JP6887688B2 - 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム - Google Patents
蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム Download PDFInfo
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- JP6887688B2 JP6887688B2 JP2019020583A JP2019020583A JP6887688B2 JP 6887688 B2 JP6887688 B2 JP 6887688B2 JP 2019020583 A JP2019020583 A JP 2019020583A JP 2019020583 A JP2019020583 A JP 2019020583A JP 6887688 B2 JP6887688 B2 JP 6887688B2
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- 239000002994 raw material Substances 0.000 title claims description 149
- 238000009834 vaporization Methods 0.000 title claims description 26
- 230000008016 vaporization Effects 0.000 title claims description 26
- 239000007787 solid Substances 0.000 title claims description 25
- 238000001704 evaporation Methods 0.000 claims description 125
- 230000008020 evaporation Effects 0.000 claims description 121
- 239000007789 gas Substances 0.000 claims description 80
- 239000012159 carrier gas Substances 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 150000002366 halogen compounds Chemical class 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000000231 atomic layer deposition Methods 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 238000006467 substitution reaction Methods 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims 1
- 239000000463 material Substances 0.000 description 27
- 238000005498 polishing Methods 0.000 description 21
- 238000005260 corrosion Methods 0.000 description 17
- 230000007797 corrosion Effects 0.000 description 17
- 239000012535 impurity Substances 0.000 description 14
- 239000010935 stainless steel Substances 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 4
- 229910000856 hastalloy Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910001026 inconel Inorganic materials 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- MAYVZUQEFSJDHA-UHFFFAOYSA-N 1,5-bis(methylsulfanyl)naphthalene Chemical compound C1=CC=C2C(SC)=CC=CC2=C1SC MAYVZUQEFSJDHA-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- HDGGAKOVUDZYES-UHFFFAOYSA-K erbium(iii) chloride Chemical compound Cl[Er](Cl)Cl HDGGAKOVUDZYES-UHFFFAOYSA-K 0.000 description 1
- NNMXSTWQJRPBJZ-UHFFFAOYSA-K europium(iii) chloride Chemical compound Cl[Eu](Cl)Cl NNMXSTWQJRPBJZ-UHFFFAOYSA-K 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- MEANOSLIBWSCIT-UHFFFAOYSA-K gadolinium trichloride Chemical compound Cl[Gd](Cl)Cl MEANOSLIBWSCIT-UHFFFAOYSA-K 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- ATINCSYRHURBSP-UHFFFAOYSA-K neodymium(iii) chloride Chemical compound Cl[Nd](Cl)Cl ATINCSYRHURBSP-UHFFFAOYSA-K 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000918 plasma mass spectrometry Methods 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- LHBNLZDGIPPZLL-UHFFFAOYSA-K praseodymium(iii) chloride Chemical compound Cl[Pr](Cl)Cl LHBNLZDGIPPZLL-UHFFFAOYSA-K 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- BHXBZLPMVFUQBQ-UHFFFAOYSA-K samarium(iii) chloride Chemical compound Cl[Sm](Cl)Cl BHXBZLPMVFUQBQ-UHFFFAOYSA-K 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GFISHBQNVWAVFU-UHFFFAOYSA-K terbium(iii) chloride Chemical compound Cl[Tb](Cl)Cl GFISHBQNVWAVFU-UHFFFAOYSA-K 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- CKLHRQNQYIJFFX-UHFFFAOYSA-K ytterbium(III) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Yb+3] CKLHRQNQYIJFFX-UHFFFAOYSA-K 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Description
容器壁を有する容器本体と、
前記容器本体に着脱自在に構成され、前記容器本体内にキャリアガスを導入するキャリアガス導入口及び蒸発した前記薄膜形成用金属ハロゲン化合物と前記キャリアガスとの混合ガスを外部に導出する混合ガス導出口を有する蓋体と、
前記容器本体と前記蓋体とを固定する締結部材と、
前記蓋体の前記キャリアガス導入口及び前記混合ガス導出口に配設された継手部材と、を備え、
前記容器本体の前記容器壁が、純度99〜99.9999%の銅、純度99〜99.9999%のアルミニウム、又は純度99〜99.9999%のチタンから構成され、
前記容器本体、前記蓋体、前記締結部材、及び前記継手部材のそれぞれには、フッ素樹脂コーティングが施されている、及び/又は、それぞれの表面に電解研磨が施されている、蒸発原料用容器。
一般式(1):MXn
(但し、前記一般式(1)において、Mは、Al、Hf、Zr、Ta、W、Ga、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Er、Tm及びYbのいずれかの元素を示す。Xは、ハロゲン元素を示す。nは、Xの価数である。)
前記バルブは、CV値(水置換)が0.2以上の真空バルブである、前記[1]〜[11]のいずれかに記載の蒸発原料用容器。
前記蒸発原料用容器内に貯留された前記蒸発原料としての前記薄膜形成用金属ハロゲン化合物と、を備え、
前記蓋体の前記キャリアガス導入口から前記キャリアガスを供給し、蒸発した前記薄膜形成用金属ハロゲン化合物と前記キャリアガスとを混合させた混合ガスを前記蓋体の前記混合ガス導出口から供給する、固体気化供給システム。
前記蒸発原料用容器内に、薄膜形成用金属ハロゲン化合物を投入し、
前記容器本体の前記容器壁を加熱して、前記容器本体内の前記薄膜形成用金属ハロゲン化合物を加熱するとともに、
前記蓋体の前記キャリアガス導入口からキャリアガスを導入し、加熱された前記容器壁の前記二重壁構造の前記内壁部材と前記外壁部材の間を経由させて、加熱された前記キャリアガスを前記容器本体内に導入し、
蒸発した前記薄膜形成用金属ハロゲン化合物と前記キャリアガスとを混合させて前記混合ガスを作製する、前記[13]又は[14]に記載の固体気化供給システム。
前記バルブは、CV値(水置換)が0.2以上の真空バルブである、前記[13]〜[15]のいずれかに記載の固体気化供給システム。
本発明の蒸発原料用容器の一の実施形態は、図1に示す蒸発原料用容器100である。
この蒸発原料用容器100は、蒸発原料としての薄膜形成用金属ハロゲン化合物Sを貯留し且つ蒸発させるための蒸発原料用容器100である。蒸発原料用容器100は、容器本体2と、蓋体4と、締結部材6と、継手部材8とを備えたものである。ここで、図1は、本発明の蒸発原料用容器の一の実施形態を模式的に示す断面図である。図2は、本発明の蒸発原料用容器の一の実施形態における、キャリアガスG1、蒸発した蒸発原料(即ち、蒸発した薄膜形成用金属ハロゲン化合物G2)、及び混合ガスG3のガス流れを説明するための模式的な断面図である。
直径250〜350mmの電極を用い、電流密度を28.5mA/cm2以下、電解溶液の濃度を15〜30質量%、液流量を1〜8L/分、電解溶液のpHをアルカリ性とし、更に、研磨条件としては、圧力20〜60kPa、回転数350rpm以下とし、砥粒として砥粒径0.020〜0.10μmの無機粒子を用いる。
(但し、上記一般式(2)において、Mは、Al、Hf、Zr、Ta、W、Ga、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Er、Tm及びYbのいずれかの元素を示す。Xは、ハロゲン元素を示す。nは、Xの価数である。)
本発明の蒸発原料用容器は、例えば、以下のように製造することができる。まず、従来公知の方法で、素材をくりぬき、又はロール状の加工物を溶接することによって、容器本体を構成する容器壁の外壁部材を作製する。その後、純度99〜99.9999%の銅、純度99〜99.9999%のアルミニウム、又は純度99〜99.9999%のチタンによって、容器本体を構成する容器壁の内壁部材を作製する。そして、外壁部材の内側に内壁部材を配置して、容器本体を作製する。また、容器本体に着脱自在に構成された蓋体を作製する。また、容器本体及び蓋体には、締結部材を配置するためのボルト挿入孔を形成し、このボルト挿入孔に適合した締結部材としてのボルト部材及びナット部材を用意する。また、蓋体のキャリアガス導入口及び混合ガス導出口に配置する各種の継手部材を用意する。このようにして、蒸発原料用容器を構成するための未処理の各部材を得る(準備工程)。
まず、図1及び図2に示すような蒸発原料用容器100のキャリアガス導入口16を、キャリアガスタンク(図示せず)と連結させ、更に、混合ガス導出口18を、半導体処理設備(不図せず)に連結させる。次に、蒸発原料用容器100内に、蒸発原料としての薄膜形成用金属ハロゲン化合物Sを投入し、その後、容器本体2を密閉状態とする。
次に、本発明の固体気化供給システムの一の実施形態について説明する。本実施形態の固体気化供給システムは、これまでに説明した本発明の蒸発原料用容器を用いた固体気化供給システムである。即ち、図1及び図2に示すような蒸発原料用容器100と、蒸発原料用容器100内に貯留された蒸発原料としての前記薄膜形成用金属ハロゲン化合物Sと、を備えたものである。本実施形態の固体気化供給システムは、容器本体2内にキャリアガスG1を供給するキャリアガス供給手段(図示せず)を更に備えていてもよい。本実施形態の固体気化供給システムは、蒸発原料用容器100の混合ガス導出口18の下流側に、混合ガスG3を貯留するためのバッファタンク(図示せず)を更に備えていてもよい。なお、バッファタンク(図示せず)は任意の構成要素であり、バッファタンク(図示せず)を有していなくともよい。この場合には、例えば、蒸発原料用容器100にて生成された混合ガスG3は、半導体処理設備等にそのまま供給される。
図1に示す蒸発原料用容器100のような、容器本体2と、蓋体4と、締結部材6と、継手部材8とを備えた蒸発原料用容器100を作製した。各実施例及び比較例において、蒸発原料用容器の容器本体の容器壁を、表1及び表2の「容器壁」の「材質」及び「純度(%)」に示すような材料によって作製した。また、容器本体、蓋体、締結部材、及び継手部材の表面を、下記の研摩条件(i)で研磨処理(電解研磨処理)を施した。その後、研磨処理が施された各部材の表面上に、フッ素樹脂コーティングを施した。フッ素樹脂コーティングは、電子照射真空蒸着法による蒸着を行う装置を用いてポリテトラフルオロエチレン(テフロン)を蒸着させることによって行った。
実施例16〜30においては、フッ素樹脂コーティングを施さないこと以外は、実施例1〜15と同様の方法で蒸発原料用容器を作製した。即ち、実施例16〜30の蒸発原料用容器は、容器本体、蓋体、締結部材、及び継手部材の表面に、上記の研摩条件(i)による研磨処理のみが施されたものである。なお、各実施例16〜30においては、蒸発原料用容器の容器本体の容器壁を、表3の「容器壁」の「材質」及び「純度(%)」に示すような材料によって作製した。
表4〜表6の結果から分かるように、実施例1〜30の蒸発原料用容器は、比較例1〜16の蒸発原料用容器に比べて、不純物の量が少ないことが分かる。また、実施例1〜30の蒸発原料用容器は、「内部表面粗さ」の「A/B」の値が1に近い値となり、成膜前後における表面粗さの差が小さいことが分かる。ここで、この表面粗さの差が小さいということは、蒸発原料による腐食の程度が少なかったことを表しており、耐腐食性が高いことが分かる。このような結果から、実施例1〜30の蒸発原料用容器は、耐腐食性に優れたものであることが分かる。また、実施例1〜30の蒸発原料用容器は、成長速度が速いという結果も得られた。
Claims (15)
- 蒸発原料としての薄膜形成用金属ハロゲン化合物を貯留し且つ蒸発させるための蒸発原料用容器であって、
容器壁を有する容器本体と、
前記容器本体に着脱自在に構成され、前記容器本体内にキャリアガスを導入するキャリアガス導入口及び蒸発した前記薄膜形成用金属ハロゲン化合物と前記キャリアガスとの混合ガスを外部に導出する混合ガス導出口を有する蓋体と、
前記容器本体と前記蓋体とを固定する締結部材と、
前記蓋体の前記キャリアガス導入口及び前記混合ガス導出口に配設された継手部材と、を備え、
前記容器壁は、内壁部材及び外壁部材によって構成された二重壁構造を有し、前記キャリアガス導入口から導入された前記キャリアガスが、前記二重壁構造の前記内壁部材と前記外壁部材の間を経由して前記容器本体内に導入され、
前記容器本体の前記容器壁が、純度99〜99.9999%の銅、純度99〜99.9999%のアルミニウム、又は純度99〜99.9999%のチタンから構成され、
前記容器本体、前記蓋体、前記締結部材、及び前記継手部材のそれぞれには、フッ素樹脂コーティングが施されている、及び/又は、それぞれの表面に電解研磨が施されている、蒸発原料用容器。 - 前記容器壁を構成する前記内壁部材の底面部に、前記内壁部材と前記外壁部材の間を経由した前記キャリアガスが前記容器本体に導入される容器内導入口を有する、請求項1に記載の蒸発原料用容器。
- 前記締結部材が、前記容器本体及び前記蓋体に設けられたボルト挿入孔に挿入されたボルト部材及び前記ボルト部材に螺合して締結したナット部材からなる、請求項1または2に記載の蒸発原料用容器。
- 前記容器本体内に懸架された、少なくとも1つの板状の棚部材を更に有する、請求項1〜3のいずれか一項に記載の蒸発原料用容器。
- 前記棚部材の少なくとも1つは、複数の貫通孔が形成されたシャワーヘッド構造を有する、請求項4に記載の蒸発原料用容器。
- 前記棚部材の少なくとも1つは、多孔質体によって構成されている、請求項4に記載の蒸発原料用容器。
- 前記容器本体内に、一の方向における最大長さが1〜30mmで、アルミニウム製又は銅製の、一以上の球状、長球状、葉状、螺旋状、又はその他不定形状の部材を更に有する、請求項1〜6のいずれか一項に記載の蒸発原料用容器。
- 前記蒸発原料としての前記薄膜形成用金属ハロゲン化合物が、下記一般式(1)で表される化合物である、請求項1〜7のいずれか一項に記載の蒸発原料用容器。
一般式(1):MXn
(但し、前記一般式(1)において、Mは、Al、Hf、Zr、Ta、W、Ga、La、Mg、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Er、Tm及びYbのいずれかの元素を示す。Xは、ハロゲン元素を示す。nは、Xの価数である。) - 化学気相成長法による成膜に用いられる、請求項1〜8のいずれか一項に記載の蒸発原料用容器。
- 原子層堆積法による成膜に用いられる、請求項1〜8のいずれか一項に記載の蒸発原料用容器。
- 前記混合ガス導出口よりも下流側のガス流路の一部に配設されたバルブを更に備え、
前記バルブは、CV値(水置換)が0.2以上の真空バルブである、請求項1〜10のいずれか一項に記載の蒸発原料用容器。 - 請求項1〜11のいずれか一項に記載の蒸発原料用容器と、
前記蒸発原料用容器内に貯留された前記蒸発原料としての前記薄膜形成用金属ハロゲン化合物と、を備え、
前記蓋体の前記キャリアガス導入口から前記キャリアガスを供給し、蒸発した前記薄膜形成用金属ハロゲン化合物と前記キャリアガスとを混合させた混合ガスを前記蓋体の前記混合ガス導出口から供給する、固体気化供給システム。 - 前記容器本体内に前記キャリアガスを供給するキャリアガス供給手段を更に備える、請求項12に記載の固体気化供給システム。
- 前記容器壁は、内壁部材及び外壁部材によって構成された二重壁構造を有し、
前記蒸発原料用容器内に、薄膜形成用金属ハロゲン化合物を投入し、
前記容器本体の前記容器壁を加熱して、前記容器本体内の前記薄膜形成用金属ハロゲン化合物を加熱するとともに、
前記蓋体の前記キャリアガス導入口からキャリアガスを導入し、加熱された前記容器壁の前記二重壁構造の前記内壁部材と前記外壁部材の間を経由させて、加熱された前記キャリアガスを前記容器本体内に導入し、
蒸発した前記薄膜形成用金属ハロゲン化合物と前記キャリアガスとを混合させて前記混合ガスを作製する、請求項12又は13に記載の固体気化供給システム。 - 前記混合ガス導出口よりも下流側の前記混合ガスのガス流路の一部に、前記ガス流路の開閉を行うバルブが配設され、
前記バルブは、CV値(水置換)が0.2以上の真空バルブである、請求項12〜14のいずれか一項に記載の固体気化供給システム。
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