JP4922286B2 - イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 - Google Patents
イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 Download PDFInfo
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- JP4922286B2 JP4922286B2 JP2008501921A JP2008501921A JP4922286B2 JP 4922286 B2 JP4922286 B2 JP 4922286B2 JP 2008501921 A JP2008501921 A JP 2008501921A JP 2008501921 A JP2008501921 A JP 2008501921A JP 4922286 B2 JP4922286 B2 JP 4922286B2
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J7/00—Apparatus for generating gases
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00094—Jackets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00139—Controlling the temperature using electromagnetic heating
- B01J2219/00141—Microwaves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00139—Controlling the temperature using electromagnetic heating
- B01J2219/00146—Infrared radiation
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- Materials Engineering (AREA)
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- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Sampling And Sample Adjustment (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Devices For Use In Laboratory Experiments (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (17)
- イオン注入システムであって、
(a)稼働中に汚染されてその性能を維持するための洗浄を必要とする、1500ポンド/平方インチ以上の偶発的過剰圧力に耐えることができる試薬供給容器を保持するように構成されたガスボックスを含むイオン注入装置と、
(b)前記ガスボックス内に固体原料試薬供給容器を有するXeF2化学物質の供給源と、を備え、
前記試薬供給容器は、固体XeF2が入っている内部容積を含み、前記試薬供給容器内の前記固体XeF2からのXeF2蒸気をイオン注入装置にその洗浄のために送出するように構成されるとともに、前記固体XeF2を支えるために前記内部容積内に追加表面領域構造物を含み、かつ、1500ポンド/平方インチ以上の偶発的過剰圧力に耐えることができるように構成され、
前記試薬供給容器の前記内部容積内の前記追加表面領域構造物は、前記容器の内径にほぼ等しい直径を有する金属発泡体を有し、前記固体XeF2は、前記金属発泡体の孔に収容された固体XeF2粒子を含み、
前記供給源は、前記XeF 2 蒸気を送出するために前記試薬供給容器に取り付けられた少なくとも2の弁流量係数C V を有する弁をさらに有する、
イオン注入システム。 - 前記試薬供給容器は、異なる物質の構造用コンポーネントを備え、前記構造用コンポーネントは、互いに爆発圧着される、
請求項1に記載のイオン注入システム。 - 前記異なる物質は、アルミニウムおよびスチールを含む、
請求項2に記載のイオン注入システム。 - イオン注入装置の洗浄用のフッ素化学物質供給源であって、
内部容積を含む固体原料試薬供給容器と、
固体フッ素原料物質を保持するための金属発泡体と、を備え、
前記金属発泡体は、前記内部容積の内部壁面と接触する形状をなすとともに、前記容器の内径にほぼ等しい直径を有し、これにより周囲条件において前記金属発泡体は、熱を前記固体フッ素原料物質に伝達して昇華させ、前記固体フッ素原料物質は、前記金属発泡体の孔に収容された固体XeF 2 粒子を含み、
XeF 2 蒸気を送出するために前記容器に取り付けられた少なくとも2の弁流量係数C V を有する弁を備える、
フッ素化学物質供給源。 - 前記金属発泡体は、アルミニウム発泡体を含む、
請求項4に記載のフッ素化学物質供給源。 - 前記金属発泡体は、金属発泡体材料の円板の積層配列を中に含む、
請求項4に記載のフッ素化学物質供給源。 - 前記弁は、2.7〜2.9の範囲の弁流量係数を有するとともに、互いに直角な入口通路及び出口通路を有する、
請求項4に記載のフッ素化学物質供給源。 - さらに、前記固体フッ素原料物質からの蒸気を前記イオン注入装置に洗浄のために供給する、前記試薬供給容器に結合され且つ前記試薬供給容器を蒸気供給関係にて前記イオン注入装置と接続する流体回路を備える、
請求項4に記載のフッ素化学物質供給源。 - 前記試薬供給容器および流体回路は、前記蒸気が前記流体回路内で凝結しないように構成される、
請求項8に記載のフッ素化学物質供給源。 - 前記流体回路は、流量計装、センサ、移動流体駆動装置、質量流量調節器、圧力変換器、サージタンク、ポンプ、圧縮機、流量調節弁の中から選択される流量調節ユニットを含む、
請求項9に記載のフッ素化学物質供給源。 - 室温(25℃)付近またはそれよりも低い温度で前記固体フッ素原料物質から蒸気を送出するように構成されている固体フッ素原料物質を含む、
請求項4に記載のフッ素化学物質供給源。 - 前記試薬供給容器が20℃から30℃までの範囲内の温度に維持するように構成されている、
請求項4に記載のフッ素化学物質供給源。 - 前記試薬供給容器はアルミニウムで形成されており、前記金属発泡体はアルミニウムで形成されている、
請求項4に記載のフッ素化学物質供給源。 - 前記容器は、スチールで形成された第1の部品およびアルミニウムで形成された第2の部品を含む構造用部品を備え、前記第1および第2の部品は、互いに爆発圧着されている、
請求項4に記載のフッ素化学物質供給源。 - 前記第1の部品は、ステンレススチール製のフランジ部材である、
請求項14に記載のフッ素化学物質供給源。 - イオン注入装置を洗浄するための二フッ化キセノン供給方法であって、
容器の囲まれた内部容積内に配置された多孔質アルミニウム発泡体の孔に、固体XeF2 粒子を貯蔵することと、
前記多孔質アルミニウム発泡体の孔に貯蔵されている前記固体XeF2 粒子からXeF2蒸気を発生させることと、
少なくとも2の弁流量係数C V を有する弁を通して前記容器から前記XeF 2 蒸気を放出することと、
前記XeF2蒸気を前記イオン注入装置内に流入させて前記イオン注入装置を洗浄することと、を含み、
前記アルミニウム発泡体は、前記容器の内径にほぼ等しい直径を有する、
方法。 - 前記容器は、前記イオン注入装置のガスボックス内に配置されたアルミニウム容器を含む、
請求項16に記載の方法。
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66251505P | 2005-03-16 | 2005-03-16 | |
| US66239605P | 2005-03-16 | 2005-03-16 | |
| US60/662,515 | 2005-03-16 | ||
| US60/662,396 | 2005-03-16 | ||
| PCT/US2006/008530 WO2006101767A2 (en) | 2005-03-16 | 2006-03-09 | System for delivery of reagents from solid sources thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011263316A Division JP5265750B2 (ja) | 2005-03-16 | 2011-12-01 | イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2008538158A JP2008538158A (ja) | 2008-10-09 |
| JP2008538158A5 JP2008538158A5 (ja) | 2009-04-23 |
| JP4922286B2 true JP4922286B2 (ja) | 2012-04-25 |
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| JP2008501921A Expired - Fee Related JP4922286B2 (ja) | 2005-03-16 | 2006-03-09 | イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 |
| JP2011263316A Expired - Fee Related JP5265750B2 (ja) | 2005-03-16 | 2011-12-01 | イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 |
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| JP2011263316A Expired - Fee Related JP5265750B2 (ja) | 2005-03-16 | 2011-12-01 | イオン注入システム及びフッ素化学物質供給源並びに二フッ化キセノン供給方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20080191153A1 (ja) |
| EP (1) | EP1866074A4 (ja) |
| JP (2) | JP4922286B2 (ja) |
| KR (2) | KR101300266B1 (ja) |
| CN (1) | CN101495190B (ja) |
| SG (1) | SG160401A1 (ja) |
| TW (2) | TW200700141A (ja) |
| WO (1) | WO2006101767A2 (ja) |
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| US20070194470A1 (en) * | 2006-02-17 | 2007-08-23 | Aviza Technology, Inc. | Direct liquid injector device |
| US20080142039A1 (en) * | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
-
2006
- 2006-03-09 JP JP2008501921A patent/JP4922286B2/ja not_active Expired - Fee Related
- 2006-03-09 SG SG201001786-1A patent/SG160401A1/en unknown
- 2006-03-09 CN CN2006800167770A patent/CN101495190B/zh not_active Expired - Fee Related
- 2006-03-09 KR KR1020127000961A patent/KR101300266B1/ko not_active Expired - Lifetime
- 2006-03-09 WO PCT/US2006/008530 patent/WO2006101767A2/en not_active Ceased
- 2006-03-09 KR KR1020077023641A patent/KR101299791B1/ko not_active Expired - Lifetime
- 2006-03-09 US US11/908,964 patent/US20080191153A1/en not_active Abandoned
- 2006-03-09 EP EP06737686.3A patent/EP1866074A4/en not_active Withdrawn
- 2006-03-15 TW TW095108712A patent/TW200700141A/zh unknown
- 2006-03-15 TW TW102140367A patent/TWI436818B/zh not_active IP Right Cessation
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2011
- 2011-12-01 JP JP2011263316A patent/JP5265750B2/ja not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH01265511A (ja) * | 1988-04-15 | 1989-10-23 | Sumitomo Chem Co Ltd | 気相成長に用いる担体担持有機金属化合物及びこれを用いた気相成長用有機金属化合物供給装置 |
| JPH04333572A (ja) * | 1991-05-10 | 1992-11-20 | Chodendo Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai | 酸化物超電導体用mo原料の気化方法 |
| JPH10317169A (ja) * | 1997-05-13 | 1998-12-02 | Surface Technol Syst Ltd | 被加工物のエッチング方法とその装置 |
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| JP2004525253A (ja) * | 2000-09-19 | 2004-08-19 | ザクティクス・インコーポレイテッド | 半導体サンプルのエッチング装置及び昇華によるガスの供給源 |
| JP2004134741A (ja) * | 2002-06-17 | 2004-04-30 | Asm Internatl Nv | 反応物の昇華を制御するためのシステム |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070113290A (ko) | 2007-11-28 |
| KR101299791B1 (ko) | 2013-08-23 |
| CN101495190B (zh) | 2013-05-01 |
| SG160401A1 (en) | 2010-04-29 |
| EP1866074A2 (en) | 2007-12-19 |
| KR20120019508A (ko) | 2012-03-06 |
| JP2012052669A (ja) | 2012-03-15 |
| JP5265750B2 (ja) | 2013-08-14 |
| WO2006101767A3 (en) | 2009-04-09 |
| KR101300266B1 (ko) | 2013-08-23 |
| US20080191153A1 (en) | 2008-08-14 |
| TW201406453A (zh) | 2014-02-16 |
| WO2006101767A2 (en) | 2006-09-28 |
| CN101495190A (zh) | 2009-07-29 |
| JP2008538158A (ja) | 2008-10-09 |
| TW200700141A (en) | 2007-01-01 |
| TWI436818B (zh) | 2014-05-11 |
| EP1866074A4 (en) | 2017-01-04 |
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