US20030030916A1 - Projection optical system and exposure apparatus having the projection optical system - Google Patents

Projection optical system and exposure apparatus having the projection optical system Download PDF

Info

Publication number
US20030030916A1
US20030030916A1 US10006667 US666701A US2003030916A1 US 20030030916 A1 US20030030916 A1 US 20030030916A1 US 10006667 US10006667 US 10006667 US 666701 A US666701 A US 666701A US 2003030916 A1 US2003030916 A1 US 2003030916A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
object
lens group
lens
optical system
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US10006667
Other versions
US6633365B2 (en )
Inventor
Yutaka Suenaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70241Optical aspects of refractive systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/14Optical objectives specially designed for the purposes specified below for use with infra-red or ultra-violet radiation
    • G02B13/143Optical objectives specially designed for the purposes specified below for use with infra-red or ultra-violet radiation for use with ultra-violet radiation
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B27/00Other optical systems; Other optical apparatus
    • G02B27/18Other optical systems; Other optical apparatus for optical projection, e.g. combination of mirror and condenser and objective
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion

Abstract

A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

Description

    INCORPORATION BY REFERENCE
  • The disclosure of the following priority application is herein incorporated by reference: [0001]
  • Japanese Patent Application No. 2000-375992 filed Dec. 11, 2000. [0002]
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0003]
  • The present invention relates to a projection optical system and to an exposure apparatus to which such a projection optical system is fitted, and more particularly relates to a projection optical system which is suitable for an exposure apparatus which is used for the manufacture of semiconductor elements or liquid crystal display elements and the like by a process of photolithography. [0004]
  • 2. Description of the Related Art [0005]
  • In a photolithography process for manufacture of semiconductor elements or the like, there is employed an exposure apparatus for projecting and exposing an image of a pattern upon a mask via a projection optical system onto a photosensitive substrate such as a wafer with this type of exposure apparatus, the resolving power which is required from the projection optical system is increasing along with increase of the degree of integration of the semiconductor elements or the like. Due to this, along with shortening the wavelength of the illumination light (the exposure light), a compelling necessity is experienced for raising the image side numerical aperture (NA) of the projection optical system to the ultimate limit, in order to satisfy this requirement for resolving power of the projection optical system. [0006]
  • However, when the numerical aperture of the projection optical system is increased, the lens outer diameter is increased in proportion to the size of the numerical aperture. As a result, the outer diameter (the glass material diameter) of the block of optical material from which this lens is manufactured also becomes great, and it becomes difficult to obtain an optical material block of the required homogeneity, and therefore it is hard to manufacture an optical system of good performance. Furthermore, when the lens outer diameter becomes great, the lens can easily be influenced by bending or distortion due to its weight, which also makes it difficult to manufacture an optical system of good performance. [0007]
  • SUMMARY OF THE INVENTION
  • The objective of the present invention is to provide a high resolution projection optical system, and an exposure apparatus to which such a projection optical system is fitted, which are capable of ensuring a large image side numerical aperture, while restraining increase in the size of the lens outer diameter. Furthermore, it is another objective of the present invention to provide a method of microdevice manufacture, which can manufacture a good quality microdevice at high accuracy by utilizing an exposure apparatus according to the present invention as defined above, to which is fitted a high resolution projection optical system which has a large image side numerical aperture. [0008]
  • A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G[0009] 1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group G3 of positive refractive power; and a fourth lens group G4 of positive refractive power, and: the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.
  • In this projection optical system, it is preferred that the projection optical system has an image side numerical aperture greater than or equal to 0.8. [0010]
  • Also, it is preferred that with T being a sum of thicknesses along the optical axis of all optical members included in the fourth lens group G[0011] 4, and with D being the distance along the optical axis between the optical surface of the fourth lens group G4 closest to the second object, and the second object, a condition of 0.001<D/T<0.2 is satisfied.
  • Also, it is preferred that with T being a sum of the thicknesses along the optical axis of all optical members included in the fourth lens group G[0012] 4, and with L being a distance along the optical axis between the first object and the second object, a condition of 0.02<T/L is satisfied.
  • Also, it is preferred that a distance L in mm along the optical axis between the first object and the second object satisfies a condition of 800<L<1600. [0013]
  • Also, it is preferred that a focal length F[0014] 2 of the second lens group G2 and a distance L in mm along the optical axis between the first object and the second object satisfy a condition of 0.01<|F2|/L<0.15.
  • Also, it is preferred that at least one of a plurality of optical surfaces comprised in the projection optical system is formed in an aspherical shape. [0015]
  • An exposure apparatus according to the present invention, comprises: an illumination system for illuminating a mask as a first object; a projection optical system described above that forms an image of a pattern which is formed upon the mask upon a photosensitive substrate as the second object; and a prevention device that prevents gas which is generated from the photosensitive substrate from adhering to the optical surface closest to the second object of the fourth lens group G[0016] 4 of the projection optical system.
  • In this exposure apparatus, it is preferred that the prevention device comprises a flow forming device that forms a predetermined flow of gas or liquid in a optical path between the optical surface closest to the second object of the fourth lens group G[0017] 4 and the photosensitive substrate.
  • An exposure method according to the present invention, comprises: an illumination process of illuminating a mask as a first object; and an exposure process of exposing, via a projection optical system described above, an image of a pattern which is formed upon the mask upon a photosensitive substrate as the second object, and the exposure process comprises a flow formation process of forming a predetermined flow of gas or liquid in a optical path between the optical surface closest to the second object of the fourth lens group G[0018] 4 and the photosensitive substrate, in order to prevent gas which is generated from the photosensitive substrate from adhering to the optical surface closest to the second object of the fourth lens group G4.
  • A method according to the present invention for manufacturing a microdevice, comprises: an exposure process of exposing a pattern on a mask upon a photosensitive substrate, using an exposure method described above; and a development process of developing the photosensitive substrate which has been exposed by the exposure process.[0019]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a figure schematically showing the structure of an exposure apparatus equipped with a projection optical system which is a preferred embodiment of the present invention. [0020]
  • FIG. 2 is a figure showing the structure of lenses of a projection optical system according to a first preferred embodiment of the present invention. [0021]
  • FIG. 3 is a figure showing the coma aberration of this projection optical system according to the first preferred embodiment of the present invention. [0022]
  • FIG. 4 is a figure showing the structure of lenses of a projection optical system according to a second preferred embodiment of the present invention. [0023]
  • FIG. 5 is a figure showing the coma aberration of this projection optical system according to the second preferred embodiment of the present invention. [0024]
  • FIG. 6 is a figure showing the structure of lenses of a projection optical system according to a third preferred embodiment of the present invention. [0025]
  • FIG. 7 is a figure showing the coma aberration of this projection optical system according to the third preferred embodiment of the present invention. [0026]
  • FIG. 8 is a flow chart showing a procedure when manufacturing a semiconductor device which is a microdevice. [0027]
  • FIG. 9 is a flow chart showing a procedure when manufacturing a liquid crystal display element which is a microdevice.[0028]
  • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Generally, with a projection optical system which is fitted to an exposure apparatus, when the image side numerical aperture is increased with the distance between the lens surface which is closest to the image side (the wafer side) and the wafer, in other words the working distance, being kept constant, the lens outer diameter also becomes greater in proportion to the increase of the image side numerical aperture. One reason for this is that generation of negative high order spherical aberration is promoted. This point will now be explained. [0029]
  • It often happens that the lens surface of a projection optical system which is closest to the image side is formed in a shape which has small curvature and is close to a plane. In this case, when light is emitted from the projection optical system towards the wafer with a large numerical aperture, it experiences a large refraction effect at this lens surface which is closest to the image side which is formed in a shape close to a plane, and accordingly is subjected to high order spherical aberration. Here, the amount of high order spherical aberration which is generated is nearly proportional to the above described working distance D. Accordingly, if the working distance D is set to be small, it is possible to suppress the generation of high order spherical aberration to a low level, and it is possible to restrain the lens outer diameter to be comparatively small, even if the image side numerical aperture is made large. [0030]
  • Thus, in the present invention, the working distance D is set within a relatively small predetermined range according to the following condition (1), with a basic construction which comprises, in order from the object side (the mask side) : a first lens group G[0031] 1 of positive refractive power; a second lens group G2 of negative refractive power; a third lens group of positive refractive power; and a fourth lens group G4 also of positive refractive power. As a result, with the present invention, it is possible to ensure a large image side numerical aperture along with restraining increase in the size of the lens outer diameter. In the following, the structure of the present invention will be described in more detail with reference to various conditions appertaining thereto.
  • With the present invention, the working distance D (units mm) along the optical axis between the optical surface of the fourth lens group G[0032] 4 which is closest to the second object (which is closest to the image side: which in the case of an exposure apparatus is the extreme optical surface in the direction of the wafer) and the second object (which in the case of an exposure apparatus is the wafer) should satisfy the following condition (1):
  • 0.1<D<5   (1)
  • When the working distance D exceeds the upper limit value of the above condition (1), the working distance D becomes too large, and the incidence of high order spherical aberration becomes great, so that a requirement arises to correct this high order spherical aberration in advance with a lens which is positioned more to the object side than the lens which is closest to the image side. As a result the structure of the optical system becomes complicated and the lens outer diameter becomes large, and it becomes difficult to implement an optical system of a realistic size. [0033]
  • On the other hand, when the working distance D drops below the lower limit value of the above condition (1), the working distance D becomes too small, and the operability and so on of the optical system is remarkable deteriorated. In particular, in the case of an exposure apparatus, it becomes difficult to prevent gas generated due to irradiation from the resist which is coated upon the wafer (in the following this phenomenon is termed “out-gassing”) from adhering to the surface of the lens which is closest to the image side. Furthermore, along with it becoming difficult to perform autofocusing upon the wafer surface, the danger of contacting the wafer against the projection optical system when changing the wafer becomes very high. [0034]
  • Further, with the present invention, it is desirable for the following condition (2) to be satisfied: [0035]
  • 0.001<D/T<0.2   (2)
  • Here T is the sum of the thicknesses along the optical axis of all the optical members which make up the fourth lens group G[0036] 4, in other words, the total lens thickness of the fourth lens group G4. Furthermore, as described above, D is the working distance.
  • When the upper limit value of the above condition (2) is exceeded, just as in the above case when the upper limit value of the condition (1) is exceeded, the working distance D becomes too large, and the incidence of high order spherical aberration becomes great, so that the structure of the optical system becomes complicated and the lens outer diameter becomes undesirable large. On the other hand, when the lower limit value of the above condition (2) is dropped below, just as in the above case when the lower limit value of the above condition (1) is dropped below, the working distance D becomes too small, and, along with it becoming difficult to prevent adherence of outgassed material (maybe called as just outgas) and to perform autofocusing upon the wafer surface, an undesirable high danger arises of contacting the wafer against the projection optical system when changing the wafer. [0037]
  • Further, with the present invention, it is desirable for the following condition (3) to be satisfied: [0038]
  • 0.02<T/L   (3)
  • Here L is the distance along the optical axis from the first object (in the case of an exposure apparatus, the mask) to the second object, in other words the distance between the objective and the image. Furthermore, as described above, T is the total lens thickness of the fourth lens group G[0039] 4.
  • This condition (3) is a condition for proper correction for spherical aberration and coma aberration. In more detail, if the total lens thickness T of the fourth lens group G[0040] 4 is sufficiently great, the generation of spherical aberration and coma aberration becomes small, and the corresponding correction is easy. However, if the lower limit value of condition (3) is dropped below, the total lens thickness T of the fourth lens group G4 has become too small, and, with the constant positive refractive power being kept the same, problems arise in properly correcting the spherical aberration and the coma aberration, and an undesirable deterioration takes place in the focusing performance.
  • Further, with the present invention, it is desirable for the distance L (units mm) between the objective and the image point of the projection optical system to satisfy the following condition (4): [0041]
  • 800<L<1600   (4)
  • Condition (4) is a condition for proper correction of total aberration while maintaining a wide projection field of view (in the case of an exposure apparatus, a wide exposure area). If the upper limit of condition (4) is exceeded, then the distance L between the object and the image points becomes too great, and this is undesirable because the size of the optical system is increased. In particular, in the case of application to an exposure apparatus, the optical system becomes too high, and this is undesirable, because it cannot then be conveniently employed as a component of an exposure apparatus. On the other hand, if the lower limit of condition (4) is dropped below, then difficulties arise with proper correction for coma aberration, and as a result this leads to an undesirable deterioration of focusing performance. [0042]
  • Now, although the generation of high order spherical aberration is kept low if the above described conditions (1) and (2) are satisfied, the amount thereof which is generated cannot be kept completely to zero. Accordingly, with the present invention, it is desirable to form at least one of the plurality of optical surfaces which make up the optical system in an aspherical shape, in other words to introduce an aspherical lens surface into the optical system; and thereby it is possible almost completely to correct high order spherical aberration. [0043]
  • Further, with the present invention, it is desirable for the following condition (5) to be satisfied: [0044]
  • 0.01<|F2|/L<0.15   (5)
  • Here, F[0045] 2 is the focal length of the second lens group G2. Furthermore, as described above, L is the distance between the objective and the image.
  • This condition (5) is a condition relating to correction of Petzval sum in order to obtain flatness of the image plane. If the upper limit value for this condition (5) is exceeded, correction of Petzval sum becomes insufficient, and the flatness of the image plane is lost, which is undesirable. On the other hand, if the lower limit value for this condition (5) is dropped below, a remarkable amount of positive spherical aberration is generated, and it becomes difficult to correct this aberration even by using an aspherical surface as described above, so that this leads to a deterioration of focusing performance, which is undesirable. [0046]
  • It should be understood that, as described above, if the working distance D for this exposure apparatus is comparatively small, material which is outgassed from the resist can easily become adhered to the extreme lens surface towards the image side. As a result, the transparency of the extreme lens towards the image side is deteriorated, and along with this the optical performance of the projection optical system becomes worse. To combat this, with the present invention, it is desirable to prevent adherence of outgassed material to this optical surface by providing a predetermined flow of gas or liquid in the optical path between the optical surface closest to the image side of the fourth lens group G[0047] 4, and the wafer.
  • The preferred embodiments of the present invention will now be explained with reference to the appended drawings. FIG. 1 is a figure schematically showing the structure of an exposure apparatus equipped with a projection optical system [0048] 6 which is a preferred embodiment of the present invention. It should be understood that, in FIG. 1, the Z-axis is set as parallel to the optical axis AX of the projection optical system 6, the Y-axis is set as parallel to the plane of the drawing paper of FIG. 1 in the plane perpendicular to the optical axis AX, and the X-axis is set as perpendicular to the plane of the drawing paper.
  • The exposure apparatus shown in the drawing comprises a KrF excimer laser light source [0049] 1 (which generates light of a central wavelength of 248.40 nm) which serves as a light source for supplying illumination light. The light which is emitted from the light source 1 illuminates, via an illumination optical system 2, a mask (reticle) 3 upon which a predetermined pattern is formed. The mask 3 is maintained parallel to the X-Y plane upon a mask stage 5 by a mask holder 4. Furthermore, the mask stage 5 is made to be shiftable in the mask plane (in other words the X-Y plane) and position controlled by the action of a drive system which has been omitted from the drawing, and its positional coordinates are measured by mask interferometers (not shown in the drawing either).
  • Light from the pattern which is formed upon the mask [0050] 3 forms, via the projection optical system 6, a mask pattern image upon a wafer 7 which is a photosensitive substrate. This wafer 7 is maintained parallel to the X-Y plane upon a wafer stage 9 by a wafer table (wafer holder) 8. Furthermore, the wafer stage 9 is made to be shiftable in the wafer plane (in other words the X-Y plane) and position controlled by the action of a drive system which has been omitted from the drawing, and its positional coordinates are measured by wafer interferometers (not shown in the drawing either). In this manner, the pattern upon the mask 3 is successively exposed upon each exposure region of the wafer 7 by performing a single exposure or by performing scanning exposure while drive controlling the wafer 7 two dimensionally in the X-Y plane which is perpendicular to the optical axis AX of the 5 projection optical system 6.
  • Furthermore, with this exposure apparatus, a supply section [0051] 10 is provided for supplying gas or liquid, so as to create a predetermined flow of gas or liquid in the narrow optical path between the projection optical system 6 and the wafer 7. In other words, this supply section 10 constitutes a prevention means for preventing adherence of outgassed material from the resist which is coated upon the wafer 7 upon the lens surface in the projection optical system 6 which is closest to the wafer side. It should be understood that, if the supply section 10 supplies a gaseous substance such as air, it is desirable to provide a suction section 11 for sucking away the air including the outgassed material, in order reliably to keep the outgassed material away from the optical path.
  • Moreover, in each of the preferred embodiments which will be described hereinafter, the projection optical system according to the present invention comprises, in order from the mask side, a first lens group G[0052] 1 which has a positive refractive power, a second lens group G2 which has a negative refractive power, a third lens group G3 which has a positive refractive power, and a fourth lens group G4 which has a positive refractive power. Furthermore, in each of the preferred embodiments, for all of the optical members which constitute the projection optical system 6, there is used a quartz glass which has a refractive index of 1.50839 at the central wavelength of 248.40 nm.
  • Furthermore, in each of the preferred embodiments of the present invention, the aspherical surface is defined in the following Equation (a), where y is the height in the direction perpendicular to the optical axis, z is the distance (the sag amount) along the optical axis from the plane which contacts the summit of the aspherical surface to the position upon the aspherical surface which has the height y, r is the radius of curvature at the summit (the standard radius of curvature), k is the constant of the cone, and Cn is the aspherical coefficient of the nth order. It should be noted that, in each of the preferred embodiments, an asterisk is appended to the right of the surface number of each lens surface which is formed in an aspherical shape. [0053] z = ( y 2 / r ) / [ 1 + { 1 - ( 1 + k ) · y 2 / r 2 } 1 / 2 ] + C 4 · y 4 + C 6 · y 6 + C 8 · y 8 + C 10 · y 10 + C 12 · y 12 + C 14 · y 14 + C 16 · y 16 + C 18 · y 18 ( a )
    Figure US20030030916A1-20030213-M00001
  • EMBODIMENT ONE
  • FIG. 2 is a figure showing the structure of lenses of a projection optical system according to the first preferred embodiment of the present invention. In the lenses of FIG. 2, a first lens group G[0054] 1 comprises, in order from the mask side: a parallel plane plate P1; a positive meniscus lens L11 which presents its concave surface to the mask side; a positive meniscus lens L12 which presents its concave surface to the mask side; a biconvex lens L13; another biconvex lens L14; a biconcave lens L15; another biconcave lens L16; another biconcave lens L17; a biconcave lens L18 whose surface on the mask side is formed in an aspherical shape; a negative meniscus lens L19 which presents its concave surface to the mask side; a positive meniscus lens L110 which presents its concave surface which is formed in an aspherical shape to the mask side; a positive meniscus lens L111 which presents its concave surface to the mask side; another positive meniscus lens L112 which presents its concave surface to the mask side; a positive meniscus lens L113 which presents its convex surface to the mask side; another positive meniscus lens L114 which presents its convex surface to the mask side; and yet another positive meniscus lens L115 which presents its convex surface to the mask side.
  • Furthermore, a second lens group G[0055] 2 comprises, in order from the mask side: a negative meniscus lens L21 which presents its concave surface which is formed in an aspherical shape to the wafer side; a biconcave lens L22 of which both the surface towards the mask side and the surface towards the wafer side are formed in an aspherical shape; another biconcave lens L23 of which the surface towards the mask side is formed in an aspherical shape; and a negative meniscus lens L24 which presents its convex surface which is formed in an aspherical shape to the wafer side.
  • Yet further, a third lens group G[0056] 3 comprises, in order from the mask side: a positive meniscus lens L31 which presents its concave surface to the mask side; another positive meniscus lens L32 which presents its concave surface to the mask side; a biconvex lens L33 of which the surface towards the mask side is formed in an aspherical shape; another biconvex lens L34; a negative meniscus lens L35 which presents its concave surface to the mask side; a positive meniscus lens L36 which presents its convex surface to the mask side; another positive meniscus lens L37 which presents its convex surface to the mask side; and yet another positive meniscus lens L38 which presents its convex surface to the mask side.
  • Moreover, a fourth lens group G[0057] 4 comprises, in order from the mask side: a positive meniscus lens L41 which presents its convex surface to the mask side; a negative meniscus lens L42 which presents its convex surface to the mask side; and a positive meniscus lens L43 which presents its convex surface to the mask side. In this first preferred embodiment of the present invention, the supply section 1 is made so as to supply water (which has an index of refraction of 1.38 at the central wavelength of 248.40 nm), and it directs a flow of water so as to fill the narrow optical path between the projection optical system 6 and the wafer 7. In other words, the projection optical system 6 of this first preferred embodiment of the present invention is made as a water immersion type optical system.
  • The following Table 1 specifies all the data or parameters of the projection optical system according to this first preferred embodiment of the present invention. In the main data of Table 1, λ is the central wavelength of the exposure light, β is the projection magnification, Ym is the maximum image height, NA is the image side numerical aperture, and D is the working distance. Furthermore, Table 1 shows all the optical members in order from the wafer side, and in this table: the surface number in the first column is the sequential order of the surface from the wafer side; r in the second column is the radius of curvature of each surface in mm (in the case of an aspherical surface, this is the radius of curvature of the summit); d in the third column is the gap in mm along the optical axis between the surfaces, in other words the interval between the surfaces; and n in the fourth column is the index of refraction at the central wavelength λ. It should be understood that the radius of curvature r is a positive radius of curvature for a surface which is convex towards the wafer side, and is a negative radius of curvature for a surface which is concave towards the wafer side. [0058]
    TABLE 1
    (Main data)
    λ = 248.40 nm
    β = 1/5
    Ym = 11.6 mm
    NA = 0.89
    D = 0.5 mm
    (Optical member data)
    surface
    number r d n
    (wafer surface)
     1 0.500000 1.38000 (immersion liquid: water)
     2 −278.38803 81.380761 1.50839 (lens L43)
     3 −144.83885 1.000000
     4 −184.30485 18.915187 1.50839 (lens L42)
     5 −704.03874 4.822898
     6 −487.23542 38.288622 1.50839 (lens L41)
     7 −163.51870 1.068326
     8 −316.44413 39.899826 1.50839 (lens L38)
     9 −173.82425 1.166541
    10 −514.79368 38.713118 1.50839 (lens L37)
    11 −256.84706 2.993584
    12 −1486.19304 39.000000 1.50839 (lens L36)
    13 −349.92079 5.231160
    14 684.32388 30.000000 1.50839 (lens L35)
    15 535.80500 16.111594
    16 1423.09713 49.000000 1.50839 (lens L34)
    17 −417.61955 1.000000
    18 534.19578 48.373958 1.50839 (lens L33)
     19* −1079.65640 3.793818
    20 363.41400 41.353623 1.50839 (lens L32)
    21 11327.06579 1.000000
    22 221.09486 38.438778 1.50839 (lens L31)
    23 576.34104 13.483698
     24* 72641.42689 14.000000 1.50839 (lens L24)
    25 169.78783 36.502361
    26 −721.39710 14.000000 1.50839 (lens L23)
     27* 163.09868 55.546840
     28* −154.09821 14.000000 1.50839 (lens L22)
     29* 4602.19163 36.940676
     30* −162.70945 24.726155 1.50839 (lens L21)
    31 −277.47625 9.365299
    32 −233.72917 35.657146 1.50839  (lens L115)
    33 −199.92054 3.651342
    34 −760.94438 50.681020 1.50839  (lens L114)
    35 −267.98451 1.000000
    36 −8019.33680 51.000000 1.50839  (lens L113)
    37 −361.32067 1.000000
    38 359.57299 51.000000 1.50839  (lens L112)
    39 22205.61483 1.000000
    40 254.06189 53.118722 1.50839  (lens L111)
    41 814.49441 2.310847
    42 207.87392 41.299164 1.50839  (lens L110)
     43* 325.56504 2.944573
    44 227.90224 30.090705 1.50839 (lens L19)
    45 176.14016 30.818682
    46 −1560.80134 14.019437 1.50839 (lens L18)
     47* 211.19874 18.615775
    48 −419.25972 14.000000 1.50839 (lens L17)
    49 162.14317 19.137169
    50 −385.99461 14.000000 1.50839 (lens L16)
    51 377.23568 16.483492
    52 −192.32222 14.000000 1.50839 (lens L15)
    53 577.40909 1.000000
    54 347.51785 23.387796 1.50839 (lens L14)
    55 −746.67387 1.000000
    56 230.21868 28.789242 1.50839 (lens L13)
    57 −632.24530 1.987632
    58 366.04498 19.840462 1.50839 (lens L12)
    59 658.39254 1.000136
    60 436.06541 17.664657 1.50839 (lens L11)
    61 1827.22708 2.355320
    62 8.000000 1.50839 (parallel plane plate P1)
    63 31.664788
    (mask surface)
    (aspherical data)
    surface 19
     k = 0.000000
     C4 = 0.108661 × 10−11  C6 = 0.115990 × 10−13
     C8 = −0.252101 × 10−18 C10 = 0.326093 × 10−22
    C12 = −0.249918 × 10−26 C14 = 0.826218 × 10−31
    C16 = −0.105890 × 10−35 C18 = 0.000000
    surface 24
     k = 0.000000
     C4 = −0.666892 × 10−8  C6 = −0.834628 × 10−13
     C8 = 0.905999 × 10−17 C10 = −0.275733 × 10−21
    C12 = −0.577535 × 10−25 C14 = 0.700442 × 10−29
    C16 = −0.229827 × 10−33 C18 = 0.000000
    surface 27
     k = 0.000000
     C4 = 0.741662 × 10−9  C6 = −0.603176 × 10−12
     C8 = −0.996260 × 10−17 C10 = 0.500372 × 10−20
    C12 = −0.274589 × 10−23 C14 = 0.173610 × 10−27
    C16 = 0.556996 × 10−32 C18 = 0.000000
    surface 28
     k = 0.000000
     C4 = 0.398482 × 10−8  C6 = 0.375195 × 10−12
     C8 = −0.609480 × 10−16 C10 = −0.178686 × 10−19
    C12 = −0.112080 × 10−24 C14 = −0.141732 × 10−27
    C16 = 0.314821 × 10−31 C18 = 0.000000
    surface 29
     k = 0.000000
     C4 = −0.891861 × 10−8  C6 = 0.359788 × 10−12
     C8 = −0.218558 × 10−16 C10 = −0.633586 × 10−20
    C12 = −0.317617 × 10−24 C14 = 0.914859 × 10−28
    C16 = −0.392754 × 10−32 C18 = 0.000000
    surface 30
     k = 0.000000
     C4 = 0.217828 × 10−8  C6 = 0.199483 × 10−12
     C8 = 0.346439 × 10−16 C10 = 0.816535 × 10−21
    C12 = 0.143334 × 10−24 C14 = −0.229911 × 10−28
    C16 = −0.164178 × 10−32 C18 = 0.000000
    surface 43
     k = 0.000000
     C4 = 0.826617 × 10−9  C6 = −0.152893 × 10−12
     C8 = −0.105637 × 10−17 C10 = −0.904672 × 10−23
    C12 = −0.326047 × 10−25 C14 = −0.178192 × 10−30
    C16 = 0.656718 × 10−34 C18 = 0.000000
    surface 47
     k = 0.000000
     C4 = −0.374153 × 10−7  C6 = 0.139807 × 10−11
     C8 = −0.602273 × 10−16 C10 = −0.289281 × 10−19
    C12 = 0.109996 × 10−22 C14 = −0.966189 × 10−27
    C16 = 0.000000 C18 = 0.000000
    (values in the conditions)
    T = 138.58 mm
    L = 1323.13 mm
    F2 = −68.34 mm
    (1) D = 0.5
    (2) D/T = 0.003608
    (3) T/L = 0.1047
    (4) L = 1323.13
    (5) |F2|/L = 0.05165
  • FIG. 3 is a figure showing the coma aberration of this projection optical system according to the first preferred embodiment of the present invention. The aberration is given by the scale on the reticle side. As will be clear from this aberration figure, in this first preferred embodiment, even though the image side numerical aperture has been implemented as 0.89 which is extremely high, nevertheless it will be understood that the aberration is properly corrected. [0059]
  • EMBODIMENT TWO
  • FIG. 4 is a figure showing the structure of lenses of a projection optical system according to the second preferred embodiment of the present invention. In the lenses of FIG. 4, a first lens group G[0060] 1 comprises, in order from the mask side: a parallel plane plate P1; a biconvex lens L11; another biconvex lens L12; yet another biconvex lens L13; still yet another biconvex lens L14; a negative meniscus lens L15 which presents its convex surface to the mask side; a biconvex lens L16; another biconvex lens L17; yet another biconvex lens L18; a negative meniscus lens L19 which presents its concave surface to the mask side; a positive meniscus lens L110 which presents its concave surface to the mask side; another positive meniscus lens L111 which presents its concave surface to the mask side; a biconvex lens L112; another biconvex lens L113; a positive meniscus lens L114 which presents its convex surface to the mask side; and another positive meniscus lens L115 which presents its convex surface to the mask side.
  • Furthermore, a second lens group G[0061] 2 comprises, in order from the mask side: a negative meniscus lens L21 which presents its convex surface to the mask side; a negative meniscus lens L22 which whose concave surface on the wafer side is formed in an aspherical shape; a biconvex lens L23 whose surface on the mask side is formed in an aspherical shape; and a negative meniscus lens L24 whose convex surface on the wafer side is formed in an aspherical shape.
  • Yet further, a third lens group G[0062] 3 comprises, in order from the mask side: a positive meniscus lens L31 which presents its concave surface to the mask side; a biconvex lens L32; another biconvex lens L33; yet another biconvex lens L34; a negative meniscus lens L35 whose concave surface on the mask side is formed in an aspherical shape; a positive meniscus lens L36 which presents its convex surface to the mask side; another positive meniscus lens L37 which presents its convex surface to the mask side; and yet another positive meniscus lens L38 which presents its convex surface to the mask side.
  • Finally, a fourth lens group G[0063] 4 comprises, in order from the mask side: a positive meniscus lens L41 which presents its convex surface to the mask side; a negative meniscus lens L42 which presents its convex surface to the mask side; and a positive meniscus lens L43 which presents its convex surface to the mask side. In this second preferred embodiment of the present invention, the supply section 10 is made so as to supply air, so that a flow of air is generated in the narrow optical path between the projection optical system 6 and the wafer 7. It should be understood that, since the refractive index of air is 1.0, it is omitted from Table 1 and Table 2.
  • In the following Table 2, the various data or parameters of the projection optical system according to this second preferred embodiment of the present invention are detailed. In the main data of Table 2, λ is the central wavelength of the exposure light, β is the projection magnification, Ym is the maximum image height, NA is the image side numerical aperture, and D is the working distance. Furthermore, Table 2 shows all the optical members, and in this table: the surface number in the first column is the sequential order of the surface from the wafer side; r in the second column is the radius of curvature of each surface in mm (in the case of an aspherical surface, this is the radius of curvature of the summit); d in the third column is the gap in mm along the optical axis between the surfaces, in other words the interval between the surfaces; and n in the fourth column is the index of refraction at the central wavelength λ. It should be understood that the radius of curvature r is a positive radius of curvature for a surface which is convex towards the wafer side, and is a negative radius of curvature for a surface which is concave towards the wafer side. [0064]
    TABLE 2
    (Main data)
    λ = 248.40 nm
    β = 1/5
    Ym = 11.6 mm
    NA = 0.88
    D = 2.5 mm
    (Optical member data)
    Surface
    number r d n
    (wafer surface)
     1 2.500000
     2 −1270.40584 77.251684 1.50839 (lens L43)
     3 −110.72777 1.000000
     4 −132.78132 18.339030 1.50839 (lens L42)
     5 −1152.71012 4.938823
     6 −723.27523 38.179053 1.50839 (lens L41)
     7 −181.43794 1.050956
     8 −297.93827 41.055103 1.50839 (lens L38)
     9 −166.87288 2.382931
    10 −427.65954 40.104060 1.50839 (lens L37)
    11 −244.29595 4.903887
    12 −3387.32378 39.000000 1.50839 (lens L36)
    13 −420.50275 7.614732
    14 540.89354 29.000000 1.50839 (lens L35)
     15* 474.45854 15.158591
    16 897.00143 50.000000 1.50839 (lens L34)
    17 −506.01529 1.138429
    18 570.25291 48.910744 1.50839 (lens L33)
    19 −952.62514 5.055203
    20 378.82882 43.067991 1.50839 (lens L32)
    21 −78415.53819 1.000000
    22 258.78592 40.107177 1.50839 (lens L31)
    23 1095.44138 10.651612
     24* 4500.00000 14.000000 1.50839 (lens L24)
    25 189.07807 34.499414
    26 −808.48380 14.000000 1.50839 (lens L23)
     27* 177.87730 56.721169
     28* −143.78515 14.000000 1.50839 (lens L22)
    29 −2706.72147 35.781478
    30 −159.97919 24.199673 1.50839 (lens L21)
    31 −298.84455 8.626663
    32 −239.84826 35.242789 1.50839  (lens L115)
    33 −180.77301 1.706975
    34 −521.24921 49.373247 1.50839  (lens L114)
    35 −258.27460 1.000000
    36 8792.77756 51.000000 1.50839  (lens L113)
    37 −481.86914 1.000000
    38 336.67038 51.000000 1.50839  (lens L112)
    39 1368401.4891 5.064530
    40 261.20998 49.550014 1.50839  (lens L111)
    41 1066.67182 2.872022
    42 222.75670 41.276937 1.50839  (lens L110)
    43 309.81127 2.988277
    44 224.97144 30.049724 1.50839 (lens L19)
    45 178.92869 24.175760
    46 −4551.95559 14.140578 1.50839 (lens L18)
    47 163.47384 23.589033
    48 −435.59405 14.000000 1.50839 (lens L17)
    49 212.20765 20.350602
    50 −255.41661 14.000000 1.50839 (lens L16)
    51 476.81062 19.854085
    52 −166.35775 14.000000 1.50839 (lens L15)
    53 −3092.07241 1.000000
    54 1013.37837 21.280878 1.50839 (lens L14)
    55 −649.18244 14.095688
    56 562.23230 28.026479 1.50839 (lens L13)
    57 −495.38628 1.000000
    58 400.84453 30.179322 1.50839 (lens L12)
    59 −861.42926 1.000000
    60 1152.72543 51.631197 1.50839 (lens L11)
    61 −1403.48221 1.000057
    62 8.000000 1.50839 (parallel plane plate P1)
    63 59.860116
    (mask surface)
    (aspherical data)
    surface 15
     k = 0.135621
     C4 = 0.132068 × 10−9  C6 = 0.254077 × 10−14
     C8 = 0.520547 × 10−18 C10 = −0.100941 × 10−22
    C12 = 0.104925 × 10−27 C14 = 0.102740 × 10−31
    C16 = −0.510544 × 10−36 C18 = 0.909690 × 10−41
    surface 24
     k = 0.000000
     C4 = −0.757298 × 10−8  C6 = −0.194318 × 10−12
     C8 = 0.114312 × 10−16 C10 = 0.325024 × 10−21
    C12 = −0.811964 × 10−25 C14 = 0.733478 × 10−29
    C16 = −0.344978 × 10−33 C18 = 0.593551 × 10−38
    surface 27
     k = 0.000000
     C4 = 0.274792 × 10−8  C6 = −0.591295 × 10−12
     C8 = −0.101460 × 10−16 C10 = 0.649406 × 10−20
    C12 = −0.146673 × 10−23 C14 = 0.199948 × 10−27
    C16 = −0.110641 × 10−31 C18 = 0.153140 × 10−36
    surface 28
     k = 0.000000
     C4 = 0.181334 × 10−8  C6 = 0.386127 × 10−12
     C8 = 0.250729 × 10−16 C10 = −0.340803 × 10−20
    C12 = 0.956332 × 10−24 C14 = −0.123696 × 10−27
    C16 = 0.102868 × 10−31 C18 = −0.312692 × 10−36
    (values in the conditions)
    T = 133.77 mm
    L = 1407.55 mm
    F2 = −72.10 mm
    (1) D = 2.5
    (2) D/T = 0.01869
    (3) T/L = 0.09504
    (4) L = 1407.55
    (5) |F2|/L = 0.05122
  • FIG. 5 is a figure showing the coma aberration of this projection optical system according to the second preferred embodiment of the present invention. The aberration is given by the scale on the reticle side. As will be clear from this aberration figure, in this second preferred embodiment, even though the image side numerical aperture has been implemented as 0.88 which is extremely high, nevertheless it will be understood that the aberration is properly corrected. [0065]
  • EMBODIMENT THREE
  • FIG. 6 is a figure showing the structure of lenses of a projection optical system according to the third preferred embodiment of the present invention. In the lens of FIG. 6, a first lens group G[0066] 1 comprises, in order from the mask side: a biconcave lens L11; a biconvex lens L12; another biconvex lens L13; a positive meniscus lens L14 which presents its convex surface to the mask side; a negative meniscus lens L15 which presents its convex surface to the mask side; a biconcave lens L16; another biconcave lens L17; a positive meniscus lens L18 which presents its concave surface to the mask side; a biconvex lens L19; another biconvex lens L20; a positive meniscus lens L21 which presents its convex surface to the mask side; and another positive meniscus lens L22 which presents its convex surface to the mask side.
  • Furthermore, a second lens group G[0067] 2 comprises, in order from the mask side: a negative meniscus lens L23 which presents its convex surface to the mask side; another negative meniscus lens L24 which presents its convex surface to the mask side; a biconcave lens L25; and a negative meniscus lens L26 which presents its concave surface to the mask side.
  • Yet further, a third lens group G[0068] 3 comprises, in order from the mask side: a positive meniscus lens L27 which presents its concave surface to the mask side; a biconvex lens L28; another biconvex lens L29; a negative meniscus lens L30 which presents its convex surface to the mask side; a biconvex lens L31; and a positive meniscus lens L32 which presents its convex surface to the mask side.
  • Finally, a fourth lens group G[0069] 4 comprises, in order from the mask side: a positive meniscus lens L33 which presents its convex surface to the mask side; another positive meniscus lens L34 which presents its convex surface to the mask side; yet another positive meniscus lens L35 which presents its convex surface to the mask side; and a parallel plane plate P1.
  • In the following Table 3, the various data or parameters of the projection optical system according to this third preferred embodiment of the present invention are detailed. In the main data of Table 3, λ is the central wavelength of the exposure light, β is the projection magnification, Ym is the maximum image height, NA is the image side numerical aperture, and D is the working distance. Furthermore, Table 3 shows all the optical members, and in this table: the surface number in the first column is the sequential order of the surface from the wafer side; r in the second column is the radius of curvature of each surface in mm (in the case of an aspherical surface, this is the radius of curvature of the summit); d in the third column is the gap in mm along the optical axis between the surfaces, in other words the interval between the surfaces; and n in the fourth column is the index of refraction at the central wavelength λ. It should be understood that the radius of curvature r is a positive radius of curvature for a surface which is convex towards the wafer side, and is a negative radius of curvature for a surface which is concave towards the wafer side. [0070]
    TABLE 3
    (Main data)
    λ = 193.31 nm
    β = 1/4
    Ym = 11.6 mm
    NA = 0.85
    D = 4.8 mm
    (Optical member data)
    n = 1.560353 (quartz), n = 1.501474 (fluor)
    Surface
    number r d n
    (wafer surface)
     1 4.800000
     2 4.000000 1.501474 (parallel plane plate P1)
     3 1.516803
     4 −347.07689 59.005134 1.560353 (lens L35)
     5* −147.42602 24.672134
     6 −155.30862 36.048560 1.560353 (lens L34)
     7* −127.29829 3.818982
     8 −495.00000 41.252390 1.560353 (lens L33)
     9 −186.65984 1.837210
    10 −8649.91361 41.354410 1.560353 (lens L32)
    11 −338.42422 7.812864
    12 3117.31974 56.482714 1.501474 (lens L31)
    13 −242.28533 6.259672
    14 −219.07804 22.000000 1.560353 (lens L30)
    15 −295.48408 1.000000
    16 982.58745 35.100000 1.560353 (lens L29)
    17 −717.19251 1.027505
     18* 345.99292 35.100000 1.501474 (lens L28)
    19 −1657.34210 4.870546
    20 170.09691 43.238577 1.501474 (lens L27)
     21* 1247.60125 3.728285
    22 2570.01253 12.600000 1.560353 (lens L26)
     23* 140.20387 38.046549
    24 −302.07583 9.000000 1.560353 (lens L25)
    25 174.63448 47.228736
     26* −110.02031 11.990000 1.560353 (lens L24)
    27 −227.61981 19.287967
    28 −145.96360 13.625000 1.560353 (lens L23)
    29 −993.54187 2.180979
    30 −926.50000 49.004494 1.501474 (lens L22)
    31 −211.89314 1.805004
    32 −1634.25815 46.870000 1.560353 (lens L21)
    33 −309.72040 1.090000
    34 1870.87868 44.992783 1.560353 (lens L20)
    35 −397.39272 1.090000
    36 310.83083 46.730190 1.560353 (lens L19)
    37 −12381.83318 1.065257
    38 219.21300 43.890391 1.560353 (lens L18)
    39 459.28473 62.355122
     40* −1607.04793 23.010030 1.560353 (lens L17)
     41* 210.26262 27.392360
    42 −182.19964 11.990000 1.560353 (lens L16)
    43 397.04358 31.491045
    44 −126.09618 12.834065 1.560353 (lens L15)
    45 −4686.72757 31.683354
    46 −7627.00504 35.000000 1.560353 (lens L14)
    47 −178.80540 1.090000
    48 362.15153 35.000000 1.560353 (lens L13)
    49 −434.88773 1.000000
    50 217.92403 34.335000 1.560353 (lens L12)
    51 −854.29087 44.741881
    52 −293.27068 11.083963 1.560353 (lens L11)
    53 198.96759 58.442143
    (mask surface)
    (aspherical data)
    surface 5
     k = 0.000000
     C4 = −0.717239 × 10−08  C6 = −0.101122 × 10−11
     C8 = 0.181395 × 10−16 C10 = 0.626626 × 10−20
    C12 = 0.124335 × 10−23 C14 = 0.306352 × 10−27
    C16 = −0.451516 × 10−31 C18 = 0.000000
    surface 7
     k = 0.000000
     C4 = −0.171015 × 10−09  C6 = −0.130062 × 10−12
     C8 = −0.919066 × 10−17 C10 = −0.567556 × 10−22
    C12 = 0.169635 × 10−25 C14 = 0.232608 × 10−30
    C16 = 0.300428 × 10−35 C18 = 0.285031 × 10−38
    surface 18
     k = 0.000000
     C4 = 0.360694 × 10−09  C6 = 0.338660 × 10−13
     C8 = 0.880881 × 10−18 C10 = −0.289409 × 10−22
    C12 = −0.909784 × 10−27 C14 = 0.759036 × 10−31
    C16 = −0.400220 × 10−35 C18 = 0.235613 × 10−39
    surface 21
     k = 0.000000
     C4 = −0.139770 × 10−08  C6 = −0.642555 × 10−13
     C8 = 0.410206 × 10−17 C10 = 0.559358 × 10−21
    C12 = −0.314678 × 10−25 C14 = −0.577909 × 10−30
    C16 = 0.154846 × 10−33 C18 = −0.130804 × 10−37
    surface 23
     k = 0.000000
     C4 = −0.206235 × 10−08  C6 = −0.790155 × 10−13
     C8 = −0.830872 × 10−17 C10 = −0.678238 × 10−20
    C12 = −0.145920 × 10−23 C14 = −0.234851 × 10−28
    C16 = 0.259860 × 10−31 C18 = −0.223564 × 10−35
    surface 26
     k = 0.000000
     C4 = 0.226273 × 10−08  C6 = −0.406498 × 10−12
     C8 = −0.357047 × 10−17 C10 = −0.897263 × 10−21
    C12 = −0.510647 × 10−24 C14 = −0.322709 × 10−29
    C16 = 0.480022 × 10−32 C18 = −0.529104 × 10−36
    surface 40
     k = 0.000000
     C4 = −0.309170 × 10−08  C6 = −0.215102 × 10−12
     C8 = −0.403443 × 10−16 C10 = 0.485396 × 10−20
    C12 = 0.676821 × 10−25 C14 = −0.456289 × 10−28
    C16 = 0.323963 × 10−31 C18 = −0.337348 × 10−36
    surface 41
     k = 0.000000
     C4 = −0.156117 × 10−07  C6 = 0.118556 × 10−11
     C8 = −0.440276 × 10−16 C10 = −0.123461 × 10−19
    C12 = 0.933626 × 10−24 C14 = 0.134725 × 10−27
    C16 = −0.261036 × 10−31 C18 = 0.000000
    (values in the conditions)
    T = 172.15 mm
    L = 1246.87 mm
    F2 = −49.585 mm
    (1) D = 4.8
    (2) D/T = 0.02788
    (3) T/L = 0.13807
    (4) L = 1246.87
    (5) |F2|/L = 0.03977
  • FIG. 7 is a figure showing the coma aberration of this projection optical system according to the third preferred embodiment of the present invention. The coma aberration is given by the scale on the reticle side. As will be clear from this aberration figure, in this third preferred embodiment, even though the image side numerical aperture has been implemented as 0.85 which is quite high, nevertheless it will be understood that the aberration is properly corrected. [0071]
  • As described above, with the projection optical systems according to the various preferred embodiments of the present invention explained above, it is possible to keep the image side numerical aperture extremely high, along with restraining increase of the lens outer diameter. Accordingly, with the exposure apparatuses according to the first and second preferred embodiments of the present invention explained above, it is possible to perform projection exposure at high accuracy using a projection optical system of high resolution, based upon the use of KrF excimer laser beams. Furthermore, with the exposure apparatus according to the third preferred embodiment as described above, it is likewise possible to perform projection exposure at high accuracy using a projection optical system of high resolution, based upon the use of ArF excimer laser beams. [0072]
  • With the exposure apparatus according to the present invention as described above, it is possible to manufacture a microdevice (such as a semiconductor element, an image capturing element, a liquid crystal display element, a thin film magnetic head or the like) by illuminating the mask (reticle) via the illumination optical system (a so called illumination process), and by exposing a pattern which is formed upon the mask and which is to be transferred onto a photosensitive substrate via the projection optical system (a so called exposure process). In the following, an example of the procedure utilized when producing a micro device, which in this case is a semiconductor device, by forming a predetermined circuit pattern upon a wafer or the like, which serves as the photosensitive substrate, using the exposure apparatus according to the present invention as described above, will be explained with reference to the flow chart of FIG. 8. [0073]
  • First, in a step [0074] 301 of FIG. 8, a metallic layer is formed by vapor deposition upon a wafer in one lot Next, in a step 302, a photoresist is coated upon this metallic layer upon the wafer in one lot. After this, in a step 303, an image of a pattern upon a mask is exposed and transferred onto each shot region upon this wafer in one lot in order, using an exposure apparatus according to any of the preferred embodiments of the present invention as described above, via the projection optical system of this exposure apparatus. After this, in a step 304, the photoresist upon this wafer in one lot is developed, and then in a step 305 etching is performed upon the wafer in one lot with this resist pattern as a mask, so that a circuit pattern is formed upon each shot region of the wafer corresponding to the pattern upon the mask. After this, devices such as semiconductor elements or the like are manufactured by forming circuit patterns on further upper layers or the like. According to the above described method of semiconductor device manufacture, it is possible to obtain semiconductor devices having an extremely minute circuit pattern with good throughput.
  • Furthermore it is possible, by utilizing the exposure apparatus according to the present invention as described above, to obtain a microdevice, which in this case is a liquid crystal display element, by forming predetermined patterns (a circuit pattern, an electrode pattern, and the like) upon a plate (a glass substrate). In the following, an example of the procedure utilized in this case will be explained with reference to the flow chart of FIG. 9. Referring to this figure, first in a pattern formation process [0075] 401 a so called photolithography process is performed by exposing and transferring an image of a pattern upon a mask onto a photosensitive substrate (a glass substrate or the like which is coated with a resist), using an exposure apparatus according to any of the preferred embodiments of the present invention as described above, via the projection optical system of this exposure apparatus. A predetermined pattern including a large number of electrodes or the like is formed upon the photosensitive substrate by this photolithography process. After this, various processes such as a development process, an etching process, a resist removing process and the like are performed upon this substrate which has been exposed, so that the predetermined pattern is formed upon the substrate, and next a color filter formation process 402 is started.
  • In this color filter formation process [0076] 402, a color filter is formed in which a large number of groups of three dots which correspond to R (red), G (green), and B (blue) are arranged in a matrix pattern, or a plurality of groups of three R, G, and B filter stripes are arranged in the horizontal scan line direction. And after this color filter formation process, a cell assembly process 403 is performed. In this cell assembly process, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern which was produced in the pattern formation process 401, and the color filter which was produced in the color filter formation process 402. In this cell assembly process, for example, a quantity of liquid crystal material is introduced between the substrate having the predetermined pattern which was produced in the pattern formation process 401, and the color filter which was produced in the color filter formation process 402, and thereby a liquid crystal panel (a liquid crystal cell) is manufactured.
  • After this, in a module assembly process [0077] 404, various further elements such as an electrical circuit which performs display operation for this liquid crystal panel (liquid crystal cell) which has been thus assembled, a backlight, and the like are fitted thereto, and thereby the manufacture of the liquid crystal display element is completed. It is possible to manufacture liquid crystal display elements having an extremely fine circuit pattern with good throughput, according to the above described method for liquid crystal display element manufacture.
  • It should be understood that, although the above explanation of various preferred embodiments of the present invention was made in terms of the use of a KrF excimer laser light source as the light source, this is not to be considered as being limitative of the present invention; for example, it would also be possible to utilize an ArF excimer laser light source (of wavelength 193 nm) as the light source; and other suitable possibilities could also be exploited. [0078]
  • Furthemore, although the above explanation of various preferred embodiments of the projection optical system of the present invention was made, by way of example, in terms of the projection optical system being fitted to an exposure apparatus, it will be clearly understood that it is possible to apply the present invention to any projection optical system for forming an image of a first object upon a second object. [0079]

Claims (11)

    What is claimed is:
  1. 1. A projection optical system whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprising:
    a first lens group G1 of positive refractive power;
    a second lens group G2 of negative refractive power;
    a third lens group G3 of positive refractive power; and
    a fourth lens group G4 of positive refractive power, wherein:
    the first lens group G1, the second lens group G2, the third lens group G3 and the fourth lens group G4 are arranged in order from a side of the first object; and
    a distance D in mm along an optical axis between an optical surface of the fourth lens group G4 closest to the second object, and the second object, satisfies a condition of 0.1<D<5.
  2. 2. A projection optical system according to claim 1, wherein the projection optical system has an image side numerical aperture greater than or equal to 0.8.
  3. 3. A projection optical system according to claim 1, wherein, with T being a sum of thicknesses along the optical axis of all optical members included in the fourth lens group G4, and with D being the distance along the optical axis between the optical surface of the fourth lens group G4 closest to the second object, and the second object, a condition of 0.001<D/T<0.2 is satisfied.
  4. 4. A projection optical system according to claim 1, wherein, with T being a sum of the thicknesses along the optical axis of all optical members included in the fourth lens group G4, and with L being a distance along the optical axis between the first object and the second object, a condition of 0.02<T/L is satisfied.
  5. 5. A projection optical system according to claim 1, wherein a distance L in mm along the optical axis between the first object and the second object satisfies a condition of 800<L<1600.
  6. 6. A projection optical system according to claim 1, wherein a focal length F2 of the second lens group G2 and a distance L in mm along the optical axis between the first object and the second object satisfy a condition of 0.01<|F2|/L<0.15.
  7. 7. A projection optical system according to claim 1, wherein at least one of a plurality of optical surfaces comprised in the projection optical system is formed in an aspherical shape.
  8. 8. An exposure apparatus, comprising:
    an illumination system for illuminating a mask as a first object;
    a projection optical system according to claim 1, that forms an image of a pattern which is formed upon the mask upon a photosensitive substrate as the second object; and
    a prevention device that prevents gas which is generated from the photosensitive substrate from adhering to the optical surface closest to the second object of the fourth lens group G4 of the projection optical system.
  9. 9. An exposure apparatus according to claim 8, wherein the prevention device comprises a flow forming device that forms a predetermined flow of gas or liquid in a optical path between the optical surface closest to the second object of the fourth lens group G4 and the photosensitive substrate.
  10. 10. An exposure method, comprising:
    an illumination process of illuminating a mask as a first object; and
    an exposure process of exposing, via a projection optical system according to claim 1, an image of a pattern which is formed upon the mask upon a photosensitive substrate as the second object, wherein
    the exposure process comprises a flow formation process of forming a predetermined flow of gas or liquid in a optical path between the optical surface closest to the second object of the fourth lens group G4 and the photosensitive substrate, in order to prevent gas which is generated from the photosensitive substrate from adhering to the optical surface closest to the second object of the fourth lens group G4.
  11. 11. A method for manufacturing a microdevice, comprising:
    an exposure process of exposing a pattern on a mask upon a photosensitive substrate, using an exposure method according to claim 10; and
    a development process of developing the photosensitive substrate which has been exposed by the exposure process.
US10006667 2000-12-11 2001-12-10 Projection optical system and exposure apparatus having the projection optical system Active US6633365B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000375992 2000-12-11
JP2000-375992 2000-12-11

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10628744 US6844919B2 (en) 2000-12-11 2003-07-30 Projection optical system and exposure apparatus having the projection optical system
US10925965 US20050024617A1 (en) 2000-12-11 2004-08-26 Projection optical system and exposure apparatus having the projection optical system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10628744 Continuation US6844919B2 (en) 2000-12-11 2003-07-30 Projection optical system and exposure apparatus having the projection optical system

Publications (2)

Publication Number Publication Date
US20030030916A1 true true US20030030916A1 (en) 2003-02-13
US6633365B2 US6633365B2 (en) 2003-10-14

Family

ID=18844916

Family Applications (3)

Application Number Title Priority Date Filing Date
US10006667 Active US6633365B2 (en) 2000-12-11 2001-12-10 Projection optical system and exposure apparatus having the projection optical system
US10628744 Expired - Fee Related US6844919B2 (en) 2000-12-11 2003-07-30 Projection optical system and exposure apparatus having the projection optical system
US10925965 Abandoned US20050024617A1 (en) 2000-12-11 2004-08-26 Projection optical system and exposure apparatus having the projection optical system

Family Applications After (2)

Application Number Title Priority Date Filing Date
US10628744 Expired - Fee Related US6844919B2 (en) 2000-12-11 2003-07-30 Projection optical system and exposure apparatus having the projection optical system
US10925965 Abandoned US20050024617A1 (en) 2000-12-11 2004-08-26 Projection optical system and exposure apparatus having the projection optical system

Country Status (2)

Country Link
US (3) US6633365B2 (en)
KR (1) KR100866818B1 (en)

Cited By (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004019128A2 (en) * 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20040228001A1 (en) * 2000-12-22 2004-11-18 Carl Zeiss Semiconductor Manufacturing Technologies Ag. Lithographic objective having a first lens group including only lenses having a positive refractive power
US20050007569A1 (en) * 2003-05-13 2005-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050030498A1 (en) * 2003-07-28 2005-02-10 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US20050048220A1 (en) * 2003-07-31 2005-03-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050073670A1 (en) * 2003-10-03 2005-04-07 Micronic Laser Systems Ab Method and device for immersion lithography
US20050078287A1 (en) * 2003-08-29 2005-04-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005050321A1 (en) * 2003-10-22 2005-06-02 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US20050128445A1 (en) * 2003-10-28 2005-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050175776A1 (en) * 2003-11-14 2005-08-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050175940A1 (en) * 2004-02-11 2005-08-11 Asml Netherlands B.V. Device manufacturing method and a substrate
WO2005081067A1 (en) 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US20050219490A1 (en) * 2002-12-10 2005-10-06 Nikon Corporation Exposure apparatus and method for producing device
US20050219489A1 (en) * 2002-12-10 2005-10-06 Nikon Corporation Exposure apparatus and method for producing device
US20050219488A1 (en) * 2002-12-10 2005-10-06 Nikon Corporation Exposure apparatus and method for producing device
US20050225734A1 (en) * 2004-04-08 2005-10-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050225735A1 (en) * 2002-12-10 2005-10-13 Nikon Corporation Exposure apparatus and method for producing device
US20050225738A1 (en) * 2002-12-10 2005-10-13 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US20050231694A1 (en) * 2004-04-14 2005-10-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050237504A1 (en) * 2002-12-10 2005-10-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20050259234A1 (en) * 2002-12-10 2005-11-24 Nikon Corporation Exposure apparatus and device manufacturing method
US20050259232A1 (en) * 2004-05-18 2005-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050264774A1 (en) * 2002-12-10 2005-12-01 Nikon Corporation Exposure apparatus and method for producing device
US20050263068A1 (en) * 2003-10-28 2005-12-01 Asml Netherlands B.V. Lithographic apparatus
US20060001981A1 (en) * 2003-03-17 2006-01-05 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US20060007419A1 (en) * 2004-07-07 2006-01-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060012765A1 (en) * 2003-03-25 2006-01-19 Nikon Corporation Exposure apparatus and device fabrication method
US20060017900A1 (en) * 2003-04-17 2006-01-26 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US20060023182A1 (en) * 2003-04-10 2006-02-02 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20060023188A1 (en) * 2003-04-07 2006-02-02 Nikon Corporation Exposure apparatus and method for manufacturing device
US20060023184A1 (en) * 2003-04-09 2006-02-02 Nikon Corporation Immersion lithography fluid control system
US20060023183A1 (en) * 2003-04-11 2006-02-02 Nikon Corporation Liquid jet and recovery system for immersion lithography
US20060023187A1 (en) * 2003-04-10 2006-02-02 Nikon Corporation Environmental system including an electro-osmotic element for an immersion lithography apparatus
US20060023181A1 (en) * 2003-04-10 2006-02-02 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US20060023189A1 (en) * 2002-11-12 2006-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060028632A1 (en) * 2003-04-10 2006-02-09 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20060033894A1 (en) * 2003-04-11 2006-02-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20060061747A1 (en) * 2003-05-15 2006-03-23 Nikon Corporation Exposure apparatus and device manufacturing method
US20060077367A1 (en) * 2003-05-23 2006-04-13 Nikon Corporation Exposure apparatus and method for producing device
US20060082744A1 (en) * 2003-05-28 2006-04-20 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20060092533A1 (en) * 2003-07-01 2006-05-04 Nikon Corporation Using isotopically specified fluids as optical elements
US20060098177A1 (en) * 2003-05-23 2006-05-11 Nikon Corporation Exposure method, exposure apparatus, and exposure method for producing device
US20060103832A1 (en) * 2003-07-08 2006-05-18 Nikon Corporation Wafer table for immersion lithography
US20060103944A1 (en) * 2003-07-09 2006-05-18 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US20060114445A1 (en) * 2003-06-19 2006-06-01 Nikon Corporation Exposure apparatus, and device manufacturing method
US20060119809A1 (en) * 2004-12-07 2006-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060119818A1 (en) * 2003-07-09 2006-06-08 Nikon Corporation Exposure apparatus and method for manufacturing device
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060132737A1 (en) * 2003-07-28 2006-06-22 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US20060139614A1 (en) * 2003-06-13 2006-06-29 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US20060139594A1 (en) * 2003-08-29 2006-06-29 Nikon Corporation Exposure apparatus and device fabricating method
US20060146306A1 (en) * 2003-02-26 2006-07-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060152697A1 (en) * 2003-09-03 2006-07-13 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20060158628A1 (en) * 2005-01-14 2006-07-20 Asml Netherlands B.V. Lithographic apparatus and device and device manufacturing method
US20060176456A1 (en) * 2003-07-09 2006-08-10 Nikon Corporation Exposure apparatus and device manufacturing method
US20060181690A1 (en) * 2003-09-29 2006-08-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060187432A1 (en) * 2003-10-09 2006-08-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060203218A1 (en) * 2003-08-26 2006-09-14 Nikon Corporation Optical element and exposure apparatus
US20060231206A1 (en) * 2003-09-19 2006-10-19 Nikon Corporation Exposure apparatus and device manufacturing method
US20060232756A1 (en) * 2002-11-12 2006-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250602A1 (en) * 2003-10-08 2006-11-09 Zao Nikon Co., Ltd. Substrate carrying apparatus, exposure apparatus, and device manufacturing method
US20060291060A1 (en) * 2003-08-26 2006-12-28 Takeshi Shirai Optical element and exposure apparatus
US20070024960A1 (en) * 2003-05-06 2007-02-01 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US20070066452A1 (en) * 2005-09-22 2007-03-22 William Marshall Recliner exerciser
US20070064212A1 (en) * 2003-12-15 2007-03-22 Nikon Corporation Projection exposure apparatus and stage unit, and exposure method
US20070070316A1 (en) * 2004-01-20 2007-03-29 Albrecht Ehrmann Microlithographic projection exposure apparatus and measuring device for a projection lens
US20070076181A1 (en) * 2003-07-25 2007-04-05 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7203008B2 (en) 2002-03-08 2007-04-10 Carl Zeiss Smt Ag Very high-aperture projection objective
US20070081136A1 (en) * 2004-03-25 2007-04-12 Nikon Corporation Exposure apparatus and device fabrication method
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
US20070103655A1 (en) * 2003-07-28 2007-05-10 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US20070110916A1 (en) * 2003-10-08 2007-05-17 Zao Nikon Co., Ltd. Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US20070109517A1 (en) * 2004-02-03 2007-05-17 Nikon Corporation Exposure apparatus and device manufacturing method
US20070109521A1 (en) * 2003-12-15 2007-05-17 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method
US20070115450A1 (en) * 2003-12-03 2007-05-24 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US20070128482A1 (en) * 2005-12-06 2007-06-07 Lg Electronics Inc. Power supply apparatus and method for line connection type fuel cell system
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
US20070127006A1 (en) * 2004-02-02 2007-06-07 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20070132970A1 (en) * 2002-11-12 2007-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070132975A1 (en) * 2003-04-11 2007-06-14 Nikon Corporation Cleanup method for optics in immersion lithography
US20070132979A1 (en) * 2003-06-09 2007-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007071569A1 (en) * 2005-12-23 2007-06-28 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US20070182945A1 (en) * 2004-07-12 2007-08-09 Makoto Shibuta Exposure apparatus and device manufacturing method
US20070222967A1 (en) * 2004-05-04 2007-09-27 Nikon Corporation Apparatus and Method for Providing Fluid for Immersion Lithography
US20070252964A1 (en) * 2005-01-31 2007-11-01 Nikon Corporation Exposure apparatus and method for producing device
US20070258134A1 (en) * 2003-09-09 2007-11-08 Hans-Juergen Rostalski Lithography Lens System And Projection Exposure System Provided With At Least One Lithography Lens System Of This Type
US20070258152A1 (en) * 2003-12-02 2007-11-08 Carl Zeiss Smt Ag Projection Optical System
US20070263182A1 (en) * 2004-08-18 2007-11-15 Nikon Corporation Exposure Apparatus and Device Manufacturing Method
US20070268594A1 (en) * 2004-12-30 2007-11-22 Carl Zeiss Smt Ag Projection Optical System
US20070291239A1 (en) * 2004-06-09 2007-12-20 Kenichi Shiraishi Exposure Apparatus and Device Manufacturing Method
US20080007844A1 (en) * 2005-02-28 2008-01-10 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080198343A1 (en) * 2007-02-15 2008-08-21 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US20080212170A1 (en) * 2004-01-14 2008-09-04 Carl Zeiss Smt Ag Catadioptric projection objective
US20080225246A1 (en) * 2007-03-15 2008-09-18 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US20080291419A1 (en) * 2003-12-19 2008-11-27 Carl Zeiss Smt Ag Projection objective for immersion lithography
US20090040389A1 (en) * 2007-08-09 2009-02-12 Mstar Semiconductor, Inc Gamma correction apparatus
US20090135385A1 (en) * 2006-05-09 2009-05-28 Carl Zeiss Smt Ag Optical imaging device with thermal attenuation
US20090190208A1 (en) * 2004-01-14 2009-07-30 Carl Zeiss Smt Ag Catadioptric projection objective
US20090244514A1 (en) * 2008-03-26 2009-10-01 Samsung Electronics Co., Ltd. Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
US7602470B2 (en) 2004-08-19 2009-10-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090257049A1 (en) * 2002-12-20 2009-10-15 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US20090296065A1 (en) * 2008-05-28 2009-12-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100182576A1 (en) * 2003-12-23 2010-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898645B2 (en) 2003-10-08 2011-03-01 Zao Nikon Co., Ltd. Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US20110162100A1 (en) * 2009-12-28 2011-06-30 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
US20110222036A1 (en) * 2005-12-30 2011-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
CN103278912A (en) * 2013-06-19 2013-09-04 中国科学院光电技术研究所 Reflective type ultra-violet lithography objective lens
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
EP3067750A3 (en) * 2004-06-10 2017-03-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101349876B (en) 2002-11-12 2010-12-01 Asml荷兰有限公司 Immersion lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100588123B1 (en) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
DE60335595D1 (en) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographic apparatus with immersion and method for manufacturing a device
KR100588125B1 (en) * 2002-11-18 2006-06-09 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
DE60319658T2 (en) * 2002-11-29 2009-04-02 Asml Netherlands B.V. A lithographic apparatus and method for manufacturing a device
US7804574B2 (en) * 2003-05-30 2010-09-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method using acidic liquid
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60308161T2 (en) 2003-06-27 2007-08-09 Asml Netherlands B.V. A lithographic apparatus and method for producing an article
EP1975721A1 (en) * 2003-06-30 2008-10-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1500982A1 (en) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
KR100659257B1 (en) 2003-08-29 2006-12-19 에이에스엠엘 네델란즈 비.브이. Lithographic Apparatus and Device Manufacturing Method
US7113259B2 (en) * 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1519230A1 (en) * 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7158211B2 (en) * 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (en) 2003-09-29 2006-08-03 Asml Netherlands B.V. A lithographic apparatus and method for manufacturing a device
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050273590A1 (en) * 2004-06-04 2005-12-08 Asustek Computer Inc. Multiple over-clocking main board and control method thereof
US7481867B2 (en) * 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
JP4608253B2 (en) * 2004-07-06 2011-01-12 オリンパス株式会社 Immersion objective optical system
US7161663B2 (en) * 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
JP4621451B2 (en) * 2004-08-11 2011-01-26 富士フイルム株式会社 Protective film-forming composition for immersion exposure and a pattern forming method using the same
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US7133114B2 (en) * 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060060653A1 (en) * 2004-09-23 2006-03-23 Carl Wittenberg Scanner system and method for simultaneously acquiring data images from multiple object planes
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7894040B2 (en) * 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7209213B2 (en) * 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145630B2 (en) * 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060119811A1 (en) * 2004-12-07 2006-06-08 Asml Netherlands B.V. Radiation exposure apparatus comprising a gas flushing system
US7248334B2 (en) * 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US7535644B2 (en) * 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
RU177949U1 (en) * 2017-05-31 2018-03-16 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) Photolithographic projection lens

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5781278A (en) * 1996-04-25 1998-07-14 Nikon Corporation Projection optical system and exposure apparatus with the same
US5856884A (en) * 1997-09-05 1999-01-05 Nikon Corporation Projection lens systems
US5973764A (en) * 1997-06-19 1999-10-26 Svg Lithography Systems, Inc. Vacuum assisted debris removal system
US6252662B1 (en) * 1997-10-14 2001-06-26 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method using the same
US6259508B1 (en) * 1998-01-22 2001-07-10 Nikon Corporation Projection optical system and exposure apparatus and method
US6459534B1 (en) * 1999-06-14 2002-10-01 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus with the same, and device manufacturing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS6349893B2 (en) * 1981-03-18 1988-10-06 Hitachi Ltd
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JP3454390B2 (en) * 1995-01-06 2003-10-06 株式会社ニコン A projection optical system, a projection exposure apparatus and the projection exposure method
JPH09106458A (en) * 1995-10-12 1997-04-22 Dainippon Printing Co Ltd Image processing method
KR100446130B1 (en) * 1996-04-25 2005-07-04 가부시키가이샤 니콘 The projection optical system and exposure apparatus and the exposure method
JP3747566B2 (en) 1997-04-23 2006-02-22 株式会社ニコン The liquid immersion type exposure apparatus
JPH116957A (en) * 1997-04-25 1999-01-12 Nikon Corp Projection optical system, projection exposure system and projection exposure method
WO1999049504A1 (en) 1998-03-26 1999-09-30 Nikon Corporation Projection exposure method and system
JP2000121934A (en) 1998-10-16 2000-04-28 Nikon Corp Projection optical system
WO2001023935A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection exposure method and apparatus and projection optical system
WO2001023933A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
US20020163629A1 (en) * 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
DE10210899A1 (en) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection objective for immersion lithography

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5781278A (en) * 1996-04-25 1998-07-14 Nikon Corporation Projection optical system and exposure apparatus with the same
US5973764A (en) * 1997-06-19 1999-10-26 Svg Lithography Systems, Inc. Vacuum assisted debris removal system
US5856884A (en) * 1997-09-05 1999-01-05 Nikon Corporation Projection lens systems
US6252662B1 (en) * 1997-10-14 2001-06-26 Canon Kabushiki Kaisha Projection exposure apparatus and device manufacturing method using the same
US6259508B1 (en) * 1998-01-22 2001-07-10 Nikon Corporation Projection optical system and exposure apparatus and method
US6459534B1 (en) * 1999-06-14 2002-10-01 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus with the same, and device manufacturing method

Cited By (690)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060176573A1 (en) * 2000-12-22 2006-08-10 Carl Zeiss Semiconductor Manufacturing Technologies Ag Lithographic objective having a first lens group including only lenses having a positive refractive power
US7289279B2 (en) 2000-12-22 2007-10-30 Carl Zeiss Semiconductor Manufacturing Technologies Ag Lithographic objective having a first lens group including only lenses having a positive refractive power
US20040228001A1 (en) * 2000-12-22 2004-11-18 Carl Zeiss Semiconductor Manufacturing Technologies Ag. Lithographic objective having a first lens group including only lenses having a positive refractive power
US7023627B2 (en) * 2000-12-22 2006-04-04 Carl Zeiss Semiconductor Manufacturing Technologies Ag Lithographic objective having a first lens group including only lenses having a positive refractive power
US7203008B2 (en) 2002-03-08 2007-04-10 Carl Zeiss Smt Ag Very high-aperture projection objective
US20070188880A1 (en) * 2002-03-08 2007-08-16 Carl Zeiss Smt Ag Very high-aperture projection objective
US7495840B2 (en) 2002-03-08 2009-02-24 Karl-Heinz Schuster Very high-aperture projection objective
US7551362B2 (en) 2002-08-23 2009-06-23 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7688517B2 (en) 2002-08-23 2010-03-30 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20080068724A1 (en) * 2002-08-23 2008-03-20 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20080068573A1 (en) * 2002-08-23 2008-03-20 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20080068576A1 (en) * 2002-08-23 2008-03-20 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
WO2004019128A2 (en) * 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7362508B2 (en) 2002-08-23 2008-04-22 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20080094696A1 (en) * 2002-08-23 2008-04-24 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7609455B2 (en) 2002-08-23 2009-10-27 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US20080049306A1 (en) * 2002-08-23 2008-02-28 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7701640B2 (en) 2002-08-23 2010-04-20 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7619827B2 (en) 2002-08-23 2009-11-17 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
WO2004019128A3 (en) * 2002-08-23 2004-10-28 Hironori Ikezawa Projection optical system and method for photolithography and exposure apparatus and method using same
US20050248856A1 (en) * 2002-08-23 2005-11-10 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US7580197B2 (en) 2002-08-23 2009-08-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US9740107B2 (en) 2002-11-12 2017-08-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070132970A1 (en) * 2002-11-12 2007-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8208120B2 (en) 2002-11-12 2012-06-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7388648B2 (en) 2002-11-12 2008-06-17 Asml Netherlands B.V. Lithographic projection apparatus
US9057967B2 (en) 2002-11-12 2015-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8472002B2 (en) 2002-11-12 2013-06-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110001942A1 (en) * 2002-11-12 2011-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7593093B2 (en) 2002-11-12 2009-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070268471A1 (en) * 2002-11-12 2007-11-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9091940B2 (en) 2002-11-12 2015-07-28 Asml Netherlands B.V. Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US20060232756A1 (en) * 2002-11-12 2006-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8558989B2 (en) 2002-11-12 2013-10-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080218726A1 (en) * 2002-11-12 2008-09-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060023189A1 (en) * 2002-11-12 2006-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7982850B2 (en) 2002-11-12 2011-07-19 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with gas supply
US20110170077A1 (en) * 2002-11-12 2011-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7593092B2 (en) 2002-11-12 2009-09-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8797503B2 (en) 2002-11-12 2014-08-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method with a liquid inlet above an aperture of a liquid confinement structure
US20110128514A1 (en) * 2002-12-10 2011-06-02 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US7589821B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and device manufacturing method
US20090180089A1 (en) * 2002-12-10 2009-07-16 Nikon Corporation Exposure apparatus and method for producing device
US7446851B2 (en) 2002-12-10 2008-11-04 Nikon Corporation Exposure apparatus and device manufacturing method
US20070263196A1 (en) * 2002-12-10 2007-11-15 Nikon Corporation Exposure apparatus and device manufacturing method
US20060126043A1 (en) * 2002-12-10 2006-06-15 Nikon Corporation Exposure apparatus and method for producing device
US20070258063A1 (en) * 2002-12-10 2007-11-08 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060098178A1 (en) * 2002-12-10 2006-05-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7379158B2 (en) 2002-12-10 2008-05-27 Nikon Corporation Exposure apparatus and method for producing device
US8294876B2 (en) 2002-12-10 2012-10-23 Nikon Corporation Exposure apparatus and device manufacturing method
US20070258064A1 (en) * 2002-12-10 2007-11-08 Nikon Corporation Exposure apparatus and device manufacturing method
US20050264774A1 (en) * 2002-12-10 2005-12-01 Nikon Corporation Exposure apparatus and method for producing device
US7515246B2 (en) 2002-12-10 2009-04-07 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060119820A1 (en) * 2002-12-10 2006-06-08 Nikon Corporation Exposure apparatus and device manufacturing method
US20050259234A1 (en) * 2002-12-10 2005-11-24 Nikon Corporation Exposure apparatus and device manufacturing method
US7639343B2 (en) 2002-12-10 2009-12-29 Nikon Corporation Exposure apparatus and device manufacturing method
US20050237504A1 (en) * 2002-12-10 2005-10-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060126044A1 (en) * 2002-12-10 2006-06-15 Nikon Corporation Exposure apparatus and method for producing device
US20060132738A1 (en) * 2002-12-10 2006-06-22 Nikon Corporation Exposure apparatus and device manufacturing method
US20060132736A1 (en) * 2002-12-10 2006-06-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20050225738A1 (en) * 2002-12-10 2005-10-13 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US20050225735A1 (en) * 2002-12-10 2005-10-13 Nikon Corporation Exposure apparatus and method for producing device
US20050219488A1 (en) * 2002-12-10 2005-10-06 Nikon Corporation Exposure apparatus and method for producing device
EP1571700A4 (en) * 2002-12-10 2007-09-12 Nikon Corp Optical device and projection exposure apparatus using such optical device
US20050219489A1 (en) * 2002-12-10 2005-10-06 Nikon Corporation Exposure apparatus and method for producing device
US20070171391A1 (en) * 2002-12-10 2007-07-26 Nikon Corporation Exposure apparatus and method for producing device
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
US7817244B2 (en) 2002-12-10 2010-10-19 Nikon Corporation Exposure apparatus and method for producing device
US20060154183A1 (en) * 2002-12-10 2006-07-13 Nikon Corporation Exposure apparatus and method for producing device
US7834976B2 (en) 2002-12-10 2010-11-16 Nikon Corporation Exposure apparatus and method for producing device
US20060152699A1 (en) * 2002-12-10 2006-07-13 Nikon Corporation Exposure apparatus and method for producing device
US20050219490A1 (en) * 2002-12-10 2005-10-06 Nikon Corporation Exposure apparatus and method for producing device
US20060164615A1 (en) * 2002-12-10 2006-07-27 Nikon Corporation Exposure apparatus and device manufacturing method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7876418B2 (en) 2002-12-10 2011-01-25 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US8089611B2 (en) 2002-12-10 2012-01-03 Nikon Corporation Exposure apparatus and method for producing device
US20060250596A1 (en) * 2002-12-10 2006-11-09 Nikon Corporation Exposure apparatus and method for producing device
US20110051106A1 (en) * 2002-12-10 2011-03-03 Nikon Corporation Exposure apparatus and device manufacturing method
US20060209285A1 (en) * 2002-12-10 2006-09-21 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US20090079950A1 (en) * 2002-12-10 2009-03-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8034539B2 (en) 2002-12-10 2011-10-11 Nikon Corporation Exposure apparatus and method for producing device
US20080151203A1 (en) * 2002-12-10 2008-06-26 Nikon Corporation Exposure apparatus and device manufacturing method
US20060238730A1 (en) * 2002-12-10 2006-10-26 Nikon Corporation Exposure apparatus and method for producing device
US7505111B2 (en) 2002-12-10 2009-03-17 Nikon Corporation Exposure apparatus and device manufacturing method
US20070115447A1 (en) * 2002-12-10 2007-05-24 Nikon Corporation Exposure apparatus and device manufacturing method
US8767173B2 (en) 2002-12-10 2014-07-01 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US7466392B2 (en) 2002-12-10 2008-12-16 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060274294A1 (en) * 2002-12-10 2006-12-07 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7911582B2 (en) 2002-12-10 2011-03-22 Nikon Corporation Exposure apparatus and device manufacturing method
US20070024832A1 (en) * 2002-12-10 2007-02-01 Nikon Corporation Exposure apparatus and method for producing device
US8004650B2 (en) 2002-12-10 2011-08-23 Nikon Corporation Exposure apparatus and device manufacturing method
US20070030468A1 (en) * 2002-12-10 2007-02-08 Nikon Corporation Optical element and projection exposure apparatus based on use of the optical element
US20070035710A1 (en) * 2002-12-10 2007-02-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070035711A1 (en) * 2002-12-10 2007-02-15 Nikon Corporation Exposure apparatus and method for producing device
US7460207B2 (en) 2002-12-10 2008-12-02 Nikon Corporation Exposure apparatus and method for producing device
US7436487B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and method for producing device
US7436486B2 (en) 2002-12-10 2008-10-14 Nikon Corporation Exposure apparatus and device manufacturing method
US20070115448A1 (en) * 2002-12-10 2007-05-24 Nikon Corporation Exposure apparatus and device manufacturing method
US7589820B2 (en) 2002-12-10 2009-09-15 Nikon Corporation Exposure apparatus and method for producing device
US8836929B2 (en) 2002-12-20 2014-09-16 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8120763B2 (en) 2002-12-20 2012-02-21 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US20090257049A1 (en) * 2002-12-20 2009-10-15 Carl Zeiss Smt Ag Device and method for the optical measurement of an optical system by using an immersion fluid
US20070258065A1 (en) * 2003-02-26 2007-11-08 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060274293A1 (en) * 2003-02-26 2006-12-07 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7932991B2 (en) 2003-02-26 2011-04-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9182684B2 (en) 2003-02-26 2015-11-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070263183A1 (en) * 2003-02-26 2007-11-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060146306A1 (en) * 2003-02-26 2006-07-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7268854B2 (en) 2003-02-26 2007-09-11 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070263186A1 (en) * 2003-02-26 2007-11-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8102504B2 (en) 2003-02-26 2012-01-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9766555B2 (en) 2003-02-26 2017-09-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7911583B2 (en) 2003-02-26 2011-03-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7453550B2 (en) 2003-02-26 2008-11-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070258067A1 (en) * 2003-02-26 2007-11-08 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9348239B2 (en) 2003-02-26 2016-05-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7907254B2 (en) 2003-02-26 2011-03-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7542128B2 (en) 2003-02-26 2009-06-02 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7535550B2 (en) 2003-02-26 2009-05-19 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8736809B2 (en) 2003-02-26 2014-05-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7907253B2 (en) 2003-02-26 2011-03-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060001981A1 (en) * 2003-03-17 2006-01-05 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US7457042B2 (en) 2003-03-17 2008-11-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US20060012765A1 (en) * 2003-03-25 2006-01-19 Nikon Corporation Exposure apparatus and device fabrication method
US8558987B2 (en) 2003-03-25 2013-10-15 Nikon Corporation Exposure apparatus and device fabrication method
US7471371B2 (en) 2003-03-25 2008-12-30 Nikon Corporation Exposure apparatus and device fabrication method
US8804095B2 (en) 2003-03-25 2014-08-12 Nikon Corporation Exposure apparatus and device fabrication method
US20070109516A1 (en) * 2003-03-25 2007-05-17 Nikon Corporation Exposure apparatus and device fabrication method
US20060268249A1 (en) * 2003-03-25 2006-11-30 Nikon Corporation Exposure apparatus and device fabrication method
US7916272B2 (en) 2003-03-25 2011-03-29 Nikon Corporation Exposure apparatus and device fabrication method
US8018570B2 (en) 2003-03-25 2011-09-13 Nikon Corporation Exposure apparatus and device fabrication method
US7480029B2 (en) 2003-04-07 2009-01-20 Nikon Corporation Exposure apparatus and method for manufacturing device
US8111375B2 (en) 2003-04-07 2012-02-07 Nikon Corporation Exposure apparatus and method for manufacturing device
US20080291410A1 (en) * 2003-04-07 2008-11-27 Nikon Corporation Exposure apparatus and method for manufacturing device
US20060023188A1 (en) * 2003-04-07 2006-02-02 Nikon Corporation Exposure apparatus and method for manufacturing device
US8537331B2 (en) 2003-04-07 2013-09-17 Nikon Corporation Exposure apparatus and method for manufacturing device
US20060033901A1 (en) * 2003-04-07 2006-02-16 Nikon Corporation Exposure apparatus and method for manufacturing device
US20090075212A1 (en) * 2003-04-09 2009-03-19 Nikon Corporation Immersion lithography fluid control system
US8102501B2 (en) 2003-04-09 2012-01-24 Nikon Corporation Immersion lithography fluid control system using an electric or magnetic field generator
US20060023184A1 (en) * 2003-04-09 2006-02-02 Nikon Corporation Immersion lithography fluid control system
US9618852B2 (en) 2003-04-09 2017-04-11 Nikon Corporation Immersion lithography fluid control system regulating flow velocity of gas based on position of gas outlets
US20070268468A1 (en) * 2003-04-09 2007-11-22 Nikon Corporation Immersion lithography fluid control system
US8797500B2 (en) 2003-04-09 2014-08-05 Nikon Corporation Immersion lithography fluid control system changing flow velocity of gas outlets based on motion of a surface
US20090075211A1 (en) * 2003-04-09 2009-03-19 Nikon Corporation Immersion lithography fluid control system
US20070263184A1 (en) * 2003-04-09 2007-11-15 Nikon Corporation Immersion lithography fluid control system
US20070115453A1 (en) * 2003-04-09 2007-05-24 Nikon Corporation Immersion lithography fluid control system
US7339650B2 (en) 2003-04-09 2008-03-04 Nikon Corporation Immersion lithography fluid control system that applies force to confine the immersion liquid
US8497973B2 (en) 2003-04-09 2013-07-30 Nikon Corporation Immersion lithography fluid control system regulating gas velocity based on contact angle
US7397532B2 (en) 2003-04-10 2008-07-08 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US9244362B2 (en) 2003-04-10 2016-01-26 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20070132974A1 (en) * 2003-04-10 2007-06-14 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9658537B2 (en) 2003-04-10 2017-05-23 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20070252962A1 (en) * 2003-04-10 2007-11-01 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US8456610B2 (en) 2003-04-10 2013-06-04 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20070252961A1 (en) * 2003-04-10 2007-11-01 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9977350B2 (en) 2003-04-10 2018-05-22 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20060114435A1 (en) * 2003-04-10 2006-06-01 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US8243253B2 (en) 2003-04-10 2012-08-14 Nikon Corporation Lyophobic run-off path to collect liquid for an immersion lithography apparatus
US20110037959A1 (en) * 2003-04-10 2011-02-17 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20070258062A1 (en) * 2003-04-10 2007-11-08 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9007561B2 (en) 2003-04-10 2015-04-14 Nikon Corporation Immersion lithography apparatus with hydrophilic region encircling hydrophobic region which encircles substrate support
US7965376B2 (en) 2003-04-10 2011-06-21 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20070247603A1 (en) * 2003-04-10 2007-10-25 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9910370B2 (en) 2003-04-10 2018-03-06 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7929110B2 (en) 2003-04-10 2011-04-19 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US8836914B2 (en) 2003-04-10 2014-09-16 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US8810768B2 (en) 2003-04-10 2014-08-19 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20070103662A1 (en) * 2003-04-10 2007-05-10 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US8089610B2 (en) 2003-04-10 2012-01-03 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US9632427B2 (en) 2003-04-10 2017-04-25 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20070139631A1 (en) * 2003-04-10 2007-06-21 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7929111B2 (en) 2003-04-10 2011-04-19 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US8830443B2 (en) 2003-04-10 2014-09-09 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20060023182A1 (en) * 2003-04-10 2006-02-02 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US9244363B2 (en) 2003-04-10 2016-01-26 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20080239261A1 (en) * 2003-04-10 2008-10-02 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US7251017B2 (en) 2003-04-10 2007-07-31 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7969552B2 (en) 2003-04-10 2011-06-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US7321415B2 (en) 2003-04-10 2008-01-22 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US7456930B2 (en) 2003-04-10 2008-11-25 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US7355676B2 (en) 2003-04-10 2008-04-08 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20060023187A1 (en) * 2003-04-10 2006-02-02 Nikon Corporation Environmental system including an electro-osmotic element for an immersion lithography apparatus
KR101129213B1 (en) * 2003-04-10 2012-03-27 가부시키가이샤 니콘 Run-off path to collect liquid for an immersion lithography apparatus
US20080030704A1 (en) * 2003-04-10 2008-02-07 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20090180096A1 (en) * 2003-04-10 2009-07-16 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20060033899A1 (en) * 2003-04-10 2006-02-16 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US20060028632A1 (en) * 2003-04-10 2006-02-09 Nikon Corporation Environmental system including vacuum scavenge for an immersion lithography apparatus
US7345742B2 (en) 2003-04-10 2008-03-18 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
US20060023181A1 (en) * 2003-04-10 2006-02-02 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
US8035795B2 (en) 2003-04-11 2011-10-11 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the protection lens during wafer exchange in an immersion lithography machine
US20090161084A1 (en) * 2003-04-11 2009-06-25 Nikon Corporation Cleanup method for optics in immersion lithography
US20090174872A1 (en) * 2003-04-11 2009-07-09 Nikon Corporation Cleanup method for optics in immersion lithography
US8269944B2 (en) 2003-04-11 2012-09-18 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7327435B2 (en) 2003-04-11 2008-02-05 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20080074634A1 (en) * 2003-04-11 2008-03-27 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20060023183A1 (en) * 2003-04-11 2006-02-02 Nikon Corporation Liquid jet and recovery system for immersion lithography
US7545479B2 (en) 2003-04-11 2009-06-09 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20090195762A1 (en) * 2003-04-11 2009-08-06 Nikon Corporation Cleanup method for optics in immersion lithography
US20060033894A1 (en) * 2003-04-11 2006-02-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9329493B2 (en) 2003-04-11 2016-05-03 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7372538B2 (en) 2003-04-11 2008-05-13 Nikon Corporation Apparatus and method for maintaining immerison fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20080100813A1 (en) * 2003-04-11 2008-05-01 Nikon Corporation Cleanup method for optics in immersion lithography
US20070273857A1 (en) * 2003-04-11 2007-11-29 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8351019B2 (en) 2003-04-11 2013-01-08 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9304409B2 (en) 2003-04-11 2016-04-05 Nikon Corporation Liquid jet and recovery system for immersion lithography
US8848168B2 (en) 2003-04-11 2014-09-30 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US7522259B2 (en) 2003-04-11 2009-04-21 Nikon Corporation Cleanup method for optics in immersion lithography
US8848166B2 (en) 2003-04-11 2014-09-30 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8488100B2 (en) 2003-04-11 2013-07-16 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8493545B2 (en) 2003-04-11 2013-07-23 Nikon Corporation Cleanup method for optics in immersion lithography supplying cleaning liquid onto a surface of object below optical element, liquid supply port and liquid recovery port
US20070252965A1 (en) * 2003-04-11 2007-11-01 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8514367B2 (en) 2003-04-11 2013-08-20 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20070247601A1 (en) * 2003-04-11 2007-10-25 Nikon Corporation Cleanup method for optics in immersion lithography
US20070247602A1 (en) * 2003-04-11 2007-10-25 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8879047B2 (en) 2003-04-11 2014-11-04 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens using a pad member or second stage during wafer exchange in an immersion lithography machine
US20070216886A1 (en) * 2003-04-11 2007-09-20 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20100203455A1 (en) * 2003-04-11 2010-08-12 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US9785057B2 (en) 2003-04-11 2017-10-10 Nikon Corporation Liquid jet and recovery system for immersion lithography
US20070171390A1 (en) * 2003-04-11 2007-07-26 Nikon Corporation Cleanup method for optics in immersion lithography
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US9500960B2 (en) 2003-04-11 2016-11-22 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20070132975A1 (en) * 2003-04-11 2007-06-14 Nikon Corporation Cleanup method for optics in immersion lithography
US8085381B2 (en) 2003-04-11 2011-12-27 Nikon Corporation Cleanup method for optics in immersion lithography using sonic device
US8610875B2 (en) 2003-04-11 2013-12-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8634057B2 (en) 2003-04-11 2014-01-21 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20110031416A1 (en) * 2003-04-11 2011-02-10 Nikon Corporation Liquid jet and recovery system for immersion lithography
US8059258B2 (en) 2003-04-11 2011-11-15 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9081298B2 (en) 2003-04-11 2015-07-14 Nikon Corporation Apparatus for maintaining immersion fluid in the gap under the projection lens during wafer exchange using a co-planar member in an immersion lithography machine
US7932989B2 (en) 2003-04-11 2011-04-26 Nikon Corporation Liquid jet and recovery system for immersion lithography
US9946163B2 (en) 2003-04-11 2018-04-17 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8670103B2 (en) 2003-04-11 2014-03-11 Nikon Corporation Cleanup method for optics in immersion lithography using bubbles
US8670104B2 (en) 2003-04-11 2014-03-11 Nikon Corporation Cleanup method for optics in immersion lithography with cleaning liquid opposed by a surface of object
US7443482B2 (en) 2003-04-11 2008-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
US20110026000A1 (en) * 2003-04-11 2011-02-03 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US8269946B2 (en) 2003-04-11 2012-09-18 Nikon Corporation Cleanup method for optics in immersion lithography supplying cleaning liquid at different times than immersion liquid
US7570431B2 (en) 2003-04-17 2009-08-04 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US9086636B2 (en) 2003-04-17 2015-07-21 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US8810915B2 (en) 2003-04-17 2014-08-19 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US20060017900A1 (en) * 2003-04-17 2006-01-26 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US8953250B2 (en) 2003-04-17 2015-02-10 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US8599488B2 (en) 2003-04-17 2013-12-03 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US20070076303A1 (en) * 2003-04-17 2007-04-05 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US20090262322A1 (en) * 2003-04-17 2009-10-22 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US8018657B2 (en) 2003-04-17 2011-09-13 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US7414794B2 (en) 2003-04-17 2008-08-19 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US20090317751A1 (en) * 2003-04-17 2009-12-24 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US8094379B2 (en) 2003-04-17 2012-01-10 Nikon Corporation Optical arrangement of autofocus elements for use with immersion lithography
US9086635B2 (en) 2003-05-06 2015-07-21 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9933705B2 (en) 2003-05-06 2018-04-03 Nikon Corporation Reduction projection optical system, exposure apparatus, and exposure method
US20070024960A1 (en) * 2003-05-06 2007-02-01 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9081295B2 (en) 2003-05-06 2015-07-14 Nikon Corporation Catadioptric projection optical system, exposure apparatus, and exposure method
US9606443B2 (en) 2003-05-06 2017-03-28 Nikon Corporation Reducing immersion projection optical system
US9500943B2 (en) 2003-05-06 2016-11-22 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US9846366B2 (en) 2003-05-06 2017-12-19 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
US20050007569A1 (en) * 2003-05-13 2005-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US7352434B2 (en) 2003-05-13 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080218717A1 (en) * 2003-05-13 2008-09-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8724083B2 (en) 2003-05-13 2014-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7936444B2 (en) 2003-05-13 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9798246B2 (en) 2003-05-13 2017-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8964164B2 (en) 2003-05-13 2015-02-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110181859A1 (en) * 2003-05-13 2011-07-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8724084B2 (en) 2003-05-13 2014-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7385674B2 (en) 2003-05-15 2008-06-10 Nikon Corporation Exposure apparatus and device manufacturing method
US20060061747A1 (en) * 2003-05-15 2006-03-23 Nikon Corporation Exposure apparatus and device manufacturing method
US20060152698A1 (en) * 2003-05-15 2006-07-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7359034B2 (en) 2003-05-15 2008-04-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8488108B2 (en) 2003-05-23 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8072576B2 (en) 2003-05-23 2011-12-06 Nikon Corporation Exposure apparatus and method for producing device
US7399979B2 (en) 2003-05-23 2008-07-15 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20070064210A1 (en) * 2003-05-23 2007-03-22 Nikon Corporation Exposure apparatus and method for producing device
US9285684B2 (en) 2003-05-23 2016-03-15 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US7495744B2 (en) 2003-05-23 2009-02-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8780327B2 (en) 2003-05-23 2014-07-15 Nikon Corporation Exposure apparatus and method for producing device
US8472001B2 (en) 2003-05-23 2013-06-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8125612B2 (en) 2003-05-23 2012-02-28 Nikon Corporation Exposure apparatus and method for producing device
US9977336B2 (en) 2003-05-23 2018-05-22 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US9939739B2 (en) 2003-05-23 2018-04-10 Nikon Corporation Exposure apparatus and method for producing device
US7388649B2 (en) 2003-05-23 2008-06-17 Nikon Corporation Exposure apparatus and method for producing device
US8760617B2 (en) 2003-05-23 2014-06-24 Nikon Corporation Exposure apparatus and method for producing device
US20070247600A1 (en) * 2003-05-23 2007-10-25 Nikon Corporation Exposure apparatus and method for producing device
US20080030696A1 (en) * 2003-05-23 2008-02-07 Nikon Corporation Exposure apparatus and method for producing device
US20080030695A1 (en) * 2003-05-23 2008-02-07 Nikon Corporation Exposure apparatus and method for producing device
US9354525B2 (en) 2003-05-23 2016-05-31 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20070121089A1 (en) * 2003-05-23 2007-05-31 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20090009745A1 (en) * 2003-05-23 2009-01-08 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8134682B2 (en) 2003-05-23 2012-03-13 Nikon Corporation Exposure apparatus and method for producing device
US20060077367A1 (en) * 2003-05-23 2006-04-13 Nikon Corporation Exposure apparatus and method for producing device
US8169592B2 (en) 2003-05-23 2012-05-01 Nikon Corporation Exposure apparatus and method for producing device
US20080225250A1 (en) * 2003-05-23 2008-09-18 Nikon Corporation Exposure apparatus and method for producing device
US20110199594A1 (en) * 2003-05-23 2011-08-18 Nikon Corporation Exposure apparatus and method for producing device
US20060098177A1 (en) * 2003-05-23 2006-05-11 Nikon Corporation Exposure method, exposure apparatus, and exposure method for producing device
US20080225249A1 (en) * 2003-05-23 2008-09-18 Nikon Corporation Exposure apparatus and method for producing device
US20070132968A1 (en) * 2003-05-23 2007-06-14 Nikon Corporation Exposure apparatus and method for producing device
US20080231825A1 (en) * 2003-05-23 2008-09-25 Nikon Corporation Exposure Apparatus and method for producing device
US9933708B2 (en) 2003-05-23 2018-04-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8174668B2 (en) 2003-05-23 2012-05-08 Nikon Corporation Exposure apparatus and method for producing device
US9304392B2 (en) 2003-05-23 2016-04-05 Nikon Corporation Exposure apparatus and method for producing device
US8384877B2 (en) 2003-05-23 2013-02-26 Nikon Corporation Exposure apparatus and method for producing device
US20090104568A1 (en) * 2003-05-28 2009-04-23 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8233133B2 (en) 2003-05-28 2012-07-31 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20060098179A1 (en) * 2003-05-28 2006-05-11 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20060082744A1 (en) * 2003-05-28 2006-04-20 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US10082739B2 (en) 2003-05-28 2018-09-25 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US9488920B2 (en) 2003-05-28 2016-11-08 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8711324B2 (en) 2003-05-28 2014-04-29 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US8421992B2 (en) 2003-05-28 2013-04-16 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US7483117B2 (en) 2003-05-28 2009-01-27 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
US8482845B2 (en) 2003-06-09 2013-07-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9541843B2 (en) 2003-06-09 2017-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a sensor detecting a radiation beam through liquid
US20070132979A1 (en) * 2003-06-09 2007-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8154708B2 (en) 2003-06-09 2012-04-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9081299B2 (en) 2003-06-09 2015-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving removal of liquid entering a gap
US9110389B2 (en) 2003-06-11 2015-08-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9964858B2 (en) 2003-06-11 2018-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100128235A1 (en) * 2003-06-11 2010-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8363208B2 (en) 2003-06-11 2013-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060139614A1 (en) * 2003-06-13 2006-06-29 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US9846371B2 (en) 2003-06-13 2017-12-19 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US9268237B2 (en) 2003-06-13 2016-02-23 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US20090015808A1 (en) * 2003-06-13 2009-01-15 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US20060227312A1 (en) * 2003-06-13 2006-10-12 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US8040491B2 (en) 2003-06-13 2011-10-18 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US20090015816A1 (en) * 2003-06-13 2009-01-15 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US7483119B2 (en) 2003-06-13 2009-01-27 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US20080117394A1 (en) * 2003-06-13 2008-05-22 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US8384880B2 (en) 2003-06-13 2013-02-26 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US9019467B2 (en) 2003-06-13 2015-04-28 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US8208117B2 (en) 2003-06-13 2012-06-26 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
US8830445B2 (en) 2003-06-19 2014-09-09 Nikon Corporation Exposure apparatus, and device manufacturing method
US8018575B2 (en) 2003-06-19 2011-09-13 Nikon Corporation Exposure apparatus, and device manufacturing method
US20060132739A1 (en) * 2003-06-19 2006-06-22 Nikon Corporation Exposure apparatus, and device manufacturing method
US9025129B2 (en) 2003-06-19 2015-05-05 Nikon Corporation Exposure apparatus, and device manufacturing method
US8319941B2 (en) 2003-06-19 2012-11-27 Nikon Corporation Exposure apparatus, and device manufacturing method
US20080002166A1 (en) * 2003-06-19 2008-01-03 Nikon Corporation Exposure apparatus, and device manufacturing method
US7321419B2 (en) 2003-06-19 2008-01-22 Nikon Corporation Exposure apparatus, and device manufacturing method
US8027027B2 (en) 2003-06-19 2011-09-27 Nikon Corporation Exposure apparatus, and device manufacturing method
US20110025996A1 (en) * 2003-06-19 2011-02-03 Nikon Corporation Exposure apparatus, and device manufacturing method
US9551943B2 (en) 2003-06-19 2017-01-24 Nikon Corporation Exposure apparatus and device manufacturing method
US9274437B2 (en) 2003-06-19 2016-03-01 Nikon Corporation Exposure apparatus and device manufacturing method
US7812925B2 (en) 2003-06-19 2010-10-12 Nikon Corporation Exposure apparatus, and device manufacturing method
US9810995B2 (en) 2003-06-19 2017-11-07 Nikon Corporation Exposure apparatus and device manufacturing method
US8436979B2 (en) 2003-06-19 2013-05-07 Nikon Corporation Exposure apparatus, and device manufacturing method
US8436978B2 (en) 2003-06-19 2013-05-07 Nikon Corporation Exposure apparatus, and device manufacturing method
US10007188B2 (en) 2003-06-19 2018-06-26 Nikon Corporation Exposure apparatus and device manufacturing method
US8767177B2 (en) 2003-06-19 2014-07-01 Nikon Corporation Exposure apparatus, and device manufacturing method
US7486385B2 (en) 2003-06-19 2009-02-03 Nikon Corporation Exposure apparatus, and device manufacturing method
US8705001B2 (en) 2003-06-19 2014-04-22 Nikon Corporation Exposure apparatus, and device manufacturing method
US8724085B2 (en) 2003-06-19 2014-05-13 Nikon Corporation Exposure apparatus, and device manufacturing method
US9019473B2 (en) 2003-06-19 2015-04-28 Nikon Corporation Exposure apparatus and device manufacturing method
US9001307B2 (en) 2003-06-19 2015-04-07 Nikon Corporation Exposure apparatus and device manufacturing method
US8717537B2 (en) 2003-06-19 2014-05-06 Nikon Corporation Exposure apparatus, and device manufacturing method
US20060114445A1 (en) * 2003-06-19 2006-06-01 Nikon Corporation Exposure apparatus, and device manufacturing method
US8692976B2 (en) 2003-06-19 2014-04-08 Nikon Corporation Exposure apparatus, and device manufacturing method
US20070211234A1 (en) * 2003-06-19 2007-09-13 Nikon Corporation Exposure apparatus, and device manufacturing method
US20070064214A1 (en) * 2003-06-19 2007-03-22 Nikon Corporation Exposure apparatus, and device manufacturing method
US20070195302A1 (en) * 2003-07-01 2007-08-23 Nikon Corporation Using isotopically specified fluids as optical elements
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
US20070053090A1 (en) * 2003-07-01 2007-03-08 Nikon Corporation Using isotopically specified fluids as optical elements
US7224435B2 (en) 2003-07-01 2007-05-29 Nikon Corporation Using isotopically specified fluids as optical elements
US20060092533A1 (en) * 2003-07-01 2006-05-04 Nikon Corporation Using isotopically specified fluids as optical elements
US7301607B2 (en) 2003-07-08 2007-11-27 Nikon Corporation Wafer table for immersion lithography
US20070076182A1 (en) * 2003-07-08 2007-04-05 Nikon Corporation Wafer table for immersion lithography
US7486380B2 (en) 2003-07-08 2009-02-03 Nikon Corporation Wafer table for immersion lithography
US20060103832A1 (en) * 2003-07-08 2006-05-18 Nikon Corporation Wafer table for immersion lithography
US8508718B2 (en) 2003-07-08 2013-08-13 Nikon Corporation Wafer table having sensor for immersion lithography
US20090109418A1 (en) * 2003-07-08 2009-04-30 Nikon Corporation Wafer table for immersion lithography
US8120751B2 (en) 2003-07-09 2012-02-21 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US7580114B2 (en) 2003-07-09 2009-08-25 Nikon Corporation Exposure apparatus and method for manufacturing device
US9097988B2 (en) 2003-07-09 2015-08-04 Nikon Corporation Exposure apparatus and device manufacturing method
US20060103944A1 (en) * 2003-07-09 2006-05-18 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US7379157B2 (en) 2003-07-09 2008-05-27 Nikon Corproation Exposure apparatus and method for manufacturing device
US9500959B2 (en) 2003-07-09 2016-11-22 Nikon Corporation Exposure apparatus and device manufacturing method
US20070263193A1 (en) * 2003-07-09 2007-11-15 Nikon Corporation Exposure apparatus and method for manufacturing device
US20060176456A1 (en) * 2003-07-09 2006-08-10 Nikon Corporation Exposure apparatus and device manufacturing method
US20080186465A1 (en) * 2003-07-09 2008-08-07 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US20060119818A1 (en) * 2003-07-09 2006-06-08 Nikon Corporation Exposure apparatus and method for manufacturing device
US20060126045A1 (en) * 2003-07-09 2006-06-15 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US8879043B2 (en) 2003-07-09 2014-11-04 Nikon Corporation Exposure apparatus and method for manufacturing device
US20080018873A1 (en) * 2003-07-09 2008-01-24 Nikon Corporation Exposure apparatus and method for manufacturing device
US7508490B2 (en) 2003-07-09 2009-03-24 Nikon Corporation Exposure apparatus and device manufacturing method
US7855777B2 (en) 2003-07-09 2010-12-21 Nikon Corporation Exposure apparatus and method for manufacturing device
US8228484B2 (en) 2003-07-09 2012-07-24 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US20100007865A1 (en) * 2003-07-09 2010-01-14 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US7619715B2 (en) 2003-07-09 2009-11-17 Nikon Corporation Coupling apparatus, exposure apparatus, and device fabricating method
US8218127B2 (en) 2003-07-09 2012-07-10 Nikon Corporation Exposure apparatus and device manufacturing method
US8797505B2 (en) 2003-07-09 2014-08-05 Nikon Corporation Exposure apparatus and device manufacturing method
US9977352B2 (en) 2003-07-09 2018-05-22 Nikon Corporation Exposure apparatus and device manufacturing method
US7843550B2 (en) 2003-07-25 2010-11-30 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US20070076181A1 (en) * 2003-07-25 2007-04-05 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US7868997B2 (en) 2003-07-25 2011-01-11 Nikon Corporation Projection optical system inspecting method and inspection apparatus, and a projection optical system manufacturing method
US8964163B2 (en) 2003-07-28 2015-02-24 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with a projection system having a part movable relative to another part
US20060146305A1 (en) * 2003-07-28 2006-07-06 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US8218125B2 (en) 2003-07-28 2012-07-10 Asml Netherlands B.V. Immersion lithographic apparatus with a projection system having an isolated or movable part
US7483118B2 (en) 2003-07-28 2009-01-27 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7746445B2 (en) 2003-07-28 2010-06-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US8451424B2 (en) 2003-07-28 2013-05-28 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US8749757B2 (en) 2003-07-28 2014-06-10 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US20050030498A1 (en) * 2003-07-28 2005-02-10 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US20060132737A1 (en) * 2003-07-28 2006-06-22 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US20070103655A1 (en) * 2003-07-28 2007-05-10 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US9760026B2 (en) 2003-07-28 2017-09-12 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US9494871B2 (en) 2003-07-28 2016-11-15 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US20090201476A1 (en) * 2003-07-28 2009-08-13 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US9639006B2 (en) 2003-07-28 2017-05-02 Asml Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US7505115B2 (en) 2003-07-28 2009-03-17 Nikon Corporation Exposure apparatus, method for producing device, and method for controlling exposure apparatus
US8142852B2 (en) 2003-07-31 2012-03-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050048220A1 (en) * 2003-07-31 2005-03-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
US9285686B2 (en) 2003-07-31 2016-03-15 Asml Netherlands B.V. Lithographic apparatus involving an immersion liquid supply system with an aperture
US9046796B2 (en) 2003-08-26 2015-06-02 Nikon Corporation Optical element and exposure apparatus
US8189170B2 (en) 2003-08-26 2012-05-29 Nikon Corporation Optical element and exposure apparatus
US20060203218A1 (en) * 2003-08-26 2006-09-14 Nikon Corporation Optical element and exposure apparatus
US20060291060A1 (en) * 2003-08-26 2006-12-28 Takeshi Shirai Optical element and exposure apparatus
US7993008B2 (en) 2003-08-26 2011-08-09 Nikon Corporation Optical element and exposure apparatus
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
US20090103070A1 (en) * 2003-08-26 2009-04-23 Nikon Corporation Optical element and exposure apparatus
US9316919B2 (en) 2003-08-29 2016-04-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070132971A1 (en) * 2003-08-29 2007-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8035798B2 (en) 2003-08-29 2011-10-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9223224B2 (en) 2003-08-29 2015-12-29 Nikon Corporation Exposure apparatus with component from which liquid is protected and/or removed and device fabricating method
US8947637B2 (en) 2003-08-29 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7907255B2 (en) 2003-08-29 2011-03-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050078287A1 (en) * 2003-08-29 2005-04-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10025204B2 (en) 2003-08-29 2018-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060139594A1 (en) * 2003-08-29 2006-06-29 Nikon Corporation Exposure apparatus and device fabricating method
US9568841B2 (en) 2003-08-29 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9817319B2 (en) 2003-09-03 2017-11-14 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8896807B2 (en) 2003-09-03 2014-11-25 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20060152697A1 (en) * 2003-09-03 2006-07-13 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8520187B2 (en) 2003-09-03 2013-08-27 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US9547243B2 (en) 2003-09-03 2017-01-17 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20090296053A1 (en) * 2003-09-03 2009-12-03 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7292313B2 (en) 2003-09-03 2007-11-06 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7551361B2 (en) 2003-09-09 2009-06-23 Carl Zeiss Smt Ag Lithography lens system and projection exposure system provided with at least one lithography lens system of this type
US20070258134A1 (en) * 2003-09-09 2007-11-08 Hans-Juergen Rostalski Lithography Lens System And Projection Exposure System Provided With At Least One Lithography Lens System Of This Type
US20060231206A1 (en) * 2003-09-19 2006-10-19 Nikon Corporation Exposure apparatus and device manufacturing method
US7924402B2 (en) 2003-09-19 2011-04-12 Nikon Corporation Exposure apparatus and device manufacturing method
US10025194B2 (en) 2003-09-29 2018-07-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8749759B2 (en) 2003-09-29 2014-06-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080042068A1 (en) * 2003-09-29 2008-02-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8305552B2 (en) 2003-09-29 2012-11-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060181690A1 (en) * 2003-09-29 2006-08-17 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9513558B2 (en) 2003-09-29 2016-12-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8139198B2 (en) 2003-09-29 2012-03-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8039807B2 (en) 2003-09-29 2011-10-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
WO2005034174A3 (en) * 2003-10-03 2005-06-09 Allen Caroll Method and device for immersion lithography
US20050073670A1 (en) * 2003-10-03 2005-04-07 Micronic Laser Systems Ab Method and device for immersion lithography
WO2005034174A2 (en) * 2003-10-03 2005-04-14 Micronic Laser Systems Ab Method and device for immersion lithography
KR100752003B1 (en) 2003-10-03 2007-08-28 마이크로닉 레이저 시스템즈 에이비 Method and device for immersion lithography
US20060250602A1 (en) * 2003-10-08 2006-11-09 Zao Nikon Co., Ltd. Substrate carrying apparatus, exposure apparatus, and device manufacturing method
US20070110916A1 (en) * 2003-10-08 2007-05-17 Zao Nikon Co., Ltd. Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US8755025B2 (en) 2003-10-08 2014-06-17 Nikon Corporation Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US8345216B2 (en) 2003-10-08 2013-01-01 Nikon Corporation Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US9110381B2 (en) 2003-10-08 2015-08-18 Nikon Corporation Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US7898645B2 (en) 2003-10-08 2011-03-01 Zao Nikon Co., Ltd. Substrate transport apparatus and method, exposure apparatus and exposure method, and device fabricating method
US8107055B2 (en) 2003-10-08 2012-01-31 Zao Nikon Co., Ltd. Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US7515249B2 (en) 2003-10-08 2009-04-07 Zao Nikon Co., Ltd. Substrate carrying apparatus, exposure apparatus, and device manufacturing method
US9097986B2 (en) 2003-10-08 2015-08-04 Nikon Corporation Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US7995186B2 (en) 2003-10-08 2011-08-09 Zao Nikon Co., Ltd. Substrate conveyance device and substrate conveyance method, exposure apparatus and exposure method, device manufacturing method
US20060187432A1 (en) * 2003-10-09 2006-08-24 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8130361B2 (en) 2003-10-09 2012-03-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9383656B2 (en) 2003-10-09 2016-07-05 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US9063438B2 (en) 2003-10-09 2015-06-23 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7969663B2 (en) 2003-10-22 2011-06-28 Carl Zeiss Smt Gmbh Projection objective for immersion lithography
US20080043345A1 (en) * 2003-10-22 2008-02-21 Aurelian Dodoc Refractive Projection Objective for Immersion Lithography
US7751129B2 (en) 2003-10-22 2010-07-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
WO2005050321A1 (en) * 2003-10-22 2005-06-02 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US8102502B2 (en) 2003-10-28 2012-01-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080278696A1 (en) * 2003-10-28 2008-11-13 Asml Netherlands B.V. Lithographic apparatus
US8638418B2 (en) 2003-10-28 2014-01-28 Asml Netherlands B.V. Lithographic apparatus
US9482962B2 (en) 2003-10-28 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860922B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8860923B2 (en) 2003-10-28 2014-10-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7532304B2 (en) 2003-10-28 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9182679B2 (en) 2003-10-28 2015-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050128445A1 (en) * 2003-10-28 2005-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110157570A1 (en) * 2003-10-28 2011-06-30 Asml Netherlands B.V. Lithographic apparatus
US8542344B2 (en) 2003-10-28 2013-09-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8542343B2 (en) 2003-10-28 2013-09-24 Asml Netherlands B.V. Lithographic apparatus
US7868998B2 (en) 2003-10-28 2011-01-11 Asml Netherlands B.V. Lithographic apparatus
US8810771B2 (en) 2003-10-28 2014-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US20050263068A1 (en) * 2003-10-28 2005-12-01 Asml Netherlands B.V. Lithographic apparatus
US9134622B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9134623B2 (en) 2003-11-14 2015-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9952515B2 (en) 2003-11-14 2018-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090207397A1 (en) * 2003-11-14 2009-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8634056B2 (en) 2003-11-14 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8547519B2 (en) 2003-11-14 2013-10-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050175776A1 (en) * 2003-11-14 2005-08-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7492509B2 (en) 2003-12-02 2009-02-17 Carl Zeiss Smt Ag Projection optical system
US20070258152A1 (en) * 2003-12-02 2007-11-08 Carl Zeiss Smt Ag Projection Optical System
US9182685B2 (en) 2003-12-03 2015-11-10 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US20070115450A1 (en) * 2003-12-03 2007-05-24 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US20070242242A1 (en) * 2003-12-03 2007-10-18 Nikon Corporation Exposure Apparatus, Exposure Method, Method for Producing Device, and Optical Part
US9019469B2 (en) 2003-12-03 2015-04-28 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US8054447B2 (en) 2003-12-03 2011-11-08 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US10088760B2 (en) 2003-12-03 2018-10-02 Nikon Corporation Exposure apparatus, exposure method, method for producing device, and optical part
US9798245B2 (en) 2003-12-15 2017-10-24 Nikon Corporation Exposure apparatus, and exposure method, with recovery device to recover liquid leaked from between substrate and member
US20110019170A1 (en) * 2003-12-15 2011-01-27 Nikon Corporation Projection exposure apparatus and stage unit, and exposure method
US20070064212A1 (en) * 2003-12-15 2007-03-22 Nikon Corporation Projection exposure apparatus and stage unit, and exposure method
US7982857B2 (en) 2003-12-15 2011-07-19 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method with recovery device having lyophilic portion
US20070109521A1 (en) * 2003-12-15 2007-05-17 Nikon Corporation Stage apparatus, exposure apparatus, and exposure method
US20080291419A1 (en) * 2003-12-19 2008-11-27 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7710541B2 (en) 2003-12-23 2010-05-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080186459A1 (en) * 2003-12-23 2008-08-07 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US9817321B2 (en) 2003-12-23 2017-11-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8767171B2 (en) 2003-12-23 2014-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9465301B2 (en) 2003-12-23 2016-10-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100182576A1 (en) * 2003-12-23 2010-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9684250B2 (en) 2003-12-23 2017-06-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US8339701B2 (en) 2004-01-14 2012-12-25 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8289619B2 (en) 2004-01-14 2012-10-16 Carl Zeiss Smt Gmbh Catadioptric projection objective
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US8355201B2 (en) 2004-01-14 2013-01-15 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20100014153A1 (en) * 2004-01-14 2010-01-21 Carl Zeiss Smt Ag Catadioptric projection objective
US8730572B2 (en) 2004-01-14 2014-05-20 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7869122B2 (en) 2004-01-14 2011-01-11 Carl Zeiss Smt Ag Catadioptric projection objective
US20110235167A1 (en) * 2004-01-14 2011-09-29 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8208199B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8199400B2 (en) 2004-01-14 2012-06-12 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080212170A1 (en) * 2004-01-14 2008-09-04 Carl Zeiss Smt Ag Catadioptric projection objective
US8416490B2 (en) 2004-01-14 2013-04-09 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8804234B2 (en) 2004-01-14 2014-08-12 Carl Zeiss Smt Gmbh Catadioptric projection objective including an aspherized plate
US20090190208A1 (en) * 2004-01-14 2009-07-30 Carl Zeiss Smt Ag Catadioptric projection objective
US8330935B2 (en) 2004-01-20 2012-12-11 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US20080309894A1 (en) * 2004-01-20 2008-12-18 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and measuring device for a projection lens
US20100141912A1 (en) * 2004-01-20 2010-06-10 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US20070070316A1 (en) * 2004-01-20 2007-03-29 Albrecht Ehrmann Microlithographic projection exposure apparatus and measuring device for a projection lens
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US20110051104A1 (en) * 2004-02-02 2011-03-03 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8553203B2 (en) 2004-02-02 2013-10-08 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20070127006A1 (en) * 2004-02-02 2007-06-07 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8547528B2 (en) 2004-02-02 2013-10-01 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20110058149A1 (en) * 2004-02-02 2011-03-10 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8045136B2 (en) 2004-02-02 2011-10-25 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20070211235A1 (en) * 2004-02-02 2007-09-13 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8736808B2 (en) 2004-02-02 2014-05-27 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US10007196B2 (en) 2004-02-02 2018-06-26 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US20110025998A1 (en) * 2004-02-02 2011-02-03 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8724079B2 (en) 2004-02-02 2014-05-13 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20090296067A1 (en) * 2004-02-02 2009-12-03 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US20070247607A1 (en) * 2004-02-02 2007-10-25 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8711328B2 (en) 2004-02-02 2014-04-29 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US9684248B2 (en) 2004-02-02 2017-06-20 Nikon Corporation Lithographic apparatus having substrate table and sensor table to measure a patterned beam
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8705002B2 (en) 2004-02-02 2014-04-22 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US9665016B2 (en) 2004-02-02 2017-05-30 Nikon Corporation Lithographic apparatus and method having substrate table and sensor table to hold immersion liquid
US9632431B2 (en) 2004-02-02 2017-04-25 Nikon Corporation Lithographic apparatus and method having substrate and sensor tables
US20110051105A1 (en) * 2004-02-02 2011-03-03 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7990517B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with residual liquid detector
US9041906B2 (en) 2004-02-03 2015-05-26 Nikon Corporation Immersion exposure apparatus and method that detects liquid adhered to rear surface of substrate
US8488101B2 (en) 2004-02-03 2013-07-16 Nikon Corporation Immersion exposure apparatus and method that detects residual liquid on substrate held by substrate table on way from exposure position to unload position
US20070109517A1 (en) * 2004-02-03 2007-05-17 Nikon Corporation Exposure apparatus and device manufacturing method
US7990516B2 (en) 2004-02-03 2011-08-02 Nikon Corporation Immersion exposure apparatus and device manufacturing method with liquid detection apparatus
US8767168B2 (en) 2004-02-03 2014-07-01 Nikon Corporation Immersion exposure apparatus and method that detects residual liquid on substrate held by substrate table after exposure
US20050175940A1 (en) * 2004-02-11 2005-08-11 Asml Netherlands B.V. Device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
WO2005081067A1 (en) 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US20110228246A1 (en) * 2004-02-13 2011-09-22 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US9046790B2 (en) 2004-03-25 2015-06-02 Nikon Corporation Exposure apparatus and device fabrication method
US9411248B2 (en) 2004-03-25 2016-08-09 Nikon Corporation Exposure apparatus and device fabrication method
US8411248B2 (en) 2004-03-25 2013-04-02 Nikon Corporation Exposure apparatus and device fabrication method
US8169590B2 (en) 2004-03-25 2012-05-01 Nikon Corporation Exposure apparatus and device fabrication method
US8111373B2 (en) 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
US20070081136A1 (en) * 2004-03-25 2007-04-12 Nikon Corporation Exposure apparatus and device fabrication method
US20090180090A1 (en) * 2004-03-25 2009-07-16 Nikon Corporation Exposure apparatus and device fabrication method
US20050225734A1 (en) * 2004-04-08 2005-10-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110116061A1 (en) * 2004-04-14 2011-05-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9829799B2 (en) 2004-04-14 2017-11-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9989861B2 (en) 2004-04-14 2018-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8704998B2 (en) 2004-04-14 2014-04-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a barrier to collect liquid
US8755033B2 (en) 2004-04-14 2014-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a barrier to collect liquid
US9207543B2 (en) 2004-04-14 2015-12-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a groove to collect liquid
US20050231694A1 (en) * 2004-04-14 2005-10-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9285683B2 (en) 2004-05-04 2016-03-15 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20070222967A1 (en) * 2004-05-04 2007-09-27 Nikon Corporation Apparatus and Method for Providing Fluid for Immersion Lithography
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9019596B2 (en) 2004-05-17 2015-04-28 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9134618B2 (en) 2004-05-17 2015-09-15 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050259232A1 (en) * 2004-05-18 2005-11-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8638415B2 (en) 2004-05-18 2014-01-28 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US20100014061A1 (en) * 2004-05-18 2010-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9623436B2 (en) 2004-05-18 2017-04-18 Asml Netherlands B.V. Active drying station and method to remove immersion liquid using gas flow supply with gas outlet between two gas inlets
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US20080239260A1 (en) * 2004-06-09 2008-10-02 Nikon Corporation Exposure apparatus and device manufacturing method
US8520184B2 (en) 2004-06-09 2013-08-27 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device
US20070291239A1 (en) * 2004-06-09 2007-12-20 Kenichi Shiraishi Exposure Apparatus and Device Manufacturing Method
US8525971B2 (en) 2004-06-09 2013-09-03 Nikon Corporation Lithographic apparatus with cleaning of substrate table
US8704997B2 (en) 2004-06-09 2014-04-22 Nikon Corporation Immersion lithographic apparatus and method for rinsing immersion space before exposure
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
EP3067750A3 (en) * 2004-06-10 2017-03-15 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20060007419A1 (en) * 2004-07-07 2006-01-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8319939B2 (en) 2004-07-07 2012-11-27 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method detecting residual liquid
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US20070182945A1 (en) * 2004-07-12 2007-08-09 Makoto Shibuta Exposure apparatus and device manufacturing method
US8384874B2 (en) 2004-07-12 2013-02-26 Nikon Corporation Immersion exposure apparatus and device manufacturing method to detect if liquid on base member
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US20070263182A1 (en) * 2004-08-18 2007-11-15 Nikon Corporation Exposure Apparatus and Device Manufacturing Method
US8305553B2 (en) 2004-08-18 2012-11-06 Nikon Corporation Exposure apparatus and device manufacturing method
US20100149514A1 (en) * 2004-08-19 2010-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8446563B2 (en) 2004-08-19 2013-05-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8755028B2 (en) 2004-08-19 2014-06-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9746788B2 (en) 2004-08-19 2017-08-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9488923B2 (en) 2004-08-19 2016-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8031325B2 (en) 2004-08-19 2011-10-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090303455A1 (en) * 2004-08-19 2009-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9097992B2 (en) 2004-08-19 2015-08-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7602470B2 (en) 2004-08-19 2009-10-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9507278B2 (en) 2004-08-19 2016-11-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9904185B2 (en) 2004-08-19 2018-02-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8045137B2 (en) 2004-12-07 2011-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060119809A1 (en) * 2004-12-07 2006-06-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080291407A1 (en) * 2004-12-07 2008-11-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
US8638419B2 (en) 2004-12-20 2014-01-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941811B2 (en) 2004-12-20 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060132731A1 (en) * 2004-12-20 2006-06-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9703210B2 (en) 2004-12-20 2017-07-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8115899B2 (en) 2004-12-20 2012-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7957069B2 (en) 2004-12-30 2011-06-07 Carl Zeiss Smt Gmbh Projection optical system
US20070268594A1 (en) * 2004-12-30 2007-11-22 Carl Zeiss Smt Ag Projection Optical System
US7924403B2 (en) 2005-01-14 2011-04-12 Asml Netherlands B.V. Lithographic apparatus and device and device manufacturing method
US20060158628A1 (en) * 2005-01-14 2006-07-20 Asml Netherlands B.V. Lithographic apparatus and device and device manufacturing method
US8675173B2 (en) 2005-01-14 2014-03-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9746781B2 (en) 2005-01-31 2017-08-29 Nikon Corporation Exposure apparatus and method for producing device
US20070252964A1 (en) * 2005-01-31 2007-11-01 Nikon Corporation Exposure apparatus and method for producing device
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US20080007844A1 (en) * 2005-02-28 2008-01-10 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7453078B2 (en) 2005-02-28 2008-11-18 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US8629418B2 (en) 2005-02-28 2014-01-14 Asml Netherlands B.V. Lithographic apparatus and sensor therefor
USRE45576E1 (en) 2005-04-08 2015-06-23 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
USRE46933E1 (en) 2005-04-08 2018-07-03 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
USRE44446E1 (en) 2005-04-08 2013-08-20 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20070066452A1 (en) * 2005-09-22 2007-03-22 William Marshall Recliner exerciser
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
US20070128482A1 (en) * 2005-12-06 2007-06-07 Lg Electronics Inc. Power supply apparatus and method for line connection type fuel cell system
WO2007071569A1 (en) * 2005-12-23 2007-06-28 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US9851644B2 (en) 2005-12-30 2017-12-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110222036A1 (en) * 2005-12-30 2011-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20110222035A1 (en) * 2005-12-30 2011-09-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8363206B2 (en) 2006-05-09 2013-01-29 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US20090135385A1 (en) * 2006-05-09 2009-05-28 Carl Zeiss Smt Ag Optical imaging device with thermal attenuation
US9810996B2 (en) 2006-05-09 2017-11-07 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US20080198343A1 (en) * 2007-02-15 2008-08-21 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8743343B2 (en) 2007-03-15 2014-06-03 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US9217933B2 (en) 2007-03-15 2015-12-22 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US20080225246A1 (en) * 2007-03-15 2008-09-18 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8400610B2 (en) 2007-03-15 2013-03-19 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US20090040389A1 (en) * 2007-08-09 2009-02-12 Mstar Semiconductor, Inc Gamma correction apparatus
US7626685B2 (en) 2008-03-26 2009-12-01 Samsung Electronics Co., Ltd. Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
US20090244514A1 (en) * 2008-03-26 2009-10-01 Samsung Electronics Co., Ltd. Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
US20090296065A1 (en) * 2008-05-28 2009-12-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
US20110162100A1 (en) * 2009-12-28 2011-06-30 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
CN103278912A (en) * 2013-06-19 2013-09-04 中国科学院光电技术研究所 Reflective type ultra-violet lithography objective lens

Also Published As

Publication number Publication date Type
US20050024617A1 (en) 2005-02-03 application
KR100866818B1 (en) 2008-11-04 grant
US6844919B2 (en) 2005-01-18 grant
US20040021844A1 (en) 2004-02-05 application
KR20020046155A (en) 2002-06-20 application
US6633365B2 (en) 2003-10-14 grant

Similar Documents

Publication Publication Date Title
US6337162B1 (en) Method of exposure, photomask, method of production of photomask, microdevice, and method of production of microdevice
US6750948B2 (en) Projection optical system, projection exposure apparatus having the projection optical system, projection method thereof, exposure method thereof and fabricating method for fabricating a device using the projection exposure apparatus
USRE38438E1 (en) Catadioptric reduction projection optical system and exposure apparatus having the same
US6811953B2 (en) Exposure apparatus, method for manufacturing therof, method for exposing and method for manufacturing microdevice
US6741394B1 (en) Optical integrator, illumination optical apparatus, exposure apparatus and observation apparatus
US6813098B2 (en) Variable numerical aperture large-field unit-magnification projection system
US6707616B1 (en) Projection exposure apparatus, projection exposure method and catadioptric optical system
US6556353B2 (en) Projection optical system, projection exposure apparatus, and projection exposure method
US6195213B1 (en) Projection exposure apparatus and method
US6639734B2 (en) Catadioptric imaging system and a projection exposure apparatus provided with said imaging system
US20030011893A1 (en) Optical system and exposure apparatus equipped with the optical system
US5617211A (en) Exposure apparatus
US20030147131A1 (en) Reflection type projection optical system, exposure apparatus and device fabrication method using the same
US20070037079A1 (en) Projection optical system, exposure apparatus, and exposure method
US20030011755A1 (en) Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
US6235438B1 (en) Projection exposure method and apparatus
US6522484B1 (en) Projection objective
US20020005938A1 (en) Projection optical system, exposure apparatus incorporating this projection optical system, and manufacturing method for micro devices using the exposure apparatus
US6831731B2 (en) Projection optical system and an exposure apparatus with the projection optical system
EP1630585A1 (en) Projection optical system, and exposure apparatus and exposure method
US20060028715A1 (en) Catadioptric projection optical system, exposure apparatus having the same, device fabrication method
US20040004771A1 (en) Projection optical system, exposure system provided with the projection optical system, and exposure method using the projection optical system
US7362508B2 (en) Projection optical system and method for photolithography and exposure apparatus and method using same
US20060176461A1 (en) Projection optical system and exposure apparatus having the same
US6259508B1 (en) Projection optical system and exposure apparatus and method

Legal Events

Date Code Title Description
AS Assignment

Owner name: NIKON CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SUENAGA, YUTAKA;REEL/FRAME:012366/0167

Effective date: 20011205

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12