JP2011069829A - プローブカード・アセンブリ及びキット、及びそれらを用いる方法 - Google Patents
プローブカード・アセンブリ及びキット、及びそれらを用いる方法 Download PDFInfo
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- JP2011069829A JP2011069829A JP2010235936A JP2010235936A JP2011069829A JP 2011069829 A JP2011069829 A JP 2011069829A JP 2010235936 A JP2010235936 A JP 2010235936A JP 2010235936 A JP2010235936 A JP 2010235936A JP 2011069829 A JP2011069829 A JP 2011069829A
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- probe
- probe card
- interconnect
- elements
- tip
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/02—Arrangements of circuit components or wiring on supporting structure
- H05K7/10—Plug-in assemblages of components, e.g. IC sockets
- H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
- H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
- H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- B23K20/004—Wire welding
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- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
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- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/51—Fixed connections for rigid printed circuits or like structures
- H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
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- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
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- H05K2201/03—Conductive materials
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
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- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
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Abstract
【解決手段】プローブカード・アセンブリ500が、プローブカード502と、間隔変換器506であり、接触構造(プローブ要素)524を有する間隔変換器と、間隔変換器とプローブカードの間に配設される介在体504とを含む。間隔変換器と介在体とを「積み重ね」,間隔変換器の配向を調整して、どのぐらいの調整をすべきかを決定するための適切な機構532、536、538、546が開示される。半導体ウェーハ508上の多数のダイ・サイトに、開示の技法を用いて容易にプローブが当てられ、プローブ要素は、ウェーハ全体のプローブ当てを最適化するように配列可能である。
【選択図】図5
Description
図2Aは、端子214が設けられる電子コンポーネント212に実装された、相互接続要素210の1つの実施例200を示す。この例の場合、軟質(例えば、金)ワイヤコア216が、一端において端子214にボンディングされ(取り付けられ)、端子から延伸してスプリング形状を有するように構成され(図1Bに示す形状に匹敵)て、自由端216bを有するように切断される。このようにワイヤのボンディング、成形、及び切断は、ワイヤボンディング装置を用いて達成される。コアの端部216aにおける接着剤は、端子214の露出表面の比較的小さい部分しか覆わない。
図2Aは、総括的に、本発明の他の重要な特徴、すなわち復元性のある相互接続要素が、電子コンポーネント上の端子に確実に締結できることを示す。相互接続要素の取付端210aは、相互接続要素の自由端210bに加えられる圧縮力(矢印「F」)の結果として、大幅な機械的応力を受ける。
・半導体パッケージを有する必要がなく、シリコンダイに直接実装される相互接続要素と、
・電子コンポーネントを試験するために、基板(以下で更に詳細に説明する)からプローブとして延伸する相互接続要素と、
・介挿物(以下で更に詳細に論じる)の相互接続要素である。
図2Bは、多層を有する複合相互接続要素220を示す。相互接続要素220の最内部(内部の細長い導電要素)222は、上記したように、未被覆コアか、又は既に保護膜生成されているコアのいずれかである。最内部222の先端222bは、適切なマスキング材料(不図示)でマスクされる。誘電体層224が、電気泳動工程等により最内部222にわたって施される。導電材料の外層226が、誘電体層224にわたって施される。
図2Cは、複数(図示では多くのうち6個)の相互接続要素251…256が、プローブカード挿入(慣用的な仕方でプローブカードに実装される副アセンブリ)等の電子コンポーネント260の表面上に実装される実施例250を示す。プローブカード挿入の端子及び導電トレースは、図示の明瞭化のために、この図面から省略されている。相互接続要素251…256の取付端は、0.05−0.10インチといった第1のピッチ(間隔)で始まる。相互接続要素251…256は、それらの自由端(先端)が0.005−0.010インチといった第2の微細なピッチとなるように、成形及び/又は配向される。あるピッチから別のピッチへと相互接続をなす相互接続アセンブリは、通常、「間隔変換器」と呼ばれる。
電子コンポーネントの端子への直接的な相互接続要素の実装を以上に説明した。総括的に言うと、本発明の相互接続要素は、犠牲基板を含む任意の適切な基板の任意の適切な表面に製造、又は実装可能である。
上記の技法は、複合相互接続要素を製造するための斬新な技法を一般的に説明するものであり、その物理的特性は、所望の度合いの復元性を呈示するように容易に合わせられる。
図3Aは、本発明の相互接続要素を用いた、介在体の1つの実施例300を示す。一般に、PCB型式の基板等の絶縁基板302には、複数(図示では多くのうち2つ)の導電性スルーホール(例えば、メッキされたバイア)306、308その他が設けられ、その各々は、絶縁基板302の上部(上側)表面302a、及び下部(下側)表面302bにおいて露出した導電部分を有する。
図3Bは、本発明の相互接続要素を用いた、介在体の他の実施例330を示す。この実施例の場合、複数(図示では多くのうち1つ)の相互接続要素332が、犠牲基板(不図示)上に所望のパターン(例えば、アレイ)で製造される。支持基板334には、同様に複数の穴336が、対応するパターンで設けられる。支持基板334は、相互接続要素332が、穴336を介して延伸するように、相互接続要素332にわたって配置される。相互接続要素は、穴336を充填する適切な材料338(エラストマー等)によって、支持基板内で緩く保持されて、支持基板の上部及び下部表面の両方から延伸する。次に、犠牲基板は除去される。明らかではあるが、支持基板334(266に匹敵)は、この介在体アセンブリを製造する工程において、犠牲基板(254)に実装される複数の相互接続要素(264に匹敵)上に単純に「落とす」ことができる。
図3Cは、本発明の相互接続要素を用いた、介在体の他の実施例360を示す。この実施例360は、以前に説明した実施例330と類似であるが、相互接続構造362(332に匹敵)が、支持基板364(334に匹敵)の穴366(336に匹敵)内で、支持基板のスルーホール366上のメッキ部368に、相互接続構造362の中間部を半田付けすることにより支持される点を除く。やはり、支持基板364(266に匹敵)は、この介在体アセンブリを製造する工程において、犠牲基板(254)に実装される複数の相互接続要素(264に匹敵)上に単純に「落とす」ことができる。
上記の説明は主に、軟質ワイヤコアと硬質保護膜が代表例である、成形及び保護膜生成されたワイヤコアから、複合相互接続要素を形成する方法に概ね的を絞った。本発明は又、金属シート、好適には軟質金属シートであり、成形され、好適には硬質材料で保護膜生成される平坦な伸長要素(タブ)を形成するためにパターン化される(型打ち、又はエッチング等により)金属シートから形成される、相互接続要素の形成法にも適用可能である。この内容は、上述の米国特許出願第08/526,246号に詳述されている。
直ぐ上で説明した図3A−3Cは、本発明に応用できる(適切)である、介在体、及びそれらを製作するための技法を記載している。主に、本発明の複合相互接続要素を説明したが、明確に理解されたいのは、リン青銅及びベリリウム銅から本質的に弾性をもって製作されるモノリシック材料から製作されたばね構造を含めて、任意の復元性のある相互接続要素(スプリング)が使用可能である、ということである。
図5は、プローブカード・アセンブリ500の1つの実施例を示し、これは、その主要機能構成要素として、プローブカード502と、介在体504と、間隔変換器506とを含み、半導体ウェーハ508に対して一時的な相互接続をなすのに適している。この分解組立の断面図において、例示の明瞭化のために、幾つかの構成要素の幾つかの要素を誇張して示している。しかし、各種の構成要素の垂直方向(図示のように)の位置合わせは、図面の点線で適切に示されている。留意されたいのは、相互接続要素(514、516、524、これらは以下で更に詳細に説明する)が部分的ではなく完全に示されている点である。
図7は、図5のプローブカード・アセンブリ500等のプローブカード・アセンブリを位置合わせする技法700を示す。この目的のために、この図において、図5のプローブカード・アセンブリ500の要素の幾つかが同じ符号(5xx)を持つ。図7は、主要構成要素が互いに接触した、部分的組立図である。
上記で説明した図2D−2Fは、犠牲基板(254)上に先端構造(258)を製造して、続く、電子コンポーネントの端子への実装のために、先端構造(258)上に複合相互接続要素264を製造するための技法を開示している。かかる技法は、間隔変換器(518)の上部表面に、製造済みの先端構造を有する複合相互接続要素を実装することに関連して、確かに使用可能である。
Claims (58)
- 試験済み半導体素子を製造するための方法であって、プローブカード・アセンブリを提供するステップと、このプローブカード・アセンブリが、複数の電気接点を有するプローブカードと、複数の細長く弾性的なプローブ要素と、このプローブ要素の一つと前記電気接点の一つを電気的に接続する従順な相互接続構造とを含み、複数の半導体素子を提供するステップと、各半導体素子が電気的な接触パッドを含み、前記プローブ要素を前記半導体素子の前記電気的な接触パッドと接触させるステップと、前記半導体素子を試験するステップとを含む方法。
- 前記従順な相互接続構造が前記プローブカードと前記プローブ基板の間に配置されている請求項1記載の方法。
- 前記複数の半導体素子がウェーハ形状にある請求項1記載の方法。
- 試験済み半導体素子を製造するための前記方法が、さらに前記ウェーハをダイシングして前記半導体素子を単一化するステップを含む請求項1記載の方法。
- 前記従順な相互接続構造が、前記相互接続構造の両面から延伸する複数の細長い相互接続要素を含む請求項2記載の方法。
- 前記複数の細長い接続要素のそれぞれが、前記細長い相互接続要素が前記従順な相互接続構造の開口を通過するように配置され、前記細長い相互接続要素の両端が前記相互接続構造の両端から隔置されている請求項5記載の方法。
- 前記複数の細長い相互接続要素が前記プローブカード及び前記プローブ構造に対して力を及ぼす請求項5記載の方法。
- 前記力がバネ力である請求項7記載の方法。
- 前記細長い相互接続要素が弾性的である請求項5記載の方法。
- 前記細長い相互接続要素のそれぞれが、第1の材料からなるコアと、第2の材料からなる被覆を含み、該第2の材料が前記第1の材料よりも弾性的である請求項9記載の方法。
- 前記細長い相互接続要素のそれぞれが、第1の材料からなる前駆体と、第2の材料からなる被覆とを含む請求項5記載の方法。
- 前記従順な相互接続要素が、前記相互接続構造の一方の面から延伸する複数の第1の相互接続要素と、前記相互接続構造の反対の面から延伸する複数の第2の相互接続要素とを含む請求項1記載の方法。
- 前記複数の第1の相互接続要素が、前記複数の第2の相互接続要素とは異なる機械的性質を有する請求項12記載の方法。
- 前記複数の第2の相互接続要素が剛直である請求項13記載の方法。
- 前記従順な相互接続構造が取り外し可能である請求項5記載の方法。
- 前記プローブカードが複数の相互接続要素構造を含み、該複数の相互接続要素構造の一つが、前記複数の電気接点の一つから延伸し、前記複数の相互接続要素構造が前記従順な相互接続構造と接触する請求項2記載の方法。
- 前記プローブ基板が複数の相互接続要素構造を含み、前記複数の相互接続要素構造が前記相互接続構造と接触する請求項2記載の方法。
- さらに、前記プローブカードに対して前記プローブカードの傾きを調節することにより、前記プローブ要素の先端を整列させるステップを含む請求項1記載の方法。
- 前記整列させるステップが、前記プローブカードに対して前記プローブ要素の傾きに変化を与えるように配置されている移動可能要素を動かすステップを含む請求項18記載の方法。
- 前記移動可能要素がねじ山をつけられている請求項19記載の方法。
- 前記移動可能要素がねじを含む請求項19記載の方法。
- 前記ねじが作動ねじを含む請求項21記載の方法。
- 前記移動可能要素を第1の方向に動かすことにより、少なくとも前記プローブ基板の一部分が前記プローブカードの方に動く請求項19記載の方法。
- 前記移動可能要素を第2の方向に動かすことにより、少なくとも前記プローブ基板の一部分が前記プローブカードから離れるように動く請求項23記載の方法。
- さらに複数の前記移動可能要素を動かすステップを含む請求項18記載の方法。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の位置を調節するように配置されているサーボ機構を作動するステップを含む請求項19記載の方法。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の位置を調節するように配置されている圧電アクチュエータを作動するステップを含む請求項19記載の方法。
- 前記調節するステップが前記先端を調節板とともに整列するステップを含む請求項19記載の方法。
- 前記プローブ基板が間隔変換器を含む請求項1記載の方法。
- 前記プローブ要素のそれぞれが、第1の材料と第2の材料を含み、該第2の材料が該第1の材料よりも弾性がある請求項1の方法。
- 試験済み半導体素子を製造するための方法であって、複数の電気接点を含むプローブカードを提供するステップと、前記プローブカードに移動可能に固定され、複数の細長い弾性的なプローブ要素を含むプローブ基板を提供するステップと、該細長い弾性的なプローブ要素の一つが前記電気接点の一つと電気的に連絡し、前記プローブカードに対して前記プローブ基板の傾きを調節することによって前記プローブ要素の先端を整列するステップと、半導体素子を提供するステップと、前記先端を前記半導体素子と接触させるステップと、前記半導体素子を試験するステップとを含む方法。
- 前記整列するステップが、前記プローブカードに対して前記プローブ基板の傾きに影響を与えるように配置されている移動可能要素を動かすステップを含む請求項31記載の方法。
- 前記移動可能要素がねじ山をつけられている請求項32記載の方法。
- 前記移動可能要素がねじを含む請求項32記載の方法。
- 前記ねじが作動ねじを含む請求項34記載の方法。
- 前記移動可能要素を第1の方向に動かすことにより、少なくとも前記プローブ基板の一部分が前記プローブカードの方に動く請求項32記載の方法。
- 前記移動可能要素を第2の方向に動かすことにより、少なくとも前記プローブ基板の一部分が前記プローブカードから離れるように動く請求項36記載の方法。
- さらに複数の前記移動可能要素を動かすステップを含む請求項31記載の方法。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の位置を調節するように配置されているサーボ機構を作動するステップを含む請求項31記載の方法。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の位置を調節するように配置されている圧電アクチュエータを作動するステップを含む請求項31記載の方法。
- 前記プローブ基板が間隔変換器を含む請求項31記載の方法。
- 前記プローブ要素が、第1の材料からなるコアと、第2の材料からなる被覆を含み、該第2の材料が前記第1の材料よりも弾性的である請求項31記載の方法。
- 前記整列させるステップが前記先端を調節板とともに整列するステップを含む請求項31記載の方法。
- それぞれが複数の電気的な接触パッドを含む複数の半導体素子を有するウェーハを設け、複数の電気接点と、複数の細長く弾性的なプローブ要素を有するプローブ基板と、該プローブ要素の対応する1つと前記電気接点の1つを電気的に接続する従順な相互接続要素を有するプローブカードを含むプローブカード・アセンブリを設け、前記ウェーハと前記プローブカード・アセンブリを、前記半導体素子の前記電気的な接触パッドの1つが前記プローブ要素の1つと電気的に接触するように接続し、前記半導体素子を試験するプロセスによって製造される試験済み半導体素子。
- 前記プロセスが、前記プローブ要素の先端を対応する前記電気的な接触パッドと整列するステップをさらに含む請求項44記載の試験済み半導体素子。
- 前記プローブ要素の先端を整列するステップが、前記プローブカードに対して前記プローブ基板の傾きを調節するステップを含む請求項45記載の試験済み半導体素子。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の傾きに変化を与えるように配置されている移動可能要素を動かすステップを含む請求項46記載の試験済み半導体素子。
- 前記整列するステップが、さらに前記先端を調節板とともに整列するステップを含む請求項45記載の試験済み半導体素子。
- 前記プロセスが、前記ウェーハをダイシングして前記半導体素子を単一化するステップを含む請求項44記載の試験済み半導体素子。
- 前記プローブ基板が間隔変換器を含む請求項44記載の試験済み半導体素子。
- 複数の電気接点をからなるプローブカードを設け、前記プローブカードに対して移動可能なように固定されているとともに複数の細長く弾性的なプローブ要素を有するプローブ基板を設け、該細長く弾性的なプローブ要素の1つが前記電気接点の1つと電気的に連絡し、前記プローブカードに対して前記プローブ基板の傾きを調節することによって前記プローブ要素の先端を整列し、この調節するステップが、前記プローブカードに対して前記プローブ基板の傾きに変化を与えるように配置されている移動可能要素を動かすステップを含み、半導体素子を提供し、前記先端を前記半導体素子と接触させ、前記半導体素子を試験するプロセスによって製造される試験済み半導体素子。
- 前記移動可能な要素がねじ山をつけられている請求項51記載の試験済み半導体素子。
- 前記移動可能要素がねじを含む請求項51記載の試験済み半導体素子。
- 前記ねじが作動ねじを含む請求項53記載の試験済み半導体素子。
- 前記移動可能要素を第1の方向に動かすことにより、少なくとも前記プローブ基板の一部分が前記プローブカードの方に動く請求項51記載の試験済み半導体素子。
- 前記移動可能要素を第2の方向に動かすことにより、少なくとも前記プローブ基板の一部分が前記プローブカードから離れるように動く請求項55記載の試験済み半導体素子。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の位置を調節するように配置されているサーボ機構を作動するステップを含む請求項51記載の試験済み半導体素子。
- 前記調節するステップが、前記プローブカードに対して前記プローブ基板の位置を調節するように配置されている圧電アクチュエータを作動するステップを含む請求項51記載の試験済み半導体素子。
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US08/340,144 US5917707A (en) | 1993-11-16 | 1994-11-15 | Flexible contact structure with an electrically conductive shell |
PCT/US1994/013373 WO1995014314A1 (en) | 1993-11-16 | 1994-11-16 | Contact structure for interconnections, interposer, semiconductor assembly and method |
US08/452,255 US6336269B1 (en) | 1993-11-16 | 1995-05-26 | Method of fabricating an interconnection element |
US08/457,479 US6049976A (en) | 1993-11-16 | 1995-06-01 | Method of mounting free-standing resilient electrical contact structures to electronic components |
US52624695A | 1995-09-21 | 1995-09-21 | |
US08/533,584 US5772451A (en) | 1993-11-16 | 1995-10-18 | Sockets for electronic components and methods of connecting to electronic components |
US08/554,902 US5974662A (en) | 1993-11-16 | 1995-11-09 | Method of planarizing tips of probe elements of a probe card assembly |
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JP2007216518A Division JP2008034861A (ja) | 1994-11-15 | 2007-08-22 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
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JP51695896A Pending JP2002509639A (ja) | 1994-11-15 | 1995-11-13 | 超小型電子素子の相互接続要素 |
JP51630896A Expired - Fee Related JP3386077B2 (ja) | 1994-11-15 | 1995-11-13 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP08518844A Expired - Fee Related JP3114999B2 (ja) | 1994-11-15 | 1995-11-13 | 柔軟性ワイヤからの電気的接触構造 |
JP8516307A Expired - Fee Related JP2892505B2 (ja) | 1994-11-15 | 1995-11-13 | 回路基板への電子コンポーネントの実装 |
JP23742498A Expired - Fee Related JP3157134B2 (ja) | 1994-11-15 | 1998-08-24 | 回路基板への電子コンポーネントの実装 |
JP22986699A Expired - Fee Related JP4160693B2 (ja) | 1994-11-15 | 1999-08-16 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2000202978A Withdrawn JP2001077250A (ja) | 1994-11-15 | 2000-07-04 | 柔軟性ワイヤからの電気的接触構造 |
JP2002285164A Expired - Fee Related JP4163922B2 (ja) | 1994-11-15 | 2002-09-30 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2002285165A Expired - Fee Related JP4160809B2 (ja) | 1994-11-15 | 2002-09-30 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2005278874A Expired - Fee Related JP4540577B2 (ja) | 1994-11-15 | 2005-09-26 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2007000149A Expired - Fee Related JP4588721B2 (ja) | 1994-11-15 | 2007-01-04 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2007189655A Pending JP2007329491A (ja) | 1994-11-15 | 2007-07-20 | 柔軟性ワイヤからの電気的接触構造 |
JP2007216518A Pending JP2008034861A (ja) | 1994-11-15 | 2007-08-22 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2010235936A Pending JP2011069829A (ja) | 1994-11-15 | 2010-10-20 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
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JP51695896A Pending JP2002509639A (ja) | 1994-11-15 | 1995-11-13 | 超小型電子素子の相互接続要素 |
JP51630896A Expired - Fee Related JP3386077B2 (ja) | 1994-11-15 | 1995-11-13 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP08518844A Expired - Fee Related JP3114999B2 (ja) | 1994-11-15 | 1995-11-13 | 柔軟性ワイヤからの電気的接触構造 |
JP8516307A Expired - Fee Related JP2892505B2 (ja) | 1994-11-15 | 1995-11-13 | 回路基板への電子コンポーネントの実装 |
JP23742498A Expired - Fee Related JP3157134B2 (ja) | 1994-11-15 | 1998-08-24 | 回路基板への電子コンポーネントの実装 |
JP22986699A Expired - Fee Related JP4160693B2 (ja) | 1994-11-15 | 1999-08-16 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2000202978A Withdrawn JP2001077250A (ja) | 1994-11-15 | 2000-07-04 | 柔軟性ワイヤからの電気的接触構造 |
JP2002285164A Expired - Fee Related JP4163922B2 (ja) | 1994-11-15 | 2002-09-30 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2002285165A Expired - Fee Related JP4160809B2 (ja) | 1994-11-15 | 2002-09-30 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2005278874A Expired - Fee Related JP4540577B2 (ja) | 1994-11-15 | 2005-09-26 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2007000149A Expired - Fee Related JP4588721B2 (ja) | 1994-11-15 | 2007-01-04 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
JP2007189655A Pending JP2007329491A (ja) | 1994-11-15 | 2007-07-20 | 柔軟性ワイヤからの電気的接触構造 |
JP2007216518A Pending JP2008034861A (ja) | 1994-11-15 | 2007-08-22 | プローブカード・アセンブリ及びキット、及びそれらを用いる方法 |
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EP (4) | EP1408337A3 (ja) |
JP (14) | JP2002509639A (ja) |
KR (7) | KR100408948B1 (ja) |
CN (2) | CN1251319C (ja) |
AU (4) | AU4283996A (ja) |
DE (4) | DE69535629T2 (ja) |
WO (4) | WO1996017378A1 (ja) |
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KR20200068279A (ko) * | 2018-12-05 | 2020-06-15 | 경북대학교 산학협력단 | 국부 항복 전류를 이용한 선택적 열처리 방법 및 국부 항복 전류를 이용한 선택적 열처리용 프로브카드 |
KR102168622B1 (ko) * | 2018-12-05 | 2020-10-21 | 경북대학교 산학협력단 | 국부 항복 전류를 이용한 선택적 열처리 방법 및 국부 항복 전류를 이용한 선택적 열처리용 프로브카드 |
WO2023157900A1 (ja) * | 2022-02-18 | 2023-08-24 | ヌヴォトンテクノロジージャパン株式会社 | プローブユニット、検査装置、検査システム、検査方法、及び半導体レーザ装置の製造方法 |
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