US7483119B2 - Exposure method, substrate stage, exposure apparatus, and device manufacturing method - Google Patents

Exposure method, substrate stage, exposure apparatus, and device manufacturing method Download PDF

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Publication number
US7483119B2
US7483119B2 US11/297,324 US29732405A US7483119B2 US 7483119 B2 US7483119 B2 US 7483119B2 US 29732405 A US29732405 A US 29732405A US 7483119 B2 US7483119 B2 US 7483119B2
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United States
Prior art keywords
substrate
liquid
stage apparatus
repellent
peripheral wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US11/297,324
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English (en)
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US20060139614A1 (en
Inventor
Soichi Owa
Nobutaka Magome
Shigeru Hirukawa
Yoshihiko Kudo
Jiro Inoue
Hiroyuki Nagasaka
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Nikon Corp
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Nikon Corp
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Publication date
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Assigned to NIKON CORPORATION reassignment NIKON CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KUDO, YOSHIHIKO, IMAI, MOTOKATSU, OWA, SOICHI, INOUE, JIRO, MAGOME, NOBUTAKA, NISHII, YASUFUMI, KOHNO, HIROTAKA, TAKAIWA, HIROAKI, HIRUKAWA, SHIGERU, NAGASAKA, HIROYUKI, NEI, MASAHIRO, SHIRAISHI, KENICHI
Priority to US11/448,927 priority Critical patent/US20060227312A1/en
Publication of US20060139614A1 publication Critical patent/US20060139614A1/en
Priority to US12/007,450 priority patent/US8040491B2/en
Priority to US12/232,064 priority patent/US8384880B2/en
Priority to US12/232,063 priority patent/US8208117B2/en
Application granted granted Critical
Publication of US7483119B2 publication Critical patent/US7483119B2/en
Priority to US13/753,969 priority patent/US9019467B2/en
Priority to US13/754,112 priority patent/US9268237B2/en
Priority to US14/696,898 priority patent/US9846371B2/en
Priority to US15/664,319 priority patent/US20170329234A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/58Baseboards, masking frames, or other holders for the sensitive material
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
US11/297,324 2003-06-13 2005-12-09 Exposure method, substrate stage, exposure apparatus, and device manufacturing method Expired - Fee Related US7483119B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US11/448,927 US20060227312A1 (en) 2003-06-13 2006-06-08 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/007,450 US8040491B2 (en) 2003-06-13 2008-01-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,064 US8384880B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,063 US8208117B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US13/753,969 US9019467B2 (en) 2003-06-13 2013-01-30 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US13/754,112 US9268237B2 (en) 2003-06-13 2013-01-30 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US14/696,898 US9846371B2 (en) 2003-06-13 2015-04-27 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US15/664,319 US20170329234A1 (en) 2003-06-13 2017-07-31 Exposure method, substrate stage, exposure apparatus, and device manufacturing method

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPP2003-169904 2003-06-13
JP2003169904 2003-06-13
JP2003383887 2003-11-13
JPP2003-383887 2003-11-13
JPP2004-039654 2004-02-17
JP2004039654 2004-02-17
PCT/JP2004/008578 WO2004112108A1 (ja) 2003-06-13 2004-06-11 露光方法、基板ステージ、露光装置、及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2004/008578 Continuation WO2004112108A1 (ja) 2003-06-13 2004-06-11 露光方法、基板ステージ、露光装置、及びデバイス製造方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US11/448,927 Division US20060227312A1 (en) 2003-06-13 2006-06-08 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,064 Division US8384880B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,063 Division US8208117B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method

Publications (2)

Publication Number Publication Date
US20060139614A1 US20060139614A1 (en) 2006-06-29
US7483119B2 true US7483119B2 (en) 2009-01-27

Family

ID=33556144

Family Applications (9)

Application Number Title Priority Date Filing Date
US11/297,324 Expired - Fee Related US7483119B2 (en) 2003-06-13 2005-12-09 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US11/448,927 Abandoned US20060227312A1 (en) 2003-06-13 2006-06-08 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/007,450 Expired - Fee Related US8040491B2 (en) 2003-06-13 2008-01-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,064 Expired - Fee Related US8384880B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,063 Expired - Fee Related US8208117B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US13/753,969 Active US9019467B2 (en) 2003-06-13 2013-01-30 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US13/754,112 Expired - Fee Related US9268237B2 (en) 2003-06-13 2013-01-30 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US14/696,898 Expired - Fee Related US9846371B2 (en) 2003-06-13 2015-04-27 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US15/664,319 Abandoned US20170329234A1 (en) 2003-06-13 2017-07-31 Exposure method, substrate stage, exposure apparatus, and device manufacturing method

Family Applications After (8)

Application Number Title Priority Date Filing Date
US11/448,927 Abandoned US20060227312A1 (en) 2003-06-13 2006-06-08 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/007,450 Expired - Fee Related US8040491B2 (en) 2003-06-13 2008-01-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,064 Expired - Fee Related US8384880B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US12/232,063 Expired - Fee Related US8208117B2 (en) 2003-06-13 2008-09-10 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US13/753,969 Active US9019467B2 (en) 2003-06-13 2013-01-30 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US13/754,112 Expired - Fee Related US9268237B2 (en) 2003-06-13 2013-01-30 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US14/696,898 Expired - Fee Related US9846371B2 (en) 2003-06-13 2015-04-27 Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US15/664,319 Abandoned US20170329234A1 (en) 2003-06-13 2017-07-31 Exposure method, substrate stage, exposure apparatus, and device manufacturing method

Country Status (7)

Country Link
US (9) US7483119B2 (de)
EP (5) EP1641028B1 (de)
JP (11) JP4415939B2 (de)
KR (9) KR101528089B1 (de)
HK (3) HK1196900A1 (de)
TW (7) TWI607292B (de)
WO (1) WO2004112108A1 (de)

Cited By (15)

* Cited by examiner, † Cited by third party
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US20070115450A1 (en) * 2003-12-03 2007-05-24 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US20070114451A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070220775A1 (en) * 2006-03-22 2007-09-27 Katsuhiko Miya Substrate processing method and substrate processing apparatus
US20080106710A1 (en) * 2006-11-03 2008-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion Lithography System Using A Sealed Wafer Bath
US20080106715A1 (en) * 2006-11-03 2008-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion Lithography System Using A Sealed Wafer Bath
US20080259295A1 (en) * 2005-05-03 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080284994A1 (en) * 2006-01-27 2008-11-20 International Business Machines Corporation Reducing contamination in immersion lithography
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US20090015816A1 (en) * 2003-06-13 2009-01-15 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US20090303455A1 (en) * 2004-08-19 2009-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20120056105A1 (en) * 2010-09-07 2012-03-08 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
US8704998B2 (en) 2004-04-14 2014-04-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a barrier to collect liquid
US8715893B2 (en) 2010-03-18 2014-05-06 Micron Technology, Inc. Masks for use in lithography including image reversal assist features, lithography systems including such masks, and methods of forming such masks
US9329496B2 (en) 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
CN108511383A (zh) * 2017-02-28 2018-09-07 株式会社斯库林集团 基板处理装置及基板保持装置

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US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4488005B2 (ja) * 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
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US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
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JP4605014B2 (ja) * 2003-10-28 2011-01-05 株式会社ニコン 露光装置、露光方法、デバイスの製造方法
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JP4572539B2 (ja) * 2004-01-19 2010-11-04 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
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