JP2013501384A - 非炭素流動性cvdプロセスを使用する酸化ケイ素の形成 - Google Patents
非炭素流動性cvdプロセスを使用する酸化ケイ素の形成 Download PDFInfo
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- JP2013501384A JP2013501384A JP2012523973A JP2012523973A JP2013501384A JP 2013501384 A JP2013501384 A JP 2013501384A JP 2012523973 A JP2012523973 A JP 2012523973A JP 2012523973 A JP2012523973 A JP 2012523973A JP 2013501384 A JP2013501384 A JP 2013501384A
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- nitrogen
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- 238000000034 method Methods 0.000 title claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 46
- 229910052799 carbon Inorganic materials 0.000 title claims description 27
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000000151 deposition Methods 0.000 claims abstract description 31
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 114
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 55
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
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- 229910052734 helium Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
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- 230000005284 excitation Effects 0.000 description 2
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- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- -1 H 2 N (SiH 3 ) Chemical class 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- DZPJVKXUWVWEAD-UHFFFAOYSA-N [C].[N].[Si] Chemical compound [C].[N].[Si] DZPJVKXUWVWEAD-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- RTKIYFITIVXBLE-QEQCGCAPSA-N trichostatin A Chemical compound ONC(=O)/C=C/C(/C)=C/[C@@H](C)C(=O)C1=CC=C(N(C)C)C=C1 RTKIYFITIVXBLE-QEQCGCAPSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Abstract
Description
本願は、2010年7月21日出願の「FORMATION OF SILICON OXIDE USING NON−CARBON FLOWABLE CVD PROCESSES」という名称の米国特許出願第12/840,768号、および2009年8月6日出願の「FORMATION OF SILICON OXIDE USING NON−CARBON FLOWABLE CVD PROCESSES」という名称の米国仮特許出願第61/231,729号の利益を主張する。両願を、あらゆる目的で参照により本明細書に組み込む。
図1は、本発明の実施形態によって酸化ケイ素膜を作製する方法100における選択されたステップを示す流れ図である。方法100は、炭素を含まないケイ素前駆体を反応チャンバへ提供するステップ102を含む。炭素を含まないケイ素前駆体は、ケイ素前駆体の種類の中でもとりわけ、たとえばケイ素および窒素前駆体、ケイ素および水素前駆体、またはケイ素、窒素、および水素含有前駆体とすることができる。これらの前駆体の特有の例は、シリルアミンの中でもとりわけ、H2N(SiH3)、HN(SiH3)2、およびN(SiH3)3などのシリルアミンを含むことができる。これらのシリルアミンは、キャリアガス、反応性ガス、または両方として作用できる追加のガスと混合することができる。追加のガスの例は、ガスの中でもとりわけ、H2、N2、NH3、He、およびArを含むことができる。炭素を含まないケイ素前駆体の例はまた、単独で、または他のケイ素含有ガス(たとえば、N(SiH3)3)、水素含有ガス(たとえば、H2)、および/もしくは窒素含有ガス(たとえば、N2、NH3)と混合された状態で、シラン(SiH4)を含むことができる。炭素を含まないケイ素前駆体はまた、単独で、または互いにもしくは前述の炭素を含まないケイ素前駆体と組み合わせた状態で、ジシラン、トリシラン、より高次のシラン、および塩化シランを含むことができる。
本発明の実施形態を実施できる堆積チャンバは、チャンバのタイプの中でもとりわけ、高密度プラズマ化学気相堆積(HDP−CVD)チャンバ、プラズマ化学気相堆積(PECVD)チャンバ、減圧化学気相堆積(SACVD)チャンバ、および熱化学気相堆積チャンバを含むことができる。本発明の実施形態を実施できるCVDシステムの特有の例は、カリフォルニア州サンタクララのApplied Materials,Inc.から入手可能なCENTURA ULTIMA(登録商標)のHDP−CVDチャンバ/システム、およびPRODUCER(登録商標)のPECVDチャンバ/システムを含む。
Claims (15)
- 炭素を含まないケイ素および窒素含有前駆体とラジカル前駆体とを混合することと、
ケイ素および窒素含有層を基板上に堆積させることと、
前記ケイ素および窒素含有層を前記酸化ケイ素層に変換することと
を含む、酸化ケイ素層の形成方法。 - 前記ラジカル前駆体がラジカル窒素前駆体である、請求項1に記載の方法。
- 前記ラジカル前駆体が水素を含むが、本質的に窒素を含まない、請求項1に記載の方法。
- 前記炭素を含まないケイ素および窒素含有前駆体がシリルアミンを含む、請求項1に記載の方法。
- 前記シリルアミンがN(SiH3)3を含む、請求項4に記載の方法。
- 前記ラジカル前駆体を、前記炭素を含まないケイ素および窒素含有前駆体と混合する前に、プラズマを使用して窒素および水素含有ガスから生成する、請求項1に記載の方法。
- 前記窒素および水素含有ガスが、ヒドラジン、アンモニア、N2、およびH2からなる群から選択されるガスを含む、請求項6に記載の方法。
- 前記ケイ素および窒素含有層を、酸素含有雰囲気に露出させることによって、前記酸化ケイ素層に変換する、請求項1に記載の方法。
- 前記酸素含有雰囲気が、酸素(O2)、オゾン(O3)、および蒸気(H2O)からなる群から選択される1つまたは複数のガスを含む、請求項8に記載の方法。
- 体積縮小率を低減させて酸化ケイ素層を形成する方法であって、
少なくとも1つの間隙を含む基板を提供することと、
前記基板上に炭素を含まないケイ素および窒素含有層を堆積させることと、
前記基板を酸素含有雰囲気中で加熱して、前記炭素を含まないケイ素および窒素含有層を前記酸化ケイ素層に変換することと
を含み、前記酸化ケイ素層が、前記間隙内に堆積させた前記炭素を含まないケイ素および窒素含有層の約85%以上の体積を保持する、方法。 - 前記炭素を含まないケイ素および窒素含有層を、ケイ素および窒素前駆体とラジカル前駆体との反応によって前記基板上に堆積させる、請求項10に記載の方法。
- 前記ケイ素および窒素前駆体がN(SiH3)3を含み、前記ラジカル前駆体を、プラズマで活性化されたNH3から形成する、請求項11に記載の方法。
- 前記炭素を含まないケイ素および窒素含有層がSi−N−H層を含む、請求項10に記載の方法。
- 前記基板間隙が約50nm以下の幅を有する、請求項10に記載の方法。
- 前記間隙内の前記酸化ケイ素層に実質上ボイドがない、請求項10に記載の方法。
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EP2462612A4 (en) | 2013-12-04 |
SG178240A1 (en) | 2012-03-29 |
WO2011017598A2 (en) | 2011-02-10 |
EP2462612A2 (en) | 2012-06-13 |
WO2011017598A3 (en) | 2011-05-26 |
US20110034039A1 (en) | 2011-02-10 |
KR20120043073A (ko) | 2012-05-03 |
TW201118194A (en) | 2011-06-01 |
US8741788B2 (en) | 2014-06-03 |
TWI535882B (zh) | 2016-06-01 |
CN102498551A (zh) | 2012-06-13 |
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