JP2012109571A - 3次元半導体素子及びその製造方法 - Google Patents
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Abstract
【解決手段】3次元(3D)半導体メモリー素子は、基板に隣接する下段から上段まで伸張して、複数個のメモリーセルと連結された垂直チャンネルと、前記複数個のメモリーセルを有し、前記基板上に配置された階段形構造のゲートスタック形態にアレイされたセルアレイと、を含む。前記ゲートスタックは、前記下段に隣接する下部非メモリートランジスターに連結された下部選択ラインを含む下部膜と、前記上段に隣接する上部非メモリートランジスターに各々連結され、互いに連結されて単一の導電性ピースになって上部選択ラインをなす導電ラインを有する複数個の上部膜と、各々ワードラインを有し、セルトランジスターと連結され、前記下部選択ラインと前記上部選択ラインの間に配置される複数個の中間膜と、を含む。
【選択図】図1A
Description
76 非メモリートランジスター
101 絶縁膜
103 犠牲膜
104 チャンネルホール
105 ゲートスタック
110 垂直チャンネル
115 メモリートランジスター又はメモリーセル
135 ワードラインカット
137 コンタクトホール
140 情報格納膜
141 トンネル絶縁膜
143 電荷絶縁膜
145 ブロッキング絶縁膜
150 ゲート
160,161 コンタクト
162 コンタクトパッド
170 ビットライン
180 金属ライン
190 半導体基板
WL ワードライン
SSL ストリング選択ライン
GSL 接地選択ライン
Claims (30)
- 基板の上に複数個の膜が垂直積層された形態にアレイされたメモリーセルと、
少なくとも一方が互いに連結されて1つの導電性ピースになる、複数個の垂直積層された上部非メモリーセル及び下部非メモリーセルと、を含む三次元半導体メモリー素子であって、
前記メモリーセルは垂直チャンネルによって直列連結され、前記垂直チャンネルは前記基板に隣接し、前記下部非メモリーセルと連結された下段から前記上部非メモリーセルと連結された上段まで伸張され、前記複数個の膜は階段形構造をなし、前記複数個の膜の各々はパッドとして利用される連続的に端部を含むことを特徴とする、3次元半導体メモリー素子。 - 前記複数個の垂直積層された非メモリーセルは、前記複数個の垂直積層された非メモリーセルの中の1つを含む前記複数個の膜の中の1つのパッドから垂直伸張する導電体によって連結された、請求項1に記載の3次元半導体メモリー素子。
- 前記導電体は前記複数個の垂直積層非メモリーセルの各ゲートの縁を垂直連結する、請求項2に記載の3次元半導体メモリー素子。
- 前記複数個の膜の中の1つの膜のパッドと接する複数個のコンタクトをさらに含み、
前記複数個のコンタクトの中の1つのコンタクトは伸張されて前記最上層非メモリーセルを含む前記複数個の膜の中の1つの膜のパッドと接触して貫通する、請求項3に記載の3次元半導体メモリー素子。 - 基板に隣接する下段から上段まで伸張して、複数個のメモリーセルと連結された垂直チャンネルと、
前記複数個のメモリーセルを有し、前記基板の上に配置された階段形構造のゲートスタック形態にアレイされたセルアレイと、を含み、
前記ゲートスタックは、
前記下段に隣接する下部非メモリートランジスターに連結された下部選択ラインを含む下部膜と、
前記上段に隣接する上部非メモリートランジスターに各々連結され、互いに連結されて単一の導電性ピースになって上部選択ラインをなす導電ラインを有する複数個の上部膜と、
各々のワードラインを有し、そしてセルトランジスターと連結される複数個の中間膜と、を含み、前記複数個の中間膜は前記下部選択ラインと前記上部選択ラインとの間に配置される、3次元半導体メモリー素子。 - 前記下部膜は前記複数個の中間膜によって露出された前記下部膜の端部である下部パッドを含み、
前記複数個の中間膜は連続的に露出された中間パッドを各々含み、
前記複数個の上部膜は各々複数個の上部パッドの中の1つを含み、前記複数個の上部膜内で上部パッドは互いにオーバーレイされた、請求項5に記載の3次元半導体メモリー素子。 - 前記下部パッドと前記複数個の上部パッドとの中の少なくとも1つは前記中間パッドの中のいずれか1つに比べて広い、請求項6に記載の3次元半導体メモリー素子。
- 前記複数個の上部膜は、
第1上部非メモリートランジスターと連結された第1導電ラインと第1パッドとを含む第1上部膜と、
前記第1上部膜の下に配置される、第2上部非メモリートランジスターと連結された第2導電ラインと第2パッドを含む第2上部膜と、を含む、請求項5に記載の3次元半導体メモリー素子。 - 前記第1及び第2パッドは電気的に連結され、互いに直接的にオーバーレイされた、請求項8に記載の3次元半導体メモリー素子。
- 前記第2上部膜から伸張されて前記第1上部膜を貫通する垂直導電体をさらに含む、請求項9に記載の3次元半導体メモリー素子。
- 前記第2パッドは前記第1パッドによって露出され、
前記半導体素子は、
前記第1パッドから垂直伸張された第1導電体と、
前記第2パッドから垂直伸張された第2導電体と、を含み、
前記第1及び第2導電ラインは前記第1及び第2導電体によって連結された、請求項8に記載の3次元半導体メモリー素子。 - 前記下部パッドは前記上部パッドに比べて広い、請求項6に記載の3次元半導体メモリー素子。
- 前記下部選択ラインは接地選択ラインであり、前記上部選択ラインはストリング選択ラインである、請求項5に記載の3次元半導体メモリー素子。
- 基板に隣接する下段から上段まで伸張して、複数個のメモリーセルと連結された垂直チャンネルと、
前記複数個のメモリーセルを有し、前記基板上に配置された階段形構造のゲートスタック形態にアレイされたセルアレイと、を含み、
前記ゲートスタックは、
互いに連結されて第2導電性ピースになって下部選択ラインを成し、前記下段に隣接する下部非メモリートランジスターに連結される導電体を各々含む複数個の下部膜と、
互いに連結されて単一の導電性ピースになって上部選択ラインを成し、前記上段に隣接する上部非メモリートランジスターに連結される導電体を各々含む複数個の上部膜と、
各々セルトランジスターと連結されたワードラインを含み、前記下部選択ラインと前記上部選択ラインとの間に配置される複数個の中間膜と、を含む、3次元半導体メモリー素子。 - 前記複数個の下部膜は、
第1下部パッドを有する第1下部膜と、
第2下部パッドを有し、前記第1下部膜上に配置された第2下部膜と、を含む、請求項14に記載の3次元半導体メモリー素子。 - 前記第1及び第2下部パッドは電気的に連結され、互いにオーバーレイされ、前記半導体素子は前記第2下部パッドから垂直伸張される導電体をさらに含む、請求項15に記載の3次元半導体メモリー素子。
- 前記第1下部パッドは前記第2下部膜によって露出され、前記半導体素子は前記第1下部パッドから垂直伸張される第1導電体と前記第2下部パッドから垂直伸張される第2導電体とをさらに含む、請求項15に記載の3次元半導体メモリー素子。
- 前記第1及び第2下部パッドの中の少なくとも1つは、各々前記複数個の中間膜と連結された複数個の中間パッドの中のいずれか1つに比べて広い、請求項15に記載の3次元半導体メモリー素子。
- 前記下部選択ラインは接地選択ラインであり、前記上部選択ラインはストリング選択ラインである、請求項14に記載の3次元半導体メモリー素子。
- 基板から伸張される複数個の垂直チャンネルを形成する工程と、
各々ゲートを含む複数個の膜を垂直積層して階段構造を有するゲートスタックを形成する工程と、を含み、
前記複数個の膜の中で最上層膜と最下層膜の中の少なくとも1つは導電体によって連結された隣接する多重膜を含む、半導体素子の製造方法。 - 前記ゲートスタックを形成する工程は、
前記基板上に互いに離隔された複数個の犠牲膜を積層して第1モールドスタックを形成する工程と、
前記第1モールドスタックをパターニングして前記階段の構造を形成する工程と、
前記犠牲膜を導電膜で代替してゲートを形成する工程と、を含む、請求項20に記載の半導体素子の製造方法。 - 前記第1モールドスタックの前記階段の構造を形成する工程は、
順次縮小されるか、或いは拡大されるマスクを利用する蝕刻工程を順次に進行して前記階段の構造の一部を反複形成することによって、前記複数個の犠牲膜を順次にパターニングする工程を含む、請求項21に記載の半導体素子の製造方法。 - 前記導電体を形成する工程をさらに含み、
前記導電体を形成する工程は、
前記犠牲膜の中で最上層の第1犠牲膜と前記第1犠牲膜の下に隣接配置された第2犠牲膜を同時にパターニングして離隔された第1及び第2犠牲膜パターンを形成する工程と、
前記第1及び第2犠牲膜パターンの側面と接触する第1連結膜パターンを形成する工程と、
前記第1及び第2犠牲膜パターンと前記第1連結膜パターンとを前記導電膜で代替して前記第1及び第2犠牲膜パターンからは多重膜を構成する第1及び第2ゲートを形成し、前記第1連結膜パターンからは前記導電体を形成する工程と、を含む、請求項22に記載の半導体素子の製造方法。 - 前記第1連結膜パターンを形成する工程は、
前記第1モールドスタック上に前記犠牲膜と同一な組成及び同一な蝕刻選択比の中の少なくとも1つを有する物質で第1連結膜を形成して前記第1及び第2犠牲膜パターンを覆う工程と、
前記第1連結膜を異方性蝕刻して前記第1及び第2犠牲膜パターンの側面の上に前記第1連結膜パターンを形成する工程と、を含む、請求項23に記載の半導体素子の製造方法。 - 前記第1及び第2犠牲膜の厚さの中の少なくとも1つは他の犠牲膜の厚さと相異なる、請求項23に記載の半導体素子の製造方法。
- 前記ゲートスタックを形成する工程は、
前記基板の上に離隔された複数個の導電性膜を積層して第2モールドスタックを形成する工程と、
前記第2モールドスタックをパターニングして前記階段の構造を形成する工程と、を含む、請求項21に記載の半導体素子の製造方法。 - 前記第2モールドスタックの前記階段の構造を形成する工程は、
順次縮小されるか、或いは拡大されるマスクを利用する蝕刻工程を順次に進行して前記階段の構造の一部を反複形成することによって、前記複数個の導電性膜を順次にパターニングする工程を含む、請求項26に記載の半導体素子の製造方法。 - 前記導電体を形成する工程をさらに含み、
前記導電体を形成する工程は、
前記導電性膜の中で最上層の第1導電性膜と前記第1導電性膜下に隣接配置された第2導電性膜を同時にパターニングして離隔された第1及び第2導電性膜パターンを形成する工程と、
前記第1及び第2導電性膜パターンの側面と接触する第2連結膜パターンを形成する工程と、を含む、請求項26に記載の半導体素子の製造方法。 - 前記第2連結膜パターンを形成する工程は、
前記第2モールドスタックの上に前記導電性膜と同一な組成を有する物質で第2連結膜を形成して前記第1及び第2導電性膜パターンを覆う工程と、
前記第2連結膜を異方性蝕刻して前記第1及び第2導電性膜パターンの側面上に前記第2連結膜パターンを形成する工程と、を含む、請求項28に記載の半導体素子の製造方法。 - 前記第1及び第2導電性膜の厚さは他の導電性膜の厚さと相異なる、請求項21に記載の製造方法。
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JP5825988B2 (ja) | 2015-12-02 |
DE102011086171A1 (de) | 2012-05-24 |
US9355913B2 (en) | 2016-05-31 |
US8564050B2 (en) | 2013-10-22 |
KR20120053329A (ko) | 2012-05-25 |
KR101744127B1 (ko) | 2017-06-08 |
CN102468282B (zh) | 2016-08-24 |
CN102468282A (zh) | 2012-05-23 |
US20140038400A1 (en) | 2014-02-06 |
US20120119287A1 (en) | 2012-05-17 |
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