JP5913888B2 - 気化器 - Google Patents
気化器 Download PDFInfo
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- JP5913888B2 JP5913888B2 JP2011216885A JP2011216885A JP5913888B2 JP 5913888 B2 JP5913888 B2 JP 5913888B2 JP 2011216885 A JP2011216885 A JP 2011216885A JP 2011216885 A JP2011216885 A JP 2011216885A JP 5913888 B2 JP5913888 B2 JP 5913888B2
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- partition
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- 239000006200 vaporizer Substances 0.000 title claims description 59
- 238000005192 partition Methods 0.000 claims description 105
- 239000011344 liquid material Substances 0.000 claims description 40
- 239000007788 liquid Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 description 15
- 230000008016 vaporization Effects 0.000 description 12
- 230000006399 behavior Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 238000009834 vaporization Methods 0.000 description 10
- 125000002524 organometallic group Chemical group 0.000 description 8
- 238000011144 upstream manufacturing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000005587 bubbling Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Description
実施例では、図1に示した液体材料気化供給システムと同様のシステムを用い、気化器内に図2〜4に示した形状の格子状隔壁構造体を収容した。格子状隔壁構造体は、0.5mm厚のステンレス板で形成し、格子間隔(格子一区画の一辺の長さ)を3.6mm、高さ寸法を2.5cm、液流通部を構成する切り欠き凹部の高さ寸法を1mmとした。液体材料してTMGa(トリメチルガリウム)を用いた。圧送用ガス(窒素ガス)の圧力は絶対圧200kPaに設定した。気化器内の温度が75℃になるように加熱装置を制御した。圧力調整式流量制御装置の下流側圧力は1.8Torrに設定され、圧力調整式流量制御装置により流量を56sccmに制御した。気化器内の液体のTGMaが減少して気化器内の圧力が設定閾値圧力110kPa(絶対圧)になると、液体材料容器内のTMGaを5秒間、気化器に圧送するように制御した。気化器内の圧力(P0)と気化器第1室の外側下面温度の時間変化をモニターした結果を図5のグラフに示す。
比較例は、格子状隔壁構造体を備えない以外は上記の実施例と同じ条件とした。比較例の気化器内の圧力と気化室(第1室)の外側下面温度の時間変化を図6のグラフに示す。
13 隔壁構造体
16,17,18,19 隔壁プレート
16a,17a 第1のスリット
18a,19a 第2のスリット
20 液流通部
Claims (7)
- 液体材料の流入口及び液体材料の気化ガスの流出口を備えるチャンバーと、
該チャンバー内に収容される液体材料を加熱する加熱装置と、
該チャンバー内に収容される液体材料を複数の区画に区分けする隔壁構造体と、
前記隔壁構造体で区分けされた各区画間の液流通を許容する液流通部と、を備え、
前記隔壁構造体は、格子状、ハニカム状、メッシュ状、又は、パイプ状の隔壁を有し、
前記チャンバーは、該チャンバー内の前記隔壁構造体より上側に、前記流出口と連通し気化ガスを収容するための空間を有することを特徴とする気化器。 - 前記液流通部は、前記隔壁構造体の下端に形成された切り欠き部であることを特徴とする請求項1に記載の気化器。
- 前記隔壁構造体は、複数枚の隔壁プレートを交差状に連結することにより形成されることを特徴とする請求項1または2に記載の気化器。
- 前記隔壁プレートは第1の隔壁プレートと第2の隔壁プレートとを含み、前記第1の隔壁プレートは、上端から下方へ延びる第1のスリットを有し、該第1のスリットに前記第2の隔壁プレートを挿し込むことによって該第2の隔壁プレートと連結されることを特徴とする請求項3に記載の気化器。
- 前記隔壁プレートは第1の隔壁プレートと第2の隔壁プレートとを含み、前記第2の隔壁プレートは、下端から上方へ延びる第2のスリットを有し、該第2のスリットに前記第1の隔壁プレートを挿し込むことによって該第1の隔壁プレートと連結されることを特徴とする請求項3に記載の気化器。
- 前記隔壁プレートは第1の隔壁プレートと第2の隔壁プレートとを含み、前記第1の隔壁プレートは上端から下方へ延びる第1のスリットを有し、前記第2の隔壁プレートは下端から上方へ延びる第2のスリットを有し、前記第1のスリットの下端に前記第2のスリットを挿し込むことにより、前記第1の隔壁プレートと前記第2の隔壁プレートとが連結されることを特徴とする請求項3に記載の気化器。
- 前記チャンバーは通孔付き仕切壁によって複数の室に仕切られており、前記隔壁構造体は前記流入口が設けられた室内に配置され、前記隔壁構造体が収容される室を仕切る仕切壁に形成された通孔が前記隔壁構造体より上方の位置に形成されていることを特徴とする請求項1に記載の気化器。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011216885A JP5913888B2 (ja) | 2011-09-30 | 2011-09-30 | 気化器 |
CN201280047608.9A CN103858212B (zh) | 2011-09-30 | 2012-07-24 | 气化器 |
PCT/JP2012/004702 WO2013046517A1 (ja) | 2011-09-30 | 2012-07-24 | 気化器 |
KR1020147000839A KR101513519B1 (ko) | 2011-09-30 | 2012-07-24 | 기화기 |
TW101127599A TWI474865B (zh) | 2011-09-30 | 2012-07-31 | Gasifier |
US13/563,983 US8724974B2 (en) | 2011-09-30 | 2012-08-01 | Vaporizer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011216885A JP5913888B2 (ja) | 2011-09-30 | 2011-09-30 | 気化器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013077710A JP2013077710A (ja) | 2013-04-25 |
JP5913888B2 true JP5913888B2 (ja) | 2016-04-27 |
Family
ID=47994613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011216885A Active JP5913888B2 (ja) | 2011-09-30 | 2011-09-30 | 気化器 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5913888B2 (ja) |
KR (1) | KR101513519B1 (ja) |
CN (1) | CN103858212B (ja) |
TW (1) | TWI474865B (ja) |
WO (1) | WO2013046517A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6306286B2 (ja) * | 2013-04-25 | 2018-04-04 | 株式会社フジキン | 流量制御用のオリフィスプレート及びこれを用いた圧力式流量制御装置 |
JP6212467B2 (ja) | 2014-11-13 | 2017-10-11 | 株式会社フジキン | 液面計及び液体原料気化供給装置 |
CN107003169B (zh) | 2014-12-02 | 2019-09-24 | 株式会社富士金 | 液面检测电路、液位计、含有液位计的容器以及使用该容器的气化器 |
JP6578125B2 (ja) | 2015-04-30 | 2019-09-18 | 株式会社フジキン | 気化供給装置 |
US11402250B2 (en) | 2016-12-27 | 2022-08-02 | Fujikin Incorporated | Liquid level meter, vaporizer equipped with the same, and liquid level detection method |
CN108518665A (zh) * | 2018-06-11 | 2018-09-11 | 杭州老板电器股份有限公司 | 蒸汽发生器及蒸汽炉 |
JP7240881B2 (ja) * | 2019-01-18 | 2023-03-16 | Jx金属株式会社 | 塩化金属の昇華容器 |
WO2021124723A1 (ja) | 2019-12-16 | 2021-06-24 | 株式会社フジキン | 気化供給方法及び気化供給装置 |
KR102361644B1 (ko) * | 2020-07-20 | 2022-02-11 | 삼성전자주식회사 | 약액 기화 장치 및 이를 포함하는 기판 처리 장치 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0674149B2 (ja) * | 1987-05-30 | 1994-09-21 | 日本タイラン株式会社 | 原料供給装置 |
JP2938461B2 (ja) * | 1988-11-08 | 1999-08-23 | 株式会社東芝 | Cvd装置への液化性原料導入法 |
US5849089A (en) * | 1997-03-14 | 1998-12-15 | Kabushiki Kaisha Toshiba | Evaporator for liquid raw material and evaporation method therefor |
JP3828821B2 (ja) | 2002-03-13 | 2006-10-04 | 株式会社堀場エステック | 液体材料気化供給装置 |
US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
US7300038B2 (en) * | 2002-07-23 | 2007-11-27 | Advanced Technology Materials, Inc. | Method and apparatus to help promote contact of gas with vaporized material |
JP4380612B2 (ja) * | 2005-09-29 | 2009-12-09 | カシオ計算機株式会社 | 反応装置 |
US7572417B2 (en) * | 2005-09-29 | 2009-08-11 | Casio Computer Co., Ltd. | Reactor |
JP5350824B2 (ja) * | 2009-02-03 | 2013-11-27 | 株式会社フジキン | 液体材料の気化供給システム |
-
2011
- 2011-09-30 JP JP2011216885A patent/JP5913888B2/ja active Active
-
2012
- 2012-07-24 WO PCT/JP2012/004702 patent/WO2013046517A1/ja active Application Filing
- 2012-07-24 CN CN201280047608.9A patent/CN103858212B/zh not_active Expired - Fee Related
- 2012-07-24 KR KR1020147000839A patent/KR101513519B1/ko active IP Right Grant
- 2012-07-31 TW TW101127599A patent/TWI474865B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201321079A (zh) | 2013-06-01 |
JP2013077710A (ja) | 2013-04-25 |
CN103858212B (zh) | 2016-06-08 |
CN103858212A (zh) | 2014-06-11 |
KR20140031971A (ko) | 2014-03-13 |
WO2013046517A1 (ja) | 2013-04-04 |
KR101513519B1 (ko) | 2015-04-20 |
TWI474865B (zh) | 2015-03-01 |
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