JP4629674B2 - 金属ゲートの製造方法 - Google Patents

金属ゲートの製造方法 Download PDF

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Publication number
JP4629674B2
JP4629674B2 JP2006525358A JP2006525358A JP4629674B2 JP 4629674 B2 JP4629674 B2 JP 4629674B2 JP 2006525358 A JP2006525358 A JP 2006525358A JP 2006525358 A JP2006525358 A JP 2006525358A JP 4629674 B2 JP4629674 B2 JP 4629674B2
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Japan
Prior art keywords
layer
gate
metal
tungsten
forming
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Expired - Fee Related
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JP2006525358A
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English (en)
Japanese (ja)
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JP2007505482A5 (enExample
JP2007505482A (ja
Inventor
スティーゲン、アン、エル
ウォン、クウォン、ホン
リー、イン
ナラヤナン、ビジャイ
カブラル、シリル、ジュニア
ジェイミソン、ポール
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International Business Machines Corp
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International Business Machines Corp
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Publication of JP2007505482A5 publication Critical patent/JP2007505482A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Contacts (AREA)
  • Vehicle Body Suspensions (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006525358A 2003-09-09 2004-08-20 金属ゲートの製造方法 Expired - Fee Related JP4629674B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/605,106 US6921711B2 (en) 2003-09-09 2003-09-09 Method for forming metal replacement gate of high performance
PCT/US2004/027327 WO2005024906A2 (en) 2003-09-09 2004-08-20 Structure and method for metal replacement gate of high performance device

Publications (3)

Publication Number Publication Date
JP2007505482A JP2007505482A (ja) 2007-03-08
JP2007505482A5 JP2007505482A5 (enExample) 2007-09-20
JP4629674B2 true JP4629674B2 (ja) 2011-02-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006525358A Expired - Fee Related JP4629674B2 (ja) 2003-09-09 2004-08-20 金属ゲートの製造方法

Country Status (8)

Country Link
US (1) US6921711B2 (enExample)
EP (1) EP1668706B1 (enExample)
JP (1) JP4629674B2 (enExample)
KR (1) KR100791433B1 (enExample)
CN (1) CN1846313B (enExample)
AT (1) ATE438928T1 (enExample)
DE (1) DE602004022435D1 (enExample)
WO (1) WO2005024906A2 (enExample)

Families Citing this family (415)

* Cited by examiner, † Cited by third party
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