JP2011128140A - センサデバイス及びその製造方法 - Google Patents
センサデバイス及びその製造方法 Download PDFInfo
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- JP2011128140A JP2011128140A JP2010224332A JP2010224332A JP2011128140A JP 2011128140 A JP2011128140 A JP 2011128140A JP 2010224332 A JP2010224332 A JP 2010224332A JP 2010224332 A JP2010224332 A JP 2010224332A JP 2011128140 A JP2011128140 A JP 2011128140A
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Abstract
【手段】本発明のセンサデバイスは、有機材料を含み、配線を有する基板と、基板上に配置されて、配線と電気的に接続されたセンサと、基板上に配置されて、且つセンサを覆う有機材料を含むパッケージキャップと、を具備し、パッケージキャップの内側は中空であることを特徴とする。
【選択図】図1A
Description
図1A及び図1Bは、本発明の実施形態1に係るセンサデバイスの全体構成を示す断面図である。本実施形態では、加速度センサと共に制御ICをパッケージ化する場合を説明するが、本発明はこれに限定されず、センサのみがパッケージ化されてもよい。図1Aは平坦な基板(以下、通常基板という)を使用した場合の加速度センサデバイス100の断面図であり、図1Bは使用する基板を予め削ってセンサと制御ICの一部または全体を収納する凹形状の空間を形成した基板(以下、キャビティ基板という)を使用した場合の加速度センサデバイス100’の断面図である。
図1Bに示したキャビティ基板を使用した加速度センサデバイス100’の製造方法について、図2乃至図5を参照して説明する。図2乃至図5において、図1Bに示したキャビティ基板を使用した場合の加速度センサデバイス100’と同一又は類似の構成要素には同一の参照番号を付与し、重複する説明は省略する。ここでは、加速度センサ107と共に制御IC106をパッケージ化する場合を説明するが、本発明はこれに限定されず、センサのみがパッケージ化されてもよい。
次に、本発明の実施形態2に係る加速度センサデバイスを図6A及び図6Bを参照して説明する。本実施形態では、加速度センサと共に制御ICをパッケージ化する場合を説明するが、本発明はこれに限定されず、センサのみがパッケージ化されてもよい。図6A及び図6Bは、本発明の実施形態2に係る加速度センサデバイスの全体構成を示す断面図である。図6Aは通常基板を使用した場合のフリップチップ(Flip Chip)実装の加速度センサデバイス600の断面図であり、図6Bは使用する基板を予め削ってセンサと制御ICの一部または全体を収納する凹形状の空間を形成したキャビティ基板を使用した場合のフリップチップ実装の加速度センサデバイス600’の断面図である。
次に、本実施形態3に係る加速度センサデバイスを図12乃至図14を参照して説明する。本実施形態では、加速度センサと共に制御ICをパッケージ化する場合を説明するが、本発明はこれに限定されず、センサのみがパッケージ化されてもよい。本実施形態3に係る加速度センサデバイスは、実施形態1に係るキャビティ基板を使用した加速度センサデバイス100’の第1基板を除いては、実施形態1に係る加速度センサデバイス100’と同様の構成を有している。そのため、図1Bに示した加速度センサデバイス100’と同様の構成要素又は類似の構成要素には同一の参照番号を付与し、重複する説明は省略する。
上述の実施形態1乃至実施形態3では、基板上に制御IC及びセンサを積層した構造を説明したが、本発明の加速度センサデバイスの全体構成は実施形態1乃至実施形態2で述べた構成に限定されない。図8A及び図8Bは、本発明の実施形態4に係る加速度センサデバイスの全体構成の他の例を示す断面図である。図8Aは、図1Aに記載の通常基板を使用して、制御IC106とセンサ107とを基板101上に並べて配置した場合の加速度センサデバイス800の断面図である。図8Bは、図1Bに記載のキャビティ基板を使用して、制御IC106とセンサ107とを基板101’上に並べて配置した場合の加速度センサデバイス800’断面図である。図8A及び図8Bに示すように、基板上101または101’上に制御IC106とセンサ107とを並べて配置し、必要な配線などを行い、パッケージキャップ113によって覆い、パッケージ化してもよい。この場合、図示するように制御IC106とセンサ107とは同じパッケージキャップ113により覆われてもよく、図示していないが、別々のパッケージキャップにより覆われてもよい。パッケージキャップ113は、実施形態1及び実施形態2と同様に基板101又は101’の熱膨張係数の値と近い又はほぼ同一の熱膨張係数の値を有する有機材料を含み、センサデバイスの内側は中空状態である。
105、605 貫通電極
106、606 制御IC
107、607 センサ
112、612 センサ上部キャップ
113、613 パッケージキャップ
614 バンプ
Claims (24)
- 有機材料を含み、配線を有する基板と、
前記基板上に配置されて、前記配線と電気的に接続されたセンサと、
前記基板上に配置されて、且つ前記センサを覆う有機材料を含むパッケージキャップと、
を具備し、
前記パッケージキャップの内側は中空であることを特徴とするセンサデバイス。 - 前記基板は、凹部を含み、
前記センサの一部または全体は、前記凹部内に収納されていることを特徴とする請求項1に記載のセンサデバイス。 - 前記基板上に配置されたICをさらに具備し、
前記センサは、前記IC上に配置されることを特徴とする請求項1又は請求項2に記載されたセンサデバイス。 - 前記ICと前記センサとを電気的に接続するバンプをさらに具備することを特徴とする請求項3に記載のセンサデバイス。
- 前記基板上に配置されたICをさらに具備し、
前記センサと前記ICとは、前記基板上に並んで配置されることを特徴とする請求項1又は請求項2に記載のセンサデバイス。 - 前記ICは、前記センサと共に前記パッケージキャップに覆われることを特徴とする請求項5に記載のセンサデバイス。
- 前記ICを覆う、有機材料を含むパッケージキャップをさらに含むことを特徴とする請求項5に記載のセンサデバイス。
- 前記基板の熱膨張係数の値と前記パッケージキャップの熱膨張係数の値とは略等しいことを特徴とする請求項1乃至請求項7のいずれかに記載のセンサデバイス。
- 前記センサは、外力に応じて変位する変位部を有することを特徴とする請求項1乃至請求項8のいずれかに記載のセンサデバイス。
- 前記センサは、外力に応じて変位する錘部と前記錘部の変位に応じて撓む可撓部とを有する力学量センサであることを特徴とする請求項1乃至請求項8のいずれかに記載のセンサデバイス。
- 有機材料を含み、配線を有する基板上にセンサを配置し、
前記配線と前記センサとを電気的に接続し、
有機材料を含むパッケージキャップを前記基板上に配置して前記センサを覆って封止すること
を含むセンサデバイスの製造方法。 - 前記基板は、凹部を含み、
前記センサの一部または全体は、前記凹部内に収納されることを特徴とする請求項11に記載のセンサデバイスの製造方法。 - 前記センサと前記パッケージキャップとの間が中空であることを特徴とする請求項11又は請求項12に記載のセンサデバイスの製造方法。
- 前記基板上にICをさらに配置し、
前記センサは、前記IC上に配置されることを特徴とする請求項11又は請求項12のいずれかに記載のセンサデバイスの製造方法。 - 前記センサは、前記ICとバンプを介して電気的に接続されることを特徴とする請求項14に記載のセンサデバイスの製造方法。
- 有機材料を含み、配線を有する基板上に複数のセンサを配置し、
前記配線と前記複数のセンサとをそれぞれ電気的に接続し、
有機材料を含む複数のパッケージキャップを前記複数のセンサを覆うように前記基板上に一括で配置して封止し、
前記複数のパッケージキャップで覆われた前記複数のセンサをそれぞれ個片化すること、
を含むセンサデバイスの製造方法。 - 前記基板は、複数の凹部を含み、
前記複数のセンサの各々の一部または全体は、前記凹部内にそれぞれ収納されることを特徴とする請求項16に記載のセンサデバイスの製造方法。 - 前記複数のセンサと前記複数のパッケージキャップとの間が中空であることを特徴とする請求項16又は請求項17に記載のセンサデバイスの製造方法。
- 複数のICを前記基板上に配置し、
前記複数のセンサは、前記複数のIC上にそれぞれ配置されることを特徴とする請求項16又は請求項17に記載のセンサデバイスの製造方法。 - 前記複数のセンサと前記複数のICとは、バンプを介してそれぞれ電気的に接続されることを特徴とする請求項19に記載のセンサデバイスの製造方法。
- 有機材料を含み、配線を有する基板と、
前記基板上に配置されて、前記配線に接続された請求項1乃至請求項10のいずれか一項に記載されたセンサデバイスと、
を含む半導体装置。 - 凹部又は開口を有する基板と、
前記基板の凹部又は開口に配置された金属基板と、
前記金属基板上に配置されたICと、
前記IC上に配置され、前記ICと電気的に接続されたセンサと、
前記基板上に配置されて、且つ前記センサを覆うパッケージキャップと、
を具備し、
前記パッケージキャップの内側は中空であることを特徴とするセンサデバイス。 - 前記金属基板は、銅を含むことを特徴とする請求項22に記載のセンサデバイス。
- 前記ICは、前記金属基板と接着剤を介して配置されていることを特徴とする請求項22に記載のセンサデバイス。
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US9476898B2 (en) | 2016-10-25 |
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