CN115485864A - 微发光元件、微发光二极管及其转印方法 - Google Patents

微发光元件、微发光二极管及其转印方法 Download PDF

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Publication number
CN115485864A
CN115485864A CN202180001719.5A CN202180001719A CN115485864A CN 115485864 A CN115485864 A CN 115485864A CN 202180001719 A CN202180001719 A CN 202180001719A CN 115485864 A CN115485864 A CN 115485864A
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Prior art keywords
micro
layer
micro light
emitting diode
light
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CN202180001719.5A
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Inventor
王彦钦
陈劲华
郭桓邵
李水清
黄少华
彭钰仁
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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    • H01L2933/0025Processes relating to coatings
    • HELECTRICITY
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
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    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

本发明公开微发光元件,微发光二极管及其转印方法,其中微发光元件包括:若干个微发光二极管,微发光二极管包括:半导体外延叠层,所述半导体外延叠层包含第一类型半导体层、第二类型半导体层和两者之间的有源层;第一台面,由半导体外延叠层凹陷露出的第一类型半导体层构成,第二台面,由第二类型半导体层构成;绝缘介质层,位于所述半导体外延叠层的第一台面和第二台面上;基架,位于所述微发光二极管下方,支撑所述微发光二极管;桥臂,用于连接微发光二极管和基架,所述微发光二极管搭接在两侧桥臂之间;其特征在于:所述桥臂的厚度小于所述第一台面上的绝缘介质层的厚度。本发明通过桥臂厚度和形状的设计,可提升微发光二极管的转移良率。

Description

PCT国内申请,说明书已公开。

Claims (20)

  1. PCT国内申请,权利要求书已公开。
CN202180001719.5A 2021-03-29 2021-03-29 微发光元件、微发光二极管及其转印方法 Pending CN115485864A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/083621 WO2022204879A1 (zh) 2021-03-29 2021-03-29 微发光元件、微发光二极管及其转印方法

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CN115485864A true CN115485864A (zh) 2022-12-16

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US (1) US20230155071A1 (zh)
CN (1) CN115485864A (zh)
WO (1) WO2022204879A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9761754B2 (en) * 2014-06-18 2017-09-12 X-Celeprint Limited Systems and methods for preparing GaN and related materials for micro assembly
US9640715B2 (en) * 2015-05-15 2017-05-02 X-Celeprint Limited Printable inorganic semiconductor structures
TWI618266B (zh) * 2016-09-07 2018-03-11 友達光電股份有限公司 微型發光二極體單元之中介結構及其製造方法、微型發光二極體單元及其製造方法與微型發光二極體裝置
DE102017106730A1 (de) * 2017-03-29 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bauteils und Bauteil für ein elektronisches Bauelement
CN107785502B (zh) * 2017-10-23 2019-05-14 京东方科技集团股份有限公司 一种oled显示面板及其封装方法
CN109103315B (zh) * 2018-07-28 2020-09-11 厦门三安光电有限公司 发光组件、微发光二极管及其显示装置
CN111933627A (zh) * 2020-09-14 2020-11-13 厦门乾照半导体科技有限公司 可测试及微转移的微元件及其制作、测试和转移方法、显示装置

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US20230155071A1 (en) 2023-05-18
WO2022204879A1 (zh) 2022-10-06

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