JP2007505482A - 集積回路のトランジスタにおける金属ゲート構造および形成方法(高性能デバイスの金属置換ゲートのための構造および方法) - Google Patents
集積回路のトランジスタにおける金属ゲート構造および形成方法(高性能デバイスの金属置換ゲートのための構造および方法) Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 123
- 239000002184 metal Substances 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 71
- 230000015572 biosynthetic process Effects 0.000 title description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 54
- 239000010937 tungsten Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims abstract description 40
- 125000006850 spacer group Chemical group 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- 229920005591 polysilicon Polymers 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 150000002736 metal compounds Chemical class 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 238000005121 nitriding Methods 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 1
- 229910052914 metal silicate Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 149
- 230000008021 deposition Effects 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- -1 silicon nitride Chemical class 0.000 description 3
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical compound [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Abstract
【解決手段】 まず、半導体基板(240)上に設けたエッチ・ストップ層(250)上に、犠牲ゲート構造(260)を形成する。犠牲ゲート構造(300)の側壁上に、1対のスペーサ(400)を設ける。次いで、犠牲ゲート構造(300)を除去して、開口(600)を形成する。続けて、スペーサ(400)間の開口(600)内に、タングステン等の金属の第1の層(700)、窒化チタン等の拡散バリア層(800)、およびタングステン等の金属の第2の層(900)を含む金属ゲート(1000)を形成する。
【選択図】 図12
Description
Claims (32)
- 集積回路のトランジスタにおける金属ゲート構造(1000)であって、
実質的に金属および金属化合物の少なくとも一方から成る第1の層(700)であって、基板(240)の半導体領域に形成されたトランジスタ・チャネル領域に接触しているゲート誘電体(750)に接触している、第1の層(700)と、
前記第1の層(700)の上にある拡散バリア層(800)と、
実質的に金属および金属化合物の少なくとも一方から成り、前記拡散バリア層(800)の上にある第2の層(900)と、を含み、前記第1の層および第2の層(700、900)ならびに前記拡散バリア層(800)が、1対の誘電体スペーサ(400)間の開口(600)内に配置されている、金属ゲート構造。 - 前記第1の層(700)が、実質的に、イリジウム(Ir)、ニオブ(Nb)、白金(Pt)、レニウム(Re)、ロジウム(Rh)、ルテニウム(Ru)、タンタル(Ta)、窒化タンタル(TaN)、タンタル・シリコン窒化物(TaSiN)、タングステン(W)、およびバナジウム(V)から成る群から選択された少なくとも1つの材料から成る、請求項1に記載の金属ゲート構造。
- 前記第2の層(900)が、実質的に、イリジウム(Ir)、ニオブ(Nb)、白金(Pt)、レニウム(Re)、ロジウム(Rh)、ルテニウム(Ru)、タンタル(Ta)、窒化タンタル(TaN)、タンタル・シリコン窒化物(TaSiN)、タングステン(W)、バナジウム(V)、Niシリサイド、Coシリサイド、およびTiシリサイドから成る群から選択された少なくとも1つの材料から成る、請求項2に記載の金属ゲート構造。
- 前記第1および第2の層(700、900)が実質的にタングステンから成る、請求項1に記載の金属ゲート構造。
- 前記第1の層(700)および前記第2の層(900)の少なくとも一方が、前記金属ゲート構造を所望の仕事関数に調整するための不純物濃度を含む、請求項1に記載の金属ゲート構造。
- 前記第1の層(700)が前記第2の層(900)よりも薄い、請求項1に記載の金属ゲート構造。
- 前記第1の層(700)が約2nmから約20nmの間の厚さを有する、請求項6に記載の金属ゲート構造。
- 前記拡散バリア層(800)が、チタンの窒化物、ハフニウムの窒化物、およびジルコニウムの窒化物の少なくとも1つを含む、請求項1に記載の金属ゲート構造。
- 前記拡散バリア層(800)が実質的に窒化チタンから成る、請求項8に記載の金属ゲート構造。
- 前記ゲート誘電体(750)が実質的に酸化物から成る、請求項1に記載の金属ゲート構造。
- 前記酸化物から成るゲート誘電体(750)が前記半導体領域の半導体材料の酸化物である、請求項10に記載の金属ゲート構造。
- 前記半導体領域がシリコンを含む単結晶領域であり、前記酸化物から成るゲート誘電体が実質的に二酸化シリコンから成る、請求項11に記載の金属ゲート構造。
- 前記基板(240)が、バルク半導体基板、セミコンダクタ・オン・インシュレータ基板、シリコン・オン・インシュレータ基板、シリコン−ゲルマニウム基板、およびゲルマニウム基板から成る群から選択される、請求項1に記載の金属ゲート構造。
- 前記半導体領域が、多結晶シリコンおよびアモルファス・シリコンから成る群から選択された少なくとも1つを含む、請求項1に記載の金属ゲート構造。
- 前記誘電体スペーサ(400)が、酸化シリコン、酸窒化シリコン、窒化シリコン、金属酸化物、シリケート、およびこれらの混合物から成る群から選択された少なくとも1つの材料を含む、請求項1に記載の金属ゲート構造。
- 請求項1に記載の金属ゲートを形成する方法であって、
基板(240)の半導体領域上にエッチ・ストップ層(250)を形成するステップと、
前記エッチ・ストップ層(250)上に犠牲ゲート(260)を形成し、これによって犠牲ゲート構造(300)を形成するステップと、
前記犠牲ゲート構造(300)の側壁上に1対の誘電体スペーサ(400)を設けるステップと、
前記基板(240)上に、前記犠牲ゲート(260)の上部に対してほぼ平面的な上面を有する誘電体層(500)を形成するステップと、
前記犠牲ゲート(260)を除去して前記スペーサ(400)間に開口(600)を形成するステップと、
前記開口(600)の下部から前記エッチ・ストップ層(250)を除去するステップと、
前記開口(600)内で前記半導体領域上にゲート誘電体(750)を形成するステップと、
前記開口(600)内に、前記ゲート誘電体(750)および前記スペーサ(400)の側壁に接触させて、金属および金属化合物の少なくとも一方から成る第1の層(700)を堆積するステップと、
前記開口(600)内で前記第1の層(700)上に拡散バリア層(800)を形成するステップと、
前記開口(600)内で前記拡散バリア層(80)上に金属および金属化合物の少なくとも一方から成る第2の層(900)を堆積するステップと、
を含む、方法。 - 前記ゲート誘電体(750)が熱成長によって形成される、請求項16に記載の方法。
- 前記第1の層(700)がカルボニルを含有する前駆物質から堆積され、前記第2の層(900)がフッ素を含有する前駆物質から堆積される、請求項16に記載の方法。
- 前記第1の層(700)がW(CO)6前駆物質から堆積され、前記第2の層(900)がWF6前駆物質から堆積される、請求項18に記載の方法。
- 前記犠牲ゲート(260)がポリシリコンを含む、請求項16に記載の方法。
- 前記拡散バリア層(800)を形成する前に、接着材料層を堆積するステップを更に含む、請求項16に記載の方法。
- 前記拡散バリア層(800)が実質的に窒化チタン(TiN)から成り、前記接着材料層が実質的にチタン(Ti)から成る、請求項21に記載の方法。
- 前記犠牲ゲート(260)および前記エッチ・ストップ層(250)がエッチングによって除去される、請求項16に記載の方法。
- 前記エッチ・ストップ層(250)が実質的に酸化物層から成る、請求項16に記載の方法。
- 前記第1の層(700)が化学的気相堆積(CVD)プロセスを用いて堆積される、請求項16に記載の方法。
- 前記第1の層(700)が原子層堆積(ALD)プロセスを用いて堆積される、請求項16に記載の方法。
- 前記第1の層(700)が物理的気相堆積(PVD)プロセスを用いて堆積される、請求項16に記載の方法。
- 前記第2の層(900)を形成する前に、前記拡散バリア層(800)をアニーリングするステップを更に含む、請求項16に記載の方法。
- 前記拡散バリア層(800)が400℃から600℃の間の範囲の温度でアニーリングされる、請求項28に記載の方法。
- 前記第2の層(900)が化学的気相堆積(CVD)プロセスを用いて堆積される、請求項16に記載の方法。
- 前記金属ゲート(1000)を前記誘電体層(500)のレベルまで平坦化するステップを更に含む、請求項16に記載の方法。
- 前記平坦化するステップが化学機械的研磨によって行われる、請求項31に記載の方法。
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PCT/US2004/027327 WO2005024906A2 (en) | 2003-09-09 | 2004-08-20 | Structure and method for metal replacement gate of high performance device |
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KR101447315B1 (ko) * | 2011-09-01 | 2014-10-06 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 복수의 배리어 층을 구비한 금속 게이트 디바이스를 제공하는 기술 |
JP2014049747A (ja) * | 2012-08-31 | 2014-03-17 | Sk Hynix Inc | タングステンゲート電極を備えた半導体装置及びその製造方法 |
KR20140141258A (ko) * | 2013-05-31 | 2014-12-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US10497788B2 (en) | 2013-05-31 | 2019-12-03 | Samsung Electronics Co., Ltd. | Semiconductor devices and fabricating methods thereof |
KR102078187B1 (ko) * | 2013-05-31 | 2020-02-17 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
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WO2005024906A3 (en) | 2005-11-03 |
DE602004022435D1 (de) | 2009-09-17 |
KR100791433B1 (ko) | 2008-01-07 |
US20050051854A1 (en) | 2005-03-10 |
EP1668706A4 (en) | 2008-11-05 |
JP4629674B2 (ja) | 2011-02-09 |
KR20060098361A (ko) | 2006-09-18 |
EP1668706B1 (en) | 2009-08-05 |
ATE438928T1 (de) | 2009-08-15 |
CN1846313B (zh) | 2011-04-06 |
EP1668706A2 (en) | 2006-06-14 |
US6921711B2 (en) | 2005-07-26 |
CN1846313A (zh) | 2006-10-11 |
WO2005024906A2 (en) | 2005-03-17 |
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