CN102498551A - 使用非碳可流动cvd处理形成氧化硅 - Google Patents

使用非碳可流动cvd处理形成氧化硅 Download PDF

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CN102498551A
CN102498551A CN2010800406068A CN201080040606A CN102498551A CN 102498551 A CN102498551 A CN 102498551A CN 2010800406068 A CN2010800406068 A CN 2010800406068A CN 201080040606 A CN201080040606 A CN 201080040606A CN 102498551 A CN102498551 A CN 102498551A
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nitrogen
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carbon
layer
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J·梁
N·K·英格尔
S·文卡特拉马
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Applied Materials Inc
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Abstract

揭示了一种形成氧化硅层的方法。该方法可包含下列步骤：混合一种无碳的含硅与氮前驱物及自由基前驱物，并沉积一种含硅与氮层于基材上。接着将含硅与氮层转变为氧化硅层。

Description

使用非碳可流动CVD处理形成氧化硅
有关申请的交叉参照
本申请主张于2009年8月6日提交，名称为「FORMATION OF SILICONOXIDE USING NON-CARBON FLOWABLE CVD PROCESSES」的美国临时专利申请第61/231,729号的权益，该申请以全文引用方式纳入本文中。
背景技术
半导体器件自问世数十年以来，半导体器件几何在尺寸上有引人注目的减小。现代半导体制造设备惯用来生产具45nm、32nm及28nm的特征尺寸的器件，并发展及实施新式设备以制作具有甚至更小几何的器件。减小特征尺寸造成器件上的结构特征具有减小的空间维度。器件上的间隙及沟槽宽度窄化，造成间隙深度对其宽度的纵横比变得够高，而让以介电材料填充间隙成为一项挑战。沉积介电材料易于在间隙被完全填充之前堵塞间隙的顶部，因而在间隙中间产生孔洞或接缝。
这些年来，发展了许多技术来避免介电材料堵塞间隙的顶部，或使已经形成的孔洞或接缝「愈合」。其中一种方式以高度可流动前驱物材料为起点，可于液相下将高度可流动的前驱物材料施加至旋涂基材表面(例如，SOG沉积技术)。这些可流动前驱物可流入并填充非常小的基材间隙而不会形成孔洞或弱接缝。然而，一旦这些高度可流动的材料被沉积，必须将它们硬化成为固体介电材料。
在许多例子中，硬化制程包含热处理，以自沉积的材料移除碳及羟基团，而留下诸如氧化硅的固体介电物质。可惜的是，碳及羟物质的离开常在硬化的介电物质中留下孔洞，因而降低了最终材料的品质。此外，硬化的介电物质也有体积收缩的倾向，这可在介电物质与环绕基材的介面处留下裂痕及空隙。于某些例子中，硬化的介电物质的体积可缩减40％或更多。
因此，有需要新的沉积制程及材料，以于结构化基材上形成介电材料，而不在基材间隙及沟槽中产生孔洞、接缝或这两者。也需要硬化具有较少孔洞及较低体积缩减的可流动介电材料的材料及方法。本发明解决了这些以及其它需求。
发明内容
描述了供可流动材料形成氧化硅层所用的方法、材料及系统，所形成的氧化硅层与藉由传统SOG技术形成的情况相比具有较少的孔洞及较低的收缩程度。本发明的方法可包括自无碳硅与氮前驱物及自由基前驱物沉积含硅与氮膜(例如，硅-氮-氢(Si-N-H)膜)的步骤。因为此硅与氮膜的形成不含碳，因此其可在较少孔洞形成及较低体积收缩率的情况下转变为硬化的氧化硅。
硅与氮膜至氧化硅的转变可藉由在含氧气氛中加热硅与氮膜来完成。除其它含氧气体外，于此气氛中的含氧气体可包括自由基原子氧(O)、分子氧(O2)、臭氧(O3)及/或水蒸气(H2O)。加热温度、时间以及压力足以将硅与氮膜氧化成为氧化硅膜。
本发明的具体实施例包含形成氧化硅层的方法。该方法包含下列步骤：混合无碳含硅与氮前驱物以及自由基前驱物，以及沉积含硅与氮层于基材上。接着透过后续的固化及/或退火步骤，将含硅与氮层转变为氧化硅层。
本发明的具体实施例可进一步包含形成具降低的体积收缩率的氧化硅层的方法。该方法可包含下列步骤：提供含有至少一个间隙的基材，以及沉积无碳含硅与氮层于基材上。可于含氧气氛中加热基材，以将无碳含硅与氮层转变为氧化硅层。氧化硅层可保留沉积于间隙中的无碳含硅与氮层约85％或更多的体积。
本发明的具体实施例可进一步包含形成氧化硅层的等离子体化学气相沉积方法。该方法可包含下列步骤：导入无碳含硅与氮前驱物以及自由基前驱物至含有基材的反应腔室。可自包含无碳含硅与氮前驱物以及自由基前驱物的混合物，形成等离子体。可自等离子体沉积含硅与氮层于基材上，并将含硅与氮层转变为氧化硅层。
额外具体实施例及特征结构在随后的部分描述中进行阐述，且本领域技术人员可藉由检验本专利说明书而明白本发明的部份，或藉由实施本发明而了解本发明的部份。所揭示的实施例的特征及优点可藉由本专利说明书中所描述的手段、组合及方法来实现及获得。
附图说明
可藉由参考本专利说明书的其它部分及附图来实现对所揭示的实施例的特性及优点的进一步了解，其中在多个附图之间使用相似的元件符号来指出类似的组件。在某些例子中，子标号与元件符号有关且伴随着连字号，以表示多个类似组件之一。当提及一元件符号而未载明现存的子标号时，其意指所有此等多个类似组件。
图1为流程图，其绘示根据本发明的具体实施例的用以制作氧化硅膜的选择步骤。
图2为另一流程图，其绘示根据本发明的具体实施例的用以在基材间隙中形成氧化硅膜的选择步骤。
图3为另一流程图，其绘示制作根据本发明的具体实施例的氧化硅膜的等离子体化学气相沉积方法的选择步骤。
图4显示根据本发明的具体实施例的基材处理系统。
图5A显示根据本发明的具体实施例的基材处理腔室。
图5B显示根据本发明的具体实施例的基材处理腔室的喷头。
具体实施方式
本文描述自一种可流动的含硅与氮层形成具降低的孔隙率(porosity)以及收缩率(shrinkage)的氧化硅层。可流动含硅与氮层可在基本上无碳的情况下自缺少含碳部分的前驱物形成。当基本上无碳的含硅与氮层转变为氧化硅层时，相较于初始的含硅与氮层，在层中缺少碳可造成较少的孔洞形成及较低的氧化层收缩率。在此将描述关于本发明的形成氧化硅层的方法与系统的额外细节。
示范性氧化硅形成过程
图1为流程图，其绘示根据本发明的具体实施例的制作氧化硅膜的方法100中的选择步骤。方法100包含提供无碳的硅前驱物至反应腔室(步骤102)。无碳硅前驱物可以是，举例而言，硅与氮前驱物、硅与氢前驱物或含硅氮与氢的前驱物，还有其它类型的硅前驱物。这些前驱物的特殊实例可包含硅烷胺类(silyl-amine)，如H2N(SiH3)、HN(SiH3)2及N(SiH3)3，还有其它硅烷胺。这些硅烷胺可与可作为载气、反应性气体或两者皆可的额外气体混合。额外气体的实例可包括H2、N2、NH3、He以及Ar，还有其它气体。无碳硅前驱物的实例也可包含单独存在或与其它含硅气体(例如，N(SiH3)3)、含氢气体(例如，H2)及/或含氮气体(例如，N2、NH3)混合的硅烷(SiH4)。无碳硅前驱物也可包括二硅烷、三硅烷、高阶硅烷以及氯化硅烷，其可单独存在或与另一个或前述无碳硅前驱物结合。
除了无碳以外，硅-前驱物还可以是无氧的。氧的缺乏可于自前驱物形成的硅与氮层中造成较低的硅醇(Si-OH)基团浓度。沉积膜中存在过多的硅醇部分，可于自沉积层移除羟基(-OH)部分的后沉积步骤期间造成增加的孔隙率以及收缩率。
也提供自由基-氮前驱物至反应腔室(步骤104)。自由基-氮前驱物是含氮-自由基物质，自由基-氮前驱物是自更稳定的氮前驱物于反应腔室外部形成。举例而言，相对稳定的氮前驱物如NH3及/或胼(N2H4)可于反应腔室外部的等离子体单元中被活化，以形成自由基-氮前驱物，接着被输送进入反应腔室。在不同的具体实施例中，稳定的氮前驱物也可为包含NH3与N2、NH3与H2、NH3与N2与H2以及N2与H2的混合物。在与N2以及H2的混合物中，也可用胼来取代NH3或与NH3组合。所产生的自由基-氮前驱物可为N、NH、NH2等等的一或多者，且也可伴随着于等离子体中形成的离子化物质。
一般来说，不包含氮的自由基前驱物也可容许形成含硅与氮层。若包含氮的话，自由基前驱物可为自由基-氮前驱物，这与前述的前驱物一起提供至远端等离子体区域。自由基前驱物于反应腔室中与沉积区域分隔的一个区段中产生，而前驱物于沉积区域混合并反应，以沉积硅与氮层于沉积基材(例如，半导体晶片)上。在自由基前驱物为自由基-氮前驱物的具体实施例中，稳定的氮前驱物流入远端等离子体区域并由等离子体激发。稳定的氮前驱物(以及自由基-氮前驱物)也可伴随着载气，如氢(H2)、氮(N2)、氩、氦等等。另外也于所揭露的具体实施例中发现，自输入气体形成的基本上由氮(N2)所组成(可有或没有额外惰性载气)的自由基-氮前驱物可产生有利的膜。于含硅前驱物包含氮的具体实施例中，自由基-氮前驱物也可由基本上由氢(H2)(及视情况而定的惰性载气)所组成的输入气体所形成的自由基前驱物所取代。
于反应腔室中，无碳硅前驱物与自由基-氮前驱物混合并反应以沉积含硅与氮膜于沉积基材上(步骤106)。于具体实施例中，沉积的含硅与氮膜可与某些配方组合共形地沉积。于其它具体实施例中，沉积的含硅与氮膜具有可流动特征，有别于传统氮化硅(Si3N4)膜沉积技术。形成的可流动本质容许膜流入窄间隙沟槽及基材的沉积表面上的其它结构。
可流动性(flowability)可能成因于将自由基-氮前驱物与无碳硅前驱物混合所造成的多种性质。这些性质可包括在沉积的膜中有显著的氢成分及/或短链聚硅氮烷(polysilazane)聚合物的存在。在膜形成期间及之后，这些短链成长并网路化以形成更密集的介电材料。举例而言，沉积的膜可具有硅氮烷类，Si-NH-Si主链(即，Si-N-H膜)。当硅前驱物及自由基-氮前驱物两者为无碳时，沉积的含硅与氮膜基本上也为无碳。当然，「无碳」不必然表示膜内没有痕量的碳。碳污染物可存在于前驱物材料中而构成它们进入沉积的硅与氮前驱物的方式。然而，这些碳杂质的量远小于可能在具有碳部分的硅前驱物(例如，TEOS、TMDSO等等)中发现的量。
随着含硅与氮层的沉积，可将沉积基材导入含氧气氛(步骤108)。当导入含氧气氛时，可维持沉积基材于反应腔室中，或可转移基材至不同的腔室。含氧气氛可包括一或多种含氧气体，如分子氧(O2)、臭氧(O3)、水蒸气(H2O)及氮氧化物(NO、NO2等等)，还有其它含氧气体。含氧气氛也可包括自由基氧以及羟基物质，如原子氧(O)、氢氧化物(OH)等等，它们可在远端产生并输送进入基材腔室。也可能存在含氧物质的离子。
含氧气氛提供氧，以将含硅与氮膜转变为氧化硅(SiO2)膜(步骤110)。如前所注解，含硅与氮膜中缺乏碳会显著造成较少的孔洞形成于最终氧化硅膜中。这也在转变为氧化硅期间造成较少的膜体积缩减(即，收缩率)。举例而言，当转变为氧化硅时，自含碳硅前驱物形成的硅-氮-碳层可能收缩40体积％或更多，而基本上无碳的硅与氮膜则可能收缩约15体积％或更少。
现请参见图2，显示另一流程图，绘示了根据本发明的具体实施例的用以在基材间隙中形成氧化硅膜的方法200的选择步骤。方法200可包含提供包含间隙的基材(步骤202)。基材可具有多个间隙，供形成于基材上的器件组件(例如，晶体管)的间隔与结构所用。间隙可具有高度及宽度，用于定义高度对宽度(即，H/W)的纵横比(aspect ratio，AR)，该纵横比显著大于1∶1(例如，5∶1或更大、6∶1或更大、7∶1或更大、8∶1或更大、9∶1或更大、10∶1或更大、11∶1或更大、12∶1或更大，等等)。于许多例子中，高AR是因小的间隙宽度之故，该间隙宽度的范围介于约90nm至约22nm或更小(例如，约90nm、65nm、45nm、32nm、22nm、16nm等等)。
可流动含硅与氮层可沉积于基材上(步骤204)。因为该层可流动，所以可填充具高纵横比的间隙，而不会在填充材料的中央周围产生空洞或弱接缝。举例而言，在完全填充间隙之前，沉积可流动材料较不会过早阻塞间隙的顶部而在间隙中间留下空洞。
可接着于含氧气氛中加热沉积的含硅与氮层(步骤206)。加热温度可在自室温至约1100℃的范围内(例如，于不同具体实施例中，在200℃、300℃、400℃、500℃、600℃、700℃、800℃、900℃或1000℃中的一温度以上)。含氧气氛可包括形式为原子氧(O)、分子氧(O2)、臭氧(O3)的本质上纯氧及其混合物。此气氛也可含有氧及水蒸气(H2O)的混合物。举例而言，可于含有臭氧(O3)及水蒸气(H2O)的气氛中加热沉积的硅与氮层。
具体实施例可包含具不同温度及气氛的多个加热阶段。举例而言，可于较低的第一温度下，在包含水蒸气(H2O)的气氛中进行第一加热阶段，而可在较高的第二温度下，在本质上缺乏水蒸气的干燥含氧气氛中进行第二加热阶段。也可在非含氧气氛(例如，干燥的N2、He、Ar等等)中进行第三加热阶段。
于含氧气氛中加热沉积的含硅与氮层在基材上形成包含基材间隙的氧化硅层(步骤208)。如上所注记，在热处理步骤之前，相较于以含碳前驱物所形成的具有显著量的碳存在于其中的类似层而言，此氧化硅层具有较少孔洞及较低的体积缩减。在许多例子中，体积缩减足够轻微(例如，约15体积％或更少)以避免后热处理步骤填充、愈合或者消除形成于间隙中的空间而造成氧化硅收缩。
图3为另一流程图，绘示制作根据本发明的具体实施例的氧化硅膜的等离子体化学气相沉积方法300的选择步骤。方法300可包含导入无碳硅前驱物及自由基-氮前驱物进入等离子体化学气相沉积腔室(步骤302)。自由基-氮前驱物可，例如，自稳定的含氮气体(例如，氨、分子氮(N2)、N2及H2的混合物等等)于等离子体CVD沉积腔室外部产生，并通过外接至CVD沉积腔室的远端等离子体系统。
可于等离子体CVD腔室中，自硅前驱物及自由基-氮前驱物形成等离子体(步骤304)。基材也可定位于腔室中，且可暴露至等离子体，该等离子体于基材上沉积含硅与氮层(步骤306)。所沉积的层可包含可流动的含Si-NH-Si主链的硅氮烷类材料，这允许该层在相较于氧化硅膜的传统PECVD沉积具有较少空洞或弱接缝的情况下，填充间隙及基材的其它结构元件。
接续含硅与氮膜的沉积，可将含氧气体导入等离子体CVD腔室，以将沉积的硅与氮层转变为氧化硅层。含氧气体可包括分子氧、臭氧以及水蒸气，还有其它气体。在某些例子中，等离子体可自包括含氧气体的混合物碰撞产生，而在其它例子中，没有等离子体自气体形成。进入CVD腔室的含氧气体可包括一或多种化合物，它们在进入腔室前被活化(例如，激化(radicalize)、离子化等等)。举例而言，含氧气体可包括自由基氧物质、自由基羟物质等等，它们藉由透过远端等离子体源暴露更稳定的前驱物化合物而活化。更稳定的前驱物可包括水蒸气及过氧化氢(H2O2)，用于产生羟(OH)自由基与离子；以及分子氧及/或臭氧，用于产生原子氧(O)自由基与离子。
示范性氧化硅沉积系统
可执行本发明的具体实施例的沉积腔室可包括高密度等离子体化学气相沉积(HDP-CVD)腔室、等离子体增强化学气相沉积(PECVD)腔室、次大气压化学气相沉积(SACVD)腔室以及热化学气相沉积腔室，还有其它类型的腔室。可执行本发明的具体实施例的CVD系统的特定实例包含可购自加州圣大克劳拉市(Santa Clara)的应用材料公司的CENTURA
Figure BPA00001516856400071
HDP-CVD腔室/系统，以及
Figure BPA00001516856400072
PECVD腔室/系统。
可与本发明的示范性方法一起使用的基材处理腔室实例可包含那些在Lubomirsky等人于2006年5月30日提交且名称为「PROCESS CHAMBER FORDIELECTRIC GAPFILL」的共同转让的美国临时专利申请第60/803,499号中所显示及描述的，该专利申请整体内容以为一切目的参照的方式并入本文中。额外的示范性系统可包含那些在美国专利第6,387,207及6,830,624号中所显示及描述的，该专利也以为一切目的参照的方式并入本文中。
沉积系统的具体实施例可并入较大的制造系统内，以生产集成电路芯片。图4显示根据本发明的具体实施例的一个此类沉积系统400、烘烤及固化腔室。于此图中，一对前开式晶片盒(front opening unified pod，FOUP)402供应基材，基材(例如，300mm直径的晶片)由机器人手臂404承接，并在置入晶片处理腔室408a-f之一以前先置入低压保持区406内。可用第二机器人手臂410以自保持区406向处理腔室408a-f来回移转基材晶片。
处理腔室408a-f可包括一或多个系统组件，用以在基材晶片上沉积、退火、固化及/或蚀刻可流动介电膜。于一种配置中，两对处理腔室(例如，408c-d及408e-f)可用以在基材上沉积可流动介电材料，且第三对处理腔室(例如，408a-b)可用来退火沉积的介电材料。于另一种配置中，相同的两对处理腔室(例如，408c-d及408e-f)可用以在基材上沉积并退火可流动介电膜，而第三对腔室(例如，408a-b)可用来进行沉积的膜的UV或电子束固化。于再一种配置中，全部三对腔室(例如，408a-f)可用以在基材上沉积并固化可流动介电膜。于又一种配置中，两对处理腔室(例如，408c-d及408e-f)可用来进行可流动介电膜的沉积及UV或电子束固化两者，而第三对处理腔室(例如，408a-b)可用以退火介电膜。所述处理中的任一或多者可在与不同具体实施例所显示的制造系统分离的(多个)腔室上进行。
此外，处理腔室408a-f中的一或多个可如湿式处理腔室般进行配置。这些处理腔室包含在含有湿气的气氛中加热可流动介电膜。因此，系统400的具体实施例可包含湿式处理腔室408a-b以及退火处理腔室408c-d，以在沉积的介电膜进行湿式及干式退火二者。
图5A为根据所揭露的具体实施例的基材处理腔室500。远端等离子体系统(RPS)510可处理气体，该气体接着透过气体入口组件511行进。气体入口组件511内可见到两个显著不同的气体供应通道。第一通道512承载通过远端等离子体系统(RPS)510的气体，而第二通道513则避开RPS 500。于所揭露的具体实施例中，第一通道512可供制程气体所用，且第二通道513可供处理气体所用。所示的盖体(或导电顶部区域)521以及开孔隔板553之间设有绝缘环524，容许AC电位施加至盖体521而不是开孔隔板553。制程气体行进通过第一通道512进入腔室等离子体区域520，且可在腔室等离子体区域520中由等离子体单独激发或与RPS 510联合激发。于本文中，腔室等离子体区域520及/或RPS 510的组合称为远端等离子体系统。开孔隔板(又称为喷头)553隔离腔室等离子体区域520以及喷头553下方的基材处理区域570。喷头553容许等离子体存在于腔室等离子体区域520中，以避免直接于基材处理区域570中激发气体，而仍可容许被激发的物质自腔室等离子体区域520行进至基材处理区域570。
喷头553位于腔室等离子体区域520及基材处理区域570之间，且容许腔室等离子体区域520内所生成的等离子体流出物(前驱物或其它气体的激发衍生物)通过贯穿板厚度的多个通孔556。喷头553也具有一或多个凹陷容积551，可填充以蒸气或气体形式的前驱物(如含硅前驱物)，并通过小孔555进入基材处理区域570，而非直接进入腔室等离子体区域520。于此揭露的具体实施例中，喷头553的厚度大于通孔556的最小直径550的长度。为了维持显著浓度的激发物质自腔室等离子体区域520渗透至基材处理区域570，可藉由形成部分通过喷头553的通孔556的较大直径部份来限缩通孔的最小直径550的长度526。于所揭露的具体实施例中，通孔556的最小直径550的长度的数量级，可相等于或小于通孔556的最小直径的数量级。
于所示的具体实施例中，喷头553可(经由通孔556)散布含有氧、氢及/或氮的制程气体，及/或此类制程气体由腔室等离子体区域520中的等离子体所激发的等离子体流出物。于具体实施例中，透过第一通道512导入RPS 510及/或腔室等离子体区域520的制程气体可含有氧(O2)、臭氧(O3)、N2O、NO、NO2、NH3、NxHy(包括N2H4、硅烷、二硅烷、TSA以及DSA)中的一或多者。制程气体也可包含载气，如氦、氩、氮(N2)等等。第二通道513也可散布制程气体及/或载气，及/或用以自生长的或沉积的膜移除非所欲成分的膜-固化气体。等离子体流出物可包括制程气体的离子化或中性衍生物，且在本文中也可代表有关于导入的制程气体的原子构成要素的自由基-氧前驱物及/或自由基-氮前驱物。
于具体实施例中，通孔556的数量可介于约60至约2000之间。通孔556可具有多种形状，但最容易制作成圆形。于所揭露的具体实施例中，通孔556的最小直径550可介于约0.5mm及约20mm之间，或介于约1mm及约6mm之间。还可自由选择通孔的截面形状，可被制作成圆锥状、圆柱状或两种形状的组合。在不同的具体实施例中，使用来将气体导入基材处理区域570的小孔555的数量可介于约100及约5000之间，或介于约500及约2000之间。小孔555的直径可介于约0.1mm及约2mm之间。图5B为根据所揭露的具体实施例的与处理腔室一起使用的喷头553的底部视图。喷头553相当于图5A中所绘示的喷头。所描绘的通孔556于喷头553底部具有较大的内径(inner-diameter，ID)，而在喷头553顶部具有较小ID。小孔555基本上平均散布于喷头表面上，甚至在通孔556周围，相较于本文所描述的其它具体实施例而言，这样可协助提供更平均的混合。
当透过喷头553中的通孔556抵达的等离子体流出物，与源自凹陷容积551并透过小孔555抵达的含硅前驱物结合时，示范性膜生成于基材处理区域570内的基座(未绘示)所支撑的基材上。虽然基材处理区域570也可能配备来维持供其它制程(如固化)所用的等离子体，但在示范性膜生长期间，没有等离子体存在。
可在喷头553上的腔室等离子体区域520中或在喷头553下的基材处理区域570中点燃等离子体。等离子体存在于腔室等离子体区域520中，以自含氮与氢气体流入物产生自由基-氮前驱物。将典型在射频(radio frequency，RF)范围内的AC电压施加于处理腔室的导电顶部份521以及喷头553之间，以于沉积期间点燃腔室等离子体区域520中的等离子体。RF功率供应器产生13.56MHz的高RF频率，但也可单独或结合13.56MHz频率而产生其它频率。
当基材处理区域570中的底部等离子体被打开以固化膜或清洁基材处理区域570边界的内表面时，可让顶部等离子体处于低功率或无功率状态。藉由在喷头553及基座或腔室底部之间施加AC电压来点燃基材处理区域570中的等离子体。当等离子体存在时，可将清洁气体导入基材处理区域570。
基座可具有供热交换流体流动的热交换通道，以控制基材的温度。此配置容许冷却或加热基材的温度，以维持相对低的温度(自0℃一直到120℃)。热交换流体可包含乙二醇及水。也可使用配置来做平行同心圆形式的两个完整匝数的埋入式单一回圈埋入加热器元件，以电阻加热基座的晶片支撑盘(较佳为铝、陶瓷或其组合)达到相对高温(自约120℃一直到约1100℃)。加热器元件的外侧部份可邻近支撑盘的边缘，而其内侧部份可围绕具有较小半径的同心圆的路线。连接加热器元件的线路通过基座的座脚。
基材处理系统由系统控制器所控制。于一示范性具体实施例中，系统控制器包括硬盘驱动器、软盘驱动器以及处理器。处理器含有单板电脑(single-boardcomputer，SBC)、模拟及数字输入/输出板、介面板以及步进马达控制器板。CVD系统的各种部件符合Versa Modular European(VME)标准，该标准定义板、卡片机架以及连接器尺寸及类型。VME标准亦定义具有16位元数据总线及24位地址总线的总线结构。
系统控制器控制CVD机器的全部活动。系统控制器执行系统控制软件，其为储存在电脑可读取媒体中的电脑程序。较佳地，该媒体为硬盘驱动器，但该媒体也可为其它类型的存储器。电脑程序包含多组指令，其支配特定制程的时点、气体的混合、腔室压力、腔室温度、RF功率等级、基座位置以及其它参数。也可使用储存于其它存储器装置(包含如软盘或另一适当的驱动器)的其它电脑程序来命令系统控制器。
可使用由系统控制器系统所执行的电脑程序产品来实施于基材上沉积膜堆迭的制程，或清洁腔室的制程。电脑程序码可以任何惯用的电脑可读取程序语言来撰写：例如，68000组合语言、C、C++、Pascal、Fortran或其它。以惯用的文字编辑器将合适的程序码输入单一文件或多个文件中，并储存或体现于电脑可使用媒体中，如电脑的存储器系统。若输入的程序码文字是以高阶语言撰写，则编译该程序码，并接着将所产生的编译器码连结预先编译的Microsoft
Figure BPA00001516856400111
常式库(library routine)的目标码(object code)。为了执行连结的、编译的目标码，系统使用者援引目标码，致使电脑系统载入存储器中的程序码。CPU接着读取并执行程序码以进行程序中所指示的任务。
透过平面面板触控监视器作为使用者与控制器之间的介面。于较佳的具体实施例中，使用了两个监视器，其中一个安装于清洁室壁供操作员所用，而另一个安装于壁后供服务技师所用。在一次只接受一个输入的例子中，这两个监视器可同步显示相同的信息。为了选择特定画面或功能，操作员触碰该触摸感应监视器的指定区块。被碰触的区块改变其标记颜色，或者显示一个新的选单或画面，以确认操作员与触摸感应监视器的间的沟通。其它装置，如键盘、滑鼠或其它指示或沟通装置可取代或附加至触摸感应监视器，以容许使用者与系统控制器沟通。
腔室等离子体区域或RPS中的一区域可称作远端等离子体区域。于具体实施例中，自由基-氮前驱物于远端等离子体区域中生成，并行进至基材处理区域内，而自由基-氮前驱物于基材处理区域激发无碳含硅前驱物。于具体实施例中，无碳含硅前驱物仅由自由基-氮前驱物激发。于具体实施例中，等离子体基本上可仅施加至远端等离子体区域，以确保自由基-氮前驱物对无碳含硅前驱物提供主导性的激发反应。
于利用腔室等离子体区域的具体实施例中，在自沉积区域所分隔的基材处理区域的一个区段中产生激发的等离子体流出物。沉积区域，于本文中亦称为基材处理区域，是等离子体流出物混合并与无碳含硅前驱物反应，以于沉积基材(例如，半导体晶片)上沉积该硅与氮层。激发的等离子体流出物也伴随着惰性气体(于示范性的例子中，惰性气体为氩)。于具体实施例中，无碳含硅前驱物在进入基材等离子体区域之前不通过等离子体。于本文中，于含硅与氮层成长期间，可将基材处理区域描述为「无等离子体(plasma-free)」。「无等离子体」并不必然意味着该区域完全没有等离子体。于等离子体区域生成的离子化物质以及自由电子确实透过隔板(喷头)中的孔洞(通孔)行进，但无碳含硅前驱物本质上不会被施加到等离子体区域的等离子体所激发。很难界定腔室等离子体区域中的等离子体的边界，且其可能透过喷头中的通孔侵入基材处理区域上方。在感应耦合等离子体的例子中，少量离子化可直接于基材处理区域中施行。进一步，低强度等离子体可生成于基材处理区域中，而不需消除形成膜的理想特性。于激发的等离子体流出物生成期间，具有较腔室等离子体区域(或远端等离子体区域，就此而论)低得多的强度离子密度的等离子体的所有成因，皆不偏离本文中所用的「无等离子体」的范畴。
本文使用的「基材(substrate)」可为在其上有或无层形成的支撑基材。支撑基材可为各种掺杂浓度及轮廓的绝缘体或半导体，且可为，例如在集成电路制造中所使用的类型的半导体基材。「氧化硅」的层用以作为含硅与氧材料的简写，且可与含硅与氧材料交换使用。就其本身而论，氧化硅可包括其它基础构成要素，如氮、氢、碳及类似者的含量。于某些具体实施例中，氧化硅基本上由硅与氧组成。术语「前驱物(precursor)」用来指示任何制程气体，其参与自表面上移除材料或沉积材料的反应。处于「激发态(excited state)」的气体所描述的气体中的至少某些气体分子处于震动激发态、游离态及/或离子化态。气体可为两种以上气体的组合。「自由基前驱物(radical precursor)」用以描述等离子体流出物(处于激发态而激发出等离子体的气体)，其参与自表面上移除材料或沉积材料的反应。「自由基-氮前驱物(radical-nitrogen precursor)」为含有氮的自由基前驱物。惯用语「惰性气体」指的是当纳入膜内时，不形成化学键结的任何气体。示范性惰性气体包含钝性气体，也可包含其它气体，只要当(典型地)其痕量陷入膜中时不会形成形成化学键结即可。
术语「沟槽(trench)」并非暗示蚀刻的几何形状具有高水平纵横比。自表面的上方观看，沟槽可呈现圆形、卵形、多边形、矩形或各种其他形状。术语「通孔(via)」用以指低纵横比沟槽，其可或可不以金属填充以形成垂直电连接。如本文所用，共形层(conformal layer)指的通常为位在一表面上且与该表面聚相同形状的均匀材料层，即，该层的表面以及被覆盖的表面通常为平行。本发明所属技术领域中具有通常技艺者可意识到沉积的材料有可能不会是100％共形的，因此，术语「通常(generally)」容许可接受的容差。
在已揭示若干具体实施例之后，本领域技术人员将认识到，在不偏离所揭示的具体实施例的精神的情况下可使用各种修改、替代构造及等效物。另外，未描述若干熟知的制程及元件以避免不必要地混淆本发明。因此，上文描述不应视为限制本发明的范畴。
在提供一范围的值的情况下，除非本文另有明确指定，应理解亦特定地揭示彼范围的上限与下限之间的每一中间值，精确度为至下限单位的十分位。将涵盖在陈述范围中的任一陈述值或中间值与在彼陈述范围中的任一其他陈述值或中间值之间的每一较小范围。此等较小范围的上限及下限可独立地包括于该范围中或排除于该范围的外，且在界限中任一者、没有任一界限或两界限皆包括于该等较小范围中的每一范围亦涵盖于本发明内，其受所陈述范围中任何特定排除的界限管辖。在所陈述范围包括该等限制中一者或两者的情况下，亦包括排除彼等包括的限制中一者或两者的范围。如本文及随附申请专利范围中所使用，除非本文另有明确指定，否则单数形式「一(a)」、「一(an)」及「该(the)」包括多个指示物。因此，例如，参考「一制程」包括多个该等制程，且参考「该前驱物」包括参考一或多个前驱物及本领域技术人员熟知的其等效物，等等。
此外，当在本专利说明书中及权利要求书中使用措词「包含(comprise)」、「包含(comprising)」、「包括(include)」、「包括(including)」及「包括(includes)」时，意欲指定陈述的特征、整数、组件或步骤的存在，但其不排除一或多个其他特征、整数、组件、步骤、动作或群组的存在或添加。

Claims (15)

1.一种形成氧化硅层的方法，包含下列步骤：
将无碳含硅与氮前驱物以及自由基前驱物混合；
沉积含硅与氮层于基材上；以及
将该含硅与氮层转变为该氧化硅层。
2.如权利要求1所述的方法，其中该自由基前驱物是自由基-氮前驱物。
3.如权利要求1所述的方法，其中该自由基前驱物包含氢但基本上无氮。
4.如权利要求1所述的方法，其中该无碳含硅与氮前驱物包含硅烷胺。
5.如权利要求4所述的方法，其中该硅烷胺包含N(SiH3)3。
6.如权利要求1所述的方法，其中该自由基前驱物是在与该无碳含硅与氮前驱物混合之前通过使用等离子体自含氮与氢气体所形成的。
7.如权利要求6所述的方法，其中该含氮与氢气体包含选自由肼、氨、N2以及H2所组成的群组中的气体。
8.如权利要求1所述的方法，其中该含硅与氮层是通过下列步骤转变为该氧化硅层的：暴露该含硅与氮层至含氧气氛。
9.如权利要求8所述的方法，其中该含氧气氛包含选自由氧气(O2)、臭氧(O3)以及水蒸汽(H2O)所组成的群组中的一或多种气体。
10.一种形成具有降低的体积收缩率的氧化硅层的方法，包含下列步骤：
提供基材，所述基材含有至少一个间隙；
沉积无碳含硅与氮层于该基材上；以及
于含氧气氛中加热该基材，以将该无碳含硅与氮层转变为该氧化硅层，其中该氧化硅层保留沉积于该间隙中的无碳含硅与氮层的约85％或更多的体积。
11.如权利要求10所述的方法，其中该无碳含硅与氮层是通过硅与氮前驱物及自由基前驱物的反应而被沉积于该基材上。
12.如权利要求11所述的方法，其中该硅与氮前驱物包含N(SiH3)3，且该自由基前驱物是形成自等离子体-活化的NH3。
13.如权利要求10所述的方法，其中该无碳含硅与氮层包含Si-N-H层。
14.如权利要求10所述的方法，其中该基材间隙具有约50nm或更少的宽度。
15.如权利要求10所述的方法，其中于该间隙中的氧化硅层是基本上无孔的。
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Application publication date: 20120613