CN100585870C - 有机电致发光显示器件 - Google Patents
有机电致发光显示器件 Download PDFInfo
- Publication number
- CN100585870C CN100585870C CN200710199809A CN200710199809A CN100585870C CN 100585870 C CN100585870 C CN 100585870C CN 200710199809 A CN200710199809 A CN 200710199809A CN 200710199809 A CN200710199809 A CN 200710199809A CN 100585870 C CN100585870 C CN 100585870C
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- 239000000758 substrate Substances 0.000 claims abstract description 100
- 239000011241 protective layer Substances 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims description 65
- 238000005401 electroluminescence Methods 0.000 claims description 33
- 239000012044 organic layer Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 16
- 229920003002 synthetic resin Polymers 0.000 claims description 13
- 239000000057 synthetic resin Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 230000008595 infiltration Effects 0.000 claims description 8
- 238000001764 infiltration Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 32
- 239000010408 film Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
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- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 230000007261 regionalization Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0080054A KR100484109B1 (ko) | 2002-12-14 | 2002-12-14 | 기판 제조방법, 이 기판제조방법을 이용한 유기 전계발광표시장치의 제조방법 및 유기 전계 발광 표시장치 |
KR80054/2002 | 2002-12-14 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101202820A Division CN100431164C (zh) | 2002-12-14 | 2003-12-12 | 制作基底的方法和制作有机电致发光显示器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101197391A CN101197391A (zh) | 2008-06-11 |
CN100585870C true CN100585870C (zh) | 2010-01-27 |
Family
ID=36695820
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710199809A Expired - Lifetime CN100585870C (zh) | 2002-12-14 | 2003-12-12 | 有机电致发光显示器件 |
CNB2003101202820A Expired - Lifetime CN100431164C (zh) | 2002-12-14 | 2003-12-12 | 制作基底的方法和制作有机电致发光显示器件的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101202820A Expired - Lifetime CN100431164C (zh) | 2002-12-14 | 2003-12-12 | 制作基底的方法和制作有机电致发光显示器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7049161B2 (zh) |
KR (1) | KR100484109B1 (zh) |
CN (2) | CN100585870C (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004088728A2 (en) * | 2003-04-02 | 2004-10-14 | Koninklijke Philips Electronics N.V. | Method of manufacturing a flexible electronic device and flexible device |
KR100647631B1 (ko) * | 2004-11-05 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 기판의 제조방법 및 상기방법을 이용한 평판 디스플레이 장치의 제조방법 |
FR2893750B1 (fr) * | 2005-11-22 | 2008-03-14 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif electronique flexible du type ecran comportant une pluralite de composants en couches minces. |
KR100805589B1 (ko) * | 2006-07-04 | 2008-02-20 | 삼성에스디아이 주식회사 | 평판 표시 장치의 제조 방법 |
KR100759691B1 (ko) * | 2006-07-04 | 2007-09-17 | 삼성에스디아이 주식회사 | 평판 표시 장치의 제조 방법 |
US8017220B2 (en) | 2006-10-04 | 2011-09-13 | Corning Incorporated | Electronic device and method of making |
JP4866200B2 (ja) * | 2006-10-05 | 2012-02-01 | パナソニック株式会社 | 発光デバイスの製造方法 |
US7839086B2 (en) * | 2006-10-12 | 2010-11-23 | Lg Electronics Inc. | Display device and method for manufacturing the same |
KR20080043507A (ko) * | 2006-11-14 | 2008-05-19 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조 방법 |
KR101446226B1 (ko) * | 2006-11-27 | 2014-10-01 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조 방법 |
KR101359916B1 (ko) * | 2007-05-08 | 2014-02-10 | 삼성디스플레이 주식회사 | 가요성 표시 장치의 제조 방법 |
TWI343636B (en) * | 2007-01-29 | 2011-06-11 | Au Optronics Corp | Substrate module and manufacturing method of flexible active matrix devices |
CN101256980B (zh) * | 2007-02-28 | 2011-10-26 | 奇美电子股份有限公司 | 有机电致发光显示装置及其制作方法 |
US7656493B2 (en) * | 2007-07-31 | 2010-02-02 | Arthur Alan R | Pixel well electrodes |
KR101308200B1 (ko) * | 2008-05-06 | 2013-09-13 | 엘지디스플레이 주식회사 | 플렉서블 유기발광 표시장치 및 그 제조 방법 |
KR101481826B1 (ko) * | 2008-05-20 | 2015-01-12 | 엘지디스플레이 주식회사 | 플렉서블 유기발광 표시장치 및 그 제조 방법 |
KR101157659B1 (ko) * | 2009-05-13 | 2012-06-18 | (주)포인트엔지니어링 | 다공성 기판을 이용한 유기발광소자의 제조 방법 |
KR101193197B1 (ko) * | 2010-07-07 | 2012-10-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR20120077470A (ko) * | 2010-12-30 | 2012-07-10 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101897743B1 (ko) | 2011-06-01 | 2018-09-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
US9184211B2 (en) * | 2012-07-05 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for fabricating the same |
CN104396344A (zh) * | 2012-10-29 | 2015-03-04 | 日东电工株式会社 | 使用了卷对卷方式的有机电致发光面板的制造方法 |
CN105226201A (zh) * | 2015-09-02 | 2016-01-06 | 上海和辉光电有限公司 | 一种柔性oled显示器及其制造方法 |
CN107579088B (zh) * | 2016-07-11 | 2021-02-26 | 京东方科技集团股份有限公司 | 一种柔性oled显示面板及其制备方法 |
KR20180033375A (ko) * | 2016-09-23 | 2018-04-03 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN106783883B (zh) * | 2016-12-27 | 2023-11-10 | 京东方科技集团股份有限公司 | 显示基板及其制备方法 |
CN107706194A (zh) * | 2017-09-21 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板和显示装置 |
KR102355103B1 (ko) * | 2017-09-29 | 2022-01-24 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
CN107946482A (zh) * | 2017-11-09 | 2018-04-20 | 信利半导体有限公司 | 一种柔性显示器的制作方法 |
JP6929265B2 (ja) * | 2018-12-13 | 2021-09-01 | キヤノン株式会社 | 有機発光装置とその製造方法、照明装置、移動体、撮像装置、電子機器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3381443B2 (ja) * | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
US6107213A (en) * | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
US6326280B1 (en) * | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
JP3364081B2 (ja) * | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2755216B2 (ja) | 1995-06-20 | 1998-05-20 | 日本電気株式会社 | 有機薄膜el素子の製造方法 |
JP2000123971A (ja) | 1998-10-15 | 2000-04-28 | Futaba Corp | 有機elの製造方法 |
TW468269B (en) * | 1999-01-28 | 2001-12-11 | Semiconductor Energy Lab | Serial-to-parallel conversion circuit, and semiconductor display device employing the same |
TW494447B (en) * | 2000-02-01 | 2002-07-11 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP2001249626A (ja) * | 2000-03-03 | 2001-09-14 | Sharp Corp | 表示装置および表示装置の製造方法 |
-
2002
- 2002-12-14 KR KR10-2002-0080054A patent/KR100484109B1/ko active IP Right Grant
-
2003
- 2003-12-04 US US10/726,667 patent/US7049161B2/en not_active Expired - Lifetime
- 2003-12-12 CN CN200710199809A patent/CN100585870C/zh not_active Expired - Lifetime
- 2003-12-12 CN CNB2003101202820A patent/CN100431164C/zh not_active Expired - Lifetime
-
2006
- 2006-03-28 US US11/390,441 patent/US7307281B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN101197391A (zh) | 2008-06-11 |
US7307281B2 (en) | 2007-12-11 |
US20040115852A1 (en) | 2004-06-17 |
US7049161B2 (en) | 2006-05-23 |
US20060163565A1 (en) | 2006-07-27 |
KR20040053495A (ko) | 2004-06-24 |
CN1509125A (zh) | 2004-06-30 |
CN100431164C (zh) | 2008-11-05 |
KR100484109B1 (ko) | 2005-04-18 |
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