AU2001272740A1 - Image display unit and production method for image display unit - Google Patents

Image display unit and production method for image display unit

Info

Publication number
AU2001272740A1
AU2001272740A1 AU2001272740A AU7274001A AU2001272740A1 AU 2001272740 A1 AU2001272740 A1 AU 2001272740A1 AU 2001272740 A AU2001272740 A AU 2001272740A AU 7274001 A AU7274001 A AU 7274001A AU 2001272740 A1 AU2001272740 A1 AU 2001272740A1
Authority
AU
Australia
Prior art keywords
display unit
image display
production method
image
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001272740A
Other languages
English (en)
Inventor
Masato Doi
Toshiaki Iwafuchi
Toyoharu Oohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of AU2001272740A1 publication Critical patent/AU2001272740A1/en
Abandoned legal-status Critical Current

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    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • Y10S438/982—Varying orientation of devices in array
AU2001272740A 2000-07-18 2001-07-18 Image display unit and production method for image display unit Abandoned AU2001272740A1 (en)

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Families Citing this family (380)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW494447B (en) * 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP4649745B2 (ja) 2001-02-01 2011-03-16 ソニー株式会社 発光素子の転写方法
JP4724924B2 (ja) * 2001-02-08 2011-07-13 ソニー株式会社 表示装置の製造方法
JP3608615B2 (ja) * 2001-04-19 2005-01-12 ソニー株式会社 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
JP2003045901A (ja) * 2001-08-01 2003-02-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US6934001B2 (en) * 2001-08-13 2005-08-23 Sharp Laboratories Of America, Inc. Structure and method for supporting a flexible substrate
JP2003077940A (ja) * 2001-09-06 2003-03-14 Sony Corp 素子の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
JP4055405B2 (ja) * 2001-12-03 2008-03-05 ソニー株式会社 電子部品及びその製造方法
JP2003282478A (ja) 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法
JP3912117B2 (ja) * 2002-01-17 2007-05-09 ソニー株式会社 結晶成長方法、半導体発光素子及びその製造方法
JP3815335B2 (ja) * 2002-01-18 2006-08-30 ソニー株式会社 半導体発光素子及びその製造方法
FR2836158B1 (fr) * 2002-02-19 2005-01-07 Usinor Procede de nettoyage par plasma de la surface d'un materiau enduit d'une substance organique, et installation de mise en oeuvre
WO2003076119A1 (en) 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Method of cutting processed object
CN100355031C (zh) 2002-03-12 2007-12-12 浜松光子学株式会社 基板的分割方法
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
JP4329368B2 (ja) * 2002-03-28 2009-09-09 セイコーエプソン株式会社 半導体装置及びその製造方法
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2004014938A (ja) * 2002-06-10 2004-01-15 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
JP3864222B2 (ja) * 2002-09-26 2006-12-27 国立大学法人名古屋大学 半導体素子構造、電子エミッタ及び半導体素子構造の製造方法
JP5022552B2 (ja) 2002-09-26 2012-09-12 セイコーエプソン株式会社 電気光学装置の製造方法及び電気光学装置
CN1293602C (zh) * 2002-10-08 2007-01-03 精工爱普生株式会社 电路板及其制造方法、复制芯片、复制源基板、电光装置
JP3918708B2 (ja) 2002-10-08 2007-05-23 セイコーエプソン株式会社 回路基板及びその製造方法、転写チップ、転写元基板、電気光学装置、電子機器
WO2004047057A1 (ja) * 2002-11-19 2004-06-03 Ishikawa Seisakusho,Ltd. 画素制御素子の選択転写方法、画素制御素子の選択転写方法に使用される画素制御素子の実装装置、画素制御素子転写後の配線形成方法、及び、平面ディスプレイ基板
JP4097510B2 (ja) * 2002-11-20 2008-06-11 株式会社沖データ 半導体装置の製造方法
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US7087444B2 (en) * 2002-12-16 2006-08-08 Palo Alto Research Center Incorporated Method for integration of microelectronic components with microfluidic devices
US7652359B2 (en) * 2002-12-27 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Article having display device
JP3702879B2 (ja) * 2003-02-21 2005-10-05 セイコーエプソン株式会社 電気光学パネル、その駆動回路及び駆動方法、並びに電子機器
JP4082242B2 (ja) * 2003-03-06 2008-04-30 ソニー株式会社 素子転写方法
FR2852250B1 (fr) * 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
CN1758985A (zh) * 2003-03-12 2006-04-12 浜松光子学株式会社 激光加工方法
US6986693B2 (en) 2003-03-26 2006-01-17 Lucent Technologies Inc. Group III-nitride layers with patterned surfaces
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US6913985B2 (en) * 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US7961160B2 (en) 2003-07-31 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device
JP4380264B2 (ja) * 2003-08-25 2009-12-09 カシオ計算機株式会社 接合基板及び基板の接合方法
US7566001B2 (en) 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
JP4326889B2 (ja) * 2003-09-11 2009-09-09 株式会社沖データ 半導体装置、ｌｅｄプリントヘッド、画像形成装置、及び半導体装置の製造方法
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7341880B2 (en) 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
JP2005111976A (ja) * 2003-09-18 2005-04-28 Ricoh Co Ltd 消耗部品、部品装着構造、及び画像形成装置
JP4834951B2 (ja) * 2003-09-29 2011-12-14 ソニー株式会社 Ｌｅｄ素子形成方法
EP1521312A3 (de) * 2003-09-30 2008-01-16 Osram Opto Semiconductors GmbH Optoelektronisches Bauelement mit einem metallisierten Träger
JP4672329B2 (ja) * 2003-10-22 2011-04-20 株式会社沖データ 半導体装置、及び、それを用いたｌｅｄプリントヘッド、画像形成装置、半導体装置の製造方法
US7408566B2 (en) * 2003-10-22 2008-08-05 Oki Data Corporation Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device
US7294961B2 (en) * 2004-03-29 2007-11-13 Articulated Technologies, Llc Photo-radiation source provided with emissive particles dispersed in a charge-transport matrix
US20070090387A1 (en) * 2004-03-29 2007-04-26 Articulated Technologies, Llc Solid state light sheet and encapsulated bare die semiconductor circuits
US7217956B2 (en) * 2004-03-29 2007-05-15 Articulated Technologies, Llc. Light active sheet material
US20050244618A1 (en) * 2004-04-30 2005-11-03 Brian Gobrogge Islanded pattern for printing on readdressable media
KR100595884B1 (ko) * 2004-05-18 2006-07-03 엘지전자 주식회사 질화물 반도체 소자 제조 방법
CN1868200B (zh) 2004-06-08 2012-03-21 苹果公司 便携式设备
TWI308397B (en) * 2004-06-28 2009-04-01 Epistar Corp Flip-chip light emitting diode and fabricating method thereof
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
JP4596846B2 (ja) * 2004-07-29 2010-12-15 三洋電機株式会社 回路装置の製造方法
JP4812369B2 (ja) * 2004-08-27 2011-11-09 京セラ株式会社 発光素子の製造方法
JP3802910B2 (ja) * 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
JP4729896B2 (ja) * 2004-09-17 2011-07-20 ソニー株式会社 半導体薄膜の表面処理方法
TWI308396B (en) * 2005-01-21 2009-04-01 Epistar Corp Light emitting diode and fabricating method thereof
US7875898B2 (en) * 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
WO2006095566A1 (en) * 2005-03-09 2006-09-14 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
US7364983B2 (en) * 2005-05-04 2008-04-29 Avery Dennison Corporation Method and apparatus for creating RFID devices
US7215032B2 (en) 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US8456015B2 (en) 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
US7942182B2 (en) 2005-06-14 2011-05-17 Cufer Asset Ltd. L.L.C. Rigid-backed, membrane-based chip tooling
US20060286686A1 (en) * 2005-06-15 2006-12-21 Honeywell International, Inc. Integrated light emitting diode displays using biofabrication
US7608471B2 (en) * 2005-08-09 2009-10-27 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for integrating III-V semiconductor devices into silicon processes
KR100835053B1 (ko) * 2006-01-05 2008-06-03 삼성전기주식회사 반도체 발광 소자를 이용한 플렉서블 디스플레이 및 그제조 방법
US8013320B2 (en) * 2006-03-03 2011-09-06 Panasonic Corporation Nitride semiconductor device and method for fabricating the same
JP5108381B2 (ja) * 2006-05-31 2012-12-26 株式会社半導体エネルギー研究所 貼りあわせ方法、貼りあわせ装置、半導体装置の作製方法及び半導体装置の製造装置
KR101278065B1 (ko) 2006-09-12 2013-06-24 삼성디스플레이 주식회사 표시기판의 제조방법
US20080080163A1 (en) * 2006-09-29 2008-04-03 Grote Industries, Inc. Illuminated devices utilizing light active sheet material with integrated light emitting diode (LED), methods of producing illuminated devices, and kits therefor
KR20080037848A (ko) * 2006-10-27 2008-05-02 삼성전자주식회사 광차단막을 갖는 반도체 레이저 소자의 제조방법
DE102006054206A1 (de) * 2006-11-15 2008-05-21 Till Keesmann Feldemissionsvorrichtung
CN101617406B (zh) * 2007-01-17 2011-04-20 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
US7858493B2 (en) * 2007-02-23 2010-12-28 Finisar Corporation Cleaving edge-emitting lasers from a wafer cell
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
JP2007259470A (ja) * 2007-04-25 2007-10-04 Mitsubishi Electric Corp 携帯機器
US7867793B2 (en) * 2007-07-09 2011-01-11 Koninklijke Philips Electronics N.V. Substrate removal during LED formation
JP5032231B2 (ja) * 2007-07-23 2012-09-26 リンテック株式会社 半導体装置の製造方法
US8187900B2 (en) * 2007-08-10 2012-05-29 Hong Kong Applied Science and Technology Research Institute Company Limited Optimization of polishing stop design
US8222064B2 (en) 2007-08-10 2012-07-17 Hong Kong Applied Science and Technology Research Institute Company Limited Vertical light emitting diode device structure and method of fabricating the same
US7846753B2 (en) * 2007-08-10 2010-12-07 Hong Kong Applied Science And Technology Research Institute Vertical light emitting diode and method of making a vertical light emitting diode
JP4450046B2 (ja) 2007-10-05 2010-04-14 ソニー株式会社 電子部品基板の製造方法
JP4840371B2 (ja) * 2008-01-28 2011-12-21 ソニー株式会社 素子転写方法
US8182633B2 (en) * 2008-04-29 2012-05-22 Samsung Electronics Co., Ltd. Method of fabricating a flexible display device
TWI407491B (zh) * 2008-05-09 2013-09-01 Advanced Optoelectronic Tech 分離半導體及其基板之方法
WO2009143462A2 (en) * 2008-05-22 2009-11-26 Vi Systems Gmbh Method for attaching optical components onto silicon-based integrated circuits
WO2010014032A1 (en) * 2008-07-07 2010-02-04 Glo Ab A nanostructured LED
JP5215773B2 (ja) * 2008-08-18 2013-06-19 株式会社ディスコ 加工方法
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
JP5390832B2 (ja) * 2008-11-04 2014-01-15 キヤノン株式会社 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP5276412B2 (ja) * 2008-11-04 2013-08-28 キヤノン株式会社 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
JP5363789B2 (ja) * 2008-11-18 2013-12-11 スタンレー電気株式会社 光半導体装置
JP4640498B2 (ja) * 2008-12-11 2011-03-02 ソニー株式会社 素子の転写方法、素子配置基板、並びにデバイス及びその製造方法
TWI473246B (zh) * 2008-12-30 2015-02-11 Epistar Corp 發光二極體晶粒等級封裝
US8309973B2 (en) * 2009-02-12 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-based sub-mount for an opto-electronic device
JP5128518B2 (ja) 2009-02-24 2013-01-23 株式会社沖データ 表示装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
JP5258666B2 (ja) * 2009-04-22 2013-08-07 株式会社半導体エネルギー研究所 発光装置の作製方法および成膜用基板
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US8680629B2 (en) * 2009-06-03 2014-03-25 International Business Machines Corporation Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
JP5590837B2 (ja) * 2009-09-15 2014-09-17 キヤノン株式会社 機能性領域の移設方法
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
CN102630349B (zh) 2009-09-18 2017-06-13 天空公司 功率发光二极管及利用电流密度操作的方法
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
US8274116B2 (en) * 2009-11-16 2012-09-25 International Business Machines Corporation Control of threshold voltages in high-k metal gate stack and structures for CMOS devices
KR101221871B1 (ko) * 2009-12-07 2013-01-15 한국전자통신연구원 반도체 소자의 제조방법
TWI397989B (zh) * 2009-12-07 2013-06-01 Epistar Corp 發光二極體陣列
US8283676B2 (en) * 2010-01-21 2012-10-09 Siphoton Inc. Manufacturing process for solid state lighting device on a conductive substrate
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
WO2011125311A1 (ja) * 2010-04-01 2011-10-13 パナソニック株式会社 発光ダイオード素子および発光ダイオード装置
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
JP5419226B2 (ja) 2010-07-29 2014-02-19 日東電工株式会社 フリップチップ型半導体裏面用フィルム及びその用途
WO2012039266A1 (ja) * 2010-09-21 2012-03-29 コニカミノルタホールディングス株式会社 圧電デバイスおよびその製造方法
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
JP5652234B2 (ja) * 2011-02-07 2015-01-14 日亜化学工業株式会社 半導体発光素子
TWI432862B (zh) * 2011-03-16 2014-04-01 Hannstar Display Corp 液晶面板及其畫素結構
JP5825812B2 (ja) * 2011-03-24 2015-12-02 株式会社Ｊｏｌｅｄ 表示装置の製造方法
JP4989773B1 (ja) * 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
DE102011106104B4 (de) * 2011-06-09 2014-04-10 Otto Bock Healthcare Products Gmbh Verfahren zum Herstellen bestückter Leiterplatten
US9306117B2 (en) 2011-07-25 2016-04-05 Industrial Technology Research Institute Transfer-bonding method for light emitting devices
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
FR2980919B1 (fr) * 2011-10-04 2014-02-21 Commissariat Energie Atomique Procede de double report de couche
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8794501B2 (en) 2011-11-18 2014-08-05 LuxVue Technology Corporation Method of transferring a light emitting diode
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8518204B2 (en) * 2011-11-18 2013-08-27 LuxVue Technology Corporation Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9773750B2 (en) 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
WO2013134432A1 (en) 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
KR101291092B1 (ko) * 2012-04-06 2013-08-01 주식회사 씨티랩 반도체 소자 구조물을 제조하는 방법
WO2013151387A1 (ko) * 2012-04-06 2013-10-10 주식회사 씨티랩 반도체 소자 구조물을 제조하는 방법
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US9608016B2 (en) * 2012-05-17 2017-03-28 Koninklijke Philips N.V. Method of separating a wafer of semiconductor devices
US9034754B2 (en) 2012-05-25 2015-05-19 LuxVue Technology Corporation Method of forming a micro device transfer head with silicon electrode
US8415771B1 (en) 2012-05-25 2013-04-09 LuxVue Technology Corporation Micro device transfer head with silicon electrode
EP2860759B1 (en) * 2012-06-06 2019-03-06 Kabushiki Kaisha Nihon Micronics Electrode structure of solid type rechargeable battery
JP2014013818A (ja) * 2012-07-04 2014-01-23 Sony Corp デバイスおよび電子装置
US8415768B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant monopolar micro device transfer head with silicon electrode
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
US8383506B1 (en) 2012-07-06 2013-02-26 LuxVue Technology Corporation Method of forming a compliant monopolar micro device transfer head with silicon electrode
US8415767B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant bipolar micro device transfer head with silicon electrodes
US8933433B2 (en) 2012-07-30 2015-01-13 LuxVue Technology Corporation Method and structure for receiving a micro device
US9356070B2 (en) 2012-08-15 2016-05-31 Epistar Corporation Light-emitting device
US20140048824A1 (en) 2012-08-15 2014-02-20 Epistar Corporation Light-emitting device
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
CN103797531A (zh) * 2012-09-10 2014-05-14 深圳市柔宇科技有限公司 一种大尺寸显示屏及其制造方法
US8941215B2 (en) 2012-09-24 2015-01-27 LuxVue Technology Corporation Micro device stabilization post
US8835940B2 (en) 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
US8946052B2 (en) * 2012-09-26 2015-02-03 Sandia Corporation Processes for multi-layer devices utilizing layer transfer
DE102012217957B4 (de) * 2012-10-01 2014-10-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Mikro-LED-Matrix
DE102012109460B4 (de) * 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
JP5602207B2 (ja) * 2012-10-30 2014-10-08 株式会社沖データ 表示装置
JP5988489B2 (ja) * 2012-10-31 2016-09-07 Ｄｏｗａエレクトロニクス株式会社 半導体素子およびその製造方法
CN103811593B (zh) 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
US9029880B2 (en) 2012-12-10 2015-05-12 LuxVue Technology Corporation Active matrix display panel with ground tie lines
US9159700B2 (en) 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US9178123B2 (en) 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
US9255001B2 (en) 2012-12-10 2016-02-09 LuxVue Technology Corporation Micro device transfer head array with metal electrodes
US9105714B2 (en) 2012-12-11 2015-08-11 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging bollards
US9166114B2 (en) 2012-12-11 2015-10-20 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging cavity
US9391042B2 (en) * 2012-12-14 2016-07-12 Apple Inc. Micro device transfer system with pivot mount
US9314930B2 (en) 2012-12-14 2016-04-19 LuxVue Technology Corporation Micro pick up array with integrated pivot mount
US9153171B2 (en) 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
KR20140089014A (ko) 2012-12-31 2014-07-14 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US9054235B2 (en) 2013-01-22 2015-06-09 Micron Technology, Inc. Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
KR102037866B1 (ko) * 2013-02-05 2019-10-29 삼성전자주식회사 전자장치
US9095980B2 (en) 2013-02-25 2015-08-04 LuxVue Technology Corporation Micro pick up array mount with integrated displacement sensor
US9308649B2 (en) 2013-02-25 2016-04-12 LuxVue Techonology Corporation Mass transfer tool manipulator assembly
USD758372S1 (en) * 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
US9888283B2 (en) 2013-03-13 2018-02-06 Nagrastar Llc Systems and methods for performing transport I/O
USD759022S1 (en) * 2013-03-13 2016-06-14 Nagrastar Llc Smart card interface
USD729808S1 (en) * 2013-03-13 2015-05-19 Nagrastar Llc Smart card interface
US8791474B1 (en) 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US9252375B2 (en) 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9484504B2 (en) 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
KR102049635B1 (ko) 2013-06-12 2019-11-28 로히니, 엘엘씨. 피착된 광-생성 소스에 의한 키보드 백라이팅
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US8928021B1 (en) 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9111464B2 (en) 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
KR102059133B1 (ko) * 2013-07-31 2019-12-24 삼성전자주식회사 GaN 베이스 발광소자와 기계적 후처리를 이용한 그 제조방법
KR101513641B1 (ko) * 2013-08-20 2015-04-22 엘지전자 주식회사 표시장치
US9153548B2 (en) 2013-09-16 2015-10-06 Lux Vue Technology Corporation Adhesive wafer bonding with sacrificial spacers for controlled thickness variation
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
CN113035850B (zh) 2014-06-18 2022-12-06 艾克斯展示公司技术有限公司 微组装led显示器
US11472171B2 (en) * 2014-07-20 2022-10-18 X Display Company Technology Limited Apparatus and methods for micro-transfer-printing
GB201413578D0 (en) 2014-07-31 2014-09-17 Infiniled Ltd A colour iled display on silicon
US9716082B2 (en) 2014-08-26 2017-07-25 X-Celeprint Limited Micro assembled hybrid displays and lighting elements
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
US9537069B1 (en) 2014-09-25 2017-01-03 X-Celeprint Limited Inorganic light-emitting diode with encapsulating reflector
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US10319878B2 (en) 2014-10-31 2019-06-11 eLux, Inc. Stratified quantum dot phosphor structure
US10242977B2 (en) 2014-10-31 2019-03-26 eLux, Inc. Fluid-suspended microcomponent harvest, distribution, and reclamation
US10446728B2 (en) 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
US10535640B2 (en) 2014-10-31 2020-01-14 eLux Inc. System and method for the fluidic assembly of micro-LEDs utilizing negative pressure
US10520769B2 (en) 2014-10-31 2019-12-31 eLux, Inc. Emissive display with printed light modification structures
US10381332B2 (en) 2014-10-31 2019-08-13 eLux Inc. Fabrication method for emissive display with light management system
US10543486B2 (en) 2014-10-31 2020-01-28 eLux Inc. Microperturbation assembly system and method
US10381335B2 (en) 2014-10-31 2019-08-13 ehux, Inc. Hybrid display using inorganic micro light emitting diodes (uLEDs) and organic LEDs (OLEDs)
US10236279B2 (en) 2014-10-31 2019-03-19 eLux, Inc. Emissive display with light management system
US10418527B2 (en) 2014-10-31 2019-09-17 eLux, Inc. System and method for the fluidic assembly of emissive displays
US9825202B2 (en) 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
JP2016090810A (ja) * 2014-11-05 2016-05-23 明立技研株式会社 表示装置
US9502615B2 (en) * 2014-11-13 2016-11-22 Epistar Corporation Light-emitting diode device
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
KR101723436B1 (ko) * 2015-01-13 2017-04-05 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치의 제조방법
USD780763S1 (en) * 2015-03-20 2017-03-07 Nagrastar Llc Smart card interface
KR101614370B1 (ko) 2015-04-07 2016-04-21 엘지전자 주식회사 반도체 발광소자, 반도체 발광소자의 이송 헤드, 및 반도체 발광소자를 이송하는 방법
USD864968S1 (en) 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface
US10193012B2 (en) * 2015-05-21 2019-01-29 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
DE102015214219A1 (de) 2015-07-28 2017-02-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bauelements und ein Bauelement
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
KR102402999B1 (ko) 2015-08-31 2022-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
KR102393374B1 (ko) 2015-08-31 2022-05-03 삼성디스플레이 주식회사 표시 장치 및 상기 표시 장치의 제조 방법
KR102467420B1 (ko) 2015-08-31 2022-11-16 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
US10170665B2 (en) * 2015-09-09 2019-01-01 Goertek.Inc Repairing method, manufacturing method, device and electronics apparatus of micro-LED
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
FR3044467B1 (fr) * 2015-11-26 2018-08-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
US9930277B2 (en) 2015-12-23 2018-03-27 X-Celeprint Limited Serial row-select matrix-addressed system
US10091446B2 (en) 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US9928771B2 (en) 2015-12-24 2018-03-27 X-Celeprint Limited Distributed pulse width modulation control
KR102298484B1 (ko) 2016-01-15 2021-09-03 로히니, 엘엘씨. 장치 상의 커버를 통해 후면 발광하는 장치 및 방법
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
KR102651054B1 (ko) 2016-02-22 2024-03-26 삼성디스플레이 주식회사 전사 장치, 이를 이용한 전사 방법 및 표시 장치
US10217730B2 (en) 2016-02-25 2019-02-26 X-Celeprint Limited Efficiently micro-transfer printing micro-scale devices onto large-format substrates
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
KR102455039B1 (ko) * 2016-03-18 2022-10-17 삼성디스플레이 주식회사 신축성 디스플레이 장치
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
KR102631260B1 (ko) 2016-04-08 2024-01-31 삼성디스플레이 주식회사 표시장치 및 표시장치 제조방법
EP3443594A4 (en) * 2016-04-15 2019-12-18 Glo Ab METHOD FOR GENERATING AN ARRANGEMENT FROM A UNIT WITH MULTIPLE CELLS
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US10360846B2 (en) 2016-05-10 2019-07-23 X-Celeprint Limited Distributed pulse-width modulation system with multi-bit digital storage and output device
DE102016108776A1 (de) 2016-05-12 2017-11-16 Osram Opto Semiconductors Gmbh Optische Anordnung und Anzeigegerät
WO2017205132A1 (en) * 2016-05-24 2017-11-30 Danesh Fariba Selective die repair on a light emitting device assembly
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US10453826B2 (en) 2016-06-03 2019-10-22 X-Celeprint Limited Voltage-balanced serial iLED pixel and display
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
KR102617466B1 (ko) * 2016-07-18 2023-12-26 주식회사 루멘스 마이크로 led 어레이 디스플레이 장치
US10475876B2 (en) 2016-07-26 2019-11-12 X-Celeprint Limited Devices with a single metal layer
DE112017004029T5 (de) * 2016-08-11 2019-05-02 Lumens Co., Ltd. Led-modul und verfahren zur seiner herstellung
CN109643666A (zh) * 2016-08-24 2019-04-16 东丽工程株式会社 安装方法和安装装置
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10217729B2 (en) * 2016-09-30 2019-02-26 Intel Corporation Apparatus for micro pick and bond
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
TWI739949B (zh) 2016-11-15 2021-09-21 愛爾蘭商艾克斯展示公司技術有限公司 微轉印可印刷覆晶結構及方法
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
JP6850112B2 (ja) * 2016-11-28 2021-03-31 株式会社ディスコ Ｌｅｄ組み立て方法
DE102016124646A1 (de) 2016-12-16 2018-06-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
CN106783648B (zh) * 2016-12-28 2019-01-25 歌尔股份有限公司 一种led显示屏的制备方法
JP6289718B1 (ja) 2017-01-02 2018-03-07 ルーメンス カンパニー リミテッド Ｌｅｄディスプレイ装置
US10832609B2 (en) 2017-01-10 2020-11-10 X Display Company Technology Limited Digital-drive pulse-width-modulated output system
US10332868B2 (en) 2017-01-26 2019-06-25 X-Celeprint Limited Stacked pixel structures
US10468391B2 (en) 2017-02-08 2019-11-05 X-Celeprint Limited Inorganic light-emitting-diode displays with multi-ILED pixels
US20180240931A1 (en) * 2017-02-23 2018-08-23 Novatek Microelectronics Corp. Micro-device panel and manufacturing process thereof
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
CN106941108B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
KR101902566B1 (ko) * 2017-07-25 2018-09-28 엘지디스플레이 주식회사 발광 표시 장치 및 이의 제조 방법
KR102609560B1 (ko) 2017-09-08 2023-12-04 삼성전자주식회사 반도체 제조 장치
TWI650854B (zh) * 2017-10-31 2019-02-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示面板及其製造方法
TWI637481B (zh) 2017-11-29 2018-10-01 財團法人工業技術研究院 半導體結構、發光裝置及其製造方法
CN108010933A (zh) * 2017-12-01 2018-05-08 广东省半导体产业技术研究院 一种微led发光显示阵列像素单元构造及其制作方法
CN108231968B (zh) * 2017-12-11 2020-02-11 厦门市三安光电科技有限公司 微发光二极管及其转移方法
CN108258006B (zh) * 2017-12-21 2021-04-06 厦门市三安光电科技有限公司 微发光元件
CN109994413A (zh) * 2017-12-29 2019-07-09 南昌欧菲显示科技有限公司 微型元件巨量转移方法
KR102502970B1 (ko) * 2018-01-29 2023-02-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치의 제조방법 및 디스플레이 장치
JP6916525B2 (ja) * 2018-02-06 2021-08-11 株式会社ブイ・テクノロジー Ｌｅｄディスプレイの製造方法
US11189605B2 (en) 2018-02-28 2021-11-30 X Display Company Technology Limited Displays with transparent bezels
US10690920B2 (en) 2018-02-28 2020-06-23 X Display Company Technology Limited Displays with transparent bezels
TWI679762B (zh) * 2018-03-06 2019-12-11 友達光電股份有限公司 顯示裝置及其製造方法
KR20190112916A (ko) * 2018-03-27 2019-10-08 (주)라이타이저 디스플레이 장치 및 그의 제조 방법
KR20190114334A (ko) * 2018-03-29 2019-10-10 (주)포인트엔지니어링 마이크로 led 검사 및 리페어 방법
KR102481434B1 (ko) * 2018-03-30 2022-12-26 (주)포인트엔지니어링 전사헤드 및 이를 이용한 마이크로 led 흡착방법
US10832933B1 (en) * 2018-04-02 2020-11-10 Facebook Technologies, Llc Dry-etching of carrier substrate for microLED microassembly
KR102078643B1 (ko) * 2018-04-04 2020-04-07 (주)라이타이저 원칩 타입의 발광 다이오드를 이용한 디스플레이 장치 및 그 제조 방법
US10910355B2 (en) 2018-04-30 2021-02-02 X Display Company Technology Limited Bezel-free displays
US10714001B2 (en) 2018-07-11 2020-07-14 X Display Company Technology Limited Micro-light-emitting-diode displays
TWI660524B (zh) * 2018-07-17 2019-05-21 友達光電股份有限公司 發光裝置及其製造方法
KR102136579B1 (ko) 2018-07-27 2020-07-22 서울대학교산학협력단 표시 장치
FR3087942B1 (fr) * 2018-10-29 2021-09-17 Commissariat Energie Atomique Dispositif d'affichage electroluminescent multi-couleurs et procede de fabrication d'un tel dispositif
KR102190706B1 (ko) * 2018-11-29 2020-12-14 주식회사 에이엔케이 복수의 마이크로 led 칩 전이 방법
WO2020116978A1 (ko) * 2018-12-06 2020-06-11 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN111724676B (zh) * 2019-03-21 2022-09-02 昆山工研院新型平板显示技术中心有限公司 可拉伸导线及其制作方法和显示装置
JP7420136B2 (ja) * 2019-03-22 2024-01-23 Ａｇｃ株式会社 透明表示装置、透明表示装置付きガラス板、透明表示装置付き合わせガラス、及び移動体
KR20200114272A (ko) * 2019-03-28 2020-10-07 (주)큐엠씨 마이크로 발광다이오드 칩 제거 장치와 방법 및 이를 이용한 마이크로 발광다이오드 모듈 리페어 시스템과 방법
US10903267B2 (en) * 2019-04-04 2021-01-26 Bor-Jen Wu System and method for making micro LED display
JP7333192B2 (ja) * 2019-04-23 2023-08-24 株式会社ディスコ 移設方法
US11246251B2 (en) 2019-05-02 2022-02-08 Seagate Technology Llc Micro-component transfer systems, methods, and devices
US10923378B2 (en) 2019-05-13 2021-02-16 Seagate Technology Llc Micro-component batch transfer systems, methods, and devices
JP7253994B2 (ja) * 2019-07-23 2023-04-07 株式会社ディスコ 光デバイスの移設方法
JP7292138B2 (ja) * 2019-07-23 2023-06-16 株式会社ジャパンディスプレイ 表示装置のリペアシステム
US11152540B2 (en) 2019-07-29 2021-10-19 Lextar Electronics Corporation Light emitting diode structure and method of manufacturing thereof
US11101417B2 (en) 2019-08-06 2021-08-24 X Display Company Technology Limited Structures and methods for electrically connecting printed components
KR102347148B1 (ko) * 2019-08-12 2022-01-06 엘씨스퀘어(주) 레이저를 이용한 개별 소자들의 전사 방법
JP7200884B2 (ja) * 2019-08-27 2023-01-10 信越化学工業株式会社 微小構造体の実装方法
KR102275366B1 (ko) * 2019-09-26 2021-07-12 주식회사 소프트에피 반도체 발광부를 이송하는 방법
CN112582343B (zh) * 2019-09-29 2022-12-06 成都辰显光电有限公司 一种生长基板及微元件的转移方法
JP2021056383A (ja) * 2019-09-30 2021-04-08 日東電工株式会社 隙間閉塞方法、隙間閉塞構造体、及び隙間閉塞構造体の製造方法
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
CN112768394B (zh) * 2019-10-21 2022-10-04 成都辰显光电有限公司 发光元件及微发光二极管的转移方法
CN112713167B (zh) * 2019-10-25 2023-05-19 成都辰显光电有限公司 一种显示面板及显示面板的制备方法
CN112736175B (zh) * 2019-10-28 2022-09-06 成都辰显光电有限公司 微led芯片、生长基板、显示面板以及微led芯片的转移方法
CN113035736A (zh) * 2019-12-09 2021-06-25 群创光电股份有限公司 电子装置的制作方法
JP2021118274A (ja) * 2020-01-27 2021-08-10 株式会社ジャパンディスプレイ 移戴基板
JP2021170596A (ja) * 2020-04-15 2021-10-28 国立大学法人東海国立大学機構 窒化ガリウム半導体装置の製造方法
JP7477835B2 (ja) * 2020-04-15 2024-05-02 株式会社デンソー 半導体チップの製造方法
US11705537B2 (en) 2020-04-23 2023-07-18 Samsung Electronics Co.,. Ltd. Display device and method of manufacturing light emitting device
KR102506449B1 (ko) * 2020-04-23 2023-03-07 삼성전자주식회사 표시 장치
TWI725834B (zh) * 2020-04-29 2021-04-21 台灣勁合有限公司 發光組件的半成品
US11495172B2 (en) 2020-10-19 2022-11-08 X Display Company Technology Limited Pixel group and column token display architectures
US11488518B2 (en) * 2020-10-19 2022-11-01 X Display Company Technology Limited Pixel group and column token display architectures
KR102514025B1 (ko) * 2020-11-06 2023-03-24 고려대학교 산학협력단 마이크로 발광소자 구조 및 마이크로 발광소자 전사 방법
US11329208B1 (en) * 2020-12-01 2022-05-10 J C Chen Pixel assembly process
KR20230131932A (ko) 2021-01-19 2023-09-14 나가세케무텍쿠스가부시키가이샤 반도체 전사용 플럭스 시트
JP2022135625A (ja) * 2021-03-05 2022-09-15 株式会社デンソー 半導体チップ、加工ウェハ、および半導体チップの製造方法
US11430375B1 (en) 2021-03-19 2022-08-30 X Display Company Technology Limited Pulse-density-modulation pixel control circuits and devices including them
KR20230110637A (ko) * 2021-03-26 2023-07-24 데쿠세리아루즈 가부시키가이샤 표시 장치의 제조 방법
TWI773279B (zh) * 2021-04-27 2022-08-01 友達光電股份有限公司 顯示面板
DE102021120689A1 (de) 2021-08-09 2023-02-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Transferverfahren für optoelektronsiche halbleiterbauelemete
WO2023152166A1 (en) * 2022-02-11 2023-08-17 Coherent Lasersystems Gmbh & Co. Kg Microelectronic device transfer and cleaning with uv laser
WO2024009956A1 (ja) * 2022-07-06 2024-01-11 信越化学工業株式会社 Ｌｅｄ実装基板の製造方法、洗浄液及び洗浄方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617385A (en) * 1979-07-20 1981-02-19 Tokyo Shibaura Electric Co Production of display device
GB8402654D0 (en) 1984-02-01 1984-03-07 Secr Defence Flatpanel display
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
GB2249428A (en) * 1988-08-11 1992-05-06 Plessey Co Plc Connections for led arrays
IT1225690B (it) 1988-09-15 1990-11-22 Ansaldo Spa Reattore nucleare a sicurezza intrinseca del tipo ad acqua in pressione
JP2895566B2 (ja) 1990-04-27 1999-05-24 豊田合成株式会社 発光ダイオード
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5258320A (en) 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
JPH04247486A (ja) 1991-02-01 1992-09-03 Dainippon Printing Co Ltd 反射型レリーフホログラムの転写箔及びそれを用いた反射型レリーフホログラムの選択的転写方法
JPH06118441A (ja) * 1991-11-05 1994-04-28 Tadanobu Kato 表示セル
JPH05290669A (ja) 1992-01-22 1993-11-05 Fujikura Ltd 照光スイッチ
JPH05315643A (ja) * 1992-05-08 1993-11-26 Nkk Corp 発光ダイオードアレー及びその製造方法
US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
US5226723A (en) * 1992-05-11 1993-07-13 Chen Der Jong Light emitting diode display
JPH05313210A (ja) * 1992-05-14 1993-11-26 Ricoh Co Ltd 薄膜積層デバイス
JPH0697237A (ja) * 1992-09-10 1994-04-08 Hitachi Ltd 半導体装置及びその製造方法
JP2950106B2 (ja) * 1993-07-14 1999-09-20 松下電器産業株式会社 光素子実装体の製造方法
JPH0741616A (ja) * 1993-07-30 1995-02-10 Showa Denko Kk ポリプロピレン系樹脂組成物
ES2159567T3 (es) 1993-08-13 2001-10-16 Pgi Graphics Imaging Llc Transferencia por ablacion sobre receptores intermedios.
JP3268910B2 (ja) * 1993-10-14 2002-03-25 三洋電機株式会社 発光ダイオード表示器
JPH07122786A (ja) * 1993-10-27 1995-05-12 Victor Co Of Japan Ltd Ｌｅｄアレイ装置
US5977950A (en) * 1993-11-29 1999-11-02 Motorola, Inc. Manually controllable cursor in a virtual image
US5391257A (en) * 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
JP3267045B2 (ja) * 1994-03-24 2002-03-18 日亜化学工業株式会社 Ｌｅｄ素子
JP3141236B2 (ja) 1994-10-03 2001-03-05 ソニー株式会社 部品供給方法及びその装置
JP3535602B2 (ja) 1995-03-23 2004-06-07 松下電器産業株式会社 面実装型ｌｅｄ
DE29511817U1 (de) 1995-07-21 1996-11-14 Bosch Gmbh Robert Vorrichtung zum Verstellen eines Kraftfahrzeugspiegels
JPH0945964A (ja) * 1995-07-26 1997-02-14 Stanley Electric Co Ltd チップマウント用ｌｅｄ素子及びその製造方法
JPH0945984A (ja) 1995-07-27 1997-02-14 Ricoh Co Ltd ２周波レーザ光発振装置
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren
JPH09129933A (ja) * 1995-10-31 1997-05-16 Sanyo Electric Co Ltd 発光素子
US5621225A (en) * 1996-01-18 1997-04-15 Motorola Light emitting diode display package
US5940683A (en) * 1996-01-18 1999-08-17 Motorola, Inc. LED display packaging with substrate removal and method of fabrication
DE19603444C2 (de) * 1996-01-31 2003-04-24 Siemens Ag LED-Vorrichtung mit mindestens zwei LEDs
US5739800A (en) * 1996-03-04 1998-04-14 Motorola Integrated electro-optical package with LED display chip and substrate with drivers and central opening
JPH09293904A (ja) 1996-04-26 1997-11-11 Nichia Chem Ind Ltd Ｌｅｄパッケージ
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
JPH1070151A (ja) 1996-08-26 1998-03-10 Ricoh Co Ltd 導電粒子の配列方法及びその装置
JP3342322B2 (ja) * 1996-11-27 2002-11-05 シャープ株式会社 Ｌｅｄ素子表示装置の製造方法
JPH10173305A (ja) 1996-12-06 1998-06-26 Fujikura Ltd 自動車用部品実装プリント配線板
US6087680A (en) * 1997-01-31 2000-07-11 Siemens Aktiengesellschaft Led device
JP3572924B2 (ja) * 1997-03-06 2004-10-06 松下電器産業株式会社 発光装置及びそれを用いた記録装置
JP3894613B2 (ja) 1997-03-14 2007-03-22 株式会社フジクラ フレキシブルプリント配線板
JPH111027A (ja) * 1997-04-14 1999-01-06 Oki Electric Ind Co Ltd Ｌｅｄアレイおよびプリントヘッドならびに電子写真プリンタ
TW427039B (en) * 1997-06-16 2001-03-21 Matsushita Electric Ind Co Ltd Manufacturing method for semiconductor, manufacturing method for semiconductor device, manufacturing method for semiconductor substrate
JPH118338A (ja) * 1997-06-17 1999-01-12 Nichia Chem Ind Ltd 表面実装型ｌｅｄの取り外し方法、取り外し装置及び発光装置のリペア方法
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
US6229508B1 (en) 1997-09-29 2001-05-08 Sarnoff Corporation Active matrix light emitting diode pixel structure and concomitant method
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JPH11126037A (ja) * 1997-10-23 1999-05-11 Futaba Corp 半導体表示装置及びその製造方法
EP1496094B1 (en) * 1997-10-29 2008-08-13 Hitachi Chemical Company, Ltd. An adhesive sheet based on a siloxane-modified polyamideimide resin composition, and a CSP board and a semiconductor device produced by using the sheet
JP3406207B2 (ja) * 1997-11-12 2003-05-12 シャープ株式会社 表示用トランジスタアレイパネルの形成方法
JPH11163419A (ja) * 1997-11-26 1999-06-18 Rohm Co Ltd 発光装置
JP4083866B2 (ja) * 1998-04-28 2008-04-30 シャープ株式会社 半導体レーザ素子
JPH11330544A (ja) * 1998-05-11 1999-11-30 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
DE19840210A1 (de) * 1998-09-03 2000-03-09 Fraunhofer Ges Forschung Verfahren zur Handhabung einer Mehrzahl von Schaltungschips
JP2959566B1 (ja) * 1998-09-08 1999-10-06 日本電気株式会社 フラットパネルディスプレイ
US6113685A (en) * 1998-09-14 2000-09-05 Hewlett-Packard Company Method for relieving stress in GaN devices
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
MY124036A (en) * 1999-07-08 2006-06-30 Nichia Corp Image display apparatus and its method of operation
US6283693B1 (en) * 1999-11-12 2001-09-04 General Semiconductor, Inc. Method and apparatus for semiconductor chip handling
JP3456462B2 (ja) * 2000-02-28 2003-10-14 日本電気株式会社 半導体装置及びその製造方法
US6277711B1 (en) * 2001-01-08 2001-08-21 Jiahn-Chang Wu Semiconductor matrix formation

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