JPH09297054A - Photo detector - Google Patents

Photo detector

Info

Publication number
JPH09297054A
JPH09297054A JP8112489A JP11248996A JPH09297054A JP H09297054 A JPH09297054 A JP H09297054A JP 8112489 A JP8112489 A JP 8112489A JP 11248996 A JP11248996 A JP 11248996A JP H09297054 A JPH09297054 A JP H09297054A
Authority
JP
Japan
Prior art keywords
incident light
optical semiconductor
photodetector
wavelength
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8112489A
Other languages
English (en)
Inventor
Maki Shimoyama
真樹 下山
Original Assignee
Matsushita Electric Ind Co Ltd
松下電器産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd, 松下電器産業株式会社 filed Critical Matsushita Electric Ind Co Ltd
Priority to JP8112489A priority Critical patent/JPH09297054A/ja
Publication of JPH09297054A publication Critical patent/JPH09297054A/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • G01J1/0407Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/0204Compact construction
    • G01J1/0209Monolithic
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • G01J1/0488Optical or mechanical part supplementary adjustable parts with spectral filtering

Abstract

(57)【要約】 【課題】 複数センサ機能の光検出器を光半導体素子自
体の分光感度特性を変えずに安価な手段によって得る。 【解決手段】 入射光窓部8を有するキャップ7で光半
導体素子2を覆い、入射光窓部8を透過して光半導体素
子2への入射光量を検出する光検出器において、入射光
窓部8は入射光の波長の内の所定領域の波長の透過光量
を制御する材料で構成し、入射光窓部8の透過光によっ
て光半導体素子2の光電流出力値を制御することによ
り、光半導体素子2一個で複数センサの機能を兼ねるよ
うに構成する。
(57) Abstract: A photodetector having a plurality of sensor functions is obtained by inexpensive means without changing the spectral sensitivity characteristics of the optical semiconductor element itself. In a photodetector that covers an optical semiconductor element (2) with a cap (7) having an incident light window section (8) and detects the amount of incident light on the optical semiconductor element (2) through the incident light window section (8), the incident light window section is provided. 8 is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region within the wavelength of incident light, and the photocurrent output value of the optical semiconductor element 2 is controlled by the transmitted light of the incident light window portion 8. It is configured such that one element 2 also has the functions of a plurality of sensors.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、各種機器の動作を
制御したり、環境測定のために用いる可視光センサや赤
外線センサ等に用いられる光検出器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photodetector used for a visible light sensor, an infrared sensor or the like used for controlling the operation of various devices and measuring the environment.

【0002】[0002]

【従来の技術】従来のこの種の光検出器には、特開昭5
2−42390号公報または特開平6−122461号
公報で示されているように、図14に示すリード足10
1を具備したセラミックケース102内のエポキシ系樹
脂部103に所要の染料104を添加することによっ
て、半導体受光素子105の分光感度の最大値を、図1
5に示す、波長650nmから570nmに移し、最大
視感度波長に近づけるようにしたものとか、光の透過率
の異なるプレート(図示せず)を複数個作製し、光半導
体素子の分光感度特性のばらつき値に応じて前記プレー
トと組合わせることにより、光電流出力値のばらつきの
小さい光検出器を得るようにしたものがある。 また、
この他には、単に入射光量を光半導体素子の波長感度範
囲全体で検知し、その光量を検出するものとか、光半導
体素子の可視光の分光感度範囲またはある波長の分光感
度範囲をカットした光量を検出するものがある。すなわ
ち、たとえば、自動車等においては、空調制御に用いら
れる日射センサは、日射の熱エネルギーの変化を計るた
め、図12の分光感度特性をもつ400nm〜1200
nmの波長感度範囲の半導体素子を用いているが入射窓
部のガラスにおいて、可視光カット剤により400nm
〜700nmの波長範囲の光をカットして700nm〜
1200nmの日射量を検知して、その信号をオートエ
アコンの制御アンプに送り、また、オートライト制御装
置に用いられるライトセンサは、周囲の明るさの変化を
計るため図13の分光感度特性をもつ400nm〜12
00nmの波長感度範囲の光半導体素子で、400nm
〜1200nmの光量を検知して、その信号をライト制
御アンプに送る構成であり、エアコン分野とライト分野
で別々に2個のセンサを用いている。なお、オートライ
ト制御装置とは、人の感じる周囲の明るさに応じて、暗
くなると自動的に車輌のライトを自動的に灯し、明るく
なれば自動的にライトを消す装置のことである。
2. Description of the Related Art A conventional photodetector of this type is disclosed in Japanese Patent Laid-Open No.
As shown in JP-A-2-42390 or JP-A-6-122461, the lead foot 10 shown in FIG.
1 by adding a required dye 104 to the epoxy resin portion 103 in the ceramic case 102 having the structure shown in FIG.
As shown in FIG. 5, the wavelength is shifted from 650 nm to 570 nm so as to be close to the maximum luminosity wavelength, or a plurality of plates (not shown) having different light transmittances are manufactured, and the dispersion of the spectral sensitivity characteristics of the optical semiconductor element is made. There is a photodetector having a small variation in the photocurrent output value by combining with the plate according to the value. Also,
In addition to this, the amount of incident light is simply detected in the entire wavelength sensitivity range of the optical semiconductor device and the amount of light is detected, or the amount of light obtained by cutting the visible light spectral sensitivity range of the optical semiconductor device or the spectral sensitivity range of a certain wavelength. There is something to detect. That is, for example, in an automobile or the like, the solar radiation sensor used for air conditioning control measures the change in the thermal energy of the solar radiation, and therefore has a spectral sensitivity characteristic of 400 nm to 1200 nm.
Although a semiconductor element with a wavelength sensitivity range of nm is used, the visible light blocking agent causes 400 nm in the glass of the entrance window.
~ 700nm by cutting light in the 700nm wavelength range
Detecting the amount of solar radiation of 1200 nm and sending the signal to the control amplifier of the auto air conditioner, and the light sensor used in the auto light control device has the spectral sensitivity characteristic of FIG. 13 in order to measure the change in ambient brightness. 400 nm to 12
400 nm for optical semiconductor devices with a wavelength sensitivity range of 00 nm
It is configured to detect a light amount of up to 1200 nm and send the signal to the light control amplifier, and two sensors are separately used in the air conditioner field and the light field. The auto-light control device is a device that automatically lights the vehicle light when it gets dark and turns off the light when it gets bright according to the brightness of the surroundings.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記し
た従来の光検出器の構成では、エポキシ系樹脂部103
に添加物を加えて半導体受光素子105の分光感度を補
正するとか、同一入射光量に対する個々の光検出器の光
電流出力値のばらつきを単に小さくするというものであ
った。
However, in the structure of the conventional photodetector described above, the epoxy resin portion 103 is used.
In order to correct the spectral sensitivity of the semiconductor light receiving element 105 by adding an additive thereto, or to simply reduce the variation in the photocurrent output value of each photodetector for the same incident light amount.

【0004】また、日射センサとしての図12に示す分
光感度特性をもった光半導体素子をオートライトセンサ
に適用すると、人の眼には明るく見えない赤外光に感度
が強く、たとえば、自動車の車輌番号認識装置の光(9
00nmにピークをもつ赤外光ランプ)等に夜間動作
し、人には明るく見えず暗いのに、センサは反応し車輌
ライトを消してしまうという不具合があり、日射センサ
をオートライトセンサに兼用できないという課題があっ
た。また、光半導体素子の検出する分光感度特性を変え
るには、半導体素子のウエハー素材から変えたりプロセ
ス工程を変えることになり、標準品ではなく特殊品にな
り、小量生産においては非常なコスト高になるという課
題を有していた。
When an optical semiconductor element having a spectral sensitivity characteristic shown in FIG. 12 as a solar radiation sensor is applied to an auto light sensor, it has a high sensitivity to infrared light which is not visible to the human eye, for example, in an automobile. Light of vehicle number recognition device (9
There is a problem that the sensor reacts and turns off the vehicle light even if it operates at night such as an infrared lamp with a peak at 00 nm) and it is dark and not visible to people, so the solar sensor cannot be used as an auto light sensor. There was a problem. In addition, in order to change the spectral sensitivity characteristics of the optical semiconductor device, the wafer material of the semiconductor device must be changed or the process steps must be changed, making it a special product rather than a standard product. Had the problem of becoming.

【0005】本発明は、上記課題を解決するもので、一
つの光半導体素子によって、たとえば日射センサとオー
トライトセンサのように、センサ機能を兼ねることので
きる光検出器を提供することを目的としている。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a photodetector which can also have a sensor function, such as a solar radiation sensor and an autolight sensor, by a single optical semiconductor element. There is.

【0006】[0006]

【課題を解決するための手段】上記の課題を解決するた
めに、本発明は、入射光量を検出する光半導体素子の受
光面側に入射光窓部を設け、この入射光窓部を入射光の
波長の内の所定領域の波長の透過光量を制御する材料で
構成し、前記入射光窓部の透過光によって前記光半導体
素子の光電流出力値を制御することにより、前記光半導
体素子一個で複数センサの機能を兼ねるようにしたもの
で、これにより、測定や用途によって技術的、コスト的
に困難な光半導体素子の分光感度特性を変えなくても、
入射光窓部に予め定めた分光透過率を有する材料を用い
るだけで、複数用途や機能を兼ねたセンサを一つの光検
出器で実現することができる。
In order to solve the above-mentioned problems, the present invention provides an incident light window portion on the light receiving surface side of an optical semiconductor element for detecting the amount of incident light, and the incident light window portion is used as the incident light window portion. Composed of a material that controls the amount of transmitted light of a wavelength of a predetermined region of the wavelength of, by controlling the photocurrent output value of the optical semiconductor element by the transmitted light of the incident light window portion, by one optical semiconductor element It is designed to have the functions of multiple sensors, so that the spectral sensitivity characteristics of the optical semiconductor element, which are technically and costly difficult to change depending on the measurement or application, can be
By using a material having a predetermined spectral transmittance for the incident light window portion, it is possible to realize a sensor having multiple uses and functions with a single photodetector.

【0007】[0007]

【発明の実施の形態】本発明の請求項1に記載の発明
は、入射光窓部を形成したキャップで光半導体素子を覆
い、前記入射光窓部を透過して前記光半導体素子への入
射光量を検出する光検出器において、前記入射光窓部を
入射光の波長の内の所定領域の波長の透過光量を制御す
る材料で構成し、前記入射光窓部の透過光によって前記
光半導体素子の光電流出力値を制御することにより、前
記光半導体素子一個で複数センサの機能を兼ねるように
したものであり、これによって機器等の光検出器の構成
が簡単になり、しかも安価に提供できる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention covers an optical semiconductor element with a cap having an incident light window portion formed therein, and transmits the incident light window portion to enter the optical semiconductor element. In the photodetector for detecting the amount of light, the incident light window is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the wavelength of incident light, and the optical semiconductor element is formed by the transmitted light of the incident light window. By controlling the photocurrent output value of the optical semiconductor element, the single optical semiconductor element can also function as a plurality of sensors, which simplifies the configuration of the photodetector such as equipment and can be provided at low cost. .

【0008】また、請求項2に記載の発明は、前記の入
射光窓部を入射光の波長の内の略700nm以下と略9
00nm以上の波長の透過光量が制御される材料で構成
したものであり、これによって略700nmまでの可視
光域と900nm以上の赤外光域ので光半導体素子の感
度を抑制することができる。
According to a second aspect of the present invention, the incident light window is defined as approximately 700 nm or less of the wavelength of the incident light and approximately 9 nm.
It is made of a material that controls the amount of transmitted light with a wavelength of 00 nm or more, and this makes it possible to suppress the sensitivity of the optical semiconductor element in the visible light range up to about 700 nm and the infrared light range of 900 nm or more.

【0009】また、請求項3に記載の発明は、請求項2
記載の入射光窓部を用いることによって、光半導体素子
一個で日射用熱感知センサとオートライト用光感知セン
サを兼ねる構成にしたものであり、日射用とオートライ
ト用等二つ必要であったセンサを一つにできる。
The invention described in claim 3 is the same as the invention in claim 2
By using the incident light window part described, it is configured to combine both the solar heat detection sensor and the autolight light detection sensor with one optical semiconductor element, and two such as the solar light and autolight were required. You can have one sensor.

【0010】また、請求項4に記載の発明は、前記のキ
ャップ全体を合成樹脂製のケース、すなわち、樹脂ケー
スにしたものである。
In the invention according to claim 4, the cap is entirely made of a synthetic resin, that is, a resin case.

【0011】さらに請求項5に記載の発明は、前記のキ
ャップに代えて光半導体素子を直接合成樹脂材によって
樹脂コートしたものである。
Further, in the invention described in claim 5, an optical semiconductor element is directly resin-coated with a synthetic resin material instead of the cap.

【0012】さらにまた請求項6に記載の発明は、前記
のキャップに代えて光半導体素子を直接合成樹脂材によ
って樹脂モールドしたものであり、これら請求項4〜6
記載の発明により、光検出器をより安価なものにするこ
とができる。
Further, the invention according to claim 6 is one in which an optical semiconductor element is directly resin-molded with a synthetic resin material instead of the cap.
The described invention allows the photodetector to be less expensive.

【0013】また、請求項7に記載の発明は、光半導体
素子を樹脂コートして覆い、かつ前記光半導体素子を入
射光窓部を有するキャップまたは樹脂ケースで覆い、前
記入射光窓部または樹脂ケースと樹脂コート部を透過し
て前記光半導体素子への入射光量を検出する光検出器に
おいて、前記樹脂コート部を入射光の波長の内の所定領
域の波長の透過光量を制御する材料で構成し、前記樹脂
コート部の透過光によって前記光半導体素子の光電流出
力値を制御することにより、前記光半導体素子一個で複
数センサの機能を兼ねるようにしたものであり、これに
よって、樹脂コートされた光半導体素子を、キャップや
樹脂ケースで囲うことから、樹脂コートされた光半導体
素子を保護することができ、信頼性を向上することがで
きる。
According to a seventh aspect of the present invention, the optical semiconductor element is coated with a resin to cover the optical semiconductor element, and the optical semiconductor element is covered with a cap or a resin case having an incident light window portion. In a photodetector that detects the amount of light incident on the optical semiconductor element through the case and the resin coat portion, the resin coat portion is made of a material that controls the amount of transmitted light in a predetermined region of the wavelength of incident light. However, by controlling the photocurrent output value of the optical semiconductor element by the transmitted light of the resin coating portion, one optical semiconductor element also has the function of a plurality of sensors, by which the resin coating. Since the optical semiconductor element is surrounded by the cap or the resin case, the resin-coated optical semiconductor element can be protected and the reliability can be improved.

【0014】また、同請求項8に記載の発明は、請求項
7記載の樹脂コート部を入射光の波長の内の略700n
m以下と略900nm以上の波長の透過光量が制御され
る材料にしたものである。
According to the invention described in claim 8, the resin-coated portion according to claim 7 is provided with a wavelength of about 700 n within a wavelength of incident light.
It is made of a material that controls the amount of transmitted light having a wavelength of m or less and about 900 nm or more.

【0015】また、請求項9に記載の発明は、請求項8
記載の樹脂コート部を有する光半導体素子一個で日射用
熱感知センサとオートライト用光感知センサを兼ねる構
成にしたものである。
The invention according to claim 9 is the same as that of claim 8.
One optical semiconductor element having the above-described resin coating portion is configured to serve as both a heat detecting sensor for solar radiation and a light detecting sensor for auto lights.

【0016】また、請求項10に記載の発明は、入射光
窓部を複数個の入射光透過部材で構成し、この入射光透
過部材を介して光半導体素子への入射光量を検出する光
検出器において、前記入射光透過部材の内の少なくとも
一つは、入射光の波長の内の所定領域の波長の透過光量
を制御する材料で構成し、前記入射光窓部の透過光によ
って前記光半導体素子の光電流出力値を制御することに
より、前記光半導体素子一個で複数センサの機能を兼ね
るようにしたものであり、これによって、入射光を分散
させることができ、分光感度を向上することができる。
According to a tenth aspect of the present invention, the incident light window portion is composed of a plurality of incident light transmitting members, and light detection is performed to detect the amount of incident light to the optical semiconductor element via the incident light transmitting members. In the container, at least one of the incident light transmitting members is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region within the wavelength of incident light, and the optical semiconductor is controlled by the transmitted light of the incident light window. By controlling the photocurrent output value of the element, one optical semiconductor element also functions as a plurality of sensors, whereby incident light can be dispersed and spectral sensitivity can be improved. it can.

【0017】また、請求項11に記載の発明は、請求項
10記載の入射光窓部を入射光の波長の内の略700n
m以下と略900nm以上の波長の透過光量が制御され
る材料で構成したものである。
According to a tenth aspect of the present invention, the incident light window portion according to the tenth aspect is set to about 700n of the wavelength of the incident light.
It is made of a material that controls the amount of transmitted light having a wavelength of m or less and about 900 nm or more.

【0018】また、請求項12に記載の発明は、請求項
11記載の入射光窓部を受光面側に用いることによっ
て、光半導体素子一個で日射用熱感知センサとオートラ
イト用光感知センサを兼ねる構成にしたものである。
According to a twelfth aspect of the present invention, by using the incident light window section according to the eleventh aspect on the light-receiving surface side, a heat sensing sensor for solar radiation and a light sensing sensor for autolight can be provided by one optical semiconductor element. It has a double-sided structure.

【0019】また、請求項13に記載の発明は、光半導
体素子の表面を複数個の入射光透過部材で覆い、この入
射光透過部材を介して光半導体素子への入射光量を検出
する光検出器において、前記入射光透過部材の内の少な
くとも1つは、入射光の波長の内の所定領域の波長の透
過光量を制御する材料で構成し、前記入射光透過部材の
透過光によって前記光半導体素子の光電流出力値を制御
することにより、前記光半導体素子一個で複数センサの
機能を兼ねるようにしたものであり、請求項10記載の
発明同様分光感度を向上することができる。
According to a thirteenth aspect of the present invention, the surface of the optical semiconductor element is covered with a plurality of incident light transmitting members, and light detection is performed to detect the amount of light incident on the optical semiconductor element via the incident light transmitting members. In the container, at least one of the incident light transmitting members is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the wavelength of incident light, and the optical semiconductor is controlled by the transmitted light of the incident light transmitting member. By controlling the photocurrent output value of the device, one optical semiconductor device also functions as a plurality of sensors, and the spectral sensitivity can be improved as in the invention according to claim 10.

【0020】また、請求項14に記載の発明は、請求項
13記載の発明の入射光透過部材を入射光の波長の内の
略700nm以下と略900nm以上の波長の透過光量
が制御される材料で構成したものでる。
The invention according to claim 14 is the material for controlling the amount of transmitted light of the incident light transmitting member of the invention according to claim 13 at wavelengths of about 700 nm or less and about 900 nm or more of the wavelengths of the incident light. It is composed of.

【0021】また、請求項15に記載の発明は、請求項
14記載の入射光透過部材を有する光半導体素子一個で
日射用熱感知センサとオートライト用光感知センサを兼
ねる構成にしたものである。
According to a fifteenth aspect of the present invention, a single optical semiconductor element having the incident light transmitting member according to the fourteenth aspect serves as both a solar heat detection sensor and an autolight light detection sensor. .

【0022】[0022]

【実施例】以下本発明の実施例について図面を参照して
説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0023】(実施例1)図1において、1は導電性金
属ベース(以下ベースと略す)で、ベース1の略中心位
置には光半導体素子2が導電性接着剤等で取付けられて
いる。ベース1の光半導体素子2の近くには、ガラス3
を封入した貫通孔に、ハーメチックシール法によって一
方のリード足4を絶縁して取付け、リード足4の先端と
光半導体素子2とは金ワイヤ5等で接続している。ま
た、ベース1の下面には他方のリード足6が結合され、
またベース1の外周部には金属製のキャップ7が取付け
られ、キャップ7の天面に入射光窓部8が設けられてい
る。
(Embodiment 1) In FIG. 1, reference numeral 1 is a conductive metal base (hereinafter abbreviated as a base), and an optical semiconductor element 2 is attached to a substantially central position of the base 1 with a conductive adhesive or the like. A glass 3 is provided near the optical semiconductor element 2 of the base 1.
One of the lead legs 4 is insulated and attached to the through hole enclosing the lead by the hermetic sealing method, and the tip of the lead leg 4 and the optical semiconductor element 2 are connected by a gold wire 5 or the like. Also, the other lead leg 6 is coupled to the lower surface of the base 1,
A metal cap 7 is attached to the outer periphery of the base 1, and an incident light window 8 is provided on the top surface of the cap 7.

【0024】入射光窓部8は、光半導体素子2への光の
分光透過率を制御するための材料を添加したガラス質の
ものや樹脂系のもので構成している。たとえば、入射光
窓部8の材料を、リン酸塩ガラスより鉄分を2重量%含
有するリン酸塩ガラスとすることにより、光半導体素子
2の入射光の分光感度特性を図2に示す曲線Aから曲線
Bの分光感度特性に変えることができる。すなわち、曲
線Aは日射センサ用光半導体素子の分光感度特性であ
り、曲線Aを曲線Bに変えることで400〜略700n
m近くまでの可視光と略900nm以上の赤外光の分光
感度を抑制することができる。
The incident light window 8 is made of a glass material or a resin material to which a material for controlling the spectral transmittance of light to the optical semiconductor element 2 is added. For example, when the material of the incident light window portion 8 is phosphate glass containing 2% by weight of iron from phosphate glass, the spectral sensitivity characteristic of the incident light of the optical semiconductor element 2 is indicated by the curve A shown in FIG. Can be changed to the spectral sensitivity characteristic of curve B. That is, the curve A is the spectral sensitivity characteristic of the photo-semiconductor element for solar radiation sensor, and by changing the curve A to the curve B, 400 to approximately 700n is obtained.
It is possible to suppress the spectral sensitivity of visible light up to near m and infrared light of approximately 900 nm or more.

【0025】したがって、上記材料からなる入射光窓部
8を日射センサの特性をもつ光半導体2に適応すること
により、図2の曲線Bに示すように、オートライトセン
サとしては400nm〜700nmの光を従来のカット
でなく抑制しているだけであるため、自動車等の場合、
昼間はこの明るさによる感度(光電流出力)によって消
灯され、夜間はこの逆の作用とともに、夜間走行時にた
とえ車輌番号認識装置からの人工光(900nmにピー
クをもつ赤外光)を受光しても、略900nm以上の感
度を略1/10程度に抑制しているために消灯動作をさ
せることがない。また、日射センサとしては、この分光
感度特性によって太陽光の熱エネルギー大きさを充分検
知することができる。
Therefore, by adapting the incident light window portion 8 made of the above material to the optical semiconductor 2 having the characteristics of the solar radiation sensor, as shown by the curve B in FIG. 2, the light of 400 nm to 700 nm is used as an auto light sensor. In the case of automobiles, etc.,
In the daytime, it is turned off by the sensitivity (photocurrent output) due to this brightness, and at night, it has the opposite effect, and receives artificial light (infrared light with a peak at 900 nm) from the vehicle number recognition device when traveling at night. However, since the sensitivity of about 900 nm or more is suppressed to about 1/10, the light-off operation is not performed. Further, as a solar radiation sensor, the magnitude of thermal energy of sunlight can be sufficiently detected by this spectral sensitivity characteristic.

【0026】(実施例2)図3、図4は実施例2の光検
出器の断面図であり、図3に示すように、前記キャップ
の全体を合成樹脂製の樹脂ケース9にしたもので、樹脂
ケース9は光半導体素子2への光の分光透過率を実施例
1と同様に制御する材料で構成している。また、図4は
さらにベースも単なる封止樹脂10とした他の例であ
り、これによって、部品の構成や成形性及び組立性が簡
単になる。
(Embodiment 2) FIGS. 3 and 4 are sectional views of a photodetector of Embodiment 2. As shown in FIG. 3, the cap is entirely made of a resin case 9 made of synthetic resin. The resin case 9 is made of a material that controls the spectral transmittance of light to the optical semiconductor element 2 as in the first embodiment. Further, FIG. 4 shows another example in which the base is also simply the sealing resin 10, and this simplifies the construction, moldability and assemblability of the parts.

【0027】(実施例3)図5、図6は実施例3の光検
出器の断面図であり、図5に示すように、半導体素子2
を直接合成樹脂によって樹脂コートしたものであり、こ
の樹脂コート部11は光半導体素子2への光の分光透過
率を実施例1と同様に制御する材料で構成している。ま
た、図5はベースをさらに金属ケース12とした他の例
である。
(Embodiment 3) FIGS. 5 and 6 are sectional views of a photodetector according to Embodiment 3, and as shown in FIG.
Is directly resin-coated with a synthetic resin, and the resin-coated portion 11 is made of a material that controls the spectral transmittance of light to the optical semiconductor element 2 as in the first embodiment. FIG. 5 shows another example in which the metal case 12 is further used as the base.

【0028】(実施例4)図7は実施例4の光検出器の
断面図であり、実施例1のキャップと入射光窓部とベー
スをなくして、光半導体素子2を合成樹脂で樹脂モール
ドしたものであり、この樹脂モールド部13は光半導体
素子2への光の分光透過率を実施例1と同様に制御する
材料で構成している。
(Embodiment 4) FIG. 7 is a sectional view of the photodetector of Embodiment 4, in which the cap, the incident light window and the base of Embodiment 1 are eliminated and the optical semiconductor element 2 is resin-molded with a synthetic resin. The resin mold portion 13 is made of a material that controls the spectral transmittance of light to the optical semiconductor element 2 as in the first embodiment.

【0029】(実施例5)図8、図9は実施例5の光検
出器の断面図であり、実施例1、2の入射窓部または樹
脂ケースを、単に光をそのまま透過する材料の入射窓部
8aまたは樹脂ケース9aとし、かつ光半導体素子2表
面に直接樹脂コートしてこの樹脂コート14部を実施例
3と同様の分光透過率を制御する材料で構成したもので
ある。このため、樹脂コート14部は、図8、図9のよ
うに、常に入射窓部8aを有するキャップ7や樹脂ケー
ス9aによつて外部より保護される構成になる。
(Embodiment 5) FIGS. 8 and 9 are cross-sectional views of the photodetector of Embodiment 5, in which a material that allows light to pass through the entrance window portion or resin case of Embodiments 1 and 2 is simply incident. The window portion 8a or the resin case 9a is formed, and the surface of the optical semiconductor element 2 is directly resin-coated, and the resin coating 14 portion is made of the same material as in Example 3 for controlling the spectral transmittance. Therefore, as shown in FIGS. 8 and 9, the resin coat 14 is always protected from the outside by the cap 7 having the entrance window 8a and the resin case 9a.

【0030】(実施例6)図10は実施例6の光検出器
の断面図であり、実施例1の図1で示した入射光窓部
を、たとえば、ガラス、樹脂製のシート材及びコーティ
ング材等の複数の光透過部材15で構成し、その内の一
つの部材を光半導体素子2への光の分光透過率を実施例
1と同様に制御する材料で構成している。これにより、
入射光の分散性をよくすることができ、シャープな分光
感度特性が得られるため、出力幅の拡大、精度の向上を
図ることができる。
(Sixth Embodiment) FIG. 10 is a sectional view of a photodetector of a sixth embodiment. The incident light window shown in FIG. 1 of the first embodiment is provided with, for example, a glass or resin sheet material and a coating. It is composed of a plurality of light transmitting members 15 such as a material, and one of them is made of a material that controls the spectral transmittance of light to the optical semiconductor element 2 as in the first embodiment. This allows
Since the dispersibility of incident light can be improved and sharp spectral sensitivity characteristics can be obtained, the output width can be expanded and the accuracy can be improved.

【0031】(実施例7)図11は実施例7の光検出器
の断面図であり、実施例5の樹脂コート部14を、たと
えば、樹脂製のシート材およびコーティング材等の複数
の光透過部材16で構成し、その内の1つの部材を実施
例1と同様の光半導体素子2への光の分光透過率を制御
する材料で構成して、光透過部材16を保護しながら入
射光の分散性をよくするようにしている。
(Embodiment 7) FIG. 11 is a cross-sectional view of the photodetector of Embodiment 7. The resin coat portion 14 of Embodiment 5 is used for transmitting a plurality of light such as resin sheet material and coating material. The member 16 is composed of one member, and one of the members is composed of a material that controls the spectral transmittance of light to the optical semiconductor element 2 similar to that of the first embodiment. I try to improve the dispersibility.

【0032】[0032]

【発明の効果】以上のように、本発明の光検出器によれ
ば、入射光量を検出する光半導体素子の受光面側に入射
光窓部を設け、この入射光窓部を入射光の波長の内の所
定領域の波長の透過光量を制御する材料で構成し、前記
入射光窓部の透過光によって前記光半導体素子の光電流
出力値を制御することにより、前記光半導体素子一個で
複数センサの機能を兼ねるようにしたもので、これによ
り、測定や用途によって技術的、コスト的に困難な光半
導体素子の分光感度特性を変えなくても、入射光窓部に
予め定めた分光透過率を有する材料を用いるだけの簡単
な手段で、複数用途や機能を兼ねたセンサを一個の光半
導体素子によって実現することができる。
As described above, according to the photodetector of the present invention, the incident light window is provided on the light receiving surface side of the optical semiconductor element for detecting the amount of incident light, and the incident light window is used as the wavelength of the incident light. Of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the above, by controlling the photocurrent output value of the optical semiconductor element by the transmitted light of the incident light window, a plurality of sensors in one optical semiconductor element This allows the incident light window to have a predetermined spectral transmittance without changing the spectral sensitivity characteristics of the optical semiconductor element, which is technically and costly difficult depending on the measurement and application. A sensor having multiple uses and functions can be realized by a single optical semiconductor element by a simple means using only the material that it has.

【0033】また、前記入射光窓部を入射光の波長の内
の略700nm以下と略900nm以上の波長の透過光
量が制御される材料で構成することにより、所定の可視
光域と赤外光域ので光半導体素子の感度を抑制すること
ができるとともに、この入射光窓部を用いることによっ
て、光半導体素子一個で日射用熱感知センサとオートラ
イト用光感知センサを兼ねる構成にでき、日射用とオー
トライト用等二つ必要であったセンサを一つにできるの
で、装着性、作業性が向上し、コスト的にも安価なもの
にできる。
Further, by forming the incident light window portion with a material that controls the amount of transmitted light having a wavelength of approximately 700 nm or less and approximately 900 nm or more of the wavelength of the incident light, a predetermined visible light region and infrared light can be obtained. It is possible to suppress the sensitivity of the optical semiconductor element in the area, and by using this incident light window part, it is possible to configure a single optical semiconductor element to act as both a heat sensor for solar radiation and a light sensor for autolight. Since two sensors, such as those for auto lights, can be combined into one, the mountability and workability are improved, and the cost can be reduced.

【0034】また、キャップ全体を前記同様の分光透過
率を制御する合成樹脂製のケースとしたり、その合成樹
脂材により光半導体素子を直接樹脂コートや樹脂モール
ドすることによって、光検出器をより安価なものにする
ことができる。
Further, by making the entire cap a case made of synthetic resin for controlling the same spectral transmittance as described above, or by directly resin-coating or resin-molding an optical semiconductor element with the synthetic resin material, the photodetector can be made cheaper. It can be anything.

【0035】また、光半導体素子を前記合成樹脂材で樹
脂コートし、周囲を単に光を透過するキャップや樹脂ケ
ースで覆うことにより、樹脂コートされた光半導体素子
を保護することができ、光検出器としての経年変化の抑
制、信頼性の向上を図ることができる。
Further, by coating the optical semiconductor element with the above-mentioned synthetic resin material and covering the periphery thereof with a cap or a resin case that simply transmits light, the resin-coated optical semiconductor element can be protected and the light detection can be performed. It is possible to suppress the secular change as a container and improve the reliability.

【0036】また、入射光窓部または光半導体素子の表
面を直接複数個の入射光透過部材で構成し、入射光透過
部材の内の少なくとも一つは、入射光の波長の内の所定
領域の波長の透過光量を制御する材料とすることによ
り、入射光の分散性をよくすることができ、光検出器と
しての出力幅の拡大と精度の向上を図ることができる。
Further, the incident light window or the surface of the optical semiconductor element is directly constituted by a plurality of incident light transmitting members, and at least one of the incident light transmitting members has a predetermined area within the wavelength of the incident light. By using a material that controls the amount of transmitted light of a wavelength, the dispersibility of incident light can be improved, and the output width and accuracy of the photodetector can be increased.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1の光検出器の断面図FIG. 1 is a sectional view of a photodetector according to a first embodiment of the present invention.

【図2】同光半導体素子の分光感度特性を説明するため
のグラフ
FIG. 2 is a graph for explaining a spectral sensitivity characteristic of the optical semiconductor device.

【図3】同実施例2の光検出器の断面図FIG. 3 is a sectional view of the photodetector of the second embodiment.

【図4】同実施例2の他の光検出器の断面図FIG. 4 is a sectional view of another photodetector of the second embodiment.

【図5】同実施例3の光検出器の断面図FIG. 5 is a sectional view of the photodetector of the third embodiment.

【図6】同実施例3の他の光検出器の断面図FIG. 6 is a sectional view of another photodetector of the third embodiment.

【図7】同実施例4の光検出器の断面図FIG. 7 is a sectional view of the photodetector of the fourth embodiment.

【図8】同実施例5の光検出器の断面図FIG. 8 is a sectional view of the photodetector of the fifth embodiment.

【図9】同実施例5の光検出器の断面図FIG. 9 is a sectional view of the photodetector of the fifth embodiment.

【図10】同実施例6の光検出器の断面図FIG. 10 is a sectional view of the photodetector of the sixth embodiment.

【図11】同実施例7の光検出器の断面図FIG. 11 is a sectional view of the photodetector of the seventh embodiment.

【図12】自動車用日射センサの半導体素子の分光感度
特性を示すグラフ
FIG. 12 is a graph showing a spectral sensitivity characteristic of a semiconductor element of an insolation sensor for automobiles.

【図13】自動車用オートライトセンサの半導体素子の
分光感度特性を示すグラフ
FIG. 13 is a graph showing a spectral sensitivity characteristic of a semiconductor element of an automobile auto light sensor.

【図14】従来の光検出器の断面図FIG. 14 is a sectional view of a conventional photodetector.

【図15】同半導体受光素子の受光感度を示すグラフFIG. 15 is a graph showing the light receiving sensitivity of the semiconductor light receiving element.

【符号の説明】[Explanation of symbols]

2 光半導体素子 8、8a 入射光窓部 9、9a 樹脂ケース 11、14 樹脂コート部 13 樹脂モールド部 15、16 入射光透過部 2 Optical semiconductor element 8, 8a Incident light window part 9, 9a Resin case 11, 14 Resin coat part 13 Resin mold part 15, 16 Incident light transmitting part

Claims (15)

    【特許請求の範囲】[Claims]
  1. 【請求項1】入射光窓部を有するキャップで光半導体素
    子を覆い、前記入射光窓部を透過して前記光半導体素子
    への入射光量を検出する光検出器において、前記入射光
    窓部は入射光の波長の内の所定領域の波長の透過光量を
    制御する材料で構成し、前記入射光窓部の透過光によっ
    て前記光半導体素子の光電流出力値を制御することによ
    り、前記光半導体素子一個で複数センサの機能を兼ねる
    ようにした光検出器。
    1. A photodetector for covering an optical semiconductor element with a cap having an incident light window portion and transmitting the incident light window portion to detect the amount of incident light to the optical semiconductor element, wherein the incident light window portion is The optical semiconductor element is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the wavelength of incident light, and controls the photocurrent output value of the optical semiconductor element by the transmitted light of the incident light window. An optical detector that doubles as a single sensor.
  2. 【請求項2】入射光窓部は入射光の波長の内の略700
    nm以下と略900nm以上の波長の透過光量を制御す
    る材料で構成した請求項1記載の光検出器。
    2. The incident light window portion is about 700 of the wavelengths of incident light.
    The photodetector according to claim 1, wherein the photodetector is made of a material that controls the amount of transmitted light having a wavelength of less than or equal to nm and approximately 900 nm or greater.
  3. 【請求項3】光半導体素子一個で日射用熱感知センサと
    オートライト用光感知センサを兼ねるようにした請求項
    2記載の光検出器。
    3. The photodetector according to claim 2, wherein one optical semiconductor element serves as both a heat detecting sensor for solar radiation and a light detecting sensor for auto lights.
  4. 【請求項4】キャップ全体を一体の樹脂ケースにした請
    求項1、2または3記載の光検出器。
    4. The photodetector according to claim 1, 2 or 3, wherein the entire cap is an integral resin case.
  5. 【請求項5】キャップに代えて光半導体素子を樹脂コー
    トして覆い、入射光窓部を樹脂コート部にした請求項
    1、2または3記載の光検出器。
    5. The photodetector according to claim 1, wherein the photo-semiconductor element is covered with a resin instead of the cap and the incident light window is covered with the resin.
  6. 【請求項6】キャップに代えて光半導体素子を樹脂モー
    ルドして覆い、入射光窓部を樹脂モールド部にした請求
    項1、2または3記載の光検出器。
    6. A photodetector according to claim 1, 2 or 3, wherein an optical semiconductor element is resin-molded and covered instead of the cap, and the incident light window portion is a resin-molded portion.
  7. 【請求項7】光半導体素子を樹脂コートして覆い、かつ
    前記光半導体素子を入射光窓部を有するキャップまたは
    樹脂ケースで覆い、前記入射光窓部または樹脂ケースと
    樹脂コート部を透過して前記光半導体素子への入射光量
    を検出する光検出器において、前記樹脂コート部は入射
    光の波長の内の所定領域の波長の透過光量を制御する材
    料で構成し、前記樹脂コート部の透過光によって前記光
    半導体素子の光電流出力値を制御することにより、前記
    光半導体素子一個で複数センサの機能を兼ねるようにし
    た光検出器。
    7. An optical semiconductor element is coated with a resin to cover it, and the optical semiconductor element is covered with a cap or a resin case having an incident light window section, and the incident light window section or the resin case and the resin coat section are transmitted. In the photodetector that detects the amount of incident light to the optical semiconductor element, the resin coat portion is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the wavelength of incident light, and the transmitted light of the resin coat portion A photodetector in which one photo-semiconductor element also functions as a plurality of sensors by controlling the photocurrent output value of the photo-semiconductor element by means of.
  8. 【請求項8】樹脂コート部は入射光の波長の内の略70
    0nm以下と略900nm以上の波長の透過光量を制御
    する材料で構成した請求項7記載の光検出器。
    8. The resin coating portion has approximately 70 wavelengths of incident light.
    The photodetector according to claim 7, which is made of a material that controls the amount of transmitted light having a wavelength of 0 nm or less and approximately 900 nm or more.
  9. 【請求項9】光半導体素子一個で日射用熱感知センサと
    オートライト用光感知センサを兼ねるようにした請求項
    8記載の光検出器。
    9. The photodetector according to claim 8, wherein one optical semiconductor element serves as both a heat sensor for solar radiation and a photosensor for autolight.
  10. 【請求項10】入射光窓部を複数個の入射光透過部材で
    構成し、この入射光透過部材を介して光半導体素子への
    入射光量を検出する光検出器において、前記入射光透過
    部材の内の少なくとも一つは、入射光の波長の内の所定
    領域の波長の透過光量を制御する材料で構成し、前記入
    射光窓部の透過光によって前記光半導体素子の光電流出
    力値を制御することにより、前記光半導体素子一個で複
    数センサの機能を兼ねるようにした光検出器。
    10. A photodetector, wherein an incident light window portion is composed of a plurality of incident light transmitting members, and the amount of incident light to an optical semiconductor element is detected via the incident light transmitting members, the incident light transmitting member comprising: At least one of them is made of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the wavelength of incident light, and controls the photocurrent output value of the optical semiconductor element by the transmitted light of the incident light window. As a result, a photodetector in which the single optical semiconductor element also serves as a plurality of sensors.
  11. 【請求項11】入射光窓部は入射光の波長の内の略70
    0nm以下と略900nm以上の波長の透過光量を制御
    する材料で構成した請求項10記載の光検出器。
    11. The incident light window portion is approximately 70 of the wavelengths of incident light.
    The photodetector according to claim 10, which is made of a material that controls the amount of transmitted light having a wavelength of 0 nm or less and approximately 900 nm or more.
  12. 【請求項12】光半導体素子一個で日射用熱感知センサ
    とオートライト用光感知センサを兼ねるようにした請求
    項11記載の光検出器。
    12. The photodetector according to claim 11, wherein one optical semiconductor element serves as both a heat sensor for solar radiation and a photosensor for autolight.
  13. 【請求項13】光半導体素子の表面を複数個の入射光透
    過部材で覆い、この入射光透過部材を介して光半導体素
    子への入射光量を検出する光検出器において、前記入射
    光透過部材の内の少なくとも一つは、入射光の波長の内
    の所定領域の波長の透過光量を制御する材料で構成し、
    前記入射光透過部材の透過光によって前記光半導体素子
    の光電流出力値を制御することにより、前記光半導体素
    子一個で複数センサの機能を兼ねるようにした光検出
    器。
    13. A photodetector for covering the surface of an optical semiconductor element with a plurality of incident light transmitting members and detecting the amount of incident light to the optical semiconductor element via the incident light transmitting members, wherein At least one of them is composed of a material that controls the amount of transmitted light of a wavelength in a predetermined region of the wavelength of incident light,
    A photodetector in which the photocurrent output value of the optical semiconductor element is controlled by the transmitted light of the incident light transmitting member, so that the single optical semiconductor element also functions as a plurality of sensors.
  14. 【請求項14】入射光透過部材は入射光の波長の内の略
    700nm以下と略900nm以上の波長の透過光量を
    制御する材料で構成した請求項13記載の光検出器。
    14. The photodetector according to claim 13, wherein the incident light transmitting member is made of a material that controls the amount of transmitted light having a wavelength of approximately 700 nm or less and approximately 900 nm or more of the wavelength of the incident light.
  15. 【請求項15】光半導体素子一個で日射用熱感知センサ
    とオートライト用光感知センサを兼ねるようにした請求
    項14記載の光検出器。
    15. The photodetector according to claim 14, wherein one optical semiconductor element serves as both a heat detection sensor for solar radiation and a light detection sensor for autolight.
JP8112489A 1996-05-07 1996-05-07 Photo detector Granted JPH09297054A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8112489A JPH09297054A (ja) 1996-05-07 1996-05-07 Photo detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8112489A JPH09297054A (ja) 1996-05-07 1996-05-07 Photo detector
US08/834,979 US5949073A (en) 1996-05-07 1997-04-07 Photo detector

Publications (1)

Publication Number Publication Date
JPH09297054A true JPH09297054A (ja) 1997-11-18

Family

ID=14587933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8112489A Granted JPH09297054A (ja) 1996-05-07 1996-05-07 Photo detector

Country Status (2)

Country Link
US (1) US5949073A (ja)
JP (1) JPH09297054A (ja)

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JP2008089311A (ja) * 2006-09-29 2008-04-17 Noba Denko Kk Solar radiation sensor
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KR100418889B1 (ko) * 2001-07-05 2004-02-14 엘지전자 주식회사 포토 센서 및 그의 감도 조절 방법
JP2008089311A (ja) * 2006-09-29 2008-04-17 Noba Denko Kk Solar radiation sensor
JP2013168512A (ja) * 2012-02-15 2013-08-29 Seiko Instruments Inc Photodetection device and method for manufacturing photodetection device
US8928257B2 (en) 2013-03-06 2015-01-06 Denso Wave Incorporated Lighting control device

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