TWI517336B - 顯示裝置 - Google Patents
顯示裝置 Download PDFInfo
- Publication number
- TWI517336B TWI517336B TW098132322A TW98132322A TWI517336B TW I517336 B TWI517336 B TW I517336B TW 098132322 A TW098132322 A TW 098132322A TW 98132322 A TW98132322 A TW 98132322A TW I517336 B TWI517336 B TW I517336B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- thin film
- layer
- film transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Shift Register Type Memory (AREA)
- Vehicle Body Suspensions (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008259031 | 2008-10-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201027702A TW201027702A (en) | 2010-07-16 |
| TWI517336B true TWI517336B (zh) | 2016-01-11 |
Family
ID=41510919
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098132322A TWI517336B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW110114194A TWI790599B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW106103707A TWI632658B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW104135830A TWI582935B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW108140589A TWI726479B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW107118779A TWI677953B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110114194A TWI790599B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW106103707A TWI632658B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW104135830A TWI582935B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW108140589A TWI726479B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
| TW107118779A TWI677953B (zh) | 2008-10-03 | 2009-09-24 | 顯示裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US9324874B2 (enExample) |
| EP (1) | EP2172977A1 (enExample) |
| JP (10) | JP5601811B2 (enExample) |
| KR (6) | KR101785688B1 (enExample) |
| CN (2) | CN101714547B (enExample) |
| TW (6) | TWI517336B (enExample) |
Families Citing this family (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1793266B1 (en) | 2005-12-05 | 2017-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration |
| KR101659925B1 (ko) | 2008-10-03 | 2016-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| EP2172977A1 (en) * | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| CN103928476A (zh) | 2008-10-03 | 2014-07-16 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| CN101719493B (zh) | 2008-10-08 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置 |
| JP5361651B2 (ja) | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN102509736B (zh) | 2008-10-24 | 2015-08-19 | 株式会社半导体能源研究所 | 半导体器件和用于制造该半导体器件的方法 |
| US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8741702B2 (en) | 2008-10-24 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101667909B1 (ko) | 2008-10-24 | 2016-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| EP2180518B1 (en) | 2008-10-24 | 2018-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Method for manufacturing semiconductor device |
| JP5616012B2 (ja) * | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101631454B1 (ko) * | 2008-10-31 | 2016-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리회로 |
| KR101432764B1 (ko) * | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
| KR101671544B1 (ko) | 2008-11-21 | 2016-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 기기 |
| WO2011004723A1 (en) * | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method the same |
| KR101782176B1 (ko) | 2009-07-18 | 2017-09-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| KR101988341B1 (ko) | 2009-09-04 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
| EP3217435A1 (en) * | 2009-09-16 | 2017-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| KR101730347B1 (ko) | 2009-09-16 | 2017-04-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
| KR102054650B1 (ko) | 2009-09-24 | 2019-12-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| KR101877149B1 (ko) | 2009-10-08 | 2018-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층, 반도체 장치 및 그 제조 방법 |
| KR101763959B1 (ko) | 2009-10-08 | 2017-08-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치, 및 전자 기기 |
| CN102576737B (zh) | 2009-10-09 | 2015-10-21 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| KR101669476B1 (ko) | 2009-10-30 | 2016-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 논리 회로 및 반도체 장치 |
| KR20190066086A (ko) | 2009-11-06 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR102317763B1 (ko) | 2009-11-06 | 2021-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
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