互擴散之能力而選擇。在一實施例中，黏合層140之熔化溫度為250℃或更低。例如，黏合層140可包括諸如錫(232℃)或銦(156.7℃)或該兩者之合金之焊接材料。黏合層140亦可具有高度大於寬度之柱狀外形。依據本發明之一些實施例，較高之黏合層140可為系統組件調平(諸如在微型LED裝置轉移操作期間微型LED裝置陣列與TFT基板之平面度)提供額外之自由度，及為微型LED裝置之高度變化提供額外之自由度，該等高度變化係歸因於液化黏合層由於該等液化黏合層在諸如共晶合金黏合及暫態液相黏合之黏合期間於表面上之展布而發生的高度變化。黏合層140之寬度可小於微型LED底表面之寬度以防止圍繞微型LED側壁之黏合層140發生浸潤，及防止量子井結構短路。
第4A圖至第4H圖係依據本發明之一實施例之將微型LED裝置陣列轉移至TFT基板102之方法的橫剖面側視圖圖示。請參看第4A圖，由轉移頭基板300支撐之轉移頭陣列302經定位在於載體基板200上支撐之微型LED裝置陣列400之上方。加熱器306及熱分配板304可視情況附於轉移頭基 板300。加熱器204及熱分配板202可視情況附於載體基板200。微型LED裝置陣列400與轉移頭陣列302接觸，如第4B圖所圖示；及微型LED裝置陣列400自載體基板200經拾取，如第4C圖所圖示。在一實施例中，利用依據靜電原理操作之轉移頭陣列302，亦即靜電轉移頭來拾取微型LED裝置陣列400。
第4D圖係依據本發明之一實施例在TFT基板102 上方固持微型LED裝置400之轉移頭302之橫剖面側視圖圖示。在所圖示之實施例中，轉移頭302由轉移頭基板300所支撐。如上所述，加熱器306及熱分配板304可視情況附於轉移頭基板以向轉移頭302施加熱。加熱器152及熱分配板150亦可或替代地視情況用以將熱轉移至TFT基板102上之黏合層140，及/或下文所述之微型LED裝置400上之可選黏合層410。
仍請參看第4D圖，該圖圖示依據一實施例之示例性微型LED裝置400之近視圖。將瞭解，所圖示之特定微型LED裝置400為示例性的及本發明之實施例未受限定。在所圖示之特定實施例中，微型LED裝置400包括微型p-n二極體450及底部導電觸點420。黏合層410可視情況在底部導電觸點420下方形成，底部導電觸點420位於微型p-n二極體450與黏合層410之間。在一實施例中，微型LED裝置400進一步包括頂部導電觸點452。在一實施例中，微型p-n二極體450包括頂部n摻雜層414、一或更多個量子井層416及下部p摻雜層418。在其他實施例中，n摻雜及p摻雜層之排列 可相反。微型p-n二極體可經製造具有直側壁或錐形側壁。在某些實施例中，微型p-n二極體450具有向外錐形側壁453(自頂部向底部)。在某些實施例中，微型p-n二極體450具有向內錐形側壁(自頂部向底部)。頂部及底部導電觸點420、452。例如，底部導電觸點420可包括電極層及位於電極層與可選黏合層410之間的障壁層。頂部及底部導電觸點420、452對於可見光波長範圍(例如380nm至750nm)可為透明或不透明的。頂部及底部導電觸點420、452可視情況包括諸如銀層之反射層。微型p-n二極體及導電觸點可各自具有頂表面、底表面及側壁。在一實施例中，微型p-n二極體450之底表面451寬於微型p-n二極體之頂表面，及側壁453自頂部向底部向外呈錐形。微型p-n二極體450之頂表面可寬於p-n二極體之底表面，或兩者大約具有相同寬度。在一實施例中，微型p-n二極體450之底表面451寬於底部導電觸點420之頂表面。微型p-n二極體之底表面亦可與底部導電觸點420之頂表面具有大約相同寬度。在一實施例中，微型p-n二極體450之厚度為幾微米，例如3μm或5μm；導電觸點420、452之厚度為0.1μm至2μm，及可選黏合層410之厚度為0.1μm至1μm。在一實施例中，每一微型LED裝置400之最大寬度為1μm至100μm，例如，30μm、10μm，或5μm。在一實施例中，每一微型LED裝置400之最大寬度必須符合岸開口128中之可用空間，以獲取顯示面板之特定解析度及PPI。
第4E圖係依據本發明之一實施例在TFT基板102上方固持微型LED裝置400陣列之轉移頭陣列的橫剖面側視 圖圖示。第4E圖大體類似於第4D圖中圖示之結構，主要區別在於：微型LED裝置陣列之移送圖示與微型LED裝置陣列內之單個微型LED裝置相反。
現請參看第4F圖，TFT基板102與微型LED裝置陣列400接觸。在圖示之實施例中，使TFT基板102與微型LED裝置陣列400接觸之步驟包括使黏合層140與各個微型LED裝置之微型LED裝置黏合層410接觸。在一實施例中，每一微型LED裝置黏合層410寬於對應之黏合層140。在一實施例中，將能量自靜電轉移頭組件轉移通過微型LED裝置陣列400，以將微型LED裝置陣列400黏合至TFT基板102。例如，可轉移熱能以促進數個類型之黏合機制，諸如共晶合金黏合、暫態液相黏合及固態擴散黏合。熱能轉移亦可藉由自靜電轉移頭組件施加壓力而得以完成。
請參看第4G圖，在一實施例中，能量轉移使黏合層140液化。液化黏合層140可充當軟墊及部分補償黏合期間在微型裝置400陣列與TFT基板之間的系統不均勻調平(例如非平面表面)，及補償微型LED裝置之高度變化。在暫態液相黏合之特定實施中，液化黏合層140與微型LED裝置黏合層410相互擴散以形成金屬間化合物層，該金屬間化合物層之環境熔化溫度高於黏合層140之環境熔化溫度。因此，暫態液相黏合可在黏合層之最低液相溫度下或在高於該溫度下完成。在本發明之一些實施例中，微型LED裝置黏合層410由熔化溫度高於250℃之材料(諸如鉍(271.4℃))形成，或由熔化溫度高於350℃之材料(諸如金(1064℃)、銅(1084℃)、 銀(962℃)、鋁(660℃)、鋅(419.5℃)或鎳(1453℃))形成，及TFT基板黏合層140之熔化溫度低於250℃，諸如錫(232℃)或銦(156.7℃)。
以此方式，支撐TFT基板102之基板150可經加熱至一溫度，該溫度低於黏合層140之熔化溫度，及支撐轉移頭陣列之基板304經加熱至一溫度，該溫度低於黏合層410之熔化溫度，但高於黏合層140之熔化溫度。在該實施例中，自靜電轉移頭組件通過微型LED裝置陣列400之熱轉移足以形成黏合層140之暫態液態，隨後恆溫凝固為金屬間化合物。儘管處於液相，但具有較低熔化溫度之材料不僅展布在表面上，而且擴散至具有較高熔化溫度之材料的固溶體中，或具有較低熔化溫度之材料溶解該具有較高熔化溫度之材料及凝固為金屬間化合物。在特定實施例中，支撐轉移頭陣列之基板304保持在180℃，黏合層410由金形成，及黏合層140由銦形成。
在進行能量轉移以將微型LED裝置陣列400黏合至TFT基板之後，將微型LED裝置陣列400釋放至收納基板上，且移開靜電轉移頭陣列，如第4H圖所示。釋放微型LED裝置陣列400可利用多種方法得以完成，該等方法包括關閉靜電電壓源、降低靜電轉移頭電極兩端之電壓、變更交流電壓之波形及使電壓源接地。
現請參看第5A圖至5C圖，該等圖式圖示依據本發明之一實施例轉移具有不同顏色發光之微型LED裝置陣列400之順序。在第5A圖中圖示之特定配置中，已完成用於將 發射紅光的微型LED裝置400R陣列自第一載體基板轉移至TFT基板102的第一轉移程序。例如，當微型LED裝置400R經設計以發射紅光(例如620nm至750nm波長)時，微型p-n二極體450可包括諸如砷化鋁鎵(aluminum gallium arsenide；AlGaAs)、磷砷化鎵(gallium arsenide phosphide；GaAsP)、磷化鋁鎵銦(aluminum gallium indium phosphide；AlGaInP)及磷化鎵(gallium phosphide；GaP)之材料。請參看第5B圖，已完成用於將發射綠光的微型LED裝置400G陣列自第二載體基板轉移至TFT基板102的第二轉移程序。例如，當微型LED裝置400G經設計以發射綠光(例如495nm至570nm波長)時，微型p-n二極體450可包括諸如氮化銦鎵(indium gallium nitride；InGaN)、氮化鎵(gallium nitride；GaN)、磷化鎵(gallium phosphide；GaP)、磷化鋁鎵銦(aluminum gallium indium phosphide；AlGaInP)及磷化鎵鋁(aluminum gallium phosphide；AlGaP)之材料。請參看第5C圖，已完成用於將發射藍光的微型LED裝置400B陣列自第三載體基板轉移至TFT基板102之第三轉移程序。例如，當微型LED裝置400B經設計以發射藍光(例如450nm至495nm波長)時，微型p-n二極體450可包括諸如氮化鎵(gallium nitride；GaN)、氮化銦鎵(indium gallium nitride；InGaN)及硒化鋅(zinc selenide；ZnSe)之材料。
依據本發明之實施例，轉移頭分隔一間距(x、y及/或對角線)，該間距與對應於像元或子像元陣列之背板上的岸開口之間距相符。表1提供依據本發明之實施例，針對具 有1920x1080p及2560x1600解析度之多種紅綠藍(red-green-blue；RGB)顯示器之示例性實施的列表。應瞭解，本發明之實施例並非限定於RGB色彩方案或1920x1080p或2560x1600解析度，及特定解析度及RGB色彩方案僅以說明為目的。
在上述示例性實施例中，40PPI之像元密度可對應於55吋1920x1080p解析度之電視，及326與440PPI之像元密度可對應於配有RETINA(RTM)顯示器之手持裝置。依據本發明之實施例，取決於質量轉移工具之微型拾取陣列之尺寸，微型拾取陣列中可包括數千個、數百萬個或甚至數億個轉移頭。依據本發明之實施例，1cmx1.12cm之轉移頭陣列可包括837個間距為211μm、634μm之轉移頭，及可包括102000個間距為19μm、58μm之轉移頭。
利用轉移頭陣列拾取之微型LED裝置之數目可能或可能不與轉移頭間距相符。例如，分隔間距為19μm的轉移頭陣列拾取間距為19μm之微型LED裝置陣列。在另一實例中，分隔間距為19μm的轉移頭陣列拾取間距大約為6.33μm之微型LED裝置陣列。以此方式，轉移頭拾取每三個微型LED裝置以便轉移至背板。依據一些實施例，發光微型裝置陣列之頂表面高於絕緣體層146之頂表面，以便在將微型LED裝置放置在岸開口內期間防止轉移頭由背板上之絕緣體層(或任何中間層)損壞，或防止轉移頭損壞該絕緣體層(或任何中間層)。
第6A圖係依據一實施例在頂部電極層形成之後之一主動式矩陣顯示面板的俯視圖圖示。第6B圖係依據一實施例在單獨的頂部電極層形成之後之一主動式矩陣顯示面板的俯視圖圖示。第6C圖至第6D圖係第6A圖或第6B圖中依據本發明之實施例之主動式矩陣顯示面板沿線條X-X及Y-Y截取的側視圖圖示。依據第6A圖至第6B圖中圖示之實施例，一或更多個頂部電極層118在包括微型LED裝置400陣列之像元區域104上方形成，同時亦在非像元區域中形成，及與接地環116重疊。
現請參看第6C圖至第6D圖，在形成一或更多個頂部電極層118之前，微型LED裝置400在岸開口128內經鈍化以便防止在頂部電極層118與底部電極層142之間發生電氣短路，或在一或更多個量子井416處發生短路。如圖所示，在轉移微型LED裝置400陣列之後，鈍化層148可在岸開口 陣列128內之微型LED裝置400之側壁周圍形成。在一實施例中，當微型LED裝置400係垂直LED裝置之時，鈍化層148覆蓋及跨越量子井結構416。鈍化層148亦可覆蓋底部電極層142中尚未由可選絕緣體層146覆蓋之任何部分，以便防止發生可能之短路。因此，鈍化層148可用以鈍化量子井結構416，及底部電極層。依據本發明之實施例，鈍化層148未在微型LED裝置400之頂表面(諸如頂部導電觸點452)上形成。在一實施例中，可在形成鈍化層148之後使用例如O2或CF4電漿蝕刻之電漿蝕刻製程，以深蝕刻鈍化層148，從而確保微型LED裝置400之頂表面(諸如頂部導電觸點452)經曝露以使頂部導電電極118層118能夠與微型LED裝置400進行電接觸。
依據本發明之實施例，鈍化層148對於可見光波長可為透明或半透明的，以便不使完整系統之光提取效率顯著降級。鈍化層可由多種材料形成，該等材料例如但不限於環氧樹脂、諸如聚(甲基丙烯酸甲酯)(poly(methyl methacrylate)；PMMA)之丙烯酸(聚丙烯酸酯)、苯並環丁烯(benzocyclobutene；BCB)、聚醯亞胺及聚酯。在一實施例中，鈍化層148係藉由在微型LED裝置400周圍進行噴墨列印或篩網列印而形成。
在第6C圖中所圖示之特定實施例中，鈍化層148僅在岸開口128內形成。然而，此舉並非必需，且鈍化層148可在岸結構層126之頂部形成。而且，絕緣體層146之形成並非必需，及鈍化層148亦可用以使導電層電絕緣。如第6D 圖中所圖示之實施例所示，鈍化層148亦可用以鈍化形成底部電極142之導電層之側壁。在一實施例中，鈍化層148可視情況用以鈍化接地環116。依據一些實施例，在接地環116上方噴墨列印或篩網列印鈍化層148之製程期間，可形成開口130之形成。以此方式，可無需實施單獨的圖案化操作以形成開口130。
依據本發明之一些實施例，導溝151(或井結構)可在岸層126內形成，如第6D圖所圖示，以便捕獲或防止鈍化層148過度展布及溢流漫過接地連結線149，特別是在鈍化層148係藉由使用諸如利用噴墨列印或篩網列印之溶劑系統而形成之情況下。因此，在一些實施例中，導溝151在岸層126內於岸開口128與相鄰的接地連結線144之間形成。
仍請參看第6C圖至第6D圖，在鈍化層148形成之後，一或更多個頂部導電電極層118在每一微型LED裝置400上方形成，及在存在頂部觸點層452之情況下與該頂部觸點層452電接觸。依據下文描述中之特定應用，頂部電極層118對可見光波長而言可為不透明、具有反射性、透明或半透明的。例如，在頂部發光系統中，頂部電極層118可為透明的，及對於底部發光系統而言，頂部電極層可具有反射性。示例性透明導電材料包括非晶矽、諸如氧化銦錫(indium-tin-oxide；ITO)及氧化銦鋅(indium-zinc-oxide；IZO)之透明導電氧化物(transparent conductive oxides；TCO)、奈米碳管薄膜，或諸如聚(3,4-乙烯二氧噻吩)(poly(3,4-ethylenedioxythiophene)；PEDOT)、聚苯胺、聚乙炔、聚吡咯及聚噻吩之透明導電聚合 物。在一實施例中，頂部電極層118包括諸如銀、金、鋁、鉬、鈦、鎢、ITO及IZO之奈米顆粒。在一特定實施例中，頂部電極層118藉由噴墨列印或篩網列印ITO或諸如PEDOT之透明導電聚合物而形成。其他形成方法可包括化學氣相沉積(chemical vapor deposition；CVD)、物理氣相沉積(physical vapor deposition；PVD)及旋塗。頂部電極層118亦可反射可見光波長。在一實施例中，頂部導電電極層118包括諸如鋁、鉬、鈦、鎢鈦、銀或金，或上述各者之合金之反射金屬薄膜，以用於例如底部發光系統。
請再次參看第6A圖，在所圖示之特定實施例中，頂部電極層118在包括微型LED裝置400陣列之像元區域104上方形成，同時亦在非像元區域中形成及與接地環116重疊。在存在開口130之情況下，頂部電極層118亦可在開口130內及接地環116上方形成。
第6B圖圖示一替代性實施例，在該實施例中，形成單獨的頂部電極層118，從而將一或更多個微型LED裝置400列與接地環連接。在所圖示之特定實施例中，頂部電極層118提供自微型LED裝置400至接地環之電路徑。頂部電極層118並非必須覆蓋整個像元區域104，或整個岸開口128。在所圖示之特定實施例中，每一頂部電極層118連接至接地環116之相對兩側，及水平跨越TFT基板，從而連接單個微型LED400列。然而，此特定配置為示例性的，及數個不同排列皆是可能的。例如，單個頂部電極層118可在n個微型LED列上方通過及將該n個微型LED列電連接至接地環。在另一實施 例中，頂部電極層118僅連接至接地環116或接地線之一側。如第6A圖至第6B圖所示，頂部電極層118之噴墨線路寬度可依據應用而有所不同。例如，該線路寬度可接近像元區域104之寬度。或者，該線路寬度可為最小值。例如，窄至約15μm之線路寬度可利用市售噴墨列印機而完成。因此，頂部電極層118之線路寬度可大於或小於微型LED裝置之最大寬度。
在一態樣中，第6B圖中所圖示之特定實施例可尤其適合於利用噴墨列印或篩網列印局部形成頂部電極層118。習用之AMOLED背板處理順序(諸如用於第1圖至第2圖中之顯示面板之製造的彼等順序)通常在沉積腔室中毯覆性沉積頂部電極層，隨後自較大基板實施個別背板之分割。依據一些實施例，在轉移微型LED裝置陣列400之前，自較大基板分割顯示面板\背板100。在一實施例中，噴墨列印或篩網列印提供用於在每一單獨顯示面板背板100無需單獨遮罩層之情況下圖案化個別頂部電極層118之實用方法。
儘管未單獨圖示，但應瞭解，第6A圖至第6D圖中所圖示之實施例可結合第3C圖至第3D圖中包括之替代性開口配置。
第7圖圖示依據一實施例之顯示器系統700。顯示器系統內安置處理器710、資料接收器720及諸如上述顯示面板中任一者之顯示面板100。資料接收器720可經配置以無線或有線方式接收資料。可以數個無線標準或協定中之任何標準或協定實施無線電，該等標準或協定包括但不限於Wi-Fi (IEEE 802.11族)、WiMAX(IEEE 802.16族)、IEEE 802.20、長期演進(long term evolution；LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍芽(Bluetooth)、上述各者之衍生物，及經指定為3G、4G、5G及以上之任何其他無線協定。
依據顯示器系統700之應用，顯示器系統700可包括其他組件。該等其他組件包括但不限於記憶體、觸控螢幕控制器及電池。在多種實施中，顯示器系統700可為電視、平板電腦、電話、膝上型電腦、電腦監視器、資訊站、數位照相機、手持式遊戲控制台、媒體顯示器、電子書顯示器，或大面積標識顯示器。
在利用本發明之多種態樣時，熟習該項技術者將顯而易見，上述實施例之組合或變化可用於將微型LED裝置整合至主動式矩陣顯示面板中。儘管已關於頂部發光結構描述上述實施例，但本發明之實施例亦可適用於底部發光結構。例如，並非將岸開口128或子像元開口127定位在TFT電路系統上方，而是可在TFT基板102中之下端層上將開口定位在TFT電路系統之鄰近處。同樣，儘管已描述頂部閘極電晶體結構，但本發明之實施例亦可利用底部閘極電晶體結構得以實施。而且，儘管已關於高側驅動配置描述及圖示本發明之實施例，但實施例亦可利用低側驅動配置得以實施，在該低側驅動配置中，上述接地環變為面板中之電力線路。儘管本發明已以特定於結構特徵及/或方法操作之語言進行描述，但應理解，在所附之申請專利範圍中定義之本發明並非一定 限於所述之特定特徵或操作。相反，所揭示之特定特徵及操作將被理解為用於對本發明進行說明的本文所主張之發明之特別合適的實施。
100‧‧‧AMOLED顯示面板
102‧‧‧非像元區域/TFT基板
104‧‧‧像元區域
106‧‧‧像元
108‧‧‧子像元
110‧‧‧資料驅動器電路
112‧‧‧掃描驅動器電路
113‧‧‧可撓性電路板
114‧‧‧電源線路
116‧‧‧接地環
118‧‧‧頂部電極層
128‧‧‧岸開口
400‧‧‧微型LED裝置

Claims (26)

  1. 一種主動式矩陣顯示面板，該顯示面板包括：一薄膜電晶體(thin film transistor；TFT)基板，該基板包括一像元區域及一非像元區域，其中該像元區域包括一岸開口陣列及該岸開口陣列內之一底部電極陣列；一接地線，該接地線在該非像元區域中；一微型LED裝置陣列，該陣列在該對應岸開口陣列內之該底部電極陣列上；及一頂部電極層陣列，該陣列將該微型LED裝置陣列電連接至該接地線。
  2. 如請求項1所述之顯示面板，其中該接地線係位於圍繞該像元區域之該非像元區域中之一接地環。
  3. 如請求項2所述之顯示面板，其中該頂部電極層陣列在該像元區域之相對側上電連接至該接地環。
  4. 如請求項3所述之顯示面板，其中每一頂部電極層跨越一單個微型LED裝置列。
  5. 如請求項3所述之顯示面板，其中每一頂部電極層跨越複數個微型LED裝置列。
  6. 如請求項1所述之顯示面板，其中該像元區域未完全由該頂部電極層陣列覆蓋。
  7. 如請求項1所述之顯示面板，其中該底部電極陣列在該對應岸開口陣列之側壁上形成。
  8. 如請求項7所述之顯示面板，其中該等底部電極可反射該可見光波長範圍。
  9. 如請求項1所述之顯示面板，該顯示面板進一步包括：一圖案化絕緣體層，該圖案化絕緣體層覆蓋該底部電極陣列；及一開口陣列，該開口陣列位於該圖案化絕緣體層中，從而曝露該底部電極陣列。
  10. 如請求項9所述之顯示面板，其中該圖案化絕緣體層覆蓋該底部電極陣列之邊緣。
  11. 如請求項1所述之顯示面板，其中該等微型LED裝置係垂直微型LED裝置。
  12. 如請求項11所述之顯示面板，其中該等微型LED裝置各自之一最大寬度為1μm至100μm。
  13. 如請求項12所述之顯示面板，該顯示面板進一步包括一透明鈍化層，該透明鈍化層跨越該岸開口陣列內之該微型LED裝置陣列之側壁，其中該透明鈍化層未完全覆蓋每一微型LED裝置之一頂部導電觸點。
  14. 如請求項1所述之顯示面板，其中該頂部電極層陣列由一透明或半透明材料形成。
  15. 如請求項14所述之顯示面板，其中該頂部電極層陣列包括一材料，該材料選自由PEDOT及ITO組成之一群組。
  16. 一種形成一顯示面板之方法，該方法包括以下步驟：將一微型LED裝置陣列自一載體基板轉移至一背板，該背板包括：一薄膜電晶體(thin film transistor；TFT)基板，該基板包括一像元區域及一非像元區域，其中該像元區域包括一岸開口陣列及該岸開口陣列內之一底部電極陣列；及該非像元區域中之一接地線；及將該微型LED裝置陣列黏合至該底部電極陣列；及形成一頂部電極層陣列，該陣列將該微型LED裝置陣列電連接至該接地線。
  17. 如請求項16所述之方法，其中形成該頂部電極層陣列之步驟包括以下步驟：噴墨列印步驟或篩網列印步驟。
  18. 如請求項17所述之方法，其中該接地線係一接地環，且該方法進一步包括以下步驟：噴墨列印或篩網列印在該接地環之相對側之間跨越之該頂部電極層陣列。
  19. 如請求項16所述之方法，該方法進一步包括以下步驟：噴墨列印或篩網列印在一單個微型LED裝置列上方跨越之每一頂部電極層。
  20. 如請求項16所述之方法，該方法進一步包括以下步驟：噴墨列印或篩網列印在複數個微型LED裝置列上方跨越之每一頂部電極層。
  21. 如請求項16所述之方法，其中轉移該微型LED裝置陣列之步驟包括以下步驟：利用一靜電轉移頭陣列轉移該微型LED裝置陣列。
  22. 如請求項21所述之方法，其中將該微型LED裝置陣列黏合至該底部電極陣列之步驟包括以下步驟：形成一金屬間化合物。
  23. 如請求項21所述之方法，其中將該微型LED裝置陣列黏合至該底部電極陣列之步驟包括以下步驟：使在該底部電極陣列上形成之一黏合層陣列液化。
  24. 如請求項21所述之方法，其中黏合該微型LED裝置陣列之步驟包括以下步驟：將熱能自一靜電轉移頭陣列轉移至在該底部電極陣列上形成之該黏合層陣列。
  25. 如請求項16所述之方法，該方法進一步包括以下步驟：噴墨列印或篩網列印每一岸開口內之一鈍化層，以覆蓋每一微型LED裝置中之一量子井結構。
  26. 如請求項25所述之方法，該方法進一步包括以下步驟：噴墨列印或篩網列印每一岸開口內之該鈍化層，以覆蓋該底部電極在每一岸開口之全部曝露部分。
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US20140159067A1 (en) 2014-06-12
US9343448B2 (en) 2016-05-17

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