CN1846313B - 集成电路的晶体管中的金属栅极结构及其制造方法 - Google Patents

集成电路的晶体管中的金属栅极结构及其制造方法 Download PDF

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Publication number
CN1846313B
CN1846313B CN2004800256506A CN200480025650A CN1846313B CN 1846313 B CN1846313 B CN 1846313B CN 2004800256506 A CN2004800256506 A CN 2004800256506A CN 200480025650 A CN200480025650 A CN 200480025650A CN 1846313 B CN1846313 B CN 1846313B
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layer
gate
metal
tungsten
forming
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CN1846313A (zh
Inventor
A·L·斯特根
V·库
K·H·翁
李瑛�
V·纳拉亚南
C·小卡布拉尔
P·贾米森
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Contacts (AREA)
  • Vehicle Body Suspensions (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2004800256506A 2003-09-09 2004-08-20 集成电路的晶体管中的金属栅极结构及其制造方法 Expired - Fee Related CN1846313B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/605,106 2003-09-09
US10/605,106 US6921711B2 (en) 2003-09-09 2003-09-09 Method for forming metal replacement gate of high performance
PCT/US2004/027327 WO2005024906A2 (en) 2003-09-09 2004-08-20 Structure and method for metal replacement gate of high performance device

Publications (2)

Publication Number Publication Date
CN1846313A CN1846313A (zh) 2006-10-11
CN1846313B true CN1846313B (zh) 2011-04-06

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Country Link
US (1) US6921711B2 (enExample)
EP (1) EP1668706B1 (enExample)
JP (1) JP4629674B2 (enExample)
KR (1) KR100791433B1 (enExample)
CN (1) CN1846313B (enExample)
AT (1) ATE438928T1 (enExample)
DE (1) DE602004022435D1 (enExample)
WO (1) WO2005024906A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014082337A1 (zh) * 2012-11-30 2014-06-05 中国科学院微电子研究所 半导体器件及其制造方法

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