KR102750432B1 - 통합 장치 패키지 - Google Patents
통합 장치 패키지 Download PDFInfo
- Publication number
- KR102750432B1 KR102750432B1 KR1020237003430A KR20237003430A KR102750432B1 KR 102750432 B1 KR102750432 B1 KR 102750432B1 KR 1020237003430 A KR1020237003430 A KR 1020237003430A KR 20237003430 A KR20237003430 A KR 20237003430A KR 102750432 B1 KR102750432 B1 KR 102750432B1
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- South Korea
- Prior art keywords
- electronic component
- die
- carrier
- article
- integrated device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H01L23/562—
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- H01L23/3121—
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- H01L23/544—
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- H01L24/07—
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- H01L24/80—
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- H01L25/0655—
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- H01L25/0657—
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- H01L25/18—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0249—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias wherein the through-semiconductor via protrudes from backsides of the chips, wafers or substrates during the manufacture
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/121—Arrangements for protection of devices protecting against mechanical damage
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/014—Manufacture or treatment using batch processing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/019—Manufacture or treatment using temporary auxiliary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/10—Configurations of laterally-adjacent chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W99/00—Subject matter not provided for in other groups of this subclass
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- H01L2223/54453—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/251—Organics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
- H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/934—Cross-sectional shape, i.e. in side view
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/102—Controlling the environment during the bonding, e.g. the temperature or pressure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/211—Direct bonding of chips, wafers or substrates using auxiliary members, e.g. aids for protecting the bonding area
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/301—Bonding techniques, e.g. hybrid bonding
- H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/301—Bonding techniques, e.g. hybrid bonding
- H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W80/00—Direct bonding of chips, wafers or substrates
- H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
- H10W80/732—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having shape changed during the connecting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
- H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Micromachines (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247043566A KR20250010110A (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/917,686 | 2020-06-30 | ||
| US16/917,686 US11631647B2 (en) | 2020-06-30 | 2020-06-30 | Integrated device packages with integrated device die and dummy element |
| PCT/US2021/038696 WO2022005846A1 (en) | 2020-06-30 | 2021-06-23 | Integrated device packages |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247043566A Division KR20250010110A (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20230029960A KR20230029960A (ko) | 2023-03-03 |
| KR102750432B1 true KR102750432B1 (ko) | 2025-01-03 |
Family
ID=79031452
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237003430A Active KR102750432B1 (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
| KR1020257043329A Pending KR20260007309A (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
| KR1020247043566A Pending KR20250010110A (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257043329A Pending KR20260007309A (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
| KR1020247043566A Pending KR20250010110A (ko) | 2020-06-30 | 2021-06-23 | 통합 장치 패키지 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US11631647B2 (https=) |
| EP (3) | EP4701401A3 (https=) |
| JP (2) | JP7441979B2 (https=) |
| KR (3) | KR102750432B1 (https=) |
| CN (4) | CN121816104A (https=) |
| WO (1) | WO2022005846A1 (https=) |
Families Citing this family (111)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
| US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
| US8735219B2 (en) | 2012-08-30 | 2014-05-27 | Ziptronix, Inc. | Heterogeneous annealing method and device |
| US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US9953941B2 (en) | 2015-08-25 | 2018-04-24 | Invensas Bonding Technologies, Inc. | Conductive barrier direct hybrid bonding |
| US10204893B2 (en) | 2016-05-19 | 2019-02-12 | Invensas Bonding Technologies, Inc. | Stacked dies and methods for forming bonded structures |
| US10607136B2 (en) | 2017-08-03 | 2020-03-31 | Xcelsis Corporation | Time borrowing between layers of a three dimensional chip stack |
| US10580735B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Stacked IC structure with system level wiring on multiple sides of the IC die |
| US10672663B2 (en) | 2016-10-07 | 2020-06-02 | Xcelsis Corporation | 3D chip sharing power circuit |
| TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
| US10002844B1 (en) | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US20180182665A1 (en) | 2016-12-28 | 2018-06-28 | Invensas Bonding Technologies, Inc. | Processed Substrate |
| WO2018125673A2 (en) | 2016-12-28 | 2018-07-05 | Invensas Bonding Technologies, Inc | Processing stacked substrates |
| TWI837879B (zh) | 2016-12-29 | 2024-04-01 | 美商艾德亞半導體接合科技有限公司 | 具有整合式被動構件的接合結構 |
| US10629577B2 (en) | 2017-03-16 | 2020-04-21 | Invensas Corporation | Direct-bonded LED arrays and applications |
| US10515913B2 (en) | 2017-03-17 | 2019-12-24 | Invensas Bonding Technologies, Inc. | Multi-metal contact structure |
| US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| US10269756B2 (en) | 2017-04-21 | 2019-04-23 | Invensas Bonding Technologies, Inc. | Die processing |
| US10879212B2 (en) | 2017-05-11 | 2020-12-29 | Invensas Bonding Technologies, Inc. | Processed stacked dies |
| US10446441B2 (en) | 2017-06-05 | 2019-10-15 | Invensas Corporation | Flat metal features for microelectronics applications |
| US10217720B2 (en) | 2017-06-15 | 2019-02-26 | Invensas Corporation | Multi-chip modules formed using wafer-level processing of a reconstitute wafer |
| US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
| US11031285B2 (en) | 2017-10-06 | 2021-06-08 | Invensas Bonding Technologies, Inc. | Diffusion barrier collar for interconnects |
| US11385108B2 (en) * | 2017-11-02 | 2022-07-12 | Nextinput, Inc. | Sealed force sensor with etch stop layer |
| US11011503B2 (en) | 2017-12-15 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Direct-bonded optoelectronic interconnect for high-density integrated photonics |
| US10923408B2 (en) | 2017-12-22 | 2021-02-16 | Invensas Bonding Technologies, Inc. | Cavity packages |
| US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US10727219B2 (en) | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
| US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
| US11256004B2 (en) | 2018-03-20 | 2022-02-22 | Invensas Bonding Technologies, Inc. | Direct-bonded lamination for improved image clarity in optical devices |
| US10991804B2 (en) | 2018-03-29 | 2021-04-27 | Xcelsis Corporation | Transistor level interconnection methodologies utilizing 3D interconnects |
| US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
| US10790262B2 (en) | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
| US11244916B2 (en) | 2018-04-11 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
| US10964664B2 (en) | 2018-04-20 | 2021-03-30 | Invensas Bonding Technologies, Inc. | DBI to Si bonding for simplified handle wafer |
| US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11276676B2 (en) | 2018-05-15 | 2022-03-15 | Invensas Bonding Technologies, Inc. | Stacked devices and methods of fabrication |
| US10923413B2 (en) | 2018-05-30 | 2021-02-16 | Xcelsis Corporation | Hard IP blocks with physically bidirectional passageways |
| WO2019241417A1 (en) | 2018-06-13 | 2019-12-19 | Invensas Bonding Technologies, Inc. | Tsv as pad |
| US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
| US10910344B2 (en) | 2018-06-22 | 2021-02-02 | Xcelsis Corporation | Systems and methods for releveled bump planes for chiplets |
| US11664357B2 (en) | 2018-07-03 | 2023-05-30 | Adeia Semiconductor Bonding Technologies Inc. | Techniques for joining dissimilar materials in microelectronics |
| WO2020010265A1 (en) | 2018-07-06 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Microelectronic assemblies |
| WO2020010136A1 (en) | 2018-07-06 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Molded direct bonded and interconnected stack |
| US12406959B2 (en) | 2018-07-26 | 2025-09-02 | Adeia Semiconductor Bonding Technologies Inc. | Post CMP processing for hybrid bonding |
| US11515291B2 (en) | 2018-08-28 | 2022-11-29 | Adeia Semiconductor Inc. | Integrated voltage regulator and passive components |
| US11296044B2 (en) | 2018-08-29 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes |
| US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
| US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
| US11244920B2 (en) | 2018-12-18 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Method and structures for low temperature device bonding |
| KR20210104742A (ko) | 2019-01-14 | 2021-08-25 | 인벤사스 본딩 테크놀로지스 인코포레이티드 | 접합 구조체 |
| US11387202B2 (en) | 2019-03-01 | 2022-07-12 | Invensas Llc | Nanowire bonding interconnect for fine-pitch microelectronics |
| US11901281B2 (en) | 2019-03-11 | 2024-02-13 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures with integrated passive component |
| US10854578B2 (en) | 2019-03-29 | 2020-12-01 | Invensas Corporation | Diffused bitline replacement in stacked wafer memory |
| US11610846B2 (en) | 2019-04-12 | 2023-03-21 | Adeia Semiconductor Bonding Technologies Inc. | Protective elements for bonded structures including an obstructive element |
| US11373963B2 (en) | 2019-04-12 | 2022-06-28 | Invensas Bonding Technologies, Inc. | Protective elements for bonded structures |
| US11205625B2 (en) | 2019-04-12 | 2021-12-21 | Invensas Bonding Technologies, Inc. | Wafer-level bonding of obstructive elements |
| US11355404B2 (en) | 2019-04-22 | 2022-06-07 | Invensas Bonding Technologies, Inc. | Mitigating surface damage of probe pads in preparation for direct bonding of a substrate |
| US11385278B2 (en) | 2019-05-23 | 2022-07-12 | Invensas Bonding Technologies, Inc. | Security circuitry for bonded structures |
| US12374641B2 (en) | 2019-06-12 | 2025-07-29 | Adeia Semiconductor Bonding Technologies Inc. | Sealed bonded structures and methods for forming the same |
| US11296053B2 (en) | 2019-06-26 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Direct bonded stack structures for increased reliability and improved yield in microelectronics |
| US12080672B2 (en) | 2019-09-26 | 2024-09-03 | Adeia Semiconductor Bonding Technologies Inc. | Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive |
| US12113054B2 (en) | 2019-10-21 | 2024-10-08 | Adeia Semiconductor Technologies Llc | Non-volatile dynamic random access memory |
| TWI874441B (zh) * | 2019-10-29 | 2025-03-01 | 日商東京威力科創股份有限公司 | 附有晶片之基板的製造方法及基板處理裝置 |
| US11862602B2 (en) | 2019-11-07 | 2024-01-02 | Adeia Semiconductor Technologies Llc | Scalable architecture for reduced cycles across SOC |
| US11762200B2 (en) | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
| US11876076B2 (en) | 2019-12-20 | 2024-01-16 | Adeia Semiconductor Technologies Llc | Apparatus for non-volatile random access memory stacks |
| US11721653B2 (en) | 2019-12-23 | 2023-08-08 | Adeia Semiconductor Bonding Technologies Inc. | Circuitry for electrical redundancy in bonded structures |
| CN121793755A (zh) | 2019-12-23 | 2026-04-03 | 隔热半导体粘合技术公司 | 用于接合结构的电冗余 |
| CN115943489A (zh) | 2020-03-19 | 2023-04-07 | 隔热半导体粘合技术公司 | 用于直接键合结构的尺寸补偿控制 |
| US11742314B2 (en) | 2020-03-31 | 2023-08-29 | Adeia Semiconductor Bonding Technologies Inc. | Reliable hybrid bonded apparatus |
| US11735523B2 (en) | 2020-05-19 | 2023-08-22 | Adeia Semiconductor Bonding Technologies Inc. | Laterally unconfined structure |
| US11631647B2 (en) | 2020-06-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Integrated device packages with integrated device die and dummy element |
| US11764177B2 (en) | 2020-09-04 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structure with interconnect structure |
| US11728273B2 (en) | 2020-09-04 | 2023-08-15 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structure with interconnect structure |
| US11990448B2 (en) * | 2020-09-18 | 2024-05-21 | Intel Corporation | Direct bonding in microelectronic assemblies |
| US12199018B2 (en) | 2020-09-18 | 2025-01-14 | Intel Corporation | Direct bonding in microelectronic assemblies |
| US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
| KR20230097121A (ko) * | 2020-10-29 | 2023-06-30 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 직접 접합 방법 및 구조체 |
| CN116635998A (zh) * | 2020-10-29 | 2023-08-22 | 美商艾德亚半导体接合科技有限公司 | 直接键合方法和结构 |
| EP3993021A1 (en) * | 2020-11-03 | 2022-05-04 | Infineon Technologies AG | Method of manufacturing a bonded substrate stack |
| WO2022147430A1 (en) | 2020-12-28 | 2022-07-07 | Invensas Bonding Technologies, Inc. | Structures with through-substrate vias and methods for forming the same |
| US12456662B2 (en) | 2020-12-28 | 2025-10-28 | Adeia Semiconductor Bonding Technologies Inc. | Structures with through-substrate vias and methods for forming the same |
| CN116848631A (zh) | 2020-12-30 | 2023-10-03 | 美商艾德亚半导体接合科技有限公司 | 具有导电特征的结构及其形成方法 |
| WO2022160102A1 (zh) * | 2021-01-26 | 2022-08-04 | 华为技术有限公司 | 芯片堆叠结构及其制备方法、芯片堆叠封装、电子设备 |
| US12525572B2 (en) | 2021-03-31 | 2026-01-13 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding and debonding of carrier |
| EP4315411A4 (en) | 2021-03-31 | 2025-04-30 | Adeia Semiconductor Bonding Technologies Inc. | DIRECT BINDING METHODS AND STRUCTURES |
| JP2024528964A (ja) | 2021-08-02 | 2024-08-01 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ボンデッド構造体用の保護半導体素子 |
| US12519079B2 (en) * | 2021-08-13 | 2026-01-06 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor package |
| JP2023043671A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 半導体記憶装置及びその設計方法 |
| KR20240059637A (ko) | 2021-09-24 | 2024-05-07 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 능동 인터포저를 가진 결합 구조체 |
| US12604771B2 (en) | 2021-10-28 | 2026-04-14 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding methods and structures |
| US12563749B2 (en) | 2021-10-28 | 2026-02-24 | Adeia Semiconductor Bonding Technologies Inc | Stacked electronic devices |
| US12557615B2 (en) | 2021-12-13 | 2026-02-17 | Adeia Semiconductor Technologies Llc | Methods for bonding semiconductor elements |
| JP2025500315A (ja) | 2021-12-20 | 2025-01-09 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ダイパッケージの熱電冷却 |
| KR20240156613A (ko) * | 2022-02-24 | 2024-10-30 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 결합 구조체 |
| JP2023137395A (ja) * | 2022-03-18 | 2023-09-29 | キオクシア株式会社 | 半導体装置及び半導体製造装置 |
| US12610845B2 (en) | 2022-04-22 | 2026-04-21 | Tokyo Electron Limited | Method for forming semiconductor packages using dielectric alignment marks and laser liftoff process |
| US12512425B2 (en) | 2022-04-25 | 2025-12-30 | Adeia Semiconductor Bonding Technologies Inc. | Expansion controlled structure for direct bonding and method of forming same |
| US20230369070A1 (en) * | 2022-05-12 | 2023-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package structure and method of manufacturing thereof |
| JP2025517291A (ja) | 2022-05-23 | 2025-06-05 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ボンデッド構造体のための試験用素子 |
| US20230395563A1 (en) * | 2022-06-02 | 2023-12-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple non-active dies in a multi-die package |
| JP2025537971A (ja) * | 2022-12-01 | 2025-11-20 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | フレーム構造体付きのダイレクトボンデッド構造体 |
| US12506114B2 (en) | 2022-12-29 | 2025-12-23 | Adeia Semiconductor Bonding Technologies Inc. | Directly bonded metal structures having aluminum features and methods of preparing same |
| US12545010B2 (en) | 2022-12-29 | 2026-02-10 | Adeia Semiconductor Bonding Technologies Inc. | Directly bonded metal structures having oxide layers therein |
| US12341083B2 (en) | 2023-02-08 | 2025-06-24 | Adeia Semiconductor Bonding Technologies Inc. | Electronic device cooling structures bonded to semiconductor elements |
| US12598962B2 (en) | 2023-03-14 | 2026-04-07 | Adeia Semiconductor Bonding Technologies Inc. | System and method for bonding transparent conductor substrates |
| US20250070045A1 (en) * | 2023-08-21 | 2025-02-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Packaged device with air gap and methods of forming same |
| US20250079366A1 (en) * | 2023-09-05 | 2025-03-06 | Micron Technology, Inc. | Semiconductor device with layered dielectric |
| US12604707B2 (en) | 2023-10-20 | 2026-04-14 | Canon Kabushiki Kaisha | Method including positioning a source die or a destination site to compensate for overlay error |
| US20250226308A1 (en) * | 2024-01-08 | 2025-07-10 | Micron Technology, Inc. | Semiconductor device with backside connection mechanism and methods for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101901711B1 (ko) | 2017-09-27 | 2018-09-27 | 삼성전기 주식회사 | 팬-아웃 반도체 패키지 |
Family Cites Families (612)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2626408B1 (fr) | 1988-01-22 | 1990-05-11 | Thomson Csf | Capteur d'image a faible encombrement |
| JPH0272642A (ja) | 1988-09-07 | 1990-03-12 | Nec Corp | 基板の接続構造および接続方法 |
| JPH0344067A (ja) | 1989-07-11 | 1991-02-25 | Nec Corp | 半導体基板の積層方法 |
| US5019673A (en) | 1990-08-22 | 1991-05-28 | Motorola, Inc. | Flip-chip package for integrated circuits |
| JPH04337694A (ja) | 1991-05-15 | 1992-11-25 | Nec Yamagata Ltd | 電子部品保護用樹脂膜 |
| CA2083072C (en) | 1991-11-21 | 1998-02-03 | Shinichi Hasegawa | Method for manufacturing polyimide multilayer wiring substrate |
| US6008126A (en) | 1992-04-08 | 1999-12-28 | Elm Technology Corporation | Membrane dielectric isolation IC fabrication |
| JPH07193294A (ja) | 1993-11-01 | 1995-07-28 | Matsushita Electric Ind Co Ltd | 電子部品およびその製造方法 |
| KR960009074A (ko) | 1994-08-29 | 1996-03-22 | 모리시다 요이치 | 반도체 장치 및 그 제조방법 |
| DE4433330C2 (de) | 1994-09-19 | 1997-01-30 | Fraunhofer Ges Forschung | Verfahren zur Herstellung von Halbleiterstrukturen mit vorteilhaften Hochfrequenzeigenschaften sowie eine Halbleiterwaferstruktur |
| JP3979687B2 (ja) | 1995-10-26 | 2007-09-19 | アプライド マテリアルズ インコーポレイテッド | ハロゲンをドープした酸化珪素膜の膜安定性を改良する方法 |
| KR100274333B1 (ko) | 1996-01-19 | 2001-01-15 | 모기 쥰이찌 | 도체층부착 이방성 도전시트 및 이를 사용한 배선기판 |
| US5956605A (en) | 1996-09-20 | 1999-09-21 | Micron Technology, Inc. | Use of nitrides for flip-chip encapsulation |
| US5729896A (en) | 1996-10-31 | 1998-03-24 | International Business Machines Corporation | Method for attaching a flip chip on flexible circuit carrier using chip with metallic cap on solder |
| US6221753B1 (en) | 1997-01-24 | 2001-04-24 | Micron Technology, Inc. | Flip chip technique for chip assembly |
| JP4032454B2 (ja) | 1997-06-27 | 2008-01-16 | ソニー株式会社 | 三次元回路素子の製造方法 |
| US6097096A (en) | 1997-07-11 | 2000-08-01 | Advanced Micro Devices | Metal attachment method and structure for attaching substrates at low temperatures |
| US6049124A (en) | 1997-12-10 | 2000-04-11 | Intel Corporation | Semiconductor package |
| US5854507A (en) | 1998-07-21 | 1998-12-29 | Hewlett-Packard Company | Multiple chip assembly |
| JP2000100679A (ja) | 1998-09-22 | 2000-04-07 | Canon Inc | 薄片化による基板間微小領域固相接合法及び素子構造 |
| FR2787241B1 (fr) | 1998-12-14 | 2003-01-31 | Ela Medical Sa | Composant microelectronique cms enrobe, notamment pour un dispositif medical implantable actif, et son procede de fabrication |
| JP3532788B2 (ja) | 1999-04-13 | 2004-05-31 | 唯知 須賀 | 半導体装置及びその製造方法 |
| US6782610B1 (en) | 1999-05-21 | 2004-08-31 | North Corporation | Method for fabricating a wiring substrate by electroplating a wiring film on a metal base |
| JP3767246B2 (ja) | 1999-05-26 | 2006-04-19 | 富士通株式会社 | 複合モジュール及びプリント回路基板ユニット |
| JP2001102479A (ja) | 1999-09-27 | 2001-04-13 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| US6500694B1 (en) | 2000-03-22 | 2002-12-31 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
| US6984571B1 (en) | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
| US6902987B1 (en) | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
| JP2001284520A (ja) | 2000-04-04 | 2001-10-12 | Matsushita Electric Ind Co Ltd | 半導体チップ搭載用の配線基板、配線基板の製造方法、中継接続用の配線基板、半導体装置および半導体装置間接続構造 |
| JP2001313350A (ja) | 2000-04-28 | 2001-11-09 | Sony Corp | チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法 |
| US7247932B1 (en) | 2000-05-19 | 2007-07-24 | Megica Corporation | Chip package with capacitor |
| JP4322402B2 (ja) | 2000-06-22 | 2009-09-02 | 大日本印刷株式会社 | プリント配線基板及びその製造方法 |
| JP3440057B2 (ja) | 2000-07-05 | 2003-08-25 | 唯知 須賀 | 半導体装置およびその製造方法 |
| US6423640B1 (en) | 2000-08-09 | 2002-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Headless CMP process for oxide planarization |
| JP3420748B2 (ja) | 2000-12-14 | 2003-06-30 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
| US6507115B2 (en) | 2000-12-14 | 2003-01-14 | International Business Machines Corporation | Multi-chip integrated circuit module |
| US6686588B1 (en) | 2001-01-16 | 2004-02-03 | Amkor Technology, Inc. | Optical module with lens integral holder |
| JP2002359345A (ja) | 2001-03-30 | 2002-12-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2002353416A (ja) | 2001-05-25 | 2002-12-06 | Sony Corp | 半導体記憶装置およびその製造方法 |
| US6887769B2 (en) | 2002-02-06 | 2005-05-03 | Intel Corporation | Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same |
| TWI309074B (en) | 2002-02-07 | 2009-04-21 | Advanced Epitaxy Technology | Method of forming semiconductor device |
| US6762076B2 (en) | 2002-02-20 | 2004-07-13 | Intel Corporation | Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices |
| WO2004017687A1 (en) | 2002-05-23 | 2004-02-26 | International Business Machines Corporation | Improved structure of stacked vias in multiple layer electronic device carriers |
| US7573136B2 (en) | 2002-06-27 | 2009-08-11 | Micron Technology, Inc. | Semiconductor device assemblies and packages including multiple semiconductor device components |
| US7105980B2 (en) | 2002-07-03 | 2006-09-12 | Sawtek, Inc. | Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics |
| JP4083502B2 (ja) | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
| JP4579489B2 (ja) | 2002-09-02 | 2010-11-10 | 新光電気工業株式会社 | 半導体チップ製造方法及び半導体チップ |
| US7023093B2 (en) | 2002-10-24 | 2006-04-04 | International Business Machines Corporation | Very low effective dielectric constant interconnect Structures and methods for fabricating the same |
| US6713857B1 (en) | 2002-12-05 | 2004-03-30 | Ultra Tera Corporation | Low profile stacked multi-chip semiconductor package with chip carrier having opening and fabrication method of the semiconductor package |
| JP2004193493A (ja) | 2002-12-13 | 2004-07-08 | Nec Machinery Corp | ダイピックアップ方法および装置 |
| US7354798B2 (en) | 2002-12-20 | 2008-04-08 | International Business Machines Corporation | Three-dimensional device fabrication method |
| TW586677U (en) | 2003-01-22 | 2004-05-01 | Via Tech Inc | Stack structure of chip package |
| US6962835B2 (en) | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
| TWI239629B (en) | 2003-03-17 | 2005-09-11 | Seiko Epson Corp | Method of manufacturing semiconductor device, semiconductor device, circuit substrate and electronic apparatus |
| US6908027B2 (en) | 2003-03-31 | 2005-06-21 | Intel Corporation | Complete device layer transfer without edge exclusion via direct wafer bonding and constrained bond-strengthening process |
| US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
| TWI275168B (en) | 2003-06-06 | 2007-03-01 | Sanyo Electric Co | Semiconductor device and method for making the same |
| US6873049B2 (en) | 2003-07-31 | 2005-03-29 | The Boeing Company | Near hermetic power chip on board device and manufacturing method therefor |
| US6867073B1 (en) | 2003-10-21 | 2005-03-15 | Ziptronix, Inc. | Single mask via method and device |
| US7183643B2 (en) | 2003-11-04 | 2007-02-27 | Tessera, Inc. | Stacked packages and systems incorporating the same |
| US7205233B2 (en) | 2003-11-07 | 2007-04-17 | Applied Materials, Inc. | Method for forming CoWRe alloys by electroless deposition |
| JP2005175423A (ja) | 2003-11-18 | 2005-06-30 | Denso Corp | 半導体パッケージ |
| TWI228286B (en) | 2003-11-24 | 2005-02-21 | Ind Tech Res Inst | Bonding structure with buffer layer and method of forming the same |
| US7060601B2 (en) | 2003-12-17 | 2006-06-13 | Tru-Si Technologies, Inc. | Packaging substrates for integrated circuits and soldering methods |
| KR100538158B1 (ko) | 2004-01-09 | 2005-12-22 | 삼성전자주식회사 | 웨이퍼 레벨 적층 칩 접착 방법 |
| US20050161808A1 (en) | 2004-01-22 | 2005-07-28 | Anderson Douglas G. | Wafer, intermediate wafer assembly and associated method for fabricating a silicon on insulator wafer having an improved edge profile |
| DE102004013681B3 (de) | 2004-03-18 | 2005-11-17 | Infineon Technologies Ag | Halbleitermodul mit einem Kopplungssubstrat und Verfahren zur Herstellung desselben |
| JP4865197B2 (ja) | 2004-06-30 | 2012-02-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN102290425B (zh) | 2004-08-20 | 2014-04-02 | Kamiyacho知识产权控股公司 | 具有三维层叠结构的半导体器件的制造方法 |
| US20060057945A1 (en) | 2004-09-16 | 2006-03-16 | Chia-Lin Hsu | Chemical mechanical polishing process |
| US7566634B2 (en) | 2004-09-24 | 2009-07-28 | Interuniversitair Microelektronica Centrum (Imec) | Method for chip singulation |
| US20060076634A1 (en) | 2004-09-27 | 2006-04-13 | Lauren Palmateer | Method and system for packaging MEMS devices with incorporated getter |
| US7262492B2 (en) | 2004-09-28 | 2007-08-28 | Intel Corporation | Semiconducting device that includes wirebonds |
| WO2006043122A1 (en) | 2004-10-21 | 2006-04-27 | Infineon Technologies Ag | Semiconductor package and method to produce the same |
| TWI303864B (en) | 2004-10-26 | 2008-12-01 | Sanyo Electric Co | Semiconductor device and method for making the same |
| FR2880184B1 (fr) | 2004-12-28 | 2007-03-30 | Commissariat Energie Atomique | Procede de detourage d'une structure obtenue par assemblage de deux plaques |
| GB0505680D0 (en) | 2005-03-22 | 2005-04-27 | Cambridge Display Tech Ltd | Apparatus and method for increased device lifetime in an organic electro-luminescent device |
| TWI242820B (en) | 2005-03-29 | 2005-11-01 | Siliconware Precision Industries Co Ltd | Sensor semiconductor device and method for fabricating the same |
| US7364945B2 (en) | 2005-03-31 | 2008-04-29 | Stats Chippac Ltd. | Method of mounting an integrated circuit package in an encapsulant cavity |
| JP4275096B2 (ja) | 2005-04-14 | 2009-06-10 | パナソニック株式会社 | 半導体チップの製造方法 |
| US7354862B2 (en) | 2005-04-18 | 2008-04-08 | Intel Corporation | Thin passivation layer on 3D devices |
| US7671449B2 (en) | 2005-05-04 | 2010-03-02 | Sun Microsystems, Inc. | Structures and methods for an application of a flexible bridge |
| US7946331B2 (en) | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
| JP4983049B2 (ja) | 2005-06-24 | 2012-07-25 | セイコーエプソン株式会社 | 半導体装置および電子機器 |
| US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
| US7786572B2 (en) | 2005-09-13 | 2010-08-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | System in package (SIP) structure |
| US7682937B2 (en) | 2005-11-25 | 2010-03-23 | Advanced Laser Separation International B.V. | Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement |
| KR100804392B1 (ko) | 2005-12-02 | 2008-02-15 | 주식회사 네패스 | 반도체 패키지 및 그 제조 방법 |
| US7193423B1 (en) | 2005-12-12 | 2007-03-20 | International Business Machines Corporation | Wafer-to-wafer alignments |
| DE102005060081B4 (de) | 2005-12-15 | 2007-08-30 | Infineon Technologies Ag | Elektronisches Bauteil mit zumindest einer Leiterplatte und mit einer Mehrzahl gleichartiger Halbleiterbausteine und Verfahren |
| US7402442B2 (en) | 2005-12-21 | 2008-07-22 | International Business Machines Corporation | Physically highly secure multi-chip assembly |
| US7781309B2 (en) | 2005-12-22 | 2010-08-24 | Sumco Corporation | Method for manufacturing direct bonded SOI wafer and direct bonded SOI wafer manufactured by the method |
| US20070158024A1 (en) | 2006-01-11 | 2007-07-12 | Symbol Technologies, Inc. | Methods and systems for removing multiple die(s) from a surface |
| TWI299552B (en) | 2006-03-24 | 2008-08-01 | Advanced Semiconductor Eng | Package structure |
| US7972683B2 (en) | 2006-03-28 | 2011-07-05 | Innovative Micro Technology | Wafer bonding material with embedded conductive particles |
| JP4160083B2 (ja) | 2006-04-11 | 2008-10-01 | シャープ株式会社 | 光学装置用モジュール及び光学装置用モジュールの製造方法 |
| JP4844216B2 (ja) | 2006-04-26 | 2011-12-28 | 凸版印刷株式会社 | 多層回路配線基板及び半導体装置 |
| US7385283B2 (en) | 2006-06-27 | 2008-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional integrated circuit and method of making the same |
| US7554203B2 (en) | 2006-06-30 | 2009-06-30 | Intel Corporation | Electronic assembly with stacked IC's using two or more different connection technologies and methods of manufacture |
| US7750488B2 (en) | 2006-07-10 | 2010-07-06 | Tezzaron Semiconductor, Inc. | Method for bonding wafers to produce stacked integrated circuits |
| KR100809696B1 (ko) | 2006-08-08 | 2008-03-06 | 삼성전자주식회사 | 사이즈가 상이한 복수의 반도체 칩이 적층된 멀티 칩패키지 및 그 제조방법 |
| TWI305036B (en) | 2006-09-28 | 2009-01-01 | Siliconware Precision Industries Co Ltd | Sensor-type package structure and fabrication method thereof |
| US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
| JP2008130603A (ja) | 2006-11-16 | 2008-06-05 | Toshiba Corp | イメージセンサ用ウェハレベルパッケージ及びその製造方法 |
| JP5011981B2 (ja) | 2006-11-30 | 2012-08-29 | 富士通株式会社 | デバイス素子製造方法およびダイシング方法 |
| US7812459B2 (en) | 2006-12-19 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional integrated circuits with protection layers |
| US8178964B2 (en) | 2007-03-30 | 2012-05-15 | Advanced Chip Engineering Technology, Inc. | Semiconductor device package with die receiving through-hole and dual build-up layers over both side-surfaces for WLP and method of the same |
| US8178963B2 (en) | 2007-01-03 | 2012-05-15 | Advanced Chip Engineering Technology Inc. | Wafer level package with die receiving through-hole and method of the same |
| US20080165521A1 (en) | 2007-01-09 | 2008-07-10 | Kerry Bernstein | Three-dimensional architecture for self-checking and self-repairing integrated circuits |
| US7803693B2 (en) | 2007-02-15 | 2010-09-28 | John Trezza | Bowed wafer hybridization compensation |
| US7919410B2 (en) | 2007-03-14 | 2011-04-05 | Aptina Imaging Corporation | Packaging methods for imager devices |
| US8609463B2 (en) | 2007-03-16 | 2013-12-17 | Stats Chippac Ltd. | Integrated circuit package system employing multi-package module techniques |
| JP2008258383A (ja) | 2007-04-04 | 2008-10-23 | Spansion Llc | 半導体装置及びその製造方法 |
| US7977211B2 (en) | 2007-04-17 | 2011-07-12 | Imec | Method for reducing the thickness of substrates |
| JP4734282B2 (ja) | 2007-04-23 | 2011-07-27 | 株式会社日立製作所 | 半導体チップおよび半導体装置 |
| US8119500B2 (en) | 2007-04-25 | 2012-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer bonding |
| DE102007020656B4 (de) | 2007-04-30 | 2009-05-07 | Infineon Technologies Ag | Werkstück mit Halbleiterchips, Halbleiterbauteil und Verfahren zur Herstellung eines Werkstücks mit Halbleiterchips |
| US7723159B2 (en) | 2007-05-04 | 2010-05-25 | Stats Chippac, Ltd. | Package-on-package using through-hole via die on saw streets |
| TWI332790B (en) | 2007-06-13 | 2010-11-01 | Ind Tech Res Inst | Image sensor module with a three-dimensional dies-stacking structure |
| US7553752B2 (en) | 2007-06-20 | 2009-06-30 | Stats Chippac, Ltd. | Method of making a wafer level integration package |
| US20090001599A1 (en) | 2007-06-28 | 2009-01-01 | Spansion Llc | Die attachment, die stacking, and wire embedding using film |
| US20090029274A1 (en) | 2007-07-25 | 2009-01-29 | 3M Innovative Properties Company | Method for removing contamination with fluorinated compositions |
| US8044497B2 (en) | 2007-09-10 | 2011-10-25 | Intel Corporation | Stacked die package |
| US20090127667A1 (en) | 2007-11-21 | 2009-05-21 | Powertech Technology Inc. | Semiconductor chip device having through-silicon-via (TSV) and its fabrication method |
| JP2009135348A (ja) | 2007-12-03 | 2009-06-18 | Panasonic Corp | 半導体チップと半導体装置およびそれらの製造方法 |
| US7871902B2 (en) | 2008-02-13 | 2011-01-18 | Infineon Technologies Ag | Crack stop trenches |
| US8120186B2 (en) | 2008-02-15 | 2012-02-21 | Qimonda Ag | Integrated circuit and method |
| JP2009212315A (ja) * | 2008-03-04 | 2009-09-17 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| EP2255378B1 (en) | 2008-03-05 | 2015-08-05 | The Board of Trustees of the University of Illinois | Stretchable and foldable electronic devices |
| CN102015943A (zh) | 2008-03-07 | 2011-04-13 | 3M创新有限公司 | 具有图案化背衬的切割带和晶粒附连粘合剂 |
| US8064224B2 (en) | 2008-03-31 | 2011-11-22 | Intel Corporation | Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same |
| KR20090106822A (ko) | 2008-04-07 | 2009-10-12 | 삼성전자주식회사 | 웨이퍼 본딩 방법 및 그 방법에 의해 본딩된 웨이퍼 구조체 |
| US7968373B2 (en) | 2008-05-02 | 2011-06-28 | Stats Chippac Ltd. | Integrated circuit package on package system |
| US8253230B2 (en) | 2008-05-15 | 2012-08-28 | Micron Technology, Inc. | Disabling electrical connections using pass-through 3D interconnects and associated systems and methods |
| US8349635B1 (en) | 2008-05-20 | 2013-01-08 | Silicon Laboratories Inc. | Encapsulated MEMS device and method to form the same |
| US7969009B2 (en) | 2008-06-30 | 2011-06-28 | Qualcomm Incorporated | Through silicon via bridge interconnect |
| JP2010034294A (ja) * | 2008-07-29 | 2010-02-12 | Nec Electronics Corp | 半導体装置およびその設計方法 |
| US8193632B2 (en) | 2008-08-06 | 2012-06-05 | Industrial Technology Research Institute | Three-dimensional conducting structure and method of fabricating the same |
| WO2010024678A1 (en) | 2008-09-01 | 2010-03-04 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno | Chip die clamping device and transfer method |
| US9893004B2 (en) | 2011-07-27 | 2018-02-13 | Broadpak Corporation | Semiconductor interposer integration |
| US9818680B2 (en) | 2011-07-27 | 2017-11-14 | Broadpak Corporation | Scalable semiconductor interposer integration |
| JP2010073964A (ja) | 2008-09-19 | 2010-04-02 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
| KR20100037300A (ko) | 2008-10-01 | 2010-04-09 | 삼성전자주식회사 | 내장형 인터포저를 갖는 반도체장치의 형성방법 |
| US7843052B1 (en) | 2008-11-13 | 2010-11-30 | Amkor Technology, Inc. | Semiconductor devices and fabrication methods thereof |
| US8506867B2 (en) | 2008-11-19 | 2013-08-13 | Semprius, Inc. | Printing semiconductor elements by shear-assisted elastomeric stamp transfer |
| FR2938976A1 (fr) | 2008-11-24 | 2010-05-28 | St Microelectronics Grenoble | Dispositif semi-conducteur a composants empiles |
| US7897481B2 (en) | 2008-12-05 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | High throughput die-to-wafer bonding using pre-alignment |
| US8168458B2 (en) | 2008-12-08 | 2012-05-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming bond wires and stud bumps in recessed region of peripheral area around the device for electrical interconnection to other devices |
| KR100945800B1 (ko) | 2008-12-09 | 2010-03-05 | 김영혜 | 이종 접합 웨이퍼 제조방법 |
| US20100164083A1 (en) | 2008-12-29 | 2010-07-01 | Numonyx B.V. | Protective thin film coating in chip packaging |
| US7816856B2 (en) | 2009-02-25 | 2010-10-19 | Global Oled Technology Llc | Flexible oled display with chiplets |
| US8610019B2 (en) | 2009-02-27 | 2013-12-17 | Mineral Separation Technologies Inc. | Methods for sorting materials |
| JP5714564B2 (ja) | 2009-03-30 | 2015-05-07 | クゥアルコム・インコーポレイテッドQualcomm Incorporated | 上部ポストパッシベーション技術および底部構造技術を使用する集積回路チップ |
| US8476165B2 (en) | 2009-04-01 | 2013-07-02 | Tokyo Electron Limited | Method for thinning a bonding wafer |
| US20100258952A1 (en) | 2009-04-08 | 2010-10-14 | Interconnect Portfolio Llc | Interconnection of IC Chips by Flex Circuit Superstructure |
| JP2010245383A (ja) | 2009-04-08 | 2010-10-28 | Elpida Memory Inc | 半導体装置および半導体装置の製造方法 |
| US8013525B2 (en) | 2009-04-09 | 2011-09-06 | Global Oled Technology Llc | Flexible OLED display with chiplets |
| US8072056B2 (en) | 2009-06-10 | 2011-12-06 | Medtronic, Inc. | Apparatus for restricting moisture ingress |
| US8227904B2 (en) | 2009-06-24 | 2012-07-24 | Intel Corporation | Multi-chip package and method of providing die-to-die interconnects in same |
| US8263434B2 (en) | 2009-07-31 | 2012-09-11 | Stats Chippac, Ltd. | Semiconductor device and method of mounting die with TSV in cavity of substrate for electrical interconnect of Fi-PoP |
| JP5304536B2 (ja) | 2009-08-24 | 2013-10-02 | ソニー株式会社 | 半導体装置 |
| US8482132B2 (en) | 2009-10-08 | 2013-07-09 | International Business Machines Corporation | Pad bonding employing a self-aligned plated liner for adhesion enhancement |
| JP5697898B2 (ja) | 2009-10-09 | 2015-04-08 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及びその製造方法 |
| JP2011128140A (ja) | 2009-11-19 | 2011-06-30 | Dainippon Printing Co Ltd | センサデバイス及びその製造方法 |
| US9202769B2 (en) | 2009-11-25 | 2015-12-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming thermal lid for balancing warpage and thermal management |
| EP2339614A1 (en) | 2009-12-22 | 2011-06-29 | Imec | Method for stacking semiconductor chips |
| FR2954585B1 (fr) | 2009-12-23 | 2012-03-02 | Soitec Silicon Insulator Technologies | Procede de realisation d'une heterostructure avec minimisation de contrainte |
| US8138014B2 (en) | 2010-01-29 | 2012-03-20 | Stats Chippac, Ltd. | Method of forming thin profile WLCSP with vertical interconnect over package footprint |
| JP5609144B2 (ja) | 2010-02-19 | 2014-10-22 | ソニー株式会社 | 半導体装置および貫通電極のテスト方法 |
| JP2011171614A (ja) | 2010-02-22 | 2011-09-01 | Casio Computer Co Ltd | 半導体装置及び半導体装置の製造方法 |
| US9385095B2 (en) | 2010-02-26 | 2016-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D semiconductor package interposer with die cavity |
| US8810008B2 (en) | 2010-03-18 | 2014-08-19 | Nec Corporation | Semiconductor element-embedded substrate, and method of manufacturing the substrate |
| US8241964B2 (en) | 2010-05-13 | 2012-08-14 | Stats Chippac, Ltd. | Semiconductor device and method of embedding bumps formed on semiconductor die into penetrable adhesive layer to reduce die shifting during encapsulation |
| US8674513B2 (en) | 2010-05-13 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures for substrate |
| JP5517800B2 (ja) | 2010-07-09 | 2014-06-11 | キヤノン株式会社 | 固体撮像装置用の部材および固体撮像装置の製造方法 |
| US8481406B2 (en) | 2010-07-15 | 2013-07-09 | Soitec | Methods of forming bonded semiconductor structures |
| SG177816A1 (en) | 2010-07-15 | 2012-02-28 | Soitec Silicon On Insulator | Methods of forming bonded semiconductor structures, and semiconductor structures formed by such methods |
| US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
| US8415808B2 (en) | 2010-07-28 | 2013-04-09 | Sandisk Technologies Inc. | Semiconductor device with die stack arrangement including staggered die and efficient wire bonding |
| US8361842B2 (en) | 2010-07-30 | 2013-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded wafer-level bonding approaches |
| US8288201B2 (en) | 2010-08-25 | 2012-10-16 | Stats Chippac, Ltd. | Semiconductor device and method of forming FO-WLCSP with discrete semiconductor components mounted under and over semiconductor die |
| US8435835B2 (en) | 2010-09-02 | 2013-05-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming base leads from base substrate as standoff for stacking semiconductor die |
| US9224647B2 (en) | 2010-09-24 | 2015-12-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming TSV interposer with semiconductor die and build-up interconnect structure on opposing surfaces of the interposer |
| KR20120032254A (ko) | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 적층 패키지 및 이의 제조 방법 |
| FR2966283B1 (fr) | 2010-10-14 | 2012-11-30 | Soi Tec Silicon On Insulator Tech Sa | Procede pour realiser une structure de collage |
| US8377798B2 (en) | 2010-11-10 | 2013-02-19 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and structure for wafer to wafer bonding in semiconductor packaging |
| TWI538071B (zh) | 2010-11-16 | 2016-06-11 | 星科金朋有限公司 | 具連接結構之積體電路封裝系統及其製造方法 |
| US8476146B2 (en) | 2010-12-03 | 2013-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing wafer distortion through a low CTE layer |
| US8987137B2 (en) | 2010-12-16 | 2015-03-24 | Lsi Corporation | Method of fabrication of through-substrate vias |
| US8620164B2 (en) | 2011-01-20 | 2013-12-31 | Intel Corporation | Hybrid III-V silicon laser formed by direct bonding |
| JP5682327B2 (ja) | 2011-01-25 | 2015-03-11 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、及び電子機器 |
| US20120194719A1 (en) | 2011-02-01 | 2012-08-02 | Scott Churchwell | Image sensor units with stacked image sensors and image processors |
| JP5659033B2 (ja) | 2011-02-04 | 2015-01-28 | 株式会社東芝 | 半導体装置の製造方法 |
| US20120199960A1 (en) | 2011-02-07 | 2012-08-09 | Texas Instruments Incorporated | Wire bonding for interconnection between interposer and flip chip die |
| US8988299B2 (en) | 2011-02-17 | 2015-03-24 | International Business Machines Corporation | Integrated antenna for RFIC package applications |
| US8623702B2 (en) | 2011-02-24 | 2014-01-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming conductive THV and RDL on opposite sides of semiconductor die for RDL-to-RDL bonding |
| WO2012125632A1 (en) | 2011-03-16 | 2012-09-20 | Memc Electronic Materials, Inc. | Silicon on insulator structures having high resistivity regions in the handle wafer and methods for producing such structures |
| US8716105B2 (en) | 2011-03-31 | 2014-05-06 | Soitec | Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods |
| US8501537B2 (en) | 2011-03-31 | 2013-08-06 | Soitec | Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods |
| KR20120123919A (ko) | 2011-05-02 | 2012-11-12 | 삼성전자주식회사 | 칩 적층 반도체 패키지 제조 방법 및 이에 의해 제조된 칩 적층 반도체 패키지 |
| KR101952976B1 (ko) | 2011-05-24 | 2019-02-27 | 소니 주식회사 | 반도체 장치 |
| US9252172B2 (en) | 2011-05-31 | 2016-02-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region |
| US9029242B2 (en) | 2011-06-15 | 2015-05-12 | Applied Materials, Inc. | Damage isolation by shaped beam delivery in laser scribing process |
| KR20130007371A (ko) | 2011-07-01 | 2013-01-18 | 삼성전자주식회사 | 반도체 패키지 |
| JP5982748B2 (ja) | 2011-08-01 | 2016-08-31 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、および電子機器 |
| US8697493B2 (en) | 2011-07-18 | 2014-04-15 | Soitec | Bonding surfaces for direct bonding of semiconductor structures |
| US8710648B2 (en) | 2011-08-09 | 2014-04-29 | Alpha & Omega Semiconductor, Inc. | Wafer level packaging structure with large contact area and preparation method thereof |
| US9190297B2 (en) | 2011-08-11 | 2015-11-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming a stackable semiconductor package with vertically-oriented discrete electrical devices as interconnect structures |
| US8441131B2 (en) | 2011-09-12 | 2013-05-14 | Globalfoundries Inc. | Strain-compensating fill patterns for controlling semiconductor chip package interactions |
| US8816404B2 (en) | 2011-09-16 | 2014-08-26 | Stats Chippac, Ltd. | Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant |
| US20130075923A1 (en) | 2011-09-23 | 2013-03-28 | YeongIm Park | Integrated circuit packaging system with encapsulation and method of manufacture thereof |
| KR101906408B1 (ko) | 2011-10-04 | 2018-10-11 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| JP5780228B2 (ja) | 2011-11-11 | 2015-09-16 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
| TWI467736B (zh) | 2012-01-04 | 2015-01-01 | 國立交通大學 | 立體積體電路裝置 |
| US8686570B2 (en) | 2012-01-20 | 2014-04-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-dimensional integrated circuit structures and methods of forming the same |
| US8698308B2 (en) | 2012-01-31 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structural designs to minimize package defects |
| JP5994274B2 (ja) | 2012-02-14 | 2016-09-21 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及び、電子機器 |
| TWI469312B (zh) | 2012-03-09 | 2015-01-11 | 財團法人工業技術研究院 | 晶片堆疊結構及其製作方法 |
| US20130265733A1 (en) | 2012-04-04 | 2013-10-10 | Texas Instruments Incorporated | Interchip communication using an embedded dielectric waveguide |
| US9111949B2 (en) | 2012-04-09 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus of wafer level package for heterogeneous integration technology |
| CN103377911B (zh) | 2012-04-16 | 2016-09-21 | 中国科学院微电子研究所 | 提高化学机械平坦化工艺均匀性的方法 |
| US20130277855A1 (en) | 2012-04-24 | 2013-10-24 | Terry (Teckgyu) Kang | High density 3d package |
| US8809123B2 (en) | 2012-06-05 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers |
| US9142517B2 (en) | 2012-06-05 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid bonding mechanisms for semiconductor wafers |
| US8723309B2 (en) | 2012-06-14 | 2014-05-13 | Stats Chippac Ltd. | Integrated circuit packaging system with through silicon via and method of manufacture thereof |
| KR20140006587A (ko) | 2012-07-06 | 2014-01-16 | 삼성전자주식회사 | 반도체 패키지 |
| US8759961B2 (en) | 2012-07-16 | 2014-06-24 | International Business Machines Corporation | Underfill material dispensing for stacked semiconductor chips |
| US9006908B2 (en) | 2012-08-01 | 2015-04-14 | Marvell Israel (M.I.S.L) Ltd. | Integrated circuit interposer and method of manufacturing the same |
| US8963336B2 (en) | 2012-08-03 | 2015-02-24 | Samsung Electronics Co., Ltd. | Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same |
| US8735219B2 (en) | 2012-08-30 | 2014-05-27 | Ziptronix, Inc. | Heterogeneous annealing method and device |
| US9136293B2 (en) | 2012-09-07 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for sensor module |
| US8872349B2 (en) | 2012-09-11 | 2014-10-28 | Intel Corporation | Bridge interconnect with air gap in package assembly |
| US9099475B2 (en) * | 2012-09-12 | 2015-08-04 | Freescale Semiconductor, Inc. | Techniques for reducing inductance in through-die vias of an electronic assembly |
| US20140070405A1 (en) | 2012-09-13 | 2014-03-13 | Globalfoundries Inc. | Stacked semiconductor devices with a glass window wafer having an engineered coefficient of thermal expansion and methods of making same |
| US8963335B2 (en) | 2012-09-13 | 2015-02-24 | Invensas Corporation | Tunable composite interposer |
| US9368404B2 (en) | 2012-09-28 | 2016-06-14 | Plasma-Therm Llc | Method for dicing a substrate with back metal |
| US8912670B2 (en) | 2012-09-28 | 2014-12-16 | Intel Corporation | Bumpless build-up layer package including an integrated heat spreader |
| US9136236B2 (en) | 2012-09-28 | 2015-09-15 | Intel Corporation | Localized high density substrate routing |
| US9177884B2 (en) | 2012-10-09 | 2015-11-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Two-sided-access extended wafer-level ball grid array (eWLB) package, assembly and method |
| US8975726B2 (en) | 2012-10-11 | 2015-03-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | POP structures and methods of forming the same |
| KR20140058020A (ko) | 2012-11-05 | 2014-05-14 | 삼성전자주식회사 | 발광 소자 및 그 제조 방법 |
| US9252491B2 (en) * | 2012-11-30 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedding low-k materials in antennas |
| US9190380B2 (en) | 2012-12-06 | 2015-11-17 | Intel Corporation | High density substrate routing in BBUL package |
| US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
| DE102012224310A1 (de) | 2012-12-21 | 2014-06-26 | Tesa Se | Gettermaterial enthaltendes Klebeband |
| US20140175655A1 (en) | 2012-12-22 | 2014-06-26 | Industrial Technology Research Institute | Chip bonding structure and manufacturing method thereof |
| US8970023B2 (en) | 2013-02-04 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and methods of forming same |
| TWI518991B (zh) | 2013-02-08 | 2016-01-21 | 巽晨國際股份有限公司 | Integrated antenna and integrated circuit components of the shielding module |
| US8946784B2 (en) | 2013-02-18 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for image sensor packaging |
| US8901748B2 (en) | 2013-03-14 | 2014-12-02 | Intel Corporation | Direct external interconnect for embedded interconnect bridge package |
| US9087765B2 (en) | 2013-03-15 | 2015-07-21 | Qualcomm Incorporated | System-in-package with interposer pitch adapter |
| US9443796B2 (en) | 2013-03-15 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air trench in packages incorporating hybrid bonding |
| US10269619B2 (en) | 2013-03-15 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer level chip scale packaging intermediate structure apparatus and method |
| US8802538B1 (en) | 2013-03-15 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for hybrid wafer bonding |
| US9312198B2 (en) | 2013-03-15 | 2016-04-12 | Intel Deutschland Gmbh | Chip package-in-package and method thereof |
| US9054063B2 (en) | 2013-04-05 | 2015-06-09 | Infineon Technologies Ag | High power single-die semiconductor package |
| US9064937B2 (en) | 2013-05-30 | 2015-06-23 | International Business Machines Corporation | Substrate bonding with diffusion barrier structures |
| FR3007403B1 (fr) | 2013-06-20 | 2016-08-05 | Commissariat Energie Atomique | Procede de realisation d'un dispositif microelectronique mecaniquement autonome |
| KR102077153B1 (ko) | 2013-06-21 | 2020-02-14 | 삼성전자주식회사 | 관통전극을 갖는 반도체 패키지 및 그 제조방법 |
| JP2015012244A (ja) | 2013-07-01 | 2015-01-19 | 株式会社東芝 | 半導体発光素子 |
| US9929050B2 (en) | 2013-07-16 | 2018-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming three-dimensional integrated circuit (3DIC) stacking structure |
| US9324698B2 (en) | 2013-08-13 | 2016-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-chip structure and method of forming same |
| US9633869B2 (en) | 2013-08-16 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages with interposers and methods for forming the same |
| JP6212720B2 (ja) | 2013-09-20 | 2017-10-18 | パナソニックIpマネジメント株式会社 | 半導体装置及びその製造方法 |
| US9159690B2 (en) | 2013-09-25 | 2015-10-13 | Intel Corporation | Tall solders for through-mold interconnect |
| US9349703B2 (en) | 2013-09-25 | 2016-05-24 | Intel Corporation | Method for making high density substrate interconnect using inkjet printing |
| US9093337B2 (en) * | 2013-09-27 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for controlling warpage in packaging |
| US9723716B2 (en) | 2013-09-27 | 2017-08-01 | Infineon Technologies Ag | Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure |
| FR3011679B1 (fr) | 2013-10-03 | 2017-01-27 | Commissariat Energie Atomique | Procede ameliore d'assemblage par collage direct entre deux elements, chaque element comprenant des portions de metal et de materiaux dielectriques |
| KR102143518B1 (ko) | 2013-10-16 | 2020-08-11 | 삼성전자 주식회사 | 칩 적층 반도체 패키지 및 그 제조 방법 |
| US9257399B2 (en) | 2013-10-17 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D integrated circuit and methods of forming the same |
| KR102149150B1 (ko) * | 2013-10-21 | 2020-08-28 | 삼성전자주식회사 | 전자 장치 |
| US9373527B2 (en) | 2013-10-30 | 2016-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chip on package structure and method |
| US9530730B2 (en) | 2013-11-08 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Configurable routing for packaging applications |
| JP6441025B2 (ja) | 2013-11-13 | 2018-12-19 | 株式会社東芝 | 半導体チップの製造方法 |
| US9570421B2 (en) | 2013-11-14 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacking of multiple dies for forming three dimensional integrated circuit (3DIC) structure |
| KR102147354B1 (ko) | 2013-11-14 | 2020-08-24 | 삼성전자 주식회사 | 반도체 패키지 및 그 제조 방법 |
| US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
| US9330954B2 (en) | 2013-11-22 | 2016-05-03 | Invensas Corporation | Substrate-to-carrier adhesion without mechanical adhesion between abutting surfaces thereof |
| US9224697B1 (en) | 2013-12-09 | 2015-12-29 | Xilinx, Inc. | Multi-die integrated circuits implemented using spacer dies |
| JP2015115446A (ja) | 2013-12-11 | 2015-06-22 | 株式会社東芝 | 半導体装置の製造方法 |
| US9318474B2 (en) | 2013-12-16 | 2016-04-19 | Apple Inc. | Thermally enhanced wafer level fan-out POP package |
| US9437572B2 (en) | 2013-12-18 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive pad structure for hybrid bonding and methods of forming same |
| JP6273362B2 (ja) | 2013-12-23 | 2018-01-31 | インテル コーポレイション | パッケージ構造上のパッケージ及びこれを製造するための方法 |
| US9768038B2 (en) | 2013-12-23 | 2017-09-19 | STATS ChipPAC, Pte. Ltd. | Semiconductor device and method of making embedded wafer level chip scale packages |
| CN103730379A (zh) | 2014-01-16 | 2014-04-16 | 苏州晶方半导体科技股份有限公司 | 芯片封装方法及结构 |
| US9396300B2 (en) | 2014-01-16 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaging methods for semiconductor devices, packaged semiconductor devices, and design methods thereof |
| US9653442B2 (en) | 2014-01-17 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package and methods of forming same |
| US9343433B2 (en) | 2014-01-28 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages with stacked dies and methods of forming the same |
| US20150287697A1 (en) | 2014-04-02 | 2015-10-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Device and Method |
| US10971476B2 (en) | 2014-02-18 | 2021-04-06 | Qualcomm Incorporated | Bottom package with metal post interconnections |
| US9293437B2 (en) | 2014-02-20 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Functional block stacked 3DIC and method of making same |
| US20150255349A1 (en) | 2014-03-07 | 2015-09-10 | JAMES Matthew HOLDEN | Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes |
| US20150262902A1 (en) | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
| US9355997B2 (en) | 2014-03-12 | 2016-05-31 | Invensas Corporation | Integrated circuit assemblies with reinforcement frames, and methods of manufacture |
| US9418924B2 (en) | 2014-03-20 | 2016-08-16 | Invensas Corporation | Stacked die integrated circuit |
| US9230941B2 (en) | 2014-03-28 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding structure for stacked semiconductor devices |
| US9299736B2 (en) | 2014-03-28 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid bonding with uniform pattern density |
| US9076860B1 (en) | 2014-04-04 | 2015-07-07 | Applied Materials, Inc. | Residue removal from singulated die sidewall |
| US8975163B1 (en) | 2014-04-10 | 2015-03-10 | Applied Materials, Inc. | Laser-dominated laser scribing and plasma etch hybrid wafer dicing |
| US9601463B2 (en) | 2014-04-17 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out stacked system in package (SIP) and the methods of making the same |
| US9472458B2 (en) | 2014-06-04 | 2016-10-18 | Semiconductor Components Industries, Llc | Method of reducing residual contamination in singulated semiconductor die |
| US9385110B2 (en) | 2014-06-18 | 2016-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| KR102275705B1 (ko) | 2014-07-11 | 2021-07-09 | 삼성전자주식회사 | 웨이퍼 대 웨이퍼 접합 구조 |
| US9601353B2 (en) | 2014-07-30 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages with molding structures and methods of forming the same |
| US9666559B2 (en) | 2014-09-05 | 2017-05-30 | Invensas Corporation | Multichip modules and methods of fabrication |
| US9601437B2 (en) | 2014-09-09 | 2017-03-21 | Nxp B.V. | Plasma etching and stealth dicing laser process |
| US10468381B2 (en) | 2014-09-29 | 2019-11-05 | Apple Inc. | Wafer level integration of passive devices |
| US9536848B2 (en) | 2014-10-16 | 2017-01-03 | Globalfoundries Inc. | Bond pad structure for low temperature flip chip bonding |
| US9394161B2 (en) | 2014-11-14 | 2016-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS and CMOS integration with low-temperature bonding |
| US9673096B2 (en) | 2014-11-14 | 2017-06-06 | Infineon Technologies Ag | Method for processing a semiconductor substrate and a method for processing a semiconductor wafer |
| KR102360381B1 (ko) | 2014-12-01 | 2022-02-11 | 삼성전자주식회사 | 적층 구조를 갖는 반도체 소자 및 그 제조방법 |
| US9548273B2 (en) | 2014-12-04 | 2017-01-17 | Invensas Corporation | Integrated circuit assemblies with rigid layers used for protection against mechanical thinning and for other purposes, and methods of fabricating such assemblies |
| US9899442B2 (en) | 2014-12-11 | 2018-02-20 | Invensas Corporation | Image sensor device |
| US11069734B2 (en) | 2014-12-11 | 2021-07-20 | Invensas Corporation | Image sensor device |
| WO2016099446A1 (en) | 2014-12-15 | 2016-06-23 | Intel Corporation | Opossum-die package-on-package apparatus |
| US9583462B2 (en) | 2015-01-22 | 2017-02-28 | Qualcomm Incorporated | Damascene re-distribution layer (RDL) in fan out split die application |
| KR101672622B1 (ko) | 2015-02-09 | 2016-11-03 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
| US9508660B2 (en) | 2015-02-10 | 2016-11-29 | Intel Corporation | Microelectronic die having chamfered corners |
| US9633974B2 (en) | 2015-03-04 | 2017-04-25 | Apple Inc. | System in package fan out stacking architecture and process flow |
| DE102015103274A1 (de) | 2015-03-06 | 2016-09-08 | HARTING Electronics GmbH | Kabelabdichtung |
| JP6738591B2 (ja) | 2015-03-13 | 2020-08-12 | 古河電気工業株式会社 | 半導体ウェハの処理方法、半導体チップおよび表面保護テープ |
| US9443824B1 (en) | 2015-03-30 | 2016-09-13 | Qualcomm Incorporated | Cavity bridge connection for die split architecture |
| US9659907B2 (en) | 2015-04-07 | 2017-05-23 | Apple Inc. | Double side mounting memory integration in thin low warpage fanout package |
| US10068862B2 (en) | 2015-04-09 | 2018-09-04 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a package in-fan out package |
| US10074630B2 (en) | 2015-04-14 | 2018-09-11 | Amkor Technology, Inc. | Semiconductor package with high routing density patch |
| US9666502B2 (en) | 2015-04-17 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Discrete polymer in fan-out packages |
| US9601471B2 (en) | 2015-04-23 | 2017-03-21 | Apple Inc. | Three layer stack structure |
| US9613931B2 (en) | 2015-04-30 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out stacked system in package (SIP) having dummy dies and methods of making the same |
| US9595494B2 (en) | 2015-05-04 | 2017-03-14 | Qualcomm Incorporated | Semiconductor package with high density die to die connection and method of making the same |
| US20160343685A1 (en) | 2015-05-21 | 2016-11-24 | Mediatek Inc. | Semiconductor package assembly and method for forming the same |
| US10032756B2 (en) | 2015-05-21 | 2018-07-24 | Mediatek Inc. | Semiconductor package assembly with facing active surfaces of first and second semiconductor die and method for forming the same |
| JP6468071B2 (ja) | 2015-05-25 | 2019-02-13 | 富士通株式会社 | 半導体装置及び電子装置並びに半導体装置の製造方法 |
| US10043769B2 (en) * | 2015-06-03 | 2018-08-07 | Micron Technology, Inc. | Semiconductor devices including dummy chips |
| KR101664411B1 (ko) | 2015-06-04 | 2016-10-14 | 주식회사 에스에프에이반도체 | 웨이퍼 레벨의 팬 아웃 패키지 제조방법 |
| US9741620B2 (en) | 2015-06-24 | 2017-08-22 | Invensas Corporation | Structures and methods for reliable packages |
| US9704827B2 (en) | 2015-06-25 | 2017-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bond pad structure |
| US9656852B2 (en) | 2015-07-06 | 2017-05-23 | Taiwan Semiconductor Manufacturing Company Ltd. | CMOS-MEMS device structure, bonding mesa structure and associated method |
| US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| US10352991B2 (en) | 2015-07-21 | 2019-07-16 | Fermi Research Alliance, Llc | Edgeless large area ASIC |
| US10075657B2 (en) | 2015-07-21 | 2018-09-11 | Fermi Research Alliance, Llc | Edgeless large area camera system |
| US9728521B2 (en) | 2015-07-23 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bond using a copper alloy for yield improvement |
| US9559081B1 (en) | 2015-08-21 | 2017-01-31 | Apple Inc. | Independent 3D stacking |
| US9953941B2 (en) | 2015-08-25 | 2018-04-24 | Invensas Bonding Technologies, Inc. | Conductive barrier direct hybrid bonding |
| US9768145B2 (en) | 2015-08-31 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming multi-die package structures including redistribution layers |
| US10049953B2 (en) | 2015-09-21 | 2018-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing an integrated fan-out package having fan-out redistribution layer (RDL) to accommodate electrical connectors |
| US9917072B2 (en) | 2015-09-21 | 2018-03-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing an integrated stacked package with a fan-out redistribution layer (RDL) and a same encapsulating process |
| US9754891B2 (en) | 2015-09-23 | 2017-09-05 | International Business Machines Corporation | Low-temperature diffusion doping of copper interconnects independent of seed layer composition |
| WO2017052652A1 (en) | 2015-09-25 | 2017-03-30 | Intel Corporation | Combination of semiconductor die with another die by hybrid bonding |
| US10032751B2 (en) | 2015-09-28 | 2018-07-24 | Invensas Corporation | Ultrathin layer for forming a capacitive interface between joined integrated circuit components |
| KR101787832B1 (ko) | 2015-10-22 | 2017-10-19 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 제조 방법 및 이를 이용한 반도체 패키지 |
| US10163856B2 (en) | 2015-10-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated circuit structure and method of forming |
| US9524959B1 (en) * | 2015-11-04 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | System on integrated chips and methods of forming same |
| US9711458B2 (en) | 2015-11-13 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method for chip package |
| FR3044167B1 (fr) | 2015-11-20 | 2018-01-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diodes electroluminescentes comportant au moins une diode zener |
| US9666560B1 (en) | 2015-11-25 | 2017-05-30 | Invensas Corporation | Multi-chip microelectronic assembly with built-up fine-patterned circuit structure |
| US9627365B1 (en) | 2015-11-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-layer CoWoS structure |
| US9496239B1 (en) | 2015-12-11 | 2016-11-15 | International Business Machines Corporation | Nitride-enriched oxide-to-oxide 3D wafer bonding |
| US9852988B2 (en) | 2015-12-18 | 2017-12-26 | Invensas Bonding Technologies, Inc. | Increased contact alignment tolerance for direct bonding |
| KR20170075125A (ko) | 2015-12-22 | 2017-07-03 | 에스케이하이닉스 주식회사 | 반도체 패키지 및 제조 방법 |
| US9881882B2 (en) | 2016-01-06 | 2018-01-30 | Mediatek Inc. | Semiconductor package with three-dimensional antenna |
| US20170200659A1 (en) | 2016-01-08 | 2017-07-13 | International Business Machines Corporation | Porous underfill enabling rework |
| US9923011B2 (en) | 2016-01-12 | 2018-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with stacked semiconductor dies |
| US10446532B2 (en) | 2016-01-13 | 2019-10-15 | Invensas Bonding Technologies, Inc. | Systems and methods for efficient transfer of semiconductor elements |
| JP2017130610A (ja) | 2016-01-22 | 2017-07-27 | ソニー株式会社 | イメージセンサ、製造方法、及び、電子機器 |
| US20170243845A1 (en) | 2016-02-19 | 2017-08-24 | Qualcomm Incorporated | Fan-out wafer-level packages with improved topology |
| US10050018B2 (en) | 2016-02-26 | 2018-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC structure and methods of forming |
| US10636767B2 (en) | 2016-02-29 | 2020-04-28 | Invensas Corporation | Correction die for wafer/die stack |
| US9831148B2 (en) | 2016-03-11 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out package including voltage regulators and methods forming same |
| JP6453796B2 (ja) | 2016-03-14 | 2019-01-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
| WO2017164810A1 (en) | 2016-03-21 | 2017-09-28 | Agency For Science, Technology And Research | Semiconductor package and method of forming the same |
| US10186468B2 (en) | 2016-03-31 | 2019-01-22 | Infineon Technologies Ag | System and method for a transducer in an eWLB package |
| EP3437133A4 (en) | 2016-04-01 | 2019-11-27 | INTEL Corporation | TECHNIQUES FOR STACKING MATRICES AND ASSOCIATED CONFIGURATIONS |
| TWI606563B (zh) | 2016-04-01 | 2017-11-21 | 力成科技股份有限公司 | 薄型晶片堆疊封裝構造及其製造方法 |
| US10002857B2 (en) | 2016-04-12 | 2018-06-19 | Qualcomm Incorporated | Package on package (PoP) device comprising thermal interface material (TIM) in cavity of an encapsulation layer |
| US10026716B2 (en) | 2016-04-15 | 2018-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC formation with dies bonded to formed RDLs |
| US9761559B1 (en) | 2016-04-21 | 2017-09-12 | Micron Technology, Inc. | Semiconductor package and fabrication method thereof |
| US20170330855A1 (en) | 2016-05-13 | 2017-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and Method for Immersion Bonding |
| US10204893B2 (en) | 2016-05-19 | 2019-02-12 | Invensas Bonding Technologies, Inc. | Stacked dies and methods for forming bonded structures |
| US10032722B2 (en) | 2016-05-31 | 2018-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package structure having am antenna pattern and manufacturing method thereof |
| US9972565B1 (en) | 2016-06-07 | 2018-05-15 | National Technology & Engineering Solutions Of Sandia, Llc | Lateral vias for connections to buried microconductors |
| KR102505856B1 (ko) | 2016-06-09 | 2023-03-03 | 삼성전자 주식회사 | 웨이퍼 대 웨이퍼 접합 구조체 |
| US9865566B1 (en) * | 2016-06-15 | 2018-01-09 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| KR102521881B1 (ko) | 2016-06-15 | 2023-04-18 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| US9818729B1 (en) | 2016-06-16 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-package structure and method |
| KR102538175B1 (ko) | 2016-06-20 | 2023-06-01 | 삼성전자주식회사 | 반도체 패키지 |
| US10431738B2 (en) | 2016-06-24 | 2019-10-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated fan-out package and method for fabricating the same |
| US9859254B1 (en) | 2016-06-30 | 2018-01-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and a manufacturing method thereof |
| US9941241B2 (en) | 2016-06-30 | 2018-04-10 | International Business Machines Corporation | Method for wafer-wafer bonding |
| KR102570582B1 (ko) | 2016-06-30 | 2023-08-24 | 삼성전자 주식회사 | 반도체 패키지 및 그 제조 방법 |
| US11355427B2 (en) | 2016-07-01 | 2022-06-07 | Intel Corporation | Device, method and system for providing recessed interconnect structures of a substrate |
| EP3479398B1 (en) | 2016-07-01 | 2025-02-19 | Intel Corporation | Molded embedded bridge for enhanced emib applications |
| US9966360B2 (en) | 2016-07-05 | 2018-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and manufacturing method thereof |
| US9892961B1 (en) | 2016-08-09 | 2018-02-13 | International Business Machines Corporation | Air gap spacer formation for nano-scale semiconductor devices |
| US10672741B2 (en) | 2016-08-18 | 2020-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages with thermal-electrical-mechanical chips and methods of forming the same |
| EP3288076B1 (en) | 2016-08-25 | 2021-06-23 | IMEC vzw | A semiconductor die package and method of producing the package |
| JP7048182B2 (ja) | 2016-08-26 | 2022-04-05 | インテル・コーポレーション | 集積回路のデバイス構造及び両面製造技術 |
| US10535632B2 (en) | 2016-09-02 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package structure and method of manufacturing the same |
| KR102649471B1 (ko) | 2016-09-05 | 2024-03-21 | 삼성전자주식회사 | 반도체 패키지 및 그의 제조 방법 |
| US9768133B1 (en) | 2016-09-22 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and method of forming the same |
| US11508662B2 (en) | 2016-09-30 | 2022-11-22 | Intel Corporation | Device and method of very high density routing used with embedded multi-die interconnect bridge |
| US10446487B2 (en) | 2016-09-30 | 2019-10-15 | Invensas Bonding Technologies, Inc. | Interface structures and methods for forming same |
| US10748864B2 (en) | 2016-10-05 | 2020-08-18 | Semiconductor Components Industries, Llc | Bonded semiconductor package and related methods |
| US10580735B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Stacked IC structure with system level wiring on multiple sides of the IC die |
| US10672663B2 (en) | 2016-10-07 | 2020-06-02 | Xcelsis Corporation | 3D chip sharing power circuit |
| US10607136B2 (en) | 2017-08-03 | 2020-03-31 | Xcelsis Corporation | Time borrowing between layers of a three dimensional chip stack |
| US10872852B2 (en) | 2016-10-12 | 2020-12-22 | Micron Technology, Inc. | Wafer level package utilizing molded interposer |
| US9722098B1 (en) | 2016-10-18 | 2017-08-01 | Ase Electronics (M) Sdn Bhd | Semiconductor device package and method of manufacturing the same |
| US10304801B2 (en) | 2016-10-31 | 2019-05-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Redistribution layers in semiconductor packages and methods of forming same |
| US20180130768A1 (en) | 2016-11-09 | 2018-05-10 | Unisem (M) Berhad | Substrate Based Fan-Out Wafer Level Packaging |
| US10153222B2 (en) * | 2016-11-14 | 2018-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structures and methods of forming the same |
| US10529690B2 (en) * | 2016-11-14 | 2020-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structures and methods of forming the same |
| US10177078B2 (en) | 2016-11-28 | 2019-01-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming chip package structure |
| US10163750B2 (en) | 2016-12-05 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure for heat dissipation |
| US10453832B2 (en) | 2016-12-15 | 2019-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Seal ring structures and methods of forming same |
| US10002844B1 (en) | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US20180182665A1 (en) | 2016-12-28 | 2018-06-28 | Invensas Bonding Technologies, Inc. | Processed Substrate |
| WO2018125673A2 (en) | 2016-12-28 | 2018-07-05 | Invensas Bonding Technologies, Inc | Processing stacked substrates |
| US20180190583A1 (en) | 2016-12-29 | 2018-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures with integrated passive component |
| TWI837879B (zh) | 2016-12-29 | 2024-04-01 | 美商艾德亞半導體接合科技有限公司 | 具有整合式被動構件的接合結構 |
| US10276909B2 (en) | 2016-12-30 | 2019-04-30 | Invensas Bonding Technologies, Inc. | Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein |
| US10431614B2 (en) | 2017-02-01 | 2019-10-01 | Semiconductor Components Industries, Llc | Edge seals for semiconductor packages |
| US9865567B1 (en) | 2017-02-02 | 2018-01-09 | Xilinx, Inc. | Heterogeneous integration of integrated circuit device and companion device |
| JP7030825B2 (ja) | 2017-02-09 | 2022-03-07 | インヴェンサス ボンディング テクノロジーズ インコーポレイテッド | 接合構造物 |
| US10629577B2 (en) | 2017-03-16 | 2020-04-21 | Invensas Corporation | Direct-bonded LED arrays and applications |
| US10515913B2 (en) | 2017-03-17 | 2019-12-24 | Invensas Bonding Technologies, Inc. | Multi-metal contact structure |
| US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
| JP6640780B2 (ja) | 2017-03-22 | 2020-02-05 | キオクシア株式会社 | 半導体装置の製造方法および半導体装置 |
| WO2018183739A1 (en) | 2017-03-31 | 2018-10-04 | Invensas Bonding Technologies, Inc. | Interface structures and methods for forming same |
| US10269756B2 (en) | 2017-04-21 | 2019-04-23 | Invensas Bonding Technologies, Inc. | Die processing |
| US10580823B2 (en) | 2017-05-03 | 2020-03-03 | United Microelectronics Corp. | Wafer level packaging method |
| US10879212B2 (en) | 2017-05-11 | 2020-12-29 | Invensas Bonding Technologies, Inc. | Processed stacked dies |
| US10446441B2 (en) | 2017-06-05 | 2019-10-15 | Invensas Corporation | Flat metal features for microelectronics applications |
| US10541228B2 (en) | 2017-06-15 | 2020-01-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packages formed using RDL-last process |
| US10217720B2 (en) | 2017-06-15 | 2019-02-26 | Invensas Corporation | Multi-chip modules formed using wafer-level processing of a reconstitute wafer |
| US10658335B2 (en) | 2017-06-16 | 2020-05-19 | Futurewei Technologies, Inc. | Heterogenous 3D chip stack for a mobile processor |
| US10483187B2 (en) * | 2017-06-30 | 2019-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat spreading device and method |
| US10304805B2 (en) | 2017-08-24 | 2019-05-28 | Micron Technology, Inc. | Dual sided fan-out package having low warpage across all temperatures |
| US10707145B2 (en) | 2017-09-08 | 2020-07-07 | Kemet Electronics Corporation | High density multi-component packages |
| CN111066246B (zh) | 2017-09-14 | 2023-08-22 | 京瓷株式会社 | 弹性波器件及通信装置 |
| US10468384B2 (en) | 2017-09-15 | 2019-11-05 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same |
| US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
| US11195748B2 (en) | 2017-09-27 | 2021-12-07 | Invensas Corporation | Interconnect structures and methods for forming same |
| EP3688798A4 (en) | 2017-09-29 | 2021-05-19 | INTEL Corporation | SEMI-CONDUCTOR ENCLOSURE WITH EMBEDDED CONNECTIONS |
| US10332899B2 (en) | 2017-09-29 | 2019-06-25 | Intel Corporation | 3D package having edge-aligned die stack with direct inter-die wire connections |
| US11031285B2 (en) | 2017-10-06 | 2021-06-08 | Invensas Bonding Technologies, Inc. | Diffusion barrier collar for interconnects |
| US10818624B2 (en) | 2017-10-24 | 2020-10-27 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for manufacturing the same |
| US11251157B2 (en) | 2017-11-01 | 2022-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Die stack structure with hybrid bonding structure and method of fabricating the same and package |
| US10672820B2 (en) | 2017-11-23 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bonded structure |
| US10483156B2 (en) | 2017-11-29 | 2019-11-19 | International Business Machines Corporation | Non-embedded silicon bridge chip for multi-chip module |
| US11011503B2 (en) | 2017-12-15 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Direct-bonded optoelectronic interconnect for high-density integrated photonics |
| US10312221B1 (en) | 2017-12-17 | 2019-06-04 | Advanced Micro Devices, Inc. | Stacked dies and dummy components for improved thermal performance |
| US10923408B2 (en) | 2017-12-22 | 2021-02-16 | Invensas Bonding Technologies, Inc. | Cavity packages |
| US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
| TWI643307B (zh) | 2018-01-30 | 2018-12-01 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
| US10559507B1 (en) | 2018-02-06 | 2020-02-11 | Facebook Technologies, Llc | Direct wafer mapping and selective elastomer deposition |
| US11127738B2 (en) | 2018-02-09 | 2021-09-21 | Xcelsis Corporation | Back biasing of FD-SOI circuit blocks |
| US10727219B2 (en) | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
| US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
| US10847478B2 (en) | 2018-02-27 | 2020-11-24 | Amkor Technology Singapore Holding Pte. Ltd. | Method of forming an electronic device structure having an electronic component with an on-edge orientation and related structures |
| US11256004B2 (en) | 2018-03-20 | 2022-02-22 | Invensas Bonding Technologies, Inc. | Direct-bonded lamination for improved image clarity in optical devices |
| US10991804B2 (en) | 2018-03-29 | 2021-04-27 | Xcelsis Corporation | Transistor level interconnection methodologies utilizing 3D interconnects |
| US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
| US10790262B2 (en) | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
| US10964664B2 (en) | 2018-04-20 | 2021-03-30 | Invensas Bonding Technologies, Inc. | DBI to Si bonding for simplified handle wafer |
| US11398258B2 (en) | 2018-04-30 | 2022-07-26 | Invensas Llc | Multi-die module with low power operation |
| US10937743B2 (en) | 2018-04-30 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mixing organic materials into hybrid packages |
| US10825772B2 (en) | 2018-04-30 | 2020-11-03 | Xilinx, Inc. | Redundancy scheme for multi-chip stacked devices |
| US10403577B1 (en) | 2018-05-03 | 2019-09-03 | Invensas Corporation | Dielets on flexible and stretchable packaging for microelectronics |
| US11469138B2 (en) | 2018-05-04 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for coupling attached component upper electrode to substrate |
| US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11276676B2 (en) | 2018-05-15 | 2022-03-15 | Invensas Bonding Technologies, Inc. | Stacked devices and methods of fabrication |
| US10510629B2 (en) * | 2018-05-18 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package and method of forming same |
| US10727204B2 (en) | 2018-05-29 | 2020-07-28 | Advances Micro Devices, Inc. | Die stacking for multi-tier 3D integration |
| US10923413B2 (en) | 2018-05-30 | 2021-02-16 | Xcelsis Corporation | Hard IP blocks with physically bidirectional passageways |
| US11171117B2 (en) | 2018-06-12 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Interlayer connection of stacked microelectronic components |
| WO2019241417A1 (en) | 2018-06-13 | 2019-12-19 | Invensas Bonding Technologies, Inc. | Tsv as pad |
| US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
| US10685937B2 (en) | 2018-06-15 | 2020-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package having dummy structures and method of forming same |
| US10910344B2 (en) | 2018-06-22 | 2021-02-02 | Xcelsis Corporation | Systems and methods for releveled bump planes for chiplets |
| US10333623B1 (en) | 2018-06-25 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical transceiver |
| US10930633B2 (en) | 2018-06-29 | 2021-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Buffer design for package integration |
| US11664357B2 (en) | 2018-07-03 | 2023-05-30 | Adeia Semiconductor Bonding Technologies Inc. | Techniques for joining dissimilar materials in microelectronics |
| WO2020010136A1 (en) | 2018-07-06 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Molded direct bonded and interconnected stack |
| WO2020010265A1 (en) | 2018-07-06 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Microelectronic assemblies |
| US12406959B2 (en) | 2018-07-26 | 2025-09-02 | Adeia Semiconductor Bonding Technologies Inc. | Post CMP processing for hybrid bonding |
| KR102560697B1 (ko) | 2018-07-31 | 2023-07-27 | 삼성전자주식회사 | 인터포저를 가지는 반도체 패키지 |
| US10700094B2 (en) | 2018-08-08 | 2020-06-30 | Xcelsis Corporation | Device disaggregation for improved performance |
| US10727205B2 (en) | 2018-08-15 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bonding technology for stacking integrated circuits |
| US11515291B2 (en) | 2018-08-28 | 2022-11-29 | Adeia Semiconductor Inc. | Integrated voltage regulator and passive components |
| US11296044B2 (en) | 2018-08-29 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes |
| US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
| US10797031B2 (en) | 2018-09-20 | 2020-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package |
| US10504824B1 (en) | 2018-09-21 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit package and method |
| US10868353B2 (en) | 2018-09-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electronic device and manufacturing method thereof |
| US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
| KR20200047845A (ko) | 2018-10-24 | 2020-05-08 | 삼성전자주식회사 | 반도체 패키지 |
| KR102596758B1 (ko) * | 2018-10-24 | 2023-11-03 | 삼성전자주식회사 | 반도체 패키지 |
| US10861808B2 (en) * | 2018-11-21 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding structure of dies with dangling bonds |
| US11158607B2 (en) | 2018-11-29 | 2021-10-26 | Apple Inc. | Wafer reconstitution and die-stitching |
| US10867978B2 (en) | 2018-12-11 | 2020-12-15 | Advanced Micro Devices, Inc. | Integrated circuit module with integrated discrete devices |
| US11244920B2 (en) | 2018-12-18 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Method and structures for low temperature device bonding |
| KR20210104742A (ko) | 2019-01-14 | 2021-08-25 | 인벤사스 본딩 테크놀로지스 인코포레이티드 | 접합 구조체 |
| KR102803426B1 (ko) | 2019-01-24 | 2025-05-07 | 삼성전기주식회사 | 브리지 내장 인터포저, 및 이를 포함하는 패키지 기판 및 반도체 패키지 |
| US11387202B2 (en) | 2019-03-01 | 2022-07-12 | Invensas Llc | Nanowire bonding interconnect for fine-pitch microelectronics |
| US11901281B2 (en) | 2019-03-11 | 2024-02-13 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures with integrated passive component |
| US11552019B2 (en) | 2019-03-12 | 2023-01-10 | Intel Corporation | Substrate patch reconstitution options |
| US10770430B1 (en) | 2019-03-22 | 2020-09-08 | Xilinx, Inc. | Package integration for memory devices |
| US10854578B2 (en) | 2019-03-29 | 2020-12-01 | Invensas Corporation | Diffused bitline replacement in stacked wafer memory |
| US11205625B2 (en) | 2019-04-12 | 2021-12-21 | Invensas Bonding Technologies, Inc. | Wafer-level bonding of obstructive elements |
| US11610846B2 (en) | 2019-04-12 | 2023-03-21 | Adeia Semiconductor Bonding Technologies Inc. | Protective elements for bonded structures including an obstructive element |
| US11373963B2 (en) | 2019-04-12 | 2022-06-28 | Invensas Bonding Technologies, Inc. | Protective elements for bonded structures |
| US11355404B2 (en) | 2019-04-22 | 2022-06-07 | Invensas Bonding Technologies, Inc. | Mitigating surface damage of probe pads in preparation for direct bonding of a substrate |
| US11385278B2 (en) | 2019-05-23 | 2022-07-12 | Invensas Bonding Technologies, Inc. | Security circuitry for bonded structures |
| US12374641B2 (en) | 2019-06-12 | 2025-07-29 | Adeia Semiconductor Bonding Technologies Inc. | Sealed bonded structures and methods for forming the same |
| US12341129B2 (en) | 2019-06-13 | 2025-06-24 | Intel Corporation | Substrateless double-sided embedded multi-die interconnect bridge |
| US11145623B2 (en) | 2019-06-14 | 2021-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit packages and methods of forming the same |
| US11296053B2 (en) | 2019-06-26 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Direct bonded stack structures for increased reliability and improved yield in microelectronics |
| US20210020577A1 (en) | 2019-07-16 | 2021-01-21 | Dyi-chung Hu | Semiconductor package and manufacturing method thereof |
| US11978685B2 (en) | 2019-07-25 | 2024-05-07 | Intel Corporation | Glass core patch with in situ fabricated fan-out layer to enable die tiling applications |
| US11742301B2 (en) | 2019-08-19 | 2023-08-29 | Advanced Micro Devices, Inc. | Fan-out package with reinforcing rivets |
| US11094635B2 (en) | 2019-08-22 | 2021-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method for forming the same |
| US11094613B2 (en) | 2019-08-22 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
| US11508677B2 (en) | 2019-08-29 | 2022-11-22 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package for high-speed data transmission and manufacturing method thereof |
| US11133263B2 (en) | 2019-09-17 | 2021-09-28 | Intel Corporation | High-density interconnects for integrated circuit packages |
| US10998272B2 (en) | 2019-09-17 | 2021-05-04 | Intel Corporation | Organic interposers for integrated circuit packages |
| WO2021061246A1 (en) | 2019-09-25 | 2021-04-01 | Intel Corporation | Molded interconnects in bridges for integrated-circuit packages |
| US11183477B2 (en) | 2019-09-26 | 2021-11-23 | Intel Corporation | Mixed hybrid bonding structures and methods of forming the same |
| US12080672B2 (en) | 2019-09-26 | 2024-09-03 | Adeia Semiconductor Bonding Technologies Inc. | Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive |
| US11824040B2 (en) | 2019-09-27 | 2023-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package component, electronic device and manufacturing method thereof |
| TWI734455B (zh) | 2019-10-09 | 2021-07-21 | 財團法人工業技術研究院 | 多晶片封裝件及其製造方法 |
| US12113054B2 (en) | 2019-10-21 | 2024-10-08 | Adeia Semiconductor Technologies Llc | Non-volatile dynamic random access memory |
| US20210125965A1 (en) | 2019-10-24 | 2021-04-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| US11688693B2 (en) | 2019-10-29 | 2023-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor packages and method of manufacture |
| US11164817B2 (en) | 2019-11-01 | 2021-11-02 | International Business Machines Corporation | Multi-chip package structures with discrete redistribution layers |
| US11862602B2 (en) | 2019-11-07 | 2024-01-02 | Adeia Semiconductor Technologies Llc | Scalable architecture for reduced cycles across SOC |
| US11762200B2 (en) | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
| US11876076B2 (en) | 2019-12-20 | 2024-01-16 | Adeia Semiconductor Technologies Llc | Apparatus for non-volatile random access memory stacks |
| US11721653B2 (en) | 2019-12-23 | 2023-08-08 | Adeia Semiconductor Bonding Technologies Inc. | Circuitry for electrical redundancy in bonded structures |
| CN121793755A (zh) | 2019-12-23 | 2026-04-03 | 隔热半导体粘合技术公司 | 用于接合结构的电冗余 |
| US11791275B2 (en) | 2019-12-27 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing |
| US11616026B2 (en) | 2020-01-17 | 2023-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| US11600526B2 (en) | 2020-01-22 | 2023-03-07 | iCometrue Company Ltd. | Chip package based on through-silicon-via connector and silicon interconnection bridge |
| US20210242152A1 (en) | 2020-02-05 | 2021-08-05 | Invensas Bonding Technologies, Inc. | Selective alteration of interconnect pads for direct bonding |
| TW202135243A (zh) | 2020-03-04 | 2021-09-16 | 力成科技股份有限公司 | 扇出型堆疊式半導體封裝結構之多層模封方法 |
| US20210280507A1 (en) | 2020-03-05 | 2021-09-09 | Qualcomm Incorporated | Package comprising dummy interconnects |
| CN115943489A (zh) | 2020-03-19 | 2023-04-07 | 隔热半导体粘合技术公司 | 用于直接键合结构的尺寸补偿控制 |
| US11742314B2 (en) | 2020-03-31 | 2023-08-29 | Adeia Semiconductor Bonding Technologies Inc. | Reliable hybrid bonded apparatus |
| US11515229B2 (en) | 2020-03-31 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and manufacturing method thereof |
| US11594498B2 (en) | 2020-04-27 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and method |
| US11735523B2 (en) | 2020-05-19 | 2023-08-22 | Adeia Semiconductor Bonding Technologies Inc. | Laterally unconfined structure |
| US11508633B2 (en) | 2020-05-28 | 2022-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure having taper-shaped conductive pillar and method of forming thereof |
| TWI732568B (zh) | 2020-05-28 | 2021-07-01 | 欣興電子股份有限公司 | 內埋元件的基板結構及其製造方法 |
| US11562963B2 (en) | 2020-06-05 | 2023-01-24 | Intel Corporation | Stacked semiconductor package and method of forming the same |
| US11955431B2 (en) | 2020-06-05 | 2024-04-09 | Intel Corporation | Interposer structures and methods for 2.5D and 3D packaging |
| US11335650B2 (en) | 2020-06-11 | 2022-05-17 | Advanced Semiconductor Engineering, Inc. | Package substrate, electronic device package and method for manufacturing the same |
| US11239184B2 (en) | 2020-06-11 | 2022-02-01 | Advanced Semicondutor Engineering, Inc. | Package substrate, electronic device package and method for manufacturing the same |
| US11342272B2 (en) | 2020-06-11 | 2022-05-24 | Advanced Semiconductor Engineering, Inc. | Substrate structures, and methods for forming the same and semiconductor package structures |
| US11450615B2 (en) | 2020-06-12 | 2022-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of fabricating the same |
| US11631647B2 (en) | 2020-06-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Integrated device packages with integrated device die and dummy element |
| US11574890B2 (en) | 2020-07-01 | 2023-02-07 | Amkor Technology Singapore Holding Pte. Lte. | Semiconductor devices and methods of manufacturing semiconductor devices |
| US11764177B2 (en) | 2020-09-04 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structure with interconnect structure |
| US11728273B2 (en) | 2020-09-04 | 2023-08-15 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structure with interconnect structure |
| US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
| KR20230097121A (ko) | 2020-10-29 | 2023-06-30 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 직접 접합 방법 및 구조체 |
| CN116635998A (zh) | 2020-10-29 | 2023-08-22 | 美商艾德亚半导体接合科技有限公司 | 直接键合方法和结构 |
| WO2022147430A1 (en) | 2020-12-28 | 2022-07-07 | Invensas Bonding Technologies, Inc. | Structures with through-substrate vias and methods for forming the same |
| US12456662B2 (en) | 2020-12-28 | 2025-10-28 | Adeia Semiconductor Bonding Technologies Inc. | Structures with through-substrate vias and methods for forming the same |
| CN116848631A (zh) | 2020-12-30 | 2023-10-03 | 美商艾德亚半导体接合科技有限公司 | 具有导电特征的结构及其形成方法 |
| US20220208723A1 (en) | 2020-12-30 | 2022-06-30 | Invensas Bonding Technologies, Inc. | Directly bonded structures |
| KR20230153446A (ko) | 2021-03-03 | 2023-11-06 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 직접 결합을 위한 접촉 구조 |
| US12525572B2 (en) | 2021-03-31 | 2026-01-13 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding and debonding of carrier |
| EP4315411A4 (en) | 2021-03-31 | 2025-04-30 | Adeia Semiconductor Bonding Technologies Inc. | DIRECT BINDING METHODS AND STRUCTURES |
| JP2024515032A (ja) | 2021-03-31 | 2024-04-04 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | 担体の直接接合及び剥離 |
| KR20240028356A (ko) | 2021-06-30 | 2024-03-05 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 결합층에서 라우팅 구조체를 갖는 소자 |
| KR20240036032A (ko) | 2021-07-16 | 2024-03-19 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 접합된 구조물의 광학적 차단 보호 요소 |
| JP2024528964A (ja) | 2021-08-02 | 2024-08-01 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ボンデッド構造体用の保護半導体素子 |
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| US20230067677A1 (en) | 2021-09-01 | 2023-03-02 | Invensas Bonding Technologies, Inc. | Sequences and equipment for direct bonding |
| WO2023044308A1 (en) | 2021-09-14 | 2023-03-23 | Adeia Semiconductor Bonding Technologies Inc. | Method of bonding thin substrates |
| KR20240059637A (ko) | 2021-09-24 | 2024-05-07 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 능동 인터포저를 가진 결합 구조체 |
| JP2024538179A (ja) | 2021-10-18 | 2024-10-18 | アデイア セミコンダクター テクノロジーズ リミテッド ライアビリティ カンパニー | 結合構造における寄生容量の低減 |
| KR20240090512A (ko) | 2021-10-19 | 2024-06-21 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 멀티-다이 스태킹에서의 적층된 인덕터 |
| EP4420197A4 (en) | 2021-10-22 | 2025-09-10 | Adeia Semiconductor Tech Llc | RADIO FREQUENCY DEVICE HOUSINGS |
| JP2024541923A (ja) | 2021-10-25 | 2024-11-13 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | 積層化電子デバイス用の電力分配 |
| US20230125395A1 (en) | 2021-10-27 | 2023-04-27 | Adeia Semiconductor Bonding Technologies Inc. | Stacked structures with capacitive coupling connections |
| US12563749B2 (en) | 2021-10-28 | 2026-02-24 | Adeia Semiconductor Bonding Technologies Inc | Stacked electronic devices |
| US12604771B2 (en) | 2021-10-28 | 2026-04-14 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding methods and structures |
| EP4423806A4 (en) | 2021-10-28 | 2025-09-24 | Adeia Semiconductor Bonding Technologies Inc | DIFFUSION BARRIERS AND ASSOCIATED FORMATION METHOD |
| JP2024537478A (ja) | 2021-11-05 | 2024-10-10 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | マルチチャンネル型デバイス積層化 |
| US20230154816A1 (en) | 2021-11-17 | 2023-05-18 | Adeia Semiconductor Bonding Technologies Inc. | Thermal bypass for stacked dies |
| US20230154828A1 (en) | 2021-11-18 | 2023-05-18 | Adeia Semiconductor Bonding Technologies Inc. | Fluid cooling for die stacks |
| US12557615B2 (en) | 2021-12-13 | 2026-02-17 | Adeia Semiconductor Technologies Llc | Methods for bonding semiconductor elements |
| WO2023114726A1 (en) | 2021-12-13 | 2023-06-22 | Adeia Semiconductor Bonding Technologies Inc. | Interconnect structures |
| US20230197453A1 (en) | 2021-12-17 | 2023-06-22 | Adeia Semiconductor Bonding Technologies Inc. | Structure with conductive feature for direct bonding and method of forming same |
| WO2023122510A1 (en) | 2021-12-20 | 2023-06-29 | Adeia Semiconductor Bonding Technologies Inc. | Thermoelectric cooling in microelectronics |
| JP2025500315A (ja) | 2021-12-20 | 2025-01-09 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ダイパッケージの熱電冷却 |
| EP4454005A4 (en) | 2021-12-20 | 2026-05-06 | Adeia Semiconductor Bonding Technologies Inc | Direct bonding and debonding of elements |
| JP2024545315A (ja) | 2021-12-22 | 2024-12-05 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | 低応力直接ハイブリッド接合 |
| EP4454008A4 (en) | 2021-12-23 | 2025-11-05 | Adeia Semiconductor Bonding Technologies Inc | DIRECT CONNECTION TO ENCLOSURE SUBSTRATES |
| EP4454013A4 (en) | 2021-12-23 | 2025-07-30 | Adeia Semiconductor Bonding Technologies Inc | LINKED STRUCTURES COMPRISING INTERCONNECTING ASSEMBLIES |
| CN118613905A (zh) | 2021-12-23 | 2024-09-06 | 美商艾德亚半导体接合科技有限公司 | 用于管芯键合控制的装置和方法 |
| US20230207402A1 (en) | 2021-12-27 | 2023-06-29 | Adeia Semiconductor Bonding Technologies Inc. | Directly bonded frame wafers |
| WO2023147502A1 (en) | 2022-01-31 | 2023-08-03 | Adeia Semiconductor Bonding Technologies Inc. | Heat dissipating system for electronic devices |
| KR20240156613A (ko) | 2022-02-24 | 2024-10-30 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 결합 구조체 |
| US20230299029A1 (en) | 2022-03-16 | 2023-09-21 | Adeia Semiconductor Bonding Technologies Inc. | Expansion control for bonding |
| US12512425B2 (en) | 2022-04-25 | 2025-12-30 | Adeia Semiconductor Bonding Technologies Inc. | Expansion controlled structure for direct bonding and method of forming same |
| WO2023215598A1 (en) | 2022-05-05 | 2023-11-09 | Adeia Semiconductor Bonding Technologies Inc. | Low temperature direct bonding |
| US20230360950A1 (en) | 2022-05-05 | 2023-11-09 | Adeia Semiconductor Bonding Technologies Inc. | Gang-flipping of dies prior to bonding |
| US20230369136A1 (en) | 2022-05-13 | 2023-11-16 | Adeia Semiconductor Bonding Technologies Inc. | Bonding surface validation on dicing tape |
| JP2025517291A (ja) | 2022-05-23 | 2025-06-05 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | ボンデッド構造体のための試験用素子 |
| US20240038702A1 (en) | 2022-07-27 | 2024-02-01 | Adeia Semiconductor Bonding Technologies Inc. | High-performance hybrid bonded interconnect systems |
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