JP5380266B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5380266B2
JP5380266B2 JP2009286485A JP2009286485A JP5380266B2 JP 5380266 B2 JP5380266 B2 JP 5380266B2 JP 2009286485 A JP2009286485 A JP 2009286485A JP 2009286485 A JP2009286485 A JP 2009286485A JP 5380266 B2 JP5380266 B2 JP 5380266B2
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layer
substrate
support
peeled
curvature
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Japanese (ja)
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JP2010135802A (ja
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舜平 山崎
雅一 村上
徹 高山
純矢 丸山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
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    • G02F1/1362—Active matrix addressed cells
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  • Physics & Mathematics (AREA)
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  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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JP2009286485A 2001-12-28 2009-12-17 半導体装置 Expired - Fee Related JP5380266B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009286485A JP5380266B2 (ja) 2001-12-28 2009-12-17 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001402016 2001-12-28
JP2001402016 2001-12-28
JP2009286485A JP5380266B2 (ja) 2001-12-28 2009-12-17 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002376605A Division JP4567941B2 (ja) 2001-12-28 2002-12-26 半導体装置の作製方法及び表示装置の作製方法

Related Child Applications (1)

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JP2012276648A Division JP5581374B2 (ja) 2001-12-28 2012-12-19 発光装置

Publications (2)

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JP2010135802A JP2010135802A (ja) 2010-06-17
JP5380266B2 true JP5380266B2 (ja) 2014-01-08

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Family Applications (11)

Application Number Title Priority Date Filing Date
JP2009286485A Expired - Fee Related JP5380266B2 (ja) 2001-12-28 2009-12-17 半導体装置
JP2012276648A Expired - Fee Related JP5581374B2 (ja) 2001-12-28 2012-12-19 発光装置
JP2014092354A Expired - Fee Related JP5764694B2 (ja) 2001-12-28 2014-04-28 発光装置
JP2015057851A Expired - Fee Related JP6034902B2 (ja) 2001-12-28 2015-03-20 発光装置の作製方法
JP2016092866A Expired - Lifetime JP6298848B2 (ja) 2001-12-28 2016-05-04 発光装置
JP2017151352A Withdrawn JP2018005240A (ja) 2001-12-28 2017-08-04 半導体装置の作製方法
JP2018032066A Expired - Lifetime JP6445724B2 (ja) 2001-12-28 2018-02-26 発光装置
JP2018197151A Expired - Lifetime JP6688363B2 (ja) 2001-12-28 2018-10-19 発光装置
JP2018206417A Withdrawn JP2019033095A (ja) 2001-12-28 2018-11-01 半導体装置の作製方法
JP2020105944A Expired - Lifetime JP6963061B2 (ja) 2001-12-28 2020-06-19 発光装置、及び、自動車
JP2021076414A Withdrawn JP2021152656A (ja) 2001-12-28 2021-04-28 自動車、及び、表示装置

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Families Citing this family (248)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6661096B1 (en) * 1999-06-29 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6965124B2 (en) * 2000-12-12 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of fabricating the same
JP3812368B2 (ja) * 2001-06-06 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
TW594947B (en) 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
US7887408B2 (en) * 2002-05-23 2011-02-15 Igt Apparatus having movable display and methods of operating same
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101079757B1 (ko) 2002-10-30 2011-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US7333072B2 (en) * 2003-03-24 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device
JP4197447B2 (ja) * 2003-03-31 2008-12-17 富士フイルム株式会社 有機電界発光素子の製造方法及びその有機電界発光素子
US6979242B2 (en) * 2003-05-29 2005-12-27 Chungwha Picture Tubes, Ltd. Manufacturing method and structure of copper lines for a liquid crystal panel
TW200507131A (en) * 2003-07-02 2005-02-16 North Corp Multi-layer circuit board for electronic device
DE10339941A1 (de) * 2003-08-29 2005-03-24 BSH Bosch und Siemens Hausgeräte GmbH Kältegerät mit OLED-Display
JP4627140B2 (ja) * 2003-10-17 2011-02-09 株式会社 日立ディスプレイズ 表示装置
CN100489569C (zh) 2003-10-28 2009-05-20 株式会社半导体能源研究所 制作光学膜的方法
EP1528594B1 (en) * 2003-10-28 2019-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2005158373A (ja) * 2003-11-25 2005-06-16 Toyota Industries Corp 発光デバイス及び当該デバイスの製造方法
WO2005052893A1 (en) 2003-11-28 2005-06-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7405665B2 (en) * 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
WO2005071608A1 (en) * 2004-01-23 2005-08-04 Semiconductor Energy Laboratory Co., Ltd. Id label, id card, and id tag
DE102004005370B4 (de) * 2004-02-03 2007-08-16 Samsung SDI Co., Ltd., Suwon Elektrisches Gerät mit einem Gehäuse und einem OLED-Anzeigeelement sowie Verfahren zu dessen Herstellung
US7094666B2 (en) * 2004-07-29 2006-08-22 Silicon Genesis Corporation Method and system for fabricating strained layers for the manufacture of integrated circuits
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
KR100669778B1 (ko) * 2004-11-20 2007-01-16 삼성에스디아이 주식회사 기판 및 박막 트랜지스터를 구비한 기판
US7307006B2 (en) * 2005-02-28 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7368307B2 (en) * 2005-06-07 2008-05-06 Eastman Kodak Company Method of manufacturing an OLED device with a curved light emitting surface
US7262112B2 (en) * 2005-06-27 2007-08-28 The Regents Of The University Of California Method for producing dislocation-free strained crystalline films
FR2891281B1 (fr) * 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
US20080007936A1 (en) * 2006-07-05 2008-01-10 Jie Liu Organic illumination source and method for controlled illumination
US20100047959A1 (en) * 2006-08-07 2010-02-25 Emcore Solar Power, Inc. Epitaxial Lift Off on Film Mounted Inverted Metamorphic Multijunction Solar Cells
US8048777B2 (en) 2006-09-29 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
WO2008047619A1 (en) * 2006-10-18 2008-04-24 Nec Corporation Circuit substrate device and circuit substrate module device
KR100824880B1 (ko) * 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824881B1 (ko) * 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100833738B1 (ko) * 2006-11-30 2008-05-29 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824902B1 (ko) * 2006-12-13 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7804421B2 (en) * 2007-02-21 2010-09-28 Audiovox Corporation Vehicle safety system
US8716850B2 (en) * 2007-05-18 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CA2689937C (en) * 2007-06-05 2015-01-27 Magna International Inc. Oled trim panel
JP5142831B2 (ja) * 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP5094250B2 (ja) * 2007-07-10 2012-12-12 株式会社ジャパンディスプレイイースト 表示装置
JP2009141093A (ja) * 2007-12-06 2009-06-25 Toshiba Corp 発光素子及び発光素子の製造方法
KR20090060624A (ko) * 2007-12-10 2009-06-15 삼성전자주식회사 표시 기판 및 표시 장치
US20090218041A1 (en) * 2008-02-29 2009-09-03 Motorola, Inc. Method for manufacturing a portable electronic device housing
RU2507637C2 (ru) * 2008-03-26 2014-02-20 Конинклейке Филипс Электроникс Н.В. Устройство светоизлучающего диода
US8309432B2 (en) 2008-05-30 2012-11-13 Alta Devices, Inc. Epitaxial lift off stack having a universally shrunk handle and methods thereof
EP2281300A4 (en) * 2008-05-30 2013-07-17 Alta Devices Inc METHOD AND DEVICE FOR A CHEMICAL STEAM SEPARATION REACTOR
US7863145B2 (en) * 2008-09-19 2011-01-04 Semiconductor Manufacturing International (Shanghai) Corporation Method and resulting structure using silver for LCOS devices
WO2010036776A2 (en) * 2008-09-24 2010-04-01 Alliance For Sustainable Energy, Llc Thin film electronic devices with conductive and transparent gas and moisture permeation barriers
WO2010042931A2 (en) * 2008-10-10 2010-04-15 Alta Devices, Inc. Mesa etch method and composition for epitaxial lift off
CN102246273A (zh) * 2008-10-10 2011-11-16 奥塔装置公司 连续进给式化学气相沉积
JP2010153813A (ja) 2008-11-18 2010-07-08 Semiconductor Energy Lab Co Ltd 発光装置及びその作製方法、並びに、携帯電話機
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
WO2010077616A2 (en) * 2008-12-08 2010-07-08 Alta Devices, Inc. Multiple stack deposition for epitaxial lift off
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
CN102301456A (zh) 2008-12-17 2011-12-28 奥塔装置公司 基于带的外延剥离设备和方法
US8778199B2 (en) 2009-02-09 2014-07-15 Emoore Solar Power, Inc. Epitaxial lift off in inverted metamorphic multijunction solar cells
KR20110122847A (ko) 2009-02-17 2011-11-11 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광학 제어 장치 및 그의 제조 방법
CA2756857C (en) 2009-02-27 2015-08-11 Alta Devices, Inc. Tiled substrates for deposition and epitaxial lift off processes
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
JP5265000B2 (ja) 2009-04-30 2013-08-14 三菱電機株式会社 表示装置
US8911653B2 (en) 2009-05-21 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
GB0909721D0 (en) * 2009-06-05 2009-07-22 Plastic Logic Ltd Dielectric seed layer
US8575646B1 (en) * 2009-06-11 2013-11-05 Applied Lighting Solutions, LLC Creating an LED package with optical elements by using controlled wetting
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US8576209B2 (en) 2009-07-07 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US11393683B2 (en) 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials
US8691663B2 (en) * 2009-11-06 2014-04-08 Alliance For Sustainable Energy, Llc Methods of manipulating stressed epistructures
KR101073566B1 (ko) * 2009-12-07 2011-10-17 삼성모바일디스플레이주식회사 유기 발광 표시장치의 제조 방법
CN101980393A (zh) * 2010-09-21 2011-02-23 福建钧石能源有限公司 大面积柔性光电器件的制造方法
JP2012108310A (ja) * 2010-11-17 2012-06-07 Toshiba Mobile Display Co Ltd 非平面形状ディスプレイ及びその製造方法
US9722212B2 (en) * 2011-02-14 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof
WO2012155099A1 (en) * 2011-05-12 2012-11-15 Universal Display Corporation Flexible lighting devices
JP2013076753A (ja) * 2011-09-29 2013-04-25 Sumitomo Osaka Cement Co Ltd 光導波路素子及びその製造方法
US10245776B2 (en) * 2011-09-30 2019-04-02 Apple Inc. Methods for forming electronic devices with bent display edges
JP5907722B2 (ja) 2011-12-23 2016-04-26 株式会社半導体エネルギー研究所 発光装置の作製方法
US9439315B2 (en) 2012-06-29 2016-09-06 Samsung Display Co., Ltd. Display device, and method and apparatus for manufacturing the same
KR20140002470A (ko) 2012-06-29 2014-01-08 삼성디스플레이 주식회사 디스플레이 장치, 디스플레이 장치의 제조방법, 디스플레이 장치의 제조장치
KR102481056B1 (ko) 2012-08-10 2022-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 장치
CN104584109B (zh) 2012-09-03 2017-12-22 株式会社半导体能源研究所 显示装置及电子装置
US9288294B2 (en) * 2012-10-19 2016-03-15 Htc Corporation Handheld electronic device and method for assembling display panel thereof
KR102009724B1 (ko) * 2012-10-29 2019-08-13 삼성디스플레이 주식회사 플렉서블 표시 장치 및 표시 장치의 휘도 보정 방법
TWI500090B (zh) * 2012-11-13 2015-09-11 矽品精密工業股份有限公司 半導體封裝件之製法
US8941128B2 (en) * 2012-11-21 2015-01-27 Intel Corporation Passivation layer for flexible display
GB2508837A (en) * 2012-12-12 2014-06-18 Univ Warwick Multilayer manufacturing method utilising mould
US11327626B1 (en) 2013-01-25 2022-05-10 Steelcase Inc. Emissive surfaces and workspaces method and apparatus
US9759420B1 (en) * 2013-01-25 2017-09-12 Steelcase Inc. Curved display and curved display support
US9261262B1 (en) 2013-01-25 2016-02-16 Steelcase Inc. Emissive shapes and control systems
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105144841B (zh) 2013-04-15 2017-11-17 株式会社半导体能源研究所 发光装置
KR20240014622A (ko) 2013-04-24 2024-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN105247598B (zh) 2013-05-21 2017-12-26 夏普株式会社 显示装置的制造方法、显示装置以及膜器件
KR20140141400A (ko) 2013-05-29 2014-12-10 삼성전자주식회사 디스플레이 장치
CA2953701C (en) * 2013-06-28 2022-11-22 Solarwindow Technologies, Inc. Preparation and coating of three-dimensional objects with organic optoelectronic devices including electricity-generating organic photovoltaic films using thin flexible substrates with pressure-sensitive adhesives
CN105158957A (zh) * 2013-07-03 2015-12-16 京东方科技集团股份有限公司 一种柔性显示器的制备方法和柔性显示器
US11145164B2 (en) * 2013-07-23 2021-10-12 Gemini Digital Development Gaming machine having peripheral reels, a selectively transparent front display, and motor driven reels behind the front display
TWI685026B (zh) 2013-08-06 2020-02-11 日商半導體能源研究所股份有限公司 剝離方法
TWI618131B (zh) 2013-08-30 2018-03-11 半導體能源研究所股份有限公司 剝離起點形成裝置及形成方法、疊層體製造裝置
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US9496522B2 (en) * 2013-12-13 2016-11-15 Universal Display Corporation OLED optically coupled to curved substrate
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
KR20240147702A (ko) 2013-11-15 2024-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9430180B2 (en) 2013-11-15 2016-08-30 Semiconductor Energy Laboratory Co., Ltd Display panel and electronic device
WO2015077629A1 (en) 2013-11-21 2015-05-28 Atom Nanoelectronics, Inc. Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays
TWI799316B (zh) 2013-11-29 2023-04-11 日商半導體能源研究所股份有限公司 可攜資料處理裝置
JP2015129917A (ja) 2013-12-02 2015-07-16 株式会社半導体エネルギー研究所 情報処理装置
DE202013105597U1 (de) 2013-12-10 2014-02-12 Odelo Gmbh Leuchtmittel und hiermit ausgestattete Kraftfahrzeugleuchte
CN105793957B (zh) 2013-12-12 2019-05-03 株式会社半导体能源研究所 剥离方法及剥离装置
CA2934528C (en) 2013-12-17 2022-06-28 Marsupial Holdings Inc. Integrated microoptic imager, processor, and display
TW201526718A (zh) 2013-12-17 2015-07-01 中華映管股份有限公司 可撓性元件基板以及其製作方法
EP2886936A1 (de) 2013-12-23 2015-06-24 odelo GmbH Leuchtmittel und hiermit ausgestattete Kraftfahrzeugleuchte
EP2900039B1 (de) 2014-01-27 2020-11-04 odelo GmbH Leuchtmittel und hiermit ausgestattete Kraftfahrzeugleuchte sowie Verfahren zu deren Betrieb
SI2900038T1 (sl) 2014-01-27 2017-05-31 Odelo Gmbh Svetilno sredstvo in z njim opremljena luč motornega vozila
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
GB2527271A (en) 2014-04-07 2015-12-23 Ujett D P Ltd Coated optical substrates
KR20190111163A (ko) 2014-05-06 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 장치
CN103985321B (zh) * 2014-05-29 2018-03-27 上海天马微电子有限公司 一种柔性显示面板及其制作方法及柔性显示装置
CN104022062B (zh) * 2014-06-12 2016-08-17 京东方科技集团股份有限公司 一种柔性显示面板的制备方法
CN105336875B (zh) * 2014-07-10 2017-10-13 上海和辉光电有限公司 柔性显示器件及其离型方法
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
US9977464B2 (en) * 2014-08-27 2018-05-22 Apple Inc. Sapphire cover for electronic devices
JP2016066607A (ja) * 2014-09-18 2016-04-28 株式会社半導体エネルギー研究所 剥離方法、発光装置、モジュール、及び電子機器
WO2016059514A1 (en) 2014-10-17 2016-04-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP2016085457A (ja) 2014-10-24 2016-05-19 株式会社半導体エネルギー研究所 電子機器
TW201616467A (zh) 2014-10-31 2016-05-01 中華映管股份有限公司 曲面裝飾板以及曲面顯示裝置的製作方法
US9743513B2 (en) 2014-12-26 2017-08-22 Industrial Technology Research Institute Flexible electronic device
CN104576965B (zh) * 2014-12-29 2017-02-22 北京维信诺科技有限公司 一种可首尾电连接的柔性显示装置及其制备方法
CN104460124B (zh) * 2015-01-04 2017-04-05 京东方科技集团股份有限公司 曲面显示面板及其制作方法
EP3057149A1 (en) * 2015-02-11 2016-08-17 Nitto Europe N.V Kits comprising TOLED-containing multilayer films for providing windows with an image display
US20160250969A1 (en) * 2015-02-26 2016-09-01 Ford Global Technologies, Llc Vehicle mirage roof
US9933870B2 (en) * 2015-03-17 2018-04-03 Lg Display Co., Ltd. Back plate member for flexible display, display apparatus including the same, and method of manufacturing the same
EP2889754A3 (en) * 2015-03-20 2015-10-07 ABB Technology Oy Touchscreen, frequency converter and drive system
KR102294833B1 (ko) * 2015-05-08 2021-08-27 삼성디스플레이 주식회사 커브드 표시 장치
US10647890B2 (en) 2015-06-09 2020-05-12 Lg Chem, Ltd. Adhesive composition, adhesive film comprising same, and organic electronic device comprising same
JP6800485B2 (ja) * 2015-06-09 2020-12-16 エルジー・ケム・リミテッド 有機電子装置
CN105118844A (zh) * 2015-07-01 2015-12-02 深圳市华星光电技术有限公司 一种柔性显示面板的制备方法及柔性显示面板
JP6546024B2 (ja) * 2015-07-15 2019-07-17 株式会社小糸製作所 車両用灯具
EP3147554A1 (de) 2015-09-23 2017-03-29 odelo GmbH Oled umfassende lichtquelle für fahrzeugleuchten sowie verfahren zu deren herstellung
CN106739424B (zh) 2015-11-20 2020-02-14 财团法人工业技术研究院 取下贴合装置及应用此装置的取下方法与贴合方法
CN106793488B (zh) 2015-11-20 2019-04-30 财团法人工业技术研究院 软性电子装置与软性电子装置制作工艺方法
WO2017096058A1 (en) * 2015-12-01 2017-06-08 LUAN, Xinning Electron injection based vertical light emitting transistors and methods of making
FR3045505B1 (fr) * 2015-12-16 2017-12-22 Saint Gobain Pare-brise feuillete de vehicule avec signaletique lumineuse interne.
US10541374B2 (en) 2016-01-04 2020-01-21 Carbon Nanotube Technologies, Llc Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices
JP6822858B2 (ja) 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
JP6568603B2 (ja) * 2016-01-28 2019-08-28 鴻海精密工業股▲ふん▼有限公司 車両用画像表示システム及びその画像表示システムを搭載した車両
EP3426614B1 (en) 2016-03-09 2024-11-20 Corning Incorporated Cold forming of complexly curved glass articles
KR102449220B1 (ko) * 2016-03-21 2022-09-30 삼성디스플레이 주식회사 디스플레이 장치
JP6940974B2 (ja) 2016-05-10 2021-09-29 株式会社半導体エネルギー研究所 移動体
JP2017207747A (ja) * 2016-05-17 2017-11-24 株式会社半導体エネルギー研究所 表示システムおよび移動体
KR20190008183A (ko) * 2016-05-24 2019-01-23 다이니폰 인사츠 가부시키가이샤 조광 장치
TWI722048B (zh) 2016-06-10 2021-03-21 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR102544091B1 (ko) 2016-06-28 2023-06-16 코닝 인코포레이티드 장식 및 디스플레이 커버 적용(application)을 위한 커브드(curved) 몰딩된(molded) 플라스틱 표면에 대한 얇은 강화된 유리의 적층(laminating)
FR3053315A1 (fr) * 2016-06-29 2018-01-05 Airbus Operations Procede pour realiser une marque electroluminescente sur une paroi exterieure d’un aeronef, bande de marquage comprenant ladite marque electroluminescente et aeronef comprenant ladite marque electroluminescente
JP7071294B2 (ja) 2016-07-05 2022-05-18 コーニング インコーポレイテッド 冷間成形ガラス物品及びその組立方法
US9825007B1 (en) 2016-07-13 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure with molding layer and method for forming the same
US11469215B2 (en) 2016-07-13 2022-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure with molding layer and method for forming the same
WO2018037113A1 (de) 2016-08-26 2018-03-01 Osram Oled Gmbh Verfahren zur herstellung eines bauelementmoduls und bauelementmodul
EP3309854A1 (de) 2016-10-17 2018-04-18 odelo GmbH Oled umfassendes leuchtmittel für fahrzeugleuchte
DE102016119906B4 (de) * 2016-10-19 2025-12-31 Pictiva Displays International Limited Verfahren zum Herstellen einer optoelektronischen Vorrichtung
US10953644B2 (en) 2016-10-20 2021-03-23 Corning Incorporated Cold formed 3D cover glass articles and forming process to make the same
EP3532442A1 (en) 2016-10-25 2019-09-04 Corning Incorporated Cold-form glass lamination to a display
KR102301967B1 (ko) * 2016-12-01 2021-09-17 한국전자통신연구원 발광 장치의 제조 방법, 발광 장치, 및 창문
US10264213B1 (en) 2016-12-15 2019-04-16 Steelcase Inc. Content amplification system and method
CN106653815B (zh) * 2016-12-29 2019-09-27 上海天马微电子有限公司 一种有机发光显示面板及其制作方法、显示装置
CN110520331A (zh) 2016-12-30 2019-11-29 康宁公司 以玻璃覆盖的运载工具内部系统及其形成方法
US11016590B2 (en) 2017-01-03 2021-05-25 Corning Incorporated Vehicle interior systems having a curved cover glass and display or touch panel and methods for forming the same
TWI771357B (zh) 2017-01-03 2022-07-21 美商康寧公司 具有彎曲的覆蓋玻璃以及顯示器或觸控面板的車輛內部系統及其形成方法
US10712850B2 (en) 2017-01-03 2020-07-14 Corning Incorporated Vehicle interior systems having a curved cover glass and a display or touch panel and methods for forming the same
CN119286407A (zh) * 2017-01-17 2025-01-10 积水化学工业株式会社 填充接合材料、带有保护片的填充接合材料、层叠体、光学器件和光学器件用保护面板
JP6982287B2 (ja) * 2017-03-13 2021-12-17 株式会社Ｋ工房 画像表示パネル
WO2018179215A1 (ja) * 2017-03-30 2018-10-04 シャープ株式会社 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置、実装装置、コントローラ
US10847757B2 (en) 2017-05-04 2020-11-24 Carbon Nanotube Technologies, Llc Carbon enabled vertical organic light emitting transistors
US10665796B2 (en) 2017-05-08 2020-05-26 Carbon Nanotube Technologies, Llc Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
US10978640B2 (en) 2017-05-08 2021-04-13 Atom H2O, Llc Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
US11685684B2 (en) 2017-05-15 2023-06-27 Corning Incorporated Contoured glass articles and methods of making the same
KR102343573B1 (ko) * 2017-05-26 2021-12-28 삼성디스플레이 주식회사 플렉서블 디스플레이 장치
US12699470B2 (en) 2017-07-07 2026-08-04 Corning Incorporated Vehicle interior systems having a curved cover glass and a display or touch panel and methods for forming the same
CN111094050B (zh) 2017-07-18 2023-11-07 康宁公司 复杂弯曲玻璃制品的冷成型
CN111183123A (zh) 2017-09-12 2020-05-19 康宁公司 用于无电板玻璃的触知组件及其制造方法
US11065960B2 (en) * 2017-09-13 2021-07-20 Corning Incorporated Curved vehicle displays
TWI873668B (zh) 2017-09-13 2025-02-21 美商康寧公司 用於顯示器的基於光導器的無電面板、相關的方法及載具內部系統
TWI844520B (zh) 2017-10-10 2024-06-11 美商康寧公司 具有改善可靠性的彎曲的覆蓋玻璃的車輛內部系統及其形成方法
JP7270625B2 (ja) 2017-11-21 2023-05-10 コーニング インコーポレイテッド ヘッドアップディスプレイシステム用の非球面ミラー、及びその成形方法
CN107946247B (zh) * 2017-11-27 2020-03-17 武汉华星光电半导体显示技术有限公司 一种柔性阵列基板及其制作方法
TWI789463B (zh) 2017-11-30 2023-01-11 美商康寧公司 用於形成曲面鏡的真空模具設備、系統及方法
WO2019108016A1 (en) 2017-11-30 2019-06-06 Corning Precision Materials Co., Ltd. Systems and methods for vacuum-forming aspheric mirrors
CN108122495B (zh) * 2017-12-26 2020-05-05 武汉华星光电半导体显示技术有限公司 一种柔性显示面板和柔性显示器
WO2019169293A1 (en) 2018-03-02 2019-09-06 Corning Incorporated Anti-reflective coatings and articles and methods of forming the same
KR102491653B1 (ko) * 2018-03-08 2023-01-25 삼성디스플레이 주식회사 스트레처블 표시 장치
WO2019177952A1 (en) 2018-03-13 2019-09-19 Corning Incorporated Vehicle interior systems having a crack resistant curved cover glass and methods for forming the same
CN110390882B (zh) * 2018-04-20 2021-03-26 Oppo广东移动通信有限公司 曲面基层内贴合柔性屏的方法、电子装置及其曲面屏
KR102183673B1 (ko) 2018-05-17 2020-11-27 주식회사 엘지화학 광학 디바이스의 제조 방법
US11066008B2 (en) 2018-05-29 2021-07-20 Honda Motor Co., Ltd. Lighting through chrome plating or chrome-like surface treatments
KR20260027290A (ko) 2018-07-12 2026-02-27 코닝 인코포레이티드 색상 매칭을 위해 구성된 데드프론트
CN112566782A (zh) 2018-07-16 2021-03-26 康宁公司 具冷弯玻璃基板的车辆内部系统及其形成方法
EP3826974A1 (en) 2018-07-23 2021-06-02 Corning Incorporated Automotive interiors and cover glass articles with improved headform impact performance and post-breakage visibility
CN109037283A (zh) * 2018-07-25 2018-12-18 云谷（固安）科技有限公司 一种基板、显示面板、显示装置及显示面板的制备方法
EP3826877B1 (en) 2018-07-26 2025-10-08 Corning Incorporated Cold-formed curved glass articles and methods of making the same
JP7507744B2 (ja) 2018-08-20 2024-06-28 コーニング インコーポレイテッド ディスプレイまたはタッチパネル用に強化されたカバーガラス
CN109378325B (zh) 2018-09-14 2020-06-16 昆山国显光电有限公司 阵列基板、显示面板及阵列基板的制造方法
CN113165512A (zh) 2018-10-18 2021-07-23 康宁公司 用于汽车内部显示面板的框架
EP3867206B1 (en) 2018-10-18 2023-10-18 Corning Incorporated Strengthened glass articles exhibiting improved headform impact performance and automotive interior systems incorporating the same
EP4465126B1 (en) 2018-11-01 2025-12-17 Corning Incorporated Methods for uniform adhesive bondline control for 3d coldformed curved laminate
EP3880619B1 (en) 2018-11-16 2023-07-19 Corning Incorporated Glass ceramic devices and methods with tunable infrared transmittance
CN111199693A (zh) * 2018-11-20 2020-05-26 上海和辉光电有限公司 显示面板及其制程方法
CN116553809B (zh) 2018-11-21 2025-12-26 康宁公司 低存储拉伸能切割玻璃和优先裂纹碎裂玻璃
EP3888077B1 (en) 2018-11-29 2025-06-25 Corning Incorporated Dynamically adjustable display system and methods of dynamically adjusting a display
EP3887326B1 (en) 2018-11-29 2024-05-22 Corning Incorporated Adhering glass cover sheet to a frame
KR20210097747A (ko) 2018-11-30 2021-08-09 코닝 인코포레이티드 열적으로 매칭된 시스템을 갖는 냉간-성형 유리 물품 및 이를 형성하기 위한 공정
CN113632254B (zh) 2019-01-04 2026-07-21 阿汤姆H20有限责任公司 基于碳纳米管的射频设备
KR102145016B1 (ko) * 2019-02-28 2020-08-18 엘지전자 주식회사 반도체 발광 소자를 디스플레이 패널에 조립하는 조립 장치
CN109817834A (zh) * 2019-03-28 2019-05-28 京东方科技集团股份有限公司 柔性显示装置及其制备方法
US10906288B2 (en) * 2019-04-08 2021-02-02 Innolux Corporation Method for manufacturing display device
EP3771695A1 (en) 2019-07-31 2021-02-03 Corning Incorporated Method and system for cold-forming glass
US12466756B2 (en) 2019-10-08 2025-11-11 Corning Incorporated Curved glass articles including a bumper piece configured to relocate bending moment from display region and method of manufacturing same
JP7285506B2 (ja) 2019-10-18 2023-06-02 パナソニックＩｐマネジメント株式会社 ディスプレイ装置、移動体
CN112750365A (zh) * 2019-10-31 2021-05-04 华为技术有限公司 一种柔性显示屏及电子设备
KR20220111299A (ko) 2019-12-05 2022-08-09 아톰 에이치투오, 엘엘씨 단일벽 탄소 나노튜브 막과 그 제조 방법 및 제조 장치
CN111063259A (zh) * 2019-12-17 2020-04-24 武汉华星光电半导体显示技术有限公司 柔性显示装置
CN110930887A (zh) * 2019-12-25 2020-03-27 联想(北京)有限公司 一种制备方法、系统及折叠显示屏
KR102293405B1 (ko) * 2020-02-24 2021-08-26 연세대학교 산학협력단 스트레처블 발광소재를 이용한 유기전계 발광소자 및 그 제조방법
JP2021138342A (ja) * 2020-03-09 2021-09-16 株式会社デンソー 車載用表示装置
KR102813187B1 (ko) * 2020-03-12 2025-05-29 삼성디스플레이 주식회사 본딩 장치
US11772361B2 (en) 2020-04-02 2023-10-03 Corning Incorporated Curved glass constructions and methods for forming same
EP3922433A1 (en) * 2020-06-12 2021-12-15 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Thermoformed device with oled display and method of fabrication
CN115954261A (zh) * 2021-10-08 2023-04-11 长鑫存储技术有限公司 调平方法及半导体结构
US11908723B2 (en) * 2021-12-03 2024-02-20 International Business Machines Corporation Silicon handler with laser-release layers
CN115188703B (zh) * 2022-05-16 2025-09-19 绍兴中芯集成电路制造股份有限公司 一种soi晶圆及制造方法
FR3138566B1 (fr) * 2022-08-01 2025-03-14 Valeo Vision Module lumineux intégrant une diode électroluminescente organique flexible
WO2025212219A1 (en) * 2024-04-03 2025-10-09 Corning Incorporated Cold-formed oled displays and methods for fabricating the same
US20250360578A1 (en) * 2024-05-24 2025-11-27 Nanya Technology Corporation Wafer flattening system and method thereof

Family Cites Families (202)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US47280A (en) * 1865-04-18 Combined spittoon and foot-warmer
US32210A (en) * 1861-04-30 Rigging-clasp
JPS5538707A (en) * 1978-09-11 1980-03-18 Nippon Telegr & Teleph Corp <Ntt> Solidified illumination source
DE3538986C3 (de) 1985-11-02 1994-11-24 Deutsche Aerospace Verfahren zur Herstellung eines Solargenerators
US4883561A (en) * 1988-03-29 1989-11-28 Bell Communications Research, Inc. Lift-off and subsequent bonding of epitaxial films
JPH01287529A (ja) 1988-05-14 1989-11-20 Stanley Electric Co Ltd 液晶表示素子
JP2742290B2 (ja) 1989-03-24 1998-04-22 株式会社リコー 液晶表示素子
US5106181A (en) * 1989-04-12 1992-04-21 Rockwell Iii Marshall A Optical waveguide display system
JP2820965B2 (ja) 1989-08-04 1998-11-05 株式会社リコー 曲面液晶表示装置
BR9004528A (pt) 1989-09-12 1991-09-10 Petri Ag Conector de linha de corrente para contornar a interrupcao de condutores entre partes que giram uma contra a outra
JPH0626950Y2 (ja) * 1990-02-14 1994-07-20 スタンレー電気株式会社 Ｅｌ表示装置
JPH03283385A (ja) * 1990-03-30 1991-12-13 Hitachi Chem Co Ltd 薄膜エレクトロルミネッセンス表示装置
JPH0443389A (ja) 1990-06-11 1992-02-13 Matsushita Electric Ind Co Ltd 表示装置
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5396304A (en) 1990-12-31 1995-03-07 Kopin Corporation Slide projector mountable light valve display
US5376979A (en) 1990-12-31 1994-12-27 Kopin Corporation Slide projector mountable light valve display
US6072445A (en) 1990-12-31 2000-06-06 Kopin Corporation Head mounted color display system
US6593978B2 (en) 1990-12-31 2003-07-15 Kopin Corporation Method for manufacturing active matrix liquid crystal displays
US5362671A (en) 1990-12-31 1994-11-08 Kopin Corporation Method of fabricating single crystal silicon arrayed devices for display panels
US7075501B1 (en) * 1990-12-31 2006-07-11 Kopin Corporation Head mounted display system
US5444557A (en) 1990-12-31 1995-08-22 Kopin Corporation Single crystal silicon arrayed devices for projection displays
US5256562A (en) 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5317436A (en) 1990-12-31 1994-05-31 Kopin Corporation A slide assembly for projector with active matrix moveably mounted to housing
US6320568B1 (en) 1990-12-31 2001-11-20 Kopin Corporation Control system for display panels
US5475514A (en) 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5666175A (en) 1990-12-31 1997-09-09 Kopin Corporation Optical systems for displays
US5258320A (en) 1990-12-31 1993-11-02 Kopin Corporation Single crystal silicon arrayed devices for display panels
US5258325A (en) 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5861929A (en) 1990-12-31 1999-01-19 Kopin Corporation Active matrix color display with multiple cells and connection through substrate
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
US5376561A (en) 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5331149A (en) 1990-12-31 1994-07-19 Kopin Corporation Eye tracking system having an array of photodetectors aligned respectively with an array of pixels
US5499124A (en) 1990-12-31 1996-03-12 Vu; Duy-Phach Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material
US5661371A (en) 1990-12-31 1997-08-26 Kopin Corporation Color filter system for light emitting display panels
US5751261A (en) 1990-12-31 1998-05-12 Kopin Corporation Control system for display panels
US5528397A (en) 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US5743614A (en) 1990-12-31 1998-04-28 Kopin Corporation Housing assembly for a matrix display
US6627953B1 (en) 1990-12-31 2003-09-30 Kopin Corporation High density electronic circuit modules
US6143582A (en) 1990-12-31 2000-11-07 Kopin Corporation High density electronic circuit modules
JPH0590623A (ja) * 1991-09-28 1993-04-09 Nissha Printing Co Ltd 太陽電池用転写材
JP2701629B2 (ja) * 1991-11-01 1998-01-21 カシオ計算機株式会社 液晶表示装置およびその製造方法
US5420055A (en) 1992-01-22 1995-05-30 Kopin Corporation Reduction of parasitic effects in floating body MOSFETs
CA2126446C (en) 1992-01-22 2003-07-15 Duy-Phach Vu Single crystal silicon arrayed devices for projection displays
US6511187B1 (en) 1992-02-20 2003-01-28 Kopin Corporation Method of fabricating a matrix display system
US5692820A (en) 1992-02-20 1997-12-02 Kopin Corporation Projection monitor
US5467154A (en) 1992-02-20 1995-11-14 Kopin Corporation Projection monitor
EP0725939B1 (en) 1992-03-13 1999-05-26 Kopin Corporation Head-mounted display system
US5705424A (en) 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
JPH08501887A (ja) 1992-09-11 1996-02-27 コピン・コーポレーシヨン ディスプレイ・パネルのためのカラーフィルター・システム
EP0853254A3 (en) 1992-09-11 1998-10-14 Kopin Corporation Liquid crystal display
US6608654B2 (en) 1992-09-11 2003-08-19 Kopin Corporation Methods of fabricating active matrix pixel electrodes
JPH06259593A (ja) * 1992-09-29 1994-09-16 Hitachi Chem Co Ltd 情報識別装置
WO1994010794A1 (en) 1992-11-04 1994-05-11 Kopin Corporation Control system for projection displays
JP3238223B2 (ja) 1993-01-20 2001-12-10 株式会社東芝 液晶表示装置および表示装置
JPH06280026A (ja) 1993-03-24 1994-10-04 Semiconductor Energy Lab Co Ltd 成膜装置及び成膜方法
JPH0792501A (ja) 1993-07-30 1995-04-07 A G Technol Kk 画像表示用の基板とその製造方法、およびｔｆｔ表示素子
US5589406A (en) 1993-07-30 1996-12-31 Ag Technology Co., Ltd. Method of making TFT display
KR100333153B1 (ko) 1993-09-07 2002-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JPH07109573A (ja) 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
JPH07114347A (ja) 1993-10-14 1995-05-02 Alps Electric Co Ltd ディスプレイ装置およびその製造方法
KR100321541B1 (ko) 1994-03-09 2002-06-20 야마자끼 순페이 능동 매트릭스 디스플레이 장치의 작동 방법
JP3150840B2 (ja) 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH07272858A (ja) * 1994-03-31 1995-10-20 Nippondenso Co Ltd エレクトロルミネッセンス素子とその製造方法
DE4415132C2 (de) * 1994-04-29 1997-03-20 Siemens Ag Verfahren zur formgebenden Bearbeitung von dünnen Wafern und Solarzellen aus kristallinem Silizium
KR100213603B1 (ko) 1994-12-28 1999-08-02 가나이 쯔또무 전자회로기판의 배선수정방법 및 그 장치와 전자회로기판
JP3698749B2 (ja) 1995-01-11 2005-09-21 株式会社半導体エネルギー研究所 液晶セルの作製方法およびその作製装置、液晶セルの生産システム
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US5598067A (en) 1995-06-07 1997-01-28 Vincent; Kent Electroluminescent device as a source for a scanner
JP4063896B2 (ja) 1995-06-20 2008-03-19 株式会社半導体エネルギー研究所 有色シースルー光起電力装置
JP3493534B2 (ja) 1995-07-07 2004-02-03 カシオ計算機株式会社 液晶表示素子
US5817548A (en) 1995-11-10 1998-10-06 Sony Corporation Method for fabricating thin film transistor device
TW439003B (en) 1995-11-17 2001-06-07 Semiconductor Energy Lab Display device
TW309633B (enExample) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
DE19547691C1 (de) 1995-12-20 1997-04-24 Lohmann Therapie Syst Lts Verfahren zur Herstellung transdermaler therapeutischer Pflaster (TTS)
JPH09297316A (ja) 1996-05-08 1997-11-18 Hitachi Ltd 液晶装置
DE69707233T2 (de) 1996-05-28 2002-07-11 Koninklijke Philips Electronics N.V., Eindhoven Organische elektrolumineszente vorrichtung
JPH1020293A (ja) 1996-07-03 1998-01-23 Omron Corp 表示装置
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
JPH1039811A (ja) * 1996-07-24 1998-02-13 Tesac Corp 電界発光光源体
JP3809681B2 (ja) 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
CN1143394C (zh) * 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
JP3809710B2 (ja) 1997-07-03 2006-08-16 セイコーエプソン株式会社 薄膜素子の転写方法
JP4619461B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
USRE38466E1 (en) * 1996-11-12 2004-03-16 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JP3899566B2 (ja) 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
US5981306A (en) 1997-09-12 1999-11-09 The Trustees Of Princeton University Method for depositing indium tin oxide layers in organic light emitting devices
US6013982A (en) 1996-12-23 2000-01-11 The Trustees Of Princeton University Multicolor display devices
DE69738307T2 (de) 1996-12-27 2008-10-02 Canon K.K. Herstellungsverfahren eines Halbleiter-Bauelements und Herstellungsverfahren einer Solarzelle
US6013346A (en) 1997-01-28 2000-01-11 Buztronics, Inc. Display sticker with integral flasher circuit and power source
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
JP3386682B2 (ja) * 1997-02-17 2003-03-17 株式会社東芝 薄膜トランジスタ、論理ゲート装置および薄膜トランジスタアレイ
DE19708610A1 (de) 1997-03-03 1998-09-24 Siemens Ag Pixel-Matrix-Anzeigeeinrichtung für Transportsysteme
US6356376B1 (en) 1997-04-02 2002-03-12 Gentex Corporation Electrochromic rearview mirror incorporating a third surface metal reflector and a display/signal light
JPH1174075A (ja) 1997-06-19 1999-03-16 Tdk Corp 有機ｅｌ表示装置
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP4042182B2 (ja) 1997-07-03 2008-02-06 セイコーエプソン株式会社 Ｉｃカードの製造方法及び薄膜集積回路装置の製造方法
US5956181A (en) 1997-07-18 1999-09-21 Lin; William Two way mirror with dual functions of rear view mirror and video displayer
JP3878288B2 (ja) 1997-07-28 2007-02-07 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP3116085B2 (ja) 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JPH1199893A (ja) * 1997-09-30 1999-04-13 Mazda Motor Corp 車両用障害物検出装置
JPH11121751A (ja) * 1997-10-13 1999-04-30 Sanyo Electric Co Ltd 薄膜半導体装置の製造方法
JP3139426B2 (ja) * 1997-10-15 2001-02-26 日本電気株式会社 半導体装置
EP0917409B1 (en) 1997-11-17 2005-03-16 Molex Incorporated Electroluminescent lamp and method of fabrication
JPH11160734A (ja) 1997-11-28 1999-06-18 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH11198720A (ja) * 1998-01-14 1999-07-27 Harness Syst Tech Res Ltd 表示装置
JPH11198679A (ja) * 1998-01-14 1999-07-27 Harness Syst Tech Res Ltd 表示装置
CN1181569C (zh) 1998-02-02 2004-12-22 杜邦显示器股份有限公司 有机半导体图像传感器
US6476783B2 (en) 1998-02-17 2002-11-05 Sarnoff Corporation Contrast enhancement for an electronic display device by using a black matrix and lens array on outer surface of display
JPH11243209A (ja) 1998-02-25 1999-09-07 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器
JP3809733B2 (ja) 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP4126747B2 (ja) 1998-02-27 2008-07-30 セイコーエプソン株式会社 ３次元デバイスの製造方法
JP4547723B2 (ja) 1998-03-09 2010-09-22 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
JPH11321363A (ja) * 1998-05-18 1999-11-24 Toyota Motor Corp センターベアリングの取付構造
US6582996B1 (en) 1998-07-13 2003-06-24 Fujitsu Limited Semiconductor thin film forming method
JP2000105557A (ja) * 1998-09-30 2000-04-11 Mitsubishi Materials Corp Ｅｌ発光シートを用いる薄型曲面発光パネル及びその製造方法
WO2000023976A1 (en) 1998-10-16 2000-04-27 Sarnoff Corporation Linear array of light-emitting elements
JP2000177483A (ja) 1998-12-11 2000-06-27 Fujitsu Ten Ltd 車両の外部監視装置
US6506438B2 (en) 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
EP1157421A1 (en) 1999-02-05 2001-11-28 Alien Technology Corporation Apparatuses and methods for forming assemblies
US6228228B1 (en) 1999-02-23 2001-05-08 Sarnoff Corporation Method of making a light-emitting fiber
US6274978B1 (en) 1999-02-23 2001-08-14 Sarnoff Corporation Fiber-based flat panel display
US6259846B1 (en) 1999-02-23 2001-07-10 Sarnoff Corporation Light-emitting fiber, as for a display
EP1041624A1 (en) 1999-04-02 2000-10-04 Interuniversitair Microelektronica Centrum Vzw Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device
US6498114B1 (en) 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
JP2000305480A (ja) * 1999-04-23 2000-11-02 Minolta Co Ltd ヘッドアップディスプレイ装置、ミラー画面内表示装置及びハイマウントストップ表示装置
US6531997B1 (en) 1999-04-30 2003-03-11 E Ink Corporation Methods for addressing electrophoretic displays
US6504524B1 (en) 2000-03-08 2003-01-07 E Ink Corporation Addressing methods for displays having zero time-average field
EP1115268A1 (en) 1999-07-07 2001-07-11 Sony Corporation Method and apparatus for manufacturing flexible organic el display
JP3804349B2 (ja) 1999-08-06 2006-08-02 セイコーエプソン株式会社 薄膜デバイス装置の製造方法、アクティブマトリクス基板の製造方法、および電気光学装置
TW487959B (en) 1999-08-13 2002-05-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
US6391220B1 (en) 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
JP3942770B2 (ja) 1999-09-22 2007-07-11 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
JP2001100661A (ja) * 1999-09-29 2001-04-13 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
JP4009923B2 (ja) 1999-09-30 2007-11-21 セイコーエプソン株式会社 Ｅｌパネル
US6300870B1 (en) * 1999-10-04 2001-10-09 Warren F. Nelson Automotive digital rear window display unit
JP2001118680A (ja) 1999-10-18 2001-04-27 Toyota Motor Corp 有機ｅｌ曲面素子の製造方法
JP3911929B2 (ja) 1999-10-25 2007-05-09 セイコーエプソン株式会社 液晶表示装置の製造方法
US6455397B1 (en) * 1999-11-16 2002-09-24 Rona E. Belford Method of producing strained microelectronic and/or optical integrated and discrete devices
JP3874054B2 (ja) 1999-11-30 2007-01-31 セイコーエプソン株式会社 半導体回路内蔵構造体
JP2001166301A (ja) 1999-12-06 2001-06-22 Seiko Epson Corp バックライト内蔵型液晶表示装置及びその製造方法
JP2001177101A (ja) 1999-12-20 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6566808B1 (en) 1999-12-22 2003-05-20 General Electric Company Luminescent display and method of making
US7576496B2 (en) 1999-12-22 2009-08-18 General Electric Company AC powered OLED device
US20020190661A1 (en) 2000-01-27 2002-12-19 General Electric Company AC powered oled device
US7768210B2 (en) 1999-12-22 2010-08-03 General Electric Company Hybrid electroluminescent devices
JP4478268B2 (ja) 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法
JP4748859B2 (ja) 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US6700322B1 (en) 2000-01-27 2004-03-02 General Electric Company Light source with organic layer and photoluminescent layer
US6515417B1 (en) 2000-01-27 2003-02-04 General Electric Company Organic light emitting device and method for mounting
TWI273722B (en) 2000-01-27 2007-02-11 Gen Electric Organic light emitting device and method for mounting
TW494447B (en) * 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4712198B2 (ja) 2000-02-01 2011-06-29 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4461548B2 (ja) 2000-02-02 2010-05-12 住友化学株式会社 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子
JP4682390B2 (ja) 2000-02-25 2011-05-11 凸版印刷株式会社 高分子ｅｌ素子
EP1257768A4 (en) 2000-02-26 2005-03-16 Federal Mogul Corp SYSTEMS FOR LIGHTING THE INTERIOR OF A VEHICLE BY MEANS OF ELECTROLUMINESCENT PANELS
JP2001318624A (ja) * 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 表示装置およびその作製方法
JP4414553B2 (ja) 2000-03-16 2010-02-10 宇部日東化成株式会社 有機−無機ハイブリッド傾斜材料およびその用途
JP2001265251A (ja) 2000-03-17 2001-09-28 Minolta Co Ltd 表示素子及び積層型表示素子
US6661029B1 (en) 2000-03-31 2003-12-09 General Electric Company Color tunable organic electroluminescent light source
US6777871B2 (en) 2000-03-31 2004-08-17 General Electric Company Organic electroluminescent devices with enhanced light extraction
US6611108B2 (en) 2000-04-26 2003-08-26 Semiconductor Energy Laboratory Co., Ltd. Electronic device and driving method thereof
JP3265301B2 (ja) * 2000-06-05 2002-03-11 株式会社東芝 半導体装置とその製造方法
US6940223B2 (en) 2000-07-10 2005-09-06 Semiconductor Energy Laboratory Co., Ltd. Film forming apparatus and method of manufacturing light emitting device
US6867539B1 (en) 2000-07-12 2005-03-15 3M Innovative Properties Company Encapsulated organic electronic devices and method for making same
US20020060321A1 (en) 2000-07-14 2002-05-23 Kazlas Peter T. Minimally- patterned, thin-film semiconductor devices for display applications
SG136795A1 (en) 2000-09-14 2007-11-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP3974749B2 (ja) 2000-12-15 2007-09-12 シャープ株式会社 機能素子の転写方法
JP2002217391A (ja) 2001-01-23 2002-08-02 Seiko Epson Corp 積層体の製造方法及び半導体装置
US6649433B2 (en) 2001-06-26 2003-11-18 Sigma Technologies International, Inc. Self-healing flexible photonic composites for light sources
US6664730B2 (en) 2001-07-09 2003-12-16 Universal Display Corporation Electrode structure of el device
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
JP2003142666A (ja) 2001-07-24 2003-05-16 Seiko Epson Corp 素子の転写方法、素子の製造方法、集積回路、回路基板、電気光学装置、ｉｃカード、及び電子機器
JP2003109773A (ja) 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5057619B2 (ja) 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
US6699597B2 (en) 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
JP4209606B2 (ja) 2001-08-17 2009-01-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
TWI282126B (en) 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
EP1420975A1 (en) * 2001-08-31 2004-05-26 Johnson Controls Technology Company Conformable vehicle display
US7317205B2 (en) 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
JP2003091245A (ja) 2001-09-18 2003-03-28 Semiconductor Energy Lab Co Ltd 表示装置
US6737753B2 (en) 2001-09-28 2004-05-18 Osram Opto Semiconductor Gmbh Barrier stack
US20050062412A1 (en) 2001-10-25 2005-03-24 Yoshio Taniguchi Light emitting apparatus
JP2003203764A (ja) 2001-10-25 2003-07-18 Harison Toshiba Lighting Corp 発光装置
TW594947B (en) 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6851841B2 (en) 2001-11-28 2005-02-08 Toyoda Gosei Co., Ltd. Illumination device
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
US6835950B2 (en) 2002-04-12 2004-12-28 Universal Display Corporation Organic electronic devices with pressure sensitive adhesive layer
EP1363319B1 (en) 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
TWI272641B (en) 2002-07-16 2007-02-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
KR101079757B1 (ko) 2002-10-30 2011-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법
TWI330269B (en) 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method

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