JP6293699B2 - 蒸発器配送アンプル - Google Patents
蒸発器配送アンプル Download PDFInfo
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- JP6293699B2 JP6293699B2 JP2015079307A JP2015079307A JP6293699B2 JP 6293699 B2 JP6293699 B2 JP 6293699B2 JP 2015079307 A JP2015079307 A JP 2015079307A JP 2015079307 A JP2015079307 A JP 2015079307A JP 6293699 B2 JP6293699 B2 JP 6293699B2
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- 239000003708 ampul Substances 0.000 title claims description 85
- 239000000463 material Substances 0.000 claims description 72
- 239000007787 solid Substances 0.000 claims description 59
- 239000012159 carrier gas Substances 0.000 claims description 57
- 239000007789 gas Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XUAZJHGVVIBHFU-UHFFFAOYSA-N [Ti]C1=CC=CC1.C1=CC=CC=CC=C1 Chemical compound [Ti]C1=CC=CC1.C1=CC=CC=CC=C1 XUAZJHGVVIBHFU-UHFFFAOYSA-N 0.000 claims description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 125000002524 organometallic group Chemical group 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 claims description 3
- QJXLIDXWUXDHMK-UHFFFAOYSA-N titanium(2+);diazide Chemical compound [Ti+2].[N-]=[N+]=[N-].[N-]=[N+]=[N-] QJXLIDXWUXDHMK-UHFFFAOYSA-N 0.000 claims description 3
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims 4
- GYURACLPSSTGPA-UHFFFAOYSA-N C1(C=CC=C1)[Ti]C1=CC=CC=CC1 Chemical compound C1(C=CC=C1)[Ti]C1=CC=CC=CC1 GYURACLPSSTGPA-UHFFFAOYSA-N 0.000 claims 2
- 229910021617 Indium monochloride Inorganic materials 0.000 claims 2
- 229910007926 ZrCl Inorganic materials 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims 2
- 239000013212 metal-organic material Substances 0.000 claims 2
- 239000002243 precursor Substances 0.000 description 25
- 239000007788 liquid Substances 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 238000000859 sublimation Methods 0.000 description 11
- 230000008022 sublimation Effects 0.000 description 11
- 239000000376 reactant Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 150000004696 coordination complex Chemical class 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UYHCMHBPNSWPMT-UHFFFAOYSA-N C1(=CC=CC=CC1)[Ti] Chemical compound C1(=CC=CC=CC1)[Ti] UYHCMHBPNSWPMT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005243 fluidization Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material using a porous body
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C11/00—Use of gas-solvents or gas-sorbents in vessels
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C3/00—Vessels not under pressure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C3/00—Vessels not under pressure
- F17C3/02—Vessels not under pressure with provision for thermal insulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2203/00—Vessel construction, in particular walls or details thereof
- F17C2203/03—Thermal insulations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Description
本発明は蒸発器に関し、より詳細には、たとえば、化学気相成長(CVD)法、原子層化学気相成長(ALCVD)法およびイオン注入法において用いられる液体および固体ソース試薬などの液体および固体材料の蒸発のために、拡大した表面積を提供する多数の容器を有する蒸発器配送システムに関する。
化学気相成長法(CVD)は、半導体ウエハ処理において、フィルムおよび被膜の前処理用として広範に用いられてきた。CVDは、たとえば、比較的迅速な処理時間において、非常にコンフォーマルで高質なフィルムを提供するその能力のために、多くの点で好まれている堆積法である。さらに、CVDは、深いコンタクトおよび他の開口部に関してさえも、非常にコンフォーマルなフィルムを提供することを始めとして、不整な形状の基板を被膜するのに有益である。
本発明は、半導体製造用途のために特定の有用性を有する固体および液体ケミカルソースを蒸発させるための蒸発器システムおよび方法に関する。
a)可蒸発ソース材料を保持するための少なくとも1つの容器と、
b)容器に配置された複数の孔付き突出部であって、可蒸発ソース材料が通過するための通路を提供する孔付き突出部と、
c)容器を通過するためのキャリヤガスストリームを導入するキャリヤガス管と、
を備える。
a)アンプル底部と、側壁と、着脱自在の上端部とを含み、内部アンプル室を形成するアンプルと、
b)アンプルに連通して結合したガス入口およびガス出口と、
c)内部アンプル室内に配置された少なくとも1つの容器であって、容器底部および側壁を含み、容器キャビティを形成する容器と、
d)少なくとも容器底部に配置され、容器底部を通して通路を提供する複数の孔付き突出部であって、容器キャビティ内に延伸する孔付き突出部と、
を備える。
a)各容器がソース材料を保持するためのキャビティを有している複数の垂直に積重された容器と、
b)垂直に積重された容器のそれぞれに配置され、各それぞれのキャビティ内に延伸する複数の孔付き突出部であって、近接し垂直に積重された容器間に、キャリヤガスが通過するための通路を形成する孔付き突出部と、
c)複数の垂直に積重された容器と接触し、かつ各垂直に積重された容器のキャビティを通して延伸するキャリヤガス管と、
を備える。
a)アンプル底部およびアンプル側壁を有して、内室を形成するアンプルと、
b)内室を密閉するアンプル上端部と、
c)アンプル上端部に連通して結合したガス入口および出口と、
d)内室内に配置された、複数の垂直に積重され接触している容器であって、各容器が、容器底部および容器側壁を含み、固体前駆体材料を保持するための容器キャビティを形成し、各容器側壁が、アンプル側壁と接触している容器と、
e)各容器底部に配置され、かつ、近接し垂直に積重され接触している容器間に通路を提供する複数の孔付き突出部であって、容器キャビティ内に延伸する孔付き突出部と、
f)内室内に配置され、かつキャリヤガスを垂直に積重され接触している容器の下へ導くために、ガス入口に連通されているキャリヤガス浸漬管と、
g)アンプルを加熱するための手段と、
を備える。
a)蒸発可能ソース材料を自身に含む複数の相互接続され垂直に積重された容器を提供することであって、相互接続され垂直に積重された容器のそれぞれが、複数の通路付き突出部を含むことと、
b)相互接続され垂直に積重された容器を、封止可能アンプル内に配置することと、
c)封止可能アンプル内のソース材料を蒸発させるのに十分な量で、封止可能アンプルに熱を印加することと、
d)蒸発されたソース材料を、封止可能アンプルを通してプロセスチャンバに移動させるために、キャリヤガスを封止可能アンプルに導入することと、
を含む。
本発明は、次の知見に基づいている。すなわち、蒸発器システムで用いられるある一定のソース材料は、典型的な堆積用途に必要とされるフローレートを満たすのに十分な量で適切に蒸発されないということである。場合によっては、必要なフローレートを達成するために、200℃を超える高温を用いて、ソース材料の分解を引き起こす可能性のある昇華速度を増加した。
図1に示すような、本発明のアンプル内に積重された5つの容器を有する容器ユニットを含む本発明の蒸発器をテストし、アンプルから容器への熱伝導性の有効性を判定した。アンプルは、良質なステンレス鋼で製造され、アンプル周囲の回りにぴったり合う形状を有するブロックヒータに接続された。ヒータは、可変AC電圧源でありかつ加熱の程度を制御する可変トランスに接続された。アンプル内に配置された個別容器のいくつか、すなわち、容器1および5が、加熱の均一性およびアンプルから容器への熱移動の有効性を判定するために、温度センサに接続された。アンプルに導入され、かつ約500sccmで容器ユニットを通過するキャリヤガスのソースに、アンプルを接続した。図7に示すように、アンプルに装着されたヒータの温度が上昇するにつれて、容器で検知された内部温度もまた、熱伝導の有効性に応じて上昇した。容器1および5で検知された温度は、アンプルの温度と同等であり、容器の積重を通した加熱の均一性を示した。かくして、個別容器は、前駆体材料を蒸発させるために均一に加熱される追加表面積を提供する。
Claims (16)
- アンプル上端部とアンプル側壁とを有し、内部が密閉されるアンプルと、
前記アンプル上端部に接続されたガス出口と、
前記ガス出口まで通って流れるために前記内部にガスを導入するガス入口と、
前記内部内に配置されて、互いに接触しつつ垂直に積重された複数の容器であって、各容器は、ガスが通って流れるとともに固体可蒸発材料を保持する多孔面、及び、前記アンプル側壁に接触する側壁を備える、複数の容器と、を備え、
前記アンプル側壁を加熱することによって、前記アンプル側壁と前記容器の前記側壁との接触を介して前記アンプル側壁から各前記容器の前記側壁に熱が伝導される、蒸発装置。 - 前記多孔面はフリットを備える、請求項1に記載の蒸発装置。
- 前記多孔面は、1〜100μmの範囲のサイズの孔を備える、請求項2に記載の蒸発装置。
- 前記アンプルは、前記内部内で下向きに延在して前記ガス入口に連通して接続された内部ガス運搬管を含む、請求項1に記載の蒸発装置。
- 前記容器上に固体可蒸発材料を含む、請求項1に記載の蒸発装置。
- 前記固体可蒸発材料は固体金属有機材料を含む、請求項5に記載の蒸発装置。
- 前記固体可蒸発材料は、ホウ素(B)、燐(P)、銅(Cu)、ガリウム(Ga)、ヒ素(As)、インジウム(In)、アンチモン(Sb)、デカボラン(B10H14)、四塩化ハフニウム(HfCl4)、四塩化ジルコニウム(ZrCl4)、三塩化インジウム(InCl3)、有機金属β−ジケトン錯体、シクロペンタジエニルシクロヘプタトリエニル−チタン(CpTiChT)、三塩化アルミニウム(AlCl3)、ヨウ化チタン(TixIy)、シクロオクタテトラエンシクロ−ペンタジエニルチタン((Cot)(Cp)Ti)、ビスシクロペンタジエニルチタンジアジド、及び、タングステンカルボニル(Wx(CO)y)のうちの少なくとも1つを含む、請求項5に記載の蒸発装置。
- 前記ガス入口は前記アンプル上端部に接続され、前記ガス入口は、第1ガスソースからガスを受け取り、前記ガス出口は、蒸発状態の前記固体可蒸発材料を利用する下流の堆積システムに連通して連結される、請求項1に記載の蒸発装置。
- 前記ガス入口は前記アンプル上端部に接続され、前記アンプル上端部は、その上に装着されて前記ガス入口に連結された流入ガス流制御バルブを有しており、前記アンプル上端部は、その上に装着されて前記ガス出口に連結された流出ガス流制御バルブを有する、請求項1に記載の蒸発装置。
- 使用のために固体可蒸発材料の蒸気を供給する方法であって、当該方法は、
前記固体可蒸発材料を前記容器上に備える請求項1に記載の蒸発装置を加熱し、それによって前記固体可蒸発材料に熱を伝達して前記固体可蒸発材料の少なくとも一部を蒸発させ、前記固体可蒸発材料の蒸気を形成するステップと、
前記アンプルから前記ガス出口に前記蒸気を排出するステップと、を含む方法。 - 前記ガス入口を通じて前記アンプルにキャリアガスを供給するステップと、
前記ガス出口に前記蒸気とともに前記キャリアガスを排出するステップと、をさらに含む、請求項10に記載の方法。 - 前記固体可蒸発材料の前記蒸気に半導体基板を接触させて、前記半導体基板上にフィルムを形成するステップをさらに含む、請求項10に記載の方法。
- 前記フィルムを備える前記半導体基板を処理して半導体製品を形成するステップをさらに含む、請求項12に記載の方法。
- 前記固体可蒸発材料は固体金属有機材料を含む、請求項10〜13のいずれか1項に記載の方法。
- 前記固体可蒸発材料は、ホウ素(B)、燐(P)、銅(Cu)、ガリウム(Ga)、ヒ素(As)、インジウム(In)、アンチモン(Sb)、デカボラン(B10H14)、四塩化ハフニウム(HfCl4)、四塩化ジルコニウム(ZrCl4)、三塩化インジウム(InCl3)、有機金属β−ジケトン錯体、シクロペンタジエニルシクロヘプタトリエニル−チタン(CpTiChT)、三塩化アルミニウム(AlCl3)、ヨウ化チタン(TixIy)、シクロオクタテトラエンシクロ−ペンタジエニルチタン((Cot)(Cp)Ti)、ビスシクロペンタジエニルチタンジアジド、及び、タングステンカルボニル(Wx(CO)y)のうちの少なくとも1つのを含む、請求項10〜13のいずれか1項に記載の方法。
- 前記固体可蒸発材料は、前記加熱するステップに先立って、溶融状態の前記固体可蒸発材料を塗布した後に前記固体可蒸発材料を冷却することによって前記容器上に被膜されている、又は、前記固体可蒸発材料の溶剤溶液を塗布した後に溶剤を除去することによって前記容器上に被膜されている、請求項10〜15のいずれか1項に記載の方法。
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