JP5385289B2 - 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 - Google Patents

横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 Download PDF

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JP5385289B2
JP5385289B2 JP2010527146A JP2010527146A JP5385289B2 JP 5385289 B2 JP5385289 B2 JP 5385289B2 JP 2010527146 A JP2010527146 A JP 2010527146A JP 2010527146 A JP2010527146 A JP 2010527146A JP 5385289 B2 JP5385289 B2 JP 5385289B2
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tft
grain boundaries
film
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JP2010541250A (ja
JP2010541250A5 (enExample
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ジェイムズ エス イム
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ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2010527146A 2007-09-25 2008-09-25 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 Expired - Fee Related JP5385289B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US99519907P 2007-09-25 2007-09-25
US60/995,199 2007-09-25
PCT/US2008/077704 WO2009042784A1 (en) 2007-09-25 2008-09-25 Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films

Publications (3)

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JP2010541250A JP2010541250A (ja) 2010-12-24
JP2010541250A5 JP2010541250A5 (enExample) 2013-05-02
JP5385289B2 true JP5385289B2 (ja) 2014-01-08

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Country Link
US (1) US8415670B2 (enExample)
JP (1) JP5385289B2 (enExample)
KR (1) KR20100074179A (enExample)
TW (1) TWI418037B (enExample)
WO (1) WO2009042784A1 (enExample)

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US7985990B2 (en) * 2008-08-12 2011-07-26 Texas Instruments Incorporated Transistor layout for manufacturing process control
TWI459444B (zh) 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理
JP5181396B2 (ja) * 2010-01-15 2013-04-10 独立行政法人産業技術総合研究所 単結晶育成装置および単結晶育成方法
KR101107166B1 (ko) * 2010-03-12 2012-01-25 삼성모바일디스플레이주식회사 비정질 실리콘막의 결정화 방법
KR101777289B1 (ko) * 2010-11-05 2017-09-12 삼성디스플레이 주식회사 연속측면고상화(Ｓｅｑｕｅｎｔｉａｌ Ｌａｔｅｒａｌ Ｓｏｌｉｄｉｆｉｃａｔｉｏｎ:ＳＬＳ)를 이용한 결정화 장치
CN104465673B (zh) * 2014-12-30 2018-02-23 京东方科技集团股份有限公司 阵列基板及其制造方法、以及显示装置
CN106684091A (zh) * 2015-11-09 2017-05-17 上海和辉光电有限公司 显示面板、阵列基板及其制造方法

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WO2009042784A1 (en) 2009-04-02
US20100270557A1 (en) 2010-10-28
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