TWI639248B - 用於準備氮化鎵及用於微組裝之相關材料之系統及方法 - Google Patents
用於準備氮化鎵及用於微組裝之相關材料之系統及方法 Download PDFInfo
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- TWI639248B TWI639248B TW104119926A TW104119926A TWI639248B TW I639248 B TWI639248 B TW I639248B TW 104119926 A TW104119926 A TW 104119926A TW 104119926 A TW104119926 A TW 104119926A TW I639248 B TWI639248 B TW I639248B
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Abstract
所揭示技術大體而言係關於一種用於微組裝氮化鎵(GaN)材料及裝置以形成使用小LED與高功率、高電壓及/或高頻率電晶體及二極體之陣列的顯示器及照明組件之方法及系統。GaN材料及裝置可由磊晶形成在藍寶石、碳化矽、氮化鎵、氮化鋁或矽基板上。所揭示技術提供用於準備用於微組裝之至少部分地形成在彼等同質基板中之數者上之GaN材料及裝置之系統及方法。
Description
本申請案主張標題為「Systems and Methods for Preparing GaN and Related Materials for Micro Assembly」之於2014年6月18日提出申請之美國臨時專利申請案第62/014,070號之優先權及權益,該美國臨時專利申請案之內容以全文引用的方式併入本文中。
本發明係關於用於提供可使用大規模並行微轉印印刷方法來印刷之微尺度裝置之結構及方法。
所揭示技術大體而言係關於可轉印微型裝置的形成。半導體晶片或晶粒自動化組裝設備通常使用真空操作放置頭(諸如真空抓持器或取放工具)以拾取並將裝置應用於一基板。使用此技術來拾取及放置超薄及/或小裝置係困難的。微轉印印刷准許選擇並應用此等超薄、易損壞及/或小裝置而不對該等裝置本身造成損害。
微結構印模可用於拾取微型裝置,將該等微型裝置輸送至目的地,及將該等微型裝置印刷至一目的基板上。表面黏附力用於控制對此等裝置之選擇並將其印刷至目的基板上。此程序可大規模地並行執行。印模可經設計以在一單個拾取及印刷操作中轉印數百至數千個離散結構。
微轉印印刷亦實現將高效能半導體微型裝置並行組裝至幾乎任何基板材料上,包含玻璃、塑膠、金屬或其他半導體。基板可係撓性的,藉此准許產生撓性電子裝置。撓性基板可整合至較大數目個組態,包含在脆性矽基電子裝置之情況下不可能之組態。另外,舉例而言,塑膠基板係機械強固且可用於提供較不易於遭受由機械應力引起之損壞及/或電子效能降級之電子裝置。因此,此等材料可用於藉由能夠以低成本在大基板區域上方產生電子裝置之連續、高速印刷技術(例如,捲對捲製造)來製作電子裝置。
此外,此等微轉印印刷技術可用於在與塑膠聚合物基板上之組裝相容之溫度下印刷半導體裝置。另外,半導體材料可印刷至大面積基板上,藉此實現複雜積體電路在大基板區域上方之連續、高速印刷。此外,在撓性或變形裝置定向中具有良好電子效能之撓性電子裝置可經提供以實現一廣泛範圍之撓性電子裝置。
電子主動組件可印刷於非同質基板上方。舉例而言,此等印刷技術可用於形成成像裝置(諸如平板液晶、LED或OLED顯示裝置),及/或用於數位射線照相板中。在每一例項中,必須將電子主動組件自一同質基板轉印到一目的基板(例如,一主動組件陣列分佈於其上之一非同質基板)。使用一彈性體印模自同質基板拾取主動組件並將其轉印到目的基板。主動組件之釋放必須經控制且可預測。
在微轉印印刷中,小晶片通常形成在一矽基板及一犧牲層上,該犧牲層藉由使用光微影程序來蝕刻以形成繫鏈而經底切。矽基板促進在晶圓與小晶片之間形成繫鏈,該等繫鏈在微轉印印刷程序期間斷開以釋放小晶片。然而,形成GaN裝置之習用方法並不會導致形成可使用微轉印印刷技術組裝之微尺度裝置。另外,形成GaN裝置之習用方法並不會在藍寶石上實現可印刷GaN裝置。儘管與藍寶石相比相對不昂貴,但矽與構成LED之GaN晶體結構具有比藍寶石甚至較大之一
晶格不匹配,進一步降低所得LED之效能。因此,在某些實施例中,期望使用一藍寶石基板形成可印刷結構,諸如LED。然而,不存在用於底切形成於一藍寶石基板上之一小晶片以實現用於微轉印印刷之小晶片釋放之可用方法。
因此,需要實現可經微轉印印刷之形成於一基板(例如,矽或藍寶石)上之微型LED小晶片之構造的結構及方法。亦需要實現印刷於目的基板上之小晶片之電互連的簡單且廉價之方法及結構。此外,需要允許使用比習用方法少之處理步驟來電連接印刷結構(諸如,印刷LED)之電觸點之方法及結構。
因此,需要用於在GaN及適於微轉印印刷之相關材料中準備高效能、小型且密集之結構陣列的可預測且可控制之系統及方法。
在一項態樣中,本發明係針對一種自一矽同質基板準備經釋放或可釋放結構之方法,該方法包括:在包括Si(1 1 1)之一基板上沈積選自由以下各項組成之群組之一或多個部件:GaN、AlGaN、InGaN、InGaAlN及SiN,藉此形成一磊晶材料;使用在該基板上之該磊晶材料形成裝置;在該磊晶材料中將包括該等裝置之可釋放結構劃界,藉此部分地曝露該基板;形成錨定結構及拴繫結構使得在該基板與蝕刻劑接觸之後該等可釋放結構藉由該等錨定結構及拴繫結構將該等裝置連接至該基板;藉助一蝕刻劑將在該等可釋放結構下方的矽材料移除,藉此形成包括該等裝置之可印刷結構,其中藉由該等繫鏈結構及錨結構維持該等可印刷結構之一空間定向;及將該基板及藉由錨定結構及/或拴繫結構連接至該基板之該等可印刷結構曝露於一或多種化學試劑以用於調節該等經釋放結構之新曝露表面。
在某些實施例中,將該基板及該等可印刷結構曝露於一或多種化學試劑包括曝露於經加熱之磷酸。在某些實施例中,將該基板及該
等可印刷結構曝露於一或多種化學試劑對該新曝露表面賦予表面粗糙度。
在某些實施例中,該蝕刻劑係經加熱之氫氧化四鉀基銨、氫氧化鉀、氫氧化鈉或用於執行各向異性矽蝕刻之一鹼性溶液。
在某些實施例中,形成裝置包括:沈積及/或圖案化一介電及/或導電薄膜。
在某些實施例中,在該磊晶材料中形成該等錨定結構及拴繫結構。
在某些實施例中,由非磊晶材料形成該等錨定及拴繫結構。
在某些實施例中,該非磊晶材料包括選自由以下各項組成之群組之一或多種磊晶材料:氮化矽、氧化矽。
在某些實施例中,該方法進一步包括:形成一或多個囊封結構以囊封該可印刷結構之至少一部分。
在某些實施例中,該方法進一步包括:在移除在該等結構下方的矽材料之前,在經曝露矽中形成凹部。
在某些實施例中,在該經曝露矽中形成凹部包括:蝕刻該經曝露矽。
在某些實施例中,該方法進一步包括:微轉印印刷該等可印刷結構中之一或多個可印刷子結構。
在某些實施例中,該微轉印印刷包括:使該等可印刷結構中之一或多個可印刷結構與具有一接觸表面之一保形轉印裝置接觸,其中該接觸表面與該一或多個可印刷結構之間的接觸將該一或多個可印刷結構黏附至該接觸表面;使安置在該接觸表面上之該一或多個可印刷結構與一目的基板之接納表面接觸;及使該保形轉印裝置之該接觸表面與該一或多個可印刷結構分離,其中將該一或多個可印刷結構轉印至該接納表面上,藉此將該一或多個可印刷結構組裝在該目的基板之
該接納表面上。
在某些實施例中,該保形轉印裝置係一彈性體印模。
在另一態樣中,本發明係針對一種使用具有一受控膠黏性之一中間基板自一同質裝置基板準備用於微組裝之可印刷材料之方法,該方法包括:在該同質裝置基板上沈積一或多種材料,藉此形成一磊晶材料;用在該基板上的該磊晶材料形成裝置;在該磊晶材料中將包括該等裝置之可釋放結構劃界,藉此部分地曝露該裝置基板;形成錨定結構及拴繫結構使得在該基板與蝕刻劑接觸之後該等可釋放結構藉由該等錨定結構及拴繫結構連接至該基板;將該磊晶材料暫時接合至該中間基板並執行一雷射剝離程序,藉此使該磊晶材料與該裝置基板分離且藉此反轉用於微組裝之該磊晶材料,其中:該中間基板之該受控膠黏性經組態以使得一轉印元件可將該等材料自該中間基板移除以用於微組裝,且該同質基板對雷射照射係透明的,該雷射照射被該同質基板上之一吸收層強烈吸收以使得在曝露於該雷射照射時該吸收層至少部分地分解或以其他方式形成可起始該同質基板與用於微組裝之該等裝置之間的分離之一介面;至少部分地完成裝置在該中間基板上之該形成或劃界;形成不溶於用於將該磊晶材料自該中間基板釋放之一蝕刻劑之錨定、拴繫或囊封結構;藉由移除定位於該中間基板之至少一部分與該等裝置之至少一部分之間的可選擇性移除層之至少一部分來將該等裝置自該中間基板釋放,藉此經由該中間基板自該同質基板形成可印刷可微組裝裝置;及將該中間基板上之用於微組裝之該等經釋放材料轉印至一第二中間印模,藉此以一不同非反轉組態呈現用於微組裝之該磊晶材料,該第二中間印模亦具有受控膠黏性使得該第二中間印模可將用於微組裝之該等材料自該中間印模移除且一轉印元件可將用於微組裝之該磊晶材料自該第二中間印模移除。
在某些實施例中,該裝置基板包括選自由以下各項組成之群組
之一部件:藍寶石、砷化鎵、磷化銦及絕緣體上矽。
在某些實施例中,沈積於該裝置基板上之該一或多種材料包括選自由以下各項組成之群組之至少一個部件:GaN、AlGaN及SiN。
在某些實施例中,該中間基板包括一印模。在某些實施例中,該中間基板包括具有受控膠黏性之一保形彈性體。
在某些實施例中,在該磊晶材料中形成該等錨定結構及拴繫結構。在某些實施例中,由非磊晶材料形成該等錨定及拴繫結構。
在某些實施例中,該非磊晶材料包括選自由以下各項組成之群組之一或多種磊晶材料:氮化矽、氧化矽。
在某些實施例中,該轉印元件包括一彈性體印模。
在某些實施例中,該方法進一步包括:執行熱處理以將該磊晶材料(及/或其上/其中之裝置)暫時接合至該中間基板以形成經接合之基板對。
在某些實施例中,該中間基板之該膠黏性係藉由交聯密度、表面化學、表面紋理、表面組合物、彈性體層厚度及/或表面形貌來控制。在某些實施例中,該中間基板之該膠黏性係藉由壓力或溫度來控制。在某些實施例中,該中間基板之該膠黏性係藉由形貌特徵之暫時崩陷或黏彈率相依黏附效應而形成,藉此形成一暫態膠黏性。
在某些實施例中,用於微組裝之該磊晶材料包括選自由以下各項組成之群組之一或多個部件:GaN、AlGaN、InGaN、InGaAlN及SiN。
在某些實施例中,該同質基板包括藍寶石且用於微組裝之該磊晶材料包括GaN、AlGaN、InGaN、AlInGaN、SiN及非磊晶材料中之至少一者。在某些實施例中,該同質基板包括砷化鎵,且用於微組裝之該磊晶材料包括GaAs、InGaAlP、InGaP、InAlP、AlGaAs、(In)GaNAs(Sb)、InGaAsP、(Si)Ge、SiGeSn及非磊晶材料中之至少一
者。在某些實施例中,該同質基板包括磷化銦,且用於微組裝之該磊晶材料包括InGaAs、InAlGaAs、InAlAs、InGaAsP、InP、InGaAlAsP、GeSn、SiGeSn及非磊晶材料中之至少一者。在某些實施例中,該同質基板包括一絕緣體上矽,且用於微組裝之該磊晶材料包括InGaAs、InAlGaAs、InAlAs、InGaAsP、InP、InGaAlAsP、GeSn、SiGeSn及非磊晶材料中之至少一者。
在某些實施例中,用在該基板上的該磊晶材料製成之該等裝置包括選自由以下各項組成之群組之一或多個部件:積體電路、LED、HEMT、HBT、雷射、VCSEL、二極體、光電二極體、太陽能電池、二極體、齊納二極體、IGBT、肖特基二極體、電容器及色彩轉換器。
在另一態樣中,本發明係針對一種經由一中間基板自一同質藍寶石基板準備用於微組裝之經釋放材料之方法,該方法包括:在該同質藍寶石基板上藉由磊晶生長準備用於微組裝之材料以形成一磊晶材料;將用於微組裝之該等材料黏附至一中間基板以形成一經接合基板對;執行一雷射剝離程序,藉此將用於微組裝之該等材料與該同質藍寶石基板分離及將該經接合基板對分離,其中:藉此反轉用於微組裝之該等材料,且該藍寶石基板對雷射照射係透明的,該雷射照射被該藍寶石基板上之一吸收層強烈吸收使得在曝露於該雷射照射時該吸收層至少部分地分解或以其他方式形成可起始該藍寶石基板與用於微組裝之該等材料之間的分離之一介面;形成不溶於用於將用於微組裝之該等材料自該中間基板釋放之一蝕刻劑之錨定、拴繫及/或囊封結構;及藉由移除定位於該中間基板之至少一部分與用於微組裝之該等材料之至少一部分之間的一可選擇性移除層之至少一部分來將用於微組裝之該等材料自該中間基板釋放,藉此將在該等可釋放結構下方的矽移除並經由該中間基板自藍寶石同質基板形成經釋放可微組裝GaN
材料或裝置。
在某些實施例中,該方法進一步包括:將該中間基板上之用於微組裝之該等經釋放材料轉印至一中間印模,藉此以微組裝之一不同非反轉組態呈現用於微組裝之該等材料。
在某些實施例中,該方法進一步包括:在形成錨定、拴繫及/或囊封結構之前,至少部分地完成裝置在該中間基板上之形成及/或劃界。
在某些實施例中,該方法進一步包括:在藉由磊晶生長準備用於微組裝之材料之後,在用於微組裝之材料中至少部分地形成一裝置。在某些實施例中,該方法進一步包括:在藉由磊晶生長準備用於微組裝之材料之後,在磊晶材料中將可釋放結構劃界,從而部分地曝露該藍寶石基板。在某些實施例中,該方法進一步包括:在藉由磊晶生長準備用於微組裝之材料之後,在該等磊晶材料中形成錨定結構及/或拴繫結構。
在某些實施例中,該方法進一步包括:在藉由磊晶生長準備用於微組裝之材料之後,自經設計以經受住該釋放程序之非磊晶材料(例如,氮化矽或氧化矽)形成錨定及/或拴繫結構。
在某些實施例中,該方法進一步包括:在將用於微組裝之該等材料黏附至該中間基板之後,執行熱處理以將用於微組裝之該等材料暫時接合至該中間基板,藉此形成一經接合基板對。
在某些實施例中,該中間基板係玻璃、陶瓷、矽、鍺、藍寶石或碳化矽。在某些實施例中,該中間基板係光活性、可蝕刻且可溶解中之至少一者。
在某些實施例中,用於微組裝之該等材料包括GaN,且該同質基板係一藍寶石基板。
在某些實施例中,用於微組裝之該等材料包括選自由以下各項
組成之群組之一或多個部件:GaN、AlGaN、InGaN、InGaAIN、AlInGaN、SiN及非磊晶材料。
500‧‧‧基板/第一基板
502‧‧‧裝置
504‧‧‧溝渠
505‧‧‧凸出部
506‧‧‧錨/繫鏈結構/錨定結構/錨定/拴繫結構
508‧‧‧犧牲層
509‧‧‧接合材料
510‧‧‧第二基板
512‧‧‧轉印元件
514‧‧‧接合材料
516‧‧‧凸出部
518‧‧‧接觸墊
藉由參考結合附圖作出之以下闡述,本發明的前述及其他目標、態樣、特徵及優點將變得更顯而易見及更好理解,附圖中:圖1係用於自矽基板準備經釋放GaN之一實例性方法之一流程圖;圖2係用於經由一中間印模自藍寶石基板準備經釋放GaN之一實例性方法之一流程圖;圖3係用於經由一中間基板自藍寶石基板準備經釋放GaN之一方法之一流程圖;圖4係列舉可用於本發明之各種實施例之用於微組裝之材料及裝置、其同質基板及吸收層之實例之一表;及圖5A至圖5K圖解說明用於自塊狀晶圓形成可印刷物件之一系列步驟。
當結合圖式一起時,依據下文所陳述的詳細說明將更明瞭本發明的特徵及優點,其中在通篇中相似元件符號識別對應元件。在圖式中,相似元件符號通常指示相同、功能上類似及/或結構上類似的元件。
圖1係用於自一矽基板準備可釋放GaN裝置之一實例性方法100之一流程圖。在某些實施例中,在Si(1 1 1)基板上藉由磊晶生長準備GaN及相關(例如,AlGaN、InGaN、InGaAIN、SiN)材料(102)。可在GaN材料中至少部分地形成裝置(104),舉例而言,藉由額外圖案化電介質或導電薄膜材料(104)。在磊晶材料中將可釋放結構劃界,從而部分地曝露Si(1 1 1)基板(106)。可釋放結構形成於一源或同質晶圓基
板中且可藉由以下步驟而自該晶圓釋放或移除:使結構與一經圖案化印模(舉例而言,一彈性體印模)實體接觸,將該等結構黏附至該印模,及將該印模及該等結構自該晶圓移除。此程序係藉由使可釋放結構與晶圓部分分離(藉由將一犧牲層自結構下方蝕除)來促進。在某些實施例中,該等可釋放結構係可釋放裝置本身。在其他實施例中,該等可釋放結構包含該等裝置以及其他材料,舉例而言,在於一印刷操作期間斷裂之後保持附接至裝置之繫鏈之部分。
在某些實施例中,可在磊晶材料中形成錨定結構或拴繫結構(108)。此等錨定或拴繫結構可具有以微米為單位之尺寸且通常小於可釋放裝置。另外,若期望,錨定及/或拴繫結構可由諸如氮化矽或氧化矽之非磊晶材料形成,且經設計以經受住釋放蝕刻程序。此等結構可貫穿釋放程序維持物件之空間組態。維持空間組態之結構(通常稱作為錨、繫鏈或其他穩定化結構)可包含光阻劑材料、環氧樹脂、聚醯亞胺、電介質、金屬及/或半導體。此等結構貫穿釋放程序維持至同質基板或其他固定本體之接觸。在某些實施例中,光可定義材料有利於此種類之錨定/拴繫結構,提供形成之簡易性及在諸多情形中提供藉由溶解於濕化學品、有機溶劑或水性混合物中或藉由在氧或氟化合物中灰化之移除簡易性。
在某些實施例中,結構經形成以囊封可釋放結構之至少一部分(110),該可釋放結構包含在步驟104中至少部分地形成之裝置。在某些實施例中,囊封經形成以覆蓋可釋放結構。囊封材料自釋放程序中所使用之化學反應囊封可釋放裝置之主動組件。
在某些實施例中,舉例而言,可藉由蝕刻或剝蝕在經曝露矽中形成凹部(例如,溝渠)(112)以使得能夠形成可釋放結構、錨、及/或繫鏈。將同質基板及其上所包含之可釋放裝置曝露於一各向異性矽蝕刻,舉例而言,經加熱之氫氧化四鉀基銨或氫氧化鉀,或氫氧化鈉或
其他鹼性溶液,藉此執行一釋放蝕刻並將在可釋放結構下方的矽移除(114)。在某些實施例中,將基板及連接至其之所釋放結構曝露於化學試劑以用於調節或處理可釋放結構之新曝露表面(116)。此可藉由(舉例而言)曝露於經加熱之磷酸而完成以賦予表面粗糙。此亦可改良在將可釋放裝置釋放並轉印至目的基板時之印刷良率。因此,方法100可用於自矽同質基板形成經釋放之可微組裝GaN材料或裝置。
圖2係用於經由一中間印模自一藍寶石基板準備可印刷GaN之一實例性方法200之一流程圖。在某些實施例中,在一藍寶石基板上藉由磊晶生長準備GaN及相關(例如,AlGaN、InGaN、InGaAIN、SiN)材料(202)。
在某些實施例中,可在GaN材料中至少部分地形成一裝置,舉例而言,藉由添加及圖案化電介質或導電薄膜材料(204)。電介質材料可包含氧化物或氮化物,諸如氧化矽或氮化矽。導電薄膜材料可包含經圖案化金屬(舉例而言,藉由蒸發或濺鍍而沈積)或經摻雜半導體材料(諸如,經摻雜矽)。可在磊晶材料中將可印刷結構劃界(206)。上述情形可藉由部分地曝露藍寶石基板來完成。另外,可形成錨定結構或拴繫結構(208)。可在磊晶材料中或使用非磊晶材料(諸如氮化矽或氧化矽)形成錨定或拴繫結構。形成繫鏈或錨之材料經挑選以經受住釋放蝕刻程序使得錨/繫鏈保持附接至基板,藉此保留結構之空間定向。
抵靠一第二基板放置GaN材料(210)。第二基板可係彈性體、聚二甲基矽氧烷、玻璃、金屬、聚合物或塑膠。可使用一黏合劑層來將第二基板黏附至裝置。
在某些實施例中,可執行用以將GaN材料或裝置暫時接合至第二基板之一熱處理(212)。此形成一經接合基板對,具有作為同質藍寶石基板之一個基板及充當包含一保形彈性體且具有受控膠黏性之一交
遞基板之第二基板。該膠黏性可係藉由交聯密度、表面化學、表面紋理、表面組合物、彈性體層厚度及/或表面形貌來控制。膠黏性亦可藉由壓力或溫度來控制。此外,膠黏性可因形貌特徵之暫時崩陷或黏彈率相依黏附效應而係暫態的。
在某些實施例中,執行一雷射剝離程序(214),藉此使GaN材料或裝置自其同質藍寶石基板分離並使經接合基板對分離。在雷射剝離程序之後,可將GaN裝置反轉並黏附至具有一受控膠黏性之第二基板。受控膠黏性經選擇使得一轉印元件(例如,包含一彈性體之轉印元件,例如,PDMS)可將GaN自第二基板移除以用於微組裝。此外,可將中間印模上之經釋放GaN轉印至一第二中間印模,藉此以一不同非反轉組態呈現GaN。第二中間印模亦可具有一受控膠黏性(視情況,溫度、壓力及/或率相依受控膠黏性)使得第二中間印模可將GaN自中間印模移除且一轉印元件可將GaN自第二中間印模移除。
在某些實施例中,方法200可包含:至少部分地完成裝置在第二基板上之形成或劃界(216)。上述情形可(舉例而言)藉由添加金屬(例如,Au、Cu、Ag、Al、Pd、Pt、Ni、Co、Pb、Ti、Fe、Cr、V、W等)或鋯鈦酸鉛(例如,SiO2、Si3N5、Al2O3、ZrO2、TiO2、Ta2O5、鈦酸鋇鍶(BST/BSTO)、氧化鈦酸鍶(STO)、鋯鈦酸鉛(PZT)等)及/或蝕刻GaN材料之一部分來完成。因此,方法200可用於經由一中間印模自藍寶石同質基板形成經釋放之可微組裝反轉GaN材料或裝置。
圖3係用於經由一中間基板自藍寶石同質基板準備經釋放GaN之一方法300之一流程圖。在某些實施例中,方法300包含:在藍寶石基板上藉由磊晶生長準備GaN及相關(例如,AlGaN、InGaN、InGaAIN、SiN)材料(302)。在某些實施例中,可在GaN材料中至少部分地形成裝置(304),舉例而言,藉由添加及圖案化電介質(例如,SiO2、Si3N5、Al2O3、ZrO2、TiO2、Ta2O5、鈦酸鋇鍶(BST/BSTO)、
氧化鈦酸鍶(STO)、鋯鈦酸鉛(PZT)等)或導電(例如,包含Au、Cu、Ag、Al、Pd、Pt、Ni、Co、Pb、Ti、Fe、Cr、V、W等)薄膜材料。另外,可在磊晶材料中將可釋放結構劃界(306)。上述情形可藉由部分地曝露藍寶石基板來完成。在某些實施例中,可形成錨定結構及/或拴繫結構(308)。錨定及/或拴繫結構可形成於磊晶材料中或由諸如氮化矽或氧化矽之非磊晶材料形成,經設計以經受住釋放蝕刻程序。
抵靠一第二基板放置GaN材料(310)藉此形成一經接合基板對,該經接合基板對具有用作同質藍寶石基板之一個基板及用作包括一保形彈性體且具有受控膠黏性的一基板之第二基板。在某些實施例中,可執行用以將GaN材料或裝置暫時接合至第二基板之熱處理(312),藉此形成一經接合基板對,該經接合基板對具有用作同質藍寶石基板之一個基板。第二基板可係(i)一玻璃、陶瓷、矽、鍺、藍寶石、碳化矽或包含可在熱及/或壓力下流動或保形且係視情況光活性、可蝕刻或可溶解之一聚合物的其他化合物半導體基板,(ii)一玻璃、陶瓷、矽、鍺、藍寶石、碳化矽或包含可在熱及/或壓力下流動或保形且係視情況可蝕刻或可溶解之一金屬的其他化合物半導體基板,或(iii)一玻璃、陶瓷、矽、鍺、藍寶石、碳化矽或包含可在熱及/或壓力下流動或保形之一材料及可移除、可蝕刻或可溶解之另一下伏材料層之其他化合物半導體基板,諸如Si(1 1 1)、光阻劑、剝離抗蝕劑或金屬。
執行一雷射剝離程序(314),以使GaN材料或裝置自其同質藍寶石基板分離並使經接合基板對分離。將GaN材料或裝置反轉並可將其黏附至第二基板。在某些實施例中,至少部分地完成裝置在第二基板上之形成及/或劃界(316)。上述情形可藉由添加及圖案化金屬或鋯鈦酸鉛,或蝕刻GaN材料之一部分來完成。可形成經設計以經受住將GaN材料自第二基板釋放之一程序之錨定、拴繫或囊封結構(318)。可藉由將定位於第二基板之至少一部分與GaN材料或裝置之至少一部分
之間的一可選擇性移除層之至少一部分移除來將GaN材料或裝置自第二基板釋放(320)。在某些實施例中,可將一中間基板上之經釋放可微組裝GaN轉印至一中間印模,藉此以微組裝之一不同非反轉組態呈現GaN。因此,方法300可用於經由一中間基板自藍寶石同質基板形成經釋放之可微組裝GaN材料或裝置。
圖4係列舉可使用之用於微組裝之材料及裝置、其同質基板及吸收層之實例之一表。雷射剝離促進用於微組裝之半導體材料及裝置之準備。將半導體材料及裝置至少部分地形成在其同質基板上並將其轉印至一中間基板或印模根據闡述自一藍寶石同質基板準備GaN材料及裝置之本說明書之先前章節中所概述之程序。雷射剝離之關鍵元件包含對雷射照射透明之一同質基板,該雷射照射被同質基板上之一層強烈吸收使得在曝露時吸收層可至少部分地分解或以其他方式形成可起始同質基板與用於微組裝之半導體材料及裝置之間的分離之一介面。圖4列舉用於微組裝之相關材料及裝置、其同質基板及吸收層。
為形成諸如藍色微型LED之微型LED,可在一藍寶石基板上生長GaN(氮化鎵)半導體材料。藍寶石通常係特選用於磊晶GaN層之生長基板。然而,藍寶石限制最終LED裝置之構造及效能。舉例而言,GaN/藍寶石複合物無法如矽一般容易切割。此外,與金屬相比,藍寶石具有較差導電性及導熱性。
在某些實施方案中,一雷射反應剝落層沈積在剛性基板上且微型LED形成在剝落層上。為將半導體自藍寶石移除或「剝離」,引導一高強度雷射光束穿過藍寶石並對準GaN。此在介面處形成使GaN與藍寶石取消關聯之一衝擊波以使得將GaN自藍寶石基板剝落。雷射剝離背後之原理係GaN及藍寶石對UV光之不同吸收。GaN強烈吸收雷射輻射,而藍寶石由於其高帶隙能量而係一不良UV吸收體。雷射剝離可快速執行且僅GaN之介面層(或剝落層)達到高溫。
然後將GaN晶圓(及形成於GaN晶圓上之隨附微型LED)轉印並接合至一中間基板。舉例而言,Si(1 1 1)可用作中間基板。然後將可印刷微型LED形成在中間基板上。可在將GaN晶圓轉印至Si(1 1 1)晶圓之前將形成於其上之Si(1 1 1)或一犧牲層蝕刻使得藉由一或多個繫鏈維持每一可印刷微型LED之位置,該等繫鏈在每一可印刷微型LED由一微轉印裝置拾取時斷裂。
圖5A至圖5K圖解說明用於自塊狀晶圓(諸如適於使用一橡膠印模(例如,微轉印印刷)組裝之彼等晶圓)形成可印刷物件之一步驟序列。如在圖5A中所示,提供一基板500。此後,使用光微影方法且如在圖5B中所示在基板500上形成一裝置502。裝置502通常為形成於基板上之諸多組裝中之一者。裝置可係微電子、光電子或微機械裝置。在某些實施例中,一溝渠504形成在裝置502周圍,如在圖5C中所示,藉此在基板500上形成一凸出部505。
如在圖5D中所示,形成一錨/繫鏈結構506。錨/繫鏈結構506接觸裝置502及基板500。用於錨/繫鏈結構506之材料經選定使得其不溶於一釋放化學品中。在某些實施例中,錨/繫鏈結構係一經圖案化材料。一所要材料層可施加至系統並經圖案化(例如,使用光微影)。在某些實施例中,每裝置502存在一個以上錨/繫鏈結構506。
如在圖5E中所示,沈積並圖案化一第二材料以形成一犧牲層508。與錨/繫鏈結構506不同,犧牲層508可溶於一釋放化學品中。因此,當舉例而言藉助適當溶劑蝕刻時,將犧牲層508移除且錨/繫鏈結構506將保留。在某些實施例中,犧牲層508覆蓋裝置502之頂部表面但曝露錨定結構506之至少一部分之頂部表面。
如在圖5F中所示,使用不溶於釋放化學品中之一接合材料509(例如,樹脂、聚醯亞胺、環氧樹脂、共晶金屬、軟金屬)將第一基板500之頂部表面接合至一第二基板510。
如在圖5G中所示,將第一基板500移除(例如,藉由雷射剝離或背部研磨)以曝露裝置502之底部表面、錨定/拴繫結構506之一部分、犧牲層508之一部分及接合材料509之一部分。使用釋放化學品來蝕刻犧牲層508,藉此形成藉由錨定/拴繫結構透過接合材料514連接至第二基板510之一可釋放且可印刷物件,如在圖5H中所示。藉由以下步驟而發生印刷:使裝置502之底部側與一轉印元件512接觸(圖5I),及使轉印元件512與第二基板510分離,藉此使繫鏈斷裂且使裝置與第二基板510分離,如在圖5J中所示。
此方法尤其很好地適於由磊晶生長於藍寶石上之GaN形成可印刷裝置(其中第一基板藉由雷射剝離移除),或適於自塊狀矽晶圓形成可印刷裝置,其中第一基板藉由背部研磨移除。
如在圖5K中所示,在某些實施例中,裝置在其頂部表面上包含一或多個凸出部516。此等凸出部516可係導電凸出部。凸出部516可接觸目的基板514上之一接觸墊518,藉此在將裝置502轉印至目的基板514之後改良連接性。
已闡述方法及設備之特定實施方案,熟習此項技術者現在將明瞭,可使用併入有本發明之概念之其他實施例。因此,本發明不應限於特定實施方案,而是應僅受所附申請專利範圍之精神及範疇限制。
貫穿其中將設備及系統闡述為具有、包含或包括特定組件或將程序及方法闡述為具有、包含或包括特定步驟之闡述,另外預期存在基本上由所敘述之組件組成或由所敘述之組件組成之所揭示技術之設備及系統,且存在基本上由所敘述之處理步驟組成或由所敘述之處理步驟組成之根據所揭示技術之程序及方法。
應理解,只要所揭示技術保持可操作,步驟之次序或執行某些動作之次序並不重要。此外,可同時實行兩個或兩個以上步驟或動作。
Claims (26)
- 一種自一矽同質裝置基板準備多個經釋放或可釋放結構之方法,該方法包括:在包括Si(1 1 1)之一同質裝置基板上沈積以下之至少一者:GaN、AlGaN、InGaN、InGaAlN及SiN,藉此形成一磊晶材料;使用在該同質裝置基板上之該磊晶材料形成多個裝置;藉由將該磊晶材料之至少一部分自該磊晶材料中之該等裝置之至少一部分周圍移除以形成包括該等裝置之多個可釋放結構,藉此部分地曝露該同質裝置基板;形成多個錨定結構及多個拴繫結構,該等錨定結構及該等拴繫結構係至少部分地接觸與該同質裝置基板相對(opposite)之該可釋放結構之一側且至少部分地接觸該同質裝置基板;藉助一蝕刻劑將在該等可釋放結構下方的矽材料移除以形成將該等可釋放結構連接至多個錨之多個繫鏈,藉此形成包括該等裝置之可印刷結構,其中藉由該等繫鏈及該等錨維持該等可印刷結構之該位置及定向;及將該同質裝置基板及藉由該等錨定結構及該等拴繫結構連接至該同質裝置基板之該等可印刷結構曝露於一或多種化學試劑。
- 如請求項1之方法,其中將該同質裝置基板及該等可印刷結構曝露於該一或多種化學試劑包括曝露於經加熱之磷酸。
- 如請求項1之方法,其中將該同質裝置基板及該等可印刷結構曝露於該一或多種化學試劑對該新曝露表面賦予表面粗糙度。
- 如請求項1之方法,其中該蝕刻劑係經加熱之氫氧化四鉀基銨、氫氧化鉀、氫氧化鈉或用於執行各向異性矽蝕刻之一鹼性溶液。
- 如請求項1之方法,其中形成裝置包括沈積及/或圖案化一介電質及/或導電薄膜。
- 如請求項1之方法,其中在該磊晶材料中形成該等錨定結構及拴繫結構。
- 如請求項1之方法,其中由非磊晶材料形成該等錨定及拴繫結構。
- 如請求項1之方法,其包括將氮化矽及氧化矽之一或多者沈積在該同質裝置基板上。
- 如請求項1之方法,其包括形成一或多個囊封結構以囊封該可印刷結構之至少一部分。
- 如請求項1之方法,其包括:在移除在該等結構下方的矽材料之前,在經曝露之矽中形成多個凹部。
- 如請求項1之方法,其中在經曝露之該矽中形成多個凹部包括蝕刻經曝露之該矽。
- 如請求項1之方法,其包括微轉印印刷該等可印刷結構中之一或多個可印刷子結構。
- 如請求項1之方法,其中該微轉印印刷包括:使該等可印刷結構中之一或多個可印刷結構與具有一接觸表面之一保形轉印裝置接觸,其中該接觸表面與該一或多個可印刷結構之間的接觸將該一或多個可印刷結構黏附至該接觸表面;使安置在該接觸表面上之該一或多個可印刷結構與一目的基板之該接納表面接觸;及使該保形轉印裝置之該接觸表面與該一或多個可印刷結構分離,其中將該一或多個可印刷結構轉印至該接納表面上,藉此將該一或多個可印刷結構組裝在該目的基板之該接納表面上。
- 如請求項13之方法,其中該保形轉印裝置係一彈性體印模。
- 一種使用一中間基板自一同質裝置基板準備用於微組裝之多個可印刷材料之方法,該方法包括:將一或多種材料沈積在該同質裝置基板上,藉此形成一磊晶材料;用在該同質裝置基板上的該磊晶材料形成多個裝置;藉由將該磊晶材料之至少一部分自該磊晶材料中之該等裝置之至少一部分周圍移除以形成包括該等裝置之多個可釋放結構,藉此部分地曝露該同質裝置基板;形成經圖案化之多個拴繫結構及多個錨定結構,該等拴繫結構及該等錨定結構接觸與該同質裝置基板相對之該裝置之一側且接觸經曝露之該同質裝置基板之僅一部分;形成多個經圖案化犧牲層,其係在與該同質裝置基板相對之該等裝置之一側上完全在該等裝置及經圖案化之該等拴繫結構及該等錨定結構上方、在接觸經曝露之該同質裝置基板的經圖案化之該等栓繫結構及該等錨定結構之僅一部分上方或不在經圖案化之該等栓繫結構及該等錨定結構上方、且僅部分接觸經曝露之該同質裝置基板,該等經圖案化犧牲層可自該同質裝置基板及經圖案化之該等栓繫結構及該等錨定結構差異地(differentially)蝕刻:將該磊晶材料暫時接合至一中間基板且將該磊晶材料自該同質裝置基板移除,藉此反轉用於微組裝之該磊晶材料;以一蝕刻劑藉由移除該等犧牲層之至少一部分而將該等裝置自該中間基板釋放以形成將該等裝置連接至多個錨之多個繫鏈;及將該中間基板上之用於微組裝之經釋放之該等材料轉印至一中間印模。
- 如請求項15之方法,其中該裝置基板包括選自由以下各項組成之群組之一部件:藍寶石、砷化鎵、磷化銦及絕緣體上矽。
- 如請求項15之方法,其中沈積於該裝置基板上之該一或多種材料包括選自由以下各項組成之群組之至少一個部件:GaN、AlGaN及SiN。
- 如請求項15之方法,其包括至少部分地完成多個裝置在該中間基板上之該形成或劃界。
- 如請求項15之方法,其包括研磨該同質裝置基板以將該磊晶材料自該同質裝置基板分離或使用剝離以將該磊晶材料自該同質裝置基板分離或使用雷射剝離以將該磊晶材料自該同質裝置基板分離。
- 如請求項19之方法,其中該同質裝置基板對雷射照射係透明的,該雷射照射被該同質裝置基板上之一吸收層強烈吸收且包括將該吸收層曝露於該雷射照射以至少部分地分解或以其他方式形成可起始該同質裝置基板與用於該雷射剝離程序之微組裝之該等裝置之間的分離之一介面。
- 一種經由一中間基板自一同質藍寶石基板準備用於微組裝之多個經釋放材料之方法,該方法包括:將一或多個材料沈積在該同質藍寶石基板上以形成一磊晶材料;在該同質藍寶石基板上用該磊晶材料形成多個裝置;形成不溶於用於將用於微組裝之該等材料自該中間基板釋放之一蝕刻劑之一拴繫結構,其中該拴繫結構接觸與該同質藍寶石基板相對之該裝置之一側且接觸經曝露之該同質藍寶石基板之僅一部分;形成多個經圖案化犧牲層,其係在與該同質藍寶石基板相對之該等裝置之一側上完全在該等裝置及該拴繫結構上方、在接觸經曝露之該同質藍寶石基板之該栓繫結構之僅一部分上方或不在該栓繫結構上方、且僅部分接觸經曝露之該同質藍寶石基板,該等經圖案化犧牲層可自該同質藍寶石基板及該栓繫結構差異地蝕刻;將用於微組裝之該等材料黏附至一中間基板以形成一經接合基板對;執行一雷射剝離程序,藉此將用於微組裝之該等材料與該同質藍寶石基板分離及將該經接合基板對分離,其中:藉此反轉用於微組裝之該等材料,且該藍寶石基板對雷射照射係透明的,該雷射照射被該藍寶石基板上之一吸收層強烈吸收使得在曝露於該雷射照射時該吸收層至少部分地分解或以其他方式形成可起始該藍寶石基板與用於微組裝之該等材料之間的分離之一介面;及藉由移除一犧牲層之至少一部分以將用於微組裝之該等材料自該中間基板釋放,藉此將在該等可釋放結構下方的該可選擇性移除層移除並經由該中間基板自多個藍寶石同質基板形成多個經釋放可微組裝GaN材料或裝置。
- 如請求項21之方法,其包括:將該中間基板上之用於微組裝之該等經釋放材料轉印至一中間印模,藉此以微組裝之一不同非反轉組態呈現用於微組裝之該等材料。
- 如請求項21之方法,其中形成錨定、拴繫及囊封結構可選擇性移除層之該至少一者係在將用於微組裝之該等材料黏附至該中間基板之前完成。
- 一種使用具有一經控制厚度之一中間基板自一同質裝置基板準備用於微組裝之多個可印刷材料之方法,該方法包括:將一或多種材料沈積在該同質裝置基板上,藉此形成一磊晶材料;用在該同質裝置基板上的該磊晶材料形成多個裝置;藉由將該磊晶材料之至少一部分自該磊晶材料中之該等裝置之至少一部分周圍移除以形成包括該等裝置之多個可釋放結構,藉此部分地曝露該同質裝置基板;將該磊晶材料暫時接合至具有該經控制厚度之一中間基板;將該磊晶材料自該同質裝置基板分離且藉此反轉用於微組裝之該磊晶材料;及將該中間基板上之用於微組裝之經釋放之該等材料轉印至一中間印模,該中間印模也具有經控制厚度,使得該中間印模可將用於微組裝之該等材料自該中間基板移除。
- 如請求項24之方法,其包括至少部分地完成多個裝置在該中間基板上之該形成或劃界。
- 如請求項25之方法,其中該同質裝置基板對雷射照射係透明的,該雷射照射被該同質裝置基板上之一吸收層強烈吸收且包括將該吸收層曝露於該雷射照射以至少部分地分解或以其他方式形成可起始該同質裝置基板與用於該雷射剝離程序之微組裝之該等裝置之間的分離之一介面。
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US20180254376A1 (en) | 2018-09-06 |
TW201614860A (en) | 2016-04-16 |
US9991413B2 (en) | 2018-06-05 |
US10312405B2 (en) | 2019-06-04 |
KR20170044638A (ko) | 2017-04-25 |
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