TWI552797B - 整合式氣體混合用之裝置及方法 - Google Patents
整合式氣體混合用之裝置及方法 Download PDFInfo
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- TWI552797B TWI552797B TW102121783A TW102121783A TWI552797B TW I552797 B TWI552797 B TW I552797B TW 102121783 A TW102121783 A TW 102121783A TW 102121783 A TW102121783 A TW 102121783A TW I552797 B TWI552797 B TW I552797B
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- Prior art keywords
- fluid
- gas
- active
- hydrogen
- mixture
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 31
- 238000002156 mixing Methods 0.000 title claims description 31
- 230000008569 process Effects 0.000 title claims description 8
- 239000012530 fluid Substances 0.000 claims description 408
- 239000007789 gas Substances 0.000 claims description 269
- 239000000203 mixture Substances 0.000 claims description 113
- 238000010790 dilution Methods 0.000 claims description 32
- 239000012895 dilution Substances 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 12
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- -1 diborane Chemical compound 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 7
- 238000011282 treatment Methods 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 5
- 229910015900 BF3 Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- KHPNGCXABLTQFJ-UHFFFAOYSA-N 1,1,1-trichlorodecane Chemical compound CCCCCCCCCC(Cl)(Cl)Cl KHPNGCXABLTQFJ-UHFFFAOYSA-N 0.000 claims description 3
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 claims description 3
- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 claims description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004254 Ammonium phosphate Substances 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- RLILESHFEOTHSL-UHFFFAOYSA-N FC1(CCC1)F.CCCCCCCC Chemical compound FC1(CCC1)F.CCCCCCCC RLILESHFEOTHSL-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 239000003570 air Substances 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 3
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 claims description 3
- 239000001273 butane Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229960004065 perflutren Drugs 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- IDYFACFOJYNFAX-UHFFFAOYSA-J tetrafluoroantimony Chemical compound F[Sb](F)(F)F IDYFACFOJYNFAX-UHFFFAOYSA-J 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 4
- 229910052743 krypton Inorganic materials 0.000 claims 3
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims 2
- HBBBDGWCSBWWKP-UHFFFAOYSA-J tetrachloroantimony Chemical compound Cl[Sb](Cl)(Cl)Cl HBBBDGWCSBWWKP-UHFFFAOYSA-J 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 claims 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims 1
- 229910001632 barium fluoride Inorganic materials 0.000 claims 1
- PEFXHXREBBAXFD-UHFFFAOYSA-K lanthanum(3+) trifluoride hydrofluoride Chemical compound F[La](F)F.F PEFXHXREBBAXFD-UHFFFAOYSA-K 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 239000003085 diluting agent Substances 0.000 description 104
- 238000009826 distribution Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 18
- 230000008054 signal transmission Effects 0.000 description 14
- 238000004377 microelectronic Methods 0.000 description 13
- 230000003068 static effect Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000011065 in-situ storage Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 238000004891 communication Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012806 monitoring device Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XMPZLAQHPIBDSO-UHFFFAOYSA-N argon dimer Chemical compound [Ar].[Ar] XMPZLAQHPIBDSO-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000645 desinfectant Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 description 1
- 235000014366 other mixer Nutrition 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000002020 sage Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C5/00—Methods or apparatus for filling containers with liquefied, solidified, or compressed gases under pressures
- F17C5/06—Methods or apparatus for filling containers with liquefied, solidified, or compressed gases under pressures for filling with compressed gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
- B01F23/191—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means characterised by the construction of the controlling means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/20—Measuring; Control or regulation
- B01F35/21—Measuring
- B01F35/213—Measuring of the properties of the mixtures, e.g. temperature, density or colour
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/20—Measuring; Control or regulation
- B01F35/21—Measuring
- B01F35/2132—Concentration, pH, pOH, p(ION) or oxygen-demand
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/20—Measuring; Control or regulation
- B01F35/22—Control or regulation
- B01F35/2201—Control or regulation characterised by the type of control technique used
- B01F35/2202—Controlling the mixing process by feed-back, i.e. a measured parameter of the mixture is measured, compared with the set-value and the feed values are corrected
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/80—Forming a predetermined ratio of the substances to be mixed
- B01F35/83—Forming a predetermined ratio of the substances to be mixed by controlling the ratio of two or more flows, e.g. using flow sensing or flow controlling devices
- B01F35/833—Flow control by valves, e.g. opening intermittently
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C13/00—Details of vessels or of the filling or discharging of vessels
- F17C13/02—Special adaptations of indicating, measuring, or monitoring equipment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C13/00—Details of vessels or of the filling or discharging of vessels
- F17C13/02—Special adaptations of indicating, measuring, or monitoring equipment
- F17C13/025—Special adaptations of indicating, measuring, or monitoring equipment having the pressure as the parameter
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C7/00—Methods or apparatus for discharging liquefied, solidified, or compressed gases from pressure vessels, not covered by another subclass
- F17C7/02—Discharging liquefied gases
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/131—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components
- G05D11/132—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by measuring the values related to the quantity of the individual components by controlling the flow of the individual components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2221/00—Handled fluid, in particular type of fluid
- F17C2221/01—Pure fluids
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2221/00—Handled fluid, in particular type of fluid
- F17C2221/03—Mixtures
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
- F17C2223/01—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by the phase
- F17C2223/0107—Single phase
- F17C2223/0123—Single phase gaseous, e.g. CNG, GNC
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- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2223/00—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel
- F17C2223/03—Handled fluid before transfer, i.e. state of fluid when stored in the vessel or before transfer from the vessel characterised by the pressure level
- F17C2223/035—High pressure (>10 bar)
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2225/00—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel
- F17C2225/01—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel characterised by the phase
- F17C2225/0107—Single phase
- F17C2225/0123—Single phase gaseous, e.g. CNG, GNC
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2225/00—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel
- F17C2225/03—Handled fluid after transfer, i.e. state of fluid after transfer from the vessel characterised by the pressure level
- F17C2225/035—High pressure, i.e. between 10 and 80 bars
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2227/00—Transfer of fluids, i.e. method or means for transferring the fluid; Heat exchange with the fluid
- F17C2227/01—Propulsion of the fluid
- F17C2227/0128—Propulsion of the fluid with pumps or compressors
- F17C2227/0157—Compressors
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- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
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- F17C2250/00—Accessories; Control means; Indicating, measuring or monitoring of parameters
- F17C2250/03—Control means
- F17C2250/032—Control means using computers
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- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
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- F17C2250/00—Accessories; Control means; Indicating, measuring or monitoring of parameters
- F17C2250/04—Indicating or measuring of parameters as input values
- F17C2250/0404—Parameters indicated or measured
- F17C2250/043—Pressure
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2250/00—Accessories; Control means; Indicating, measuring or monitoring of parameters
- F17C2250/04—Indicating or measuring of parameters as input values
- F17C2250/0404—Parameters indicated or measured
- F17C2250/0443—Flow or movement of content
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
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- F17C2250/00—Accessories; Control means; Indicating, measuring or monitoring of parameters
- F17C2250/04—Indicating or measuring of parameters as input values
- F17C2250/0404—Parameters indicated or measured
- F17C2250/0447—Composition; Humidity
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
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- F17C2250/00—Accessories; Control means; Indicating, measuring or monitoring of parameters
- F17C2250/04—Indicating or measuring of parameters as input values
- F17C2250/0404—Parameters indicated or measured
- F17C2250/0447—Composition; Humidity
- F17C2250/0452—Concentration of a product
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Description
本發明係有關於用以供應預定濃度之稀釋氣體的裝置及方法,該氣體係例如作為用於半導體或其他微電子裝置材料的離子植入摻雜之根源氣體。
於半導體工業之應用中係使用廣泛種類之稀釋氣體,其之根源材料係具高度毒性或危險性,且活性氣體類之劑量小。
例如,外延薄膜之離子植入摻雜係需要高度稀釋狀態之諸如胂、膦及鍺之根源氣體。來自稀釋胂/氫氣體混合物的胂可被植入半導體薄膜中使於此摻雜。在該一胂摻雜應用中,例如為50ppm含量之低胂根源氣體,可進一步的以氫稀釋以達到所需之氫/胂氣體混合物。稀釋胂起始材料及被添加以形成最終稀釋胂氣體混合物的稀釋氫之流量,可由質量流量控制器控制,使輸送一計量數量之最終稀釋胂至離子植入系統的離子化單元。
一般而言,在半導體工業中係利用二主要方法以供應稀釋形式之活性氣體(此用語係定義為後述被使用以代表諸如摻雜劑氣體類的氣體組份)在對所需應用中有用之氣體混合
物。
第一類稀釋氣體供應技術利用預混合高壓氣體混合物(含有低濃度活性氣體組份)為根源氣體媒質,自諸如為加壓氣體汽缸之高壓氣體供應槽分配使用。此一氣體供應方法具有下述缺陷:(1)氣體供應槽以高速率耗盡,於活性氣體消耗過程期間需多次更換氣體供應槽;(2)當氣體供應槽耗盡被更換時,活性氣體消耗過程會需要被再確認,因為自新安裝氣體供應槽供應的活性氣體濃度也許不同於先前安裝氣體供應槽所分配之濃度;(3)除了(2)之缺陷,自任何給定氣體供應槽分配之活性氣體的氣體濃度係被氣體供應槽製造者所固定,且不能根據下游活性氣體消耗處理中的時間變化條件而輸送變化濃度之氣體;(4)貯存在氣體供應槽貯存的氣體混合物中之活性氣體濃度會由於活性氣體組份之分解而依據時間改變,或活性氣體之濃度會由於氣體供應槽的連續更換而以未知及未可預期方式改變;及(5)氣體供應槽典型的係於高大氣壓力下使可貯存最大量之活性氣體於槽中,如果氣體供應槽破裂或自聯合之槽的頭部組件、閥等之洩漏,會產生潛在不安全狀況。
第二類之稀釋氣體供應技術牽涉到原位產生氣體,使用固體或液體原材料經由化學反應產生所需之氣體類。原位氣體產生具有下述缺陷:
(1)所需之啟動氣體產生及達到穩定狀態氣體生產的時間通常較長,不允許達成快速反應開啟氣體分配;(2)使用為原地氣體產生之反應劑的原材料經常為高毒性,因而有安全性及操作性上之議論;(3)原位氣體產生典型為相當複雜系統,例如包含氣體產生室、反應劑供應源、反應劑流動迴路(因為即使在固體反應劑來源的情況中,典型需要流體共同反應劑)、分配線路、及聯合之線內過濾器、純化器、聯鎖等;(4)原位氣體產生器習知均應用牽涉到需要周期性更換的消耗性部件,例如過濾器及純化器等;及(5)原位氣體產生系統在資金取得與維護成本上均相當地昂貴。
Jose I.Arno及James A.Dietz於2006年6月20日之美國專利第7,063,097號之「用以輸送預定濃度之稀釋氣體的原位氣體混合與稀釋系統」中,描述一用以輸送預定濃度之稀釋氣體的原位氣體混合與稀釋系統,其包含活性氣體源及稀釋劑氣體源。一氣體流量計量裝置被提供以預定流率分配活性氣體。一氣體混合器被安排以混合(i)由氣體流量計量裝置以預定流率分配之來自活性氣體源的活性氣體及(ii)稀釋劑氣體以形成稀釋活性氣體混合物。該系統進一步包含一監視器,被安排以感測在稀釋活性氣體混合物中之活性氣體的濃度,且反應地調整氣體流量計量裝置以控制活性氣體之分配率,並維持在稀釋活性氣體混合物中之活性氣體的濃度。
在述於美國專利第7,063,097號中之系統的一具體
例,係可適用以輸送供在半導體製造裝備之離子植入用的氣體,監視器包含熱電堆紅外線(TPIR)偵測器,且該系統使用可變限制流量孔口(RFO)為供根源氣體用之流量控制裝置,及一質量流量控制器(MFC)為供稀釋劑氣體用之流量控制裝置,以一微型泵自氣體混合器輸送一特定濃度之根源氣體至半導體製造離子植入設備。
在該一離子植入系統中,需要可控制自氣體混合器進入離子植入設備的稀釋氣體混合物的整體流量。但此係麻煩的問題,因為任何流率之調整會導致改變氣體混合器內側所維持之壓力。如此,因為TPIR偵測器的感測信號係直接地與溫度及壓力成比例,會瓦解被TPIR偵測器所感測之氣體濃度信號。任何壓力改變會導致TPIR的測定成為不準確,造成不正確濃度之稀釋混合物中之根源氣體被饋送至半導體製造設備的結果。
此外,在該離子植入系統中,如果混合器以例如為少於50torr的非常低壓力操作,TPIR偵測器也許不能感測任何水平之根源氣體。
此一不能在調整流率下準確控制濃度的情況,及不能在非常低壓力下感測根源氣體濃度的情況,造成顯著之操作問題。
使用在前述形式的氣體混合器輸送系統中之活性氣體源可包含流體貯存與分配包裝,其中在一槽中之實體吸收劑保持活性氣體於其上,用以吸收活性氣體且在分配條件下自該槽排出。可自ATMI,Inc.,Danbury,Connecticut,USA商
業取得之註冊商標SDS與SAGE的該氣體供應系統,均例如描述在美國專利第5,518,528;5,704,965;5,704,967;及5,707,424號中。
使用在氣體混合器輸送系統中之活性氣體源可選擇的可包含流體貯存與分配包裝,其中一壓力調節器被放置在於壓力下固持活性流體之槽的內部容積中。壓力調節器係被安排設有一允許分配自流體衍生之氣體的設定點,在由例如為大氣壓力之設定點所決定的壓力下,可提供高水平之作業安全。該型可自ATMI,Inc.,Danbury,Connecticut,USA商業取得之註冊商標VAC的內部調節器氣體供應包裝均例如描述於美國專利第6,101,816與6,089,027號中。
在使用前述SDS、SAGE與VAC包裝於前述氣體混合器輸送系統中供應活性氣體時,使用者經常不清楚氣體貯存與分配包裝何時接近耗盡。其結果,由於該不確定,包裝也許在過早時間點被取出而非在實際耗盡點,造成浪費在包裝中剩餘之活性氣體,且不利影響使用活性氣體之處理的成本。可選擇的,包裝也許被持續使用至完全耗盡活性氣體為止,且包裝已「完全耗盡」。其結果,必須停止空包裝作業,且更換氣體供應包裝以導入新的活性氣體包裝。此一狀況牽涉到在微電子產品製造裝備的作業中之停線時間,不利地造成裝備之經濟衝擊。
依此,微電子產品製造工業持續性地需求改善氣體供應源及監視氣體分配作業,使可用以有效率且經濟地輸送稀釋氣體至處理設備。
本發明係有關於一用以輸送稀釋流體之系統,將稀釋流體輸送至諸如為用以製造半導體裝置及積體電路結構所應用的離子植入設備,或至其他微電子裝置製造作業中。
在一觀點中,本發明有關於一輸送稀釋流體用之系統,包含:一活性流體源;一稀釋劑流體源;一用以分配活性及稀釋劑流體之一的流體流量計量裝置;一被安排以混合活性及稀釋劑流體使形成一稀釋活性流體混合物之混合器;一被安排以感測在稀釋活性流體混合物中之活性流體及/或稀釋劑流體的濃度,且反應地調整流體流量計量裝置以達成在稀釋活性流體混合物中之活性流體的預定濃度之監視器;及一被安排以控制另一活性與稀釋劑流體之流量,以使維持自系統分配之稀釋活性流體混合物的預定壓力之壓力控制器。
在另一態樣中,本發明係有關於一輸送稀釋流體用之系統,包括:一活性流體源;一稀釋劑流體源;一以流體流動連通與活性流體源接合之流體流量計
量裝置,且可選擇地調整以分配預定流率之活性流體;一以流體流動連通與稀釋劑流體源接合之壓力控制器,且被安排以分配預定壓力之稀釋劑流體;一被安排以混合預定流率之被分配活性流體及預定壓力的被分配稀釋劑流體以形成稀釋活性流體混合物之混合器;及一監視器,該監視器被安排以(i)在稀釋活性流體混合物被自系統分配之前感測混合物中的活性流體之濃度,及(ii)反應地調整流體流量計量裝置以控制活性流體之分配率,使可維持被自系統分配的稀釋活性流體混合物中之活性流體的預定濃度。
在另一態樣中,本發明係有關於一流體混合裝置,包括:被安排用以連接至一活性流體源及一稀釋劑流體源的流動迴路;一流體流量計量裝置,該裝置以流體流動連通與活性流體源流動迴路接合,且選擇性地調整以預定流率分配活性流體;一壓力控制器,該控制器以流體流動連通與稀釋劑流體源流動迴路接合,且被安排以分配於預定壓力之稀釋劑流體;一被安排以混合預定流率之被分配活性流體及預定壓力的被分配稀釋劑流體以形成稀釋活性流體混合物之混合器;及
一監視器,該監視器被安排以(i)在稀釋活性流體混合物被自系統分配之前感測混合物中的活性流體之濃度,及(ii)反應地調整流體流量計量裝置以控制活性流體之分配率,使可維持被自系統分配的稀釋活性流體混合物中之活性流體的預定濃度;其中流體流量計量裝置、壓力控制器、混合器及監視器均被容納在一流體混合器箱中,且流動迴路係被安排用以連接至位於流體混合器箱外部之活性流體與稀釋劑流體源,且稀釋活性流體混合物被分配至該箱之外部的位置。
本發明之再進一步態樣係有關於一輸送稀釋流體用之裝置,其中該裝置係適用以聯結活性流體源與稀釋劑流體源,以輸送成為來自活性流體源之活性流體與來自稀釋劑流體源的稀釋劑流體之混合物的稀釋流體,該裝置包括:一流體流量計量裝置,該裝置適用以流體流動連通與活性流體源接合,且可選擇地調整以分配預定流率之活性流體;一壓力控制器,該控制器適用以流體流動連通與稀釋劑流體源接合,以分配預定壓力下之稀釋劑流體;一混合器,被安排以混合預定流率之被分配活性流體及預定壓力的被分配稀釋劑流體以形成稀釋活性流體混合物;及一監視器,該監視器被安排以(i)在分配稀釋活性流體混合物之前感測混合物中的活性流體濃度,及(ii)反應地調整流體流量計量裝置以控制活性流體之分配率,使可維持在
被分配稀釋活性流體混合物中之活性流體的預定濃度。
在多種進一步態樣中,本發明係有關於輸送流體之方法,利用裝置、及前述形式之系統。
本發明之另一態樣係有關於一輸送稀釋流體之方法,包括:提供活性流體源與稀釋劑流體源;可控制地以預定流率自其之流體源分配活性流體與稀釋劑流體之一;以預定壓力自其之流體源分配另一活性流體與稀釋劑流體;混合被分配之活性流體與被分配之稀釋劑流體以形成稀釋活性流體混合物;監視至少一在稀釋活性流體混合物中之活性流體與稀釋劑流體,且反應地調整以預定流率分配之流體的分配率,使維持在稀釋活性流體混合物中之活性流體的預定濃度;及分配稀釋活性流體混合物以供使用。
在又另一態樣中,本發明係有關於輸送稀釋流體用之方法,包括:提供活性流體源與稀釋劑流體源;可控制地以預定流率自活性流體源分配活性流體;以預定壓力自稀釋劑流體源分配稀釋劑流體;混合被以預定流率分配之來自活性流體源的活性流體與來自稀釋劑流體源之稀釋劑流體,以形成稀釋活性流體
混合物;監視在稀釋活性流體混合物中之活性流體的濃度且反應地調整活性流體之分配率,使維持在稀釋活性流體混合物中之活性流體的預定濃度;及分配稀釋活性流體混合物以供使用。
本發明的進一步觀點係有關於一輸送稀釋流體用之系統,包含:一活性流體源;一稀釋劑流體源;一用以分配活性及稀釋劑流體之一的流體流量計量裝置;一被安排以混合活性及稀釋劑流體使形成一稀釋活性流體混合物之混合器;一被安排以感測在稀釋活性流體混合物中之活性流體及/或稀釋劑流體的濃度,且反應地調整流體流量計量裝置以達成在稀釋活性流體混合物中之活性流體的預定濃度之監視器;及至少下列之一:(I)一被安排以維持自系統分配之稀釋活性流體混合物的預定壓力之壓力控制器;及(II)一被安排以決定至少一活性流體源與稀釋劑流體源何時係耗盡或接近耗盡或幾乎耗盡的情況,且反應地使該流體源不能再分配流體之反應終點偵測器組件。
本發明之另一態樣係有關於一混合流體以形成多組
份流體之方法,該方法包括監視多組份流體的其之一或更多組份的濃度,且反應地調變混合以維持在多組份流體中的該一或更多組份之濃度於預定程度,監視至少一混合流體之壓力,且反應地調變至少一混合流體的流量以維持多組份流體之壓力於預定程度。
本發明之再進一步態樣係有關於製造微電子產品的方法,包括使用由前述方法準備之多組份流體。
本發明之又另一態樣係有關於一流體輸送組件,包含:一適用以決定多組份流體的一或更多組份之濃度的監視器;一被操作地聯結至監視器以反應所決定之濃度且產生一相關性輸出的控制器;一被安排以反應相關性輸出而調變多組份流體的一或更多組份之流量的流量控制裝置;一被安排以混合組份使形成多組份流體的混合器;及一適用以維持被導入該監視器的多組份流體之預定壓力的壓力控制器。
在另一態樣中,本發明係有關於一微電子產品製造裝備,包括於此所述之流體輸送組件。
本發明之額外態樣係有關於輸送流體之方法、及製造微電子產品的方法。
本發明之進一步態樣係有關於一組合二或更多之流
體以形成多組份流體的方法,該多組份流體含有預定濃度之一或更多組份流體於其中,該方法包括以一或更多但少於全部該二或更多流體之調變附加混合該二或更多流體,其中該附加係反應至少一該一或更多但少於全部該二或更多流體之濃度感測而被調變,且控制該多組份流體之壓力使該多組份流體在預定壓力下。
本發明之另一態樣係有關於一製造微電子產品之方法,包括使用由前述方法產生的多組份流體。
本發明之進一步態樣係有關於一可與活性流體源及稀釋劑流體源聯合之副組件,用於混合以使輸送稀釋流體,該副組件包含:一適用以分配活性與稀釋劑流體之一的流體流量計量裝置;一被安排以混合活性及稀釋劑流體使形成一稀釋活性流體混合物之混合器;一被安排以感測在稀釋活性流體混合物中之活性流體及/或稀釋劑流體的濃度,且反應地調整流體流量計量裝置以達成在稀釋活性流體混合物中之活性流體的預定濃度之監視器;及一被安排以控制另一活性與稀釋劑流體之流量,以使維持自該系統分配之稀釋活性流體混合物的預定壓力之壓力控制器。
由下述揭示與申請專利範圍,可更完全清楚本發明之其他態樣、特色、與具體例。
10‧‧‧氣體輸送系統
12‧‧‧乾淨活性氣體源
14‧‧‧稀釋氣體源
15‧‧‧活性氣體源
16‧‧‧單元外殼
17‧‧‧隔離閥
18‧‧‧質量流量控制器
19‧‧‧分支線路
20‧‧‧離子植入半導體製造設備
21‧‧‧隔離閥
22‧‧‧排放線路
23‧‧‧信號傳輸線路
24‧‧‧可變限制流量孔口
25‧‧‧信號傳輸線路
26‧‧‧排放線路
28‧‧‧小型泵
30‧‧‧分支線路
32‧‧‧線路
34‧‧‧電子壓力控制器
36‧‧‧線路
38‧‧‧靜態混合器
40‧‧‧線路
42‧‧‧TPIR分析器
44‧‧‧線路
46‧‧‧線路
48‧‧‧信號傳輸線路
50‧‧‧控制器
52‧‧‧信號傳輸線路
圖1係一被安排以供應稀釋氣體混合物至離子植入半導體製造設備的氣體輸送系統之略圖。
Jose I.Arno於2005年6月20日之美國專利第6,909,973號「試劑受測光調變之輸送」及Jose I.Arno等人於2006年6月20日之美國專利第7,063,097號「用以輸送預定濃度之稀釋氣體的原位氣體混合及稀釋系統」等揭示內容,於此均全體併入本文以為參考。
本發明提供一用以輸送稀釋流體之系統,利用活性流體源、稀釋劑流體源、用以分配活性與稀釋劑流體之一的流體流量計量裝置、被安排混合活性與稀釋劑流體以形成稀釋活性流體混合物之混合器、及被安排以感測在稀釋活性流體混合物中的活性流體及/或稀釋劑流體之濃度的監視器,並反應地調整流體流量計量裝置以達成在稀釋活性流體混合物中的活性流體之預定濃度。一壓力控制器被安排以控制另一活性與稀釋劑流體的流動,以使維持自系統分配之稀釋活性流體混合物的預定壓力。然後,自系統分配之流體被一例如為質量流量控制器的流率控制器可調整地控制,以提供所需流量至諸如一半導體處理設備的流體利用單元。對該目的有用之半導體處理設備可以為任何適合之型式,例如離子植入設備、化學氣相沉積設備、磊晶摻雜設備、蝕刻設備等。
在一特定具體例中,本發明包含一活性流體源、稀釋劑流體源、用以分配活性流體之流體流量計量裝置、及被
安排以混合活性流體與稀釋劑流體以形成稀釋活性流體混合物之混合器,例如為一混合裝置或含有該裝置之外罩或室、或一部份之流動回路、或其他設備或結構。在此一具體例安排一監視器以感測在稀釋活性流體混合物中的活性流體之濃度,且反應地調整流體流量計量裝置以控制活性流體的分配率,使達成自系統分配之稀釋活性流體混合物中的活性流體之預定濃度。在此一具體例中應用一壓力控制器以控制稀釋劑流體流量,以維持自系統分配之稀釋活性流體混合物的預定壓力。
本發明提供用以供應預定濃度之稀釋氣體的高效率系統及方法,例如作為用於一半導體材料之離子植入摻雜的根源氣體。
此外,本發明可解決使用質量流量控制器於輸送稀釋氣體時產生的一主要問題,即為,使用在晶圓處理設備中的質量流量控制器沒有調節顯著壓力偏差之能力。當MFCs均被利用在對壓力可變性敏感之氣流中時,該質量流量控制器的缺陷造成不精確監視之結果,諸如在運載氣體流受調以於經由組合運載氣體與活性氣體組份而形成之混合氣體氣流中產生所需的活性氣體組份之濃度。
在一於後詳述之特定具體例中,流體流量計量裝置包含一在互連活性流體源及用以流動活性流體至混合器的泵之流體流動線路中的可變RFO,壓力控制器包含一被裝設在互連稀釋氣體源及混合器之流體流動線路中的電子壓力控制器及/或機械壓力控制器,混合器包含一靜態混合器,且監視
器包括被安排以產生相關於在稀釋活性流體混合物中之所感測到的活性流體濃度之輸出控制信號的線內流體分析器,控制信號被傳輸至流體流量計量裝置以調變其之設定點,使達到供施用稀釋活性流體混合物所需要之預定恆定活性流體濃度。
本發明因而提供一用以輸送一包含被選定濃度之稀釋組份流體的受控壓力稀釋流體混合物之系統,因而,分配流體混合物之使用者可調整地控制其之流量,使可使用所需濃度的稀釋組份流體在所需之下游。
流體流量計量裝置可以為任何適合之形式,例如包含前述之可變RFO裝置,或可選擇之質量流量控制器、可被啟動以自活性流體供應源分配非常低流率的活性流體組份之微閥元件、與在分配線路中之流量控制閥聯結的流量計、或任何可有效提供選定之來自活性氣體源的活性流體流率之其他元件或組件。
在另一具體例中之流體流量計量裝置包含聯合流體貯存與分配槽(例如美國專利第6,089,027號所述之形式)的流體調節器元件,其中流體調節器元件係操作地聯結反饋控制迴路,被安排以達成在分配流體混合物中之所需活性氣體濃度。
活性流體源可為任何適合之形式,例如氣體貯存與分配槽或保有將被稀釋使用之乾淨活性氣體的容器。在一具體例中,活性流體源包括可自ATMI,Inc.,Danbury,CT,USA商業取得之SDS商標下的述於Glenn M.Tom等人之美國專利
第5,518,528號的形式之次大氣壓活性氣體貯存與分配槽,其中活性氣體被吸收性地保存在吸收劑上,且選擇性地自其解吸以自該槽分配活性氣體。在另一具體例中,乾淨活性氣體源包括可自ATMI,Inc.(Danbury,CT)商業取得之VAC商標下的述於Luping Wang等人之美國專利第6,089,027號的形式之氣體貯存與分配槽,特色在於內部裝設之調節器元件,用以分配由調節器設定點決定之壓力的活性氣體。
活性流體源可選擇地以任何適合方式建構及/或安排例如為供應結構、材料或作業。例如,活性流體源可包含述於Glenn M.Tom等人之美國專利第5,518,528號的形式之固態物理吸收劑封裝。在其他具體例中,活性流體可自液體溶液釋出、或由原地發生器所產生、或自2004年10月公佈之美國專利公開第20040206241號的「反應液體貯存與輸送系統」中所述之反應液體所產生、或自反應固體獲致、或自可汽化或可昇華固體獲致。大致上,可使用任何合適之活性流體根源或供應源。在一特定具體例中,如1999年6月29日美國專利第5,916,245號的「高容量氣體貯存與分配系統」中所述的包含保持結構之活性流體源。
被安排以混合活性流體與稀釋劑流體使形成稀釋活性流體混合物之混合器可為任何適合形式,因而活性流體與稀釋劑流體均互相混合,以供排放所需稀釋濃度之活性流體,以使例如流至下游稀釋流體混合物應用處理。混合器可包含諸如泵、壓縮機、旋轉混合器等的動態混合裝置,或可選擇的文丘里管、靜態混合器、噴射器、引射器、相對噴射
配設混合室、或其他可進行混合活性流體與稀釋劑流體以產生稀釋活性流體混合物的裝置、結構或組件。在一特定範例中,可有利地實際應用在本發明中之混合裝置,係可自ConPro Tec,Inc.(Salem,New Hampshire,USA)商業取得的ConPro Tec ST250-36靜態混合器。在另一具體例中之混合器係由罩入一混合裝置的混合室構成,其被安排以混合活性氣體與稀釋劑氣體。
被安排以感測在稀釋活性流體混合物中的活性流體濃度且反應地控制活性流體之分配率以達成在稀釋活性流體混合物中的流性流體之預定濃度的監視器可以為任何適合之形式,包含光譜、分光、電化學、熱學、聲學、光度、表面聲波(SAW)、色度、彩譜、光子、及火焰離子化型流體監視器。較佳監視器形式包含TPIR、傅立葉變換紅外線(FT-IR)及IR光度監視器。監視器可被以任何適合方式安排,例如被線內裝設在稀釋活性流體混合物排放線路中,或經由一側流樣本配置裝設至樣本、或其他任何適合形式。
監視器可包含在一給定之本發明應用中所需要的一或多數監視裝置或組件。在應用多數監視器裝置的情況中,經由不同感測樣式提供監視,由每一構成之監視裝置或組件產生的指出在稀釋活性流體混合物中之活性流體濃度的信號,可被處理以提供相關於在稀釋活性流體混合物中之活性流體濃度的平均或校正輸出信號。為達此目的,監視器可操作地聯結控制器,因此,控制器反應來自系統中之監視器的信號,且反應地調整系統維持在活性氣體與運載氣體形成的
多組份氣體混合物中之活性氣體的預定濃度。
該信號可由可程式化一般目標用電腦執行處理,該電腦被程式化以依據適合之計算法或計算程序處理個別監視裝置或組件的個別輸出信號,以提供相關於在稀釋活性流體混合物中之活性流體濃度的淨輸出信號。可選擇的,信號處理可由比較器或橋接電路、微處理器、中央處理單元(CPU)或其他處理器執行,以使提供合適之輸出而調變流體流量計量裝置,達成在稀釋活性流體混合物中之所需的活性流體濃度。
在本發明之稀釋流體供應系統中的活性流體可為任何適合之形式,可根據將提供之稀釋活性流體混合物的特定稀釋活性流體混合物使用過程而定。流體可例如為一氣體,該氣體係用以製造半導體或微電子產品的形成摻雜劑或追踪試劑類之根源材料。流體可選擇的被稀釋以使用為一校準標準、在危險濃度程度下使用的消毒劑、供毫微濃度化學反應用之反應劑、或供準備用於研究與測試目的之低濃度能引起突變的試劑樣本等。雖然典型地構成單一組份流體之活性流體在本發明的某些具體例中可被提供為預先混合氣體混合物,其然後被與稀釋劑氣體混合。稀釋劑氣體亦可為單一組份或多組份氣體。
稀釋活性流體混合物使用處理可被反應地變化,且可多樣地包含工業處理、醫學分析、研究調查、農業檢定、以稀釋放射線治療劑治療身體等。在一較佳反應終點使用中,稀釋活性流體混合物係被分配以供使用在離子植入中,
以形成半導體裝置或在微電子裝置製造中的積體電路結構或基板。
稀釋劑流體可為任何適合形式,且可多樣地包含單一組份稀釋劑成份以及多組份稀釋劑配方。在本發明之特定應用中所示的較適合稀釋劑流體非限制性地包含氮、氬、氦、空氣、氪、氙、氫、氧、氙鹵化物、氨、及氣態有機金屬複合物。
現在參考圖式,圖1係一氣體輸送系統10之略圖,該系統10被安排以供應稀釋氣體混合物至一離子植入半導體製造設備20。
稀釋氣體供應系統10包含乾淨活性氣體源12,該氣體源可例如包含一流體貯存與分配槽,諸如在Glenn M.Tom等人之美國專利第5,518,528號及Luping Wang等人的美國專利第6,089,027號所揭示的習知高容量氣體汽缸或可選擇的次大氣壓氣體分配系統之形式。
故乾淨活性氣體源12可包含一裝配有閥頭,或另外與外接調節器、限制孔口之流動控制配件及其他習知流動電路配件耦接之槽。該閥頭可包含一習知流動控制閥(頭閥),其可藉由一手輪致動器,或另外由自動閥控制器(如氣動致動器,或電螺線管閥致動器等)所控制。
乾淨活性氣體源12被以封閉氣體流動連通方式聯結具有閥17及可變限制流動孔口(RFO)24被裝設於其中之排放線路22。可變RFO 24之下游的排放線路26被聯結至小型泵28。小型泵可操作以將乾淨活性氣體自排放線路26泵入分
支線路30使由此流入線路36內,且與線路36中添加之稀釋劑氣體一起通至靜態混合器38。在一特定範例中,可有用地實際應用在本發明的該小型泵係可自Senior Operations,Inc.(Sharon,Massachusetts,USA)商業取得之MB-41風箱式泵。可有用地實際應用在本發明的可變RFO裝置係可自Pneutronics Division of Parker-Hannifin(Hollis,New Hampshire,USA)商業取得之Model 1 VSO閥。
稀釋氣體源14被提供在系統中,且被安排在線路32中排放稀釋氣體至電子壓力控制器(EPC)34,氣體自此通過且自EPC排放在線路36中並流至靜態混合器38。可選擇的,可應用旋轉混合器、動葉混合器、噴射器、或其他混合器。
靜態混合器38作用以混合活性氣體與稀釋氣體,使可形成稀釋活性氣體混合物,該混合物自靜態混合器排放在線路40中且通過TPIR單元42,以供分析在稀釋活性氣體混合物中之活性組份的決定濃度。
TPIR線內氣體分析器42係被建構且安排以產生指出在自線路40流動通過分析器42且自分析器42排放在線路44中以使流動至質量流量控制器18的稀釋氣流中之活性氣體濃度的輸出控制信號。受控流率之稀釋活性氣體混合物氣流係自質量流量控制器18排放進入管線46內且於其中流至下游氣體使用處理單元20,例如為離子植入設備或其他半導體處理設備或微電子裝置製造配置。
指出在氣體混合物中之稀釋氣體濃度的電子信號係由TPIR線內分析器42所產生且在信號傳輸線路48中傳輸至
控制器50。控制器50反應產生一在信號傳輸線路52傳輸至可變RFO 24之控制信號,以調整RFO裝置之設定且因而調變在排放線路26中的乾淨活性氣體之流率,該氣體被流動至小型泵28以使通過線路30與36泵至靜態混合器38,因此維持在流至TPIR分析器42的氣體混合物中之活性氣體組份的預定濃度。
同時地,EPC單元34作用以維持在包含氣體流動線路36、40與44之流動通路中的恆定設定點壓力,因此,進入下游質量流量控制器18的稀釋氣體混合物之壓力被維持恆定於所需壓力程度。雖然壓力控制器相關於流體流量計量裝置係典型地被應用為一分開且獨立之混合氣體輸送系統的組件,在本發明之某些具體例中,壓力控制器可作用為一流體流量計量裝置,排除分開計量裝置組件的需要。
如示於圖1,氣體輸送系統10之組件包含可變RFO 24、小型泵28、EPC 34、靜態混合器38、TPIR分析器42、及控制器50,且可與聯合之氣體流動線路及信號傳輸線路一起被提供在一單元外殼16中,使提供氣體混合箱為一模組化單元設備,線路22、32與44自氣體混合箱伸出或終止於箱表面的孔口、連接器、或其他聯結結構中,使協助個別地連接該線路至活性氣體源12、稀釋氣體源14及外部流量控制器18。
在操作中,乾淨(100%濃度)活性氣體被自亁淨氣體源12分配進入含有可變RFO 24之排放線路22內,RFO係操作以控制乾淨氣體之輸送率。線路22含有隔離閥17,該閥
17於自乾淨活性氣體源12分配氣體期間係開啟的,而在分支線路19中的隔離閥21係關閉的。所產生之來自排放線路22中的活性氣體源12的受調流率乾淨氣體被小型泵28自線路30泵至線路36,以供導入至靜態混合器38並於其中與自稀釋氣體源14流動通過線路32與EPC 34而至線路36的稀釋氣流混合。所產生之混合稀釋氣流(由活性氣體與稀釋氣體構成)在線路40中流至TPIR線內氣體分析器42,分析器42決定氣體混合物中之活性氣體濃度,且被使用以反應地產生在信號傳輸線路48中傳輸至控制器50的控制信號。控制器反應地產生在線路52中傳輸之控制信號以調變可變RFO,即為增加或減少活性氣體輸送率,使達成在流動至下游處理單元20之線路44中的稀釋活性氣體混合物中之所需稀釋活性氣體濃度。
雖然示範地描述為一TPIR單元,線內氣體監視器/分析器42可選擇地可被任合適合之作業模式操作,例如包含光譜、分光、電化學、聲學監測、熱監測等、或二或更多該作業模式之組合,以決定流至下游氣體使用處理的稀釋氣體混合物中之活性氣體濃度。在本發明的一可選擇具體例中,氣體監視器/分析器係揭示在美國專利第6,909,973號中紅外線光度監視器之形式。
此外,雖然示於圖1中之具體例係安排流體流量計量裝置分配活性流體、監視器感測活性流體之濃度、且壓力控制器控制稀釋劑流體流動,示於圖1中之輸送系統可選擇地被組態使得流體流量計量裝置被安排以分配稀釋劑流體、
監視器被安排以感測在稀釋活性流體混合物中之稀釋劑流體的濃度、且壓力控制器被安排以控制活性流體流動以維持自系統分配之稀釋活性流體混合物的預定壓力。再進一步可選擇的,依據本發明之給定應用的需要與需求,多數之流體流量計量裝置、監視器及壓力控制器可被應用於每一活性及稀釋劑液流中,及/或多數活性及/或稀釋劑流體可被在混合輸送系統中混合。
前述活性流體可為任何適合形式,例如包含在半導體處理或其他微電子處理情況中使用之氣體,諸如氫化物(胂、膦、矽烷、鍺等)、酸性氣體(SiHCl3、SiF4、SiH2Cl2)、甲硼烷等。用於該半導體或微電子裝置製造應用的稀釋氣體可例如包含同核雙原子類(H2、N2、O2)或原子氣體(氬氦等)。活性流體可為單一組份流體、或可選擇的,多組份流體,根據本發明之給定應用而妥適選用。可存在於或構成在本發明特定應用中之活性流體的示範氣體不限制性地包含胂、膦、氫、三氯化氮、氨、一氧化二氮、六氟化鎢、氯化氫、氯、溴化氫、乙硼烷、甲烷、乙烯、氯仿、丁烷、丙烷、六氟化硫、氮、氟、氟化銨、磷酸銨、氫氧化銨、三氟化硼、三氯化硼、二氯矽烷、鍺、四氟代甲烷、三氟甲烷、二氟甲烷、甲基氟、六氟乙烷、五氟代甲烷、全氟丙烷、辛二氟環丁烷、氧化氮、矽烷、四氯化矽、四氟化矽、三氯矽烷、硒化二氫、及有機金屬試劑氣體。
必須了解,雖然本發明係參照輸送做為活性流體之稀釋氣體類示範例顯示,本發明亦可修正為輸送液相材料混
合物,包含所需濃度之活性液體。
亦必須了解,本發明之稀釋流體系統可被操作且安排以供應多數之活性類,例如為複雜摻雜劑的混合物。
在另一具體例中,活性流體及/或稀釋劑流體可包含超臨界氣體。
使用本發明之系統的安全優點在當活性流體源係諸如前述之Tom等人與Wang等人的專利之次大氣氣體源時可被加強。
因而,本發明系統由於使用即時流體監視器、提供連續測量流體混合物以確保在輸送之稀釋流體混合物中的恆定稀釋活性流體濃度,且於同時提供所輸送稀釋流體混合物於設定點壓力(由EPC或其他壓力控制單元所決定),由末端使用者調節下游流動控制,使不會線內分析器之準確性或從稀釋流體混合物中的活性流體組份之所需濃度水平偏離。如果活性流體濃度自一組設定點值偏離,自流體監視器傳送控制信號至活性流體計量裝置,例如為可變RFO,以使增加或減少活性流體輸送率以維持所需濃度值。
當如上述地應用在氣體混合箱中時,本發明之系統提供方便地運送及安裝之使用點氣體輸送單元,其可輕易地被連接至根源氣體槽或其他供應機構,且連接至下游流動控制器及氣體使用處理設備,以提供含有精確控制濃度之活性組份的所需數量之稀釋氣體混合物。
經由使用取代習知流體輸送系統中應用的質量流量控制器之電子壓力控制器或其他壓力控制器來控制稀釋劑氣
體之流量、可在氣體混合器中維持恆定壓力,不論末端使用者所選擇之用以輸送至下游氣體運用設備的整體流率為何。在一示範範例中,可自MKS,Inc.(Wilmington,Massachusetts,USA)商業取得之MKS 640絕對壓力控制器,係對該前述目的有用地應用之電子壓力控制器。維持氣體混合器於恆定壓力允許分析器在全部時間中以準確方式決定稀釋活性氣體組份之濃度。
此外,在末端使用者關閉質量流量控制器或其他下游流量控制器時,該控制器係控制流體混合物自流體混合器流入下游流體運用單元內,在流體混合系統中之壓力控制器會終止稀釋流體的流動,因為在流體混合箱內側的壓力會達到壓力控制器之壓力設定點。於該點處,活性流體的流動亦被關閉,因為活性流體被可變RFO(或其他流量控制器)控制,RFO係被操作地與控制器聯結,控制器再與線內分析器互連。在停止來自混合器的流體混合物之供應時,線內分析器會感測在流體混合物中的活性流體濃度,在上昇些微地高於控制器設定點下且導致可變RFO(或其他流量控制器)被控制器的作用關閉,因而亦終止活性流體流入混合器內。
其後,當末端使用者開始將流體混合物自流體混合器流至下游氣體使用設備時,EPC(或其他壓力控制器)會允許稀釋劑流體再次流入流體混合器內,因此,在混合器中之整體壓力被維持在EPC(或其他壓力控制器)設定點,且可變RFO(或其他流量控制器)會再次開啟以允許活性流體亦進入混合器,使得控制器之活性流體濃度設定點而後可被維持。
本發明之混合器輸送系統亦可以具有被安排系列地使用之末端偵測能力及多樣流體包裝,因此,偵測到幾乎耗盡一包裝時,耗盡包裝被轉換離開且活性流體之新的包裝被轉換進入,以維持分配作業的連續性。如果稀釋劑流體源係被包裝形式,可額外地運用末反應終點偵測能力及相對應之相對應轉換稀釋劑流體包裝,自流體的已耗盡或接近耗盡之包裝轉換至新的包裝。
因而,示於圖1之氣體輸送系統10可如所示地被安排具有作業用的二活性氣體源12與15,因此在耗盡活性氣體源12時,該源可被隔離且一新鮮源被在運轉中攜入活性分配作業內。為達此目的,氣體輸送系統10具有二活性氣體源12與15,源12如前述地被排放線路22接合至可變RFO 24。一隔離閥17被裝設在線路22中,因此當源12耗盡時可在運轉中取出。
源15含有活性氣體且被含有隔離閥21於其中的分支線路19接合至排放線路22。當源12耗盡時,於正常的自該源分配期間係開啟的流量控制閥17然後被關閉,且同時地已被關閉之流量控制閥21因而被開啟,使可將活性氣體自源15通過排放分支線路19而至排放線路22。
以此方式,經由在用盡或接近用盡源12時轉換至源15,源12可被轉換出以確保活性氣體流的連續性。
氣體輸送系統10使用可變RFO 24為流量控制裝置。可變RFO被連接至控制器50且控制器50額外地聯結至TPIR分析器42。TPIR分析器在下游測量氣體濃度且反應地
經由信號傳輸線路48傳送濃度感測信號至控制器50。根據控制器濃度設定點,可變RFO 24之孔口會開啟或關閉,直到在控制器50中的濃度設定點與TPIR濃度讀數一致為止。
由於活性氣體流自連線源12,在該源內側之壓力降低。在源壓力降低時,可變RFO 24之孔口會進一步開啟,使可維持設定之活性氣體流率。在一具體例中之可變RFO係根據被供應至該RFO的電壓量而開啟或關閉,成為電壓反應流量控制裝置。供應至可變RFO的電壓愈高,該裝置之孔口更開啟。依此,經由監視被供應至孔口的電壓,可決定活性氣體源12之反應終點,因為源12已逐漸耗盡,且自該源分配之活性氣體壓力亦下降。為使維持由TPIR分析器42所測量之控制器設定點的氣體濃度,可變RFO 24之孔口會連續進一步且進一步的開啟,直到孔口已不再有壓降為止。因為可變RFO係由電壓源操作,當最大電壓被供應至可變RFO時,源12已接近用盡並指出該源之反應終點,因而相對應地需要隔離該源12並轉換至新的源15。
控制器50因而被程式化地安排以監視被供應至可變RFO的電壓及該電壓何時到達預定值,控制器操作以在信號傳輸線路23中傳輸控制信號至隔離閥17以關閉該閥且因而隔離源12,因此,該源可被自流動迴路脫離且自氣體輸送系統移除。同時地,控制器50在信號傳輸線路25中傳輸信號至線路19中的隔離閥21,開啟該閥使得新的活性氣體自源15供應至下游流動迴路。
雖然本發明已於此參照本發明之示範具體例、特
色、及特定態樣加以說明,必須了解本發明之使用性並非被如此地限制,習於本發明之領域者了解根據於此之揭示,可延伸出且涵蓋了多數之其他變化、修改及可選擇具體例。相對應的,本發明於後之申請專利範圍係廣泛地解釋及說明,使包含在其之精神與範疇內的所有該種變化、修改、及可選擇具體例。
10‧‧‧氣體輸送系統
12‧‧‧乾淨活性氣體源
14‧‧‧稀釋氣體源
15‧‧‧活性氣體源
16‧‧‧單元外殼
17‧‧‧隔離閥
18‧‧‧質量流量控制器
19‧‧‧分支線路
20‧‧‧離子植入半導體製造設備
21‧‧‧隔離閥
22‧‧‧排放線路
23‧‧‧信號傳輸線路
24‧‧‧可變限制流量孔口
25‧‧‧信號傳輸線路
26‧‧‧排放線路
28‧‧‧小型泵
30‧‧‧分支線路
32‧‧‧線路
34‧‧‧電子壓力控制器
36‧‧‧線路
38‧‧‧靜態混合器
40‧‧‧線路
42‧‧‧TPIR分析器
44‧‧‧線路
46‧‧‧線路
48‧‧‧信號傳輸線路
50‧‧‧控制器
52‧‧‧信號傳輸線路
Claims (17)
- 一種氣體源組件,包含:一第一流體供應槽,該第一流體供應槽含有一第一流體,該第一流體包含選自從胂、膦、三氟化氮、氨、一氧化二氮、六氟化鎢、氯化氫、氯、溴化氫、乙硼烷、甲烷、乙烯、氯仿、丙烷、丁烷、六氟化硫、氟、氟化銨、磷酸銨、氫氧化銨、硼烷、三氟化硼、三氯化硼、二氯矽烷、鍺烷、四氟代甲烷、三氟甲烷、二氟甲烷、甲基氟、六氟乙烷、全氟丙烷、辛二氟環丁烷、氧化氮、矽烷、四氯化矽、四氟化矽、三氯矽烷、硒化二氫、及有機金屬試劑氣體構成之群組的至少一流體類;一第二流體供應槽,該第二流體供應槽含有一第二流體,該第二流體包含選自從氮、氬、氦、空氣、氪、氙、氙鹵化物、氫、氧、氨、及氣態有機金屬複合物構成之群組的至少一流體類,其中當該第二流體從氫構成時,該第一流體不是從胂構成;一流體流量計量裝置,適用於分配該第一和第二流體的一者;一混合器,被安排以混合該第一和第二流體以形成一稀釋流體混合物;一監視器,被安排以感測在該稀釋流體混合物中之該第一流體與該第二流體的任一者的濃度;一控制器,被安排以接收來自該監視器的一信號,該信號指出在該稀釋流體混合物中之該第一流體與/或該第二 流體的濃度,且被安排以反應地調整該流體流量計量裝置以達成在該稀釋流體混合物中之該第一流體的一預定濃度;以及一壓力控制器,被裝設在該混合器的上游,被安排以感測且控制該第一和第二流體的另一者的壓力,及設以維持在該混合器處該第一和第二流體的該另一者的一預定壓力。
- 如申請專利範圍第1項之氣體源組件,其中該監視與控制系統包含選自從TPIR監視器、光度流體監視器、分光流體監視器、電化學流體監視器、聲學流體監視器、熱學流體監視器、及紅外線光度流體監視器構成之群組的至少一監視器。
- 如申請專利範圍第1項之氣體源組件,包含使以下作為一第一流體和一第二流體:(i)三氟化硼和氫;(ii)四氟化矽和氫;(iii)膦和氫;(iv)乙硼烷和氫;(v)矽烷和氫;或(vi)鍺烷和氫。
- 如申請專利範圍第1項之氣體源組件,其中該第二流體包含氨、氮、氦、氬、氪、或氙的一或更多者。
- 如申請專利範圍第1項之氣體源組件,包含使三氟化硼和氫作為一第一流體和一第二流體。
- 如申請專利範圍第1項之氣體源組件,包含使四氟化矽和氫作為一第一流體和一第二流體。
- 如申請專利範圍第1項之氣體源組件,包含使膦和氫作為一第一流體和一第二流體。
- 如申請專利範圍第1項之氣體源組件,包含使乙硼烷和氫作為一第一流體和一第二流體。
- 如申請專利範圍第1項之氣體源組件,包含使矽烷和氫作為一第一流體和一第二流體。
- 如申請專利範圍第1項之氣體源組件,包含使鍺烷和氫作為一第一流體和一第二流體。
- 如申請專利範圍第1項之氣體源組件,其中該第一流體與該第二流體是氣體,且該混合器包含一罩入一混合裝置的混合室,該混合裝置被安排以混合該第一氣體和該第二氣體。
- 如申請專利範圍第1項之氣體源組件,更包含一稀釋流 體混合物排放線路,其中該監視器裝設在該稀釋流體混合物排放線路中。
- 如申請專利範圍第1項之氣體源組件,其中該監視器包含一TPIR監視器。
- 一種提供一氣體源組成以用於一流體利用處理的方法,該一氣體源組成係依據申請專利範圍第1至2項中任一項。
- 如申請專利範圍第14項之方法,其中該流體利用處理包含一半導體處理。
- 如申請專利範圍第15項之方法,其中該半導體處理包含離子植入、化學氣相沉積、磊晶摻雜、及蝕刻的一或更多者。
- 一種流體供應方法,包含下列步驟:(a)混合第一和第二流體以形成預定濃度之一氣體混合物,其中該第一流體包含選自從胂、膦、三氟化氮、氨、一氧化二氮、六氟化鎢、氯化氫、氯、溴化氫、乙硼烷、甲烷、乙烯、氯仿、丙烷、丁烷、六氟化硫、氟、氟化銨、磷酸銨、氫氧化銨、硼烷、三氟化硼、三氯化硼、二氯矽烷、鍺烷、四氟代甲烷、三氟甲烷、二氟甲烷、甲基氟、六氟 乙烷、全氟丙烷、辛二氟環丁烷、氧化氮、矽烷、四氯化矽、四氟化矽、三氯矽烷、硒化二氫、及有機金屬試劑氣體構成之群組的至少一流體類;以及該第二流體包含選自從氮、氬、氦、空氣、氪、氙、氙鹵化物、氫、氧、氨、及氣態有機金屬複合物構成之群組的至少一流體類,其中當該第二流體從氫構成時,該第一流體不是從胂構成;(b)使預定濃度之該氣體混合物流動至一流體利用處理以作為其源流體;(c)反應地調變混合以維持在該多組份氣體混合物中該至少一第一混合流體的濃度於預定程度;(d)監視至少一第二混合流體之壓力;以及(e)反應地調變至少一第二混合流體的流量以維持在混合步驟中該多組份氣體混合物之恆定壓力於預定程度。
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Also Published As
Publication number | Publication date |
---|---|
JP2008543563A (ja) | 2008-12-04 |
US9666435B2 (en) | 2017-05-30 |
US20130330917A1 (en) | 2013-12-12 |
TWI402098B (zh) | 2013-07-21 |
US20100224264A1 (en) | 2010-09-09 |
TW200711720A (en) | 2007-04-01 |
WO2007002288A3 (en) | 2007-04-05 |
WO2007002288A2 (en) | 2007-01-04 |
KR101241922B1 (ko) | 2013-03-11 |
TW201402203A (zh) | 2014-01-16 |
KR20080032113A (ko) | 2008-04-14 |
EP1899040A2 (en) | 2008-03-19 |
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