JP4754387B2 - El装置 - Google Patents
El装置 Download PDFInfo
- Publication number
- JP4754387B2 JP4754387B2 JP2006097195A JP2006097195A JP4754387B2 JP 4754387 B2 JP4754387 B2 JP 4754387B2 JP 2006097195 A JP2006097195 A JP 2006097195A JP 2006097195 A JP2006097195 A JP 2006097195A JP 4754387 B2 JP4754387 B2 JP 4754387B2
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- JP
- Japan
- Prior art keywords
- film
- sealing
- circuit
- layer
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000007789 sealing Methods 0.000 claims description 114
- 230000001681 protective effect Effects 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 44
- 239000003795 chemical substances by application Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012044 organic layer Substances 0.000 claims description 11
- 239000000565 sealant Substances 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
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- Electroluminescent Light Sources (AREA)
Description
・上記の実施形態においては、第1電極層11をアノード電極として第2電極層13をカソード電極として利用するのは必須でなく、これらを入れ替えても良い。
3 回路保護膜
4 封止膜
4a 封止絶縁膜
5 密封部
10 有機EL素子部
11 第1電極層
12 有機層
13 第2電極層
20 素子基板
21 回路層
51 封止基板
52 シール剤
Ea 非被覆領域(露出領域)
Sa、Sb 段差
Claims (3)
- 回路部が基板上に形成されたEL装置であって、
前記回路部上に形成された回路保護膜と、
前記回路保護膜上に形成され、前記回路保護膜の端部上面を露出する平坦化膜と、
前記平坦化膜上に形成され、発光層が含まれた有機層を有する有機EL素子部と、
前記有機EL素子部上から前記平坦化膜の側面にかけて連続して形成され、前記回路保護膜の前記端部上面の一部と接着するように形成された封止膜と、
前記封止膜で被覆されていない前記回路保護膜の前記端部上面に形成されるシール剤を介して接着された封止部材と、
を備え、
前記回路保護膜は、前記封止膜よりも密度が高いことを特徴とするEL装置。 - 請求項1に記載のEL装置において、
前記回路保護膜は、前記シール剤の直下領域における膜厚が前記封止膜の直下領域における膜厚よりも小さいことを特徴とするEL装置。 - 請求項2に記載のEL装置において、
前記シール剤の直下領域における前記回路保護膜の膜厚と前記封止膜の直下領域における前記回路保護膜の膜厚との差が1nm以上であることを特徴とするEL装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006097195A JP4754387B2 (ja) | 2006-03-31 | 2006-03-31 | El装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006097195A JP4754387B2 (ja) | 2006-03-31 | 2006-03-31 | El装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007273246A JP2007273246A (ja) | 2007-10-18 |
JP4754387B2 true JP4754387B2 (ja) | 2011-08-24 |
Family
ID=38675840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006097195A Active JP4754387B2 (ja) | 2006-03-31 | 2006-03-31 | El装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4754387B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009301816A (ja) * | 2008-06-12 | 2009-12-24 | Sony Corp | 表示装置および表示装置の製造方法 |
JP6232277B2 (ja) * | 2013-12-18 | 2017-11-15 | 東京エレクトロン株式会社 | 有機el素子構造、その製造方法及び発光パネル |
KR102486876B1 (ko) | 2015-07-07 | 2023-01-11 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 및 그 제조방법 |
WO2018179175A1 (ja) * | 2017-03-29 | 2018-10-04 | シャープ株式会社 | 表示デバイス、表示デバイスの製造方法、表示デバイスの製造装置、成膜装置、コントローラ |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4704006B2 (ja) * | 2003-10-24 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法、並びに電子機器 |
-
2006
- 2006-03-31 JP JP2006097195A patent/JP4754387B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2007273246A (ja) | 2007-10-18 |
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