CN104022062B - 一种柔性显示面板的制备方法 - Google Patents

一种柔性显示面板的制备方法 Download PDF

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CN104022062B
CN104022062B CN201410262342.0A CN201410262342A CN104022062B CN 104022062 B CN104022062 B CN 104022062B CN 201410262342 A CN201410262342 A CN 201410262342A CN 104022062 B CN104022062 B CN 104022062B
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display panels
flexible display
transparency carrier
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bearing substrate
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CN104022062A (zh
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任庆荣
郭炜
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BOE Technology Group Co Ltd
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Priority to EP14882175.4A priority patent/EP3157049B1/en
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Priority to PCT/CN2014/086842 priority patent/WO2015188493A1/zh
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Abstract

本发明实施例公开了一种柔性显示面板的制备方法，涉及显示技术领域，无需在进行激光剥离之前对需剥离的柔性材料层进行精确对位，降低了制备工艺的难度，提高了柔性显示面板的生产效率。该柔性显示面板的制备方法，包括：提供形成有所述柔性显示面板的透明基板；设定激光照射路径，利用激光在承载基板形成标记区域；将所述透明基板固定设置于所述承载基板上，所述柔性显示面板对应所述标记区域放置且位于所述透明基板和所述承载基板之间；根据所述激光照射路径，自所述透明基板一侧照射，将所述柔性显示面板自所述透明基板剥离。

Description

一种柔性显示面板的制备方法
技术领域
本发明涉及显示技术领域，尤其涉及一种柔性显示面板的制备方法。
背景技术
随着技术的发展，柔性显示面板获得了越来越广泛的应用，由于柔性显示面板的柔性基底易发生变形，故在柔性显示面板的制备过程中，柔性基底的定位、搬运、存储等均比较困难，因此，通常要现在透明基板上形成柔性材料层，之后依次在该柔性材料层上形成缓冲层和各种显示结构(以柔性有机发光二极管显示面板为例，包括薄膜晶体管、数据线、栅线、电容、阳极、有机发光层、阴极、像素限定层等结构)，再用紫外激光从透明基板一侧照射柔性材料层，降低柔性材料层与透明基板之间的附着力，使得承载有各种显示结构的柔性材料层从透明基板上剥离(即激光剥离)，形成柔性显示面板。
发明人在实现本发明的过程中发现，在进行激光剥离之前要对需剥离的柔性材料层进行精确对位，这样将提高制备工艺的难度，降低柔性显示面板的制备效率。
发明内容
本发明所要解决的技术问题在于提供一种柔性显示面板的制备方法，无需在进行激光剥离之前对需剥离的柔性材料层进行精确对位，降低了制备工艺的难度，提高了柔性显示面板的生产效率。
为解决上述技术问题，本发明采用如下技术方案：
本发明提供了一种柔性显示面板的制备方法，包括：
提供形成有所述柔性显示面板的透明基板；
设定激光照射路径，利用激光在承载基板形成标记区域；
将所述透明基板固定设置于所述承载基板上，所述柔性显示面板对应所述标记区域放置且位于所述透明基板和所述承载基板之间；
根据所述激光照射路径，激光自所述透明基板一侧照射，将所述柔性显示面板自所述透明基板剥离。
所述设定激光照射路径，利用激光在承载基板形成标记区域包括：
在承载基板上形成非晶硅层，根据所述激光照射路径对所述非晶硅层的部分区域进行激光照射，形成作为标记区域的多晶硅区域。
所述透明基板的大小与所述柔性显示面板的大小相等。
所述柔性显示面板连接有柔性电路板，所述柔性电路板位于所述透明基板之外。
将所述透明基板固定设置于所述承载基板上包括：
将所述柔性电路板固定设置于所述承载基板上，使得所述透明基板固定设置于所述承载基板上。
所述标记区域的尺寸大于所述柔性显示面板的尺寸。
所述柔性显示面板连接所述柔性电路板的边缘突出于所述标记区域放置。
所述柔性显示面板的边缘突出于所述标记区域1毫米设置。
所述柔性显示面板对应所述标记区域放置包括：
每一所述标记区域放置有一块或多块并排的透明基板。
所述标记区域为矩形。
在本发明实施例的技术方案中，提供了一种柔性显示面板的制备方法，该制备方法首先在承载基板上形成标记区域，之后将透明基板上的柔性显示面板对应该标记区域放置，最后再次沿用形成标记区域的激光机的路径，无需再将激光机对柔性显示面板的区域进行精确对位，即可保证激光机可以作用于柔性显示面板的对应区域，将柔性显示面板从透明基板上取下，降低了柔性显示面板的制备工艺的难度，提高了柔性显示面板的制备效率，降低了柔性显示面板的生产成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例中的柔性显示面板的制备方法的流程示意图；
图2为本发明实施例中的柔性显示面板的制备过程的示意图一；
图3为图2的侧视图；
图4为本发明实施例中的柔性显示面板的制备过程的示意图二；
图5为本发明实施例中的柔性显示面板的制备过程的示意图三；
图6为本发明实施例中的柔性显示面板的制备过程的示意图四；
图7为图6的侧视图；
图8为本发明实施例中的柔性显示面板的另一种制备过程的示意图一；
图9为本发明实施例中的柔性显示面板的另一种制备过程的示意图二。
附图标记说明：
1—透明基板； 2—柔性显示面板； 3—承载基板；
4—非晶硅层； 5—多晶硅区域； 6—柔性电路板。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
本发明实施例提供一种柔性显示面板的制备方法，如图1所示，该制备方法包括：
步骤S101、提供形成有所述柔性显示面板的透明基板。
如图2所示，该透明基板1上形成有柔性材料层，该柔性材料层主要由聚酰亚胺、聚对苯二甲酸乙二醇酯等有机材料制成。之后依次在该柔性材料层上形成缓冲层和各种显示结构，以柔性有机发光二极管显示面板为例，包括薄膜晶体管、数据线、栅线、电容、阳极、有机发光层、阴极、像素限定层等结构，即实现了柔性显示面板2的制作.
图3为图2的侧视图，从图3中可看出透明基板1上形成有柔性显示面板2。
步骤S102、设定激光照射路径，利用激光在承载基板形成标记区域。
显然，利用激光形成标记区域的方式众多，例如，步骤S102可包括：
在承载基板上形成非晶硅层，设定激光照射路径，根据所述激光照射路径对所述非晶硅层的部分区域进行激光照射，形成多晶硅区域。
如图4所示，提供一形成有非晶硅层4的承载基板3，激光照射路径如图3中的虚线所示，利用准分子激光作为热源，投射于形成有非晶硅层3的承载基板4上，当非晶硅层4吸收准分子激光的能量后，会形成多晶硅区域5，如图5所示。
在本发明实施例中，透明基板优选玻璃基板，因整个处理过程都是在600℃以下完成，故一般玻璃基板皆可适用。
显然，利用激光照射，可将承载基板3上任意区域的非晶硅层4转换为多晶硅区域5，而通过预先设定激光照射路径，可控制承载基板3上的多晶硅区域5的位置、大小，便于后续的生产、操作。
步骤S103、将所述透明基板固定设置于所述承载基板上，所述柔性显示面板对应所述标记区域放置且位于所述透明基板和所述承载基板之间。
如图6所示，将透明基板1固定设置于所述承载基板3上，具体的，将所述柔性显示面板2对应作为标记区域的多晶硅区域5放置且位于所述透明基板1和所述承载基板3之间，如图7所示。其中，将透明基板1固定设置于所述承载基板3上是为了保证后续的操作中柔性显示面板2与多晶硅区域5的相对位置保持不变，以保证能够顺利地将柔性显示面板2与透明基板1分离。
步骤S104、根据所述激光照射路径，激光自所述透明基板一侧照射，将所述柔性显示面板自所述透明基板剥离。
沿用步骤S102中的激光照射路径，即如图6中虚线所示，即激光将会仅作用于之前所形成的多晶硅区域5的对应位置，而由于柔性显示面板2对应所述多晶硅区域5放置，因此，激光将会作用于柔性显示面板2的对应区域，并且激光自所述透明基板1一侧照射，可以降低形成于柔性显示面板2的柔性材料层与透明基板1之间的附着力，从而将柔性显示面板2自透明基板1取下来，获得所制备的柔性显示面板2。
显然，沿用步骤S102中的激光照射路径，无需再将激光机对柔性显示面板2的区域进行精确对位，即可保证激光机可以作用于柔性显示面板2的对应区域，将柔性显示面板2从透明基板1上取下。
在本实施例的技术方案中，提供了一种柔性显示面板的制备方法，该制备方法首先在承载基板上形成标记区域，之后将透明基板上的柔性显示面板对应该标记区域放置，最后再次沿用形成标记区域的激光机的路径，无需再将激光机对柔性显示面板的区域进行精确对位，即可保证激光机可以作用于柔性显示面板的对应区域，将柔性显示面板从透明基板上取下，降低了柔性显示面板的制备工艺的难度，提高了柔性显示面板的制备效率，降低了柔性显示面板的生产成本。
其中，具体的，通常是在一块较大的透明基板上通过涂覆等制作工艺均匀形成柔性材料层，之后在该柔性材料层的不同区域分别形成缓冲层和各种显示结构，并且该柔性材料层的不同区域相互独立、并不相接触，即该较大的透明基板上形成有多块柔性显示面板，并且各柔性显示面板之间相互独立、并不相接触。显然，各柔性显示面板之间仍然形成有柔性材料层。为了保证在进行激光照射工艺时，各柔性显示面板之间的柔性材料层不会因为激光的作用剥离，导致柔性显示面板2的衬底过大等不良情况的发生，并且为了便于后续的玻璃工艺的进行，对该较大的透明基板进行切割，具体的，该较大的透明基板切割为多块透明基板12，任一透明基板1的大小与其所承载的柔性显示面板2的大小相等。
为了向所述柔性显示面板2提供电信号、图像信号等信号，该柔性显示面板2应连接有柔性电路板6，如图2所示，由于激光会对柔性电路板的电学性能造成影响，且透明基板1的大小与其所承载的柔性显示面板2的大小相等，而在本发明实施例中，柔性显示面板2对应作为标记区域的所述多晶硅区域5放置，由于激光仅作用于多晶硅区域5，为了防止柔性电路板6受到激光照射，优选的，该柔性电路板6位于所述透明基板1之外。
在步骤S103中提到，需要将所述透明基板1固定设置于所述承载基板3上，以防止在激光照射的过程中透明基板1和承载基板3的相对位置发生改变影响柔性显示面板2的剥离，而透明基板1与柔性显示面板2的大小相等，优选的，可通过将所述柔性电路板2固定设置于所述承载基板3上，使得所述透明基板1固定设置于所述承载基板3上。具体的，可利用高温胶带、双面胶等粘结方法将柔性电路板6固定设置于所述承载基板3上。
另外，若是激光机从柔性显示面板2的边缘开始照射，由于激光机的加热过程，很容易导致柔性显示面板2的边缘的柔性材料层的碳化，出现小颗粒，影响柔性显示面板2性能。在本发明实施例中，由于激光机对应标记区域进行照射，优选的，作为标记区域的所述多晶硅区域5的尺寸大于所述柔性显示面板2的尺寸，防止柔性显示面板2的边缘碳化，同时还使得柔性显示面板2更容易对应多晶硅区域5设置，降低了将柔性显示面板2对应多晶硅区域5设置时的对位难度。
但是由于柔性显示面板2连接的柔性电路板6受到激光照射会出现性能下降等不良情况，因此，优选的，如图5所示，所述柔性显示面板2连接所述柔性电路板6的边缘突出于所述作为标记区域的多晶硅区域5放置，即可起到防止柔性电路板6受到激光的照射的目的，进一步的，如所述柔性显示面板2的边缘可突出于所述多晶硅区域51毫米设置，虽然说还有1毫米左右的宽度的柔性显示面板2未收到激光的照射，但是对将该柔性显示面板2自透明基板1上剥离开来没有影响。
进一步的，步骤S103中的所述柔性显示面板2对应所述标记区域放置可为：每一所述作为标记区域的多晶硅区域5放置有一块或多块并排的透明基板1，显然，上述的具体实施例即为在每一透明基板1上形成有一柔性显示面板2，而在同一作为标记区域的多晶硅区域5放置多块并排的柔性显示面板2可有效提高柔性显示面板2的生产效率。
具体的，如图8所示，该作为标记区域的多晶硅区域5为矩形结构，三个形成有柔性显示面板2的透明基板1并排放置在该多晶硅区域5上，三个柔性显示面板2的柔性电路板6均位于透明基板1之外，垂直于柔性显示面板2设置，并且固定于承载基板3上，任一柔性显示面板2连接柔性电路板6的一边缘突出于多晶硅区域5设置。显然，图8中多晶硅区域5的边缘远离任一柔性显示面板2的边缘。激光机延续形成该多晶硅区域5的路径再次发出激光作用于多晶硅区域5时，具体的，如图9所示，激光机的路径为图9中的虚线所示，平行于该多晶硅区域5的长边，此时该多晶硅区域5上放置的三个透明基板1上的柔性显示面板2能够受到激光的照射，同时从三块透明基板1上剥离出来，如此可大幅度提高柔性显示面板的生产效率。
需要说明的是，图5和图8等图中的柔性电路板6垂直于所述柔性显示面板2放置仅为一种柔性显示面板2和柔性电路板6的具体连接方式，另外还有例如柔性电路板6沿着柔性显示面板2的边缘设置等情况，本发明实施例对此不进行限制。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (9)

1.一种柔性显示面板的制备方法，其特征在于，包括：
提供形成有所述柔性显示面板的透明基板；
设定激光照射路径，在承载基板上形成非晶硅层，根据所述激光照射路径对所述非晶硅层的部分区域进行激光照射，形成作为标记区域的多晶硅区域；
将所述透明基板固定设置于所述承载基板上，所述柔性显示面板对应所述标记区域放置且位于所述透明基板和所述承载基板之间；
根据所述激光照射路径，激光自所述透明基板一侧照射，将所述柔性显示面板自所述透明基板剥离。
2.根据权利要求1所述的制备方法，其特征在于，所述透明基板的大小与所述柔性显示面板的大小相等。
3.根据权利要求2所述的制备方法，其特征在于，
所述柔性显示面板连接有柔性电路板，所述柔性电路板位于所述透明基板之外。
4.根据权利要求3所述的制备方法，其特征在于，将所述透明基板固定设置于所述承载基板上包括：
将所述柔性电路板固定设置于所述承载基板上，使得所述透明基板固定设置于所述承载基板上。
5.根据权利要求1所述的制备方法，其特征在于，所述标记区域的尺寸大于所述柔性显示面板的尺寸。
6.根据权利要求5所述的制备方法，其特征在于，
所述柔性显示面板连接所述柔性电路板的边缘突出于所述标记区域放置。
7.根据权利要求6所述的制备方法，其特征在于，
所述柔性显示面板的边缘突出于所述标记区域1毫米设置。
8.根据权利要求1所述的制备方法，其特征在于，所述柔性显示面板对应所述标记区域放置包括：
每一所述标记区域放置有一块或多块并排的透明基板。
9.根据权利要求8所述的制备方法，其特征在于，
所述标记区域为矩形。
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CN106585069A (zh) * 2016-12-23 2017-04-26 武汉华星光电技术有限公司 柔性基板、面板及丝网印刷机制作柔性基板、面板的方法
DE102017116904A1 (de) * 2017-07-26 2019-01-31 Osram Oled Gmbh Verfahren zum Herstellen eines flexiblen, organischen, lichtemittierenden Bauelements und flexibles, organisches, lichtemittierendes Bauelement
CN111584536B (zh) * 2020-05-25 2024-04-02 京东方科技集团股份有限公司 一种透明基板、柔性显示基板及其制作方法和显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1925127A (zh) * 2005-08-31 2007-03-07 三星Sdi株式会社 用于制造柔性显示器的膜盘
CN103185977A (zh) * 2011-12-30 2013-07-03 财团法人工业技术研究院 可挠式显示器的制造方法
CN103413775A (zh) * 2013-07-19 2013-11-27 京东方科技集团股份有限公司 一种柔性显示器件的制备方法及装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP4082400B2 (ja) * 2004-02-19 2008-04-30 セイコーエプソン株式会社 電気光学装置の製造方法、電気光学装置および電子機器
CN101574759B (zh) 2008-05-05 2012-07-04 元太科技工业股份有限公司 承载装置及软性显示面板的制造方法
JP5257314B2 (ja) * 2009-09-29 2013-08-07 大日本印刷株式会社 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法
KR101147988B1 (ko) 2010-07-13 2012-05-24 포항공과대학교 산학협력단 물리적 박리 방법을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판
KR20130037275A (ko) * 2011-10-06 2013-04-16 주식회사 엔씰텍 플렉서블 소자를 구비하는 전자 장치의 제조 방법
KR101857291B1 (ko) 2011-10-26 2018-06-20 엘지디스플레이 주식회사 플렉서블 표시패널 제조방법 및 플렉서블 표시패널 제조용 고정지지대
CN102722301B (zh) * 2012-05-23 2016-01-20 浙江星星瑞金科技股份有限公司 一种电容触摸屏的制作方法
CN102769109B (zh) * 2012-07-05 2015-05-13 青岛海信电器股份有限公司 柔性显示器的制作方法以及制作柔性显示器的基板
KR20140029987A (ko) * 2012-08-31 2014-03-11 삼성디스플레이 주식회사 캐리어 기판, 이의 제조방법 및 이를 이용한 플렉서블 디스플레이 장치의 제조방법
CN103700662B (zh) * 2013-12-09 2017-02-15 京东方科技集团股份有限公司 一种承载基板和柔性显示器件制作方法
CN103855171B (zh) 2014-02-28 2017-01-18 京东方科技集团股份有限公司 一种柔性显示基板母板及柔性显示基板的制造方法
CN104022062B (zh) 2014-06-12 2016-08-17 京东方科技集团股份有限公司 一种柔性显示面板的制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1925127A (zh) * 2005-08-31 2007-03-07 三星Sdi株式会社 用于制造柔性显示器的膜盘
CN103185977A (zh) * 2011-12-30 2013-07-03 财团法人工业技术研究院 可挠式显示器的制造方法
CN103413775A (zh) * 2013-07-19 2013-11-27 京东方科技集团股份有限公司 一种柔性显示器件的制备方法及装置

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