KR100923739B1 - 유기 반도체 소자 - Google Patents
유기 반도체 소자 Download PDFInfo
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- KR100923739B1 KR100923739B1 KR1020020076877A KR20020076877A KR100923739B1 KR 100923739 B1 KR100923739 B1 KR 100923739B1 KR 1020020076877 A KR1020020076877 A KR 1020020076877A KR 20020076877 A KR20020076877 A KR 20020076877A KR 100923739 B1 KR100923739 B1 KR 100923739B1
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- Prior art keywords
- organic
- thin film
- film layer
- layer
- organic compound
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- 238000000206 photolithography Methods 0.000 description 1
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- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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Abstract
Description
Claims (53)
- 삭제
- 삭제
- 두 전극 사이의 첫번째 내지 n번째(n은 2 이상의 정수(整數))의 기능성 유기 박막층을 포함하는 유기 구조체를 포함하고,k번째(k는 1≤k≤(n-1)이 되는 정수)의 기능성 유기 박막층과 k+1번째의 기능성 유기 박막층 사이에, 유기 화합물을 포함하는 도전체 박막층이 형성되어 있고,상기 도전체 박막층은 상기 유기 화합물에 대한 억셉터를 적어도 함유하고,상기 도전체 박막층은 부유(floating) 상태인 유기 반도체 소자.
- 두 전극 사이의 첫번째 내지 n번째(n은 2 이상의 정수)의 기능성 유기 박막층을 포함하는 유기 구조체를 포함하고,k번째(k는 1≤k≤(n-1)이 되는 정수)의 기능성 유기 박막층과 k+1번째의 기능성 유기 박막층 사이에, 유기 화합물을 포함하는 도전체 박막층이 형성되어 있고,상기 도전체 박막층은 상기 유기 화합물에 대한 억셉터와 도너 모두를 함유하고,상기 도전체 박막층은 부유 상태인 유기 반도체 소자.
- 제 3 항 또는 제 4 항에 있어서, 상기 도전체 박막층과 접하는 상기 기능성 유기 박막층의 영역은 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물을 포함하는 유기 반도체 소자.
- 제 4 항에 있어서, 상기 도전체 박막층은, 상기 유기 화합물에 상기 억셉터를 첨가하여 형성된 제1 층과, 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물에 상기 도너를 첨가하여 형성된 제2 층을 적층하여 구성되고,상기 제1 층은 상기 제2 층보다 음극측에 더 가까이 위치하는 유기 반도체 소자.
- 제 6 항에 있어서, 상기 도전체 박막층과 접하는 상기 기능성 유기 박막층의 영역은 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물을 포함하는 유기 반도체 소자.
- 제 4 항에 있어서, 상기 도전체 박막층은, 제1 유기 화합물에 상기 억셉터를 첨가하여 형성된 제1 층과, 상기 제1 유기 화합물과는 다른 제2 유기 화합물에 상기 도너를 첨가하여 형성된 제2 층을 적층하여 구성되고,상기 제1 층은 상기 제2 층보다 음극측에 더 가까이 위치하는 유기 반도체 소자.
- 제 8 항에 있어서, 상기 제1 층과 접하는 상기 기능성 유기 박막층의 영역은 상기 제1 유기 화합물과 동일한 유기 화합물을 포함하는 유기 반도체 소자.
- 제 8 항에 있어서, 상기 제2 층과 접하는 상기 기능성 유기 박막층의 영역은 상기 제2 유기 화합물과 동일한 유기 화합물을 포함하는 유기 반도체 소자.
- 제 3 항 또는 제 4 항에 있어서, 상기 기능성 유기 박막층은 쌍극성의 유기 화합물을 포함하는 유기 반도체 소자.
- 제 3 항 또는 제 4 항에 있어서, 상기 기능성 유기 박막층은, 정공 수송성 재료를 포함하는 적어도 하나의 정공 수송층과, 전자 수송성 재료를 포함하는 적어도 하나의 전자 수송층을 가지고 있고,상기 정공 수송층은 상기 전자 수송층보다 양극측에 더 가까이 위치하는 유기 반도체 소자.
- 삭제
- 삭제
- 전류를 흐르게 함으로써 광을 방출하고, 양극과 음극 사이의 첫번째 내지 n번째(n은 2 이상의 정수)의 기능성 유기 박막층을 포함하는 유기 구조체를 포함하고,k번째(k는 1≤k≤(n-1)이 되는 정수)의 기능성 유기 박막층과 k+1번째의 기능성 유기 박막층 사이에, 유기 화합물을 포함하는 도전체 박막층이 형성되어 있고,상기 도전체 박막층은 상기 유기 화합물에 대한 억셉터를 적어도 함유하고,상기 도전체 박막층은 부유 상태인 유기 전계발광 소자.
- 전류를 흐르게 함으로써 광을 방출하고, 양극과 음극 사이의 첫번째 내지 n번째(n은 2 이상의 정수)의 기능성 유기 박막층을 포함하는 유기 구조체를 포함하고,k번째(k는 1≤k≤(n-1)이 되는 정수)의 기능성 유기 박막층과 k+1번째의 기능성 유기 박막층 사이에는, 유기 화합물을 포함하는 도전체 박막층이 형성되어 있고,상기 도전체 박막층은 상기 유기 화합물에 대한 억셉터와 도너 모두를 함유하고,상기 도전체 박막층은 부유 상태인 유기 전계발광 소자.
- 제 15 항 또는 제 16 항에 있어서, 상기 도전체 박막층과 접하는 상기 기능성 유기 박막층의 영역은 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물을 포함하는 유기 전계발광 소자.
- 제 16 항에 있어서, 상기 도전체 박막층은, 상기 유기 화합물에 상기 억셉터를 첨가하여 형성된 제1 층과, 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물에 상기 도너를 첨가하여 형성된 제2 층을 적층하여 구성되고,상기 제1 층은 상기 제2 층보다 음극측에 더 가까이 위치하는 유기 전계발광 소자.
- 제 18 항에 있어서, 상기 도전체 박막층과 접하는 상기 기능성 유기 박막층의 영역은 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물을 포함하는 유기 전계발광 소자.
- 제 16 항에 있어서, 상기 도전체 박막층은, 제1 유기 화합물에 상기 억셉터를 첨가하여 형성된 제1 층과, 상기 제1 유기 화합물과는 다른 제2 유기 화합물에 상기 도너를 첨가하여 형성된 제2 층을 적층하여 구성되고,상기 제1 층은 상기 제2 층보다 음극측에 더 가까이 위치하는 유기 전계발광 소자.
- 제 20 항에 있어서, 상기 제1 층과 접하는 상기 기능성 유기 박막층의 영역은 상기 제1 유기 화합물과 동일한 유기 화합물을 포함하는 유기 전계발광 소자.
- 제 20 항에 있어서, 상기 제2 층과 접하는 상기 기능성 유기 박막층의 영역은 상기 제2 유기 화합물과 동일한 유기 화합물을 포함하는 유기 전계발광 소자.
- 제 15 항에 있어서, 상기 기능성 유기 박막층은 쌍극성의 유기 화합물로 이루어진 유기 전계발광 소자.
- 제 15 항 또는 제 16 항에 있어서, 상기 기능성 유기 박막층은 정공 수송성 재료를 포함하는 적어도 하나의 정공 수송층과, 전자 수송성 재료를 포함하는 적어도 하나의 전자 수송층을 가지고 있고,상기 정공 수송층은 상기 전자 수송층보다 상기 양극측에 더 가까이 위치하는 유기 전계발광 소자.
- 제 23 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하는 유기 전계발광 소자.
- 제 23 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하고,상기 도전체 박막층은 π공역계를 가지는 고분자 화합물을 포함하는 유기 전계발광 소자.
- 제 23 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하고,상기 도전체 박막층은 상기 억셉터가 첨가된 도전성 고분자 화합물을 포함하는 유기 전계발광 소자.
- 제 24 항에 있어서, 상기 도전체 박막층은 상기 정공 수송성 재료와 상기 전자 수송성 재료 중 적어도 하나를 포함하는 유기 전계발광 소자.
- 제 24 항에 있어서, 상기 도전체 박막층은 상기 정공 수송성 재료와 상기 전자 수송성 재료 모두를 포함하는 유기 전계발광 소자.
- 삭제
- 삭제
- 광을 흡수함으로써 기전력을 발생시키고, 두 전극 사이의 첫번째 내지 n번째(n은 2 이상의 정수)의 기능성 유기 박막층을 포함하는 유기 구조체를 포함하고,k번째(k는 1≤k≤(n-1)이 되는 정수)의 기능성 유기 박막층과 k+1번째의 기능성 유기 박막층 사이에, 유기 화합물을 포함하는 도전체 박막층이 형성되어 있고,상기 도전체 박막층은 상기 유기 화합물에 대한 억셉터를 적어도 함유하고,상기 도전체 박막층은 부유 상태인 유기 태양전지.
- 광을 흡수함으로써 기전력을 발생시키고, 두 전극 사이의 첫번째 내지 n번째(n은 2 이상의 정수)의 기능성 유기 박막층을 포함하는 유기 구조체를 포함하고,k번째(k는 1≤k≤(n-1)이 되는 정수)의 기능성 유기 박막층과 k+1번째의 기능성 유기 박막층 사이에, 유기 화합물을 포함하는 도전체 박막층이 형성되어 있고,상기 도전체 박막층은 상기 유기 화합물에 대한 억셉터와 도너 모두를 함유하고,상기 도전체 박막층은 부유 상태인 유기 태양전지.
- 제 32 항 또는 제 33 항에 있어서, 상기 도전체 박막층과 접하는 상기 기능성 유기 박막층의 영역은 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물을 포함하는 유기 태양전지.
- 제 33 항에 있어서, 상기 도전체 박막층은, 상기 유기 화합물에 상기 억셉터를 첨가하여 형성된 제1 층과, 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물에 상기 도너를 첨가하여 형성된 제2 층을 적층하여 구성되고,상기 제1 층은 상기 제2 층보다 음극측에 더 가까이 위치하는 유기 태양전지.
- 제 35 항에 있어서, 상기 도전체 박막층과 접하는 상기 기능성 유기 박막층의 영역은 상기 도전체 박막층의 유기 화합물과 동일한 유기 화합물을 포함하는 유기 태양전지.
- 제 33 항에 있어서, 상기 도전체 박막층은, 제1 유기 화합물에 상기 억셉터를 첨가하여 형성된 제1 층과, 상기 제1 유기 화합물과는 다른 제2 유기 화합물에 상기 도너를 첨가하여 형성된 제2 층을 적층하여 구성되고,상기 제1 층은 상기 제2 층보다 음극측에 더 가까이 위치하는 유기 태양전지.
- 제 37 항에 있어서, 상기 제1 층과 접하는 상기 기능성 유기 박막층의 영역은 상기 제1 유기 화합물과 동일한 유기 화합물을 포함하는 유기 태양전지.
- 제 37 항에 있어서, 상기 제2 층과 접하는 상기 기능성 유기 박막층의 영역은 상기 제2 유기 화합물과 동일한 유기 화합물을 포함하는 유기 태양전지.
- 제 32 항에 있어서, 상기 기능성 유기 박막층은 쌍극성의 유기 화합물로 이루어진 유기 태양전지.
- 제 32 항 또는 제 33 항에 있어서, 상기 기능성 유기 박막층은 정공 수송성 재료를 포함하는 적어도 하나의 정공 수송층과, 전자 수송성 재료를 포함하는 적어도 하나의 전자 수송층을 가지고 있고,상기 정공 수송층은 상기 전자 수송층보다 양극측에 더 가까이 위치하는 유기 태양전지.
- 제 40 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하는 유기 태양전지.
- 제 40 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하고,상기 도전체 박막층은 π공역계를 가지는 고분자 화합물을 포함하는 유기 태양전지.
- 제 40 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하고,상기 도전체 박막층은 상기 억셉터가 첨가된 도전성 고분자 화합물을 포함하는 유기 태양전지.
- 제 41 항에 있어서, 상기 도전체 박막층은 상기 정공 수송성 재료와 상기 전자 수송성 재료 중 적어도 하나를 포함하는 유기 태양전지.
- 제 41 항에 있어서, 상기 도전체 박막층은 상기 정공 수송성 재료와 상기 전자 수송성 재료 모두를 포함하는 유기 태양전지.
- 제 3 항 또는 제 4 항에 있어서, 상기 도전체 박막층의 도전율이 10-10 S/m 이상인 유기 반도체 소자.
- 제 15 항 또는 제 16 항에 있어서, 상기 도전체 박막층의 도전율이 10-10 S/m 이상인 유기 전계발광 소자.
- 제 32 항 또는 제 33 항에 있어서, 상기 도전체 박막층의 도전율이 10-10 S/m 이상인 유기 태양전지.
- 제 16 항에 있어서, 상기 기능성 유기 박막층은 쌍극성의 유기 화합물로 이루어진, 유기 전계발광 소자.
- 제 50 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하고,상기 도전체 박막층은 상기 도너가 첨가된 도전성 고분자 화합물을 포함하는, 유기 전계발광 소자.
- 제 33 항에 있어서, 상기 기능성 유기 박막층은 쌍극성의 유기 화합물로 이루어진, 유기 태양전지.
- 제 52 항에 있어서, 상기 쌍극성의 유기 화합물은 π공역계를 가지는 고분자 화합물을 포함하고,상기 도전체 박막층은 상기 도너가 첨가된 도전성 고분자 화합물을 포함하는, 유기 태양전지.
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