JP5601811B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5601811B2 JP5601811B2 JP2009229211A JP2009229211A JP5601811B2 JP 5601811 B2 JP5601811 B2 JP 5601811B2 JP 2009229211 A JP2009229211 A JP 2009229211A JP 2009229211 A JP2009229211 A JP 2009229211A JP 5601811 B2 JP5601811 B2 JP 5601811B2
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- thin film
- oxide semiconductor
- film transistor
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- 239000013077 target material Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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Description
ここでは、2つのnチャネル型の薄膜トランジスタを用いてインバータ回路を構成する例を基に本発明の一形態を以下に説明する。
実施の形態1は、EDMOS回路の例を示したが、本実施の形態では、EEMOS回路の等価回路を図2(A)に示す。図2(A)の等価回路においては、どちらもエンハンスメント型のnチャネル型トランジスタとする組み合わせを用いた駆動回路である。
本実施の形態では、インバータ回路の作製において、実施の形態2とは異なる作製工程の例を図4(A)、図4(B)、図4(C)、及び図4(D)を用いて説明する。
本実施の形態では、本発明の一形態の薄膜トランジスタを含む表示装置の作製工程について、図5乃至図12を用いて説明する。
ここでは、実施の形態1において、配線と半導体層とが接する構成の薄膜トランジスタを有する表示装置の例を図30に示す。
本実施の形態では、本発明の半導体装置の一例である表示装置において、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
本発明の一形態の薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、本発明の一形態の薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本発明の一形態の半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本発明の一形態の半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図25、図26に示す。
本発明の一形態の半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
Claims (4)
- 端子部と、
インバータを有する駆動回路と、有し、
前記インバータは、第1のトランジスタ及び第2のトランジスタを有し、
前記第1のトランジスタは、第1のゲート電極、第1の酸化物半導体層、及び第1のチャネル保護層を有し、
前記第2のトランジスタは、第2のゲート電極、第2の酸化物半導体層、及び第2のチャネル保護層を有し、
前記第1のゲート電極上及び前記第2のゲート電極上の第1の絶縁層と、
前記第1の絶縁層上において、前記第1のゲート電極と重なる領域を有する前記第1の酸化物半導体層と、
前記第1の絶縁層上において、前記第2のゲート電極と重なる領域を有する前記第2の酸化物半導体層と、
前記第1の酸化物半導体層上の前記第1のチャネル保護層と、
前記第2の酸化物半導体層上の前記第2のチャネル保護層と、
前記第1のチャネル保護層上及び前記第1の酸化物半導体層上の第1の配線と、
前記第2のチャネル保護層上及び前記第2の酸化物半導体層上の第2の配線と、
前記第1のチャネル保護層上、前記第1の酸化物半導体層上、前記第2のチャネル保護層上、及び前記第2の酸化物半導体層上の第3の配線と、を有し、
前記第1の配線は、前記第1のトランジスタの第1のソース電極及び第1のドレイン電極の一方として機能する部分を有し、
前記第2の配線は、前記第2のトランジスタの第2のソース電極及び第2のドレイン電極の一方として機能する部分を有し、
前記第3の配線は、前記第1のトランジスタの前記第1のソース電極及び前記第1のドレイン電極の他方として機能する部分と、前記第2のトランジスタの前記第2のソース電極及び前記第2のドレイン電極の他方として機能する部分とを有し、
前記第3の配線は、前記第1の絶縁層に設けられたコンタクトホールを介して、前記第2のゲート電極と直接接続し、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層は、インジウム、ガリウム、及び亜鉛を含み、
前記端子部は、第1の導電膜と、前記第1の導電膜上の前記第1の絶縁層と、前記第1の絶縁層上の第2の導電膜と、前記第2の導電膜上の第2の絶縁層と、前記第2の絶縁層上の第3の導電膜とを有し、
前記第2の導電膜は、前記第1の絶縁層に設けられたコンタクトホールを介して、前記第1の導電膜と電気的に接続され、
前記第1の導電膜と、前記第1のゲート電極と、前記第2のゲート電極とは、同一の導電膜を加工する工程を経て形成されたものであり、
前記第2の導電膜と、前記第1の配線と、前記第2の配線と、前記第3の配線とは、同一の導電膜を加工する工程を経て形成されたものであることを特徴とする半導体装置。 - 請求項1において、
前記第1のトランジスタ及び前記第2のトランジスタは、nチャネル型トランジスタであることを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層は、遷移金属を含むことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記駆動回路により駆動される画素部を有し、
前記画素部は第3のトランジスタと、前記第3のトランジスタと電気的に接続される画素電極とを有し、
前記第3のトランジスタは、第3のゲート電極、第3の酸化物半導体層、及び第3のチャネル保護層を有し、
前記第3のゲート電極上の前記第1の絶縁層と、
前記第1の絶縁層上の前記第3の酸化物半導体層と、
前記第3の酸化物半導体層上の前記第3のチャネル保護層と、
前記第3のチャネル保護層上及び前記第3の酸化物半導体層上の第4の導電膜と、
前記第3のチャネル保護層上及び前記第3の酸化物半導体層上の第5の導電膜と、を有し、
前記第4の導電膜は、前記第3のトランジスタの第3のソース電極及び第3のドレイン電極の一方として機能する部分を有し、
前記第5の導電膜は、前記第3のトランジスタの第3のソース電極及び第3のドレイン電極の他方として機能する部分を有し、
前記第3の酸化物半導体層は、インジウム、ガリウム、及び亜鉛を含み、
前記第3のゲート電極と、前記第1のゲート電極とは、同一の導電膜を加工する工程を経て形成されたものであり、
前記第4の導電膜と、前記第5の導電膜と、前記第1の配線とは、同一の導電膜を加工する工程を経て形成されたものであることを特徴とする半導体装置。
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CN101714546B (zh) | 2008-10-03 | 2014-05-14 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
KR20160113329A (ko) | 2008-10-03 | 2016-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101310473B1 (ko) | 2008-10-24 | 2013-09-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101432764B1 (ko) | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
KR102556313B1 (ko) | 2008-11-21 | 2023-07-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
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