JP2010541250A - 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 29
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- 239000013078 crystal Substances 0.000 claims abstract description 65
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- 230000008018 melting Effects 0.000 claims description 11
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- 239000012528 membrane Substances 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 4
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- 230000003287 optical effect Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 description 18
- 238000002425 crystallisation Methods 0.000 description 14
- 230000008025 crystallization Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 9
- 238000007711 solidification Methods 0.000 description 9
- 230000008023 solidification Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
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- 239000000155 melt Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 230000004888 barrier function Effects 0.000 description 2
- 238000012407 engineering method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
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- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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Abstract
【選択図】図4
Description
垂直スパン=W*tan(θ)=mλ (1)
を満たす。ここで、θは縁の傾斜角度であり、mは1または別の整数に近い値によって選択される。
垂直スパン=W*sin(θ)=mλ (2)
になるように選択されうる。ここで、θは傾斜角度であり、mは整数か、または、整数に近い数字である。図1Bおよび1Cは、膜上に形成されるTFTが、式(2)に従って傾斜するシステムを示す。具体的には、TFT150〜152は、垂直スパン156が間隔λに近くなるよう、すなわち、式(2)のmが1に近くなるよう、角度θ1bで傾斜する。TFT190〜192は、垂直スパン196が間隔λの2倍に近くなるよう、すなわち、式(2)のmが2に近くなるよう、角度θ1cでさらに傾斜する。図1Cはまた、TFT190用のソースおよびドレインエリア223が、膜に対して同じ傾斜角度θ1cで生成されることを示す。影付きエリアは、2つの結晶粒界を含むエリアを示し、影無しエリアは、1つの結晶粒界を含むエリアを示す。見られるように、同じ角度で傾斜し、かつ、膜上でランダムに位置付けられるTFTの各セットについて、影付きエリアは、TFT内部の周りで移動しうるが、影付き総面積と影無し総面積は、各セット150〜152および190〜192内で一定のままである。傾斜エンジニアリングは、処理された薄膜上でチャネル領域自体の配置を傾斜させることによって、または別法として、SLS処理中に、傾斜した周期的粒構造を含む薄膜を作製することによって達成されうる。両方の代替法の組合せもまた、使用されうる。例示的な傾斜エンジニアリングプロセスおよびシステムは、「Polycrystalline TFT uniformity through mis-alignment」という名称の権利者が共通の米国特許第7,160,763号に記載される。
垂直スパン=W*tan(θ)/n=mλ (3)
を満たす。ここで、nはサブ縁の数であり、mは整数に近い値を有するように選択される。具体的には、図5の場合、nの値は6であり、mの値は1に近い。一部の実施形態では、サブ縁は、異なる角度を有する。ランダムに配置された異なるTFT間にほぼ一定数の交差結晶粒界を提供する他の幾何形状が考慮されてもよい。
Claims (22)
- 薄膜トランジスタ(TFT)であって、
結晶基板内に配設されるチャネルエリアを備え、前記結晶基板は、互いにほぼ平行であり、かつ、ほぼ等しい間隔λだけ離間する複数の結晶粒界を備え、
前記チャネルエリアの形状は非等角多角形を含み、前記多角形は、前記複数の結晶粒界に実質的に垂直に配向する2つの対向する側部縁ならびに上側縁および下側縁を有し、前記上側および下側縁のそれぞれの少なくとも一部分は、前記複数の結晶粒界に対して、0°より大きくかつ90°以下である傾斜角度で配向し、前記上側および下側縁のそれぞれの縁の前記一部分に対する傾斜角度は、前記多角形によって覆われる結晶粒界の数が、前記結晶基板内の前記チャネルエリアのロケーションに無関係であるように選択されるTFT。 - 前記多角形は凹多角形を含む請求項1に記載のTFT。
- 前記多角形は凸多角形を含む請求項1に記載のTFT。
- 前記上側および下側縁のそれぞれの縁の前記部分に対する傾斜角度は同じである請求項1に記載のTFT。
- 前記上側および下側縁のそれぞれの縁の前記部分に対する傾斜角度は異なる請求項1に記載のTFT。
- 前記多角形は平行四辺形を含む請求項1に記載のTFT。
- 前記上側および下側縁は、互いに実質的に平行であり、前記平行四辺形の前記上側および下側縁に対する傾斜角度は、前記上側および下側縁のそれぞれに対する垂直スパンが、前記結晶粒界間の間隔のほぼ整数倍であるように選択される請求項6に記載のTFT。
- 前記上側および下側縁に対する傾斜角度θ、前記結晶粒界間のほぼ等しい間隔λ、および前記2つの側部縁間の距離Wは、式W*tan(θ)=mλを満たし、mの値はほぼ整数である請求項7に記載のTFT。
- mはほぼ1である請求項7に記載のTFT。
- mは1より大きいほぼ整数である請求項7に記載のTFT。
- 前記多角形は四辺形を含む請求項1に記載のTFT。
- 前記四辺形の前記上側および下側縁は、互いに平行でなく、前記平行四辺形の前記上側および下側縁に対する傾斜角度は、前記上側および下側縁に対する前記垂直スパンが、前記結晶粒界間の間隔の異なるほぼ整数倍であるよう異なるように選択される請求項11に記載のTFT。
- 前記四辺形の前記上側縁または前記下側縁に対する傾斜角度θ、前記結晶粒界間のほぼ等しい間隔λ、および前記2つの側部縁間の距離Wは、式W*tan(θ)=mλを満たし、mの値はほぼ整数である請求項12に記載のTFT。
- ソースエリアおよびドレイエリアをさらに備え、それぞれのエリアは、前記上側および下側縁の一方に隣接する請求項1に記載のTFT。
- 前記上側および下側縁の少なくとも一方は、複数の線分を備え、前記1つまたは複数の線分は、前記複数の結晶粒界に対して、0°より大きくかつ90°以下である傾斜角度を有し、前記1つまたは複数の線分のそれぞれに対する傾斜角度は、前記多角形によって覆われる結晶粒界の数が、前記結晶基板内の前記チャネルエリアのロケーションに無関係であるように選択される請求項1に記載のTFT。
- 前記1つまたは複数の線分のそれぞれに対する傾斜角度は、前記線分の垂直スパンが、前記結晶粒界間の間隔のほぼ整数倍であるように選択される請求項12に記載のTFT。
- 前記上側および下側縁の一方は、それぞれが同じ傾斜角度θを有するnの線分からなり、第1側部縁の端部を第2側部縁の端部に接続し、前記2つの側部縁間の距離Wについて、前記傾斜角度θは、式W*tan(θ)/n=mλを満たし、mの値は整数に近い、請求項12に記載のTFT。
- 膜を処理するシステムであって、
レーザビームパルスのシーケンスを供給するレーザ源と、
各レーザビームパルスを、一組の成形されたビームレットに成形するレーザ光学部品であって、前記ビームレットはそれぞれ、y方向を規定する長さ、x方向を規定する幅、および、照射領域において膜をその厚さ全体にわたって実質的に溶融させるのに十分なフルエンスを有し、さらに、隣接するビームレットからx方向に所定のギャップだけ離間する、レーザ光学部品と、
前記膜を支持し、少なくとも前記x方向に併進することが可能なステージとを備え、
前記長さと前記幅の比はほぼ1であるシステム。 - 多結晶膜を調製する方法であって、
基板であって、基板上に配設された、レーザ誘起溶融が可能な薄膜を有する、基板を設けること、
前記膜を照射するレーザビームを生成することであって、前記レーザビームは、前記膜の照射部分がその厚さ全体にわたって溶融するようにさせるラインビームであり、前記膜の照射部分は、長軸および短軸を有し、さらに、前記レーザビームは、強度プロファイルであって、前記レーザビームの強度が前記短軸の第1端部から前記短軸の第2端部まで変化するように非対称である、強度プロファイルを有する、生成すること、
前記膜の第1部分を、前記レーザビームによって前記第1部分を照射することによって溶融させること、
前記第1部分を横方向に固化させることを可能にすることであって、前記固化した第1部分は、横方向に成長した結晶粒の第1柱状体および第2柱状体を含み、前記第1柱状体は、前記短軸の前記第1端部を覆う前記第1部分の第1側面上で前記長軸に平行に形成され、前記第2柱状体は、前記短軸の前記第2端部を覆う前記第1部分の第2側面上で前記長軸に平行に形成され、前記短軸の方向に測定されると、前記第1柱状体内の結晶粒の第1平均長は、前記第2柱状体内の結晶粒の第2平均長より大きい、可能にすること、および、
前記膜の第2部分を、前記レーザビームによって前記第2部分を照射することによって溶融させることであって、前記第2部分は、前記第1部分に対してある変位量だけ横方向に変位し、前記変位は、前記短軸に平行で、かつ、前記短軸の前記第2端部から前記第1端部へ向かう方向であり、さらに、前記変位の値は、前記第2平均長より大きく、かつ、前記1平均長と前記第2平均長の和より小さい、溶融させることを含む方法。 - 前記レーザビームの前記強度プロファイルは直線プロファイルであり、前記直線プロファイルは、前記短軸の前記第1端部から前記短軸の前記第2端部まで直線的に変化し、前記長軸に沿ってほぼ一定のままである請求項19に記載の方法。
- 結晶基板内に配設された複数の薄膜トランジスタ(TFT)を使用する方法であって、前記結晶基板は、互いにほぼ平行であり、かつ、ほぼ等しい間隔だけ離間する複数の結晶粒界を含み、
前記複数のTFTの各TFTのチャネル電流によって交差される結晶粒界の数がほぼ同じであるように、前記複数のTFTの各TFTを通して前記チャネル電流が流れるようにさせることを含む方法。 - 結晶基板上に複数の薄膜トランジスタ(TFT)を製造する方法であって、前記複数のTFTは、結晶基板内に配設され、前記結晶基板は、互いにほぼ平行であり、かつ、ほぼ等しい間隔λだけ離間する複数の結晶粒界を有し、
前記複数のTFTの各TFTのチャネル領域を、非等角多角形を含む形状で形成することを含み、前記多角形は、前記複数の結晶粒界に実質的に垂直に配向する2つの対向する側部縁ならびに上側縁および下側縁を有し、前記上側および下側縁のそれぞれの少なくとも一部分は、前記複数の結晶粒界に対して、0°より大きくかつ90°以下である傾斜角度で配向し、前記上側および下側縁のそれぞれの縁の前記部分に対する傾斜角度は、前記多角形によって覆われる結晶粒界の数が、前記結晶基板内の前記チャネルエリアのロケーションに無関係であるように選択される方法。
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PCT/US2008/077704 WO2009042784A1 (en) | 2007-09-25 | 2008-09-25 | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
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KR101107166B1 (ko) * | 2010-03-12 | 2012-01-25 | 삼성모바일디스플레이주식회사 | 비정질 실리콘막의 결정화 방법 |
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CN106684091A (zh) * | 2015-11-09 | 2017-05-17 | 上海和辉光电有限公司 | 显示面板、阵列基板及其制造方法 |
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WO2009042784A1 (en) | 2009-04-02 |
US20100270557A1 (en) | 2010-10-28 |
KR20100074179A (ko) | 2010-07-01 |
TWI418037B (zh) | 2013-12-01 |
TW200939481A (en) | 2009-09-16 |
JP5385289B2 (ja) | 2014-01-08 |
US8415670B2 (en) | 2013-04-09 |
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