JP6133954B2 - ガスと蒸発材料との接触を促進するのを助ける方法及び装置 - Google Patents
ガスと蒸発材料との接触を促進するのを助ける方法及び装置 Download PDFInfo
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- JP6133954B2 JP6133954B2 JP2015190933A JP2015190933A JP6133954B2 JP 6133954 B2 JP6133954 B2 JP 6133954B2 JP 2015190933 A JP2015190933 A JP 2015190933A JP 2015190933 A JP2015190933 A JP 2015190933A JP 6133954 B2 JP6133954 B2 JP 6133954B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
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Description
本特許出願は、「蒸発器送出アンプル(VAPORIZER DELIVERY AMPOULE)」と題された、米国特許出願第10/201,518号明細書(2002年7月23日出願)の一部継続出願である。米国特許出願第10/201,518号明細書は、参照により本明細書に組み込まれている。
この特許出願に記述した1つ以上の実施形態は、蒸発器の分野に関するものである。
蒸発器が、たとえば、工作物全体に薄膜を形成させる化学気相成長法(CVD)設備、又は工作物内に噴射するために工作物の方にイオンを加速させるイオン注入機などの、半導体処理設備の処理槽にキャリヤガス内の材料を送出するのに使用されることがある。
少なくとも1つの開示されている装置が、容器と、ガスと蒸発材料との接触を促進するのを助けるよう増大した露出表面積を有する容器内の材料を支えるのを助けるための構造とを有する。少なくとも1つの開示されている装置の構造が、材料が構造に置かれている時と同じ形態で材料が蒸発するよう支えるのを助けることがある。
図1は、1つ以上の実施形態について、蒸発器110から蒸発器110に結合された処理設備120に所望のガスを送出するシステム100を示している。蒸発器110は、材料を蒸発させ、蒸発器110に結合されたガス源130からガスを受けとり、受けとられたガスと蒸発材料との接触から生じたガスを処理設備120に送出するのを助ける。蒸発器110は、受けとられたガスと蒸発材料との接触を促進するのを助けるよう、蒸発すべき材料の露出表面積を増加させるのを助けるために、蒸発すべき材料を支える。
図2のブロック202について、蒸発すべき材料が、蒸発すべき材料の露出表面積を増加させるのを助けるよう、蒸発器110の容器内で支えられる。
1つ以上の実施形態の蒸発器110が、材料の露出表面積を増加させるのを助けるよう材料を支えるのを助けるための1つ以上の支持面を画定する、1つ以上のホルダを備えた容器を備えることがある。図3は、一実施形態の例について、各支持面311、321、331、341、351、及び361を画定する、複数のホルダ310、320、330、340、350、及び360を備えた容器300を示している。
ガスが、任意の好適な場所で、容器の1つ以上の内部領域内に任意の好適な流量で導入されることがある。1つ以上の実施形態のガスが、内部領域内の別の端部の方に流れるよう、内部領域内の一方の端部又はこの近くの容器の内部領域内に導入されることがある。
導入されたガスが、導入されたガスと蒸発する材料との接触時間を増加させるのを助けるために、容器の内部領域の端部面によって及び/又は内部領域内の1つ以上のホルダによって支えられた材料全体に及び/又はここを通って流れるよう、任意の好適な方法で方向付けられることがある。このため、内部領域内の材料の蒸発速度のばらつき及び/又は蒸発材料の濃度のばらつきがある場合にも、導入されたガスが蒸発材料に接触する可能性が高くなる。
蒸発すべき材料を支える1つ以上のホルダが、画定される、位置決めされる、及び/又は結合される容器は、任意の好適な方法で任意の好適なガス源から任意の好適なガスを受けとるよう結合され、容器内の材料が蒸発するのを助けるよう任意の好適な加熱設備を使用して任意の好適な方法で加熱され、受けとられたガスと蒸発材料との接触から生じたガスを、たとえば任意の好適な処理設備に、任意の好適な方法で送出するよう結合されることがある。
Claims (10)
- 内部容積を囲む熱伝導性の容器壁を有する容器と、
前記内部容積にガスを供給するように構成されたガス入口と、
前記内部容積から、蒸発材料を運ぶガスを受け取るように構成されたガス出口と、
前記容器内に異なるレベルで配置された複数の固体材料ホルダであって、当該固体材料ホルダ上に蒸発固体原材料が支持され、各前記固体材料ホルダの固体材料の支持面は複数のガス流通路を規定する、複数の固体材料ホルダと、
前記容器内の蒸発固体原材料であって、(i)蒸発原材料粉末、(ii)蒸発原材料凝集粒子、(iii)蒸発原材料結晶体、及び、(iv)蒸発原材料薄膜のうちから選択された前記蒸発原材料の少なくとも2つの形態で存在する蒸発固体原材料と、を備える蒸発器。 - 前記蒸発固体原材料は、蒸発原材料粉末の形態と蒸発原材料凝集粒子の形態とで存在する、請求項1に記載の蒸発器。
- 前記蒸発固体原材料は、蒸発原材料粉末の形態と蒸発原材料膜の形態とで存在する、請求項1に記載の蒸発器。
- 前記蒸発固体原材料は、蒸発原材料粉末の形態と蒸発原材料結晶体の形態とで存在する、請求項1に記載の蒸発器。
- 前記容器は第1端部を有し、前記ガス入口は前記第1端部に沿って配置され、前記ガス出口は前記第1端部に沿って配置される、請求項1に記載の蒸発器。
- 各固体材料ホルダは前記容器内に取り外し可能に挿入可能である、請求項1に記載の蒸発器。
- 前記容器は、前記内側容積内で下方に延在する管であって、前記ガス入口に連通接続された管を含む、請求項1に記載の蒸発器。
- 前記容器壁に熱を供給するように構成された加熱素子をさらに備える、請求項1に記載の蒸発器。
- 前記蒸発材料が、ホウ素(B)、亜リン酸(P)、銅(Cu)、ガリウム(Ga)、ヒ素(As)、ルテニウム(Ru)、インジウム(In)、アンチモン(Sb)、ランタン(La)、タンタル(Ta)、イリジウム(Ir)、デカボラン(B10H14)、四塩化ハフニウム(HfCl4)、四塩化ジルコニウム(ZrC14)、三塩化インジウム(InCl3)、有機金属β-ジケトネート複合体、シクロペンタジエニルシクロヘプタトリエニルチタン(CpTiChT)、三塩化アルミニウム(A1Cl3)、ヨウ化チタン(TixIy)、シクロオクタテトラエンシクロペンタジエニルチタン((Cot)(Cp)Ti)、ビス(シクロペンタジエニル)チタンジアジド、タングステンカルボニル(Wx(CO)y)、ビス(シクロペンタジエニル)ルテニウム(II)(Ru(Cp)2)、及び三塩化ルテニウム(RuCl3)の少なくとも1つを含む、請求項1に記載の蒸発器。
- 前記容器は、前記容器を密閉するように構成された蓋を含む、請求項1に記載の蒸発器。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/858,509 US7300038B2 (en) | 2002-07-23 | 2004-06-01 | Method and apparatus to help promote contact of gas with vaporized material |
| US10/858,509 | 2004-06-01 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012262401A Division JP2013049926A (ja) | 2004-06-01 | 2012-11-30 | ガスと蒸発材料との接触を促進するのを助ける方法及び装置 |
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| Publication Number | Publication Date |
|---|---|
| JP2016000866A JP2016000866A (ja) | 2016-01-07 |
| JP6133954B2 true JP6133954B2 (ja) | 2017-05-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2007515504A Expired - Lifetime JP5342139B2 (ja) | 2004-06-01 | 2005-06-01 | ガスと蒸発材料との接触を促進する方法及び装置 |
| JP2012262401A Pending JP2013049926A (ja) | 2004-06-01 | 2012-11-30 | ガスと蒸発材料との接触を促進するのを助ける方法及び装置 |
| JP2015190933A Expired - Lifetime JP6133954B2 (ja) | 2004-06-01 | 2015-09-29 | ガスと蒸発材料との接触を促進するのを助ける方法及び装置 |
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| JP2007515504A Expired - Lifetime JP5342139B2 (ja) | 2004-06-01 | 2005-06-01 | ガスと蒸発材料との接触を促進する方法及び装置 |
| JP2012262401A Pending JP2013049926A (ja) | 2004-06-01 | 2012-11-30 | ガスと蒸発材料との接触を促進するのを助ける方法及び装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US7300038B2 (ja) |
| EP (2) | EP1750833B1 (ja) |
| JP (3) | JP5342139B2 (ja) |
| KR (2) | KR101181011B1 (ja) |
| CN (3) | CN1993172A (ja) |
| AT (1) | ATE530249T1 (ja) |
| SG (3) | SG158097A1 (ja) |
| WO (1) | WO2005118119A1 (ja) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7556244B2 (en) | 2009-07-07 |
| JP2013049926A (ja) | 2013-03-14 |
| EP2363199A1 (en) | 2011-09-07 |
| WO2005118119A1 (en) | 2005-12-15 |
| KR101247824B1 (ko) | 2013-03-26 |
| CN103031542B (zh) | 2015-11-25 |
| SG179494A1 (en) | 2012-04-27 |
| KR101181011B1 (ko) | 2012-09-07 |
| EP1750833A4 (en) | 2008-04-02 |
| SG10201507473RA (en) | 2015-10-29 |
| CN103028270A (zh) | 2013-04-10 |
| US20080057218A1 (en) | 2008-03-06 |
| CN103028270B (zh) | 2015-10-28 |
| JP2016000866A (ja) | 2016-01-07 |
| US7487956B2 (en) | 2009-02-10 |
| CN103031542A (zh) | 2013-04-10 |
| KR20070035527A (ko) | 2007-03-30 |
| JP2008501507A (ja) | 2008-01-24 |
| US20080041310A1 (en) | 2008-02-21 |
| JP5342139B2 (ja) | 2013-11-13 |
| ATE530249T1 (de) | 2011-11-15 |
| KR20120032579A (ko) | 2012-04-05 |
| EP1750833A1 (en) | 2007-02-14 |
| US20050006799A1 (en) | 2005-01-13 |
| CN1993172A (zh) | 2007-07-04 |
| SG158097A1 (en) | 2010-01-29 |
| EP1750833B1 (en) | 2011-10-26 |
| US7300038B2 (en) | 2007-11-27 |
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